CN103532414B - Synchronous self-driving power frequency commutation bridge circuit of grid-connected inverter - Google Patents
Synchronous self-driving power frequency commutation bridge circuit of grid-connected inverter Download PDFInfo
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- CN103532414B CN103532414B CN201310445653.6A CN201310445653A CN103532414B CN 103532414 B CN103532414 B CN 103532414B CN 201310445653 A CN201310445653 A CN 201310445653A CN 103532414 B CN103532414 B CN 103532414B
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Abstract
The invention relates to a synchronous self-driving power frequency commutation bridge circuit of a grid-connected inverter. According to the synchronous self-driving power frequency commutation bridge circuit, four power switching circuits are in bridge type connection; the four power switching circuits are respectively driven by four driving circuits; the synchronous self-driving of the synchronous self-driving power frequency commutation bridge circuit is realized under the effect of an electric supply power grid; the amplitude, the frequency and the phase of the synchronous self-driving power frequency commutation bridge circuit are the same as those of an electric supply; and the synchronous self-driving power frequency commutation bridge circuit is rapid in establishment of the synchronous self-driving, high in stability, simple to realize and low in cost.
Description
Technical field
The present invention relates to photovoltaic combining inverter technical field is and in particular to a kind of synchronous self-powered of combining inverter is started building
Frequency commutation bridge circuit, is particularly suited for photovoltaic combining inverter.
Background technology
With a large amount of consumption of the non-renewable energy resources such as crude oil, the price of crude oil constantly rises, simultaneously crude oil using right
The pollution problem of environment is increasingly serious.The whole world is all both economically and environmentally beneficial in searching now, and reproducible new forms of energy.Wherein too
Sun can have immeasurable application market as the new forms of energy of a kind of economy, environmental protection.At present, the main Land use systems of solar energy
It is to convert solar energy into electrical energy by photovoltaic cell to use for load.Due to photovoltaic cell output is unidirectional current, and actual
The load of application is most of to be AC load, therefore the application of solar energy encounters bottleneck.
In order to solve the above problems, it has been proposed that photovoltaic DC-to-AC converter, the unidirectional current that photovoltaic cell is exported is converted to difference
Voltage, the alternating current of different frequency.At present, being most widely used of civil power, therefore in order that solar energy is widely used, people
By photovoltaic DC-to-AC converter by the DC conversion that photovoltaic cell exports be with civil power with pressure with frequency alternating current.
At present, photovoltaic DC-to-AC converter includes off-grid type photovoltaic DC-to-AC converter and parallel net type photovoltaic DC-to-AC converter, wherein, grid-connected inverse
Become the type of drive that device mainly adopts Sinusoidal Pulse Width Modulation (SPWM), generally required using IC core using SPWM type of drive
Piece and corresponding software condition, this type of drive high cost, realize difficulty greatly, realize Real-time Feedback also by hardware and drive,
By the type of drive that feedback modulation realized by hardware, the modulation of hardware is required higher, realize difficulty greatly, the modulation time is long.
Content of the invention
The purpose of the present invention is to overcome shortcomings and deficiencies of the prior art, provides a kind of low cost, realization simply grid-connected
The synchronous self-driven power frequency commutation bridge circuit of inverter.
The purpose of the present invention is achieved through the following technical solutions：A kind of synchronous self-driven power frequency commutation of combining inverter
Bridge circuit, including：Boost rectifying circuit, the first power switch circuit, the second power switch circuit, the 3rd power switch circuit,
4th power switch circuit, the first drive circuit, the second drive circuit, the 3rd drive circuit and the 4th drive circuit, described
One power switch circuit, the second power switch circuit, the 3rd power switch circuit and the 4th power switch circuit connect into bridge electricity
Road,
In bridge circuit, the first power switch circuit and the 3rd power switch circuit junction point connect the live wire of utility grid, and second
Power switch circuit is connected the zero line of utility grid with the 4th power switch circuit,
The junction point of the first power switch circuit and the second power switch circuit and the 3rd power switch circuit and the 4th work(
The junction point of rate on-off circuit connects boost rectifying circuit two outfan respectively；
Described first drive circuit is connected with the live wire of the first power switch circuit and utility grid respectively, described second drive
Galvanic electricity road is connected with the zero line of the second power switch circuit and utility grid respectively, described 3rd drive circuit respectively with the 3rd work(
The zero line of rate on-off circuit and utility grid connects, and described 4th drive circuit is electric with the 4th power switch circuit and civil power respectively
The live wire of net connects.
Further, described first power switch circuit is the first metal-oxide-semiconductor Q1, and described first drive circuit includes：First
Diode D4, the second diode ZD1, the first electric capacity C2, the second electric capacity C3, first resistor R3, second resistance R2 and the one or three pole
Pipe Q5,
The positive pole of described first diode D4 connects the live wire of utility grid, and negative pole connects the base stage of the first audion Q5, and first
Electric capacity C2 is in parallel with the first diode D4, and the second electric capacity C3 mono- terminates the live wire of utility grid, and the other end passes through second resistance R2
It is connected with the grid of the first metal-oxide-semiconductor Q1, connect one end of first resistor R3, another termination first audion of first resistor R3 simultaneously
The base stage of Q5, the emitter stage of the first audion Q5 connects the live wire of utility grid, and colelctor electrode connects the grid of the first metal-oxide-semiconductor Q1, and second
The positive pole of diode ZD1 connects the live wire of utility grid, and negative pole connects the grid of the first metal-oxide-semiconductor Q1.
Further, the second power switch circuit is the second metal-oxide-semiconductor Q2, and described second drive circuit includes：Five or two pole
Pipe D6, the 6th diode ZD2, the 3rd electric capacity C4, the 4th electric capacity C5,3rd resistor R5, the 4th resistance R4 and the second audion Q6,
The positive pole of described 5th diode D6 connects the zero line of utility grid, and negative pole connects the base stage of the second audion Q6, and the 3rd
Electric capacity C4 is in parallel with the 5th diode D6, and the 4th electric capacity C5 mono- terminates the zero line of utility grid, and the other end passes through the 4th resistance R4
It is connected with the grid of the second metal-oxide-semiconductor Q2, connect one end of 3rd resistor R5, another termination second audion of 3rd resistor R5 simultaneously
The base stage of Q6, the emitter stage of the second audion Q6 connects the zero line of utility grid, and colelctor electrode connects the grid of the second metal-oxide-semiconductor Q2, and the 6th
The positive pole of diode ZD2 connects the zero line of utility grid, and negative pole connects the grid of the second metal-oxide-semiconductor Q2.
Further, the base stage of described first audion Q5 is also connected with the positive pole of the 3rd diode D2, the 3rd diode
The negative pole of D2 is connected with the positive pole of the 4th diode D3, the negative pole of the 4th diode D3 connect the second electric capacity C3 and first resistor R3 it
Between node；
The base stage of the second audion Q6 is also connected with the positive pole of the 7th diode D5, the negative pole and the 8th of the 7th diode D5
The positive pole of diode D7 connects, and the negative pole of the 8th diode D7 connects the node between the 4th electric capacity C5 and 3rd resistor R5；
The negative pole of the 7th diode D5 is connected with the negative pole of the 3rd diode also by the 5th resistance R1.
Further, described first audion Q5 and the second audion Q6 is NPN triode.
Further, described 3rd power switch circuit is the 3rd metal-oxide-semiconductor Q3, and described 3rd drive circuit includes：6th
Resistance R6, the 7th resistance R7, the 8th resistance R8, the 9th diode D8 and the tenth diode ZD3, one end of described 6th resistance R6
Connect the zero line of utility grid, the grid of the 3rd metal-oxide-semiconductor Q3 in another termination the 3rd power switch circuit, the 9th diode D8 is just
Pole connects the grid of the 3rd metal-oxide-semiconductor Q3, and negative pole connects the zero line of utility grid, a termination the 3rd of the 8th resistance R8 by resistance R7
The grid of metal-oxide-semiconductor Q3, the zero line of another termination boost rectifying circuit outfan, the negative pole of the tenth diode ZD3 connects the 3rd MOS
The grid of pipe Q3, positive pole connects the zero line of boost rectifying circuit outfan.
Further, described 4th power switch circuit is the 4th metal-oxide-semiconductor Q4, and described 4th drive circuit includes：9th
Resistance R9, the tenth resistance R10, the 11st resistance R11, the 11st diode D9 and the 12nd diode ZD4, described 9th resistance
The zero line of the one termination utility grid of R9, the grid of the 4th metal-oxide-semiconductor Q4 in another termination the 4th power switch circuit, the 11st
The positive pole of pole pipe D9 connects the grid of the 4th metal-oxide-semiconductor Q4, and negative pole meets the live wire of utility grid, the 11st resistance R11 by resistance R10
One termination the 4th metal-oxide-semiconductor Q4 grid, the zero line of another termination boost rectifying circuit outfan, the 12nd diode ZD4's
Negative pole connects the grid of the 4th metal-oxide-semiconductor Q4, and positive pole connects the zero line of boost rectifying circuit outfan.
Further, described first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor Q4 are N ditch
Road depletion type MOS tube.
Further, to connect boost rectifying circuit respectively defeated for the drain electrode of the drain electrode of described first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2
Go out the live wire at end；
The source electrode of the source electrode of the 3rd metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor Q4 connects the zero line of boost rectifying circuit outfan respectively；
The drain electrode of the source electrode of the first metal-oxide-semiconductor Q1 and the 3rd metal-oxide-semiconductor Q3 meets the live wire of utility grid, the second metal-oxide-semiconductor Q2 respectively
Source electrode and the drain electrode of the 4th metal-oxide-semiconductor Q4 connect the zero line of utility grid；
The grid of the first metal-oxide-semiconductor Q1 connects the first drive circuit, and the grid of the second metal-oxide-semiconductor Q2 connects the second drive circuit, and the 3rd
The grid of metal-oxide-semiconductor Q3 connects the 3rd drive circuit, and the grid of the 4th metal-oxide-semiconductor Q4 connects the 4th drive circuit.
Further, described boost rectifying circuit includes：Transformator, full-bridge rectification unit, filter unit, described transformator
Input termination photovoltaic cell, the input of output termination full-bridge rectification unit, the output termination filter unit of full-bridge rectification unit
Input.
The present invention includes advantages below and beneficial effect compared to existing technology：
(1) the synchronous self-driven power frequency commutation bridge circuit of the combining inverter of the present invention is by four power switch circuit bridge-types
Connect, and drive aforementioned four power switch circuit respectively by four drive circuits, in the presence of utility grid, synchronization is certainly
Drive power frequency commutation bridge circuit to achieve synchronous self-driven, and its amplitude, frequency and phase place and civil power completely the same, synchronous self-powered
Dynamic foundation is fast, and stability is high, realizes simple.
(2) synchronous self-driven power frequency commutation bridge circuit structure is simple, using common common electronic component, cost of implementation
Low.
Brief description
Fig. 1 is a kind of circuit theory diagrams of the synchronous self-driven power frequency commutation bridge circuit of combining inverter in embodiment.
Specific embodiment
With reference to embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention do not limit
In this.
Embodiment
As shown in figure 1, a kind of synchronous self-driven power frequency commutation bridge circuit of combining inverter, including：Boost rectifying circuit,
First power switch circuit, the second power switch circuit, the 3rd power switch circuit, the 4th power switch circuit, the first driving
Circuit, the second drive circuit, the 3rd drive circuit and the 4th drive circuit, described first power switch circuit, the second power are opened
Close circuit, the 3rd power switch circuit and the 4th power switch circuit and connect into bridge circuit,
In bridge circuit, the first power switch circuit is connected the live wire of utility grid, the second power with the 3rd power switch circuit
On-off circuit and the 4th power switch circuit junction point connect the zero line of utility grid,
The junction point of the first power switch circuit and the second power switch circuit and the 3rd power switch circuit and the 4th work(
The junction point of rate on-off circuit connects boost rectifying circuit two outfan respectively；
Described first drive circuit is connected with the live wire of the first power switch circuit and utility grid respectively, described second drive
Galvanic electricity road is connected with the zero line of the second power switch circuit and utility grid respectively, described 3rd drive circuit respectively with the 3rd work(
The zero line of rate on-off circuit and utility grid connects, and described 4th drive circuit is electric with the 4th power switch circuit and civil power respectively
The live wire of net connects.
Described boost rectifying circuit includes：Transformator, full-bridge rectification unit, filter unit, described transformer inputs connect
Photovoltaic cell, the input of output termination full-bridge rectification unit, the output of full-bridge rectification unit terminates the input of filter unit.
Described first power switch circuit is the first metal-oxide-semiconductor Q1, and the second power switch circuit is the second metal-oxide-semiconductor Q2, the 3rd
Power switch circuit is the 3rd metal-oxide-semiconductor Q3, and the 4th power switch circuit is the 4th metal-oxide-semiconductor Q4,
Further, described first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q3, the 3rd metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor Q4 are N ditch
Road depletion type MOS tube.
The source electrode of the source electrode of described first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 connects the fire of boost rectifying circuit outfan respectively
Line；
The drain electrode of the 3rd metal-oxide-semiconductor Q3 connects the zero line of boost rectifying circuit outfan respectively with the drain electrode of the 4th metal-oxide-semiconductor Q4；
The drain electrode of the first metal-oxide-semiconductor Q1 connects the live wire ACL of utility grid, the second metal-oxide-semiconductor respectively with the source electrode of the 3rd metal-oxide-semiconductor Q3
The drain electrode of Q2 meets the zero line ACN of utility grid with the source electrode of the 4th metal-oxide-semiconductor Q4；
The grid of the first metal-oxide-semiconductor Q1 connects the first drive circuit, and the grid of the second metal-oxide-semiconductor Q2 connects the second drive circuit, and the 3rd
The grid of metal-oxide-semiconductor Q3 connects the 3rd drive circuit, and the grid of the 4th metal-oxide-semiconductor Q4 connects the 4th drive circuit.Described first drive circuit
Including：First diode D4, the second diode ZD1, the first electric capacity C2, the second electric capacity C3, first resistor R3, second resistance R2 and
First audion Q5,
The positive pole of described first diode D4 meets the live wire ACL of utility grid, and negative pole connects the base stage of the first audion Q5, the
One electric capacity C2 is in parallel with the first diode D4, and the second electric capacity C3 mono- terminates the live wire ACL of utility grid, and the other end passes through the second electricity
Resistance R2 is connected with the grid of the first metal-oxide-semiconductor Q1, connects one end of first resistor R3, another termination the one or three of first resistor R3 simultaneously
The base stage of pole pipe Q5, the emitter stage of the first audion Q5 meets the live wire ACL of utility grid, and colelctor electrode connects the grid of the first metal-oxide-semiconductor Q1
Pole, the positive pole of the second diode ZD1 meets the live wire ACL of utility grid, and negative pole connects the grid of the first metal-oxide-semiconductor Q1.
Described second drive circuit includes：5th diode D6, the 6th diode ZD2, the 3rd electric capacity C4, the 4th electric capacity
C5,3rd resistor R5, the 4th resistance R4 and the second audion Q6,
The positive pole of described 5th diode D6 meets the zero line ACN of utility grid, and negative pole connects the base stage of the second audion Q6, the
Three electric capacity C4 are in parallel with the 5th diode D6, and the 4th electric capacity C5 mono- terminates the zero line ACN of utility grid, and the other end passes through the 4th electricity
Resistance R4 is connected with the grid of the second metal-oxide-semiconductor Q2, connects one end of 3rd resistor R5, another termination the two or three of 3rd resistor R5 simultaneously
The base stage of pole pipe Q6, the emitter stage of the second audion Q6 meets the zero line ACN of utility grid, and colelctor electrode connects the grid of the second metal-oxide-semiconductor Q2
Pole, the positive pole of the 6th diode ZD2 meets the zero line ACN of utility grid, and negative pole connects the grid of the second metal-oxide-semiconductor Q2.
The base stage of described first audion Q5 is also connected with the positive pole of the 3rd diode D2, the negative pole of the 3rd diode D2 with
The positive pole of the 4th diode D3 connects, and the negative pole of the 4th diode D3 connects the node between the second electric capacity C3 and first resistor R3；
The base stage of the second audion Q6 is also connected with the positive pole of the 7th diode D5, the negative pole and the 8th of the 7th diode D5
The positive pole of diode D7 connects, and the negative pole of the 8th diode D7 connects the node between the 4th electric capacity C5 and 3rd resistor R5；
The negative pole of the 7th diode D5 is connected with the negative pole of the 3rd diode also by the 5th resistance R1.
Described first audion Q5 and the second audion Q6 is NPN triode.
Described 3rd drive circuit includes：6th resistance R6, the 7th resistance R7, the 8th resistance R8, the 9th diode D8 and
Tenth diode ZD3,
Described 6th resistance R6 mono- terminates the zero line ACN of utility grid, the other end connect respectively the 9th diode D8 positive pole,
The grid of one end, the negative pole of the tenth diode ZD3 and the 3rd metal-oxide-semiconductor Q3 of the 8th resistance R8, another termination of the 8th resistance R8
The zero line of boost rectifying circuit outfan, the positive pole of the 12nd diode ZD4 connects the zero line of boost rectifying circuit outfan, the
The negative pole of nine diode D8 meets the zero line ACN of utility grid by the 7th resistance R7.
Described 4th drive circuit includes：9th resistance R9, the tenth resistance R10, the 11st resistance R11, the 11st pole
Pipe D9 and the 12nd diode ZD4,
Described 9th resistance R9 mono- terminates the live wire ACL of utility grid, and the other end is just meeting the 11st diode D9 respectively
Pole, the grid of one end, the negative pole of the 12nd diode ZD4 and the 4th metal-oxide-semiconductor Q4 of the 11st resistance R11, the 11st resistance R11
The zero line of another termination boost rectifying circuit outfan, the positive pole of the 12nd diode ZD4 connects boost rectifying circuit outfan
Zero line, the negative pole of the 11st diode D9 meets the live wire ACL of utility grid by the tenth resistance R10.
When the live wire ACL voltage of synchronous self-driven power frequency commutation bridge circuit powered on moment utility grid is higher than zero line ACN,
In the upper half cycle of period 1, the live wire ACL of utility grid passes through the first diode D4, the 3rd diode D2, the 5th resistance
R1, the 8th diode D7 charge to the 4th electric capacity C5, by the first diode D4, the 3rd diode D2, the 5th resistance R1, the 8th
Diode D7,3rd resistor R5 charge to the 3rd electric capacity C4.In the lower half cycle of period 1, the live wire ACL electricity of utility grid
Force down in zero line ACN, the 4th electric capacity C5 passes through the 4th resistance R4, the 6th diode ZD2 electric discharge, provides to the second metal-oxide-semiconductor Q2 and drives
Galvanic electricity pressure, meanwhile, zero line ACN provides driving voltage to after the 6th resistance R6, the 8th resistance R8 partial pressure the 3rd metal-oxide-semiconductor Q3,
Now the second metal-oxide-semiconductor Q2 and the 3rd metal-oxide-semiconductor Q3 is both turned on.Additionally, zero line ACN pass through the 5th diode D6, the 7th diode D5,
5th resistance R1, the 4th diode D3 charge to the second electric capacity C3, by the 5th diode D6, the 7th diode D5, the 5th electricity
Resistance R1, the 4th diode D3, first resistor R3 charge to the first electric capacity C2.
In the upper half cycle of second round, the live wire ACL voltage of utility grid is higher than zero line ACN, the knot of the second metal-oxide-semiconductor Q2
Voltage on electric capacity is quickly released by the discharge circuit of the 3rd electric capacity C4, the second audion Q6 composition, the knot electricity of the 3rd metal-oxide-semiconductor Q3
Voltage in appearance is then quickly released by the 9th diode D8, the 7th resistance R7, and the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3 rapidly enter
Cut-off state.Meanwhile, the second electric capacity C3 passes through second resistance R2, the second diode ZD1 electric discharge, provides to the first metal-oxide-semiconductor Q1 and drives
Galvanic electricity pressure, live wire ACL provides driving voltage to after the 9th resistance R9, the 11st resistance R11 partial pressure the 4th metal-oxide-semiconductor Q4, this
When the first metal-oxide-semiconductor Q1 and the 4th metal-oxide-semiconductor Q4 be both turned on.Additionally, live wire ACL is again by the first diode D4, the 3rd diode
D2, the 5th resistance R1, the 8th diode D7 charge to the 4th electric capacity C5, by the first diode D4, the 3rd diode D2, the 5th
Resistance R1, the 8th diode D7,3rd resistor R5 charge to the 3rd electric capacity C4.In the lower half cycle of second round, utility grid
Live wire ACL voltage be less than zero line ACN, the voltage in the junction capacity of the first metal-oxide-semiconductor Q1 is then by the first electric capacity C2, the first audion
Q5 quickly releases, and the voltage in the junction capacity of the 4th metal-oxide-semiconductor Q4 is then quickly released by the 11st diode D9, the tenth resistance R10,
First metal-oxide-semiconductor Q1, the 4th metal-oxide-semiconductor Q4 rapidly enter cut-off state.Additionally, the 4th electric capacity C5 pass through the 4th resistance R4, the six or two
Pole pipe ZD2 is discharged, and provides driving voltage to the second metal-oxide-semiconductor Q2, meanwhile, zero line ACN divides through the 6th resistance R6, the 8th resistance R8
There is provided driving voltage to after pressure the 3rd metal-oxide-semiconductor Q3, now the second metal-oxide-semiconductor Q2 and the 3rd metal-oxide-semiconductor Q3 is both turned on, and zero line ACN leads to
Cross the 5th diode D6, the 7th diode D5, the 5th resistance R1, the 4th diode D3 charge to the second electric capacity C3, by the 5th
Diode D6, the 7th diode D5, the 5th resistance R1, the 4th diode D3, first resistor R3 charge to the first electric capacity C2.
When the live wire ACL voltage of synchronous self-driven power frequency commutation bridge circuit powered on moment utility grid is less than zero line ACN,
Zero line ACN is charged to the second electric capacity C3 by the 5th diode D6, the 7th diode D5, the 5th resistance R1, the 4th diode D3,
By the 5th diode D6, the 7th diode D5, the 5th resistance R1, the 4th diode D3, first resistor R3 to the first electric capacity C2
Charge.Its synchronization set up process with when the live wire ACL electricity of synchronous self-driven power frequency commutation bridge circuit powered on moment utility grid
Pressure is contrary higher than the situation of zero line ACN.
Synchronous self-driven power frequency commutation bridge circuit from access civil power start only to need half period can achieve with amplitude of the commercial power,
Frequency, phase place are completely the same.
Above-described embodiment is the present invention preferably embodiment, but embodiments of the present invention are not subject to above-described embodiment
Limit, other any spirit without departing from the present invention and the change made under principle, modification, replacement, combine, simplify,
All should be equivalent substitute mode, be included within protection scope of the present invention.
Claims (9)
1. the synchronous self-driven power frequency commutation bridge circuit of a kind of combining inverter, including：Boost rectifying circuit, the first power switch
Circuit, the second power switch circuit, the 3rd power switch circuit, the 4th power switch circuit, the first drive circuit, the second driving
Circuit, the 3rd drive circuit and the 4th drive circuit, described first power switch circuit, the second power switch circuit, the 3rd work(
Rate on-off circuit and the 4th power switch circuit connect into bridge circuit, and in bridge circuit, the first power switch circuit and the 3rd power are opened
Close the live wire that circuit connects utility grid, the second power switch circuit is connected the zero of utility grid with the 4th power switch circuit
Line, the junction point of the first power switch circuit and the second power switch circuit and the 3rd power switch circuit and the 4th power switch
The junction point of circuit connects boost rectifying circuit two outfan respectively；Described first drive circuit and the first power switch circuit and city
The live wire of electrical network connects, and described second drive circuit is connected with the zero line of the second power switch circuit and utility grid, described
3rd drive circuit is connected with the zero line of the 3rd power switch circuit and utility grid respectively, described 4th drive circuit respectively with
The live wire of the 4th power switch circuit and utility grid connects it is characterised in that described first power switch circuit is a MOS
Pipe Q1, described first drive circuit includes：First diode D4, the second diode ZD1, the first electric capacity C2, the second electric capacity C3,
One resistance R3, second resistance R2 and the first audion Q5, the positive pole of described first diode D4 connects the live wire of utility grid, negative pole
Connect the base stage of the first audion Q5, the first electric capacity C2 is in parallel with the first diode D4, the second electric capacity C3 mono- terminates utility grid
Live wire, the other end is connected with the grid of the first metal-oxide-semiconductor Q1 by second resistance R2, connects one end of first resistor R3 simultaneously, and first
The base stage of another termination the first audion Q5 of resistance R3, the emitter stage of the first audion Q5 connects the live wire of utility grid, current collection
Pole connects the grid of the first metal-oxide-semiconductor Q1, and the positive pole of the second diode ZD1 connects the live wire of utility grid, and negative pole connects the first metal-oxide-semiconductor Q1's
Grid.
2. the synchronous self-driven power frequency commutation bridge circuit of combining inverter according to claim 1 is it is characterised in that described
Second power switch circuit is the second metal-oxide-semiconductor Q2, and described second drive circuit includes：5th diode D6, the 6th diode
ZD2, the 3rd electric capacity C4, the 4th electric capacity C5,3rd resistor R5, the 4th resistance R4 and the second audion Q6, described 5th diode
The positive pole of D6 connects the zero line of utility grid, and negative pole connects the base stage of the second audion Q6, and the 3rd electric capacity C4 and the 5th diode D6 is simultaneously
Connection, the 4th electric capacity C5 mono- terminates the zero line of utility grid, and the other end is by the grid of the 4th resistance R4 and the second metal-oxide-semiconductor Q2 even
Connect, meet one end of 3rd resistor R5, the base stage of another termination the second audion Q6 of 3rd resistor R5, the second audion Q6 simultaneously
Emitter stage connect the zero line of utility grid, colelctor electrode connects the grid of the second metal-oxide-semiconductor Q2, and the positive pole of the 6th diode ZD2 connects civil power
The zero line of electrical network, negative pole connects the grid of the second metal-oxide-semiconductor Q2.
3. combining inverter according to claim 2 synchronous self-driven power frequency commutation bridge circuit it is characterised in that：Described
The base stage of the first audion Q5 is also connected with the positive pole of the 3rd diode D2, the negative pole of the 3rd diode D2 and the 4th diode D3
Positive pole connect, the negative pole of the 4th diode D3 connects the node between the second electric capacity C3 and first resistor R3；Second audion Q6
Base stage be also connected with the positive pole of the 7th diode D5, the negative pole of the 7th diode D5 is connected with the positive pole of the 8th diode D7,
The negative pole of the 8th diode D7 connects the node between the 4th electric capacity C5 and 3rd resistor R5；The negative pole of the 7th diode D5 also by
5th resistance R1 is connected with the negative pole of the 3rd diode.
4. combining inverter according to claim 3 synchronous self-driven power frequency commutation bridge circuit it is characterised in that：Described
First audion Q5 and the second audion Q6 is NPN triode.
5. the synchronous self-driven power frequency commutation bridge circuit of combining inverter according to claim 4 is it is characterised in that described
3rd power switch circuit is the 3rd metal-oxide-semiconductor Q3, and described 3rd drive circuit includes：6th resistance R6, the 7th resistance R7, the 8th
Resistance R8, the 9th diode D8 and the tenth diode ZD3, described 6th resistance R6 mono- terminates the zero line of utility grid, the other end
Meet positive pole, one end of the 8th resistance R8, the negative pole of the tenth diode ZD3 and the 3rd metal-oxide-semiconductor Q3 of the 9th diode D8 respectively
Grid, the zero line of another termination boost rectifying circuit outfan of the 8th resistance R8, the positive pole of the 12nd diode ZD4 connects liter
The zero line of voltage rectifier outfan, the negative pole of the 9th diode D8 connects the zero line of utility grid by the 7th resistance R7.
6. the synchronous self-driven power frequency commutation bridge circuit of combining inverter according to claim 5 is it is characterised in that described
4th power switch circuit includes for the 4th drive circuit described in the 4th metal-oxide-semiconductor Q4：9th resistance R9, the tenth resistance R10, the tenth
One resistance R11, the 11st diode D9 and the 12nd diode ZD4, described 9th resistance R9 mono- terminates the live wire of utility grid,
The other end connect respectively the positive pole of the 11st diode D9, one end of the 11st resistance R11, the negative pole of the 12nd diode ZD4 and
The grid of the 4th metal-oxide-semiconductor Q4, the zero line of the 11st resistance R11 another termination boost rectifying circuit outfan, the 12nd diode
The positive pole of ZD4 connects the zero line of boost rectifying circuit outfan, and the negative pole of the 11st diode D9 meets city by the tenth resistance R10
The live wire of electrical network.
7. combining inverter according to claim 6 synchronous self-driven power frequency commutation bridge circuit it is characterised in that：Described
First metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor Q4 are N-channel depletion type MOS tube.
8. combining inverter according to claim 7 synchronous self-driven power frequency commutation bridge circuit it is characterised in that：Described
The drain electrode of the first metal-oxide-semiconductor Q1 connects the live wire of boost rectifying circuit outfan respectively with the drain electrode of the second metal-oxide-semiconductor Q2；3rd metal-oxide-semiconductor
The source electrode of the source electrode of Q3 and the 4th metal-oxide-semiconductor Q4 connects the zero line of boost rectifying circuit outfan respectively；The source electrode of the first metal-oxide-semiconductor Q1
Drain electrode with the 3rd metal-oxide-semiconductor Q3 connects the live wire of utility grid, the source electrode of the second metal-oxide-semiconductor Q2 and the drain electrode of the 4th metal-oxide-semiconductor Q4 respectively
Connect the zero line of utility grid；The grid of the first metal-oxide-semiconductor Q1 connects the first drive circuit, and the grid of the second metal-oxide-semiconductor Q2 connects the second driving
Circuit, the grid of the 3rd metal-oxide-semiconductor Q3 connects the 3rd drive circuit, and the grid of the 4th metal-oxide-semiconductor Q4 connects the 4th drive circuit.
9. the synchronous self-driven power frequency commutation bridge circuit of the combining inverter according to any one of claim 1 to 8, its feature
It is, described boost rectifying circuit includes：Transformator, full-bridge rectification unit, filter unit, described transformer inputs connect photovoltaic
Battery, the input of output termination full-bridge rectification unit, the output of full-bridge rectification unit terminates the input of filter unit.
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| CN102664551A (en) * | 2012-05-11 | 2012-09-12 | 德州三和电器有限公司 | Self-driven power frequency synchronous phase conversion full-bridge circuit |
| CN203537257U (en) * | 2013-09-26 | 2014-04-09 | 惠州三华工业有限公司 | Synchronous self-driven power-frequency commutation bridge circuit for grid-connected inverter |
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| KR100774145B1 (en) * | 2007-04-18 | 2007-11-07 | 주식회사 큐리온 | Power converter having a self driven synchronous rectifier |
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| CN102664551A (en) * | 2012-05-11 | 2012-09-12 | 德州三和电器有限公司 | Self-driven power frequency synchronous phase conversion full-bridge circuit |
| CN203537257U (en) * | 2013-09-26 | 2014-04-09 | 惠州三华工业有限公司 | Synchronous self-driven power-frequency commutation bridge circuit for grid-connected inverter |
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