CN103434030A - Method for cutting silicon ingot by squaring machine - Google Patents

Method for cutting silicon ingot by squaring machine Download PDF

Info

Publication number
CN103434030A
CN103434030A CN2011104600133A CN201110460013A CN103434030A CN 103434030 A CN103434030 A CN 103434030A CN 2011104600133 A CN2011104600133 A CN 2011104600133A CN 201110460013 A CN201110460013 A CN 201110460013A CN 103434030 A CN103434030 A CN 103434030A
Authority
CN
China
Prior art keywords
silicon ingot
set velocity
cutting
speed
place
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011104600133A
Other languages
Chinese (zh)
Other versions
CN103434030B (en
Inventor
***
王康
任军海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yingli Energy China Co Ltd
Original Assignee
Yingli Energy China Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yingli Energy China Co Ltd filed Critical Yingli Energy China Co Ltd
Priority to CN201110460013.3A priority Critical patent/CN103434030B/en
Publication of CN103434030A publication Critical patent/CN103434030A/en
Application granted granted Critical
Publication of CN103434030B publication Critical patent/CN103434030B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

The invention provides a method for cutting a silicon ingot by a squaring machine. The method comprises the following steps of: selecting granularity of quartz sand of F360; adopting omeprazole stock solution; setting the slurry temperature to be 18-22 DEG C and the density of the slurry to be between 1.635 and 1.660; selecting with a structural line with the line diameter of 0.3 mm; cutting with tension of 90 N; starting a cutter at a starting section at a first preset speed and gradually increasing to a second preset speed; cutting at a working section at a third preset speed; gradually reducing the speed from the third preset speed to a fourth preset speed at an end section, wherein the first preset speed is less than the second preset speed, and the third preset speed is full speed and is greater than the fourth preset speed. According to the method, the cutting process of the machine tool is divided into three sections, low-speed cutting is performed at the starting section at the first preset speed, high-speed cutting is performed at the working section at the third preset speed, and the speed is reduced to the fourth preset speed at the end section; the cutting speed is improved at the working section through change of the cutting parameters, thus the machining time of the silicon ingot is shortened and the utilization rate of the equipment is improved.

Description

A kind of method of broken side's machine cutting silicon ingot
Technical field
The present invention relates to the semiconductor processing technology field, more particularly, relate to a kind of method of broken side's machine cutting silicon ingot.
Background technology
Silicon is a kind of very important semi-conducting material, in fields such as diode, luminescent device, solar cells, is widely used.In fast-developing photovoltaic industry, high efficiency and low cost are two main competition spots always, and crystalline silicon relies on the efficient stable of its battery always in occupation of absolute advantage as current main solar cell material.
Because the silicon ingot of producing is large-sized silico briquette, for the follow-up silico briquette that obtains given size easy to process need to be cut large-sized silicon ingot simultaneously, broken square machine is exactly the equipment of given size silico briquette that large-sized silicon ingot is cut into, its incision principle is for utilizing the structure line to be arranged as a network structure by guider, by driven by motor gauze high speed reciprocating operation, carry the mortar slow decreasing silicon ingot is carried out to grinding.
The mode that existing broken side's machine drives cutting fluid with steel wire is: using 0.25mm wire diameter cutting speed general control between 700-750um/min, is linear incision at the uniform velocity, process time about 7.5H; Use 0.30mm wire diameter cutting speed general control between 1200-1400um/min, be about between 4.5-5H process time.From data, use this structure line to carry the speed of method integral body of mortar cutting too slow, the process-cycle of silicon ingot is long, affects the performance of equipment capacity.
In sum, how to provide a kind of method of broken side's machine cutting silicon ingot, shorten the process-cycle of silicon ingot to improve cutting speed, thereby realize the high usage of equipment, become current those skilled in the art's problem demanding prompt solution.
Summary of the invention
In view of this, the invention provides a kind of method of broken side's machine cutting silicon ingot, shorten the process-cycle of silicon ingot to improve cutting speed, thereby improve the utilization rate of equipment.
In order to achieve the above object, the invention provides following technical scheme:
A kind of method of broken side's machine cutting silicon ingot comprises the following steps:
1) setup parameter, choose the quartz sand that granularity is F360, adopts Losec stoste, and the setting slurry temperature is 18-22 ℃, and the density of slurry is between 1.635-1.660, and the structure line of selected 0.3mm wire diameter is used the tension force of 90N to be cut;
2) silicon ingot is cut, while playing the cutter section, workbench plays cutter and brings up to gradually the second pre-set velocity with the first pre-set velocity, during active section, workbench cuts with the 3rd pre-set velocity, the ending segment workbench is down to the 4th pre-set velocity gradually from the 3rd pre-set velocity, wherein, the first pre-set velocity is lower than the second pre-set velocity, and the 3rd pre-set velocity is full gear and higher than the 4th pre-set velocity.
The temperature of the slurry preferably, in the method for above-mentioned broken side's machine cutting silicon ingot, described step 1) is 20 ℃.
Preferably, in the method for above-mentioned broken side's machine cutting silicon ingot, described step 2) in, the initial end face that described cutter section is silicon ingot is to 25% place of silicon ingot, and described the first pre-set velocity is 1320um/min, and described the second pre-set velocity is 2000um/min; 25% place that described active section is silicon ingot is to 80% place, and described the 3rd pre-set velocity is 2000um/min; 80% place that described ending segment is silicon ingot is to the end end face of silicon ingot, and described the 4th pre-set velocity is 1800um/min.
Preferably, in the method for above-mentioned broken side's machine cutting silicon ingot, described step 2) in, the initial end face that described cutter section is silicon ingot is to 15% place of silicon ingot, and described the first pre-set velocity is 1750um/min, and described the second pre-set velocity is 1750um/min; 30% place that described active section is silicon ingot is to 90% place, and described the 3rd pre-set velocity is 2500um/min; The end end face of 90% place's silicon ingot that described ending segment is silicon ingot, described the 4th pre-set velocity is 2000um/min.
From above-mentioned technical scheme, can find out, the method of a kind of broken side's machine cutting silicon ingot provided by the invention, at first set the parameter of broken square machine, wherein choose the quartz sand of F360, adopt Losec stoste, the setting slurry temperature is 18-22 ℃, the density of slurry is between 1.635-1.660, the structure line of selected 0.3mm wire diameter, use the tension force of 90N to be cut, then with the speed of presetting, silicon ingot is cut, while playing the cutter section, workbench plays cutter and brings up to gradually the second pre-set velocity with the first pre-set velocity, while arriving active section, workbench cuts with the 3rd pre-set velocity, the ending segment workbench is down to the 4th pre-set velocity gradually from the 3rd pre-set velocity, wherein, the first pre-set velocity is lower than the second pre-set velocity, the 3rd pre-set velocity is full gear and higher than the 4th pre-set velocity.The present invention does not need to change lathe hardware without equipment investment, process by the cutting by lathe is divided into three sections, and cut the cutter section with the first pre-set velocity low speed cutting with different speed, active section is with the 3rd pre-set velocity high-speed cutting, reduced clipping time, ending segment is down to the 4th pre-set velocity, and the change of cutting technique parameter has improved cutting speed at active section, effectively shorten the process time of silicon ingot, thereby improved the utilization rate of equipment.
The accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, in below describing embodiment, the accompanying drawing of required use is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 cuts the flow chart of the method for silicon ingot for broken side's machine that the embodiment of the present invention provides.
The specific embodiment
The invention provides a kind of method of broken side's machine cutting silicon ingot, shorten the process-cycle of silicon ingot to improve cutting speed, thereby improve the utilization rate of equipment.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making under the creative work prerequisite the every other embodiment obtained, belong to the scope of protection of the invention.
Please refer to accompanying drawing 1, Fig. 1 cuts the flow chart of the method for silicon ingot for broken side's machine that the embodiment of the present invention provides.
The invention provides a kind of method of broken side's machine cutting silicon ingot, carry the method for mortar cutting compares with existing structure line, existing cutting speed general control is between 1200-1400um/min and be at the uniform velocity to cut, cutting speed causes the long processing time of silicon ingot slowly, affect the performance of equipment capacity, and the present invention is not changing under the condition of lathe hardware without equipment investment, reach the purpose of raising cutting speed by the change of cutting technique parameter, concrete step:
S1: setup parameter, choose the quartz sand that granularity is F360, adopt Losec stoste, the setting slurry temperature is 18-22 ℃, and the density of slurry is between 1.635-1.660, and the structure line of selected 0.3mm wire diameter is used the tension force of 90N to be cut;
The cutting power of abrasive grains that improves the mortar that cutting speed claimed structure line carries if want is strong as far as possible, by type selecting, determines and uses the quartz sand that granularity is F360, and suspension adopts Losec stoste; For the silt carrying capacity that strengthens the structure line is set as slurry temperature between 18-22 ℃, the density of slurry is between 1.635-1.660; During high-speed cutting, because the speed of table is fast, the line bow is large very large to the requirement of strength of structure line, by type selecting, finally determines the structure line that uses the 0.30mm wire diameter; Considering that Equipment reaches the impact stressed on the wearing and tearing of lathe overcoat, guide wheel and finally determines that the tension force of use 90N is cut.
S2: silicon ingot is cut, and while playing the cutter section, workbench plays cutter and brings up to gradually the second pre-set velocity with the first pre-set velocity, and during active section, workbench cuts with the 3rd pre-set velocity, and the ending segment workbench is down to the 4th pre-set velocity gradually from the 3rd pre-set velocity.
In order to make the outward appearance of silicon ingot after cutting good, need the stable cutting of workbench, play cutter and bring up to gradually the second pre-set velocity with the first pre-set velocity when playing the cutter section, after the cutting certain-length, enter active section; At active section, workbench cuts with the 3rd pre-set velocity, cuts to while approaching end position and enters ending segment; When ending segment, workbench is down to the 4th pre-set velocity gradually from the 3rd pre-set velocity, and silicon ingot is cut, and completes brokenly the cutting work of square machine.
Due to the temperature of slurry, when 20 spend, the silt carrying capacity maximum of structure line, therefore, be preferably 20 degree by the Temperature Setting of slurry in broken side's machine cutting method provided by the invention.
Pre-set velocity in specific embodiment one provided by the invention is 2000um/min, the temperature that after use F360 and Losec stoste slurry renewal 300L, before cutting, density is 1.641KG/L and mortar is 20 degree, and the flow set of slurry is 160KG/min, with the structure line of 0.30mm, cut.When playing the cutter section, workbench plays cutter with the first pre-set velocity 1320um/min, and while cutting to 25% place of silicon ingot, speed rises to 2000um/min gradually, and enters active section with the speed of 2000um/min; When active section, workbench is at the uniform velocity cut silicon ingot with 2000um/min, until cut to silicon ingot the time enter ending segment; When ending segment, from the 80% end face to silicon ingot of silicon ingot, the speed of workbench is reduced to 1800um/min gradually from 2000um/min, and silicon ingot has been cut to the cutting to silicon ingot.Wherein, linear speed is 15m/s, loop line 70%, front cabling 300.This saw runs well the line bow steadily in cutting process, and the slurry motor rotation is steady, the temperature constant of slurry, and the outward appearance of the silicon ingot after cutting is good.
In specific embodiment two provided by the invention, the pre-set velocity arranged is 2500um/min, the silicon ingot of cutting 400KG, after using F360 and Losec stoste slurry to upgrade 300L, interpolation F360 quartz sand makes density for 1.660KG/L, the Temperature Setting of mortar is 20 degree, and the flow set of slurry is 160KG/min, with the structure line of 0.30mm, cut.When playing the cutter section, workbench plays cutter with 1750um/min, and at the uniform velocity is cut to 15% place of silicon ingot with 1750um/min; When active section, from 30% to 90% place of silicon ingot, workbench at the uniform velocity cuts silicon ingot with the speed of 2500um/min; At ending segment, from 90% end face of the end to silicon ingot of silicon ingot, the speed of workbench is reduced to 2000um/min gradually from 2500um/min, and silicon ingot is cut, and has completed the cutting to silicon ingot; Arrive 30% place of silicon ingot at 15% place of silicon ingot, the speed of workbench rises to 2500um/min gradually from 1750um/min.Wherein, linear speed is 14.5m/s, the front cabling 400 of loop line 75%.It is more steady that the process machine tool running is cut in this sawing, and heat engine was cut after 6 minutes, the better Non Apparent Abnormality of silicon ingot outward appearance after cutting, and the peripheral kerf of silicon ingot is not too obvious, and polishing effect is good.
In specific embodiment three provided by the invention, the pre-set velocity of setting is 3000um/min, cutting 270KG silicon ingot, and after using F360 and Losec stoste slurry to upgrade 300L, density is 1.635KG/L, temperature is 20 degree, with the structure line with 0.30mm, is cut.When playing the cutter section, workbench plays cutter with 2100um/min, and at the uniform velocity is cut to 15% place of silicon ingot with 2100um/min; When active section, from 30% to 90% place of silicon ingot, workbench at the uniform velocity cuts silicon ingot with the speed of 3000um/min; At ending segment, from 90% end face of the end to silicon ingot of silicon ingot, the speed of workbench is reduced to 2400um/min gradually from 3000um/min, and silicon ingot has been cut to the cutting to silicon ingot; Arrive 30% place of silicon ingot at 15% place of silicon ingot, the speed of workbench rises to 3000um/min gradually from 2100um/min.Wherein, linear speed is 15m/s, the front cabling 450 of loop line 75%.But it is normal occur shutting down phenomenon midway that process machine tool running power is cut in this sawing, silicon ingot the off-dimension phenomenon do not appear yet.
The present invention does not need to change lathe hardware without equipment investment, process by the cutting by lathe is divided into three sections, and cut the cutter section with the first pre-set velocity low speed cutting with different speed, active section is with the 3rd pre-set velocity high-speed cutting, reduced clipping time, ending segment is down to the 4th pre-set velocity, and the change of cutting technique parameter has improved cutting speed at active section, effectively shorten the process time of silicon ingot, thereby improved the utilization rate of equipment.
In this specification, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is and the difference of other embodiment that between each embodiment, identical similar part is mutually referring to getting final product.
To the above-mentioned explanation of the disclosed embodiments, make professional and technical personnel in the field can realize or use the present invention.Multiple modification to these embodiment will be apparent for those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from the spirit or scope of the present invention, realization in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.

Claims (4)

1. the method for a broken square machine cutting silicon ingot, is characterized in that, comprises the following steps:
1) setup parameter, choose the quartz sand that granularity is F360, adopts Losec stoste, and the setting slurry temperature is 18-22 ℃, and the density of slurry is between 1.635-1.660, and the structure line of selected 0.3mm wire diameter is used the tension force of 90N to be cut;
2) silicon ingot is cut, while playing the cutter section, workbench plays cutter and brings up to gradually the second pre-set velocity with the first pre-set velocity, during active section, workbench cuts with the 3rd pre-set velocity, the ending segment workbench is down to the 4th pre-set velocity gradually from the 3rd pre-set velocity, wherein, the first pre-set velocity is lower than the second pre-set velocity, and the 3rd pre-set velocity is full gear and higher than the 4th pre-set velocity.
2. the method for broken side's machine cutting silicon ingot according to claim 1, is characterized in that described step 1) in the temperature of slurry be 20 ℃.
3. the method that broken side's machine according to claim 2 cuts silicon ingot, it is characterized in that described step 2) in, the initial end face that described cutter section is silicon ingot is to 25% place of silicon ingot, described the first pre-set velocity is 1320um/min, and described the second pre-set velocity is 2000um/min; 25% place that described active section is silicon ingot is to 80% place, and described the 3rd pre-set velocity is 2000um/min; 80% place that described ending segment is silicon ingot is to the end end face of silicon ingot, and described the 4th pre-set velocity is 1800um/min.
4. the method that broken side's machine according to claim 2 cuts silicon ingot, it is characterized in that described step 2) in, the initial end face that described cutter section is silicon ingot is to 15% place of silicon ingot, described the first pre-set velocity is 1750um/min, and described the second pre-set velocity is 1750um/min; 30% place that described active section is silicon ingot is to 90% place, and described the 3rd pre-set velocity is 2500um/min; 90% place that described ending segment is silicon ingot is to the end end face of silicon ingot, and described the 4th pre-set velocity is 2000um/min.
CN201110460013.3A 2011-12-31 2011-12-31 Method for cutting silicon ingot by squaring machine Expired - Fee Related CN103434030B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110460013.3A CN103434030B (en) 2011-12-31 2011-12-31 Method for cutting silicon ingot by squaring machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110460013.3A CN103434030B (en) 2011-12-31 2011-12-31 Method for cutting silicon ingot by squaring machine

Publications (2)

Publication Number Publication Date
CN103434030A true CN103434030A (en) 2013-12-11
CN103434030B CN103434030B (en) 2015-04-01

Family

ID=49687791

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110460013.3A Expired - Fee Related CN103434030B (en) 2011-12-31 2011-12-31 Method for cutting silicon ingot by squaring machine

Country Status (1)

Country Link
CN (1) CN103434030B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106933183A (en) * 2015-12-29 2017-07-07 上海金湖挤出设备有限公司 A kind of mechanical section bar Chipless cutting machine control system
CN107116712A (en) * 2017-05-26 2017-09-01 杨凌美畅新材料有限公司 A kind of method for electroplating diamond wire high efficiency cutting silicon chip
CN109093867A (en) * 2018-09-26 2018-12-28 国家电投集团西安太阳能电力有限公司 Solar energy single crystal silicon rod graph thinning cutting method
CN110466085A (en) * 2019-07-24 2019-11-19 徐州鑫晶半导体科技有限公司 The method of cutting silicon rod
CN112026032A (en) * 2020-09-03 2020-12-04 阜宁协鑫光伏科技有限公司 M12 large-size silicon wafer cutting method
CN112140375A (en) * 2020-09-28 2020-12-29 中电化合物半导体有限公司 Multi-wire cutting system and method for silicon carbide wafer

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0752149A (en) * 1993-08-19 1995-02-28 Shin Etsu Chem Co Ltd Production of wafer
EP0749817A1 (en) * 1995-06-22 1996-12-27 Shin-Etsu Handotai Company Limited Wire saw slicing apparatus and slicing method
JPH11138412A (en) * 1997-11-14 1999-05-25 Tokyo Seimitsu Co Ltd Wire saw having fixed abrasive grains and its cutting method of workpiece to be cut
JP2000042896A (en) * 1998-07-24 2000-02-15 Tokyo Seimitsu Co Ltd Cutting method for wire saw
CN1788965A (en) * 2004-11-23 2006-06-21 希特隆股份有限公司 Apparatus and method for slicing an ingot
CN101979230A (en) * 2010-05-21 2011-02-23 北京天科合达蓝光半导体有限公司 Method for cutting silicon carbide crystal in sections by using multi-line cutter
CN102152420A (en) * 2011-03-24 2011-08-17 哈尔滨奥瑞德光电技术股份有限公司 Low-loss oriented cutting method of large-size sapphire crystal blanks

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0752149A (en) * 1993-08-19 1995-02-28 Shin Etsu Chem Co Ltd Production of wafer
EP0749817A1 (en) * 1995-06-22 1996-12-27 Shin-Etsu Handotai Company Limited Wire saw slicing apparatus and slicing method
JPH11138412A (en) * 1997-11-14 1999-05-25 Tokyo Seimitsu Co Ltd Wire saw having fixed abrasive grains and its cutting method of workpiece to be cut
JP2000042896A (en) * 1998-07-24 2000-02-15 Tokyo Seimitsu Co Ltd Cutting method for wire saw
CN1788965A (en) * 2004-11-23 2006-06-21 希特隆股份有限公司 Apparatus and method for slicing an ingot
CN101979230A (en) * 2010-05-21 2011-02-23 北京天科合达蓝光半导体有限公司 Method for cutting silicon carbide crystal in sections by using multi-line cutter
CN102152420A (en) * 2011-03-24 2011-08-17 哈尔滨奥瑞德光电技术股份有限公司 Low-loss oriented cutting method of large-size sapphire crystal blanks

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106933183A (en) * 2015-12-29 2017-07-07 上海金湖挤出设备有限公司 A kind of mechanical section bar Chipless cutting machine control system
CN107116712A (en) * 2017-05-26 2017-09-01 杨凌美畅新材料有限公司 A kind of method for electroplating diamond wire high efficiency cutting silicon chip
CN107116712B (en) * 2017-05-26 2018-09-11 杨凌美畅新材料股份有限公司 A method of plating silicon wafer cut by diamond wire
CN109093867A (en) * 2018-09-26 2018-12-28 国家电投集团西安太阳能电力有限公司 Solar energy single crystal silicon rod graph thinning cutting method
CN110466085A (en) * 2019-07-24 2019-11-19 徐州鑫晶半导体科技有限公司 The method of cutting silicon rod
CN112026032A (en) * 2020-09-03 2020-12-04 阜宁协鑫光伏科技有限公司 M12 large-size silicon wafer cutting method
CN112140375A (en) * 2020-09-28 2020-12-29 中电化合物半导体有限公司 Multi-wire cutting system and method for silicon carbide wafer

Also Published As

Publication number Publication date
CN103434030B (en) 2015-04-01

Similar Documents

Publication Publication Date Title
CN103434030B (en) Method for cutting silicon ingot by squaring machine
CN101979230B (en) Method for cutting silicon carbide crystal in sections by using multi-line cutter
KR101483892B1 (en) Diamond wire saw device
CN101554757A (en) Cutting method of crystalline silicon blocks
CN103072211B (en) A kind of wiresaw cutting method
CN103786274A (en) Diamond fretsaw device for polycrystalline silicon ingot squaring
CN103753716A (en) Diamond fretsaw device for cutting single crystal silicon rod
CN104781045B (en) Fret saw and cutting off processing method
CN103386522A (en) Solar silicon rod double-wire cutting method and device
CN108214952A (en) A kind of full-automatic distributed polysilicon excavation machine and evolution method
CN203579915U (en) Fret saw machining system capable of being reconstructed
CN203622673U (en) Diamond scroll saw device for cutting off monocrystalline silicon stick
CN105643820A (en) Cutting device of diamond wire mono-crystal silicon rods
CN102172997B (en) Silicon crystal line cutting equipment
CN204278268U (en) Pv600 slicer tilting gauze cutter sweep
CN103182747B (en) Multi-wire sawing wire net system
CN204566418U (en) Numerical control sapphire multistation single line excavation machine cable pulling-pushing device
CN201808158U (en) Solar silicon chip cutting directing bar
CN103144208A (en) Fretsaw cutting method
CN103394765B (en) A kind of seamless pipe inwall processing unit (plant)
CN203380718U (en) Numerical control cutting and grinding machine for slot wedges
CN202640588U (en) Precisely-positioning cutting device of solar battery silicon wafer
CN108927908B (en) Cutting method for wire cutting machine
CN203527276U (en) Chuck flap wheel
CN107263750A (en) The cutting method and three-dimensional structure solar silicon wafers of solar silicon wafers

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150401