CN103532414A - Synchronous self-driving power frequency commutation bridge circuit of grid-connected inverter - Google Patents
Synchronous self-driving power frequency commutation bridge circuit of grid-connected inverter Download PDFInfo
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Abstract
The invention relates to a synchronous self-driving power frequency commutation bridge circuit of a grid-connected inverter. According to the synchronous self-driving power frequency commutation bridge circuit, four power switching circuits are in bridge type connection; the four power switching circuits are respectively driven by four driving circuits; the synchronous self-driving of the synchronous self-driving power frequency commutation bridge circuit is realized under the effect of an electric supply power grid; the amplitude, the frequency and the phase of the synchronous self-driving power frequency commutation bridge circuit are the same as those of an electric supply; and the synchronous self-driving power frequency commutation bridge circuit is rapid in establishment of the synchronous self-driving, high in stability, simple to realize and low in cost.
Description
Technical field
The present invention relates to photovoltaic combining inverter technical field, be specifically related to a kind of synchronous self-driven power frequency commutation bridge circuit of combining inverter, be particularly useful for photovoltaic combining inverter.
Background technology
Along with a large amount of consumption of former wet goods non-renewable energy resources, the price of crude oil is constantly soaring, and the use of crude oil is day by day serious to the pollution problem of environment simultaneously.Not only economy but also environmental protection are all being found in the whole world now, and reproducible new forms of energy.Wherein solar energy has immeasurable application market as the new forms of energy of a kind of economy, environmental protection.At present, the main mode of utilizing of solar energy is to convert solar energy into electrical energy for load by photovoltaic cell.Due to photovoltaic cell output be direct current, and the load of practical application major part is AC load, therefore the application of solar energy has run into bottleneck.
In order to address the above problem, people propose photovoltaic DC-to-AC converter, the direct current of photovoltaic cell output are converted to the alternating current of different voltage, different frequency.At present, being most widely used of civil power, therefore for solar energy is widely used, people by photovoltaic DC-to-AC converter, the direct current of photovoltaic cell output is converted into and civil power with pressing with alternating current frequently.
At present, photovoltaic DC-to-AC converter comprises off-grid type photovoltaic DC-to-AC converter and parallel net type photovoltaic DC-to-AC converter, wherein, photovoltaic combining inverter mainly adopts the type of drive of Using Sinusoidal Pulse Width Modulation (SPWM), adopts SPWM type of drive generally need to adopt IC chip and corresponding software condition, this type of drive cost is high, realize difficulty large, by hardware, realize Real-time Feedback in addition and drive, by hardware, realize the type of drive of feedback modulation the modulation of hardware is had relatively high expectations, realize difficulty large, modulating time is long.
Summary of the invention
The object of the invention is to overcome shortcomings and deficiencies of the prior art, the synchronous self-driven power frequency commutation bridge circuit that a kind of cost is low, realize simple combining inverter is provided.
Object of the present invention is achieved through the following technical solutions: a kind of synchronous self-driven power frequency commutation bridge circuit of combining inverter, comprise: boost rectifying circuit, the first power switch circuit, the second power switch circuit, the 3rd power switch circuit, the 4th power switch circuit, the first drive circuit, the second drive circuit, the 3rd drive circuit and the 4th drive circuit, described the first power switch circuit, the second power switch circuit, the 3rd power switch circuit and the 4th power switch circuit connect into bridge circuit
In bridge circuit, the tie point of the tie point of the first power switch circuit and the 3rd power switch circuit and the second power switch circuit and the 4th power switch circuit connects respectively utility grid two outputs,
The tie point of the tie point of the first power switch circuit and the second power switch circuit and the 3rd power switch circuit and the 4th power switch circuit connects respectively boost rectifying circuit two outputs;
Described the first drive circuit is connected with the first output of the first power switch circuit and utility grid respectively, described the second drive circuit is connected with the second output of the second power switch circuit and utility grid respectively, described the 3rd drive circuit is connected with the first output of the 3rd power switch circuit and utility grid respectively, and described the 4th drive circuit is connected with the second output of the 4th power switch circuit and utility grid respectively.
Further, described the first drive circuit comprises: the first diode D4, the second diode ZD1, the first capacitor C 2, the second capacitor C 3, the first resistance R 3, the second resistance R 2 and the first triode Q5,
The positive pole of described the first diode D4 connects the live wire of utility grid, negative pole connects the base stage of the first triode Q5, the first capacitor C 2 is in parallel with the first diode D4, the live wire of the second capacitor C 3 one termination utility grid, the other end is connected with the first power switch circuit by the second resistance R 2, connect one end of the first resistance R 3 simultaneously, the base stage of another termination first triode Q5 of the first resistance R 3, the emitter of the first triode Q5 connects the live wire of utility grid, collector electrode connects the first power switch circuit, the positive pole of the second diode ZD1 connects the live wire of utility grid, negative pole connects the first power switch circuit.
Further, described the second drive circuit comprises: the 5th diode D6, the 6th diode ZD2, the 3rd capacitor C 4, the 4th capacitor C 5, the 3rd resistance R 5, the 4th resistance R 4 and the second triode Q6,
The positive pole of described the 5th diode D6 connects the zero line of utility grid, negative pole connects the base stage of the second triode Q6, the 3rd capacitor C 4 is in parallel with the 5th diode D6, the zero line of the 4th capacitor C 5 one termination utility grid, the other end is connected with the second power switch circuit by the 4th resistance R 4, connect one end of the 3rd resistance R 5 simultaneously, the base stage of another termination second triode Q6 of the 3rd resistance R 5, the emitter of the second triode Q6 connects the zero line of utility grid, collector electrode connects the second power switch circuit, the positive pole of the 6th diode ZD2 connects the zero line of utility grid, negative pole connects the second power switch circuit.
Further, the base stage of described the first triode Q5 is also connected with the positive pole of the 3rd diode D2, and the negative pole of the 3rd diode D2 is connected with the positive pole of the 4th diode D3, and the negative pole of the 4th diode D3 connects the node between the second capacitor C 3 and the first resistance R 3;
The base stage of the second triode Q6 is also connected with the positive pole of the 7th diode D5, and the negative pole of the 7th diode D5 is connected with the positive pole of the 8th diode D7, and the negative pole of the 8th diode D7 connects the node between the 4th capacitor C 5 and the 3rd resistance R 5;
The negative pole of the 7th diode D5 is also connected with the negative pole of the 3rd diode by the 5th resistance R 1.
Further, described the first triode Q5 and the second triode Q6 are NPN triode.
Further, described the 3rd drive circuit comprises: the 6th resistance R 6, the 7th resistance R 7, the 8th resistance R 8, the 9th diode D8 and the tenth diode ZD3,
The zero line of described the 6th resistance R 6 one termination utility grid, the other end connects respectively the positive pole of the 9th diode D8, the negative pole of one end of the 8th resistance R 8, the tenth diode ZD3 and the 3rd power switch circuit, and the negative pole of the 9th diode D8 connects the zero line of utility grid by the 7th resistance R 7.
Further, described the 4th drive circuit comprises: the 9th resistance R 9, the tenth resistance R the 10, the 11 resistance R the 11, the 11 diode D9 and the 12 diode ZD4,
The live wire of described the 9th resistance R 9 one termination utility grid, the other end connects respectively positive pole, the 11 one end of resistance R 11, the negative pole of the 12 diode ZD4 and the 4th power switch circuit of the 11 diode D9, and the negative pole of the 11 diode D9 connects the live wire of utility grid by the tenth resistance R 10.
Further, described the first power switch circuit is the first metal-oxide-semiconductor, the second power switch circuit is the second metal-oxide-semiconductor, the 3rd power switch circuit is the 3rd metal-oxide-semiconductor, the 4th power switch circuit is the 4th metal-oxide-semiconductor, and described the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are N channel depletion type metal-oxide-semiconductor.
Further, the source electrode of the source electrode of described the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 connects respectively the live wire of boost rectifying circuit output;
The drain electrode of the drain electrode of the 3rd metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor Q4 connects respectively the zero line of boost rectifying circuit output;
The source electrode of the drain electrode of the first metal-oxide-semiconductor Q1 and the 3rd metal-oxide-semiconductor Q3 connects respectively the live wire of utility grid, and the source electrode of the drain electrode of the second metal-oxide-semiconductor Q2 and the 4th metal-oxide-semiconductor Q4 connects the zero line of utility grid;
The grid of the first metal-oxide-semiconductor Q1 connects the first drive circuit, and the grid of the second metal-oxide-semiconductor Q2 connects the second drive circuit, and the grid of the 3rd metal-oxide-semiconductor Q3 connects the 3rd drive circuit, and the grid of the 4th metal-oxide-semiconductor Q4 connects the 4th drive circuit.
Further, described boost rectifying circuit comprises: transformer, full-bridge rectification unit, filter unit, described transformer input termination photovoltaic cell, the input of output termination full-bridge rectification unit, the input of the output termination filter unit of full-bridge rectification unit.
The present invention comprises following advantage and beneficial effect compared to existing technology:
(1) the synchronous self-driven power frequency commutation bridge circuit of combining inverter of the present invention connects four power switch circuit bridge-types, and drive respectively above-mentioned four power switch circuits by four drive circuits, under the effect of utility grid, synchronous self-driven power frequency commutation bridge circuit has been realized synchronous self-driven, and its amplitude, frequency and phase place and civil power are in full accord, synchronous self-driven foundation is fast, and stability is high, realizes simple.
(2) synchronous self-driven power frequency commutation bridge circuit is simple in structure, adopts common common electronic component, realizes cost low.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of the synchronous self-driven power frequency commutation bridge circuit of a kind of combining inverter in embodiment.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited to this.
Embodiment
As shown in Figure 1, a kind of synchronous self-driven power frequency commutation bridge circuit of combining inverter, comprise: boost rectifying circuit, the first power switch circuit, the second power switch circuit, the 3rd power switch circuit, the 4th power switch circuit, the first drive circuit, the second drive circuit, the 3rd drive circuit and the 4th drive circuit, described the first power switch circuit, the second power switch circuit, the 3rd power switch circuit and the 4th power switch circuit connect into bridge circuit
In bridge circuit, the tie point of the tie point of the first power switch circuit and the 3rd power switch circuit and the second power switch circuit and the 4th power switch circuit connects respectively utility grid two outputs,
The tie point of the tie point of the first power switch circuit and the second power switch circuit and the 3rd power switch circuit and the 4th power switch circuit connects respectively boost rectifying circuit two outputs;
Described the first drive circuit is connected with the first output of the first power switch circuit and utility grid respectively, described the second drive circuit is connected with the second output of the second power switch circuit and utility grid respectively, described the 3rd drive circuit is connected with the first output of the 3rd power switch circuit and utility grid respectively, and described the 4th drive circuit is connected with the second output of the 4th power switch circuit and utility grid respectively.
Described boost rectifying circuit comprises: transformer, full-bridge rectification unit, filter unit, described transformer input termination photovoltaic cell, the input of output termination full-bridge rectification unit, the input of the output termination filter unit of full-bridge rectification unit.
Described the first power switch circuit is the first metal-oxide-semiconductor, the second power switch circuit is the second metal-oxide-semiconductor, the 3rd power switch circuit is the 3rd metal-oxide-semiconductor, the 4th power switch circuit is the 4th metal-oxide-semiconductor, and described the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are N channel depletion type metal-oxide-semiconductor.
The source electrode of the source electrode of described the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 connects respectively the live wire of boost rectifying circuit output;
The drain electrode of the drain electrode of the 3rd metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor Q4 connects respectively the zero line of boost rectifying circuit output;
The source electrode of the drain electrode of the first metal-oxide-semiconductor Q1 and the 3rd metal-oxide-semiconductor Q3 meets respectively the live wire ACL of utility grid, and the source electrode of the drain electrode of the second metal-oxide-semiconductor Q2 and the 4th metal-oxide-semiconductor Q4 meets the zero line ACN of utility grid;
The grid of the first metal-oxide-semiconductor Q1 connects the first drive circuit, and the grid of the second metal-oxide-semiconductor Q2 connects the second drive circuit, and the grid of the 3rd metal-oxide-semiconductor Q3 connects the 3rd drive circuit, and the grid of the 4th metal-oxide-semiconductor Q4 connects the 4th drive circuit.
Described the first drive circuit comprises: the first diode D4, the second diode ZD1, the first capacitor C 2, the second capacitor C 3, the first resistance R 3, the second resistance R 2 and the first triode Q5,
The positive pole of described the first diode D4 meets the live wire ACL of utility grid, negative pole connects the base stage of the first triode Q5, the first capacitor C 2 is in parallel with the first diode D4, the live wire ACL of the second capacitor C 3 one termination utility grid, the other end is connected with the grid of the first metal-oxide-semiconductor by the second resistance R 2, connect one end of the first resistance R 3 simultaneously, the base stage of another termination first triode Q5 of the first resistance R 3, the emitter of the first triode Q5 meets the live wire ACL of utility grid, collector electrode connects the grid of the first metal-oxide-semiconductor, the positive pole of the second diode ZD1 meets the live wire ACL of utility grid, negative pole connects the grid of the first metal-oxide-semiconductor.
Described the second drive circuit comprises: the 5th diode D6, the 6th diode ZD2, the 3rd capacitor C 4, the 4th capacitor C 5, the 3rd resistance R 5, the 4th resistance R 4 and the second triode Q6,
The positive pole of described the 5th diode D6 meets the zero line ACN of utility grid, negative pole connects the base stage of the second triode Q6, the 3rd capacitor C 4 is in parallel with the 5th diode D6, the zero line ACN of the 4th capacitor C 5 one termination utility grid, the other end is connected with the grid of the second metal-oxide-semiconductor by the 4th resistance R 4, connect one end of the 3rd resistance R 5 simultaneously, the base stage of another termination second triode Q6 of the 3rd resistance R 5, the emitter of the second triode Q6 meets the zero line ACN of utility grid, collector electrode connects the grid of the second metal-oxide-semiconductor, the positive pole of the 6th diode ZD2 meets the zero line ACN of utility grid, negative pole connects the grid of the second metal-oxide-semiconductor.
The base stage of described the first triode Q5 is also connected with the positive pole of the 3rd diode D2, and the negative pole of the 3rd diode D2 is connected with the positive pole of the 4th diode D3, and the negative pole of the 4th diode D3 connects the node between the second capacitor C 3 and the first resistance R 3;
The base stage of the second triode Q6 is also connected with the positive pole of the 7th diode D5, and the negative pole of the 7th diode D5 is connected with the positive pole of the 8th diode D7, and the negative pole of the 8th diode D7 connects the node between the 4th capacitor C 5 and the 3rd resistance R 5;
The negative pole of the 7th diode D5 is also connected with the negative pole of the 3rd diode by the 5th resistance R 1.
Described the first triode Q5 and the second triode Q6 are NPN triode.
Described the 3rd drive circuit comprises: the 6th resistance R 6, the 7th resistance R 7, the 8th resistance R 8, the 9th diode D8 and the tenth diode ZD3,
The zero line ACN of described the 6th resistance R 6 one termination utility grid, the other end connects respectively the positive pole of the 9th diode D8, the negative pole of one end of the 8th resistance R 8, the tenth diode ZD3 and the 3rd power switch circuit, and the negative pole of the 9th diode D8 meets the zero line ACN of utility grid by the 7th resistance R 7.
Described the 4th drive circuit comprises: the 9th resistance R 9, the tenth resistance R the 10, the 11 resistance R the 11, the 11 diode D9 and the 12 diode ZD4,
The live wire ACL of described the 9th resistance R 9 one termination utility grid, the other end connects respectively positive pole, the 11 one end of resistance R 11, the negative pole of the 12 diode ZD4 and the 4th power switch circuit of the 11 diode D9, and the negative pole of the 11 diode D9 meets the live wire ACL of utility grid by the tenth resistance R 10.
When the live wire ACL voltage of synchronous self-driven power frequency commutation bridge circuit powered on moment utility grid is during higher than zero line ACN, in first cycle of period 1, the live wire ACL of utility grid, charges by the first diode D4, the 3rd diode D2, the 5th resistance R 1, the 8th diode D7,5 pairs of the 3rd capacitor C 4 of the 3rd resistance R to the 4th capacitor C 5 chargings by the first diode D4, the 3rd diode D2, the 5th resistance R 1, the 8th diode D7.In second cycle of period 1, the live wire ACL voltage of utility grid is lower than zero line ACN, the 4th capacitor C 5 is discharged by the 4th resistance R 4, the 6th diode ZD2, driving voltage is provided to the second metal-oxide-semiconductor Q2, simultaneously, zero line ACN provides driving voltage, now the second metal-oxide-semiconductor Q2 and the equal conducting of the 3rd metal-oxide-semiconductor Q3 to after the 6th resistance R 6, the 8th resistance R 8 dividing potential drops the 3rd metal-oxide-semiconductor Q3.In addition, zero line ACN, charges by the 5th diode D6, the 7th diode D5, the 5th resistance R 1, the 4th diode D3,3 pairs of the first capacitor C 2 of the first resistance R to the second capacitor C 3 chargings by the 5th diode D6, the 7th diode D5, the 5th resistance R 1, the 4th diode D3.
In first cycle of second round, the live wire ACL voltage of utility grid is higher than zero line ACN, the discharge circuit that voltage in the junction capacitance of the second metal-oxide-semiconductor Q2 is formed by the 3rd capacitor C 4, the second triode Q6 is released fast, voltage in the junction capacitance of the 3rd metal-oxide-semiconductor Q3 is released fast by the 9th diode D8, the 7th resistance R 7, and the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3 enter cut-off state fast.Simultaneously, the second capacitor C 3 is discharged by the second resistance R 2, the second diode ZD1, driving voltage is provided to the first metal-oxide-semiconductor Q1, live wire ACL provides driving voltage, now the first metal-oxide-semiconductor Q1 and the equal conducting of the 4th metal-oxide-semiconductor Q4 to after the 9th resistance R the 9, the 11 resistance R 11 dividing potential drops the 4th metal-oxide-semiconductor Q4.In addition, live wire ACL charges to the 4th capacitor C 5 by the first diode D4, the 3rd diode D2, the 5th resistance R 1, the 8th diode D7 again, by the first diode D4, the 3rd diode D2, the 5th resistance R 1, the 8th diode D7,5 pairs of the 3rd capacitor C 4 chargings of the 3rd resistance R.In second cycle of second round, the live wire ACL voltage of utility grid is lower than zero line ACN, voltage in the junction capacitance of the first metal-oxide-semiconductor Q1 is released fast by the first capacitor C 2, the first triode Q5, voltage in the junction capacitance of the 4th metal-oxide-semiconductor Q4 is released fast by the 11 diode D9, the tenth resistance R 10, and the first metal-oxide-semiconductor Q1, the 4th metal-oxide-semiconductor Q4 enter cut-off state fast.In addition, the 4th capacitor C 5 is by the 4th resistance R 4, the 6th diode ZD2 electric discharge, driving voltage is provided to the second metal-oxide-semiconductor Q2, simultaneously, zero line ACN is through the 6th resistance R 6, driving voltage is provided after the 8th resistance R 8 dividing potential drops, to the 3rd metal-oxide-semiconductor Q3, now the second metal-oxide-semiconductor Q2 and the equal conducting of the 3rd metal-oxide-semiconductor Q3, and zero line ACN is by the 5th diode D6, the 7th diode D5, the 5th resistance R 1, the 4th diode D3 is to the second capacitor C 3 chargings, by the 5th diode D6, the 7th diode D5, the 5th resistance R 1, the 4th diode D3, first 3 pairs of resistance R the first capacitor C 2 chargings.
When the live wire ACL voltage of synchronous self-driven power frequency commutation bridge circuit powered on moment utility grid is during lower than zero line ACN, zero line ACN, charges by the 5th diode D6, the 7th diode D5, the 5th resistance R 1, the 4th diode D3,3 pairs of the first capacitor C 2 of the first resistance R to the second capacitor C 3 chargings by the 5th diode D6, the 7th diode D5, the 5th resistance R 1, the 4th diode D3.Its synchronous process of establishing is contrary higher than the situation of zero line ACN with the live wire ACL voltage when synchronous self-driven power frequency commutation bridge circuit powered on moment utility grid.
It is in full accord that synchronous self-driven power frequency commutation bridge circuit starts only to need half period can realize with civil power amplitude, frequency, phase place from access civil power.
Above-described embodiment is preferably execution mode of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under Spirit Essence of the present invention and principle, substitutes, combination, simplify; all should be equivalent substitute mode, within being included in protection scope of the present invention.
Claims (10)
1. the synchronous self-driven power frequency commutation bridge circuit of a combining inverter, it is characterized in that, comprise: boost rectifying circuit, the first power switch circuit, the second power switch circuit, the 3rd power switch circuit, the 4th power switch circuit, the first drive circuit, the second drive circuit, the 3rd drive circuit and the 4th drive circuit, described the first power switch circuit, the second power switch circuit, the 3rd power switch circuit and the 4th power switch circuit connect into bridge circuit
In bridge circuit, the tie point of the tie point of the first power switch circuit and the 3rd power switch circuit and the second power switch circuit and the 4th power switch circuit connects respectively utility grid two outputs,
The tie point of the tie point of the first power switch circuit and the second power switch circuit and the 3rd power switch circuit and the 4th power switch circuit connects respectively boost rectifying circuit two outputs;
Described the first drive circuit is connected with the first output of the first power switch circuit and utility grid respectively, described the second drive circuit is connected with the second output of the second power switch circuit and utility grid respectively, described the 3rd drive circuit is connected with the first output of the 3rd power switch circuit and utility grid respectively, and described the 4th drive circuit is connected with the second output of the 4th power switch circuit and utility grid respectively.
2. the synchronous self-driven power frequency commutation bridge circuit of combining inverter according to claim 1, it is characterized in that, described the first drive circuit comprises: the first diode D4, the second diode ZD1, the first capacitor C 2, the second capacitor C 3, the first resistance R 3, the second resistance R 2 and the first triode Q5
The positive pole of described the first diode D4 connects the live wire of utility grid, negative pole connects the base stage of the first triode Q5, the first capacitor C 2 is in parallel with the first diode D4, the live wire of the second capacitor C 3 one termination utility grid, the other end is connected with the first power switch circuit by the second resistance R 2, connect one end of the first resistance R 3 simultaneously, the base stage of another termination first triode Q5 of the first resistance R 3, the emitter of the first triode Q5 connects the live wire of utility grid, collector electrode connects the first power switch circuit, the positive pole of the second diode ZD1 connects the live wire of utility grid, negative pole connects the first power switch circuit.
3. the synchronous self-driven power frequency commutation bridge circuit of combining inverter according to claim 2, it is characterized in that, described the second drive circuit comprises: the 5th diode D6, the 6th diode ZD2, the 3rd capacitor C 4, the 4th capacitor C 5, the 3rd resistance R 5, the 4th resistance R 4 and the second triode Q6
The positive pole of described the 5th diode D6 connects the zero line of utility grid, negative pole connects the base stage of the second triode Q6, the 3rd capacitor C 4 is in parallel with the 5th diode D6, the zero line of the 4th capacitor C 5 one termination utility grid, the other end is connected with the second power switch circuit by the 4th resistance R 4, connect one end of the 3rd resistance R 5 simultaneously, the base stage of another termination second triode Q6 of the 3rd resistance R 5, the emitter of the second triode Q6 connects the zero line of utility grid, collector electrode connects the second power switch circuit, the positive pole of the 6th diode ZD2 connects the zero line of utility grid, negative pole connects the second power switch circuit.
4. the synchronous self-driven power frequency commutation bridge circuit of combining inverter according to claim 3, it is characterized in that: the base stage of described the first triode Q5 is also connected with the positive pole of the 3rd diode D2, the negative pole of the 3rd diode D2 is connected with the positive pole of the 4th diode D3, and the negative pole of the 4th diode D3 connects the node between the second capacitor C 3 and the first resistance R 3;
The base stage of the second triode Q6 is also connected with the positive pole of the 7th diode D5, and the negative pole of the 7th diode D5 is connected with the positive pole of the 8th diode D7, and the negative pole of the 8th diode D7 connects the node between the 4th capacitor C 5 and the 3rd resistance R 5;
The negative pole of the 7th diode D5 is also connected with the negative pole of the 3rd diode by the 5th resistance R 1.
5. the synchronous self-driven power frequency commutation bridge circuit of combining inverter according to claim 4, is characterized in that: described the first triode Q5 and the second triode Q6 are NPN triode.
6. the synchronous self-driven power frequency commutation bridge circuit of combining inverter according to claim 5, is characterized in that, described the 3rd drive circuit comprises: the 6th resistance R 6, the 7th resistance R 7, the 8th resistance R 8, the 9th diode D8 and the tenth diode ZD3,
The zero line of described the 6th resistance R 6 one termination utility grid, the other end connects respectively the positive pole of the 9th diode D8, the negative pole of one end of the 8th resistance R 8, the tenth diode ZD3 and the 3rd power switch circuit, and the negative pole of the 9th diode D8 connects the zero line of utility grid by the 7th resistance R 7.
7. the synchronous self-driven power frequency commutation bridge circuit of combining inverter according to claim 6, it is characterized in that, described the 4th drive circuit comprises: the 9th resistance R 9, the tenth resistance R the 10, the 11 resistance R the 11, the 11 diode D9 and the 12 diode ZD4
The live wire of described the 9th resistance R 9 one termination utility grid, the other end connects respectively positive pole, the 11 one end of resistance R 11, the negative pole of the 12 diode ZD4 and the 4th power switch circuit of the 11 diode D9, and the negative pole of the 11 diode D9 connects the live wire of utility grid by the tenth resistance R 10.
8. the synchronous self-driven power frequency commutation bridge circuit of combining inverter according to claim 7, it is characterized in that: described the first power switch circuit is the first metal-oxide-semiconductor, the second power switch circuit is the second metal-oxide-semiconductor, the 3rd power switch circuit is the 3rd metal-oxide-semiconductor, the 4th power switch circuit is the 4th metal-oxide-semiconductor, and described the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are N channel depletion type metal-oxide-semiconductor.
9. the synchronous self-driven power frequency commutation bridge circuit of combining inverter according to claim 8, is characterized in that: the source electrode of the source electrode of described the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 connects respectively the live wire of boost rectifying circuit output;
The drain electrode of the drain electrode of the 3rd metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor Q4 connects respectively the zero line of boost rectifying circuit output;
The source electrode of the drain electrode of the first metal-oxide-semiconductor Q1 and the 3rd metal-oxide-semiconductor Q3 connects respectively the live wire of utility grid, and the source electrode of the drain electrode of the second metal-oxide-semiconductor Q2 and the 4th metal-oxide-semiconductor Q4 connects the zero line of utility grid;
The grid of the first metal-oxide-semiconductor Q1 connects the first drive circuit, and the grid of the second metal-oxide-semiconductor Q2 connects the second drive circuit, and the grid of the 3rd metal-oxide-semiconductor Q3 connects the 3rd drive circuit, and the grid of the 4th metal-oxide-semiconductor Q4 connects the 4th drive circuit.
10. according to the synchronous self-driven power frequency commutation bridge circuit of the combining inverter described in claim 1 to 9 any one, it is characterized in that, described boost rectifying circuit comprises: transformer, full-bridge rectification unit, filter unit, described transformer input termination photovoltaic cell, the input of output termination full-bridge rectification unit, the input of the output termination filter unit of full-bridge rectification unit.
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| CN201310445653.6A CN103532414B (en) | 2013-09-26 | 2013-09-26 | Synchronous self-driving power frequency commutation bridge circuit of grid-connected inverter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116760275A (en) * | 2023-08-17 | 2023-09-15 | 成都吉瓦特科技有限公司 | Island-preventing circuit of miniature photovoltaic grid-connected inverter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100774145B1 (en) * | 2007-04-18 | 2007-11-07 | 주식회사 큐리온 | Power converter having a self driven synchronous rectifier |
| CN102664551A (en) * | 2012-05-11 | 2012-09-12 | 德州三和电器有限公司 | Self-driven power frequency synchronous phase conversion full-bridge circuit |
| CN203537257U (en) * | 2013-09-26 | 2014-04-09 | 惠州三华工业有限公司 | Synchronous self-driven power-frequency commutation bridge circuit for grid-connected inverter |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100774145B1 (en) * | 2007-04-18 | 2007-11-07 | 주식회사 큐리온 | Power converter having a self driven synchronous rectifier |
| CN102664551A (en) * | 2012-05-11 | 2012-09-12 | 德州三和电器有限公司 | Self-driven power frequency synchronous phase conversion full-bridge circuit |
| CN203537257U (en) * | 2013-09-26 | 2014-04-09 | 惠州三华工业有限公司 | Synchronous self-driven power-frequency commutation bridge circuit for grid-connected inverter |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116760275A (en) * | 2023-08-17 | 2023-09-15 | 成都吉瓦特科技有限公司 | Island-preventing circuit of miniature photovoltaic grid-connected inverter |
| CN116760275B (en) * | 2023-08-17 | 2023-11-03 | 成都吉瓦特科技有限公司 | Island-preventing circuit of miniature photovoltaic grid-connected inverter |
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| CN103532414B (en) | 2017-02-22 |
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