CN103489909A - IGBT terminal structure with hole recombination layer and method for preparing same - Google Patents
IGBT terminal structure with hole recombination layer and method for preparing same Download PDFInfo
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- CN103489909A CN103489909A CN201310422648.3A CN201310422648A CN103489909A CN 103489909 A CN103489909 A CN 103489909A CN 201310422648 A CN201310422648 A CN 201310422648A CN 103489909 A CN103489909 A CN 103489909A
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- 230000006798 recombination Effects 0.000 title abstract 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 17
- -1 carbon ions Chemical class 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 11
- 229910052796 boron Inorganic materials 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 11
- 239000001301 oxygen Substances 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 10
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 238000002513 implantation Methods 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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Abstract
The invention provides an IGBT terminal structure with a hole recombination layer and a method for preparing the IGBT terminal structure with the hole recombination layer, and belongs to the technical field of power semiconductor devices. According to the IGBT terminal structure, the hole recombination layer is introduced into a P type equipotential ring of a conventional IGBT terminal structure, wherein annealing process is conducted on carbon ions and oxygen ions under the temperature condition ranging from 400 DEG C to 550 DEG C to form the hole recombination layer, and the carbon ions and the oxygen ions are introduced into the P type equipotential ring. Due to the fact that the hole recombination layer is introduced into the P type equipotential ring, the hole current density in the position of the equipotential ring can be effectively lowered, the current concentration phenomenon produced when the devices are turned off is weakened, dynamic avalanche breakdown and thermal breakdown can be restrained, and the reliability of the IGBT device is improved. Due to the fact that the hole recombination layer is only introduced to the inner portion of the equipotential ring on a terminal of the device, the conductance modulation effect in a drifting region is not influenced when the device is in forward connection, and voltage reduction caused by forward connection can not be changed. According to the method, carbon ion injection and oxygen ion injection can be conducted by only adding a mask plate, and no excessive additional cost can be increased.
Description
Technical field
The invention belongs to the power semiconductor technical field, relate to insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT), be specifically related to the IGBT terminal structure.
Background technology
IGBT is the compound device of a kind of voltage-controlled MOS/BJT.Structure, the structure of IGBT is very similar to VDMOS, just by the N of VDMOS
+substrate is adjusted into P
+substrate, but the conductivity modulation effect introduced has overcome the intrinsic conducting resistance of VDMOS itself and the contradiction of puncture voltage, thereby makes IGBT have the major advantage of bipolar power transistor and power MOSFET simultaneously: input impedance is high, conduction voltage drop is low, current capacity is large, switching speed is fast etc.Just because of the IGBT uniqueness, performance advantage that do not replace, it just is widely used from releasing practical product at numerous areas, such as: new energy technology, take the fields such as advanced transport facility, hybrid vehicle, office automation and household electrical appliance that motor-car, high ferro be representative.
During the IGBT forward conduction, positive grid voltage makes raceway groove open, the emitter electronics flows to drift region through raceway groove, and due to collector electrode forward bias and electroneutral requirement, the electronics that Bing He drift region, drift region is injected from collector electrode in a large amount of holes forms electricity and leads modulation.Conductivity modulation effect during just because of the IGBT forward conduction makes IGBT have low forward conduction voltage drop, high on state current, low-loss advantage.Yet in the IGBT turn off process, after grid voltage is reduced to lower than threshold voltage, channel cutoff, the vanishing of emitter electronic current.In the application circuit of the inductive load of extensive use, because inductive current can not suddenly change, that is: the electric current that flows through IGBT can not suddenly change.Therefore, the electric current of all IGBT of flowing through must inject the hole current that the hole of drift region forms by collector electrode provides.Now, terminal area (as shown in Figure 1) for the IGBT device, a large amount of holes in drift region can not directly be taken away from the floating empty field limiting ring of terminal, but concentrate at the equipotential ring place of terminal, thereby the local accumulation effect (as shown in Figure 2) that forms hole current at the equipotential ring place of terminal causes local high-voltage great-current, device temperature is sharply raise, the dynamic avalanche that causes device punctures and thermal breakdown, and device is burnt, and causes the shutoff of device to be lost efficacy.
Summary of the invention
For the electric current that reduces IGBT device terminal equipotential ring place gathers effect, promote the reliability of IGBT device, the invention provides a kind of IGBT terminal structure with hole-recombination layer.This IGBT terminal structure is introduced the hole-recombination layer in the terminal equipotential ring, can effectively reduce the hole current density at terminal equipotential ring place, weaken corresponding electric current concentration phenomenon, suppress, because the concentrated dynamic avalanche caused of electric current punctures and thermal breakdown, to improve the reliability of IGBT device.The introducing of hole-recombination layer is only in the equipotential ring inside of device terminal simultaneously, and during forward conduction, the conductivity modulation effect of drift region is unaffected, so forward conduction voltage drop can not change.The present invention provides the preparation method of the IGBT terminal structure with hole-recombination layer simultaneously.
Technical solution of the present invention is as follows:
IGBT terminal structure with hole-recombination layer, its structure as shown in Figure 3, comprises the IGBT terminal structure be connected with the IGBT active area, described IGBT terminal structure comprises N
-drift region 7, N-type resilient coating 8, P
+collector region 9, metal collector 10, P type equipotential ring 12, P type field limiting ring 14 and N
+cut-off ring 20; Wherein N-type resilient coating 8 is positioned at N
-drift region 7 and P
+between collector region 9, P
+collector region 9 is between N-type resilient coating 8 and metal collector 10; Described P type equipotential ring 12 is positioned at the N near the IGBT active area
-in drift region 7, the P that there is equipotential ring in P type equipotential ring 12
+ contact zone 11, the P of described equipotential ring
+contact zone 11 is realized being connected with the equipotential of metal emitting in the IGBT active area by metal connecting line; Described N
+cut-off ring 20 N that are positioned at away from the IGBT active area
-in drift region 7; P type equipotential ring 12 and N
+n between cut-off ring 20
-there are some P type field limiting rings 14 in drift region 7; P type equipotential ring 12, P type field limiting ring 14, N
+cut-off ring 20 and N
-the surface of drift region 7 has field oxide 16, field oxide 16 surfaces and P type equipotential ring 12, P type field limiting ring 14 and N
+the position of cut-off ring 20 correspondences has respectively Metal field plate 13,15,18 and 19; Also have hole-recombination layer 21 in described P type equipotential ring 12, described hole-recombination layer 21 is formed by carbon (C) ion and the annealing in process of oxygen (O) ion under 400～550 ℃ of temperature conditions that are injected in P type equipotential ring 12.
The present invention provides the preparation method of the IGBT terminal structure with hole-recombination layer simultaneously, comprises following processing step: terminal N in the IGBT manufacturing process
-in drift region 7, boron injects and pushes away trap and forms respectively P type equipotential ring 12, P type field limiting ring 14 and N
+after cut-off ring 20, carry out carbon (C) ion and oxygen (O) Implantation in P type equipotential ring 12, then the annealing in process under 400～550 ℃ of temperature conditions forms the hole-recombination layer 21 in P type equipotential ring 12.After hole-recombination layer 21 in forming P type equipotential ring 12, (include the photoetching in source region and the etching of grid groove, the growth of gate oxide, N carrying out subsequent technique
+the deposit of polysilicon and photoetching, P
-the autoregistration boron of base injects and pushes away trap, N
+the arsenic of emitter region injects and pushes away trap, anti-breech lock P
+the boron of layer injects, the deposit of BPSG and backflow, and the photoetching of contact hole, boron inject and annealing, the deposit of front aluminium lamination and photoetching, thinning back side, back face metalization etc.）
Aspect the concrete manufacture craft of hole-recombination layer, with 80～120KeV energy, 1E15～4E15cm
-2dosage carries out the boron injection, after forming equipotential ring and field limiting ring, under the condition of placing at silicon wafer horizontal, respectively to the inner Implantation carbon ion of equipotential ring and oxonium ion (as shown in Figure 4), energy and dosage that wherein carbon ion injects are respectively: 40～60KeV, 1E12～3E12cm
-2, energy and the dosage of O +ion implanted are respectively: 50～70KeV, 2E12～6E12cm
-2.Then under 400～550 ℃ of conditions, annealed.
About the concrete Implantation Energy of the ion of carbon, oxygen and dosage, annealing temperature, need require according to the actual design of IGBT device carry out reasonably optimizing and choosing, to reaching optimal effect.
Operation principle of the present invention:
For traditional IGBT terminal structure (as shown in Figure 1), when IGBT turn-offs, a large amount of holes in drift region can not directly be taken away from the floating empty field limiting ring of terminal, but concentrate at the equipotential ring place of terminal, thereby the local accumulation effect (as shown in Figure 2) that forms hole current at the equipotential ring place of terminal causes local high-voltage great-current, device temperature is sharply raise, the dynamic avalanche that causes device punctures and thermal breakdown, and device is burnt, and causes the shutoff of device to be lost efficacy.IGBT terminal structure with hole-recombination layer provided by the invention, IGBT terminal structure based on traditional, after forming equipotential ring and field limiting ring, under the condition of placing at silicon wafer horizontal, respectively to the inner Implantation of C Ion of equipotential ring, oxygen (as shown in Figure 4), then carry out process annealing.Carbon, oxygen as non-conductive impurity are coupled between silicon crystal lattice, form the hole-recombination layer, are the part of numbering 21 indications in Fig. 3.In the IGBT turn off process, in drift region a large amount of holes of storage due to can not be directly from floating empty field limiting ring extraction, will concentrate at the equipotential ring place, and from the P of equipotential ring
+draw contact zone, thereby form hole current, gathers.A large amount of holes that the equipotential ring place gathers are extracted and pass through in the process of hole-recombination layer, part hole is by compound disappearance, thereby effectively reduce hole current density herein, weaken corresponding electric current concentration phenomenon, inhibition, because the concentrated dynamic avalanche caused of electric current punctures and thermal breakdown, has improved the reliability of IGBT device.
In sum, the IGBT terminal structure with hole-recombination layer provided by the invention.This IGBT terminal structure is introduced the hole-recombination layer in the terminal equipotential ring, can effectively reduce the hole current density at terminal equipotential ring place, weaken corresponding electric current concentration phenomenon, suppress, because the concentrated dynamic avalanche caused of electric current punctures and thermal breakdown, to improve the reliability of IGBT device.The introducing of hole-recombination layer is only in the equipotential ring inside of device terminal simultaneously, and during forward conduction, the conductivity modulation effect of drift region is unaffected, so forward conduction voltage drop can not change.In addition, manufacture method corresponding to IGBT terminal structure with hole-recombination layer that the present invention proposes, as long as increase the Implantation that a mask plate carries out carbon, oxygen, under the fringe cost condition of bringing at the newly-increased processing step of reduce, can obtain best IGBT device reliability improvement effect.
The accompanying drawing explanation
Fig. 1 is conventional I GBT terminal structure schematic diagram.
Fig. 2 is the hole current distribution schematic diagram of conventional I GBT terminal structure.
Fig. 3 is a kind of IGBT terminal structure schematic diagram proposed.
Fig. 4 is the Implantation hole-recombination layer schematic diagram of a kind of IGBT terminal structure of proposition.
In Fig. 1 to Fig. 4: comprise that 1 for grid, 2 is emitter, and 3 is N
+district, 4 is P
+district, 5 is P
-base, 6 is N
+polysilicon, 7 is N
-drift region, 8 is the N-type resilient coating, 9 is P
+collector region, 10 is metal collector, 11 P that are equipotential ring
+contact zone, 12 is P type equipotential ring, and 14 is P type field limiting ring, and 16 is field oxide, and 13,15,18,19 is Metal field plate, 20 is N
+the cut-off ring, 21 is the hole-recombination layer, 22,23 is the trap oxide layer.
Embodiment
IGBT terminal structure with hole-recombination layer, its structure as shown in Figure 3, comprises the IGBT terminal structure be connected with the IGBT active area, described IGBT terminal structure comprises N
-drift region 7, N-type resilient coating 8, P
+collector region 9, metal collector 10, P type equipotential ring 12, P type field limiting ring 14 and N
+cut-off ring 20; Wherein N-type resilient coating 8 is positioned at N
-drift region 7 and P
+between collector region 9, P
+collector region 9 is between N-type resilient coating 8 and metal collector 10; Described P type equipotential ring 12 is positioned at the N near the IGBT active area
-in drift region 7, the P that there is equipotential ring in P type equipotential ring 12
+ contact zone 11, the P of described equipotential ring
+contact zone 11 is realized being connected with the equipotential of metal emitting in the IGBT active area by metal connecting line; Described N
+cut-off ring 20 N that are positioned at away from the IGBT active area
-in drift region 7; P type equipotential ring 12 and N
+n between cut-off ring 20
-there are some P type field limiting rings 14 in drift region 7; P type equipotential ring 12, P type field limiting ring 14, N
+cut-off ring 20 and N
-the surface of drift region 7 has field oxide 16, field oxide 16 surfaces and P type equipotential ring 12, P type field limiting ring 14 and N
+the position of cut-off ring 20 correspondences has respectively Metal field plate 13,15,18 and 19; Also have hole-recombination layer 21 in described P type equipotential ring 12, described hole-recombination layer 21 is formed by carbon (C) ion and the annealing in process of oxygen (O) ion under 400～550 ℃ of temperature conditions that are injected in P type equipotential ring 12.
The present invention provides the preparation method of the IGBT terminal structure with hole-recombination layer simultaneously, comprises following processing step: terminal N in the IGBT manufacturing process
-in drift region 7, boron injects and pushes away trap and forms respectively P type equipotential ring 12, P type field limiting ring 14 and N
+after cut-off ring 20, carry out carbon (C) ion and oxygen (O) Implantation in P type equipotential ring 12, then the annealing in process under 400～550 ℃ of temperature conditions forms the hole-recombination layer 21 in P type equipotential ring 12.After hole-recombination layer 21 in forming P type equipotential ring 12, (include the photoetching in source region and the etching of grid groove, the growth of gate oxide, N carrying out subsequent technique
+the deposit of polysilicon and photoetching, P
-the autoregistration boron of base injects and pushes away trap, N
+the arsenic of emitter region injects and pushes away trap, anti-breech lock P
+the boron of layer injects, the deposit of BPSG and backflow, and the photoetching of contact hole, boron inject and annealing, the deposit of front aluminium lamination and photoetching, thinning back side, back face metalization etc.）
Aspect the concrete manufacture craft of hole-recombination layer, with 80～120KeV energy, 1E15～4E15cm
-2dosage carries out the boron injection, after forming equipotential ring and field limiting ring, under the condition of placing at silicon wafer horizontal, respectively to the inner Implantation carbon ion of equipotential ring and oxonium ion (as shown in Figure 4), energy and dosage that wherein carbon ion injects are respectively: 40～60KeV, 1E12～3E12cm
-2, energy and the dosage of O +ion implanted are respectively: 50～70KeV, 2E12～6E12cm
-2.Then under 400～550 ℃ of conditions, annealed.
Claims (3)
1. the IGBT terminal structure that there is the hole-recombination layer, its structure comprises the IGBT terminal structure be connected with the IGBT active area, described IGBT terminal structure comprises N
-drift region (7), N-type resilient coating (8), P
+collector region (9), metal collector (10), P type equipotential ring (12), P type field limiting ring (14) and N
+cut-off ring (20); Wherein N-type resilient coating (8) is positioned at N
-drift region (7) and P
+between collector region (9), P
+collector region (9) is positioned between N-type resilient coating (8) and metal collector (10); Described P type equipotential ring (12) is positioned at the N near the IGBT active area
-in drift region (7), the P that there is equipotential ring in P type equipotential ring (12)
+contact zone (11), the P of described equipotential ring
+contact zone (11) is realized being connected with the equipotential of metal emitting in the IGBT active area by metal connecting line; Described N
+cut-off ring (20) is positioned at the N away from the IGBT active area
-in drift region (7); P type equipotential ring (12) and N
+n between cut-off ring (20)
-there are some P type field limiting rings (14) in drift region (7); P type equipotential ring (12), P type field limiting ring (14), N
+cut-off ring (20) and N
-the surface of drift region (7) has field oxide (16), field oxide (16) surface and P type equipotential ring (12), P type field limiting ring (14) and N
+the position that cut-off ring (20) is corresponding has respectively Metal field plate (13,15,18 and 19); Also have hole-recombination layer (21) in described P type equipotential ring (12), described hole-recombination layer (21) is formed by the carbon ion and the annealing in process of oxonium ion under 400～550 ℃ of temperature conditions that are injected in P type equipotential ring (12).
2. there is the preparation method of the IGBT terminal structure of hole-recombination layer, comprise following processing step: terminal N in the IGBT manufacturing process
-in drift region (7), boron injects and pushes away trap and forms respectively P type equipotential ring (12), P type field limiting ring (14) and N
+after cut-off ring (20), in P type equipotential ring (12), carry out carbon ion and O +ion implanted, then the annealing in process under 400～550 ℃ of temperature conditions forms the hole-recombination layer (21) in P type equipotential ring (12).
3. the preparation method with IGBT terminal structure of hole-recombination layer according to claim 2, is characterized in that, energy and dosage that described carbon ion injects are respectively: 40～60KeV, 1E12～3E12cm
-2, energy and the dosage of described O +ion implanted are respectively: 50～70KeV, 2E12～6E12cm
-2.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113314613A (en) * | 2021-05-31 | 2021-08-27 | 电子科技大学 | Silicon carbide MOSFET device with avalanche charge transition buffer layer and preparation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020175351A1 (en) * | 2001-04-11 | 2002-11-28 | Baliga Bantval Jayant | Power semiconductor devices having retrograded-doped transition regions that enhance breakdown voltage characteristics and methods of forming same |
| CN102832240A (en) * | 2012-09-11 | 2012-12-19 | 电子科技大学 | Insulated gate bipolar transistor with dielectric layer at collector terminal |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020175351A1 (en) * | 2001-04-11 | 2002-11-28 | Baliga Bantval Jayant | Power semiconductor devices having retrograded-doped transition regions that enhance breakdown voltage characteristics and methods of forming same |
| CN102832240A (en) * | 2012-09-11 | 2012-12-19 | 电子科技大学 | Insulated gate bipolar transistor with dielectric layer at collector terminal |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113314613A (en) * | 2021-05-31 | 2021-08-27 | 电子科技大学 | Silicon carbide MOSFET device with avalanche charge transition buffer layer and preparation method |
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