CN103354247B - Electrolysis system and the method making electrolyte be electrolysed - Google Patents
Electrolysis system and the method making electrolyte be electrolysed Download PDFInfo
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- CN103354247B CN103354247B CN201310219468.5A CN201310219468A CN103354247B CN 103354247 B CN103354247 B CN 103354247B CN 201310219468 A CN201310219468 A CN 201310219468A CN 103354247 B CN103354247 B CN 103354247B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides the electrolysis system alleviating photoproduction carrier and the method making electrolyte be electrolysed.For reducing restructuring loss, coat the diffusing, doping layer in described effect PV element with the dielectric substance pattern contacted reduced between hard contact with effect photovoltaic PV element.Available various patterns, and one or more surfaces of described PV element can be coated with one or more electrolytes.Vertical multi-junction photovoltaic battery can be produced with patterned PV element or battery unit.Although patterned PV element can increase the series resistance of VMJ photovoltaic cell, and pattern one or more surfaces in described PV element can give for produce VMJ photovoltaic cell technique add complexity, but reduce the carrier losses at the diffusing, doping layer in PV element and can improve the efficiency of photovoltaic cell, and therefore the PV service advantages of the manufacture complexity exceeding increase are provided.
Description
The application be international application no be PCT/US2009/053576, China Application No. 200980139221.4 send out
The divisional application of the patent application of bright entitled " there is photovoltaic cell and the related application of treated surface ", the world of original application
The applying date is on 08 12nd, 2009.
Technical field
The subject application request rights and interests to following application case: on August 15th, 2008 file an application and entitled " have through
The solaode (SOLAR CELL WITH PATTERNED CONTACTS) of patterned contacts " No. 61/089,389 U.S.
State's Provisional Application, its request is filed an application on August 5th, 2009 and entitled " has the photovoltaic electric of patterned contact
Pond (PHOTOVOLTAIC CELL WITH PATTERNED CONTACTS) " No. 12/535,952 U.S. patent application case
Priority；File an application on August 6th, 2009 and entitled " there is the vertical multijunction cell (VERTICAL of texturizing surfaces
MULTI JUNCTION CELL WITH TEXTURED SURFACE) " the 12/536th, No. 982 U.S. patent application case, its
Request is filed an application on August 14th, 2008 and entitled " has the vertical multijunction cell (VERTICAL of texturizing surfaces
MULTIJUNCTION CELL WITH TEXTURED SURFACE) " No. 61/088,921 U.S. Provisional Application case excellent
First weigh；File an application on August 6th, 2009 and entitled " there is photovoltaic cell (the PHOTOVOLTAIC CELL of buffer strip
WITH BUFFER ZONE) " the 12/536th, No. 987 U.S. patent application case, its request on August 14th, 2008 propose
Application and the 61/088th of entitled " there is the solaode (SOLAR CELL WITH BUFFER ZONE) of buffer strip " the,
The priority of No. 936 U.S. Provisional Application cases；And file an application and entitled " via vertically tying photovoltaic on August 6th, 2009 more
The electrolysis (ELECTROLYSIS VIA VERTICAL MULTI-JUNCTION PHOTOVOLTAIC CELL) of battery "
12/536, No. 992 U.S. patent application case, its request is filed an application on August 28th, 2008 and entitled " via the most
The electrolysis (ELECTROLYSIS VIA VERTICAL MULTI-JUNCTION SOLAR CELL) of joint solar cell "
The priority of No. 61/092,531 U.S. Provisional Application case.Above with reference to each its entirety be incorporated by reference herein
In.
Background technology
The limited supply of fossil energy and the demand of its increase and the global environment that is associated are destroyed ordered about the whole world and exert
Power makes to utilize the energy and correlation technique diversification.This type of resource a kind of is solar energy, and it uses photovoltaic (PV) technology to be turned by light
It is changed to electricity.Additionally, solar energy can be used for heat produces (such as, in solar furnace, steam generator etc.).Heliotechnics is led to
Often being implemented in a series of PV battery or solaode or its panel, it receives daylight and converts sunlight into electricity, and electricity is subsequently
Can be passed in power network.Reaching major progress in the design and production of solar panel, it increases effect the most effectively
Rate reduces its manufacturing cost simultaneously.Along with developing solaode in hgher efficiency, the size of battery reduces, thus causes adopting
There is provided with solar panel to substitute and gradually decrease and the reality of the competitive rechargeable energy of tool in non-renewable source of height requirement
Property increase.To this end, can dispose as the solar energy collecting systems such as solar collector can be passed to electricity to convert the solar into
The electricity of power net and also gather in the crops heat.Except sending out beyond solar collector technology, also have started to utilize solar collector to open
Send out solaode.
The high intensity solar cell technology being referred to as vertical many knot VMJ solaodes is to have electricity on edge illumination and end
The overall series connected array engaged of the small-sized vertical junction battery unit of contact.Described unique VMJ photovoltaic cell design can be consolidated
Height is provided to force down series resistance output characteristics with having, so that it is ideally suited for the high efficiency in high intensity photovoltaic collector
Energy.Another key feature of VMJ solaode is that it causes the design simplicity of low manufacturing cost.
The experimental of 40 knots being connected in series can be had according in the range of 100 to 2500 sun optically focused intensity
The performance data obtained on VMJ solaode proves the effect of VMJ solaode, wherein output power density under 25 volts
More than 400,000 watts/m2, its efficiency is close to 20%.It will be appreciated that the above-mentioned performance in VMJ solaode is by low manufacturing cost
And low manufacture complexity realizes.Believe that this type of aspect is so that photovoltaic collector system is significantly solving global energy problem
More efficient and the feasible required practical technical performance of cost and the required booster of business efficiency.Additionally, battery effect
Any increase (such as, exporting more watts) of rate can directly reduce collector system size and (such as, be associated with bill of materials
Lower cost), thus produce relatively low $/watt photovoltaic electric power cost.
It should be noted that relatively low $/watt cost substantially uses to solar battery technology and market penetration is relevant, because entirely
Ball energy requirement positive stabilization increase (not only in emerging nation but also in developed country), simultaneously conventional fossil fuel cost just by
Step raises.Additionally, there are to all associated problem (such as, environmental pollution, global warming and with depending on that external fuel is supplied
National security that bad property links together and economic dangerous) the concern extensively increased.To relevant this of public awareness increased
A little environment, economy and safety factors are just being ordered about finding more cost-effective and environmentally friendly rechargeable energy solution
Great interest.In all available regenerative resources, solar energy have in the way of efficient and lasting meet demand
Big potentiality.It is true that receive a year and a day can be from other resource consumptions the most all than the mankind cycle of the earth per a few minutes
The energy of the daylight form that energy is many.
Even if photovoltaic electric power is viewed broadly as preferable rechargeable energy technology, but it is associated, cost can be to use and city
The infiltrative major obstacle in field.Before obtaining the market share and using, electric power based on photovoltaic needs to become to compare conventional power source
(include developing well, the coal burning power of in consumer and substantially cost-effective) tool cost competitive.Additionally, to low one-tenth
The availability of this electric power is considered essence in all global economy bodies；Therefore the terawatt (TW) of photovoltaic power system can be needed
(such as, thousands of 1,000,000,000 watts).Marketing research shows that installed photovoltaic power system must drop to the base cost ability of $ 3/ watt
In the case of without subsidy, tool cost competitive is deserved to be called in big effectiveness sizable application.Owing to installed photovoltaic system cost is worked as
Before more than $ 6/ watt, therefore remain a need for essence cost improvement.
Between the past few decades, attempt reaching relatively low $/watt performance be the primary of most researchs and exploitation in photovoltaic technology
Target.Although described industry spends multi-million dollar to pursue various technology (target is to make photovoltaic energy more cost-effective),
But existing photovoltaic industry remains a need for the biggest subsidy carrys out supports sales, this can be the deleterious situation of market development and industry development
Index.
Currently, silicon solar cell (its keep with the sixties in 20th century when being originally found and develop roughly the same) arrange
～the photovoltaic market of 93%.What the existing photovoltaic industry trying hard to reduce cost depended on low cost waste material level semiconductor silicon deeply can
Conventional solaode is manufactured by property.It should be noted that this kind of tailing level silicon (often referred to as solar energy level silicon) is mainly from wafer
Produce remaining ingot casting head and tail and require better quality first class silicon wafer semiconductor device manufacturer refusal defective
Material.Although photovoltaic sales volume quickly increases, in the past decade annual growth～40%(wherein 2007 annual productions are estimated as 3.8
1000000000 watts (GW), but sales volume is now by the shortage of solar energy level silicon and hindering of higher price.Although first class silicon can be used, but
It is not considered as option, because it makes manufacturing cost increase several times further.
Solaode conventional for typical case, exceeding half manufacturing cost is for producing the wafer for solaode
Original semiconductor polysilicon.Therefore, the solaode of typical 14% efficiency is rated for 0.014W/cm2And in any extra system
Make and have before higher than $ 3/ watt (or $ 0.042/cm2) silicon wafer cost.Therefore, existing photovoltaic industry must propose and solve
Only start silicon materials cost and exceed the fact that benchmark price effectiveness needs of large-scale application.Aspect as a comparison, produces in face
With more than $ 100/cm on the basis of Ji2The semiconductor maker of the microprocessor chip sold can bear and utilize first class silicon wafer
The cost that sheet is associated.
The shortage of solar energy level silicon and photovoltaic industry can not reach important base cost together with being developed for space application
The appearance of the more efficient three-joint solar cell of novelty the most regenerated a large amount of interest to photovoltaic collector.Photovoltaic is assembled
The obvious advantage of device is, owing to using large area not expensive material (glass-mirror reflector or plastic lens) to be assembled by daylight
The implicit costs benefit produced on the expensive solaode that area is much smaller, so that replacing costliness by inexpensive materials
Material.Be designed for the photovoltaic collector of 1000 sun optically focused intensity can need expensive semiconductor silicon to significantly reduce～
99.9%, this means that the VMJ solaode of 1000MW uses the current desired equal amount wanted of conventional solaode of 1MW to hold high
Your semiconductor silicon is possible.Pragmatism ground, this practical methods being considered to relax arbitrary silicon shortage problem.
Quite a lot of work majority of solar collector is focused on the silicon concentrator solar electricity being developed for high intensity
Pond is designed；Although having done a large amount of fruitful development during 20 century 70 energy crisis, but its knot at that time
Fruit in cost benefit show the golden mean of the Confucian school and unsatisfactory.Carry out initially for the intensity with 500 sun optically focused
The research that silion cell is target of the collector system of operation and exploitation；But, when overcoming, in trial, the solar energy studied
When running into unsolved exploitation difficulty during series resistance problem in battery design, described target is reduced to 250 sun optically focused.
For example, the loss of the high series resistance in concentrator solar cell was once considered conventional VMJ solar battery technology really
Have pointed out and settled subject matter.It should be noted that the significant fraction solaode manufacture for collector technological development
Getting up considerably complicated and expensive, it is by 6 or 7 high-temperature step (> 1000 DEG C) and 6 or 7 photoetching coverage steps.This complexity
It is limited to not higher than 250 sun owing to the maximum intensity preferably the designed operation minimized in substantially these being designed gather
The An attempt of design of the series resistance loss of light.This kind of complexity and the cost that is associated hinder collector technology and the solar energy that is associated
The essence development of battery technology, and promote as the development of the substitute technologies such as thin film solar cell technologies.
Vertical many knot VMJ solar battery technologies are substantially different from conventional concentrator solar cell.Described VMJ solar energy
Battery technology provides at least two advantage relative to other technology: (1) its need not photoetching, and (2) can use more than 1000 DEG C
At a temperature of single high temperature diffusion step form two knots.Therefore, relatively low manufacturing cost is natural.Additionally, can
With high-intensity operation VMJ solaode；Such as with 2500 sun optically focused operations.From this kind of operation it is clear that series electrical
Resistance is in VMJ solar cell design and is not a problem；Even it is not a problem when intensity is higher than the order of magnitude of conventional wisdom yet,
Even if this is not economically feasible.Additionally, the electric current density of the VMJ battery unit under 2500 sun optically focused is generally near
70A/cm2, this is the radiation levels can being substantially harmful to most solaodes based on other technology.
As it has been described above, again the interest of photovoltaic collector is passed through III to V material mainly due to three-joint solar cell
The development that (comprising gallium (Ga), phosphorus (P), arsenide (As), indium (In) and germanium (Ge)) makes.Three junction batteries can use 20 to 30
The different quasiconductors that series connection is layered on germanium wafer: be grown on the warp in metal organic chemical vapor deposition (MOCVD) reactor
Doping GaInP2And GaAs layer, the quasiconductor of each of which type will have causes it to absorb daylight most effectively with a certain color
Characteristic band-gap energy.Described semiconductor layer selects to absorb close to whole solar spectrum through meticulous, thus from as much as possible
Daylight generates electricity.These many knot devices are the most efficient solaodes, and it is in appropriateness solar energy collecting and experiment
The record that 40.7% efficiency is high is reached under the conditions of room.But owing to it manufactures costly, therefore it needs to be applied to photovoltaic gathering
In device.
But, demand and cost thereof to III to V solar cell material the most quickly increase.As an example, at 12 months
In (12/2006 to 12/2007), the cost of pure gallium increases to $ 680/kg from about $ 350/Kg and germanium price substantially increases to $
1000 arrive $ 1200/Kg.Increase to close to $ 1000/Kg in 2007 at the indium that price in 2002 is $ 94/Kg.Furthermore it is contemplated that it is right
The demand of indium along with some new companies started in 2007 to thin film CIGS(CuInGaSe) the extensive system of solaode
Make and continue to increase.Additionally, indium is widely used in forms the indium tin oxide shape for liquid crystal display and massive plate monitor
The rare element of the transparent electrical coating of formula.Practically, these materials seem not to solve dominant world energy problem provides terawatt (TW)
Feasible long-term photovoltaic (PV) solution required for low cost electric power.
Although area is 0.26685cm2III to V semiconductor solar cell can produce the power of 2.6 watts (or about
10W/cm2), and estimated that this kind of technology finally can produce electricity with 8 to 10 points/kWh, but it is approximately similar to the electricity from conventional source
Price, it may be desired to analyze further and support that this kind is estimated.But, the quasiconductor that VMJ solaode use cost is minimum
Material is showed more than 40W/cm by low cost manufacture under the intensity of 2500 sun optically focused2Output.(this output work
Rate is more than 400,000W/m2.) in addition to complicated PV technology based on advanced material, solar battery technology based on Si is at light
Volt element and application keep substantially ascendancy.If additionally, the whole world needs appearance, that applies in the extensively whole world is predictable
In future, silicon is to be capable of supply that unique semi-conducting material with existing industry basis of terawatt (TW) photovoltaic electric power.
Summary of the invention
Simplification summary presented below is to provide the basic comprehension in terms of more described herein.This summary and non-exhaustive generally
State, the most unvested identification key/critical elements or portray the scope of various aspect described herein.Its sole purpose is to simplify shape
Formula presents the preamble being described in more detail that some concepts are used as presenting after a while.
Can be at any sort photovoltaic cell (such as, solaode, thermophotovoltaic or excited by the lasing light emitter of photon
Battery) in utilize aspect described herein or feature and related advantages, such as reduce the restructuring loss of photoproduction carrier.It addition, also
The aspect of the present invention can be implemented in other class energy conversion cell (such as, beta voltaic cell (betavoltaic cell)).
The present invention alleviates described vertical many knots via the veining on the optical receiving surface of vertical many knot VMJ photovoltaic cells
Body weight group loss in VMJ photovoltaic cell.Described texture can be in chamber connected in star (such as " V " shape cross-sectional configuration, " u "-shaped cross section
Configuration etc.) form, be approximately perpendicular to stacking including the plane of this kind of cross-sectional configuration and form the battery of VMJ photovoltaic cell
The direction of unit.In an aspect, including substantially repeating the flat of cross section (direction that such as, transversal groove extends thereon)
Face is approximately perpendicular to stack the direction of described battery unit.This arranges the p+ promoting that refraction light is channeled out VMJ photovoltaic cell
And n+ diffusing, doping district, in the volume reduced, produce required carrier simultaneously.Correspondingly, incident illumination can include described cross section
Configure and be approximately perpendicular to stack in the plane in the described direction of described battery unit and reflect.
It will be appreciated that the veining of the VMJ photovoltaic cell of the present invention PN junction orientation and/or with mutual two of incident illumination
In aspect different from the prior art for conventional silicon photovoltaic battery texture.For example, conventional silicon photovoltaic battery is generally through stricture of vagina
Physics and chemistry is to stop penetrating of light so that absorb more longer wavelength to realize more preferable carrier closer to PN junction (horizontal location)
Electric current collection, and thus alleviate the difference spectra response of longer wavelength in solar spectrum.Compare down, this including in the present invention
Vertical junction and provide in solar spectrum longer wavelength enhanced spectrum response VMJ photovoltaic cell in need not.
In particular aspects, the result of the groove (such as, V groove) implementing the present invention is to alleviate body by reduction volume
Restructuring loss-(contrary with the conventional solar energy surface using veining, this reduces reflection, or causes the light being reflected or reflecting
Become closer to knot).In particular, what described VMJ photovoltaic cell had represented for both short wavelength and long wavelength is more preferable
Carrier electric current collection, wherein said short wavelength response is owing to eliminating the horizontal junction of high doped at top surface, and described long wave
Long response is the collection efficiency of the enhancing due to vertical junction.) as another example, if substituting the chamber connected in star stricture of vagina of the present invention
Reason, is embodied as a part for VMJ photovoltaic cell by other texture (such as, random, pyramid, vaulted and similar convex configuration), that
Incident illumination becomes reflecting in all directions, thus produces the effect that light absorbs and therefore produces reduction in p+ and n+ diffusion region
Rate.
According to correlation technique, initially VMJ photovoltaic cell, each of which battery can be formed by stacking multiple battery units
Itself can include multiple parallel semiconductor substrates or the layer being stacked.Each layer can be adulterated by the impurity forming PN junction and partly lead
Body material is constituted, and farther includes to strengthen " internal (built in) " electrostatic drift that the minority carrier towards this kind of PN junction moves
Move field.Subsequently, integrated this type of battery unit multiple is to form VMJ photovoltaic cell.It follows that connecing at described VMJ photovoltaic cell
Receive on the surface of light, chamber connected in star (such as, via scribing saw) can be formed, including described cross-sectional configuration plane substantially
It is perpendicular to the direction that stacking forms the described battery unit of described VMJ photovoltaic cell.Correspondingly, incident illumination can include described heavy
Multiple cross-sectional configuration and being approximately perpendicular to stack in the plane in the described direction of described battery unit and reflect (such as, thus for
Given depth supply higher absorption.) additionally, the various rear table with reflectance coating can be implemented in conjunction with the various aspects of the present invention
Face and side surface.
In related fields, the groove surfaces of the present invention is improved carrier further and is collected, and reduces the loss of body weight group simultaneously.Lift
For example, described p+nn+(or n+pp+ can be perpendicular to) battery unit is to position described V groove, longer to increase in solar spectrum
The optical absorption path of wavelength and light is absorbed can be by the nXing Ti district being substantially confined to p+nn+ battery unit.Additionally,
This type of V groove can have through applying with the ARC improving the absorbing incident light in battery.
In related fields, the present invention subtracts via the veining on the optical receiving surface of vertical many knot VMJ photovoltaic cells
Body weight group loss in light described vertical many knot VMJ photovoltaic cells.Described texture can be in chamber connected in star (as " V " shape cross section is joined
Put, " u "-shaped cross-sectional configuration etc.) form, be approximately perpendicular to stacking including the plane of this kind of cross-sectional configuration and form VMJ
The direction of the battery unit of photovoltaic cell.In an aspect, including substantially repeating cross section, (such as, transversal groove is thereon
Extend direction) plane be approximately perpendicular to stack the described direction of described battery unit.This arranges and promotes to guide refraction light
Leave p+ and the n+ diffusing, doping district of VMJ photovoltaic cell, in the volume reduced, produce required carrier simultaneously.Correspondingly, incident
Light can reflect in including the plane in described cross-sectional configuration and the described direction that is approximately perpendicular to stack described battery unit.
It will be appreciated that the veining of the VMJ photovoltaic cell of the present invention PN junction orientation and/or with mutual two of incident illumination
In aspect different from the prior art for conventional silicon photovoltaic battery texture.For example, conventional silicon photovoltaic battery is generally through stricture of vagina
Physics and chemistry is to stop penetrating of light so that absorb more longer wavelength to realize more preferable carrier closer to PN junction (horizontal location)
Electric current collection, and thus alleviate the difference spectra response of longer wavelength in solar spectrum.Compare down, this including in the present invention
Vertical junction and provide in solar spectrum longer wavelength enhanced spectrum response VMJ photovoltaic cell in need not.
In particular aspects, the result of the groove (such as, V groove) implementing the present invention is to alleviate body by reduction volume
Restructuring loss-(contrary with the conventional solar energy surface using veining, this reduces reflection, or causes the light being reflected or reflecting
Become closer to knot).In particular, what described VMJ photovoltaic cell had represented for both short wavelength and long wavelength is more preferable
Carrier electric current collection, wherein said short wavelength response is owing to eliminating the horizontal junction of high doped at top surface, and described long wave
Long response is the collection efficiency of the enhancing due to vertical junction.) as another example, if substituting the chamber connected in star stricture of vagina of the present invention
Reason, is embodied as a part for VMJ photovoltaic cell by other texture (such as, random, pyramid, vaulted and similar convex configuration), that
Incident illumination becomes reflecting in all directions, thus produces the effect that light absorbs and therefore produces reduction in p+ and n+ diffusion region
Rate.
According to correlation technique, initially VMJ photovoltaic cell, each of which battery can be formed by stacking multiple battery units
Itself can include multiple parallel semiconductor substrates or the layer being stacked.Each layer can be adulterated by the impurity forming PN junction and partly lead
Body material is constituted, and farther includes to strengthen " internal " electrostatic dispersion field that the minority carrier towards this kind of PN junction moves.Subsequently,
Integrated this type of battery unit multiple is to form VMJ photovoltaic cell.It follows that on the surface receiving light of described VMJ photovoltaic cell
On, chamber connected in star (such as, saw) can be formed via scribing, the plane including described cross-sectional configuration is approximately perpendicular to stacking
Form the direction of the described battery unit of described VMJ photovoltaic cell.Correspondingly, incident illumination can include that described repetition cross section is joined
The plane in the described direction put and be approximately perpendicular to stack described battery unit reflects and (such as, thus supplies for given depth
Answer higher absorption.) additionally, various rear surfaces and the side table with reflectance coating can be implemented in conjunction with the various aspects of the present invention
Face.
In related fields, the groove surfaces of the present invention is improved carrier further and is collected, and reduces the loss of body weight group simultaneously.Lift
For example, described p+nn+(or n+pp+ can be perpendicular to) battery unit is to position described V groove, longer to increase in solar spectrum
The optical absorption path of wavelength and light is absorbed can be by the nXing Ti district being substantially confined to p+nn+ battery unit.Additionally,
This type of V groove can have through applying with the ARC improving the absorbing incident light in battery.
In another aspect, the present invention supply at the end layers of high voltage silicon vertically many knot VMJ photovoltaic cells one or
More than one buffer strip, to provide the barrier protecting described active layer to provide ohm contact simultaneously.This type of buffer strip can be in additionally
Be stacked in above the end layer of described VMJ photovoltaic cell and/or lower section non-active layer arrange form.Described VMJ photovoltaic electric
Pond itself can include multiple battery unit, and each of which battery unit uses some active layers (such as, three) to form PN junction
And " internal " electrostatic dispersion field (its minority carrier strengthened towards described PN junction moves).
Therefore, can protect and be positioned at the various of (and as part of its battery unit) at any end of VMJ photovoltaic cell
Active layer (such as, nn+ and/or p+n knot) from the stress of noxious forms and/or strain (such as, at described VMJ photovoltaic cell
Make and/or operation during can induce in described VMJ photovoltaic cell thermal mechanical pressure, torsion, moment, shearing force
Deng).Additionally, described buffer strip can be formed via the material (metal or quasiconductor) with substantially low resistivity ohmic contact, make
Obtaining it will not contribute any essence series resistance to lose in the operating condition in described photovoltaic cell.For example, can lead to
Cross and use the low-resistivity silicon wafer of p-type doping to form described buffer strip so that use when manufacturing described VMJ photovoltaic cell
During other p-type dopant (such as, aluminium alloy), it will alleviate the risk of doping automatically (with the n that employing can produce undesirably pn-junction
Type wafer compares-when target is to produce substantially low resistivity ohmic contact).It will be appreciated that the present invention can be embodied as any sort
A part for photovoltaic cell (such as, solaode or thermophotovoltaic).Additionally, it is possible to the aspect of the present invention is implemented on it
In its class energy conversion cell (such as, beta voltaic cell).
In related fields, described buffer strip can the form at edge on the surface of end layer in battery unit, it fills
When protection border and the further framework forming described VMJ photovoltaic cell of this kind of active layer is so that carrying and transport.Equally,
By realizing the firm grip to described VMJ photovoltaic cell, this kind of edge formation also allows for relevant to anti-reflective coating
Operation (such as, can be executed when maintaining described battery (such as, by the mechanical grip to it) the most securely equably
Add coating).Additionally, physically described buffer strip (such as, can be positioned at the end of described VMJ photovoltaic cell during depositing
Non-active layer) be positioned adjacent to other buffer strip, and thus easily can move in the case of not destruction battery unit
Except the arbitrary undesirably dielectric coating material being by mistake penetrated down in contact surface.Can be by substantially low-resistivity and height
The silicon (such as, about 0.008 " thickness) of doping forms described buffer strip.This kind of buffer strip can contact subsequently by VMJ photovoltaic electric
The conductive lead wire that pond another VMJ photovoltaic cell from photovoltaic battery array is split or separated.
According to another further aspect, described buffer strip can be sandwiched between the active layer of electric contact and described VMJ photovoltaic cell.This
Outward, this type of buffer strip can have the thermal expansion character of the substantially matching thermal expansion character in described active layer, thus alleviates performance
Lower one's standard or status (alleviating of the stress/strain that such as, welding or soft soldering are caused when going between during fabrication).For example, can use
It is assigned in the thermal coefficient of expansion (3x10 of all action battery unit–6/ DEG C) the low-resistivity silicon layer of high doped.Correspondingly, may be used
Thering is provided the strongest ohm contact to described action battery unit, it additionally alleviates and is caused by welding/soft soldering and/or from tactile
The stress problem of the not matched coefficients of thermal expansion in some material.Other example includes introducing metal level, such as tungsten (4.5x10–6/
DEG C) or molybdenum (5.3x10–6/ DEG C), it is because being approximately similar to activated silica (3x10–6/ DEG C) thermal coefficient of expansion of p+nn+ battery unit
And be chosen.Can be in not welding or soft soldering applying in the case of high intensity solar cell or photovoltaic cell introduce harmful stress
To the outer layer of low-resistivity silicon layer of described buffer strip or be applied to be fused to the metal level of the electrode of described action battery unit
Metallization, wherein this type of outer layer be used as ohm contact；Rather than with the battery unit section of other battery cells in series.
The various aspects of the present invention can be embodied as the Miller with the orientation of the crystal face that is associated for described buffer strip
A part for the wafer of index (111), it is considered than (100) crystal orientation being commonly used to fabricate effect VMJ battery unit
Silicon is the most higher and etching is slower.Correspondingly, low-resistivity silicon layer can have the crystallization with described action battery unit calmly
To different crystal orientations, wherein by using this kind of alternative orientations, it is provided that have the dress of the mechanical strength/terminal contacts of improvement
Put.In other words, compared with the end layer that non-active (111) orient, the edge of the battery unit that (100) orient generally etches relatively
Soon and substantially repair the angle of the action battery unit with this kind of crystal orientation, thus produce and have for welding or additionally connect
Connect the more stable apparatus structure of the more high mechanical properties of terminal contacts.
In related fields, the present invention uses vertical many knot VMJ photovoltaic cells, with via for compound (such as, water)
The incident illumination of electrolysis and electric current produce the electrolysis (such as, hydrogen and the generation of oxygen) that described compound is provided.This kind of VMJ includes
With multiple battery units of electrolyte contact, each of which battery unit uses some active layers (such as, three) to form PN
Knot and " internal " electrostatic dispersion field (its minority carrier strengthened towards described PN junction moves).Can by described VMJ partly or complete
Entirely immerse in water/electrolyte, as a part for transparent utensil (such as, glass or plastics), wherein run into this kind of VMJ when light
Time, multiple electrolysis electrode (anode/cathode) can be formed in described whole VMJ.Whenever reaching the threshold voltage of electrolysis, at this
Between class electrolysis electrode, the electric current of flowing flows through water and breaks water into hydrogen and oxygen.Generally, this kind of decomposition threshold voltage position
With division water and generation hydrogen and oxygen in the range of 1.18 volts to 1.6 volts.It will be appreciated that by multiple battery unit (examples of stacking
As, the multiple batteries being connected in series) can reach higher voltage.Additionally, can use further catalyst additive to increase hydrogen and
Oxygen evolution efficiency, and reduce the quasiconductor corrosion caused by high electrode current potential and electrolyte solution.Additionally, described electrolyte can
Formed by the arbitrary solution being not adversely affected by being formed the stack layer of described VMJ photovoltaic cell and (such as, iridium, its binary close
The material based on iridium that gold or its oxide are made).
In related fields, described VMJ is partially or even wholly immersed in water/electrolyte, and may be included in described VMJ
The silicon protruding metal region (example produced with increase and water and the contact area of electrolyte and enhancing hydrogen protruding above of photovoltaic cell
As, VMJ electrode).For example, this type of outthrust can be some millimeters.According to another further aspect, can make at VMJ photovoltaic cell
Period is by the thinnest electrode catalyst agent material (such as, platinum, RuO2Or titanium) layer is incorporated in described metallization to strengthen hydrogen
Formed.Additionally, select electrode catalyst agent material to there is sizable motility, because described for electrode catalyst agent material
Metallized n+ negativity () side may differ from p+ positivity (+) side.It will be appreciated that those skilled in the art is readily able to select
Produce strengthening hydrogen and stable and compatible with the making of VMJ photovoltaic cell catalyst material.It is also possible to use ultrasound unit is come
Release remains attached to the produced oxygen on electrolysis electrode or hydrogen bubble.It will be appreciated that the flowing of electrolyte also can be removed this type of institute
The bubble formed.
According to correlation technique, introduce electrolyte solutions in the container containing VMJ photovoltaic cell, in the above-described container will
Described VMJ fully or substantially submergence.Then make this kind of system stand incident illumination and electric current flowing produces from described VMJ.Described VMJ
On incident illumination can produce electric current in whole electrolyte solution, and wherein meet or exceed the threshold value (example for making water decomposition
As, about 1.6 volts) any position, the electrolysis of water occurs.For example, cross over each battery unit and can produce the electricity of 0.6 volt
Press (such as, for 1000 sun optically focused) and between the first battery unit district and the 3rd battery unit district, electrolysis can occur.
Correspondingly, the various collecting mechanisms (such as, barrier film, sieve plate etc.) in order to collect produced oxygen and hydrogen can be positioned electricity
Between the district of the decomposition that pressure exceedes the threshold value (such as, about 1.6 volts) for water electrolysis and expection water.Should be appreciated that, it is possible to by this
Class collecting mechanism is positioned in the downstream flow of electrolyte to collect produced oxygen and hydrogen.
For addressing relevant purpose on realizing, herein in conjunction with following explanation and accompanying drawing, some illustrative aspect is described.These sides
Face represents the various modes that can put into practice, and all described aspects are set to be covered by herein.Say in detailed below when combining graphic consideration
Time bright, further advantage and novel feature may become apparent from.
Accompanying drawing explanation
Fig. 1 graphic extension according to an aspect of the present invention as the veining or recessed of the vertical parts tying VMJ batteries more
The perspective schematic view of rooved face.
Fig. 2 graphic extension is for implementing the exemplary cross section of the groove of the present invention.
Fig. 3 graphic extension is according to an aspect of the present invention in order to form the battery of the VMJ photovoltaic cell with groove surfaces
The exemplary stacking of unit.
Fig. 4 graphic extension is partly formed the particular battery unit of VMJ photovoltaic cell according to an aspect of the present invention.
Fig. 5 graphic extension produces the VMJ with groove surfaces according to an aspect of the present invention with the group loss that loses weight
Correlation technique.
Fig. 6 graphic extension is according to an aspect of the present invention as the cloth of buffer strip of parts of much more vertical knot VMJ batteries
The schematic block diagram put.
Fig. 7 graphic extension its array according to a particular aspect of the invention can form the battery unit of VMJ photovoltaic cell
Particular aspects.
Fig. 8 graphic extension is in the edge formation on the surface of the battery unit being positioned at the either end of VMJ photovoltaic cell
The exemplary cross section of the buffer strip of form.
Fig. 9 is illustrated at the end layer of high voltage silicon vertically many knot VMJ photovoltaic cells and uses buffer strip to provide guarantor
Protect the correlation technique of the barrier of its active layer.
Figure 10 graphic extension includes the modularity cloth that can implement to have photovoltaic (PV) battery of the VMJ photovoltaic cell of buffer strip
The schematic cross section of the solar energy molectron put.
Figure 11 graphic extension uses the vertical electrolysis system tying VMJ battery for water electrolysis according to an aspect of the present invention
Schematic block diagram.
Figure 12 graphic extension is the prominent metal level outthrust that can promote electrolysis process from the surface of described VMJ photovoltaic cell.
Figure 13 graphic extension crosses over described VMJ and as the voltage gradient in the whole stacking battery of its part.
Figure 14 graphic extension is according to an aspect of the present invention via the method for water electrolysis of VMJ photovoltaic cell.
Figure 15 graphic extension can be used for the VMJ photovoltaic cell of the electrolysis of the present invention.
Figure 16 graphic extension single battery unit, multiple described single battery unit form the electrolysis for the present invention
VMJ。
Figure 17 graphic extension has groove surfaces to improve the VMJ photovoltaic cell of the efficiency of electrolysis process.
Figure 18 graphic extension is used for the exemplary groove on the surface of the VMJ photovoltaic cell of electrolysis according to an aspect of the present invention
Change.
Detailed description of the invention
Describe the present invention referring now to graphic, wherein refer to identical in the Ref. No. that all graphic middle uses are identical
Element.For illustrative purposes, in the following description, a large amount of detail is listed to provide the thorough reason to the present invention
Solve.It may be evident, however, that the present invention can be put into practice in the case of there is no these details.In other example, with block diagram
Form shows well-known structure and device, to promote to describe the present invention.
This explanation, appended claims or graphic in, term "or" is set means inclusive "or" and nonexcludability
"or".It is to say, " X uses A or B " set mean described natural inclusive arrangement in any one, unless otherwise prescribed or
Will become apparent from from the context.If it is to say, X uses A, X to use B, or X uses both A and B, then in examples detailed above
In be satisfied by " X uses A or B " in the case of any one.Additionally, article " (a) " and " used in this specification and accompanying drawing
(an) " generally should be construed as meaning " one or more ", refer to odd number shape unless otherwise prescribed or the most substantially
Formula.
Additionally, the nomenclature of the impurity dopant material relative to the part as photovoltaic cell described herein, for mixing
Miscellaneous donor impurity, is used interchangeably term " N-shaped " and " N-type ", and term " n+ type " and " N+ type " are the most such.Miscellaneous for doping receptor
Matter, term " p-type " and " p-type " be also used interchangeably, and term " p+ type " and " P+ type " the most such.For clarity, doping class
Type also occurs with abbreviated form, and such as, N-shaped is marked as N, p+ type and is indicated as P+ etc..Multilamellar photovoltaic element or battery unit
Being marked as one group of letter, each of which indicates the doping type of described layer；For example, p-type/N-shaped knot is marked as PN,
And p+ type/N-shaped/n+ type knot is indicated by P+NN+；The labelling of other knot combination is also observed this and is explained.
Fig. 1 graphic extension according to an aspect of the present invention as the groove of the vertical parts tying VMJ photovoltaic cells 120 more
The perspective schematic view on 100 surfaces.This veining 100 arranges that making to reflect light can be routed away from p+ and n+ diffusing, doping
District, produces required carrier simultaneously.Correspondingly, incident illumination can reflect in the plane 110 have normal vector n.This kind of plane 110
It is parallel to the PN junction plane of VMJ photovoltaic cell 120, and the cross-sectional configuration of groove 100 can be included.Additionally, can be by anti-reflective coating
Layer is applied to the surface of veining 100 to increase the absorbing incident light in described battery.In other words, the orientation of plane 110 is big
Cause to be perpendicular to the direction of stacked battery cells 111,113,115.Should be appreciated that, it is possible to contain other non-vertically oriented (such as, with respectively
The crystal face that kind of angle exposes) and this type of aspects all be considered to fall within the scope of the invention.
Fig. 2 graphic extension is for the exemplary texture by the surface groove of described VMJ photovoltaic cell, described VMJ photovoltaic
Battery receives light on said surface.This kind of grooveization can be in the form of chamber connected in star, for example, as having various angle
(such as, 0 ° < < 180 °) " V " shape cross-sectional configuration, " u "-shaped cross-sectional configuration etc., flat including described cross-sectional configuration
Face is approximately perpendicular to the direction of the battery unit of the stacking described VMJ photovoltaic cell of formation and/or is roughly parallel to described VMJ photovoltaic
The PN junction of battery.It will be appreciated that the veining 210,220,230 of the VMJ photovoltaic cell of the present invention PN junction orientation and/or with enter
Penetrate the mutual upper different from the prior art for conventional silicon photovoltaic battery texture of light.For example, conventional silicon photovoltaic battery leads to
The most textured to stop penetrating of light to absorb more longer wavelength to realize more preferably closer to PN junction (horizontal location)
Carrier electric current collection, and thus alleviate in solar spectrum longer wavelength difference spectra response.Comparing down, this is in the present invention
Include vertical junction and provide in solar spectrum longer wavelength enhanced spectrum response VMJ photovoltaic cell in be not required to
Want.
But, an aspect of the groove (such as, V groove) for implementing the present invention is to alleviate body by reduction volume
Restructuring loss-(contrary with the conventional solar energy surface using veining, this reduces reflection, or causes the light being reflected or reflecting
Become closer to knot).In particular, VMJ photovoltaic cell has represented the more preferable carrier for both short wavelength and long wavelength
Electric current collection, wherein said short wavelength response is owing to eliminating the horizontal junction of high doped at top surface and described long wavelength response
It it is the collection efficiency of the enhancing due to vertical junction.) as another example, if substituting the chamber connected in star texture of the present invention, by it
Its texture (such as, random, pyramid, vaulted and similar convex configuration) is embodied as a part for VMJ photovoltaic cell, then incident illumination
Become reflecting in all directions, thus in p+ and n+ diffusion region, produce the efficiency that light absorbs and therefore produces reduction.Ying Liao
Solving, this type of " U " and " V " shape groove also fall within the scope of the invention for exemplary and other configuration in nature.
Fig. 3 graphic extension can implement on side 345 according to an aspect of the present invention groove texture battery unit 311,
313, the layout of 317.As explained before, VMJ photovoltaic cell 315 itself by multiple overall engage battery unit 311,313,
317(1 to k, k are integer) formed, each of which battery unit itself is formed by the substrate stacked or layer (not shown).Citing comes
Saying, each battery unit 311 can include the multiple parallel semiconductor substrates being stacked, and the quasiconductor material adulterated by impurity
Material is constituted, the semi-conducting material of described impurity doping formed PN junction and strengthen towards the minority carrier of this kind of PN junction move " interior
Portion " electrostatic dispersion field.It will be appreciated that various N+ types and p-type doped layer formation can be embodied as a part for described battery unit
And this type of layout also falls within the scope of the invention.
Correspondingly, the texture on optical receiving surface 345 promotes that refraction light is routed away from p+ and n+ diffusing, doping district, simultaneously
Produce required carrier.Therefore, incident illumination and can be approximately perpendicular to stack described in described battery unit including cross-sectional configuration
The plane in direction (such as, being perpendicular to vector n) reflects.
The particular aspects of Fig. 4 graphic extension battery unit, its array can form the veining groove with the present invention
VMJ photovoltaic cell.Battery unit 400 is included in almost parallel layout the layer 411,413,415 being stacked.This type of layer
411,413,415 can farther include the semi-conducting material that impurity adulterates, its middle level 413 is a kind of conductivity type and layer 411
For opposite conductivity rate type-to define PN junction at intersection point 412.Equally, layer 415 can be the conductivity type identical with layer 413-
In addition by the highest impurity concentration, thus produce and strengthen the internal electrostatic drift that the minority carrier towards PN junction 412 moves
Move field.This type of battery unit entirety can be bonded together form VMJ photovoltaic cell and the various aspects according to the present invention are recessed
The surface of channelization.
According to another further aspect, for being made described VMJ photovoltaic cell by multiple batteries 400, initially can by identical PNN+(or
NPP+) knot is formed as to high resistivity (such as, higher than the 100ohm-cm) flat wafer of N-type (or p-type) silicon (having about 0.008
The thickness of inch) in the degree of depth of about 3 to 10 μm.Subsequently, by this type of PNN+ wafer stacking together, wherein flake aluminum is inserted it
Between, the PNN+ knot of each of which wafer and crystal orientation can orient with equidirectional.It is also possible to use aluminum-silicon congruent melting alloy,
Or there is the metal of the substantially matching hot coefficient in silicon, such as molybdenum or tungsten.It follows that described silicon wafer can be fused with aluminum interface
Together so that the molectron of stacking can be bonded together.Can also additionally be stacked in the end layer of described VMJ photovoltaic cell
The form supply that the non-active layer of top and/or lower section is arranged has the buffer strip of substantially low-resistivity, thus implements to protect institute
Stating active layer (such as, can be during the making and/or operation of VMJ photovoltaic cell from the stress of noxious forms and/or strain
The thermal mechanical pressure of induction, torsion, moment, shearing force etc. in described VMJ photovoltaic cell) barrier.Then can be by this kind of battery
Surface groove with lose weight group loss, as described in detail by above.It will be appreciated that may be used without other material, such as germanium
And titanium.Equally, it is possible to use aluminum-silicon congruent melting alloy.
Fig. 5 graphic extension is by the correlation technique 500 of the surface groove receiving light of VMJ photovoltaic cell.Although herein will
Described exemplary methods graphic extension and be described as a series of block representing various event and/or action, but the present invention is not subject to
The illustrated order of this type of block limits.For example, according to the present invention, in addition to order illustrated herein,
Some actions or event can in different order and/or occur with other action or event simultaneously.Additionally, implement according to the present invention's
Method may be not required to all illustrated blocks, event or action.Also, it should be appreciated that exemplary according to the present invention
Method and other method can be combined enforcement with method that is illustrated herein and that describe, and also can with other non-graphic extension or
The system described and equipment combine to be implemented.
Initially, and at 510, as described in detail by above, formation has multiple battery units of PN junction.As solved above
Releasing, each battery unit itself can include the multiple parallel semiconductor substrates being stacked.Each layer can be by forming PN junction
Impurity doped semiconductor material is constituted, and farther includes to strengthen " internal " electrostatic that the minority carrier towards this kind of PN junction moves
Drift field.Subsequently, and at 520, integrated these type of battery units multiple, the most also can be by buffer strip to form VMJ photovoltaic cell
It is embodied as the protection to this type of battery (stress/strain such as, induced thereon during making).Next and at 530,
On the surface receiving light of described VMJ photovoltaic cell, chamber connected in star (such as, saw) can be formed via scribing, including horizontal stroke
The plane of cross-sectional configurations is approximately perpendicular to the direction that stacking forms the described battery unit of described VMJ photovoltaic cell.Subsequently and
At 540, and can be approximately perpendicular to stack described battery unit including described cross-sectional configuration (and/or being parallel to described PN junction)
Direction plane in reflect incident illumination.
Fig. 6 graphic extension according to an aspect of the present invention as the buffer strip of the vertical parts tying VMJ photovoltaic cells more
The schematic block diagram of layout.VMJ photovoltaic cell 615 itself by battery unit 611,617(1 to the n, n of multiple overall joints is
Integer) formed, each of which battery unit itself is formed by the substrate stacked or layer (not shown).For example, each battery
Unit 611,617 can include the multiple parallel semiconductor substrates being stacked, and the semi-conducting material adulterated by impurity is constituted,
The semi-conducting material of described impurity doping forms PN junction and strengthens " internal " electrostatic that the minority carrier towards this kind of PN junction moves
Drift field.Correspondingly, can protect and be positioned (and as part of its battery unit) at any end of VMJ photovoltaic cell 615
Various active layers (such as, nn+ and/or p+n ties, or pp+ and/or pn+ knot) from the stress of noxious forms and/or strain
(such as, VMJ photovoltaic cell make and/or operation during can induce in described VMJ photovoltaic cell thermal mechanical pressure,
Torsion, moment, shearing force etc.).
Additionally, (such as, the upper limit of less than about 0.5ohm-cm can be had via the ohm contact with substantially low-resistivity
Arbitrary scope) material form each in buffer strip 610,612, alleviate simultaneously and/or eliminate and less desirable automatically mix
Miscellaneous.For example, other p-type dopant (such as, aluminium alloy) can be used to carry out shape by the low resistivity wafers using p-type doping
Become buffer strip 610,612, with alleviate automatically doping risk (compared with using the N-shaped wafer that can produce undesirably pn-junction-current
Prestige produce substantially low resistivity ohmic contact time).
The particular aspects of Fig. 7 graphic extension battery unit, its array can form VMJ photovoltaic cell.Battery unit 700 includes
The layer 711,713,715 being stacked in almost parallel layout.This type of layer 711,713,715 can farther include impurity
The semi-conducting material of doping, its middle level 713 be a kind of conductivity type and layer 711 is opposite conductivity rate type-with at intersection point 712
Place defines PN junction.Equally, layer 715 can be the conductivity type identical with layer 713-in addition by the highest impurity concentration,
Thus produce and strengthen the internal electrostatic drift field that the minority carrier towards PN junction 712 moves.This type of battery unit entirety can be connect
It is combined to be formed VMJ photovoltaic cell, wherein can position the buffer strip of the present invention to protect described VMJ photovoltaic cell and formation
Its associated battery cells and/or layer.
According to another further aspect, for being made described VMJ photovoltaic cell by multiple batteries 700, initially can by identical PNN+(or
NPP+) knot is formed as to high resistivity (such as, higher than the 100ohm-cm) flat wafer of N-type (or p-type) silicon (having about 0.008
The thickness of inch) in the degree of depth of about 3 to 10 μm.Subsequently, by this type of PNN+ wafer stacking together, the thinnest aluminium lamination inserts each
Between wafer, the PNN+ knot of each of which wafer and crystal orientation can orient with equidirectional.It is also possible to use aluminum-silicon congruent melting
Alloy, or there is the metal of the substantially matching hot coefficient in silicon, such as molybdenum or tungsten.It follows that can be by described silicon wafer and aluminum circle
Face fuses together so that can the molectron of stacking be bonded together.Additionally, may be used without aluminum-silicon congruent melting alloy.Ying Liao
Solving, a part and this type of layout that various N+ types and p-type doped layer can be embodied as described battery unit also belong to the present invention
In the range of.
Can also additionally be stacked in above the end layer of described VMJ photovoltaic cell and/or lower section non-active layer arrange
Form supply has a buffer strip of substantially low-resistivity, thus implement to protect described active layer from the stress of noxious forms and/
Or strain is (such as, at the heat/machine making and/or can inducing in described VMJ photovoltaic cell during operation of VMJ photovoltaic cell
Tool pressure, torsion, moment, shearing force etc.) barrier.
Fig. 8 graphic extension is battery unit 830(840) end layer 831(841) surface on edge formation 810
(812) the exemplary cross section of the buffer strip of form, its part forms VMJ photovoltaic cell 800.This type of edge formation 810,
The protection border of 812 active layers serving as described battery unit, and it is partly formed the framework of VMJ photovoltaic cell 800 further
So that carrying and transport (such as, the low-resistivity buffer strip of described VMJ photovoltaic cell and edge or terminal contacts).Equally, logical
Crossing the firm grip realized VMJ photovoltaic cell 800, described edge formation also allows for the operation relevant to anti-reflective coating
(such as, can uniformly applied be coated with when maintaining described battery (such as, by the mechanical grip to it) the most securely
Layer).Additionally, physically other limit formation, Qi Zhongke can be positioned adjacent to this type of edge formation during depositing operation
The arbitrary not phase being by mistake penetrated down in contact surface is easily removed in the case of not destroying battery unit 830,840
Hope dielectric coating material.Represent edge formation 810(812 of buffer strip) can be by substantially low-resistivity and the silicon of high doped
(such as, about 0.008 " thickness) is formed, and wherein said edge formation can contact VMJ photovoltaic cell subsequently from photovoltaic cell
The conductive lead wire of another VMJ photovoltaic cell segmentation in array.Additionally, due to the substantially low-resistivity of described buffer strip, not
Described conductive lead wire is asked to have the electrical contact completely with described buffer strip.Therefore, it can be part contact, such as point cantact or
Point contacts, and provides again good electrical contact simultaneously.It will be appreciated that Fig. 8 is exemplary in nature, and other version
(such as, the buffer strip 810 on the surface of the arrival 800 formed during fabrication, wherein 810 it is joined to active layer 841) also belong to
In the scope of the present invention.For example, the shape of 810 can represent and the part of the metal layer on buffer strip as previously described
Wire contacts.
Described conductive lead wire can form in electrode layer, it is formed by depositing first conductive material on substrate-and
Tungsten, silver, copper, titanium, chromium, cobalt, tantalum, germanium, gold, aluminum, magnesium, manganese, indium, ferrum, nickel, palladium, platinum, zinc, its alloy, the oxidation of indium stannum can be comprised
Thing, other conduction and semiconducting metal oxides, nitride and silicon dioxide, polysilicon, doped amorphous silicon and various gold
Belong to compositions alloy.Additionally, electrode can use other doped or undoped conduction or semiconductive polymer, oligomer or
Monolithic, such as PEDOT/PSS, polyaniline, polythiophene, polypyrrole, its derivant etc..Additionally, due to some metals can have shape
The oxide skin(coating) of the one-tenth performance that can deleteriously affect VMJ photovoltaic cell thereon, therefore nonmetallic materials (such as, amorphism
Carbon) can also be used for electrode formation.It will be appreciated that the edge formation of Fig. 8 is exemplary in nature and has and described active layer
Surface contact range other buffer strip configuration (such as, rectangle, circle, cross section) also fall within the scope of the invention.
Additionally, the various aspects of the present invention can be embodied as having the orientation of the crystal face that is associated for described buffer strip
A part for the wafer of Miller indices (111), it is considered than (100) crystallization being commonly used to fabricate effect VMJ battery unit
Orientation silicon is the most higher and etching is slower.Correspondingly, low-resistivity silicon layer can have and the knot of described action battery unit
The crystal orientation that brilliant orientation is different, wherein by using this kind of alternative orientations, it is provided that have the mechanical strength/terminal contacts of improvement
Device.In other words, compared with the end layer that non-active (111) orient, the edge etch of the battery unit that (100) orient is very fast
And substantially finishing has the angle of action battery unit of this kind of crystal orientation, thus produce and have for welding or additionally connect
The more stable apparatus structure of the more high mechanical properties of terminal contacts.
Fig. 9 is illustrated at the end layer of high voltage silicon vertically many knot VMJ photovoltaic cells and uses buffer strip to provide guarantor
Protect the correlation technique 900 of the barrier of its active layer.Although described herein exemplary methods graphic extension and be described as a series of
Represent the block of various event and/or action, but the present invention is not limited by the illustrated order of this type of block.Citing comes
Say, according to the present invention, in addition to order illustrated herein, some actions or event can in different order and/or and its
Its action or event occur simultaneously.Additionally, implement the method according to the invention may be not required to all illustrated blocks,
Event or action.Also, it should be appreciated that can be with illustrated herein and retouch according to the exemplary methods of the present invention and other method
The method stated combines to be implemented, and also can be combined enforcement with other non-graphic extension or the system of description and equipment.Initially, and
At 910, as described in detail by above, form multiple battery units with PN junction.As explained before, each battery unit is originally
Body can include the multiple parallel semiconductor substrates being stacked.Each layer can be by the impurity doped semiconductor material forming PN junction
Constitute, and farther include to strengthen " internal " electrostatic dispersion field that the minority carrier towards this kind of PN junction moves.Subsequently and 920
Place, integrated these type of battery units multiple are to form VMJ photovoltaic cell.Next and at 930, can implement to contact described VMJ light
The buffer strip of the end layer of volt battery, to provide the barrier protecting its active layer.This type of buffer strip can be described in being additionally stacked in
The form that the non-active layer of above the end layer of VMJ photovoltaic cell and/or lower section is arranged.Then can be by described VMJ light at 940
Volt battery is embodied as a part for photovoltaic cell.
Figure 10 graphic extension include photovoltaic (PV) battery 1023,1025,1027(1 to k, wherein k is integer) modularity
Arrange the schematic cross section 1000 of the solar energy molectron of 1020.Each PV battery can use had according to the present invention
Multiple VMJ photovoltaic cells of the buffer strip of aspect.Generally, every in PV battery (also referred to as photovoltaic cell) 1023,1025,1027
Light (such as, daylight) can be converted to electric energy by one.The modular arrangement 1020 of described PV battery can include promoting structure and carrying
Standardisation Cell or section for flexible arrangement.
In an exemplary aspect, each in photovoltaic cell 1023,1025,1027 can be to include multiple glass lined
The DSSC (DSC) of end (not shown), the most deposited thereon is transparent conducting coating, such as Fluorin doped
Tin oxide layer (for example).This kind of DSC can farther include semiconductor layer, such as TiO2Particle, sensitizing dyestuff layer, electrolysis
Matter and catalyst layer, such as Pt-(do not show)-it can be sandwiched between described glass substrate.For example, can be in described glass lined
Further deposited semiconductor layer in the coating at the end, and can using described dye coating as monolayer adsorption on described semiconductor layer.Cause
This, can form electrode and opposite electrode by oxidoreduction and flow with the electronics controlling between it.
Correspondingly, battery 1023,1025,1027 experience excitation, the circulation aoxidizing and reducing, the flowing of this generation electronics,
Such as electric energy.For example, incident illumination 1005 encourages the dye molecule in dye coating, and wherein the dye molecule of light stimulus subsequently will
Electronics injects in the conduction band of described semiconductor layer.This may result in the oxidation of described dye molecule, and wherein institute's injected electrons can
Flow through described semiconductor layer to form electric current.Hereafter, described electronics also original electrolyte at catalyst layer, and by oxidized dye
Material molecule is reversed to neutral state.This kind of excitation can be continuously repeated, aoxidize and the circulation reduced is to provide electric energy.
Figure 11 graphic extension uses the vertical electricity tying VMJ photovoltaic cell 1110 for electrolysis according to an aspect of the present invention
The schematic block diagram of solution system.Can partially or even wholly VMJ photovoltaic cell 1110 be immersed in water/electrolyte, as transparent
A part for vessel (such as, quartz, glass or plastics) 1130.When incident illumination 1135 runs into this kind of VMJ photovoltaic cell 1110
During surface 1137, can be formed in anode and/or the moon on surface 1137 in described whole VMJ photovoltaic cell and/or thereon
Multiple electrolysis electrodes of polar form.Whenever reaching the threshold voltage of electrolysis, at this type of electrolysis electricity being formed on surface 1137
Between pole, then the electric current of flowing flows through water and breaks water into hydrogen and oxygen.VMJ photovoltaic cell 1110 includes multiple entirety
The battery unit 1111 that engages, 1117(1 to n, wherein n is integer), each of which battery unit itself by the substrate stacked or
Layer (not shown) is formed.For example, each battery unit 1111,1117 can include the multiple parallel semiconductor being stacked
Substrate, and the semi-conducting material adulterated by impurity constitutes, the semi-conducting material of described impurity doping formed PN junction and strengthen towards
" internal " electrostatic dispersion field that the minority carrier of this kind of PN junction moves.When incident illumination 1135 is directed into surface 1137, at VMJ
In each district of photovoltaic cell 1110, then can form multiple negative electrode and anode, it is subsequently used as the electrode for electrolysis procedure.
Whenever reaching the threshold voltage of electrolysis, between this type of electrolysis electrode, the electric current of flowing flows through described electrolysis
Matter and break water into hydrogen and oxygen.Generally, this kind of decomposition threshold voltage be positioned in the range of 1.18 volts to 1.6 volts with division water and
Produce hydrogen and oxygen.It will be appreciated that can reach higher electricity by multiple battery units (the multiple batteries such as, being connected in series) of stacking
Pressure.Additionally, catalyst material can be used further to increase hydrogen and oxygen evolution efficiency and to reduce by high electrode current potential and electrolyte
The quasiconductor corrosion that solution is caused.Additionally, described electrolyte can form described VMJ photovoltaic cell by being not adversely affected by
Arbitrary solution of stack layer forms (catalyst based on iridium such as, being made up) of iridium, its bianry alloy or its oxide.In phase
In the aspect of pass, ultrasonic transducer (transducer) operationally remains attached to institute with release alternately with described electrolysis system
State the oxygen on electrolysis electrode or hydrogen bubble.
Further VMJ photovoltaic cell 1110 can be positioned in heat regulation molectron 1119, heat regulation molectron
1119 remove the heat produced from hot spot region is maintained in predetermined grade with the thermograde by described VMJ photovoltaic cell.This
Plant the form that heat regulation molectron 1119 can be arranged, it back of the body including being surface mounted to described VMJ photovoltaic cell in fin
Multiple fin of side, each of which fin can farther include to be approximately perpendicular to multiple fins that described dorsal part extends
(not shown).Described fin can expand the surface area of fin to increase and cooling medium (such as, electrolyte, such as water
Deng cooling fluid) contact, described cooling medium can be further used for from described fin and/or photovoltaic cell heat dissipation.
Therefore, can be conducted from the heat of described VMJ photovoltaic cell by described fin and make it into surrounding electrolyte, and/
Or do not affect the material of electrolysis procedure.Additionally, can conduct via the heat conduction path (such as, metal level) to described fin
From the heat of described VMJ photovoltaic cell to alleviate direct physical or the conduction of heat of described fin and described VMJ photovoltaic cell, and
The scalable solution of the appropriate operation for described electrolysis is provided.
In related fields, described fin can be positioned in various plane or three dimensional arrangement so as to monitor, regulate and
The heat flowing of described VMJ photovoltaic cell is left in management all sidedly.Additionally, each fin can use heat/electricity structure further
(not shown), described structure can have spiral, reverse, spiral, labyrinth shape or there is in a part comparatively dense figure of line
Case is distributed and has in other parts other planform that the most intensive pattern of line is distributed.For example, this
One part of class formation can be formed by the material providing relatively high isotropic conductivity and another part can be by another
The material providing high thermoconductivity on direction is formed.Correspondingly, each heat of heat regulation molectron/electricity structure provides heat to pass
Guiding path, described heat conduction path can dissipate from focus heat and make it into calorie adjusting device each heat pass
Conducting shell or associated thermal dissipation sheet, and thus promote described electrolysis procedure.It will be appreciated that can be via separating with described electrolyte medium
Independent cooling medium cools down described fin.
The metal level including being associated with the electrode of single battery unit 1201 of Figure 12 graphic extension present invention prominent
The another further aspect of thing 1211,1215.This type of outthrust 1211,1215 is from the prominent (example in surface 1241 of VMJ photovoltaic cell 1200
As, some millimeters) to promote described electrolysis process via increase contact surface area.Additionally, can make at VMJ photovoltaic cell
Period is by the thinnest electrode catalyst agent material (such as, platinum, RuO2Or titanium) layer be incorporated in described metallization with strengthen hydrogen produce
Raw.Additionally, select electrode catalyst agent material to there is sizable motility, because described gold for electrode catalyst agent material
N the negativity () side 1211 of genusization may differ from p+ positivity (+) side 1215.It will be appreciated that those skilled in the art can be easily
Select to produce strengthening hydrogen and stable and compatible with the making of VMJ photovoltaic cell catalyst material.When incident illumination 1235 arrives institute
When stating the surface 1241 of VMJ photovoltaic cell, multiple cathode/anode can be formed on.For example, at described VMJ photovoltaic electric
In some districts on pond (at electronegative negative electrode), reduction reaction occurs, and wherein gives hydrogen cation from the electricity of described negative electrode
Son (e-) to form hydrogen (by the half-reaction of acid balance):
Negative electrode (reduces): 2H+(aq)+2e-→H2(g)
To hydrogen cation from the electronics (e of described negative electrode-) to form hydrogen (by the half-reaction of acid balance).
At the anode of positively charged, oxidation reaction occurs, thus produces oxygen and described to complete to described cathode electronics
Circuit:
Anode (aoxidizes): 2H2O(l)→O2(g)+4H+(aq)+4e-
Also identical half-reaction can be balanced by following alkali.In general, not all half-reaction should be by acid or alkali
Balance.In general, for increasing half-reaction, both generally should be balanced by acid or alkali.
Negative electrode (reduces): 2H2O(l)+2e-→H2(g)+2OH-(aq)
Anode (aoxidizes): 4OH-(aq)→O2(g)+2H2O(l)+4e-
Combine arbitrary half-reaction to producing water to oxygen and identical total decomposition of hydrogen:
Overall reaction: 2H2O(l)→2H2(g)+O2(g)
As indicated above, therefore the number of produced hydrogen molecule is the twice of number of oxygen molecule.Assume two kinds of gas
Temperature and the pressure of body are equal, and therefore produced hydrogen have the two volumes of produced oxygen.Through being pushed through water
Electronics the number that number is produced hydrogen molecule twice and for four times of number of produced oxygen molecule.As above
Explained, if adding water-soluble electrolytes, then the conductivity of water significantly raises.Correspondingly, described electrolyte is separated into sun
Ion and anion；Wherein said anion rushes at anode and neutralizes the H of the positively charged wherein accumulated+；Similarly, described sun from
Son rushes at negative electrode and neutralizes the electronegative OH wherein accumulated-.This allows the continuous flowing of electricity.It will be appreciated that should be in conjunction with for VMJ
The material of photovoltaic cell considers the selection of electrolyte, in order to be not adversely affected by its material and operation.Select electrolyte
Extra factor abandons electronics about the anion from described electrolyte with hydroxide ion competition.Have less than hydroxide
The electrolytic anion of standard electrode potential may substitute described hydroxide and oxidized, and therefore will not produce any
Oxygen.Equally, reduction is had the cation of the standard electrode potential bigger than hydrion, and any hydrogen will not be produced.For subtracting
This type of situation light, following cation has and compares H+Low electrode potential and being consequently adapted to as electrolyte cation: Li+、Rb+、K+、Cs+、Ba2+、Sr2+、Ca2+、Na+And Mg2+.It is used as sodium and lithium, as long as this is not adversely affected by described VMJ photovoltaic electric
Pond-because it forms the most expensive soluble salt.
Voltage-the distance Curve of each point on Figure 13 graphic extension VMJ photovoltaic cell 1310, wherein battery unit
1311,1317 intersect or share shared border.As illustrated, VMJ photovoltaic cell 1310 includes the multiple electricity being connected in series
Pool unit 1311,1317, (such as, wherein said voltage can increase as the linear function of the number of the battery being stacked
The most from left to right).As illustrated in Figure 13, battery1Two ends between voltage difference be 0.6 volt, and pass through
Stack battery thereon2, this kind of voltage difference in combined battery increases to 1.2 volts.Equally, by stacking battery thereon3,
Described voltage difference rises to 1.8 volts.Therefore, electrolysis can exceeding for making moisture on the surface of described VMJ photovoltaic cell
Occur between any two point of the threshold value solved.For example, for 40 knot VMJ photovoltaic cells under 1000 sun optically focused
Open-circuit voltage, can produce 32 volts (such as, each battery units 0.8 volt).Assume with 1.6 volts of initial electrolysis, the most only two batteries
Unit just be enough to provide described voltage.In another aspect, when current loading increases, it is in by under 1000 sun optically focused
The voltage that the VMJ photovoltaic cell IV characteristic of peak power determines drops to 24 volts or every battery unit 0.6 volt.Therefore, it may be desirable to three
Individual battery unit, it contributes 1.8 volts for powering to described cell reaction.(electrolysis under higher current density generally also can need
Want overvoltage.)
Although should be further appreciated that and describe electrolysis under the background of single VMJ photovoltaic cell, but the present invention being not limited
Make and can be embodied as a part for multiple VMJ photovoltaic cell (such as, in parallel and/or series connection, or the most operatively separation).Pass through
Determining the current relationship formed between each district representing different voltage of VMJ photovoltaic cell, customizable VMJ photovoltaic cell sets
Count to provide the additional contact region for disposing high current at needs.For example, can be by increasing at each point
Metallization thickness reduces pick-up current density (if this is needs).It is also possible to use various forms of pressurizations improve
The collection (such as, screening mechanism, filter mechanism etc.) of the product (such as, hydrogen, oxygen) of electrolytic efficiency and/or decomposition.It will be appreciated that this
Invention be not limited to water electrolysis and can be mutual with VMJ photovoltaic cell suitably the electrolysis of other compound also belong to this
In bright scope.
Figure 14 graphic extension is according to an aspect of the present invention via the correlation technique 1400 of water electrolysis of VMJ photovoltaic cell.
Although described herein exemplary methods graphic extension and be described as a series of block representing various event and/or action, but this
Invention is not limited by the illustrated order of this type of block.For example, according to the present invention, except illustrated herein
Beyond order, some actions or event can in different order and/or occur with other action or event simultaneously.Additionally, enforcement root
All illustrated blocks, event or action may be not required to according to the method for the present invention.Also, it should be appreciated that according to this
Bright exemplary methods and other method can be combined enforcement with method that is illustrated herein and that describe, and also can with other not
Graphic extension or the system of description and equipment combine to be implemented.Initially and at 1410, introduce electrolyte solutions into containing VMJ light
In the container of volt battery, the most described VMJ photovoltaic cell fully or substantially submergence.Then at 1420, make this germline
System stands incident illumination and from described VMJ photovoltaic cell current flow.At 1430, described incident illumination can be at whole electrolyte
Solution produces water electrolysis, and wherein meets or exceeds any bit of threshold value (such as, about 1.2 volts) for making water decomposition
Putting, electrolysis occurs.For example, cross over each battery unit can produce 0.6 volt voltage (such as, for 1000 sun gather
Light) and between the first battery unit district and the 3rd battery unit district, electrolysis can occur.Correspondingly, can be by various collecting mechanisms
(such as, barrier film, sieve plate etc.) be positioned voltage exceed for electrolysis threshold value (such as, about 1.6) district between, and thus
Produced hydrogen is collected at 1440.It will be appreciated that may be used without other collection mechanisms such as such as collected downstream.
Figure 15 graphic extension can be used for the VMJ photovoltaic cell of electrolysis according to an aspect of the present invention.VMJ photovoltaic cell
1515 itself is integer by battery unit 1511,1517(1 to the n, n of multiple overall joints) formed, each of which battery unit
Itself formed by the substrate stacked or layer (not shown).For example, each battery unit 1511,1517 can include being stacked on one
The multiple parallel semiconductor substrates risen, and the semi-conducting material adulterated by impurity constitutes, the semi-conducting material of described impurity doping
Form PN junction and strengthen " internal " electrostatic dispersion field that the minority carrier towards this kind of PN junction moves.Additionally, by implementing one
Or more than one buffer strip 1510,1512, can protect and be positioned at any end of VMJ photovoltaic cell 1515 (and as its battery list
A part for unit) various active layers (such as, nn+ and/or p+n knot) from the stress of noxious forms and/or strain (such as,
VMJ photovoltaic cell make and/or operation during can induce in described VMJ photovoltaic cell thermal mechanical pressure, torsion,
Moment, shearing force etc.).(upper limit of less than about 0.5ohm-cm can such as, be had via having substantially low resistivity ohmic contact
Arbitrary scope) material form each in this type of buffer strip 1510,1512, alleviate simultaneously and/or eliminate less desirable
Automatically doping.For example, (such as, aluminum closes can to use other p-type dopant by the low resistivity wafers using p-type doping
Gold) form buffer strip 1510,1512, to alleviate the risk of doping automatically (with the N-shaped wafer that employing can produce undesirably pn-junction
Compare-when expectation produces substantially low resistivity ohmic contact).For example, at the terminal contacts of described VMJ photovoltaic cell also
Catalyst material (such as, platinum, titanium etc.) can be used, to promote electrolysis procedure.)
The particular aspects of Figure 16 graphic extension battery unit 1600, its array can form the VMJ of the electrolysis for the present invention
Photovoltaic cell.Battery unit 1600 is included in almost parallel layout the layer 1611,1613,1615 being stacked.This type of
Layer 1611,1613,1615 can farther include impurity doping semi-conducting material, its middle level 1613 be one conductivity type and
Layer 1611 is opposite conductivity rate type-to define PN junction at intersection point 1612.Equally, layer 1615 can be the biography identical with layer 1613
Conductivity types-in addition by the highest impurity concentration, thus produce what the minority carrier strengthened towards PN junction 1612 moved
Internal electrostatic drift field.Can be bonded together this type of battery unit entirety to form VMJ photovoltaic cell (such as, for this kind
Engage and use catalyst material to strengthen electrolysis), it performs electrolysis as detailed above.
According to another further aspect, for being made VMJ photovoltaic cell by multiple batteries 1600, initially can be by identical PNN+(or NPP+)
Knot is formed as to high resistivity (such as, higher than the 100ohm-cm) flat wafer of N-type (or p-type) silicon (having about 0.008 inch
Thickness) in the degree of depth of about 3 to 10 μm inches.Subsequently, by this type of PNN+ wafer stacking together, the thinnest aluminium lamination inserts each
Between wafer, the PNN+ knot of each of which wafer and crystal orientation can orient with equidirectional.It is also possible to use aluminum-silicon congruent melting
Alloy, or may be used without metal such as such as germanium and titanium etc. or the such as metal such as molybdenum or tungsten with the substantially matching hot coefficient in silicon.
It follows that described silicon wafer can be fused together with aluminium alloy interface so that can be bonded together (example by the molectron of stacking
As, farther include catalyst material).It will be appreciated that may be used without other material, such as germanium and titanium.Equally, it is possible to employing aluminum-
Silicon congruent melting alloy.Should be further appreciated that and electrolyte should be selected to make it be not adversely affected by the operation of VMJ photovoltaic cell, and/
Or cause the chemical reaction harmful to VMJ photovoltaic cell.It will be appreciated that various N+ types and p-type doped layer formation can be embodied as
A part for described battery unit and this type of layout also fall within the scope of the invention.
Figure 17 graphic extension includes the present invention further side of the VMJ photovoltaic cell with texturizing surfaces for electrolysis
Face.Illustrate the groove surfaces 1700 of parts as much more vertical knot VMJ photovoltaic cells 1720 according to an aspect of the present invention
Perspective schematic view.This veining 1700 arranges that making to reflect light can be routed away from p+ and n+ diffusing, doping district, produces simultaneously
Raw required carrier.Correspondingly, incident illumination can reflect in the plane 1710 have normal vector n.This kind of plane 1710 is parallel to
The PN junction plane of VMJ photovoltaic cell 1720, and the cross-sectional configuration of groove 1700 can be included.In other words, the determining of plane 1710
To the direction being approximately perpendicular to stacked battery cells 1711,1713,1715.This kind of groove surfaces can increase the effect of electrolysis process
Rate.
Figure 18 graphic extension is for the exemplary texture by the surface groove of described VMJ photovoltaic cell, and described surface exists
The light electrolysis for electrolyte is received on it.This kind of grooveization can be in the form of chamber connected in star, for example, as various in having
The " V " shape cross-sectional configuration of angle, θ (such as, 0 ° < θ < 180 °), " u "-shaped cross-sectional configuration etc., join including described cross section
The plane put is approximately perpendicular to the direction that stacking forms the battery unit of described VMJ photovoltaic cell, and/or is roughly parallel to described
The PN junction of VMJ photovoltaic cell.It will be appreciated that veining 1810,1820,1830 the determining at PN junction of the VMJ photovoltaic cell of the present invention
To and/or mutual upper the most different with the prior art for conventional silicon photovoltaic battery texture from incident illumination.For example, conventional silicon
Photovoltaic cell is the most textured to stop penetrating of light so that absorb more longer wavelength closer to PN junction (horizontal location)
To realize more preferable carrier electric current collection, and thus alleviate the difference spectra response of longer wavelength in solar spectrum.Compare down,
The VMJ photovoltaic electric of the enhanced spectrum response of this longer wavelength in the including vertical junction and provide solar spectrum of the present invention
Pond need not.
But, an aspect of the groove (such as, V groove) for implementing Fig. 7 is to be lost weight by reduction volume
Group loss-(contrary with the conventional solar energy surface using veining, this reduces reflection, or causes the light being reflected or reflecting to become
Must be closer to knot).In particular, VMJ photovoltaic cell has represented the more preferable carrier electricity for both short wavelength and long wavelength
Stream is collected, and wherein said short wavelength response is owing at elimination top surface, horizontal junction and the described long wavelength response of high doped are
Collection efficiency due to the enhancing of vertical junction.) as another example, if substituting the chamber connected in star texture of the present invention, by other
Texture (such as, random, pyramid, vaulted and similar convex configuration) is embodied as a part for VMJ photovoltaic cell, then incident illumination becomes
For reflecting in all directions, thus in p+ and n+ diffusion region, produce the efficiency that light absorbs and therefore produces reduction.Additionally, can
Apply reflectance coating to the dorsal part of described VMJ photovoltaic cell to absorb to further enhance light.
In another aspect, the present invention relates to improve photovoltaic cell (such as, solaode) especially at high intensity spoke
Penetrate the property of the high intensity solar cell (such as, edge illumination or vertical junction structure) that can produce the output of the highest electric power under grade
Energy.Enumerate the various designs forming the PV element for the battery unit making VMJ photovoltaic cell in this article with via through figure
The contact of case reduces the restructuring loss of photoproduction carrier.
Described VMJ photovoltaic cell has the intrinsic theoretical upper limit efficiency more than 30% under 1000 sun optically focused intensity, because of
This uses experiment to understand and from computer simulation and the experience of modeling analysis, and further performance improvement is possible.Although easily
In using analysis equation formula with good result to conventional sun concentrating solar battery modeling, but for grasping with high intensity
The VMJ photovoltaic cell situation of the edge illumination made is really not so, because under high intensity, even if battery can be operated by second-order effects
Efficiency has materially affect.Although be in conjunction with aspect or the feature of the solaode graphic extension present invention, but can be at other photovoltaic
Battery (such as, thermophotovoltaic or the battery that excited by the lasing light emitter of photon) utilizes this type of aspect or feature and is associated
Advantage (such as, the reduction of the restructuring loss of photoproduction carrier).In addition, it is possible to the aspect of the present invention is implemented on other class energy and turns
Change in battery (such as, beta voltaic cell).
The physical property of the electron-hole carrier pair produced in the solaode under high intensity is considerably complicated, because
Many physical parameters play a role, and include but not limited to: surface restructuring speed, carrier mobility and concentration, emitter stage are (such as,
Diffusion) reverse saturation current, minority carrier life-span, band gap narrow, in-building type electrostatic field and various recombination mechanism.Mobility is with load
The increase of sub-density and quickly reduce, and lattice restructuring difficult to understand with as carrier density cube intensity quickly increase.For by this type of
Aspect is incorporated in the modeling of VMJ solar cell properties, and computer simulation is (such as, in quasiconductor the two of photoproduction carrier transport
Dimension word computational analysis) can provide first to vertical junction battery unit or the PV with high-intensity operation or the operation under high intensity
The experience of the physical parameter in part.This analoglike provides analysis and design tool to understand may the originating and improve of effectiveness of performance
The performance of the VMJ photovoltaic cell under high intensity.Even if although it will be appreciated that simple analysis equation easy of use is with good result
To conventional sun concentrating solar battery modeling, but the VMJ photovoltaic electric of the edge illumination for operating with high exposure rate
Pond situation is really not so, because under high intensity, even if second-order effects also can have strong impact to battery operating efficiency.
Based on the contact incorporating Semiconductor Physics element arrays, the calculating simulation of the model of contact VMJ battery unit is taken off
Dew VMJ battery unit issues some given zone of the restructuring loss of the raw carrier of the third contact of a total solar or lunar eclipse in high intensity.In this type of district at least one
A little districts present the complicated loss mechanism depending on intensity.Calculating simulation disclose in PV element or VMJ battery unit can improved with
Reduce some districts of the performance losing and improving VMJ photovoltaic cell of recombinating.The aspect of the present invention provides this type of to improve.
Series resistance has been considered the important sources of the design problem of conventional concentrator solar cell.VMJ photovoltaic cell
Design proves more than enough in this regard, even if display series resistance under the intensity of 2500 sun optically focused is not a problem yet.
But, in some cases, it may be advantageous to exchange less design simplicity with the increase of series resistance, poly-to improve photovoltaic
The efficiency of the VMJ photovoltaic cell to operate close to 1000 sun optically focused of storage.
It will be appreciated that under substantially higher-strength, (such as, VMJ photovoltaic cell still be able to operate efficiently 2500 is too
Sun optically focused) operation design in terms of optics, structure, solar tracking and thermal control may need the harshest and expensive
Collector system engineering design, and any more preferable overall performance or economic benefit can not be contributed.Therefore, cited in the present invention
The aspect of solaode or feature and can improve at 1000 sun optically focused or higher for its technique that is associated produced
In the range of the efficiency performance of high-strength V MJ photovoltaic cell of operation.Efficiency improves can be made to utilize the VMJ of the aspect of the present invention too
Sun can battery or other solaode cost more efficient and feasible, even if it is for can more than the intensity of 1000 sun optically focused
Relate to additionally manufacturing and the potential increase of series resistance.Aspect described herein or feature can provide enough engineering design compromise with
Use solaode, VMJ photovoltaic cell or the photovoltaic collector system furthermore with the aspect of the present invention are providing relatively low
$/watt performance time more feasible and cost is more efficient.
Use real parameter (minority-carrier life-span, the table processed more than the good silicon under the intensity of 500 sun optically focused
Face restructuring speed etc.) aobvious to the microcomputer modelling analysis of conventional VMJ cell designs (such as, there is the P+NN+ sheet of deep knot)
Show that the following percentage ratio restructuring of some given zone is lost:
Therefore, this analyze show its hard contact account for exceed formed VMJ solaode battery unit in all heavy
Organize heavy doping P+ and the N+ diffusion emitter polar region of the half of loss, and the diffusion N+ emitter stage optimized may differ from the most in design
Good diffusion P+ emitter stage (partially due to ambulant difference).(can have for N+PP+ battery unit or P+NN+ battery unit
Shallow P+N ties) switch the relative magnitude that the restructuring being derived from N+ and P+ district is lost.In one aspect, the present invention is directed to reduce aforementioned
Restructuring loss in diffusion region is with the performance improving VMJ photovoltaic cell.
By the open-circuit voltage V of each battery unit knot under high intensityoc=0.8 volt, in conventional VMJ photovoltaic cell exploitation
Successfully reach high minority-carrier life-span and low surface restructuring speed.VocThe electric current and the diffused emitter that are produced by daylight are reversely satisfied
With electric current (Jo) determine, both P+N and the NN+ knots being wherein present in the battery unit of VMJ solaode are open-circuit voltage
Contribute.Minimum J is most preferably become from TV pointo；Use Jo=1x10–13Acm–2, its high-quality represented in diffusion junctions is low
Reverse saturation current, the diffusion depth analyzing display about 3 to 10 μm is the sufficient degree of depth spreading both for P+ and N+, even if
When considering the unlimited restructuring speed at ohmic metal contacts.
Even if it should be noted that deep and progressive NN+ diffusion profiles moves providing strengthening the minority carrier towards knot barrier
Internal electrostatic drift field (collecting for final) and reduce the restructuring in this district, but computer simulation discloses NN+ knot and strengthens and exist
Becoming less effective under high intensity, this may result in the higher restructuring in N+ district as implied above.
Content mentioned above includes the example providing the system and method for advantages of the present invention.It is, of course, not possible to for retouching
State the purpose of the present invention and describe each of each assembly or method it is conceivable that combination, but those skilled in the art can recognize
Knowledge is arrived, and the subject matter asked can have other combinations many and arrangement.Additionally, with regard to this detailed description, claims, adnexa
And in graphic term used " include (includes) ", " there is (has) ", for " having (possesses) " etc., this type of term
The mode that includes set be similar to term " comprise (comprising) " in detail in the claims be used as adversative time " comprise
(comprising) as " being explained.
Claims (16)
1. an electrolysis system, it is characterised in that including:
VMJ photovoltaic cell, it includes multiple overall battery unit engaged, and each battery unit has and forms the multiple of PN junction
Layer, described VMJ photovoltaic cell has one group of surface and a buffer strip of a dielectric coating patterning, and described buffer strip uses low
Resistivity materials, the crystal plane orientation that is associated of described buffer strip is Miller indices (111), and the ohm formed by described cushion
Contact or conductive contact deposit to described VMJ photovoltaic cell in dielectric coating patterned surface, to reduce described VMJ light
The carrier losses at diffusing, doping layer in volt battery, and protect the plurality of layer to induce from described VMJ photovoltaic cell
Stress and strain at least one；
Electrolyte, it receives electric current produced by described VMJ photovoltaic cell and makes described electrochemical dissolution, by described VMJ photovoltaic electric
Pond is partially or even wholly immersed in electrolyte, when light runs into described VMJ photovoltaic cell, and shape in described VMJ photovoltaic cell
Becoming multiple electrolysis electrode, when reaching the threshold voltage of electrolysis, between this type of electrolysis electrode, the electric current of flowing flows through electricity
Solve matter and make electrochemical dissolution；
And described VMJ photovoltaic cell has groove surfaces, described groove surfaces includes V-arrangement cross-sectional configuration or U-shaped cross-section
Configuration.
Electrolysis system the most according to claim 1, it is characterised in that the voltage difference between described battery unit two ends is at least
It it is 0.6 volt.
Electrolysis system the most according to claim 1, it is characterised in that described buffer strip is embodied as the end layer of battery unit
Surface on edge formation.
Electrolysis system the most according to claim 3, it is characterised in that described edge formation can contact another VMJ light subsequently
The conductive lead wire of volt battery segmentation, described buffer strip and described conductive lead wire are part contact.
Electrolysis system the most according to claim 1, it is characterised in that it is multiple that described battery unit includes being stacked
Parallel semiconductor substrate.
Electrolysis system the most according to claim 5, it is characterised in that the quasiconductor that described Semiconductor substrate is adulterated by impurity
Material is constituted.
Electrolysis system the most according to claim 6, it is characterised in that the semi-conducting material of described impurity doping includes PN junction
And strengthen the internal electrostatic drift field that the minority carrier towards this kind of PN junction moves.
Electrolysis system the most according to claim 4, it is characterised in that described conductive lead wire be the material of electrode layer comprise tungsten,
Silver, copper, titanium, chromium, cobalt, tantalum, germanium, gold, aluminum, magnesium, manganese, indium, ferrum, nickel, palladium, platinum, zinc, its alloy and indium tin oxide.
Electrolysis system the most according to claim 8, it is characterised in that VMJ photovoltaic cell, with via the electricity for compound
The incident illumination solved and electric current produce the electrolysis providing described compound.
10. the method making electrolyte be electrolysed, it is characterised in that including:
Integrally engaging multiple active layer and have the VMJ photovoltaic cell of buffer strip with formation, described VMJ photovoltaic cell has an electricity
One group of surface of dielectric coated patterning, described buffer strip uses low resistivity material, and the crystal face that is associated of described buffer strip is fixed
To being Miller indices (111), and the ohm contact or the conductive contact that are formed by described cushion deposit to described VMJ photovoltaic cell
In dielectric coating patterned surface, to reduce the carrier losses at the diffusing, doping layer in described VMJ photovoltaic cell, and
Protect the plurality of layer from least one in the stress induced on described VMJ photovoltaic cell and strain；
From described VMJ photovoltaic cell generation electric current for the electrolysis to electrolyte, by described VMJ photovoltaic cell portion ground or complete
Entirely immerse in electrolyte, when light runs into described VMJ photovoltaic cell, described VMJ photovoltaic cell forms multiple electrolysis electricity
Pole, when reaching the threshold voltage of electrolysis, between this type of electrolysis electrode, the electric current of flowing flows through electrolyte and makes electrolysis
Matter is decomposed；
And described VMJ photovoltaic cell has groove surfaces, described groove surfaces includes V-arrangement cross-sectional configuration or U-shaped cross-section
Configuration.
11. make the method that electrolyte is electrolysed according to claim 10, it is characterised in that farther include to pass through heat regulation
Described VMJ photovoltaic cell is cooled down by molectron.
12. make the method that electrolyte is electrolysed according to claim 10, it is characterised in that further include at described VMJ photovoltaic
Multiple anode and negative electrode is formed on the surface of battery.
13. make the method that electrolyte is electrolysed according to claim 10, it is characterised in that farther include implement buffer strip with
The barrier protecting its active layer is provided.
14. make the method that electrolyte is electrolysed according to claim 10, it is characterised in that described integrally engage multiple effect
Layer comprises overall engaging battery unit further.
15. make the method that electrolyte is electrolysed according to claim 10, it is characterised in that farther include fuse silicon wafer with
Aluminum interface is to form VMJ photovoltaic cell.
16. make the method that electrolyte is electrolysed according to claim 10, it is characterised in that use impurity doping partly to lead further
Body material is to form PN junction in what VMJ photovoltaic cell.
Applications Claiming Priority (18)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8892108P | 2008-08-14 | 2008-08-14 | |
| US8893608P | 2008-08-14 | 2008-08-14 | |
| US61/088,921 | 2008-08-14 | ||
| US61/088,936 | 2008-08-14 | ||
| US8938908P | 2008-08-15 | 2008-08-15 | |
| US61/089,389 | 2008-08-15 | ||
| US9253108P | 2008-08-28 | 2008-08-28 | |
| US61/092,531 | 2008-08-28 | ||
| US12/535,952 | 2009-08-05 | ||
| US12/535,952 US20100037937A1 (en) | 2008-08-15 | 2009-08-05 | Photovoltaic cell with patterned contacts |
| US12/536,982 | 2009-08-06 | ||
| US12/536,987 US8106293B2 (en) | 2008-08-14 | 2009-08-06 | Photovoltaic cell with buffer zone |
| US12/536,987 | 2009-08-06 | ||
| US12/536,992 | 2009-08-06 | ||
| US12/536.992 | 2009-08-06 | ||
| US12/536,982 US20100037943A1 (en) | 2008-08-14 | 2009-08-06 | Vertical multijunction cell with textured surface |
| US12/536,992 US8293079B2 (en) | 2008-08-28 | 2009-08-06 | Electrolysis via vertical multi-junction photovoltaic cell |
| CN2009801392214A CN102171840A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
Related Parent Applications (1)
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| CN2009801392214A Division CN102171840A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
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| CN103354247A CN103354247A (en) | 2013-10-16 |
| CN103354247B true CN103354247B (en) | 2016-10-05 |
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| CN201310219215.8A Expired - Fee Related CN103337546B (en) | 2008-08-14 | 2009-08-12 | There is photovoltaic cell and the related application of treated surface |
| CN2009801392214A Pending CN102171840A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
| CN2013102194702A Pending CN103337547A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
| CN201310219468.5A Expired - Fee Related CN103354247B (en) | 2008-08-14 | 2009-08-12 | Electrolysis system and the method making electrolyte be electrolysed |
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| CN201310219215.8A Expired - Fee Related CN103337546B (en) | 2008-08-14 | 2009-08-12 | There is photovoltaic cell and the related application of treated surface |
| CN2009801392214A Pending CN102171840A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
| CN2013102194702A Pending CN103337547A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
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| EP (1) | EP2327107A1 (en) |
| JP (1) | JP2012500474A (en) |
| CN (4) | CN103337546B (en) |
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| CA (2) | CA2820184A1 (en) |
| IL (1) | IL211205A0 (en) |
| MX (1) | MX2011001738A (en) |
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| TW (1) | TWI535042B (en) |
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| TWI420798B (en) * | 2010-12-03 | 2013-12-21 | Mh Solar Co Ltd | Hybrid solar energy power system |
| TWI418046B (en) * | 2010-12-03 | 2013-12-01 | Mh Solar Co Ltd | A manufacturing method for the multi-junction solar cell |
| TWI424657B (en) * | 2010-12-03 | 2014-01-21 | Mh Solar Co Ltd | Concentrating solar cell system with the heating device |
| TWI420782B (en) * | 2010-12-06 | 2013-12-21 | Mh Solar Co Ltd | A electronic device with self power generation |
| TWI420781B (en) * | 2010-12-06 | 2013-12-21 | Mh Solar Co Ltd | A portable solar cell device with self-power generation |
| CN102646749A (en) * | 2011-02-18 | 2012-08-22 | 美环光能股份有限公司 | Manufacturing method of vertical multi-junction solar cell |
| CN102437208B (en) * | 2011-12-08 | 2013-11-20 | 上海太阳能电池研究与发展中心 | Mechanically assembled solar cell |
| TWI506801B (en) * | 2011-12-09 | 2015-11-01 | Hon Hai Prec Ind Co Ltd | Solar battery |
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- 2009-08-12 WO PCT/US2009/053576 patent/WO2010019685A1/en active Application Filing
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Also Published As
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| TW201013951A (en) | 2010-04-01 |
| CA2820184A1 (en) | 2010-02-18 |
| BRPI0917838A2 (en) | 2017-02-14 |
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| MX2011001738A (en) | 2011-08-12 |
| JP2012500474A (en) | 2012-01-05 |
| RU2012141985A (en) | 2014-05-10 |
| CN103354247A (en) | 2013-10-16 |
| CN103337546A (en) | 2013-10-02 |
| WO2010019685A1 (en) | 2010-02-18 |
| RU2011109164A (en) | 2012-09-20 |
| AU2009281960A1 (en) | 2010-02-18 |
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| CN103337546B (en) | 2017-03-01 |
| CN102171840A (en) | 2011-08-31 |
| EP2327107A1 (en) | 2011-06-01 |
| TWI535042B (en) | 2016-05-21 |
| RU2472251C2 (en) | 2013-01-10 |
| CN103337547A (en) | 2013-10-02 |
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