CN103413782B - 一种阵列基板及其制作方法和显示面板 - Google Patents
一种阵列基板及其制作方法和显示面板 Download PDFInfo
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Abstract
本发明提供了一种阵列基板及其制作方法和显示面板,用以解决现有技术中因隔垫物破损导致的不良显示问题。所述方法包括:在衬底基板上同层形成包括扫描线和隔垫物基材的图形;在完成前述步骤的基板上形成栅绝缘层;在完成前述步骤的基板上形成半导体薄膜、掺杂半导体薄膜和源漏金属薄膜,通过构图工艺形成包括有源层、数据线、源电极和漏电极的图形;在完成前述步骤的基板上形成钝化层;利用干法刻蚀法,在隔垫物基材的上方、需要设置隔垫物的位置依次对钝化层、有源层和栅绝缘层进行刻蚀,形成过孔,通过过孔中暴露的隔垫物基材与刻蚀气体形成的电场,牵引反应腔内刻蚀过程中产生的组分沉积到所述隔垫物基材表面,生成隔垫物。
Description
技术领域
本发明涉及液晶显示技术领域,尤其涉及一种阵列基板及其制作方法和显示面板。
背景技术
随着薄膜晶体管液晶显示(TFT-LCD Display)技术的发展和工业技术的进步,液晶显示器件生产成本降低、制造工艺的日益完善,液晶显示技术已经取代了阴极射线管技术显示成为日常显示领域的主流技术;由于其本身所具有的优点,在市场和消费者心中成为理想的显示器件。目前市场上立体显示技术日益兴起,故而解决立体显示技术上的技术缺点,改善成像质量(如减小色偏,降低立体串扰,画面闪烁,增大可视角度等)也日益重要。
高级超维场转换液晶显示技术具有高透过率,可视角度大,容易降低成本等优点,目前已成为高精尖显示领域的主流技术。高级超维场转换技术是平面电场宽视角核心技术,通过同一平面内狭缝电极边缘所产生的电场以及狭缝电极层与板状电极层间产生的电场形成多维电场,使液晶盒内狭缝电极间、电极正上方所有取向液晶分子都能够产生旋转,从而提高了液晶工作效率并增大了透光效率。高级超维场转换技术可以提高TFT-LCD产品的画面品质,具有高分辨率、高透过率、低功耗、宽视角、高开口率、低色差、无挤压水波纹(pushMura)等优点。该技术被广泛应用于高端手机屏幕,移动应用产品,电视等领域。彩色滤光片是液晶显示面板的重要组成部分,也是影响显示效果的关键组件。图1为现有技术中液晶显示面板的结构示意图,从图1中可以看出,所述显示面板包括彩色滤光片基板11、阵列基板12、以及设置在彩色滤光片基板11和阵列基板12之间的液晶层13;其中,所述彩色滤光片基板11上设置有隔垫物110,所述隔垫物110根据实际需要,其高度一般在2~3μm左右。所述隔垫物110的作用是维持盒厚,防止液晶受挤压变形而无法正常显示。现有技术中主要是采用光刻法制作隔垫物来维持盒厚,其制作方法是将隔垫物感光材料涂布于彩色滤光片表面,经过曝光、显影工艺制作出隔垫物。目前制备隔垫物技术中,通常需要经过灰度掩膜板或半透过掩膜板曝光来实现光刻胶的图像化,其中所述光刻胶的主要成分为树脂,而由于树脂的硬度较低,故制得的隔垫物容易碎裂;碎裂的隔垫物无法起到支撑作用,使得周围的液晶受挤压变形,变形的液晶分子的无法正常进行旋转,最终导致液晶显示器的显示效果不良,甚至无法正常显示。
发明内容
本发明实施例提供了一种阵列基板及其制作方法和显示面板,用以解决现有技术中因隔垫物破损导致的不良显示问题,提高液晶显示装置的显示效果。
本发明实施例提供了一种阵列基板的制作方法,所述方法包括:
在衬底基板上同层形成包括扫描线和隔垫物基材的图形;
在完成前述步骤的基板上形成栅绝缘层;
在完成前述步骤的基板上形成半导体薄膜、掺杂半导体薄膜和源漏金属薄膜,通过构图工艺形成包括有源层、数据线、源电极和漏电极的图形;
在完成前述步骤的基板上形成钝化层;
利用干法刻蚀法,在隔垫物基材的上方、需要设置隔垫物的位置依次对钝化层、有源层和栅绝缘层进行刻蚀,形成过孔,通过过孔中暴露的隔垫物基材与刻蚀过程中使用的刻蚀设备反应腔内的刻蚀气体形成的电场,牵引反应腔内刻蚀过程中产生的组分沉积到所述隔垫物基材表面,生成隔垫物。
本发明实施例提供了一种阵列基板,所述阵列基板包括衬底基板、扫描线、隔垫物基材、栅绝缘层、有源层、钝化层、隔垫物和过孔;其中
所述隔垫物基材与扫描线同层设置,位于所述衬底基板的上方;
所述栅绝缘层位于所述隔垫物基材和扫描线的上方;
所述有源层位于所述栅绝缘层上方;
所述钝化层位于所述有源层的上方;
所述过孔贯穿栅绝缘层、有源层和钝化层,且位于所述隔垫物基材的上方、需要设置隔垫物的位置;
所述隔垫物位于所述过孔的内部、隔垫物基材的上方。
本发明实施例提供了一种显示面板,所述显示面板包括上述的阵列基板。
本发明实施例所述的阵列基板的制作过程中,利用干法刻蚀,在隔垫物基材的上方、需要制作隔垫物的位置依次对钝化层、有源层和栅绝缘层进行刻蚀,形成过孔,当刻蚀到隔垫物基材的表面时,隔垫物基材与反应腔内的气体形成电场,在电场的作用下,刻蚀过程中产生的组分沉积到隔垫物基材的表面,生成隔垫物,由于通过这种方式生成的隔垫物相对树脂材料具有硬度大、不易碎裂等优点,因此通过该方法生成的隔垫物能够有效解决因液晶分子受挤压变形而导致的无法显示的问题,从而提高了画面显示质量,增强了液晶显示器的显示效果,提高了用户感受。
附图说明
图1为现有技术中液晶显示面板的结构示意图;
图2为本发明实施例提供的阵列基板的制作方法流程图;
图3和图4为扫描线和隔垫物基材的位置示意图;
图5为完成像素电极制作后的阵列基板的剖面结构示意图;
图6为具有氧化铟锡保护的原有过孔的结构示意图;
图7为本发明实施例提供的阵列基板的剖面结构示意图。
具体实施方式
本发明实施例提供了一种阵列基板及其制作方法和显示面板,用以解决现有技术中因隔垫物破损导致的不良显示问题,提高液晶显示装置的显示效果。
本发明实施例提供的一种阵列基板的制作方法,所述方法包括:
在衬底基板上同层形成包括扫描线和隔垫物基材的图形;
在完成前述步骤的基板上形成栅绝缘层;
在完成前述步骤的基板上形成半导体薄膜、掺杂半导体薄膜和源漏金属薄膜,通过构图工艺形成包括有源层、数据线、源电极和漏电极的图形;
在完成前述步骤的基板上形成钝化层;
利用干法刻蚀法,在隔垫物基材的上方、需要设置隔垫物的位置依次对钝化层、有源层和栅绝缘层进行刻蚀,形成过孔,通过过孔中暴露的隔垫物基材与刻蚀过程中使用的刻蚀设备反应腔内的刻蚀气体形成的电场,牵引反应腔内刻蚀过程中产生的组分沉积到所述隔垫物基材表面,生成隔垫物。
较佳的,在干法刻蚀过程中,利用包括六氟化硫与氯气的第一刻蚀气体对有源层进行刻蚀;利用包括六氟化硫、氯气和氧气的第二刻蚀气体对栅绝缘层和钝化层进行刻蚀。
所述隔垫物基材,为用于在其上方制作隔垫物的金属图案;刻蚀到隔垫物基材时,隔垫物基材表面的金属与第二刻蚀气体发生反应,在该隔垫物基材表面形成金属氯化物。
较佳的,反应腔内温度为30℃~50℃,压强为50~70帕,所述第二刻蚀气体中六氟化硫气体流量为50~200标准毫升/分钟(sccm),氧气的气体流量为100~300sccm,氦气的气体流量为50~100sccm,氯气的气体流量为10~50sccm,等离子刻蚀设备施加的功率为5000~9000瓦时,所述隔垫物的生长速度为
较佳的,制作相互平行的扫描线和隔垫物基材,或者制作相互交叉的扫描线和隔垫物基材;并且,采用相同的工艺、同样的材料制作所述扫描线和隔垫物基材。
同时,也可以先制作所述隔垫物基材,后制作所述扫描线;或者,先制作所述扫描线,后制作所述隔垫物基材。此外,也可以采用不同的金属材料分别制作所述扫描线和隔垫物基材。
所述隔垫物基材的形状可以为线形、方形、圆形、三角形或多边形等任意形状,但至少应保证所述隔垫物基材经过需要设置隔垫物的位置。
下面结合附图,详细介绍本发明实施例提供的阵列基板的制作方法,制作过程中使用的衬底基板为玻璃基板,参见图2,所述阵列基板的制作步骤,具体包括:
第一步S1,参见图3,在玻璃基板31上沉积钼(Mo)、铝(Al)或镉(Cr)等金属层,然后利用构图工艺,同层形成包括扫描线32和隔垫物基材33的图形,制得如图3所示的相互平行的扫描线32和隔垫物基材33,或者如图4所示的相互交叉的扫描线32和隔垫物基材33。值得注意的是,制得的隔垫物基材33的位置对应于需要设置隔垫物的位置;同时,若要制得与扫描线32相互交叉的隔垫物基材33,相处交叉的位置区域应避免与需要设置隔垫物的位置区域重合,以免对扫描线的传输功能造成不良影响。
第二步S2,参见图5,在形成包括扫描线32和隔垫物基材33的图案的基板上沉积氮化硅(SiNx)或氧化硅(SiOx)层,然后利用构图工艺形成栅绝缘层34。
第三步S3,在形成栅绝缘层34的基板上沉积半导体薄膜、掺杂半导体薄膜和源漏金属薄膜,采用半掩膜技术,在栅极绝缘层34上形成有源层35(见图5)、阵列基板的源极(未图示)和阵列基板的漏极(未图示)。
第四步S4,在形成所述有源层35、源极和漏极上方沉积氮化硅薄膜的基板上,形成钝化层36(见图5);并且,参见图6,在该钝化层36上经涂覆光刻胶、曝光显影后,进行刻蚀、剥离等工艺,形成第一类过孔37(见图6)。
第五步S5,使用磁控溅射法在钝化层36上沉积一层氧化铟锡ITO透明导电薄膜,经涂覆光刻胶并曝光显影后,再进行湿刻、剥离,形成像素电极(未图示),且所述像素电极通过位于钝化层36的第一类过孔37直接与阵列基板的漏极连接。
第六步S6,参见图7,在隔垫物基材的上方、需要设置隔垫物的位置,利用干法刻蚀法对钝化层36进行刻蚀,形成第二类过孔38,该过程具体包括:在干法刻蚀过程中,利用包括六氟化硫、氯气和氧气的第二刻蚀气体,在需要设置隔垫物的位置对钝化层36进行刻蚀。该过程中,相对于包括六氟化硫和氯气、而不包含氧气(O2)的第一刻蚀气体,添加有O2的第二刻蚀气体能够提高对SiNx的刻蚀速率和均匀性。
第七步S7,将第二刻蚀气体转换为第一刻蚀气体,对有源层35进行刻蚀,使得第二类过孔38继续向下延深。
第八步S8,由于栅绝缘层34和钝化层36的制作材料相同,因此,将第一刻蚀气体转换为第二刻蚀气体,对栅绝缘层34进行刻蚀,使得第二类过孔38继续向下延深,直至使隔垫物基材33的表面暴露出来。至此,形成了贯穿所述钝化层36、有源层35和栅绝缘层34的第二类过孔38。
第九步S9,隔垫物基材33表面的金属与第二刻蚀气体发生反应,在该隔垫物基材表面形成金属氯化物;同时,通过第二类过孔38中暴露的隔垫物基材与刻蚀过程中使用的刻蚀设备反应腔内的刻蚀气体形成电场,牵引反应腔内刻蚀过程中产生的组分沉积到所述隔垫物基材的表面,然后通过晶体生长的方式,生成隔垫物39。
所述隔垫物39的高度可根据其生长速度和生长时间来控制,一定时间内,生长速度越快,隔垫物39的高度越高;并且,一定生长速度下,生长的时间越长,所述隔垫物39的高度越高。
所述隔垫物39的生长速度和其生长的环境有关,可以通过控制反应腔内的温度、压强以及刻蚀气体的浓度,来控制所述隔垫物39的生长速度,例如,当反应腔内温度为为30℃~50℃,压强为50~70帕,所述第二刻蚀气体中六氟化硫气体流量为50~200sccm,氧气的气体流量为100~300sccm,氦气的气体流量为50~100sccm,氯气的气体流量为10~50sccm,等离子刻蚀设备施加的功率为5000~9000瓦时,所述隔垫物39的生长速度为150~250埃/秒
需指出的是,参见图6,在利用干法刻蚀法进行刻蚀的过程中,由于除第二类过孔38外的其它过孔(如用于连接所述像素电极和漏极的第一类过孔37)处都有氧化铟锡60进行保护;因此,该干法刻蚀过程中不会在除第二类过孔38外的其它过孔中形成隔垫物,因此除第二类过孔38外的其它过孔的功能不会受到影响。
经过上述步骤,即可制得本发明实施例提供的其剖面结构如图7所示的阵列基板。利用所述方法形成的阵列基板中设置有隔垫物,且该隔垫物具有硬度高、不易碎裂等优点,可以有效的解决因隔垫物破损导致的不良显示问题,提高液晶显示装置的显示效果。
本发明实施例提供了一种阵列基板,所述阵列基板包括衬底基板、扫描线、隔垫物基材、栅绝缘层、有源层、钝化层、隔垫物和第二类过孔;其中
所述隔垫物基材与扫描线同层设置,位于所述衬底基板的上方;
所述栅绝缘层位于所述隔垫物基材和扫描线的上方;
所述有源层位于所述栅绝缘层上方;
所述钝化层位于所述有源层的上方;
所述过孔贯穿栅绝缘层、有源层和钝化层,且位于所述隔垫物基材的上方、需要设置隔垫物的位置;
所述隔垫物位于所述第二类过孔的内部、隔垫物基材的上方。
较佳的,所述隔垫物的组成材料包括氯化硅(SiCl4),所述SiCl4为钝化层和栅绝缘层的制作材料与第二刻蚀气体的反应物。
同时,所述隔垫物为柱状隔垫物,位于所述第二类过孔的内部、隔垫物基材的上方,用于起到支撑作用,防止液晶分子受挤压变形而无法正常进行旋转。
较佳的,隔垫物基材的制作材料与扫描线的制作材料相同;并且,所述隔垫物基材既可以与扫描线平行设置,也可以与扫描线交叉设置。
所述隔垫物基材的形状可以为线形、方形、圆形、三角形或多边形等任意形状。
本发明实施例提供了一种利用所述方法制得的阵列基板,具体的,所述阵列基板的结构如图7所示。图7为经过隔垫物基材的阵列基板的剖面结构图,从图7中可以看出,所述阵列基板包括:衬底基板31、隔垫物基材33、栅绝缘层34、有源层35、钝化层36、第二类过孔38、隔垫物39,此外,所述阵列基板还包括在图7中未图示结构,如扫描线、第一类过孔、阵列基板的栅极、阵列基板的源极、阵列基板的漏极和像素电极等。
具体的,所述阵列基板的栅极、扫描线和隔垫物基材33同层设置,均位于所述衬底基板31上方;所述隔垫物基材33的形状为线形,与所述扫描线可以平行设置,二者也可以相互交叉设置;并且,所述阵列基板的栅极、扫描线和隔垫物基材33的制作材料相同,为钼(Mo)、(铝Al)、铬(Cr)或铜(Cu)等金属。
所述栅绝缘层34位于所述阵列基板的栅极、扫描线和隔垫物基材33上方,用于将所述阵列基板的栅极、扫描线和隔垫物基材33与其它层绝缘,其制作材料为氮化硅(SiNx)或氧化硅(SiOx)。
所述有源层35位于所述栅绝缘层34上方。
所述阵列基板的源极与漏极同层设置,均位于所述有源层35的另一侧;
所述阵列基板的源极和漏极的制作材料为导电金属,例如,单一的钼(Mo)、铬(Gr)或者双层的铝铌合金钼(AlNd/Mo)等金属。
所述钝化层36,位于所述阵列基板的源极和漏极的上方,其制作材料与栅绝缘层34的制作材料相同,为氮化硅(SiNx)或氧化硅(SiOx)。
所述像素电极,位于钝化层36上方,并通过钝化层36中的第一类过孔与阵列基板的漏极直接连接;所述像素电极的制作材料为透明导电材料,如氧化铟锡(ITO)等。
所述第二类过孔38,贯穿栅绝缘层34、有源层35和钝化层36,且位于所述隔垫物基材33的上方;
所述隔垫物39,位于所述第二类过孔38的内部、隔垫物基材33的上方;所述隔垫物39为柱状结构,其组成材料主要为氯化硅(SiCl4),此外还包括一些金属氯化物,所述金属氯化物是由隔垫物基材33表面的金属与第二刻蚀气体发生反应生成的。
本发明实施例还提供了一种显示面板,所述显示面板包括上述的阵列基板。
综上所述,本发明实施例一种阵列基板及其制作方法和显示面板。所述阵列基板的制作过程中,利用干法刻蚀,在隔垫物基材的上方、需要制作隔垫物的位置依次对钝化层、有源层和栅绝缘层进行刻蚀,形成过孔,当刻蚀到隔垫物基材的表面时,隔垫物基材表面金属与反应腔内的气体形成电场,在电场的作用下,刻蚀过程中产生的组分沉积到隔垫物基材的表面,生成隔垫物,通过所述方法生成的隔垫物相对树脂材料具有硬度大的优点、不易碎裂等优点,能够保证其周围的液晶分子不会受到挤压变形,使得液晶分子能够正常进行旋转,从而改善了液晶显示器的显示效果,提高了用户感受;同时,将隔垫物制作在阵列基板上,简化了彩色滤光片基板的制作工艺。
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。
Claims (10)
1.一种阵列基板的制作方法,其特征在于,所述方法包括:
在衬底基板上同层形成包括扫描线和隔垫物基材的图形;
在完成前述步骤的基板上形成栅绝缘层;
在完成前述步骤的基板上形成半导体薄膜、掺杂半导体薄膜和源漏金属薄膜,通过构图工艺形成包括有源层、数据线、源电极和漏电极的图形;
在完成前述步骤的基板上形成钝化层;
利用干法刻蚀法,在隔垫物基材的上方中需要设置隔垫物的位置依次对钝化层、有源层和栅绝缘层进行刻蚀,形成过孔,通过过孔中暴露的隔垫物基材与刻蚀过程中使用的刻蚀设备反应腔内的刻蚀气体形成的电场,牵引反应腔内刻蚀过程中产生的组分沉积到所述隔垫物基材表面,生成隔垫物。
2.如权利要求1所述方法,其特征在于,在干法刻蚀过程中,利用包括六氟化硫与氯气的第一刻蚀气体对有源层进行刻蚀。
3.如权利要求1所述方法,其特征在于,在干法刻蚀过程中,利用包括六氟化硫、氯气和氧气的第二刻蚀气体对栅绝缘层和钝化层进行刻蚀。
4.如权利要求3所述方法,其特征在于,在生成隔垫物的过程中,当反应腔内温度为30℃~50℃,压强为50~70帕,所述第二刻蚀气体中六氟化硫气体流量为50~200sccm,氧气的气体流量为100~300sccm,氦气的气体流量为50~100sccm,氯气的气体流量为10~50sccm,等离子刻蚀设备施加的功率为5000~9000瓦时,所述隔垫物的生长速度为150~250埃/秒。
5.一种利用权利要求1所述方法制作的阵列基板,其特征在于,所述阵列基板包括衬底基板、扫描线、隔垫物基材、栅绝缘层、有源层、钝化层、隔垫物和过孔;其中,
所述隔垫物基材与扫描线同层设置,位于所述衬底基板的上方;
所述栅绝缘层位于所述隔垫物基材和扫描线的上方;
所述有源层位于所述栅绝缘层上方;
所述钝化层位于所述有源层的上方;
所述过孔贯穿栅绝缘层、有源层和钝化层,且位于所述隔垫物基材的上方中需要设置隔垫物的位置;
所述隔垫物位于所述过孔的内部、隔垫物基材的上方。
6.如权利要求5所述阵列基板,其特征在于,所述隔垫物的组成材料包括氯化硅。
7.如权利要求5所述阵列基板,其特征在于,所述隔垫物为柱状隔垫物。
8.如权利要求5所述阵列基板,其特征在于,所述隔垫物基材与扫描线的制作材料相同。
9.如权利要求5所述阵列基板,其特征在于,所述隔垫物基材与扫描线平行设置,或者所述隔垫物基材与扫描线交叉设置。
10.一种显示面板,其特征在于,所述显示面板包括权利要求5~9任一权项所述的阵列基板。
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PCT/CN2013/088839 WO2015010416A1 (zh) | 2013-07-23 | 2013-12-09 | 阵列基板及其制作方法和显示面板 |
US14/387,885 US9299727B2 (en) | 2013-07-23 | 2013-12-09 | Array substrate and manufacturing method thereof as well as display panel |
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CN103413782B (zh) * | 2013-07-23 | 2015-08-26 | 北京京东方光电科技有限公司 | 一种阵列基板及其制作方法和显示面板 |
US10134771B2 (en) * | 2014-06-19 | 2018-11-20 | Boe Technology Group Co., Ltd. | Array substrate, method of producing array substrate, and display panel |
TWI613496B (zh) * | 2017-05-08 | 2018-02-01 | 友達光電股份有限公司 | 薄膜電晶體及其形成方法與應用其之畫素結構 |
CN111192906A (zh) * | 2020-01-08 | 2020-05-22 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
CN111308793B (zh) | 2020-02-28 | 2021-08-24 | Tcl华星光电技术有限公司 | 液晶显示面板和液晶显示装置 |
US11367745B2 (en) * | 2020-08-20 | 2022-06-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and methods for sensing long wavelength light |
CN115185129B (zh) * | 2022-06-07 | 2024-02-09 | 深圳技术大学 | 介质膜过孔的刻蚀方法、液晶显示面板及液晶显示器 |
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JP3161528B2 (ja) * | 1998-09-07 | 2001-04-25 | 日本電気株式会社 | 液晶表示パネル |
JP3507771B2 (ja) * | 2000-07-03 | 2004-03-15 | 鹿児島日本電気株式会社 | パターン形成方法及び薄膜トランジスタの製造方法 |
JP4920140B2 (ja) * | 2001-05-18 | 2012-04-18 | ゲットナー・ファンデーション・エルエルシー | 液晶表示装置及びその製造方法 |
KR20030073068A (ko) * | 2002-03-08 | 2003-09-19 | 비오이 하이디스 테크놀로지 주식회사 | 액정표시장치 및 그 제조 방법 |
TWI284754B (en) * | 2004-06-11 | 2007-08-01 | Au Optronics Corp | Liquid crystal display and display panel with photo spacer |
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KR20070009329A (ko) * | 2005-07-15 | 2007-01-18 | 삼성전자주식회사 | 컨택홀 형성 방법 및 이를 이용한 박막 트랜지스터 기판의제조 방법 |
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CN103413782B (zh) * | 2013-07-23 | 2015-08-26 | 北京京东方光电科技有限公司 | 一种阵列基板及其制作方法和显示面板 |
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US20150325591A1 (en) | 2015-11-12 |
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