CN102664551A - Self-driven power frequency synchronous phase conversion full-bridge circuit - Google Patents
Self-driven power frequency synchronous phase conversion full-bridge circuit Download PDFInfo
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Abstract
The invention relates to a self-driven power frequency synchronous phase conversion full-bridge circuit, which is simple, is low in cost, works reliably and is suitable for a grid-connected inverter. The self-driven power frequency synchronous phase conversion full-bridge circuit comprises a bridge circuit formed by a first power switch, a second power switch, a third power switch and a fourth power switch, wherein the first power switch is connected with a first driving unit; the second power switch is connected with a second driving unit; the third power switch is connected with a third driving unit; the fourth power switch is connected with a fourth driving unit; the bridge circuit is provided with a connecting point A and a connecting point B which are symmetric to each other and are taken as alternating-current input ends, and a connecting point C and a connecting point C which are symmetric to each other and are taken as direct-current pulse ends; a first capacitor is bridged between the connecting point C and the connecting point D; the first driving unit and the second driving unit are connected with the connecting point A; and the third driving unit and the fourth driving unit are connected with the connecting point B.
Description
Technical field
The invention belongs to the parallel network power generation technical field, relate in particular to a kind of self-powered that is used for photovoltaic combining inverter commutation full-bridge circuit frequently synchronously of starting building.
Background technology
Combining inverter is an indispensable equipment in the grid-connected photovoltaic system.In the single-phase photovoltaic grid-connected inverter of middle low power, normal employing and the synchronous power frequency commutation full-bridge of industrial frequency AC electrical network voltage will have the unidirectional pulsating current of direct current that changes by sinusoidal rule of half period and be converted into sine wave alternating current stream injection electrical network.
The drive circuit of conventional full-bridge circuit partly is made up of multichannel isolation drive power supply, photoelectric isolated driver etc. usually, but also need specialized circuitry the driving pulse with the line voltage strict synchronism is provided, complex structure, and cost is high.
Summary of the invention
The object of the invention is exactly for addressing the above problem, and a kind of self-powered commutation full-bridge circuit synchronously of starting building frequently is provided, and it is simple, cost is low, reliable operation, be applicable to combining inverter.
For realizing above-mentioned purpose, the present invention adopts following technical scheme:
A kind of self-powered commutation full-bridge circuit frequently synchronously of starting building; It comprises the bridge circuit that first power switch, second power switch, the 3rd power switch and the 4th power switch form; First power switch is connected with first driver element; Second power switch is connected with second driver element, the 3rd power switch and the 3rd driver element, and the 4th power switch is connected with the 4 wheel driven moving cell;
Bridge circuit is provided with tie point A and the tie point B of symmetry as ac input end, and symmetrical tie point C and tie point D are as the dc pulse end;
First electric capacity is connected across between tie point C and the tie point D;
First driver element, second driver element also are connected with tie point A, and the 3rd driver element also is connected with tie point B with the 4 wheel driven moving cell.
Said tie point A and B be the phase line L and the center line N of order cross streams electrical network respectively, and tie point C and tie point D it
Between inject the dc pulse electric current; When ac grid voltage is in positive half cycle; Need driving first power switch and the 4th power switch conducting, second power switch and the 3rd power switch to end; The electric current that is injected by tie point C injects AC network by tie point A after through first power switch; B returns by tie point, returns tie point D through the 4th power switch again; When ac grid voltage is in negative half period; Need driving second power switch and the 3rd power switch conducting, first power switch and the 4th power switch to end; The electric current that is injected by tie point C injects AC network by tie point B after through the 3rd power switch; A returns by tie point, returns tie point D through second power switch again.
Said first driver element has identical internal structure with the 3rd driver element; Include first resistor R 1, the first diode D1, second resistor R 2, the first transistor Q1, transistor seconds Q2, the 3rd resistor R 3, the 4th resistor R 4, the first zener Z1, the second diode D2, the second capacitor C2 and the 5th resistor R 5, wherein:
1. the end of each driver element is connected with first end of corresponding first resistor R 1;
First end of second end of first resistor R 1 and the anode of the first diode D1, second resistor R 2 and the base stage of the first transistor Q1 interconnect;
Second end of second end of the negative electrode of the first diode D1 and second resistor R 2, the emitter of the first transistor Q1, the 3rd resistor R 3 and the base stage of transistor seconds Q2 interconnect;
3. the end of second end of the collector electrode of transistor seconds Q2 and the 4th resistor R 4, the negative electrode of the first zener Z1 and respective drive unit interconnects;
First end of first end of first end of the 3rd resistor R 3 and the 4th resistor R 4, the negative electrode of the second diode D2 and the second capacitor C2 interconnects;
The anode of the second diode R2 is connected with first end of the 5th resistor R 5;
Second end of the 5th resistor R 5 is connected with the 2. end of respective drive unit;
Second end of the anode of the emitter of the collector electrode of the first transistor Q1 and transistor seconds Q2, the first zener Z1, the second capacitor C2 and the 4. end of respective drive unit interconnect.
Second driver element wherein has identical internal structure with the 4 wheel driven moving cell; Include the 6th resistor R 6, the 7th resistor R 7, the 3rd transistor Q3, the 4th transistor Q4, the 8th resistor R 8, the 9th resistor R 9, the second zener Z2, the 3rd diode D3, the 3rd capacitor C3 and the tenth resistor R 10, wherein:
1. the end of said each driver element is connected with first end of corresponding the 6th resistor R 6;
First end of second end of the 6th resistor R 6 and the 7th resistor R 7 and the base stage of the 3rd transistor Q3 interconnect;
Second end of the collector electrode of the 3rd transistor Q3 and the 8th resistor R 8 and the base stage of the 4th transistor Q4 interconnect;
3. the end of second end of the collector electrode of the 4th transistor Q4 and the 9th resistor R 9, the negative electrode of the second zener Z2 and respective drive unit interconnects;
First end of first end of first end of the 8th resistor R 8 and the 9th resistor R 9, the negative electrode of the 3rd diode D3 and the 3rd capacitor C3 interconnects;
The anode of the 3rd diode D3 is connected with first end of the tenth resistor R 10;
Second end of the tenth resistor R 10 is connected with the 2. end of respective drive unit;
The emitter of second end of the 7th resistor R 7 and the emitter of the 3rd transistor Q3, the 4th transistor Q4, the anode of the second zener Z2, second end of the 3rd capacitor C3 and the 4. end of respective drive unit interconnect.
Said the first transistor Q1 is a PNP transistor, and transistor seconds Q2 is a NPN transistor.
Said the 3rd transistor Q3 and the 4th transistor Q4 are NPN transistors.
Said four power switchs are semiconductor power switch device MOSFET or IGBT.
Operation principle of the present invention is:
Under the alternating voltage effect between tie point A and the tie point B, owing to the unilateral conduction of the inverse parallel diode that is comprised in four semiconductor power switch devices, all there is dc pulse moving voltage in each power switch two ends.This pulsating voltage through the 2. end of respective drive unit and 4. end get into each respective drive unit; Through the 5th resistor R 5 and the second diode D2 to the second capacitor C2 charge (first driver element and the 3rd driver element); Perhaps the 3rd capacitor C3 is charged (second driver element and 4 wheel driven moving cell), on the second capacitor C2 and the 3rd capacitor C3, set up direct voltage through the tenth resistor R 10 and the 3rd diode Q2.This direct voltage is after the clamp circuit clamper of clamp circuit that the 4th resistor R 4 and the first zener Z1 constitute or the 9th resistor R 9 and second zener Z2 formation; Can obtain suitable effective driving voltage; 3. end output by the respective drive unit drives corresponding power switch.Each driving voltage also will receive the 1. control of terminal potential of respective drive unit.For first driver element and the 3rd driver element; If 1. terminal potential fully is lower than 4. terminal potential, then wherein the first transistor Q1 conducting, transistor seconds Q2 ends; So 3. end and the 4. effective driving voltage of output between end drive corresponding power switch conducting; If 1. the end points current potential is equal to or higher than 4. terminal potential, then wherein the first transistor Q1 ends, transistor seconds Q2 conducting, will 3. hold and 4. between end voltage clamp to approaching zero (saturation voltage drop of transistor seconds Q2), corresponding power switch by.For second driver element and 4 wheel driven moving cell; If 1. terminal potential fully is higher than 4. terminal potential, then wherein the 3rd transistor Q3 conducting, the 4th transistor Q4 ends; So 3. end and the 4. effective driving voltage of output between end drive corresponding power switch conducting; If 1. the end points current potential is equal to or less than 4. terminal potential, then wherein the 3rd transistor Q3 ends, the 4th transistor Q4 conducting, will 3. hold and 4. between end voltage clamp to approaching zero (saturation voltage drop of the 4th transistor Q4), corresponding power switch by.By this control law; Annexation according to the employing technical scheme is analyzed easily; When the alternating voltage between tie point A and the tie point B is in positive half cycle, can control first driver element and 4 wheel driven moving cell and export effective driving voltage, drive first power switch and the 4th power switch conducting; And the driving voltage of second driver element and the output of the 3rd driver element is approaching zero, and second power switch and the 3rd power switch end; When the alternating voltage between tie point A and the tie point B is in negative half period; Meeting control second driver element and the 3rd driver element are exported effective driving voltage; Drive second power switch and the 3rd power switch conducting; And the driving voltage of first driver element and the output of 4 wheel driven moving cell is approaching zero, and first power switch and the 4th power switch end.Therefore; Under the alternating voltage effect between tie point A and the tie point B, four driver elements can be realized required driven in synchronism automatically, and have reliable interlocked relationship between each power switch; Straight-through problem can not take place; Simultaneously near alternating voltage zero-crossing point, four driver elements all can the driving power switch, generates required switching dead band automatically.The effect of the first capacitor C1 is to prevent to produce between the tie point C and tie point D in the Dead Time of commutation process the transient state high voltage.
Useful implementation result of the present invention is:
1. can under the grid ac voltage effect, realize the required driven in synchronism of the synchronous commutation full-bridge of power frequency automatically, working stability is reliable;
2. realize the interlocking between each power switch automatically, and near alternating voltage zero-crossing point, generate suitable power switch switching dead band automatically, straight-through phenomenon can not take place in the guaranteed output switch;
3. simple in structure, implement easily;
4. omitted devices such as the required multichannel isolation drive power supply of conventional full bridge driving circuit, photoelectric isolated driver, driven in synchronism pulse-generating circuit, cost significantly reduces.
Description of drawings
Fig. 1 is the first embodiment of the invention structural representation;
Fig. 2 is the second embodiment of the invention structural representation;
Fig. 3 is said first driver element and the 3rd driver element circuit diagram;
Fig. 4 is said second driver element and 4 wheel driven moving cell circuit diagram.
Wherein: 1 first driver element, 2 first power switchs, 3 second driver elements, 4 second power switchs, 5 the 3rd driver elements, 6 the 3rd power switchs, 74 wheel driven moving cells, 8 the 4th power switchs, 9 first capacitors.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is described further.
Embodiment 1:
As shown in Figure 1; A kind of self-powered commutation full-bridge circuit frequently synchronously of starting building; It comprises first driver element 1, first power switch 2, second driver element 3, second power switch 4, the 3rd driver element 5, the 3rd power switch 6, moving single 7 yuan of 4 wheel driven, the 4th power switch 8 and first capacitor 9, wherein:
2. the end of first driver element 1 connects first end and second end of first power switch 2, the control end of 3. termination first power switch 2 of first driver element 1 respectively with 4. end;
2. the end of second driver element 3 connects first end and second end of second power switch 4, the control end of 3. termination second power switch 4 of second driver element 3 respectively with 4. end;
2. the end of the 3rd driver element 5 connects first end and second end of the 3rd power switch 6, the control end of 3. termination the 3rd power switch 6 of the 3rd driver element 5 respectively with 4. end;
2. the end of 4 wheel driven moving cell 7 connects first end and second end of the 4th power switch 8, the control end of 3. termination the 4th power switch 8 of 4 wheel driven moving cell 7 respectively with 4. end;
1. the end of first driver element 1 all is connected with tie point B with the 1. end of second driver element 3;
1. the end of the 3rd driver element 5 all is connected with tie point A with the 1. end of 4 wheel driven moving cell 7.
The said self-powered commutation full-bridge circuit frequently synchronously of starting building, first power switch 2 wherein, second power switch 4, the 3rd power switch 6 and the 4th power switch 8 are semiconductor power switch device MOSFET, and be as shown in Figure 1; The collector electrode of the drain electrode of the corresponding MOSFET of first end of said each power switch, the source electrode of the corresponding MOSFET of second end of said each power switch, the corresponding MOSFET grid of the control end of said each power switch.
1. the end of said respective drive unit is connected with first end of first resistor R 1;
First end of second end of first resistor R 1 and the anode of the first diode D1, second resistor R 2 and the base stage of the first transistor Q1 interconnect;
Second end of second end of the negative electrode of the first diode D1 and second resistor R 2, the emitter of the first transistor Q1, the 3rd resistor R 3 and the base stage of transistor seconds Q2 interconnect;
3. the end of second end of the collector electrode of transistor seconds Q2 and the 4th resistor R 4, the negative electrode of the first zener Z1 and respective drive unit interconnects;
First end of first end of first end of the 3rd resistor R 3 and the 4th resistor R 4, the negative electrode of the second diode D2 and the second capacitor C2 interconnects;
The anode of the second diode D2 is connected with first end of the 5th resistor R 5;
Second end of the 5th resistor R 5 is connected with the 2. end of respective drive unit;
Second end of the anode of the emitter of the collector electrode of the first transistor Q1 and transistor seconds Q2, the first zener Z1, the second capacitor C2 and the 4. end of respective drive unit interconnect.
1. the end of said respective drive unit is connected with first end of the 6th resistor R 6;
First end of second end of the 6th resistor R 6 and the 7th resistor R 7 and the base stage of the 3rd transistor Q3 interconnect;
Second end of the collector electrode of the 3rd transistor Q3 and the 8th resistor R 8 and the base stage of the 4th transistor Q4 interconnect;
3. the end of second end of the collector electrode of the 4th transistor Q4 and the 9th resistor R 9, the negative electrode of the second zener Z2 and said respective drive unit interconnects;
First end of first end of first end of the 8th resistor R 8 and the 9th resistor R 9, the negative electrode of the 3rd diode D3 and the 3rd capacitor C3 interconnects;
The anode of the 3rd diode D3 is connected with first end of the tenth resistor R 10;
Second end of the tenth resistor R 10 is connected with the 2. end of said respective drive unit;
Second end of the emitter of second end of the 7th resistor R 7 and the emitter of the 3rd transistor Q3, the 4th transistor Q4, the anode of the second zener Z2, the 3rd capacitor C3 and the 4. end of said respective drive unit interconnect.
Said first driver element 1, second driver element 3, the 3rd driver element 5 and 4 wheel driven moving cell 7, the first transistor Q1 wherein is a PNP transistor, transistor seconds Q2, the 3rd transistor Q3 and the 4th transistor Q4 are NPN transistors.
During circuit application, tie point A and B be the phase line L and the center line N of order cross streams electrical network respectively, and between tie point C and tie point D, injects the dc pulse electric current.
As shown in Figure 1, under the alternating voltage effect between tie point A and the tie point B, owing to the unilateral conduction of the inverse parallel diode that is comprised in 2,4,6,8 four semiconductor power switch devices, all there is dc pulse moving voltage in each power switch two ends.This pulsating voltage through the 2. end of 1,3,5,7 each driver element and 4. end get into each driver element; Like Fig. 3 and shown in Figure 4; Through the 5th resistor R 5 and the second diode D2 to the second capacitor C2 charge (first driver element 1 and the 3rd driver element 5); Perhaps the 3rd capacitor C3 is charged ( second driver element 3 and 4 wheel driven moving cell 7), on the second capacitor C2 and the 3rd capacitor C3, set up direct voltage through the tenth resistor R 10 and the 3rd diode D3.This direct voltage is after the clamp circuit clamper of clamp circuit that the 4th resistor R 4 and the first zener Z1 constitute or the 9th resistor R 9 and second zener Z2 formation; Can obtain suitable effective driving voltage; 3. end output by each driver element drives corresponding power switch.Each driving voltage also will receive the 1. control of terminal potential of respective drive unit.For first driver element 1 and the 3rd driver element 5; If 1. terminal potential fully is lower than 4. terminal potential, then wherein the first transistor Q1 conducting, transistor seconds Q2 ends; So 3. end and the 4. effective driving voltage of output between end drive corresponding power switch conducting; If 1. the end points current potential is equal to or higher than 4. terminal potential, then wherein the first transistor Q1 ends, transistor seconds Q2 conducting, will 3. hold and 4. between end voltage clamp to approaching zero (saturation voltage drop of transistor seconds Q2), corresponding power switch by.For second driver element 3 and 4 wheel driven moving cell 7; If 1. terminal potential fully is higher than 4. terminal potential, then wherein the 3rd transistor Q3 conducting, the 4th transistor Q4 ends; So 3. end and the 4. effective driving voltage of output between end drive corresponding power switch conducting; If 1. the end points current potential is equal to or less than 4. terminal potential, then wherein the 3rd transistor Q3 ends, the 4th transistor Q4 conducting, will 3. hold and 4. between end voltage clamp to approaching zero (saturation voltage drop of the 4th transistor Q4), corresponding power switch by.By this control law; Analyze easily according to annexation shown in Figure 1; When the alternating voltage between tie point A and the tie point B is in positive half cycle, can control first driver element 1 and the effective driving voltage of 4 wheel driven moving cell 7 outputs, drive first power switch 2 and 8 conductings of the 4th power switch; And the driving voltage of second driver element 3 and 5 outputs of the 3rd driver element is approaching zero, and second power switch 4 and the 3rd power switch 6 end; When the alternating voltage between tie point A and the tie point B is in negative half period; Can control second driver element 3 and the suitable driving voltage of the 3rd driver element 5 outputs; Drive second power switch 4 and 6 conductings of the 3rd power switch; And the driving voltage of first driver element 1 and 7 outputs of 4 wheel driven moving cell is approaching zero, and first power switch 2 and the 4th power switch 8 end.Therefore; Under the alternating voltage effect between tie point A and the tie point B, four driver elements can be realized required driven in synchronism automatically, and have reliable interlocked relationship between each power switch; Straight-through problem can not take place; Simultaneously near alternating voltage zero-crossing point, four driver elements all can the driving power switch, generates required switching dead band automatically.The effect of first capacitor 9 is to prevent to produce between the tie point C and tie point D in the Dead Time of commutation process the transient state high voltage.
Embodiment 2:
In the present embodiment, first power switch 2, second power switch 4, the 3rd power switch 6 and the 4th power switch 8 are IGBT, and be as shown in Figure 2; The collector electrode of the corresponding IGBT of first end of said power switch, the emitter of the corresponding IGBT of second end of said power switch, the grid of the corresponding IGBT of the control end of said power switch.All the other structures are identical with embodiment 1.
Under the alternating voltage effect between tie point A and the tie point B, owing to the unilateral conduction of the inverse parallel diode that is comprised in 2,4,6,8 four semiconductor power switch devices, all there is dc pulse moving voltage in each power switch two ends.This pulsating voltage through the 2. end of 1,3,5,7 each driver element and 4. end get into each driver element; Like Fig. 3 and shown in Figure 4; Through the 5th resistor R 5 and the second diode D2 to the second capacitor C2 charge (first driver element 1 and the 3rd driver element 5); Perhaps the 3rd capacitor C3 is charged ( second driver element 3 and 4 wheel driven moving cell 7), on the second capacitor C2 and the 3rd capacitor C3, set up direct voltage through the tenth resistor R 10 and the 3rd diode D3.This direct voltage is after the clamp circuit clamper of clamp circuit that the 4th resistor R 4 and the first zener Z1 constitute or the 9th resistor R 9 and second zener Z2 formation; Can obtain suitable effective driving voltage; 3. end output by each driver element drives corresponding power switch.Each driving voltage also will receive the 1. control of terminal potential of respective drive unit.For first driver element 1 and the 3rd driver element 5; If 1. terminal potential fully is lower than 4. terminal potential, then wherein the first transistor Q1 conducting, transistor seconds Q2 ends; So 3. end and the 4. effective driving voltage of output between end drive corresponding power switch conducting; If 1. the end points current potential is equal to or higher than 4. terminal potential, then wherein the first transistor Q1 ends, transistor seconds Q2 conducting, will 3. hold and 4. between end voltage clamp to approaching zero (saturation voltage drop of transistor seconds Q2), corresponding power switch by.For second driver element 3 and 4 wheel driven moving cell 7; If 1. terminal potential fully is higher than 4. terminal potential, then wherein the 3rd transistor Q3 conducting, the 4th transistor Q4 ends; So 3. end and the 4. effective driving voltage of output between end drive corresponding power switch conducting; If 1. the end points current potential is equal to or less than 4. terminal potential, then wherein the 3rd transistor Q3 ends, the 4th transistor Q4 conducting, will 3. hold and 4. between end voltage clamp to approaching zero (saturation voltage drop of the 4th transistor Q4), corresponding power switch by.By this control law; Analyze easily according to annexation shown in Figure 2; When the alternating voltage between tie point A and the tie point B is in positive half cycle, can control first driver element 1 and the effective driving voltage of 4 wheel driven moving cell 7 outputs, drive first power switch 2 and 8 conductings of the 4th power switch; And the driving voltage of second driver element 3 and 5 outputs of the 3rd driver element is approaching zero, and second power switch 4 and the 3rd power switch 6 end; When the alternating voltage between tie point A and the tie point B is in negative half period; Can control second driver element 3 and the suitable driving voltage of the 3rd driver element 5 outputs; Drive second power switch 4 and 6 conductings of the 3rd power switch; And the driving voltage of first driver element 1 and 7 outputs of 4 wheel driven moving cell is approaching zero, and first power switch 2 and the 4th power switch 8 end.Therefore; Under the alternating voltage effect between tie point A and the tie point B, four driver elements can be realized required driven in synchronism automatically, and have reliable interlocked relationship between each power switch; Straight-through problem can not take place; Simultaneously near alternating voltage zero-crossing point, four driver elements all can the driving power switch, generates required switching dead band automatically.The effect of first capacitor 9 is to prevent to produce between the tie point C and tie point D in the Dead Time of commutation process the transient state high voltage.
Claims (7)
1. the self-powered commutation full-bridge circuit synchronously of starting building frequently; It is characterized in that; It comprises the bridge circuit that first power switch, second power switch, the 3rd power switch and the 4th power switch form, and first power switch is connected with first driver element, and second power switch is connected with second driver element; The 3rd power switch and the 3rd driver element, the 4th power switch is connected with the 4 wheel driven moving cell;
Bridge circuit is provided with tie point A and the tie point B of symmetry as ac input end, and symmetrical tie point C and tie point D are as the dc pulse end;
First electric capacity is connected across between tie point C and the tie point D;
First driver element, second driver element also are connected with tie point A, and the 3rd driver element also is connected with tie point B with the 4 wheel driven moving cell.
2. the self-powered as claimed in claim 1 commutation full-bridge circuit frequently synchronously of starting building is characterized in that, said tie point A and B be the phase line L and the center line N of order cross streams electrical network respectively, and between tie point C and tie point D injection dc pulse electric current; When ac grid voltage is in positive half cycle; Need driving first power switch and the 4th power switch conducting, second power switch and the 3rd power switch to end; The electric current that is injected by tie point C injects AC network by tie point A after through first power switch; B returns by tie point, returns tie point D through the 4th power switch again; When ac grid voltage is in negative half period; Need driving second power switch and the 3rd power switch conducting, first power switch and the 4th power switch to end; The electric current that is injected by tie point C injects AC network by tie point B after through the 3rd power switch; A returns by tie point, returns tie point D through second power switch again.
3. the self-powered as claimed in claim 1 commutation full-bridge circuit frequently synchronously of starting building; It is characterized in that; Said first driver element has identical internal structure with the 3rd driver element; Include first resistor R 1, the first diode D1, second resistor R 2, the first transistor Q1, transistor seconds Q2, the 3rd resistor R 3, the 4th resistor R 4, the first zener Z1, the second diode D2, the second capacitor C2 and the 5th resistor R 5, wherein:
1. the end of each driver element is connected with first end of corresponding first resistor R 1;
First end of second end of first resistor R 1 and the anode of the first diode D1, second resistor R 2 and the base stage of the first transistor Q1 interconnect;
Second end of second end of the negative electrode of the first diode D1 and second resistor R 2, the emitter of the first transistor Q1, the 3rd resistor R 3 and the base stage of transistor seconds Q2 interconnect;
3. the end of second end of the collector electrode of transistor seconds Q2 and the 4th resistor R 4, the negative electrode of the first zener Z1 and respective drive unit interconnects;
First end of first end of first end of the 3rd resistor R 3 and the 4th resistor R 4, the negative electrode of the second diode D2 and the second capacitor C2 interconnects;
The anode of the second diode R2 is connected with first end of the 5th resistor R 5;
Second end of the 5th resistor R 5 is connected with the 2. end of respective drive unit;
Second end of the anode of the emitter of the collector electrode of the first transistor Q1 and transistor seconds Q2, the first zener Z1, the second capacitor C2 and the 4. end of respective drive unit interconnect.
4. the self-powered as claimed in claim 1 commutation full-bridge circuit frequently synchronously of starting building; It is characterized in that; Second driver element wherein has identical internal structure with the 4 wheel driven moving cell; Include the 6th resistor R 6, the 7th resistor R 7, the 3rd transistor Q3, the 4th transistor Q4, the 8th resistor R 8, the 9th resistor R 9, the second zener Z2, the 3rd diode D3, the 3rd capacitor C3 and the tenth resistor R 10, wherein:
1. the end of said each driver element is connected with first end of corresponding the 6th resistor R 6;
First end of second end of the 6th resistor R 6 and the 7th resistor R 7 and the base stage of the 3rd transistor Q3 interconnect;
Second end of the collector electrode of the 3rd transistor Q3 and the 8th resistor R 8 and the base stage of the 4th transistor Q4 interconnect;
3. the end of second end of the collector electrode of the 4th transistor Q4 and the 9th resistor R 9, the negative electrode of the second zener Z2 and respective drive unit interconnects;
First end of first end of first end of the 8th resistor R 8 and the 9th resistor R 9, the negative electrode of the 3rd diode D3 and the 3rd capacitor C3 interconnects;
The anode of the 3rd diode D3 is connected with first end of the tenth resistor R 10;
Second end of the tenth resistor R 10 is connected with the 2. end of respective drive unit;
The emitter of second end of the 7th resistor R 7 and the emitter of the 3rd transistor Q3, the 4th transistor Q4, the anode of the second zener Z2, second end of the 3rd capacitor C3 and the 4. end of respective drive unit interconnect.
5. the self-powered as claimed in claim 3 commutation full-bridge circuit frequently synchronously of starting building is characterized in that said the first transistor Q1 is a PNP transistor, and transistor seconds Q2 is a NPN transistor.
6. the self-powered as claimed in claim 4 commutation full-bridge circuit frequently synchronously of starting building is characterized in that said the 3rd transistor Q3 and the 4th transistor Q4 are NPN transistors.
7. the self-powered as claimed in claim 1 commutation full-bridge circuit frequently synchronously of starting building is characterized in that said four power switchs are semiconductor power switch device MOSFET or IGBT.
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| CN201210144975.2A CN102664551B (en) | 2012-05-11 | 2012-05-11 | Self-driven power frequency synchronous phase conversion full-bridge circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532414A (en) * | 2013-09-26 | 2014-01-22 | 惠州三华工业有限公司 | Synchronous self-driving power frequency commutation bridge circuit of grid-connected inverter |
| CN104811019A (en) * | 2015-04-21 | 2015-07-29 | 吴秀昌 | Self-adaptive novel soft switching full-bridge circuit driving method and full-bridge driving circuit |
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| CN202550916U (en) * | 2012-05-11 | 2012-11-21 | 德州三和电器有限公司 | Self-driven power frequency synchronization phase-changing full bridge circuit |
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| CN102124640A (en) * | 2008-08-20 | 2011-07-13 | 电方便有限公司 | Single-phase self-driven full-bridge synchronous rectification |
| CN102246405A (en) * | 2008-08-20 | 2011-11-16 | 电方便有限公司 | Generalized AC-DC synchronous rectification techniques for single- and multi-phase systems |
| US20110075460A1 (en) * | 2009-09-28 | 2011-03-31 | Harris Corporation | Three-phase low-loss rectifier |
| CN202550916U (en) * | 2012-05-11 | 2012-11-21 | 德州三和电器有限公司 | Self-driven power frequency synchronization phase-changing full bridge circuit |
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| CN103532414A (en) * | 2013-09-26 | 2014-01-22 | 惠州三华工业有限公司 | Synchronous self-driving power frequency commutation bridge circuit of grid-connected inverter |
| CN103532414B (en) * | 2013-09-26 | 2017-02-22 | 惠州三华工业有限公司 | Synchronous self-driving power frequency commutation bridge circuit of grid-connected inverter |
| CN104811019A (en) * | 2015-04-21 | 2015-07-29 | 吴秀昌 | Self-adaptive novel soft switching full-bridge circuit driving method and full-bridge driving circuit |
| CN104811019B (en) * | 2015-04-21 | 2017-05-03 | 吴秀昌 | Self-adaptive novel soft switching full-bridge circuit driving method and full-bridge driving circuit |
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