CN103434030A - Method for cutting silicon ingot by squaring machine - Google Patents
Method for cutting silicon ingot by squaring machine Download PDFInfo
- Publication number
- CN103434030A CN103434030A CN2011104600133A CN201110460013A CN103434030A CN 103434030 A CN103434030 A CN 103434030A CN 2011104600133 A CN2011104600133 A CN 2011104600133A CN 201110460013 A CN201110460013 A CN 201110460013A CN 103434030 A CN103434030 A CN 103434030A
- Authority
- CN
- China
- Prior art keywords
- silicon ingot
- set velocity
- cutting
- speed
- place
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 89
- 239000010703 silicon Substances 0.000 title claims abstract description 89
- 238000005520 cutting process Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000002002 slurry Substances 0.000 claims abstract description 23
- SUBDBMMJDZJVOS-UHFFFAOYSA-N 5-methoxy-2-{[(4-methoxy-3,5-dimethylpyridin-2-yl)methyl]sulfinyl}-1H-benzimidazole Chemical compound N=1C2=CC(OC)=CC=C2NC=1S(=O)CC1=NC=C(C)C(OC)=C1C SUBDBMMJDZJVOS-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000006004 Quartz sand Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000003754 machining Methods 0.000 abstract 1
- 229960000381 omeprazole Drugs 0.000 abstract 1
- 239000011550 stock solution Substances 0.000 abstract 1
- 239000004570 mortar (masonry) Substances 0.000 description 6
- 239000004484 Briquette Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Images
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention provides a method for cutting a silicon ingot by a squaring machine. The method comprises the following steps of: selecting granularity of quartz sand of F360; adopting omeprazole stock solution; setting the slurry temperature to be 18-22 DEG C and the density of the slurry to be between 1.635 and 1.660; selecting with a structural line with the line diameter of 0.3 mm; cutting with tension of 90 N; starting a cutter at a starting section at a first preset speed and gradually increasing to a second preset speed; cutting at a working section at a third preset speed; gradually reducing the speed from the third preset speed to a fourth preset speed at an end section, wherein the first preset speed is less than the second preset speed, and the third preset speed is full speed and is greater than the fourth preset speed. According to the method, the cutting process of the machine tool is divided into three sections, low-speed cutting is performed at the starting section at the first preset speed, high-speed cutting is performed at the working section at the third preset speed, and the speed is reduced to the fourth preset speed at the end section; the cutting speed is improved at the working section through change of the cutting parameters, thus the machining time of the silicon ingot is shortened and the utilization rate of the equipment is improved.
Description
Technical field
The present invention relates to the semiconductor processing technology field, more particularly, relate to a kind of method of broken side's machine cutting silicon ingot.
Background technology
Silicon is a kind of very important semi-conducting material, in fields such as diode, luminescent device, solar cells, is widely used.In fast-developing photovoltaic industry, high efficiency and low cost are two main competition spots always, and crystalline silicon relies on the efficient stable of its battery always in occupation of absolute advantage as current main solar cell material.
Because the silicon ingot of producing is large-sized silico briquette, for the follow-up silico briquette that obtains given size easy to process need to be cut large-sized silicon ingot simultaneously, broken square machine is exactly the equipment of given size silico briquette that large-sized silicon ingot is cut into, its incision principle is for utilizing the structure line to be arranged as a network structure by guider, by driven by motor gauze high speed reciprocating operation, carry the mortar slow decreasing silicon ingot is carried out to grinding.
The mode that existing broken side's machine drives cutting fluid with steel wire is: using 0.25mm wire diameter cutting speed general control between 700-750um/min, is linear incision at the uniform velocity, process time about 7.5H; Use 0.30mm wire diameter cutting speed general control between 1200-1400um/min, be about between 4.5-5H process time.From data, use this structure line to carry the speed of method integral body of mortar cutting too slow, the process-cycle of silicon ingot is long, affects the performance of equipment capacity.
In sum, how to provide a kind of method of broken side's machine cutting silicon ingot, shorten the process-cycle of silicon ingot to improve cutting speed, thereby realize the high usage of equipment, become current those skilled in the art's problem demanding prompt solution.
Summary of the invention
In view of this, the invention provides a kind of method of broken side's machine cutting silicon ingot, shorten the process-cycle of silicon ingot to improve cutting speed, thereby improve the utilization rate of equipment.
In order to achieve the above object, the invention provides following technical scheme:
A kind of method of broken side's machine cutting silicon ingot comprises the following steps:
1) setup parameter, choose the quartz sand that granularity is F360, adopts Losec stoste, and the setting slurry temperature is 18-22 ℃, and the density of slurry is between 1.635-1.660, and the structure line of selected 0.3mm wire diameter is used the tension force of 90N to be cut;
2) silicon ingot is cut, while playing the cutter section, workbench plays cutter and brings up to gradually the second pre-set velocity with the first pre-set velocity, during active section, workbench cuts with the 3rd pre-set velocity, the ending segment workbench is down to the 4th pre-set velocity gradually from the 3rd pre-set velocity, wherein, the first pre-set velocity is lower than the second pre-set velocity, and the 3rd pre-set velocity is full gear and higher than the 4th pre-set velocity.
The temperature of the slurry preferably, in the method for above-mentioned broken side's machine cutting silicon ingot, described step 1) is 20 ℃.
Preferably, in the method for above-mentioned broken side's machine cutting silicon ingot, described step 2) in, the initial end face that described cutter section is silicon ingot is to 25% place of silicon ingot, and described the first pre-set velocity is 1320um/min, and described the second pre-set velocity is 2000um/min; 25% place that described active section is silicon ingot is to 80% place, and described the 3rd pre-set velocity is 2000um/min; 80% place that described ending segment is silicon ingot is to the end end face of silicon ingot, and described the 4th pre-set velocity is 1800um/min.
Preferably, in the method for above-mentioned broken side's machine cutting silicon ingot, described step 2) in, the initial end face that described cutter section is silicon ingot is to 15% place of silicon ingot, and described the first pre-set velocity is 1750um/min, and described the second pre-set velocity is 1750um/min; 30% place that described active section is silicon ingot is to 90% place, and described the 3rd pre-set velocity is 2500um/min; The end end face of 90% place's silicon ingot that described ending segment is silicon ingot, described the 4th pre-set velocity is 2000um/min.
From above-mentioned technical scheme, can find out, the method of a kind of broken side's machine cutting silicon ingot provided by the invention, at first set the parameter of broken square machine, wherein choose the quartz sand of F360, adopt Losec stoste, the setting slurry temperature is 18-22 ℃, the density of slurry is between 1.635-1.660, the structure line of selected 0.3mm wire diameter, use the tension force of 90N to be cut, then with the speed of presetting, silicon ingot is cut, while playing the cutter section, workbench plays cutter and brings up to gradually the second pre-set velocity with the first pre-set velocity, while arriving active section, workbench cuts with the 3rd pre-set velocity, the ending segment workbench is down to the 4th pre-set velocity gradually from the 3rd pre-set velocity, wherein, the first pre-set velocity is lower than the second pre-set velocity, the 3rd pre-set velocity is full gear and higher than the 4th pre-set velocity.The present invention does not need to change lathe hardware without equipment investment, process by the cutting by lathe is divided into three sections, and cut the cutter section with the first pre-set velocity low speed cutting with different speed, active section is with the 3rd pre-set velocity high-speed cutting, reduced clipping time, ending segment is down to the 4th pre-set velocity, and the change of cutting technique parameter has improved cutting speed at active section, effectively shorten the process time of silicon ingot, thereby improved the utilization rate of equipment.
The accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, in below describing embodiment, the accompanying drawing of required use is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 cuts the flow chart of the method for silicon ingot for broken side's machine that the embodiment of the present invention provides.
The specific embodiment
The invention provides a kind of method of broken side's machine cutting silicon ingot, shorten the process-cycle of silicon ingot to improve cutting speed, thereby improve the utilization rate of equipment.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making under the creative work prerequisite the every other embodiment obtained, belong to the scope of protection of the invention.
Please refer to accompanying drawing 1, Fig. 1 cuts the flow chart of the method for silicon ingot for broken side's machine that the embodiment of the present invention provides.
The invention provides a kind of method of broken side's machine cutting silicon ingot, carry the method for mortar cutting compares with existing structure line, existing cutting speed general control is between 1200-1400um/min and be at the uniform velocity to cut, cutting speed causes the long processing time of silicon ingot slowly, affect the performance of equipment capacity, and the present invention is not changing under the condition of lathe hardware without equipment investment, reach the purpose of raising cutting speed by the change of cutting technique parameter, concrete step:
S1: setup parameter, choose the quartz sand that granularity is F360, adopt Losec stoste, the setting slurry temperature is 18-22 ℃, and the density of slurry is between 1.635-1.660, and the structure line of selected 0.3mm wire diameter is used the tension force of 90N to be cut;
The cutting power of abrasive grains that improves the mortar that cutting speed claimed structure line carries if want is strong as far as possible, by type selecting, determines and uses the quartz sand that granularity is F360, and suspension adopts Losec stoste; For the silt carrying capacity that strengthens the structure line is set as slurry temperature between 18-22 ℃, the density of slurry is between 1.635-1.660; During high-speed cutting, because the speed of table is fast, the line bow is large very large to the requirement of strength of structure line, by type selecting, finally determines the structure line that uses the 0.30mm wire diameter; Considering that Equipment reaches the impact stressed on the wearing and tearing of lathe overcoat, guide wheel and finally determines that the tension force of use 90N is cut.
S2: silicon ingot is cut, and while playing the cutter section, workbench plays cutter and brings up to gradually the second pre-set velocity with the first pre-set velocity, and during active section, workbench cuts with the 3rd pre-set velocity, and the ending segment workbench is down to the 4th pre-set velocity gradually from the 3rd pre-set velocity.
In order to make the outward appearance of silicon ingot after cutting good, need the stable cutting of workbench, play cutter and bring up to gradually the second pre-set velocity with the first pre-set velocity when playing the cutter section, after the cutting certain-length, enter active section; At active section, workbench cuts with the 3rd pre-set velocity, cuts to while approaching end position and enters ending segment; When ending segment, workbench is down to the 4th pre-set velocity gradually from the 3rd pre-set velocity, and silicon ingot is cut, and completes brokenly the cutting work of square machine.
Due to the temperature of slurry, when 20 spend, the silt carrying capacity maximum of structure line, therefore, be preferably 20 degree by the Temperature Setting of slurry in broken side's machine cutting method provided by the invention.
Pre-set velocity in specific embodiment one provided by the invention is 2000um/min, the temperature that after use F360 and Losec stoste slurry renewal 300L, before cutting, density is 1.641KG/L and mortar is 20 degree, and the flow set of slurry is 160KG/min, with the structure line of 0.30mm, cut.When playing the cutter section, workbench plays cutter with the first pre-set velocity 1320um/min, and while cutting to 25% place of silicon ingot, speed rises to 2000um/min gradually, and enters active section with the speed of 2000um/min; When active section, workbench is at the uniform velocity cut silicon ingot with 2000um/min, until cut to silicon ingot the time enter ending segment; When ending segment, from the 80% end face to silicon ingot of silicon ingot, the speed of workbench is reduced to 1800um/min gradually from 2000um/min, and silicon ingot has been cut to the cutting to silicon ingot.Wherein, linear speed is 15m/s, loop line 70%, front cabling 300.This saw runs well the line bow steadily in cutting process, and the slurry motor rotation is steady, the temperature constant of slurry, and the outward appearance of the silicon ingot after cutting is good.
In specific embodiment two provided by the invention, the pre-set velocity arranged is 2500um/min, the silicon ingot of cutting 400KG, after using F360 and Losec stoste slurry to upgrade 300L, interpolation F360 quartz sand makes density for 1.660KG/L, the Temperature Setting of mortar is 20 degree, and the flow set of slurry is 160KG/min, with the structure line of 0.30mm, cut.When playing the cutter section, workbench plays cutter with 1750um/min, and at the uniform velocity is cut to 15% place of silicon ingot with 1750um/min; When active section, from 30% to 90% place of silicon ingot, workbench at the uniform velocity cuts silicon ingot with the speed of 2500um/min; At ending segment, from 90% end face of the end to silicon ingot of silicon ingot, the speed of workbench is reduced to 2000um/min gradually from 2500um/min, and silicon ingot is cut, and has completed the cutting to silicon ingot; Arrive 30% place of silicon ingot at 15% place of silicon ingot, the speed of workbench rises to 2500um/min gradually from 1750um/min.Wherein, linear speed is 14.5m/s, the front cabling 400 of loop line 75%.It is more steady that the process machine tool running is cut in this sawing, and heat engine was cut after 6 minutes, the better Non Apparent Abnormality of silicon ingot outward appearance after cutting, and the peripheral kerf of silicon ingot is not too obvious, and polishing effect is good.
In specific embodiment three provided by the invention, the pre-set velocity of setting is 3000um/min, cutting 270KG silicon ingot, and after using F360 and Losec stoste slurry to upgrade 300L, density is 1.635KG/L, temperature is 20 degree, with the structure line with 0.30mm, is cut.When playing the cutter section, workbench plays cutter with 2100um/min, and at the uniform velocity is cut to 15% place of silicon ingot with 2100um/min; When active section, from 30% to 90% place of silicon ingot, workbench at the uniform velocity cuts silicon ingot with the speed of 3000um/min; At ending segment, from 90% end face of the end to silicon ingot of silicon ingot, the speed of workbench is reduced to 2400um/min gradually from 3000um/min, and silicon ingot has been cut to the cutting to silicon ingot; Arrive 30% place of silicon ingot at 15% place of silicon ingot, the speed of workbench rises to 3000um/min gradually from 2100um/min.Wherein, linear speed is 15m/s, the front cabling 450 of loop line 75%.But it is normal occur shutting down phenomenon midway that process machine tool running power is cut in this sawing, silicon ingot the off-dimension phenomenon do not appear yet.
The present invention does not need to change lathe hardware without equipment investment, process by the cutting by lathe is divided into three sections, and cut the cutter section with the first pre-set velocity low speed cutting with different speed, active section is with the 3rd pre-set velocity high-speed cutting, reduced clipping time, ending segment is down to the 4th pre-set velocity, and the change of cutting technique parameter has improved cutting speed at active section, effectively shorten the process time of silicon ingot, thereby improved the utilization rate of equipment.
In this specification, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is and the difference of other embodiment that between each embodiment, identical similar part is mutually referring to getting final product.
To the above-mentioned explanation of the disclosed embodiments, make professional and technical personnel in the field can realize or use the present invention.Multiple modification to these embodiment will be apparent for those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from the spirit or scope of the present invention, realization in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (4)
1. the method for a broken square machine cutting silicon ingot, is characterized in that, comprises the following steps:
1) setup parameter, choose the quartz sand that granularity is F360, adopts Losec stoste, and the setting slurry temperature is 18-22 ℃, and the density of slurry is between 1.635-1.660, and the structure line of selected 0.3mm wire diameter is used the tension force of 90N to be cut;
2) silicon ingot is cut, while playing the cutter section, workbench plays cutter and brings up to gradually the second pre-set velocity with the first pre-set velocity, during active section, workbench cuts with the 3rd pre-set velocity, the ending segment workbench is down to the 4th pre-set velocity gradually from the 3rd pre-set velocity, wherein, the first pre-set velocity is lower than the second pre-set velocity, and the 3rd pre-set velocity is full gear and higher than the 4th pre-set velocity.
2. the method for broken side's machine cutting silicon ingot according to claim 1, is characterized in that described step 1) in the temperature of slurry be 20 ℃.
3. the method that broken side's machine according to claim 2 cuts silicon ingot, it is characterized in that described step 2) in, the initial end face that described cutter section is silicon ingot is to 25% place of silicon ingot, described the first pre-set velocity is 1320um/min, and described the second pre-set velocity is 2000um/min; 25% place that described active section is silicon ingot is to 80% place, and described the 3rd pre-set velocity is 2000um/min; 80% place that described ending segment is silicon ingot is to the end end face of silicon ingot, and described the 4th pre-set velocity is 1800um/min.
4. the method that broken side's machine according to claim 2 cuts silicon ingot, it is characterized in that described step 2) in, the initial end face that described cutter section is silicon ingot is to 15% place of silicon ingot, described the first pre-set velocity is 1750um/min, and described the second pre-set velocity is 1750um/min; 30% place that described active section is silicon ingot is to 90% place, and described the 3rd pre-set velocity is 2500um/min; 90% place that described ending segment is silicon ingot is to the end end face of silicon ingot, and described the 4th pre-set velocity is 2000um/min.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110460013.3A CN103434030B (en) | 2011-12-31 | 2011-12-31 | Method for cutting silicon ingot by squaring machine |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110460013.3A CN103434030B (en) | 2011-12-31 | 2011-12-31 | Method for cutting silicon ingot by squaring machine |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103434030A true CN103434030A (en) | 2013-12-11 |
CN103434030B CN103434030B (en) | 2015-04-01 |
Family
ID=49687791
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110460013.3A Expired - Fee Related CN103434030B (en) | 2011-12-31 | 2011-12-31 | Method for cutting silicon ingot by squaring machine |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103434030B (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106933183A (en) * | 2015-12-29 | 2017-07-07 | 上海金湖挤出设备有限公司 | A kind of mechanical section bar Chipless cutting machine control system |
CN107116712A (en) * | 2017-05-26 | 2017-09-01 | 杨凌美畅新材料有限公司 | A kind of method for electroplating diamond wire high efficiency cutting silicon chip |
CN109093867A (en) * | 2018-09-26 | 2018-12-28 | 国家电投集团西安太阳能电力有限公司 | Solar energy single crystal silicon rod graph thinning cutting method |
CN110466085A (en) * | 2019-07-24 | 2019-11-19 | 徐州鑫晶半导体科技有限公司 | The method of cutting silicon rod |
CN112026032A (en) * | 2020-09-03 | 2020-12-04 | 阜宁协鑫光伏科技有限公司 | M12 large-size silicon wafer cutting method |
CN112140375A (en) * | 2020-09-28 | 2020-12-29 | 中电化合物半导体有限公司 | Multi-wire cutting system and method for silicon carbide wafer |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0752149A (en) * | 1993-08-19 | 1995-02-28 | Shin Etsu Chem Co Ltd | Production of wafer |
EP0749817A1 (en) * | 1995-06-22 | 1996-12-27 | Shin-Etsu Handotai Company Limited | Wire saw slicing apparatus and slicing method |
JPH11138412A (en) * | 1997-11-14 | 1999-05-25 | Tokyo Seimitsu Co Ltd | Wire saw having fixed abrasive grains and its cutting method of workpiece to be cut |
JP2000042896A (en) * | 1998-07-24 | 2000-02-15 | Tokyo Seimitsu Co Ltd | Cutting method for wire saw |
CN1788965A (en) * | 2004-11-23 | 2006-06-21 | 希特隆股份有限公司 | Apparatus and method for slicing an ingot |
CN101979230A (en) * | 2010-05-21 | 2011-02-23 | 北京天科合达蓝光半导体有限公司 | Method for cutting silicon carbide crystal in sections by using multi-line cutter |
CN102152420A (en) * | 2011-03-24 | 2011-08-17 | 哈尔滨奥瑞德光电技术股份有限公司 | Low-loss oriented cutting method of large-size sapphire crystal blanks |
-
2011
- 2011-12-31 CN CN201110460013.3A patent/CN103434030B/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0752149A (en) * | 1993-08-19 | 1995-02-28 | Shin Etsu Chem Co Ltd | Production of wafer |
EP0749817A1 (en) * | 1995-06-22 | 1996-12-27 | Shin-Etsu Handotai Company Limited | Wire saw slicing apparatus and slicing method |
JPH11138412A (en) * | 1997-11-14 | 1999-05-25 | Tokyo Seimitsu Co Ltd | Wire saw having fixed abrasive grains and its cutting method of workpiece to be cut |
JP2000042896A (en) * | 1998-07-24 | 2000-02-15 | Tokyo Seimitsu Co Ltd | Cutting method for wire saw |
CN1788965A (en) * | 2004-11-23 | 2006-06-21 | 希特隆股份有限公司 | Apparatus and method for slicing an ingot |
CN101979230A (en) * | 2010-05-21 | 2011-02-23 | 北京天科合达蓝光半导体有限公司 | Method for cutting silicon carbide crystal in sections by using multi-line cutter |
CN102152420A (en) * | 2011-03-24 | 2011-08-17 | 哈尔滨奥瑞德光电技术股份有限公司 | Low-loss oriented cutting method of large-size sapphire crystal blanks |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106933183A (en) * | 2015-12-29 | 2017-07-07 | 上海金湖挤出设备有限公司 | A kind of mechanical section bar Chipless cutting machine control system |
CN107116712A (en) * | 2017-05-26 | 2017-09-01 | 杨凌美畅新材料有限公司 | A kind of method for electroplating diamond wire high efficiency cutting silicon chip |
CN107116712B (en) * | 2017-05-26 | 2018-09-11 | 杨凌美畅新材料股份有限公司 | A method of plating silicon wafer cut by diamond wire |
CN109093867A (en) * | 2018-09-26 | 2018-12-28 | 国家电投集团西安太阳能电力有限公司 | Solar energy single crystal silicon rod graph thinning cutting method |
CN110466085A (en) * | 2019-07-24 | 2019-11-19 | 徐州鑫晶半导体科技有限公司 | The method of cutting silicon rod |
CN112026032A (en) * | 2020-09-03 | 2020-12-04 | 阜宁协鑫光伏科技有限公司 | M12 large-size silicon wafer cutting method |
CN112140375A (en) * | 2020-09-28 | 2020-12-29 | 中电化合物半导体有限公司 | Multi-wire cutting system and method for silicon carbide wafer |
Also Published As
Publication number | Publication date |
---|---|
CN103434030B (en) | 2015-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103434030B (en) | Method for cutting silicon ingot by squaring machine | |
CN101979230B (en) | Method for cutting silicon carbide crystal in sections by using multi-line cutter | |
KR101483892B1 (en) | Diamond wire saw device | |
CN101554757A (en) | Cutting method of crystalline silicon blocks | |
CN103072211B (en) | A kind of wiresaw cutting method | |
CN103786274A (en) | Diamond fretsaw device for polycrystalline silicon ingot squaring | |
CN103753716A (en) | Diamond fretsaw device for cutting single crystal silicon rod | |
CN104781045B (en) | Fret saw and cutting off processing method | |
CN103386522A (en) | Solar silicon rod double-wire cutting method and device | |
CN108214952A (en) | A kind of full-automatic distributed polysilicon excavation machine and evolution method | |
CN203579915U (en) | Fret saw machining system capable of being reconstructed | |
CN203622673U (en) | Diamond scroll saw device for cutting off monocrystalline silicon stick | |
CN105643820A (en) | Cutting device of diamond wire mono-crystal silicon rods | |
CN102172997B (en) | Silicon crystal line cutting equipment | |
CN204278268U (en) | Pv600 slicer tilting gauze cutter sweep | |
CN103182747B (en) | Multi-wire sawing wire net system | |
CN204566418U (en) | Numerical control sapphire multistation single line excavation machine cable pulling-pushing device | |
CN201808158U (en) | Solar silicon chip cutting directing bar | |
CN103144208A (en) | Fretsaw cutting method | |
CN103394765B (en) | A kind of seamless pipe inwall processing unit (plant) | |
CN203380718U (en) | Numerical control cutting and grinding machine for slot wedges | |
CN202640588U (en) | Precisely-positioning cutting device of solar battery silicon wafer | |
CN108927908B (en) | Cutting method for wire cutting machine | |
CN203527276U (en) | Chuck flap wheel | |
CN107263750A (en) | The cutting method and three-dimensional structure solar silicon wafers of solar silicon wafers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150401 |