CN103441151A - 一种低正向压降的二极管 - Google Patents
一种低正向压降的二极管 Download PDFInfo
- Publication number
- CN103441151A CN103441151A CN2013103801844A CN201310380184A CN103441151A CN 103441151 A CN103441151 A CN 103441151A CN 2013103801844 A CN2013103801844 A CN 2013103801844A CN 201310380184 A CN201310380184 A CN 201310380184A CN 103441151 A CN103441151 A CN 103441151A
- Authority
- CN
- China
- Prior art keywords
- type
- heavily doped
- doped region
- diode
- forward voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000009825 accumulation Methods 0.000 claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 238000001465 metallisation Methods 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 4
- 230000003139 buffering effect Effects 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 10
- 238000005036 potential barrier Methods 0.000 abstract description 5
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000001413 cellular effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310380184.4A CN103441151B (zh) | 2013-08-27 | 2013-08-27 | 一种低正向压降的二极管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310380184.4A CN103441151B (zh) | 2013-08-27 | 2013-08-27 | 一种低正向压降的二极管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103441151A true CN103441151A (zh) | 2013-12-11 |
CN103441151B CN103441151B (zh) | 2017-02-01 |
Family
ID=49694836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310380184.4A Active CN103441151B (zh) | 2013-08-27 | 2013-08-27 | 一种低正向压降的二极管 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103441151B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104393055A (zh) * | 2014-11-10 | 2015-03-04 | 电子科技大学 | 一种具有浮岛结构的沟槽型二极管 |
CN112349772A (zh) * | 2020-11-05 | 2021-02-09 | 北京工业大学 | 累积型mos沟道二极管结构 |
CN112992834A (zh) * | 2021-02-09 | 2021-06-18 | 捷捷微电(上海)科技有限公司 | 一种源栅间接电连接的先进二极管封装结构 |
CN116190420A (zh) * | 2023-02-24 | 2023-05-30 | 上海林众电子科技有限公司 | 一种快恢复二极管结构及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1478302A (zh) * | 2000-10-03 | 2004-02-25 | ���﹫˾ | 短沟道碳化硅功率mosfets及其制造方法 |
US6781194B2 (en) * | 2001-04-11 | 2004-08-24 | Silicon Semiconductor Corporation | Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein |
CN102184939A (zh) * | 2011-03-28 | 2011-09-14 | 电子科技大学 | 一种具有高k介质槽的半导体功率器件 |
WO2012083590A1 (en) * | 2010-12-20 | 2012-06-28 | The Hong Kong University Of Science And Technology | Power semiconductor field effect transistor structure with charge trapping material in the gate dielectric |
CN102544114A (zh) * | 2012-02-29 | 2012-07-04 | 电子科技大学 | 一种积累型槽栅二极管 |
-
2013
- 2013-08-27 CN CN201310380184.4A patent/CN103441151B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1478302A (zh) * | 2000-10-03 | 2004-02-25 | ���﹫˾ | 短沟道碳化硅功率mosfets及其制造方法 |
US6781194B2 (en) * | 2001-04-11 | 2004-08-24 | Silicon Semiconductor Corporation | Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein |
WO2012083590A1 (en) * | 2010-12-20 | 2012-06-28 | The Hong Kong University Of Science And Technology | Power semiconductor field effect transistor structure with charge trapping material in the gate dielectric |
CN102184939A (zh) * | 2011-03-28 | 2011-09-14 | 电子科技大学 | 一种具有高k介质槽的半导体功率器件 |
CN102544114A (zh) * | 2012-02-29 | 2012-07-04 | 电子科技大学 | 一种积累型槽栅二极管 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104393055A (zh) * | 2014-11-10 | 2015-03-04 | 电子科技大学 | 一种具有浮岛结构的沟槽型二极管 |
CN104393055B (zh) * | 2014-11-10 | 2017-03-15 | 电子科技大学 | 一种具有浮岛结构的沟槽型二极管 |
CN112349772A (zh) * | 2020-11-05 | 2021-02-09 | 北京工业大学 | 累积型mos沟道二极管结构 |
CN112992834A (zh) * | 2021-02-09 | 2021-06-18 | 捷捷微电(上海)科技有限公司 | 一种源栅间接电连接的先进二极管封装结构 |
CN116190420A (zh) * | 2023-02-24 | 2023-05-30 | 上海林众电子科技有限公司 | 一种快恢复二极管结构及其制备方法 |
CN116190420B (zh) * | 2023-02-24 | 2024-03-26 | 上海林众电子科技有限公司 | 一种快恢复二极管结构及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103441151B (zh) | 2017-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104201206B (zh) | 一种横向soi功率ldmos器件 | |
US11211485B2 (en) | Trench power transistor | |
CN114122123B (zh) | 集成高速续流二极管的碳化硅分离栅mosfet及制备方法 | |
CN103441148A (zh) | 一种集成肖特基二极管的槽栅vdmos器件 | |
US11081574B2 (en) | IGBT power device | |
CN112420694B (zh) | 集成反向肖特基续流二极管的可逆导碳化硅jfet功率器件 | |
CN109166923B (zh) | 一种屏蔽栅mosfet | |
CN109166921B (zh) | 一种屏蔽栅mosfet | |
CN104409519A (zh) | 一种具有浮岛结构的二极管 | |
CN102723363A (zh) | 一种vdmos器件及其制作方法 | |
US9263560B2 (en) | Power semiconductor device having reduced gate-collector capacitance | |
CN109755303B (zh) | 一种igbt功率器件 | |
CN109755311B (zh) | 一种沟槽型功率晶体管 | |
CN109755238B (zh) | 一种分栅结构的超结功率器件 | |
CN103441151B (zh) | 一种低正向压降的二极管 | |
CN113823679A (zh) | 栅控二极管整流器 | |
CN113410299B (zh) | 一种高耐压的n沟道LDMOS器件及其制备方法 | |
CN109888006B (zh) | 一种低功耗绝缘体上硅横向绝缘栅双极型晶体管 | |
CN113054016B (zh) | 一种碳化硅mosfet器件的元胞结构及功率半导体器件 | |
CN103887332A (zh) | 一种新型功率半导体器件 | |
CN106229342A (zh) | 一种多积累层的金属氧化物半导体二极管 | |
CN109755298B (zh) | 一种沟槽型igbt功率器件 | |
CN107464839B (zh) | 一种防止关断失效的栅控晶闸管器件 | |
CN111276537A (zh) | 一种具有多晶硅耐压层的逆导型rc-ligbt器件 | |
CN113410298B (zh) | 一种具有表面耐压结构的n沟道LDMOS器件及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 518129, Guangdong Province, Longgang District, Bantian District, Shenzhen street, snow Gang Road, south section No. 1007 Regal Garden Wing Hing Building, No. 201-29 Patentee after: Shenzhen core Dms Microelectronic Ltd Address before: 214000, B1, building 999, No. 9 East high wave road, Binhu District, Jiangsu, Wuxi Patentee before: Wuxi Chip Hope Micro-Electronics Ltd. |
|
CI03 | Correction of invention patent |
Correction item: Patentee|Address Correct: Wuxi Chip Hope Micro-Electronics Ltd.|214000, B1, building 999, No. 9 East high wave road, Binhu District, Jiangsu, Wuxi False: Shenzhen core Dms Microelectronic Ltd|518129, Guangdong Province, Longgang District, Bantian District, Shenzhen street, snow Gang Road, south section No. 1007 Regal Garden Wing Hing Building, No. 201-29 Number: 36-02 Volume: 33 |
|
CI03 | Correction of invention patent | ||
CP03 | Change of name, title or address |
Address after: 518129, Guangdong Province, Longgang District, Bantian District, Shenzhen street, snow Gang Road, south section No. 1007 Regal Garden Wing Hing Building, No. 201-29 Patentee after: Shenzhen core Dms Microelectronic Ltd Address before: 214000, B1, building 999, No. 9 East high wave road, Binhu District, Jiangsu, Wuxi Patentee before: Wuxi Chip Hope Micro-Electronics Ltd. |
|
CP03 | Change of name, title or address | ||
CP02 | Change in the address of a patent holder |
Address after: 518129 Guangdong Shenzhen Luohu District Qingshui River street Qingshui River road 116 No. 1 deep 15 tower Patentee after: Shenzhen core Dms Microelectronic Ltd Address before: 518129 No. 201-29, Rong Hing mansion, Regal Garden, 1007 Longgang section, Bantian District, Shenzhen, Guangdong. Patentee before: Shenzhen core Dms Microelectronic Ltd |
|
CP02 | Change in the address of a patent holder |