CN103464418A - 一种半导体硅片脱胶工艺 - Google Patents
一种半导体硅片脱胶工艺 Download PDFInfo
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- CN103464418A CN103464418A CN2013104319666A CN201310431966A CN103464418A CN 103464418 A CN103464418 A CN 103464418A CN 2013104319666 A CN2013104319666 A CN 2013104319666A CN 201310431966 A CN201310431966 A CN 201310431966A CN 103464418 A CN103464418 A CN 103464418A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 57
- 239000010703 silicon Substances 0.000 title claims abstract description 57
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- 238000000034 method Methods 0.000 title abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 52
- 230000005587 bubbling Effects 0.000 claims abstract description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 16
- 239000004570 mortar (masonry) Substances 0.000 claims abstract description 6
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- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 235000015165 citric acid Nutrition 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
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- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 9
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- 235000020679 tap water Nutrition 0.000 abstract 1
- 230000002950 deficient Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- -1 be soaked 400s Substances 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
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CN201310431966.6A CN103464418B (zh) | 2013-09-18 | 2013-09-18 | 一种半导体硅片脱胶工艺 |
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CN201310431966.6A CN103464418B (zh) | 2013-09-18 | 2013-09-18 | 一种半导体硅片脱胶工艺 |
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CN103464418A true CN103464418A (zh) | 2013-12-25 |
CN103464418B CN103464418B (zh) | 2015-10-07 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104668231A (zh) * | 2015-02-13 | 2015-06-03 | 江西赛维Ldk太阳能高科技有限公司 | 一种线切割用托板的脱胶方法及托板脱胶溶液 |
CN105855213A (zh) * | 2016-03-31 | 2016-08-17 | 苏州晶樱光电科技有限公司 | 硅晶片脱胶工艺 |
CN106409972A (zh) * | 2016-09-27 | 2017-02-15 | 张家港市港威超声电子有限公司 | 硅片多线切割后的脱胶工装 |
CN106816497A (zh) * | 2017-02-22 | 2017-06-09 | 邢台晶龙电子材料有限公司 | 一种硅片脱胶清洗方法及装置 |
CN107473331A (zh) * | 2017-08-17 | 2017-12-15 | 隆基绿能科技股份有限公司 | 浓水处理方法及硅片脱胶方法 |
CN108372149A (zh) * | 2018-03-10 | 2018-08-07 | 中锗科技有限公司 | 一种线切割太阳能锗片的脱胶方法 |
CN108711547A (zh) * | 2018-05-03 | 2018-10-26 | 浙江海顺新能源有限公司 | 一种硅片脱胶工艺 |
CN109979799A (zh) * | 2017-12-27 | 2019-07-05 | 东莞新科技术研究开发有限公司 | 半导体晶片的脱胶方法 |
CN111921945A (zh) * | 2020-07-14 | 2020-11-13 | 海盐得胜化工设备有限公司 | 一种多晶硅规整填料清洗工艺 |
CN114247682A (zh) * | 2021-11-25 | 2022-03-29 | 安徽微芯长江半导体材料有限公司 | 一种碳化硅晶片专用切后清洗装置及清洗方法 |
Citations (10)
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JP2002009033A (ja) * | 2000-06-19 | 2002-01-11 | Super Silicon Kenkyusho:Kk | 半導体ウエハ用洗浄装置 |
US20030110803A1 (en) * | 2001-09-04 | 2003-06-19 | Nippon Sheet Glass Co., Ltd. | Method of manufacturing glass substrate for magnetic disks, and glass substrate for magnetic disks |
CN101590476A (zh) * | 2009-06-10 | 2009-12-02 | 嘉兴五神光电材料有限公司 | 一种单晶硅片的清洗方法 |
WO2009158378A2 (en) * | 2008-06-25 | 2009-12-30 | Applied Materials, Inc. | Dual chamber megasonic cleaner |
CN101817006A (zh) * | 2010-03-22 | 2010-09-01 | 浙江矽盛电子有限公司 | 一种太阳能硅片的表面清洗方法 |
CN201820777U (zh) * | 2010-09-02 | 2011-05-04 | 董维来 | 太阳能硅片湿法自动分片装置 |
CN102489463A (zh) * | 2011-12-29 | 2012-06-13 | 北京泰拓精密清洗设备有限公司 | 模块化清洗*** |
CN102698989A (zh) * | 2012-06-11 | 2012-10-03 | 协鑫阿特斯(苏州)光伏科技有限公司 | 硅片预清洗方法 |
CN102723403A (zh) * | 2012-06-25 | 2012-10-10 | 江苏协鑫硅材料科技发展有限公司 | 籽晶脱胶工艺 |
CN102909187A (zh) * | 2011-08-01 | 2013-02-06 | 苏州东泰太阳能科技有限公司 | 一种清洗机 |
-
2013
- 2013-09-18 CN CN201310431966.6A patent/CN103464418B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002009033A (ja) * | 2000-06-19 | 2002-01-11 | Super Silicon Kenkyusho:Kk | 半導体ウエハ用洗浄装置 |
US20030110803A1 (en) * | 2001-09-04 | 2003-06-19 | Nippon Sheet Glass Co., Ltd. | Method of manufacturing glass substrate for magnetic disks, and glass substrate for magnetic disks |
WO2009158378A2 (en) * | 2008-06-25 | 2009-12-30 | Applied Materials, Inc. | Dual chamber megasonic cleaner |
CN101590476A (zh) * | 2009-06-10 | 2009-12-02 | 嘉兴五神光电材料有限公司 | 一种单晶硅片的清洗方法 |
CN101817006A (zh) * | 2010-03-22 | 2010-09-01 | 浙江矽盛电子有限公司 | 一种太阳能硅片的表面清洗方法 |
CN201820777U (zh) * | 2010-09-02 | 2011-05-04 | 董维来 | 太阳能硅片湿法自动分片装置 |
CN102909187A (zh) * | 2011-08-01 | 2013-02-06 | 苏州东泰太阳能科技有限公司 | 一种清洗机 |
CN102489463A (zh) * | 2011-12-29 | 2012-06-13 | 北京泰拓精密清洗设备有限公司 | 模块化清洗*** |
CN102698989A (zh) * | 2012-06-11 | 2012-10-03 | 协鑫阿特斯(苏州)光伏科技有限公司 | 硅片预清洗方法 |
CN102723403A (zh) * | 2012-06-25 | 2012-10-10 | 江苏协鑫硅材料科技发展有限公司 | 籽晶脱胶工艺 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104668231A (zh) * | 2015-02-13 | 2015-06-03 | 江西赛维Ldk太阳能高科技有限公司 | 一种线切割用托板的脱胶方法及托板脱胶溶液 |
CN105855213A (zh) * | 2016-03-31 | 2016-08-17 | 苏州晶樱光电科技有限公司 | 硅晶片脱胶工艺 |
CN106409972A (zh) * | 2016-09-27 | 2017-02-15 | 张家港市港威超声电子有限公司 | 硅片多线切割后的脱胶工装 |
CN106816497A (zh) * | 2017-02-22 | 2017-06-09 | 邢台晶龙电子材料有限公司 | 一种硅片脱胶清洗方法及装置 |
CN107473331A (zh) * | 2017-08-17 | 2017-12-15 | 隆基绿能科技股份有限公司 | 浓水处理方法及硅片脱胶方法 |
CN107473331B (zh) * | 2017-08-17 | 2021-03-09 | 隆基绿能科技股份有限公司 | 浓水处理方法及硅片脱胶方法 |
CN109979799A (zh) * | 2017-12-27 | 2019-07-05 | 东莞新科技术研究开发有限公司 | 半导体晶片的脱胶方法 |
CN108372149A (zh) * | 2018-03-10 | 2018-08-07 | 中锗科技有限公司 | 一种线切割太阳能锗片的脱胶方法 |
CN108711547A (zh) * | 2018-05-03 | 2018-10-26 | 浙江海顺新能源有限公司 | 一种硅片脱胶工艺 |
CN108711547B (zh) * | 2018-05-03 | 2020-09-29 | 浙江海顺新能源有限公司 | 一种硅片脱胶工艺 |
CN111921945A (zh) * | 2020-07-14 | 2020-11-13 | 海盐得胜化工设备有限公司 | 一种多晶硅规整填料清洗工艺 |
CN114247682A (zh) * | 2021-11-25 | 2022-03-29 | 安徽微芯长江半导体材料有限公司 | 一种碳化硅晶片专用切后清洗装置及清洗方法 |
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CN103464418B (zh) | 2015-10-07 |
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Effective date of registration: 20181224 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20191224 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |