Single side polishing machine
Technical field
The present invention relates to polishing machine, particularly a kind of single side polishing machine.
Background technology
During semiconductor wafer (as silicon chip, GaAs, germanium wafer, sapphire, indium phosphide etc.) polishing, the flatness of monolithic polishing machine polishing disk controls to be the key technology having influence on wafer polishing precision.Current single side polishing machine, due to polishing disk and grinding upper disc, operationally different radii linear velocity is different, only pressurizes by single plane, causes inside and outside variable thickness to cause, affects wafer quality.
Summary of the invention
The invention provides a kind of single side polishing machine, the problem that during to overcome single side polishing machine polished wafer in prior art, variable thickness causes.
For solving the problems of the technologies described above, the invention provides a kind of single side polishing machine, comprise: casing, be arranged on dumping in described casing, grind platen, cylinder and electric rotating machine, above dumping described in described grinding platen is arranged on, described cylinder and electric rotating machine control described grinding platen knee-action and rotation respectively, and the inside of described grinding platen is provided with center cylinder.
As preferably, described in dump and be provided with multiple rotary cylinder around.
As preferably, described grinding platen also comprises: porcelain dish, top board, take over a business and outer shroud, wherein, described in take over a business to be arranged at the top of described outer shroud and affixed with described cylinder, center cylinder be arranged at described outer shroud center and and top plate contact, described porcelain dish is fixed on bottom outer shroud.
As preferably, described in take over a business in be provided with the air inlet corresponding with described center cylinder.
As preferably, described grinding platen is provided with two groups.
As preferably, described casing is also provided with control panel.
Compared with prior art, the present invention has the following advantages: the mode that the present invention adopts center cylinder to pressurize makes the bottom of grinding platen produce a certain amount of deflection, thus improves the uniformity of wafer thickness.
Accompanying drawing explanation
Fig. 1 is the front view of single side polishing machine in the embodiment of the invention;
Fig. 2 is the structural representation of the grinding platen of single side polishing machine in the embodiment of the invention;
Fig. 3 is the rearview of single side polishing machine in the embodiment of the invention.
In figure: 10-casing, 20-dumps, 30-grinds platen, 301-center cylinder, 302-take over a business, 303-top board, 304-porcelain dish, 305-outer shroud, 306-air inlet, 40-cylinder, 50-rotary cylinder, 60-control panel.
Detailed description of the invention
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.It should be noted that, accompanying drawing of the present invention all adopts the form of simplification and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 1 ~ 3, single side polishing machine of the present invention, comprise: casing 10, be arranged in described casing 10 dump 20, grinding platen 30, cylinder 40 and electric rotating machine, dump above 20 described in described grinding platen 30 is arranged on, described cylinder 40 and electric rotating machine control described grinding platen 30 knee-action and rotation respectively, and the inside of described grinding platen 30 is provided with center cylinder 301.Particularly, described electric rotating machine rotates for controlling described grinding platen 30, described cylinder 40 controls described grinding platen 30 and rises or decline, and center cylinder 301 works when described grinding platen 30 pushes down wafer, make to produce deflection bottom grinding platen 30, and then make the center of wafer consistent with the grinding thickness of surrounding.Therefore, the mode that the present invention adopts center cylinder 301 to pressurize makes the bottom of grinding platen 30 produce a certain amount of deflection, thus improves the uniformity of wafer thickness.
Continue referring to Fig. 1 ~ 3, as preferably, described in dump around 20 and be provided with multiple rotary cylinder 50, for 20 rotations of dumping described in controlling, further, described grinding platen 30 is provided with two groups, and polishing while of can carrying out multiple wafer, enhances productivity.
Please emphasis with reference to Fig. 2, described grinding platen 30 also comprises: porcelain dish 304, top board 303, take over a business 302 and outer shroud 305, wherein, describedly take over a business 302 to be arranged at the top of described outer shroud 305 and affixed with described cylinder 40, center cylinder 301 is arranged at described outer shroud 305 center and contacts with top board 303, and described porcelain dish 304 is fixed on bottom outer shroud 305.Further, take over a business described in 302 and be provided with the air inlet 306 corresponding with described center cylinder 301.As shown in phantom in Figure 2, when grinding platen 30 and working, cylinder 40 drives the action downwards of grinding platen 30, center cylinder 301 action, by the action of top board 303 pairs of disks 304, disk 304 is made to produce certain deflection (as shown in dashed line in figure 2), guarantee to dump 20 and grinding platen 30 when rotating, the polished amount of center wafer and surrounding, thus the uniformity improving wafer thickness.
Please refer to Fig. 3, described casing 10 is also provided with control panel 60, for regulating the various parameters in described single side polishing machine, and described single side polishing machine action can be monitored by control panel 60.
In sum, single side polishing machine of the present invention, comprise: casing 10, be arranged in described casing 10 dump 20, grinding platen 30, cylinder 40 and electric rotating machine, dump above 20 described in described grinding platen 30 is arranged on, described cylinder 40 and electric rotating machine control described grinding platen 30 knee-action and rotation respectively, and the inside of described grinding platen 30 is provided with center cylinder 301.The mode that the present invention adopts center cylinder 301 to pressurize makes the bottom of grinding platen 30 produce a certain amount of deflection, thus improves the uniformity of wafer thickness.
Obviously, those skilled in the art can carry out various change and modification to invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.