CN103513689A - Lower-power-consumption reference source circuit - Google Patents
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Abstract
The invention discloses a lower-power-consumption reference source circuit. The lower-power-consumption reference source circuit comprises a starting circuit unit, a current generation circuit unit and an output load circuit unit, wherein the starting circuit unit, the current generation circuit unit and the output load circuit unit are connected in sequence, the starting circuit unit is used for providing starting voltage, and preventing operation in a zero state area, the current generation circuit unit is used for generating microcurrent for the output load circuit unit, and reducing power consumption of the lower-power-consumption reference source circuit, and the output load circuit unit is used for achieving output of a zero-temperature coefficient and low-output voltage. The lower-power-consumption reference source circuit has the advantages of being low in power consumption, low in temperature coefficient, large in range of operating voltage and small in area.
Description
Technical field
The present invention relates to a kind of low-power consumption, low-temperature coefficient, compared with wide operating range and the little reference source circuit of area, more specifically, relate to a kind of low-power consumption benchmark primary circuit.
Background technology
Reference source circuit module is widely used in simulation and hybrid circuit, as A/D, D/A converter, and voltage tuning device, voltage table, the testing tool of reometer and biasing circuit.The reference signal of its output is stable, and with supply voltage, the variation of temperature and technique is irrelevant.At SOC(system on chip) in chip, the reference source circuit part that is absolutely necessary, a lot of modules of chip all need reference source that stable voltage or electric current is provided, so the key that has been designed to whole chip design of reference source.
During reference source circuit design, mainly consider following performance index: temperature coefficient, operating voltage range, Power Supply Rejection Ratio and power consumption.Temperature coefficient is lower is that the output voltage temperature influence of reference source circuit is less, and voltage is more stable.Larger working range can make reference source circuit more easily reach the output voltage values of target.In order to meet the requirement to power management chip low-power consumption now, reference source circuit design will reduce its working current as far as possible, thereby reduces its power consumption, makes battery service life become more permanent.
For traditional reference source circuit, normally utilize the current module of two different temperature coefficients to realize the Voltage-output of zero-temperature coefficient.Deviser will design a positive temperature coefficient (PTC) electric current (electric current increases with the increase of temperature) and a negative temperature parameter current (electric current reduces with the minimizing of temperature) is then superimposed by these two current modules, thereby reduce the impact of temperature on electric current, electric current finally can obtain the Voltage-output of low-temperature coefficient through resistance.
Fig. 1 is a traditional band-gap reference source circuit structure.The negative feedback forming by operational amplifier OP, make node voltage VA=VB, thereby the electric current that flows through M1 and M2 is equated, be I1=I2=I, voltage drop in resistance R 1 equals base-radio pressure reduction of Q1 and Q2, value is VBE=VTlnN, and VT represents the magnitude of voltage relevant to temperature variation, and N is the ratio of Q1 HeQ2 launch site area.In this circuit structure, benchmark output voltage is the base-emitter voltage VBE3 of bipolar transistor Q3 and the voltage drop sum in resistance R 2.And benchmark output voltage is the base-emitter voltage VBE3 of bipolar transistor Q3 and the voltage drop sum in resistance R 2, so there is the expression formula of VREF as follows:
Second in formula is directly proportional to absolute temperature, for compensating the negative temperature coefficient of VBE3.By selecting the ratio of suitable R1 and R2, the temperature coefficient of reference voltage can reach zero under a certain specified temp, and near this value, reference voltage variation with temperature is very little.
But there is certain deficiency in this structure.First, the temperature coefficient that this structure can arrive is higher, and generally, between 20-100ppm/ ° of C, secondly, the output voltage of this circuit is about 1.2 volts, is not suitable for the occasion of low pressure.This circuit uses triode and resistance, and the Area comparison of circuit is large.Again, the toggle speed of sort circuit is slow, even if the reference voltage of bandgap voltage reference can not turn-off when too high yet, can not realize the self-shield of circuit.And the Power Supply Rejection Ratio of circuit is conventionally not ideal enough, especially at power supply noise, compare under rugged environment, benchmark output voltage can be subject to larger noise.
Summary of the invention
For the problems referred to above, the object of the invention is to utilize the operating characteristic of CMOS Guan sub-threshold region, a kind of low in energy consumption, working range is wide, area is little and temperature coefficient is low CMOS low-power consumption reference source circuit is proposed.
To achieve these goals, technical scheme of the present invention is:
A reference source circuit, comprises and connects in turn start-up circuit unit, current generating circuit unit and output load circuit unit;
Described start-up circuit unit is used for providing trigger voltage, avoids being operated in zero condition district;
Described current generating circuit unit is used to output load circuit unit to produce micro-electric current, makes the power-dissipation-reduced of low-power consumption reference source circuit simultaneously;
Described output load circuit unit is used for realizing output zero-temperature coefficient and low output voltage.
Start-up circuit unit in circuit start for reference source circuit and other circuit units provide enabling signal, reference source circuit and other circuit units are broken away from and be operated in " degeneracy point ", and can after reference source circuit normal operation, can make start-up circuit turn-off to realize low-power consumption.
The output mechanism that above-mentioned output load circuit unit is comprised of two different door threshold voltage metal-oxide-semiconductors.
Preferably, described start-up circuit unit comprises metal-oxide-semiconductor MS0, MS1, MS2, MS3 and MC; Described MS1 and MS2 with current mirror to being connected, the source electrode of MS1 and the source ground of MS2, the drain electrode of MS2 is connected with the source electrode of MS3, the drain electrode of MS1 is connected with MS0 grid, and the grid of MS0 is connected with the grid of MC, and the drain electrode of MS0 is connected with the grid of MS3, the drain electrode of MC is connected with power supply with the drain electrode of MS3, MC drain electrode is connected with source electrode, and the drain electrode of MS0 and the source electrode of MS0 are respectively first, second enabling signal output terminal, to current generating circuit unit, provide enabling signal; Described MS3, MC are PMOS pipe.
The drain electrode of MC is connected with power supply, and MC grid, drain electrode and source electrode link together, thereby in start-up circuit, plays the area that electric capacity has reduced circuit structure.
Preferably, described current generating circuit unit comprises metal-oxide-semiconductor M1, M2, M3, PM1 and PM2, metal-oxide-semiconductor PM1 is connected the electric current of two branch roads is equated with current-mirror structure with PM2, the drain electrode of PM1 and the drain electrode of PM2 connect power supply, the source electrode of the grid of PM1, the grid of PM2 and PM2 is connected, the source electrode of PM2 is generation current output terminal, and is connected with the first enabling signal output terminal of start-up circuit unit; The source electrode of the grid of M1, the drain electrode of M2 and M3 is connected, and the source electrode of PM1, the grid of M3, the drain electrode of M3 and the grid of M2 are connected, and the grid of M2 is connected with the second enabling signal output terminal of start-up circuit unit.Current generating circuit unit has been used the MOS of one group of connection level structure, according to the voltage relationship of each MOS, determines the micro-electric current of output.According to the voltage-current relationship of M1, M2 and M3 tie point, can obtain the expression formula of electric current, this electric current is relevant with the breadth length ratio of M1, M2 and M3, by regulating its breadth length ratio can just obtain lower output current.
Current generating circuit unit is connected with described start-up circuit unit, to guarantee that circuit can normally start, after circuit normal operation, as feedback signal, start-up circuit unit is disconnected simultaneously, thereby minimizing power consumption, described start-up circuit unit when circuit start for reference source and chip and other circuit modules provide enabling signal, reference source circuit and other circuit units are broken away from and be operated in " degeneracy point ", and can after reference source circuit normal operation, make start-up circuit turn-off to realize low-power consumption.
Preferably, described output load circuit unit comprises metal-oxide-semiconductor M4, M5 and PM3, the grid of PM3 is as the input end of output load circuit unit, be connected with the first enabling signal output terminal of start-up circuit unit, the drain electrode of PM3 connects power supply, PM2 in PM3 and current generating circuit unit forms current mirror, and the current mirror that current generating circuit unit is produced is to output load circuit unit; The grid of the drain electrode of M4, the grid of M4 and M5 is connected, and the source electrode of M4 is connected with the drain electrode of M5, the source ground of M5, and M4 and M5 connection level is output load, the tie point of the source electrode of M4 and the drain electrode of M5 of take is output node VREF.
Whole low-power consumption reference source circuit has only been used metal-oxide-semiconductor not use electric capacity and resistance, thereby has reduced the area of circuit, thereby and circuit working in sub-threshold region, only produce less power consumption.
Preferably, the M4 in described output load circuit unit is nmvt3.3 pipe, has lower door threshold voltage, and M5 is n3.3 pipe, has higher door threshold voltage, and the door threshold value of M5 is greater than the door threshold value of M4, and output voltage values is about both differences.Because nmvt3.3 pipe has door threshold voltage and the temperature coefficient different from other pipes, thereby realize zero-temperature coefficient.
Preferably, in low-power consumption reference source circuit, the supply voltage of metal-oxide-semiconductor is 3.3V, thereby makes low-power consumption reference source circuit obtain wider working range.
Compared with prior art, beneficial effect of the present invention is: the present invention have simple in structure, realize the feature that area is little, temperature coefficient is low, low in energy consumption, output voltage is low and working range is wide.
Accompanying drawing explanation
Fig. 1 is traditional reference source circuit connection layout.
Fig. 2 is start-up circuit connection layout of the present invention.
Fig. 3 is output load circuit connection diagram of the present invention.
Fig. 4 is current generating circuit connection layout of the present invention.
Fig. 5 is reference source circuit connection layout of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be further described, but embodiments of the present invention are not limited to this.
The present invention is the operating characteristic of utilizing CMOS Guan sub-threshold region, has designed the reference source circuit that a low-power consumption, low-temperature coefficient and area are little.By utilizing the CMOS of different door threshold values to realize stable Voltage-output, realize the burning voltage output of low-temperature coefficient.Be operated in shown in the voltage-current characteristic following expression of CMOS pipe of sub-threshold region:
Wherein
v tH be a threshold voltage have positive temperature coefficient (PTC) and
v t for thermal voltage (
v t =k b t/q) there is negative temperature coefficient.
kfor the breadth length ratio of CMOS pipe,
i d its drain current,
ufor carrier mobility,
c oX for grid oxide layer electric capacity.
As Fig. 5, a kind of low-power consumption reference source circuit, comprises and connects in turn start-up circuit unit 1, current generating circuit unit 2 and output load circuit unit 3;
Zero condition district, for trigger voltage is provided, is avoided being operated in described start-up circuit unit 1, guarantees circuit normal operation;
Described current generating circuit unit 2 is used to output load circuit unit to produce micro-electric current, makes the power-dissipation-reduced of low-power consumption reference source circuit simultaneously;
Described output load circuit unit 3 utilizes the CMOS pipe nmvt of different door threshold values and realizes output zero-temperature coefficient and low output voltage.
In the present embodiment, CMOS pipes all in low-power consumption reference source circuit are all 3.3V, and the CMOS pipe of 3.3V has wider working range, thereby has increased the working range of reference source circuit structure.Reference source circuit structure has only been used CMOS components and parts, does not use electric capacity, resistance and triode, can reduce its impact of imbalance on circuit, and the circuit that can effectively reduce realize area.
As shown in Figure 2, start-up circuit unit 1 comprises metal-oxide-semiconductor MS0, MS1, MS2, MS3 and MC; Described MS1 and MS2 with current mirror to being connected, the source electrode of MS1 and the source ground of MS2, the drain electrode of MS2 is connected with the source electrode of MS3, the drain electrode of MS1 is connected with MS0 grid, and the grid of MS0 is connected with the grid of MC, and the drain electrode of MS0 is connected with the grid of MS3, the drain electrode of MC is connected with power supply with the drain electrode of MS3, MC drain electrode is connected with source electrode, and the drain electrode of MS0 and the source electrode of MS0 are respectively first, second enabling signal output terminal, to current generating circuit unit, provide enabling signal; Described MS3, MC are PMOS pipe.The drain electrode of MC is connected with power supply, and MC grid, drain electrode and source electrode link together, thereby in start-up circuit, plays the area that electric capacity has reduced circuit structure.
As shown in Figure 3, described output load circuit unit comprises metal-oxide-semiconductor M4, M5 and PM3, the grid of PM3 is as the input end of output load circuit unit, be connected with the first enabling signal output terminal of start-up circuit unit, the drain electrode of PM3 connects power supply, PM2 in PM3 and current generating circuit unit forms current mirror, and the current mirror that current generating circuit unit is produced is to output load circuit unit; The grid of the drain electrode of M4, the grid of M4 and M5 is connected, and the source electrode of M4 is connected with the drain electrode of M5, the source ground of M5, and M4 and M5 connection level is output load, the tie point of the source electrode of M4 and the drain electrode of M5 of take is output node V
ref.Have output voltage to express formula as follows:
Described metal-oxide-semiconductor M4 has been used nmvt3.3 pipe (Medium
v tH cMOS), its threshold voltage
v tH4 =487mV, than other CMOS door threshold voltage low (
v tH5 =695mV).Meanwhile, described nmvt3.3 pipe has from n3.3 manages different temperatures coefficient, the temperature coefficient that both differences can more effective reduction reference source circuit structure.According to metal-oxide-semiconductor, be operated in the voltage-current characteristic of sub-threshold region, can further obtain the expression formula of output voltage:
Road is by adjusting M as shown from the above formula
4and M
5breadth length ratio
kcan eliminate the impact of T on output voltage, thereby realize zero-temperature coefficient.
As shown in Figure 4, described current generating circuit unit comprises metal-oxide-semiconductor M1, M2, M3, PM1 and PM2, metal-oxide-semiconductor PM1 is connected the electric current of two branch roads is equated with current-mirror structure with PM2, the drain electrode of PM1 and the drain electrode of PM2 connect power supply, the source electrode of the grid of PM1, the grid of PM2 and PM2 is connected, the source electrode of PM2 is generation current output terminal, and is connected with the first enabling signal output terminal of start-up circuit unit; The source electrode of the grid of M1, the drain electrode of M2 and M3 is connected, the grid of M2 is connected with the second enabling signal output terminal of start-up circuit unit, the source electrode of PM1, the grid of M3, the drain electrode of M3 and the grid of M2 are connected, and obtain the voltage relationship formula of this tie point as the formula (4):
（5）
According to CMOS pipe, be operated in the voltage-current characteristic of subthreshold value, as the formula (2), can further arrive the electric current that circuit produces circuit
i 1 expression formula:
From above formula, by regulating the breadth length ratio of M1, M2 and M3
ksize, just can obtain small working current.。
Current generating circuit unit is connected with described start-up circuit unit, to guarantee that circuit can normally start, after circuit normal operation, as feedback signal, start-up circuit unit is disconnected simultaneously, thereby minimizing power consumption, the first enabling signal output terminal of start-up circuit unit is connected with described output load circuit unit, metal-oxide-semiconductor PM3 and PM2 form current mirror, by this current mirror output load circuit, obtain electric current I 3 proportional to I1, and this ratio is determined by the breadth length ratio of PM2 and PM3.
Above-described embodiments of the present invention, do not form limiting the scope of the present invention.Any modification of having done within spiritual principles of the present invention, be equal to and replace and improvement etc., within all should being included in claim protection domain of the present invention.
Claims (6)
1. a low-power consumption reference source circuit, is characterized in that, comprises and connects in turn start-up circuit unit, current generating circuit unit and output load circuit unit;
Described start-up circuit unit is used for providing trigger voltage, avoids being operated in zero condition district;
Described current generating circuit unit is used to output load circuit unit to produce micro-electric current, makes the power-dissipation-reduced of low-power consumption reference source circuit simultaneously;
Described output load circuit unit is used for realizing output zero-temperature coefficient and low output voltage.
2. low-power consumption reference source circuit according to claim 1, is characterized in that, described start-up circuit unit comprises metal-oxide-semiconductor MS0, MS1, MS2, MS3 and MC; Described MS1 and MS2 with current mirror to being connected, the source electrode of MS1 and the source ground of MS2, the drain electrode of MS2 is connected with the source electrode of MS3, the drain electrode of MS1 is connected with MS0 grid, and the grid of MS0 is connected with the grid of MC, and the drain electrode of MS0 is connected with the grid of MS3, the drain electrode of MC is connected with power supply with the drain electrode of MS3, MC drain electrode is connected with source electrode, and the drain electrode of MS0 and the source electrode of MS0 are respectively first, second enabling signal output terminal, to current generating circuit unit, provide enabling signal; Described MS3, MC are PMOS pipe.
3. low-power consumption reference source circuit according to claim 1, it is characterized in that, described current generating circuit unit comprises metal-oxide-semiconductor M1, M2, M3, PM1 and PM2, metal-oxide-semiconductor PM1 is connected with current-mirror structure with PM2, the drain electrode of PM1 and the drain electrode of PM2 connect power supply, the source electrode of the grid of PM1, the grid of PM2 and PM2 is connected, and the source electrode of PM2 is generation current output terminal, and is connected with the first enabling signal output terminal of start-up circuit unit; The source electrode of the grid of M1, the drain electrode of M2 and M3 is connected, and the source electrode of PM1, the grid of M3, the drain electrode of M3 and the grid of M2 are connected, and the grid of M2 is connected with the second enabling signal output terminal of start-up circuit unit.
4. low-power consumption reference source circuit according to claim 1, it is characterized in that, described output load circuit unit comprises metal-oxide-semiconductor M4, M5 and PM3, the grid of PM3 is as the input end of output load circuit unit, be connected with the first enabling signal output terminal of start-up circuit unit, the drain electrode of PM3 connects power supply, the grid of the drain electrode of M4, the grid of M4 and M5 is connected, the source electrode of M4 is connected with the drain electrode of M5, the source ground of M5, M4 and M5 connection level is output load, and the tie point of the source electrode of M4 and the drain electrode of M5 of take is output node VREF.
5. low-power consumption reference source circuit according to claim 1, is characterized in that, the M4 in described output load circuit unit is nmvt3.3 pipe, and M5 is n3.3 pipe, and the door threshold value of M5 is greater than the door threshold value of M4.
6. the circuit of low-power consumption reference source according to claim 1, is characterized in that, in low-power consumption reference source circuit, the supply voltage of metal-oxide-semiconductor is 3.3V.
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| CN104656732A (en) * | 2014-12-31 | 2015-05-27 | 格科微电子（上海）有限公司 | Voltage reference circuit |
| CN105676938A (en) * | 2016-03-04 | 2016-06-15 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Voltage reference source circuit with ultra-low power consumption and high power supply rejection ratio |
| CN105739586A (en) * | 2016-04-01 | 2016-07-06 | 深圳还是威健康科技有限公司 | Current reference source circuit |
| CN105974989A (en) * | 2016-06-15 | 2016-09-28 | 中山大学 | Low-power-consumption full-CMOS reference source circuit based on subthreshold value |
| CN106484018A (en) * | 2016-09-29 | 2017-03-08 | 广州智慧城市发展研究院 | A kind of reference voltage source circuit system and supply unit |
| CN106855732A (en) * | 2016-12-26 | 2017-06-16 | 中山大学 | A kind of super low-power consumption reference voltage source circuit system |
| CN107272819A (en) * | 2017-08-09 | 2017-10-20 | 电子科技大学 | A kind of low-power consumption Low Drift Temperature CMOS subthreshold value reference circuits |
| CN107291146A (en) * | 2017-08-16 | 2017-10-24 | 何金昌 | A kind of band-gap voltage source and chip system applied to microchip |
| CN107450652A (en) * | 2017-08-02 | 2017-12-08 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of voltage reference source circuit |
| CN108205353A (en) * | 2018-01-09 | 2018-06-26 | 电子科技大学 | A kind of CMOS subthreshold values reference voltage source |
| CN109343652A (en) * | 2018-10-12 | 2019-02-15 | 中国电子科技集团公司第七研究所 | It is a kind of that the reference voltage source of two output voltages is provided |
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| CN111290459A (en) * | 2020-02-11 | 2020-06-16 | 浙江省北大信息技术高等研究院 | Voltage reference source circuit |
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| CN117074767A (en) * | 2023-10-18 | 2023-11-17 | 苏州锴威特半导体股份有限公司 | Voltage detection circuit |
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| CN104656732A (en) * | 2014-12-31 | 2015-05-27 | 格科微电子（上海）有限公司 | Voltage reference circuit |
| CN105676938A (en) * | 2016-03-04 | 2016-06-15 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Voltage reference source circuit with ultra-low power consumption and high power supply rejection ratio |
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| CN105974989A (en) * | 2016-06-15 | 2016-09-28 | 中山大学 | Low-power-consumption full-CMOS reference source circuit based on subthreshold value |
| CN106484018A (en) * | 2016-09-29 | 2017-03-08 | 广州智慧城市发展研究院 | A kind of reference voltage source circuit system and supply unit |
| CN106855732A (en) * | 2016-12-26 | 2017-06-16 | 中山大学 | A kind of super low-power consumption reference voltage source circuit system |
| CN106855732B (en) * | 2016-12-26 | 2018-03-16 | 中山大学 | A kind of super low-power consumption reference voltage source circuit system |
| CN107450652A (en) * | 2017-08-02 | 2017-12-08 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of voltage reference source circuit |
| CN107272819A (en) * | 2017-08-09 | 2017-10-20 | 电子科技大学 | A kind of low-power consumption Low Drift Temperature CMOS subthreshold value reference circuits |
| CN107291146A (en) * | 2017-08-16 | 2017-10-24 | 何金昌 | A kind of band-gap voltage source and chip system applied to microchip |
| CN108205353A (en) * | 2018-01-09 | 2018-06-26 | 电子科技大学 | A kind of CMOS subthreshold values reference voltage source |
| CN109343652A (en) * | 2018-10-12 | 2019-02-15 | 中国电子科技集团公司第七研究所 | It is a kind of that the reference voltage source of two output voltages is provided |
| CN110377090A (en) * | 2019-07-29 | 2019-10-25 | 北方民族大学 | A kind of reference voltage source circuit |
| CN110794909A (en) * | 2019-11-05 | 2020-02-14 | 安徽大学 | Ultra-low power consumption voltage reference source circuit with adjustable output voltage |
| CN110794909B (en) * | 2019-11-05 | 2021-06-04 | 安徽大学 | Ultra-low power consumption voltage reference source circuit with adjustable output voltage |
| CN111290459A (en) * | 2020-02-11 | 2020-06-16 | 浙江省北大信息技术高等研究院 | Voltage reference source circuit |
| CN111290459B (en) * | 2020-02-11 | 2021-10-22 | 杭州未名信科科技有限公司 | Voltage reference source circuit |
| CN112416044A (en) * | 2020-12-03 | 2021-02-26 | 电子科技大学 | Voltage reference circuit with high power supply rejection ratio |
| CN117074767A (en) * | 2023-10-18 | 2023-11-17 | 苏州锴威特半导体股份有限公司 | Voltage detection circuit |
| CN117074767B (en) * | 2023-10-18 | 2024-01-30 | 苏州锴威特半导体股份有限公司 | Voltage detection circuit |
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| CN103513689B (en) | 2015-08-19 |
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Effective date of registration: 20151203 Address after: 510275 Xingang West Road, Guangdong, No. 135 Zhongshan University, Patentee after: SUN YAT-SEN University Patentee after: SYSU HUADU INDUSTRIAL SCIENCE AND TECHNOLOGY INSTITUTE Address before: 510275 Xingang West Road, Guangdong, No. 135 Zhongshan University, Patentee before: Sun Yat-sen University Patentee before: Sysung Electronics and Telecomm Research Institute |
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