CN103436847B - 基于震荡式反应气体控制的反应溅射*** - Google Patents
基于震荡式反应气体控制的反应溅射*** Download PDFInfo
- Publication number
- CN103436847B CN103436847B CN201310312221.8A CN201310312221A CN103436847B CN 103436847 B CN103436847 B CN 103436847B CN 201310312221 A CN201310312221 A CN 201310312221A CN 103436847 B CN103436847 B CN 103436847B
- Authority
- CN
- China
- Prior art keywords
- gas
- reaction
- carrier
- flow
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 37
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 26
- 239000007789 gas Substances 0.000 claims abstract description 65
- 239000012495 reaction gas Substances 0.000 claims abstract description 33
- 239000012159 carrier gas Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000009514 concussion Effects 0.000 claims abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052720 vanadium Inorganic materials 0.000 claims description 11
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910000765 intermetallic Inorganic materials 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 description 15
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 description 10
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 description 10
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 150000002736 metal compounds Chemical class 0.000 description 5
- 238000005546 reactive sputtering Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000003682 vanadium compounds Chemical class 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310312221.8A CN103436847B (zh) | 2013-07-24 | 2013-07-24 | 基于震荡式反应气体控制的反应溅射*** |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310312221.8A CN103436847B (zh) | 2013-07-24 | 2013-07-24 | 基于震荡式反应气体控制的反应溅射*** |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103436847A CN103436847A (zh) | 2013-12-11 |
CN103436847B true CN103436847B (zh) | 2016-11-23 |
Family
ID=49690559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310312221.8A Active CN103436847B (zh) | 2013-07-24 | 2013-07-24 | 基于震荡式反应气体控制的反应溅射*** |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103436847B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106756865A (zh) * | 2016-12-14 | 2017-05-31 | 文晓斌 | 一种磁控溅射反应气氛自反馈控制***及其使用方法 |
CN107034443B (zh) * | 2017-03-23 | 2019-03-29 | 江西沃格光电股份有限公司 | 高阻膜的镀膜装置 |
CN113930735A (zh) * | 2021-10-15 | 2022-01-14 | 无锡尚积半导体科技有限公司 | 一种改善氧化钒膜厚均匀性的气相沉积设备及其气相沉积方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5942089A (en) * | 1996-04-22 | 1999-08-24 | Northwestern University | Method for sputtering compounds on a substrate |
CN101355010A (zh) * | 2007-07-26 | 2009-01-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 进气装置及反应腔室 |
CN101864558A (zh) * | 2009-04-16 | 2010-10-20 | 北京广微积电科技有限公司 | 反应溅射*** |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01278013A (ja) * | 1988-04-29 | 1989-11-08 | Nippon Electric Ind Co Ltd | スパッタリング装置 |
JPH06144991A (ja) * | 1992-10-30 | 1994-05-24 | Nec Corp | 分子線エピタキシー装置のセル材料交換・補充時期判断方法 |
-
2013
- 2013-07-24 CN CN201310312221.8A patent/CN103436847B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5942089A (en) * | 1996-04-22 | 1999-08-24 | Northwestern University | Method for sputtering compounds on a substrate |
CN101355010A (zh) * | 2007-07-26 | 2009-01-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 进气装置及反应腔室 |
CN101864558A (zh) * | 2009-04-16 | 2010-10-20 | 北京广微积电科技有限公司 | 反应溅射*** |
Also Published As
Publication number | Publication date |
---|---|
CN103436847A (zh) | 2013-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8906208B2 (en) | Sputtering apparatus, sputtering method, and electronic device manufacturing method | |
CN103436847B (zh) | 基于震荡式反应气体控制的反应溅射*** | |
CN103046008A (zh) | 溅射方法 | |
CN101864558A (zh) | 反应溅射*** | |
JP2014515060A (ja) | リチウム均一性を制御する改善された方法 | |
Ahadi et al. | Role of oxygen admixture in stabilizing TiO x nanoparticle deposition from a gas aggregation source | |
CN101654770B (zh) | 一种在柔性基材上制备氧化铟锡导电膜的生产工艺 | |
KR102244994B1 (ko) | AlN을 함유한 압전막을 증착하는 방법 및 AlN을 함유한 압전막 | |
WO2008013237A1 (en) | Method for forming transparent conductive film | |
Ishii et al. | Hollow cathode sputtering cluster source for low energy deposition: Deposition of Fe small clusters | |
JP3615647B2 (ja) | 透明導電膜の製造方法およびその透明導電膜 | |
Kormunda et al. | A single target RF magnetron co-sputtered iron doped tin oxide films with pillars | |
CN204779787U (zh) | 一种磁控溅射靶枪 | |
US9925557B2 (en) | Method for the synthesis of a nanostructured composite material and a device for implementing said method | |
Li et al. | Novel high power impulse magnetron sputtering enhanced by an auxiliary electrical field | |
Kozák et al. | Dynamics of processes during the deposition of ZrO2 films by controlled reactive high-power impulse magnetron sputtering: A modelling study | |
Cuynet et al. | An efficient way to evidence and to measure the metal ion fraction in high power impulse magnetron sputtering (HiPIMS) post-discharge with Pt, Au, Pd and mixed targets | |
CN106770401A (zh) | 氢氦同位素核散射截面的测量方法 | |
Wei et al. | Preparation and characteristics of vanadium oxide thin films by controlling the sputtering voltage | |
JPH09170993A (ja) | 酸化スズ薄膜の製造方法および該薄膜を用いたガス感知用センサ | |
CN111850489A (zh) | 靶材中间料及其形成方法和实现该形成方法的装置 | |
KR100954287B1 (ko) | 전도성 카본 코팅장치 및 방법 | |
Scheffel et al. | Plasma-assisted deposition of indium tin oxide thin films by sublimation using an anodic vacuum arc discharge | |
CN104651790A (zh) | 一种金属电阻率Cu/Cu2O半导体弥散复合薄膜及其制备方法 | |
TW202012656A (zh) | 反應性陰極電弧蒸鍍系統鍍製鋰化合物薄膜之裝置與方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160920 Address after: 214200 No. 16 apricot Road, Yixing Economic Development Zone, Jiangsu Applicant after: WUXI YUANCHUANGHUAXIN MICROELECTROMECHANICAL CO.,LTD. Applicant after: JIANGSU YONGKANG MACHINERY Co.,Ltd. Address before: 214000 Jiangsu New District of Wuxi City Branch Park Chinese Sensor Network International Innovation Park B Building 1 floor Applicant before: WUXI WEIQI TECHNOLOGY CO.,LTD. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: No. 16 Xingli Road, Yixing Economic Development Zone, Jiangsu Province, 214200 Patentee after: WUXI YUANCHUANGHUAXIN MICROELECTROMECHANICAL CO.,LTD. Country or region after: China Patentee after: Jiangsu Yongkang Intelligent Defense Technology Co.,Ltd. Address before: No. 16 Xingli Road, Yixing Economic Development Zone, Jiangsu Province, 214200 Patentee before: WUXI YUANCHUANGHUAXIN MICROELECTROMECHANICAL CO.,LTD. Country or region before: China Patentee before: JIANGSU YONGKANG MACHINERY Co.,Ltd. |
|
CP03 | Change of name, title or address |