CN103456719A - Electronic device radiation-resistant reinforcing packaging structure - Google Patents
Electronic device radiation-resistant reinforcing packaging structure Download PDFInfo
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- CN103456719A CN103456719A CN2012101772541A CN201210177254A CN103456719A CN 103456719 A CN103456719 A CN 103456719A CN 2012101772541 A CN2012101772541 A CN 2012101772541A CN 201210177254 A CN201210177254 A CN 201210177254A CN 103456719 A CN103456719 A CN 103456719A
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Abstract
The invention discloses an electronic device radiation-resistant reinforcing packaging structure. The electronic device radiation-resistant reinforcing packaging structure comprises a bismaleimide base body containing lead, a light metal film and a heavy metal film. The light metal film is located on the bimaleimide base body containing the lead, and the heavy metal film is located on the light metal film. Due to the fact that the electronic device radiation-resistant reinforcing packaging structure comprises the light metal film and the heavy metal film, the electronic device radiation-resistant reinforcing packaging structure is good in radiation-resistant performance and simple in technology.
Description
Technical field
The present invention relates to electronic device radioresistance technology, relate in particular to electronic device radiation hardening encapsulating structure.
Background technology
In the terrestrial space radiation environment, (overhead 80～6500km) exists great radiation, and they are mainly from radiation belt of the earth particle, solar rays and cosmic ray.What for the spacecraft around earth operation, threaten maximum is the inside and outside Van Allen belt that is positioned at the overhead, equator, they mainly are comprised of high energy proton (10～100Mev) and high-energy electron (0.4～7Mev), and the dose rate of raying can reach respectively 1Gy/h～tens of Gy/h.For LEO, radiation dose comprises electronics and the proton of capturing band; And, for geostationary orbit, dosage is mainly the contribution of electronics.These rays through satellite shell cause the accumulated dose ionization radiation injury of electronic devices and components in satellite, cause satellite to break down or lose efficacy.Therefore,, long-life ground work highly reliable in order to ensure satellite, need the electronic devices and components capability of resistance to radiation that improves satellite badly.
Be generally 8～15 years the useful life of high rail satellite, and it is 80～100Krad(Si that its electronic devices and components resistant to total dose requires), be generally 3～5 years the useful life of low orbit satellite, it is 20～30Krad(Si that its electronic devices and components resistant to total dose requires).In order to reduce space radiation (total dose effect) environment to the damage of electronic devices and components for satellite, in recent years, some research institutes and high-tech company have proposed a kind ofly for the space electronic radiation both at home and abroad, improve the method for microelectronic component radioresistance level.This method is the method to the additional one deck radiation-proof shading material encapsulation of own encapsulation microelectron device, attempt the stopping the space high energy electron by shielding material, reduce the impact of high energy electron on microelectronic component, improve electronic device radioresistance level, particularly, said method is at electronic device surface label sheet lead, the method of the heavy metal thin plates such as tantalum skin shielding, the toughness reinforcing span of leaded 10% (mass fraction) of perhaps take comes phthalimide as matrix, select several typical submicron metal (W, Al, Ta, Ti etc.) add in resin, be shaped to required sandwich through molded curing, and adopt this sandwich to carry out shadow shield to electronic device.The former easily produces useless weight, and may introduce fifth wheel; And latter's submicron metal dispersing uniformity technology controlling and process complexity, and poor to the barrier propterty of bremstrahlen.
Summary of the invention
The problem that the present invention solves is existing electronic device radiation hardening encapsulating structure complex process and the poor problem of barrier propterty.
For addressing the above problem, the invention provides a kind of electronic device radiation hardening encapsulating structure, this structure comprises leaded dimaleoyl imino body, light metal film and heavy metal film, described light metal film is positioned on leaded dimaleoyl imino body, and described heavy metal film is positioned on the light metal film.
As a kind of improvement, mass fraction plumbous in described leaded dimaleoyl imino body is 8%～75%.
As a kind of improvement, the thickness of described leaded dimaleoyl imino body is 1mm～50mm.
As a kind of improvement, the thickness of described light metal film is 5um～50um.
As a kind of improvement, the material of described light metal film is aluminium or titanium.
As a kind of improvement, the thickness of described heavy metal film is 1um～50um.
As a kind of improvement, the material of described heavy metal film is lead, tungsten or tantalum.
As a kind of improvement, described encapsulating structure also comprises the high polymer binder layer, and this high polymer binder layer is positioned on described dimaleoyl imino body and is opposing with described light metal film, and described high polymer binder layer is polyether-ether-ketone layer or epoxy resin layer.
As a kind of improvement, described light metal film by magnetron sputtering deposition on described dimaleoyl imino body, described heavy metal film by magnetron sputtering deposition on described light metal film.
As a kind of improvement, the material of described light metal film is that aluminium and thickness are 10 or 50um, and the material of heavy metal film is that tungsten and thickness are 20um.
Compared with prior art, the present invention has the following advantages:
1, owing to the present invention includes heavy metal film and light metal film, combination by heavy metal film/light metal film, both reached shield effectiveness, the secondary electron that can avoid again reinforcing the heavy metal film generation encapsulated causes the radiation damage of enhancing to electronic device, thereby can obtain good anti-integral dose radiation effect, barrier propterty is good, and technique is simple.
2, owing to the present invention includes the high polymer binder layer, by this high polymer binder layer, this encapsulating structure is combined with electronic device, has avoided traditional binding-type screen method, improved the reliability of this encapsulating structure.
3, deposit respectively described light metal film and heavy metal film by magnetron sputtering, convenient control, technique is simple.
4, the material of described light metal film is that aluminium and thickness are 10 or 50um, and the material of heavy metal film is tungsten and thickness while being 20um, and the average radioresistance accumulated dose of electronic device radiation hardening encapsulating structure is greater than 100 Krad(Si), radioresistance is effective.
The accompanying drawing explanation
Fig. 1 is the structural representation of electronic device radiation hardening encapsulating structure of the present invention.
Embodiment
By describing technology contents of the present invention, structural feature in detail, being reached purpose and effect, below in conjunction with embodiment and coordinate accompanying drawing to be described in detail.
Refer to Fig. 1, the electronic device radiation hardening encapsulating structure of the present embodiment comprises heavy metal film 1, light metal film 2, leaded dimaleoyl imino body 3 and high polymer binder layer 4, and described radiation hardening encapsulating structure is for preventing that electronic device 5 is by proton and/or electron radiation.Mass fraction plumbous in described leaded dimaleoyl imino body 3 is 8%～75%, thickness is 1mm～50mm, the present inventor finds, the mass fraction of described lead is lower than 8% the time, can't meet the shielding requirements of satellite electron unit, and mass fraction is higher than 75% the time, encapsulating structure of the present invention is too heavy, this mass fraction can be also 10%-20%, or 15%; When thickness is less than 1mm, leaded dimaleoyl imino body 3 easily breaks under external impacts, produces fifth wheel, and thickness is while being greater than 50mm, and the volume of encapsulating structure is excessive, and this thickness can be also 1mm-5mm, or 2.5mm.Described light metal film 2 is positioned on described leaded dimaleoyl imino body 3, in specific embodiment, described light metal film 2 can be deposited on by the mode of magnetron sputtering on described leaded dimaleoyl imino body 3, the thickness of described light metal film 2 is 5um～50um, material is aluminium or titanium, when thickness is less than 5um, can not effectively to bremstrahlen, be shielded, and thickness is while being greater than 50um, because membrane stress is excessive, cause the adhesion between light metal film 2 and heavy metal film 1 to descend, this thickness can be also 5um-15um, or 10um.Described heavy metal film 1 is positioned on described light metal film 2, in specific embodiment, described heavy metal film 1 also can be deposited on by the mode of magnetron sputtering on described light metal film 2, the thickness of described heavy metal film 1 is 1um～50um, material is plumbous, tungsten or tantalum, when thickness is less than 1um, can not effectively to ionising radiation, be shielded, and thickness is while being greater than 50um, because membrane stress is excessive, cause the film-substrate cohesion between heavy metal film 1 and leaded dimaleoyl imino body 3 to descend, this thickness can be also 15um-30um, be perhaps 20um.The purpose of described high polymer binder layer 4 is that the described encapsulating structure of bonding is in electronic device 5, like this, reinforcing encapsulating structure of the present invention can be traditional binding-type and described electronic device 5 combine, improved the reliability of encapsulating structure, described high polymer binder layer 4 is positioned on described dimaleoyl imino body 3 and is opposing with described light metal film 2, and described high polymer binder layer 4 is polyether-ether-ketone layer or epoxy resin layer.
Please continue to consult Fig. 1, the material of light metal film 2 of take is aluminium, and the material of heavy metal film 1 is that tungsten is the forming process that example illustrates above-mentioned encapsulating structure:
Leaded dimaleoyl imino body 3 is put into to the supersonic wave cleaning machine washed with de-ionized water, then use the absolute ethyl alcohol ultrasonic cleaning; Then dry; Dried leaded dimaleoyl imino body 3 is put into to the vacuum chamber of magnetron sputtering coater, adopt conventional magnetron sputtering method on leaded dimaleoyl imino body 3 surfaces deposition of aluminum film successively as light metal film 2 and W film as heavy metal film 1; Finally adopt polyether-ether-ketone as high polymer binder layer 4, leaded dimaleoyl imino body 3 to be sticked on electronic device 5 shells.According to the usual method of this area, measure, when aluminium light metal film 2 thickness are 10 or 50um, when tungsten heavy metal film thickness is 20um, the average radioresistance accumulated dose that star encapsulates with the electronic device radiation hardening is greater than 100 Krad(Si).
Due to traditional lead, tungsten, although the heavy metals such as tantalum are the materials of best shielding primary electron, but its protection to bremstrahlen is poor, on the contrary, although aluminium, the light metals such as titanium have good bremstrahlen shielding properties, so, those skilled in the art are creationary to be combined heavy metal film 1/ light metal film 2 suitable its ratio of control, both reached shield effectiveness, the secondary electron that can avoid again reinforcing heavy metal film 1 generation encapsulated causes the radiation damage of enhancing to electronic device, thereby can obtain good anti-integral dose radiation effect, there is good anti-integral dose radiation performance, on not impact of electronic device, and preparation technology is simple, environmental protection, in addition, lead is good shielding material, but its area weight is larger, and film-forming process complexity, as metal dust, be added in bismaleimides lighter qualitatively than being encapsulated in stereotype merely, more can embody the characteristics of structure optimization.
Claims (10)
1. electronic device radiation hardening encapsulating structure, it is characterized in that: comprise leaded dimaleoyl imino body, light metal film and heavy metal film, described light metal film is positioned on leaded dimaleoyl imino body, and described heavy metal film is positioned on the light metal film.
2. electronic device radiation hardening encapsulating structure as claimed in claim 1 is characterized in that: mass fraction plumbous in described leaded dimaleoyl imino body is 8%～75%.
3. electronic device radiation hardening encapsulating structure as claimed in claim 1 or 2, it is characterized in that: the thickness of described leaded dimaleoyl imino body is 1mm～50mm.
4. electronic device radiation hardening encapsulating structure as claimed in claim 1, it is characterized in that: the thickness of described light metal film is 5um～50um.
5. electronic device radiation hardening encapsulating structure as described as claim 1 or 4, it is characterized in that: the material of described light metal film is aluminium or titanium.
6. electronic device radiation hardening encapsulating structure as claimed in claim 1, it is characterized in that: the thickness of described heavy metal film is 1um～50um.
7. electronic device radiation hardening encapsulating structure as described as claim 1 or 3 is characterized in that: the material of described heavy metal film is plumbous, tungsten or tantalum.
8. electronic device radiation hardening encapsulating structure as claimed in claim 1, it is characterized in that: described encapsulating structure also comprises the high polymer binder layer, this high polymer binder layer is positioned on described dimaleoyl imino body and is opposing with described light metal film, and described high polymer binder layer is polyether-ether-ketone layer or epoxy resin layer.
9. electronic device radiation hardening encapsulating structure as claimed in claim 1, it is characterized in that: described light metal film by magnetron sputtering deposition on described dimaleoyl imino body, described heavy metal film by magnetron sputtering deposition on described light metal film.
10. electronic device radiation hardening encapsulating structure as claimed in claim 1 is characterized in that: the material of described light metal film is that aluminium and thickness are 10 or 50um, and the material of heavy metal film is that tungsten and thickness are 20um.
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| CN2012101772541A CN103456719A (en) | 2012-06-01 | 2012-06-01 | Electronic device radiation-resistant reinforcing packaging structure |
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| CN2012101772541A CN103456719A (en) | 2012-06-01 | 2012-06-01 | Electronic device radiation-resistant reinforcing packaging structure |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103723289A (en) * | 2014-01-26 | 2014-04-16 | 南通通洋机电制造有限公司 | Radiation shielding assembly for artificial satellite |
| CN103996673A (en) * | 2014-05-22 | 2014-08-20 | 中国科学院新疆理化技术研究所 | Method for improving total dosage effect of anti-ionizing radiation of device |
| CN105511328A (en) * | 2016-01-11 | 2016-04-20 | 华东理工大学 | Nuclear power station mechanical arm and radiation-resistant two-phase stepping motor driver |
| CN109548312A (en) * | 2018-10-15 | 2019-03-29 | 江苏万邦微电子有限公司 | A kind of reinforcement means of Flouride-resistani acid phesphatase soft copy |
| CN109548311A (en) * | 2018-10-15 | 2019-03-29 | 江苏万邦微电子有限公司 | A kind of component radiation hardened method |
| CN109548310A (en) * | 2018-10-15 | 2019-03-29 | 江苏万邦微电子有限公司 | A kind of reinforcement means of component Flouride-resistani acid phesphatase |
| CN110098457A (en) * | 2019-06-12 | 2019-08-06 | 西南应用磁学研究所 | A kind of aerospace vehicle of radiation hardened quadrature bridge out of my cabin |
| CN111235562A (en) * | 2020-03-04 | 2020-06-05 | 中国科学院金属研究所 | Method for preparing anti-irradiation tantalum coating by adopting cold spraying |
| CN111235563A (en) * | 2020-03-04 | 2020-06-05 | 中国科学院金属研究所 | Method for preparing Ta/Al composite anti-irradiation coating by adopting cold spraying |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103723289A (en) * | 2014-01-26 | 2014-04-16 | 南通通洋机电制造有限公司 | Radiation shielding assembly for artificial satellite |
| CN103996673A (en) * | 2014-05-22 | 2014-08-20 | 中国科学院新疆理化技术研究所 | Method for improving total dosage effect of anti-ionizing radiation of device |
| CN105511328A (en) * | 2016-01-11 | 2016-04-20 | 华东理工大学 | Nuclear power station mechanical arm and radiation-resistant two-phase stepping motor driver |
| CN109548312A (en) * | 2018-10-15 | 2019-03-29 | 江苏万邦微电子有限公司 | A kind of reinforcement means of Flouride-resistani acid phesphatase soft copy |
| CN109548311A (en) * | 2018-10-15 | 2019-03-29 | 江苏万邦微电子有限公司 | A kind of component radiation hardened method |
| CN109548310A (en) * | 2018-10-15 | 2019-03-29 | 江苏万邦微电子有限公司 | A kind of reinforcement means of component Flouride-resistani acid phesphatase |
| CN110098457A (en) * | 2019-06-12 | 2019-08-06 | 西南应用磁学研究所 | A kind of aerospace vehicle of radiation hardened quadrature bridge out of my cabin |
| CN111235562A (en) * | 2020-03-04 | 2020-06-05 | 中国科学院金属研究所 | Method for preparing anti-irradiation tantalum coating by adopting cold spraying |
| CN111235563A (en) * | 2020-03-04 | 2020-06-05 | 中国科学院金属研究所 | Method for preparing Ta/Al composite anti-irradiation coating by adopting cold spraying |
| CN111235562B (en) * | 2020-03-04 | 2022-01-14 | 中国科学院金属研究所 | Method for preparing anti-irradiation tantalum coating by adopting cold spraying |
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