CN1307617C - Magnetic storage medium and its prepn - Google Patents
Magnetic storage medium and its prepn Download PDFInfo
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- CN1307617C CN1307617C CNB031138756A CN03113875A CN1307617C CN 1307617 C CN1307617 C CN 1307617C CN B031138756 A CNB031138756 A CN B031138756A CN 03113875 A CN03113875 A CN 03113875A CN 1307617 C CN1307617 C CN 1307617C
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- storage medium
- magnetic
- magnetic storage
- preparation
- nanometers
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Abstract
The present invention provides a magnetic storage medium which comprises a porous aluminum oxide mould plate with uniform micropores and a magnetic material deposited in the uniform micropores. The magnetic material contains CoCrPtX or CoCrPtTaX alloys, wherein X represents any type of boron, nitrogen and carbon. The diameter of a magnetic particle is from 1 to 5 nanometers, and the interval between magnetic particles is from 2 to 10 nanometers. The magnetic storage medium of the present invention presents a columnar shape limited by the micropores, has higher vertical guiding magnetism and has coercive force in the axial direction of 8000 to 20, 000 Qe; thus, no superparamagnetism phenomenon occurs so as to make storage density reach 6.45*10<13> bit/in<2>. The present invention also provides a method for making magnetic storage materials.
Description
[technical field]
The present invention relates to a kind of magnetic storage medium and preparation method thereof, relate in particular to a kind of nanoscale magnetic storage medium and preparation method thereof.
[background technology]
Along with the present information science and technology development, the memory capacity of magnetic storage mediums such as disk, tape to be had higher requirement, and will on limited area, improve its memory capacity, key is to improve the storage density of storage medium.As a kind of high density magnetic storage medium, require medium to have the high magnetization, big coercive force, good stable and enough performances such as physical strength.
In order to improve the information storage density of storage medium, must seek the method that increases coercive force in the medium face and reduce the medium grain size simultaneously.The making of small size magnetic particle uses methods such as photoetching or self assembly to realize usually.Can expect that at present it is about 50nm that deep UV (ultraviolet light) (DUV) photoetching technique is extended to lateral dimension, but this expansion is unreliable and expensive.When size during less than 50nm, can use X-ray lithography technology and source ultraviolet light photoetching technique, but the both needs huge fund input, practical at present is few.
The description of the 40-70nm particle self-assembling method of being made by latices or other polymkeric substance sees that Micheletto etc. is at Langmuir, 11,3333-3336 (1995), A Simple Methodfor the Production of a Two-Dimensional Ordered Array of SmallLatex Particles one literary composition.The description that forms that 5-10nm size semiconductor particle is arranged by preface sees that Murray etc. is at Science, 270,1335-1338 (1995), Self-Organizationof CdSe Nanocrystallites into Three-Dimensional Quantum DotSuperlattices one literary composition.Neither one is told about magnetic storage medium and is not also told about the method for being made oldered array by particle in the prior art list of references.
The a publication number of International Business Machine Corporation (IBM) is CN1243999A, and the Chinese patent application that open day is on February 9th, 2000 discloses a kind of magnetic storage medium that is formed by the self assembly of nanometer particle chemistry.This magnetic storage medium is formed by being arranged on the substrate surface the uniformly basic and basic at interval nanoscale magnetic particle layer uniformly of diameter, described particle has the diameter that is no more than 50nm and includes magnetic material, this magnetic material from the metallic compound, bianry alloy and the ternary alloy three-partalloy that comprise Elements C o, Fe, Ni, Mn, Sm, Nd, Pr, Pt and Gd, these elements, and except that Fe, also comprise iron oxide and the barium ferrite or the strontium ferrite of at least a element the aforementioned elements.The area bit density of this magnetic storage medium surpasses per square inch 100 kilomegabits even near per square inch 10
12The position, promptly 10
12Bit/in
2
But the magnetic particle of this magnetic storage medium is utilization self-assembling method preparation, and uniform particles is uncertain, and size reduces to produce super-paramagnetic phenomena again, thereby has limited the further raising of this magnetic storage medium storage surface density.
[summary of the invention]
The technical problem to be solved in the present invention is that to overcome above magnetic particle particle inhomogeneous, and the deficiency that storage density can not further improve provides a kind of magnetic particle uniform particles and can not reduce to produce the magnetic storage medium of the high storage density of super-paramagnetic phenomena because of size.
Another technical matters that the present invention will solve provides a kind of method for preparing above-mentioned magnetic storage medium.
The technical scheme of technical solution problem of the present invention is: a kind of magnetic storage medium is provided, it comprises the porous alumina formwork of a tool uniform micro and is deposited on magnetic material in this uniform micro, this magnetic material contains CoCrPtX or CoCrPtTaX alloy, wherein X represents a kind of of boron, nitrogen or carbon, the magnetic particle diameter is 1～5 nanometer, and spacing is 2～10 nanometers between adjacent magnetic particle.
Preferably, this magnetic storage medium also comprises a protective seam, and this protective seam is deposited on the alumina formwork surface and is deposited on magnetic material in the template micropore with protection.
The technical scheme that the present invention solves another technical matters is: a kind of method for preparing magnetic storage medium is provided, and this method may further comprise the steps:
(1) at the alumina formwork of aluminum substrate surface utilization oxidizing process formation tool uniform micro, the diameter of this uniform micro is 1～5 nanometer;
(2) deposit magnetic material in the micropore of alumina formwork, this magnetic material contains CoCrPtX or CoCrPtTaX alloy, and wherein X represents a kind of of boron, nitrogen or carbon.
Preferably, can also behind the deposition magnetic material, be deposited on magnetic material in the template micropore with protection at alumina formwork surface deposition layer protective layer.
Compared with prior art, magnetic storage medium provided by the invention, because of in uniform micro, depositing, therefore uniform particles is column, the vertical incorgruous magnetic that tool is higher, the axial direction coercive force is 8000～20, between 000 Oe, thereby can not produce super-paramagnetic phenomena, thereby can make storage density reach 6.45 * 10
13Bit/in
2
Compared with prior art, the present invention prepares magnetic storage medium by adopting the template synthetic method, can make magnetic particle uniform particles controlled, and the magnetic particle is limit by the aperture, is column, the vertical incorgruous magnetic that tool is higher, the coercive force of magnetic storage medium is improved, and then storage density is improved.
[description of drawings]
Fig. 1 is the cut-open view of porous alumina formwork of the present invention.
Fig. 2 is that magnetic material is deposited on the cut-open view in the micropore of template shown in Figure 1.
Fig. 3 is the synoptic diagram that deposits protective seam at template surface shown in Figure 2.
Fig. 4 is the synoptic diagram that deposits lubricant layer on protective seam shown in Figure 3.
[embodiment]
See also Fig. 1, be the porous alumina formwork 10 of the selected preparation magnetic memory materials of the present invention.This porous alumina formwork 10 can at first pass through C
2F
6Gas has selects the surface of etching aluminium matter matrix to produce nano dot, then aluminium matter matrix is placed the high temperature baking box that has the hyperoxia air-flow chamber, through the oxidation of certain hour, forms microwell array 12.The pore size unanimity of this microwell array is 1～5 nanometer, is preferably 1～3 nanometer; Spacing is 2～10 nanometers between the micropore, is preferably 2～5 nanometers; The degree of depth of each micropore is 2.5～7.5 nanometers.This microwell array 12 is column substantially, is evenly distributed and arranges in order, and is separate between the hole, hole, so interlaced phenomenon can not take place because of the inclination of micropore.Alternatively, the gas of this etching aluminum substrate also can be CH
4And CF
4Mixed gas.
See also Fig. 2, for magnetic material CoCrPtX is deposited in the porous alumina formwork 10, wherein X is any material of boron, nitrogen, carbon.This magnetic material can be deposited in the micropore by sputter (Sputtering), ion beam depositing (Ion-Beam Deposition) or ion plating (IonPlating), in the present embodiment, at first CoCrPtX is made film, then Woelm Alumina lamina membranacea 10 is placed its right opposite, with the plasma bombardment CoCrPtX film target of argon gas, CoCrPtX just is deposited in the microwell array 12 of Woelm Alumina lamina membranacea 10 then.Wherein, magnetic material can also be used CoCrPtTaX except that above-mentioned CoCrPtX, and wherein X also is any material of boron, nitrogen, carbon.
After magnetic material is deposited in the micropore 12 of porous alumina formwork 10, with the magnetic material of the non-bore portion in hydrofluorite flush away lamina membranacea surface.
The magnetic material that is deposited in the micropore 12 of template 10 is subjected to the limit of micropore to be a column 14 (as shown in Figure 2) substantially.The diameter of this column 14 is identical with micro-pore diameter, is 1～5 nanometer, is preferably 1～3 nanometer, this column 14 is the higher vertical incorgruous magnetic of tool also, at the higher coercive force of axial direction tool, 8000～20, between 000 Oe, thereby can be because of the too little super-paramagnetic phenomena that occurs of its size.Spacing is 2～10 nanometers between this column 14, is preferably 2～5 nanometers, and height is 2.5～7.5 nanometers.As representing storage density with 1 magnetic particle/bit, the storage density of these magnetic memory materials is about 6.45 * 10
13Bit/in
2, improved the storage density of magnetic memory materials greatly.
Be better protection and fix these magnetic memory materials 14 in micropore 12, also can be after cleaning be finished, at the surface deposition layer protective layer 16 (as shown in Figure 3) of template 10.The material of this protective seam 16 can be selected diamond like carbon, adamas, agraphitic carbon or unformed silicon for use.As select diamond-like materials for use, and can utilize argon gas and hydrogen, methane or ethane mixed gas reaction sputter (Reactive Sputtering) to deposit, these protective seam 16 thickness are 5～10 nanometers, are preferably 5～8 nanometers.The deposition of protective seam 16 also can adopt those of ordinary skill any suitable mode known in present technique field to deposit; as; plasma auxiliary chemical vapor deposition or sputter coating method deposition; or 10 to 150～300 ℃ of porous alumina formworks of heating, and sample is exposed in hexane plasma or the similar carbon source molecular plasma deposit.
See also Fig. 4, to better implement the present invention, after having deposited protective seam 16, also can be at protective seam 16 surface deposition one deck lubricating layers 18.The material of this lubricating layer 18 can be selected PFPE (PFPE) for use, and by immersion film-coated method (Dip Coating) or method of spin coating deposition, its thickness is 0.5～2 nanometer, is preferably 0.7～1.5 nanometer.
Claims (12)
1. magnetic storage medium, it comprises the porous alumina formwork of a tool uniform micro and is deposited on magnetic material in this uniform micro, this magnetic material contains a kind of of CoCrPtX or CoCrPtTaX alloy, wherein X represents a kind of of boron, nitrogen or carbon, it is characterized in that the magnetic particle diameter is 1～5 nanometer, spacing is 2～10 nanometers between the magnetic particle.
2. magnetic storage medium as claimed in claim 1 is characterized in that this magnetic particle height is 2.5～7.5 nanometers.
3. magnetic storage medium as claimed in claim 1 is characterized in that this magnetic storage medium comprises that also one is deposited on the protective seam on alumina formwork surface.
4. magnetic storage medium as claimed in claim 3 is characterized in that this protective layer material is a kind of of adamas, diamond like carbon, agraphitic carbon, unformed silicon, and thickness is 5～10 nanometers.
5. magnetic storage medium as claimed in claim 3 is characterized in that this magnetic storage medium comprises that also one is deposited on the lubricating layer on the protective seam, and this lubricating layer material is a PFPE.
6. the preparation method of a magnetic storage medium as claimed in claim 1 is characterized in that may further comprise the steps:
(1) forming the alumina formwork of tool uniform micro with the aluminum substrate surface through oxidation, the diameter of this uniform micro is 1～5 nanometer;
(2) deposit magnetic material in the micropore of alumina formwork, this magnetic material contains a kind of of CoCrPtX or CoCrPtTaX alloy, and wherein X represents a kind of of boron, nitrogen or carbon.
7. the preparation method of magnetic storage medium as claimed in claim 6 is characterized in that also comprising the magnetic material with the non-bore portion in hydrofluorite flush away lamina membranacea surface after step (2).
8. the preparation method of magnetic storage medium as claimed in claim 7 also is included in template surface after it is characterized in that cleaning and deposits a protective seam, and this protective layer material can be adamas, diamond like carbon, agraphitic carbon or unformed silicon, and thickness is 5～10 nanometers.
9. the preparation method of magnetic storage medium as claimed in claim 8, it is characterized in that depositing a protective seam after, also be included in deposition one lubricating layer on the protective seam, this lubricating layer material is a PFPE.
10. the preparation method of magnetic storage medium as claimed in claim 6 is characterized in that magnetic material is by sputter, ion beam depositing or ion plating deposition in the step (2).
11. the preparation method of magnetic storage medium as claimed in claim 8 is characterized in that protective seam is with argon gas and hydrogen, methane or ethane mixed gas reaction sputtering method deposition.
12. the preparation method of magnetic storage medium as claimed in claim 9 is characterized in that lubricating layer is with immersion film-coated method or method of spin coating deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031138756A CN1307617C (en) | 2003-03-04 | 2003-03-04 | Magnetic storage medium and its prepn |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031138756A CN1307617C (en) | 2003-03-04 | 2003-03-04 | Magnetic storage medium and its prepn |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1527288A CN1527288A (en) | 2004-09-08 |
| CN1307617C true CN1307617C (en) | 2007-03-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031138756A Expired - Fee Related CN1307617C (en) | 2003-03-04 | 2003-03-04 | Magnetic storage medium and its prepn |
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| Country | Link |
|---|---|
| CN (1) | CN1307617C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100412951C (en) * | 2005-05-13 | 2008-08-20 | 鸿富锦精密工业（深圳）有限公司 | Magnetic recording medium and making method thereof |
| CN100426383C (en) * | 2005-09-02 | 2008-10-15 | 鸿富锦精密工业（深圳）有限公司 | Magnetic recording medium and method for manufacturing same |
| JP5394688B2 (en) * | 2008-10-03 | 2014-01-22 | 株式会社アルバック | Magnetic storage medium manufacturing method, magnetic storage medium, and information storage device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0769728A (en) * | 1993-09-02 | 1995-03-14 | Kobe Steel Ltd | Production of carbon substrate |
| CN1243999A (en) * | 1998-07-31 | 2000-02-09 | 国际商业机器公司 | Magnetic memory medium formed from nano size particles |
-
2003
- 2003-03-04 CN CNB031138756A patent/CN1307617C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0769728A (en) * | 1993-09-02 | 1995-03-14 | Kobe Steel Ltd | Production of carbon substrate |
| CN1243999A (en) * | 1998-07-31 | 2000-02-09 | 国际商业机器公司 | Magnetic memory medium formed from nano size particles |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1527288A (en) | 2004-09-08 |
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