CN102646749A

CN102646749A - Manufacturing method of vertical multi-junction solar cell

Info

Publication number: CN102646749A
Application number: CN2011100419810A
Authority: CN
Inventors: 沙特贝那德L
Original assignee: MH Solar Co Ltd
Current assignee: MH Solar Co Ltd
Priority date: 2011-02-18
Filing date: 2011-02-18
Publication date: 2012-08-22

Abstract

The invention provides a manufacturing method of a vertical multi-junction solar cell, which comprises the following steps: covering a dielectric coating on a photovoltaic (PV) module to pattern the surface of the PV module, thereby generating a limited-diffusion doped region in the PV module, wherein the PV module comprises at least one of a P-type diffusion doped region and an N-type diffusion doped region; metallizing the PV module by depositing ohm contacts onto one or more patterned surfaces of the PV module; piling a group of patterned and metallized PV modules to form a solar cell; and carrying out a processing procedure to optimize the PV efficacy of the solar cell allocation. Thus, the invention provides the PV operation with the manufacturing complexity which exceeds the increase.

Description

The manufacture method of vertical multi-junction solar cells

Technical field

The present invention is particularly to a kind of manufacture method of multi-junction solar cells relevant for a kind of manufacture method of solar cell.

Background technology

The whole world faces and uses the environmental pollution that fossil fuel brought to make the global warming aggravation now; Adding fossil fuels such as oil peters out and supplies and be critical; Under the situation that energy prices record high repeatly; Therefore, various countries actively seek alternative energy invariably, wherein solar cell be emerging alternative energy in play the part of considerable role.

In various solar cells, the concentrating solar battery is extensively noted because under high optically focused ratio, producing very big power output.Quite a lot of work majority focuses on exploitation and is used for high-intensity silicon concentrating solar battery.Yet when when trial overcomes the series resistance problem of concentrating solar battery, running into great difficulty, just the high series resistance in the concentrating solar battery causes voltage greatly to lose.Therefore, general multi-junction solar cells technology is suggested and solves above-mentioned problem.Yet, on the concentrating solar battery taken off under acceptable series resistance, only can use and not be higher than 250 sun optically focused designs.This kind design complexities and relevant cost hinder the essence development of concentrating solar battery technology, and promote the development as substitute technologies such as thin film solar cell technologies.

The multi-junction solar cells technology roughly is different from general single junction solar cells.The multi-junction solar cells technology provides at least two advantages with respect to other technology: (1) low manufacturing cost is for natural; The possibility that (2) can under high optically focused intensity, operate.For example: because under 2500 sun optically focused, the current density of multi-junction solar cells is usually near 70A/cm ², the accurate position that this current density roughly is harmful to the most solar cells based on other technology.Yet with 2500 sun optically focused runnings, series resistance also is out of question in connecing the face battery design more, even when optically focused intensity is higher than an order of magnitude of general general knowledge, also is out of question, even if infeasible economically design.

With reference to United States Patent (USP) notification number the 4th, 516,314,4,409,422,4,332, No. 973, it mainly discloses a kind of solar cell with the face of connecing more, and method can improve cell output voltage by this.Yet the joint that discloses its semiconductor substrate in this case is to utilize aluminium foil to fit, the use of adhesive agent when fitting, with the mechanical engagement intensity behind the joint that reduces semiconductor substrate with connect uniform current density between face.

In addition; With reference to No. the 201013951st, TaiWan, China patent publication No.; Its title for " have the photovoltaic cell and a related application of treatment surface "; It mainly discloses a kind of via the surface-treated multi-junction solar cells, and the dielectric material of a surface texture and a patterning alleviates the photovoltaic cell and the making that combine loss again of photo-generated carrier by this.Yet the dielectric material making that discloses its patterning in this case is but added its making complexity and is raised the cost, and does not disclose its making step and parameter etc. in detail.

In order to solve the above problems, multi-junction solar cells manufacture method of the present invention can provide required mechanical engagement intensity of this multi-junction solar cells and uniform current density, makes it be issued to the effect of low cost high powered output in unit are.

Summary of the invention

The present invention provides a kind of vertical multi-junction solar cells manufacture method.In an aspect, combine loss again for reducing, (Photo-Valtaic, PV) the dielectric substance pattern of the contact between the assembly is coated with the diffusing, doping layer in this active PV assembly with the active photovoltaic to reduce hard contact.Various pattern capable of using, and can one or more dielectrics be coated with one or more surfaces of this PV assembly.Can produce through patterned PV assembly or element cell and vertically connect face (Vertical Mutijunction Junction, VMJ) solar cell more.Patterned PV assembly can increase the series resistance of VMJ solar cell, and a making interpolation complexity that is used to produce the VMJ solar cell can be given in the one or more surfaces in this PV assembly of patterning; In addition, thus the charge carrier loss that reduces diffusing, doping layer place can increase the efficient of solar cell and the PV running that surpasses the manufacturing complexity that increases advantage is provided.One system of the making of the PV battery of realizing based semiconductor also is provided.

Can in arbitrary type of photovoltaic cell (for example, the battery that solar cell, hot photovoltaic cell or the laser source through photon excite), utilize aspect described herein or characteristic and related advantages, for example reduce the loss of combination again of photo-generated carrier.In addition, also can aspect of the present invention be implemented in other type power conversion battery (for example, beta voltaic cell (betavoltaic cell)).

The present invention alleviates this body of vertically connecing in face (VMJ) battery via the veining on the optical receiving surface that vertically connects face (VMJ) battery more more and combines loss again.These textures can be the form of chamber connected in star (like " V " shape section configuration, " U " shape section configuration and like that), are approximately perpendicular to the direction of the element cell of storehouse formation VMJ comprising a plane of this kind section configuration.In an aspect, comprise that a plane of roughly repeating section (direction that for example, groove is extended becomes section) above that is approximately perpendicular to the direction of these element cells of storehouse.This configuration promotes the refract light guiding is left p+ and the n+ diffusing, doping district of VMJ, in the volume that reduces, produces required charge carrier simultaneously.Correspondingly, incident light can reflect comprising this section configuration and be approximately perpendicular in the plane of this direction of these element cells of storehouse.

Should be appreciated that, the veining of VMJ of the present invention PN connect the directed of face and/or aspect two of the interactions of incident light on different with the prior art that is used for general silicon photovoltaic cell texture.For example; General silicon photovoltaic cell is usually through veining penetrating with prevention light; Make that more approach PN connects face (horizontal location) and absorb more longer wavelengths being used for the better electric current collection of charge carrier, thereby and alleviate the difference spectra of longer wavelength in the solar spectrum is responded.Therefore by contrast, this does not need among VMJ of enhanced spectrum response of longer wavelength in comprising the vertical junction face and providing solar spectrum of the present invention.

In a particular aspect; The groove of embodiment of the present invention (for example; The V groove) a result comes ameliorate body to combine loss-(opposite with the general solar energy surface of using veining, this reduces reflection, or cause to become through the light that reflects or reflect more approach face) again through reducing volume.Specific; This VMJ battery has represented to short wavelength and both better charge carrier electric current collection of long wavelength; Wherein this short wavelength response connects face owing to eliminate the level of top surface place one high doped, and this long wavelength's response is because the collection efficiency of the enhancing of vertical junction face.As another instance; If substitute chamber of the present invention connected in star texture; With other texture (for example; At random, pyramid, vaulted and similar protruding configuration) be embodied as the part of VMJ, then incident light becomes on all directions and reflects, thereby in p+ and n+ diffusion region, produces light absorption and therefore produce the efficient that reduces.

According to a correlation technique, can form a VMJ through a plurality of battery units of storehouse at first, wherein each battery itself can comprise storehouse a plurality of parallel semiconductor substrate or layer together.Each layer can constitute by forming the impurity doped semiconductor material that a PN connects face, and comprises that further enhancing connects one " in-building type (built-in) " electrostatic dispersion field that the minority carrier of face moves towards this kind PN.Subsequently, a plurality of these type of battery units are integrated to form a VMJ.Next, on a surface of the reception light of this VMJ battery, can form chamber connected in star (for example), be approximately perpendicular to the direction that storehouse forms these element cells of this VMJ comprising the plane of this section configuration via the stroke blade saw.Correspondingly, incident light can comprise these repeat section configurations and be approximately perpendicular to refraction in the plane of this direction of these element cells of storehouse (for example, thus supply a higher absorption to a given depth.) in addition, can combine various aspect of the present invention to implement to have the various surfaces, back and the side surface of reflectance coating.

In a related aspect, a grooveization of the present invention surface is the improvement carrier collection further, reduces body simultaneously and combines loss again.For example, can locate these V grooves, with the optical absorption path that increases longer wavelength in the solar spectrum and make light absorption can roughly be confined in the n type tagma of p+nn+ element cell perpendicular to these p+nn+ (or n+pp+) element cell.In addition, these V grooves can have an ARC that absorbs with the incident light in the improvement battery through applying.

In a related aspect, the present invention vertically connects the veining optical receiving surface of face (VMJ) battery on via one more and alleviates this body that vertically connects in face (VMJ) battery more and combine to lose again.These textures can be the form of chamber connected in star (like " V " shape section configuration, " U " shape section configuration and like that), are approximately perpendicular to the direction of the element cell of storehouse formation VMJ comprising a plane of this kind section configuration.In an aspect, comprise that a plane of roughly repeating section (direction that for example, groove is extended becomes section) above that is approximately perpendicular to this direction of these element cells of storehouse.This configuration promotes the refract light guiding is left p+ and the n+ diffusing, doping district of VMJ, in the volume that reduces, produces required charge carrier simultaneously.Correspondingly, incident light can reflect comprising this section configuration and be approximately perpendicular in the plane of this direction of these element cells of storehouse.

According to a correlation technique, can form a VMJ through a plurality of battery units of storehouse at first, wherein each battery itself can comprise storehouse a plurality of parallel semiconductor substrate or layer together.Each layer can constitute by forming the impurity doped semiconductor material that a PN connects face, and comprises that further enhancing connects one " in-building type " electrostatic dispersion field that the minority carrier of face moves towards this kind PN.Subsequently, a plurality of these type of battery units are integrated to form a VMJ.Next, on a surface of the reception light of this VMJ battery, can form chamber connected in star (for example), be approximately perpendicular to the direction that storehouse forms these element cells of this VMJ comprising the plane of this section configuration via the stroke blade saw.Correspondingly, incident light can comprise these repeat section configurations and be approximately perpendicular to refraction in the plane of this direction of these element cells of storehouse (for example, thus supply a higher absorption to a given depth.) in addition, can combine various aspect of the present invention to implement to have the various surfaces, back and the side surface of reflectance coating.

In another aspect, the present invention supplies one or more buffer strip at the end layer place that a high voltage silicon vertically connects face (VMJ) photovoltaic cell more, so that a barrier of an ohm contact to be provided when these active layers of protection are provided.This (etc.) buffer strip can be the form of a non-active layer configuration of the end layer top that be stacked over this VMJ battery in addition and/or below.This VMJ battery itself can comprise a plurality of battery units, and wherein each battery unit adopts some active layers (for example, three) to form a PN and connects face and " in-building type " electrostatic dispersion field (its enhancing is moved towards the minority carrier that this PN connects face).

Therefore; The various active layers that can protect any end place of being positioned at the VMJ battery part of its battery unit (and as) (for example; Nn+ and/or p+n connect face) avoid stress and/or the tension force (heat/mechanical pressure, torsion, moment, the shearing and like that for example, between the making of this VMJ and/or operational period, can in this VMJ, bring out) of harmful form.In addition, can the material of low-resistivity ohm contact (metal or semiconductor) form this buffer strip via having roughly, make it under operation condition, in this photovoltaic cell, will can not contribute any essence series resistance loss.For example; Can form this buffer strip through the low-resistivity Silicon Wafer that adopts the p type to mix; Make and when making this VMJ photovoltaic cell, (for example use other p type dopant; Aluminium alloy) time, its will alleviate automatic doping a risk (with adopt can produce do not expect the n type wafer that pn connects face compare-produce one roughly during the low-resistivity ohm contact when a target).Should be appreciated that, can the present invention be embodied as the part of arbitrary type of photovoltaic cell (for example, solar cell or hot photovoltaic cell).In addition, also can aspect of the present invention be implemented in other type power conversion battery (for example, beta voltaic cell).

In related aspect, this buffer strip can be the form on a lip-deep one side of an end layer of a battery unit, and it serves as a protection border of this kind active layer, and further forms the framework of this VMJ battery so that carrying and transportation.Likewise; Through realizing the firm grip to this VMJ battery, this kind limit forms thing and also is convenient to the operation relevant with the anti-reflective coating (for example, when between operational period, (for example keeping this battery securely; Through mechanical grip to it) time, can apply coating equably).In addition; Entity ground with these buffer strips (for example during can be in Shen long-pending; Be positioned the non-active layer at the end place of this VMJ) orientate as and adjoin other buffer strip; Thereby and can be under the situation of not destroying the active cell battery, easily remove and by mistake penetrate into arbitrary on the contact surface downwards and do not expect the dielectric coating material.Can form this buffer strip from the silicon of low-resistivity roughly and high doped (for example, about 0.008 " a thickness).This kind buffer strip can contact the conductive lead wire that a VMJ battery another VMJ battery in a photovoltaic cell array is cut apart or separated subsequently.

According to an aspect again, can this buffer strip be sandwiched between the active layer of an electric contact and these VMJ batteries.In addition, these buffer strips can have the thermal expansion character of approximate match in the thermal expansion character of these active layers, thereby alleviate usefulness lower one's standard or status (for example, alleviating of the stress/strain that the time caused of welding or soft soldering lead-in wire) during fabrication.For example, can adopt the thermal coefficient of expansion (3 * 10 that is matched with all active cell batteries ^-6/ ℃) the low-resistivity silicon layer of high doped.Correspondingly, can roughly strong ohm contact be provided to these active cell batteries, it alleviates in addition by welding/soft soldering and causes and/or from the stress problem of the thermal coefficient of expansion that do not match in the slider material.Other instance comprises the introducing metal level, and for example tungsten (4.5 * 10 ^-6/ ℃) or molybdenum (5.3 * 10 ^-6/ ℃), it is because of roughly being similar to initiatively silicon (3 * 10 ^-6/ ℃) thermal coefficient of expansion of p+nn+ element cell and being selected.Can not to high intensity solar cell or photovoltaic cell introduce welding under the situation of harmful stress or soft soldering be applied to this buffer strip the low-resistivity silicon layer exterior layer or be applied to the metallization of the metal layer of electrodes that is fused to these active cell batteries, wherein these exterior layers are as ohm contact; Rather than the element cell section of connecting with other element cell.

Can various aspects of the present invention be embodied as the part of wafer of the Miller indices (111) of the orientation with the crystalline plane that is associated that is used for these buffer strips, it is mechanically stronger and etching is slower that it is regarded as than is generally used for (100) crystal orientation silicon of making VMJ element cell initiatively.Correspondingly, the low-resistivity silicon layer can have a crystal orientation different with the crystal orientation of these active cell batteries, wherein through adopting this kind alternative orientations, a device of the mechanical strength/terminal contacts with improvement is provided.In other words; Compare with the end layer that non-active (111) is directed; (100) the common etching in edge of directed element cell comparatively fast and in fact finishing have the angle of the active cell battery of this kind crystal orientation, be used to weld or a stabilizing arrangement structure more of the more high mechanical properties of link contact in addition thereby produce to have.

According to a kind of manufacture method of vertical multi-junction solar cells, its step comprises: coating one dielectric coating makes its patterned surface on a PV assembly, is limited to the diffusing, doping district to produce in this photovoltaic assembly; This PV assembly that metallizes, it deposits in an ohm contact to the patterned surface of this PV assembly one or more; One group of patterned, metallized PV assembly of storehouse is to form a solar cell; Be deployed as optimization PV usefulness in what a processing procedure made this solar cell.

Description of drawings

Fig. 1 graphic extension aspect according to the present invention as a veining of the part that vertically connects face (VMJ) battery or a perspective schematic view on grooveization surface more;

Fig. 2 graphic extension is used for the exemplary section of the groove of embodiment of the present invention;

Fig. 3 graphic extension aspect according to the present invention has an exemplary storehouse of the battery unit of the surperficial VMJ of a grooveization in order to formation;

Fig. 4 graphic extension aspect according to the present invention partly forms the discrete cell battery of a VMJ;

Fig. 5 graphic extension produces the VMJ with grooveization surface according to an aspect according to the present invention and combines the correlation technique that loses with ameliorate body again;

Fig. 6 graphic extension aspect according to the present invention as one vertically connect the part of face (VMJ) battery more the schematic block diagrams that disposes of buffer strip;

Fig. 7 graphic extension particular aspect one of which array according to the present invention can form a particular aspect of an element cell of a VMJ battery;

Lip-deep one side that Fig. 8 graphic extension is the element cell at the arbitrary end place that is positioned at a VMJ forms an exemplary section of a buffer strip of thing form;

Fig. 9 is illustrated in the vertical end layer place that connects face (VMJ) photovoltaic cell of a high voltage silicon more and adopts buffer strip so that a correlation technique of a barrier of protecting its active layer to be provided;

Figure 10 graphic extension comprises the schematic cross sectional view of a solar energy assembly of a modular arrangements of photovoltaic (PV) battery of the VMJ that can implement to have buffer strip;

Figure 11 graphic extension is adopted a vertical schematic block diagrams that connects an electrolysis system of face (VMJ) battery according to an aspect of the present invention to water electrolysis more;

Figure 12 graphic extension is the outstanding metal level protrusion that can promote that electrolysis is made from the surface of this VMJ;

Figure 13 graphic extension is crossed over this VMJ and as the voltage gradient in the whole stacked cells of its part;

Figure 14 graphic extension aspect according to the present invention is via a method of the water electrolysis of a VMJ;

Figure 15 graphic extension can be used for a VMJ battery of electrolysis of the present invention;

Figure 16 graphic extension one single battery unit, a plurality of these single battery unit are formed for the VMJ of electrolysis of the present invention;

Figure 17 graphic extension has the VMJ battery of a groove surface with the efficient of improvement electrolysis making;

Figure 18 graphic extension aspect according to the present invention be used for electrolysis a VMJ one the surface the exemplary grooveization;

Figure 19 A and Figure 19 B are according to the icon of the exemplary configuration of the patterned surface of the aspect PV assembly that is disclosed in should using; Figure 19 C shows the icon according to the exemplary set predecessor of aspect disclosed herein and the PV assembly of deriving that can produce through mixing;

Figure 20 A to Figure 20 C graphic extension is according to the icon of the exemplary configuration of the patterned dielectric coating of aspect PV assembly described herein and an illustrative VMJ storehouse.The 20D graphic extension is treated to expose a VMJ PV battery of a specific crystal surface to the open air;

Figure 21 A to Figure 21 C graphic extension is according to the icon of the exemplary configuration of the patterned dielectric coating of aspect PV assembly described herein and an illustrative VMJ storehouse;

Figure 22 graphic extension has a profile of an exemplary configuration of the patterned dielectric coating of PV assembly initiatively of the diffusing, doping layer that reduces according to aspect described herein;

Figure 23 A and Figure 23 B graphic extension are according to the icon of the exemplary configuration of the patterned dielectric coating of aspect one PV assembly described herein;

Figure 24 presents the perspective view of an embodiment that has a photovoltaic cell of texturizing surfaces according to aspect described herein;

Figure 25 is used to produce a flow chart of an exemplary methods of the photovoltaic cell that the charge carrier with reduction combines to lose again according to aspect disclosed herein;

Figure 26 shows a flow chart that is used to produce an exemplary methods 2600 of the vertical multi-junction solar cells that the charge carrier with reduction combines to lose again according to aspect disclosed herein; And

Figure 27 realizes the calcspar that an exemplary of the making of solar cell is united according to aspect described herein.

Symbol description

100... 110... plane, grooveization surface

111... element cell 113... element cell

115... element cell 120... vertically connects the face battery more

210... veining 220... veining

230... veining 311... element cell

313... element cell 315...VMJ

317... element cell 345... side

400... element cell 411... layer

412... intersection point 413... layer

415... layer 610... buffer strip

611... battery unit 612... buffer strip

615...VMJ 617... battery unit

700... element cell 711... layer

712... intersection point 713... layer

715... layer 800...VMJ battery

810... the limit forms thing 812... limit and forms thing

830... element cell 831... holds layer

840... element cell 841... holds layer

1005... incident light 1020... block configuration

1023... photovoltaic cell 1025... photovoltaic cell

1027... photovoltaic cell 1110... vertically connects the face battery more

1111... battery unit 1117... battery unit

1119... heat regulation assembly 1130... vessel

1135... incident light 1137... is surperficial

1200...VMJ 1201... element cell

1211... protrusion 1215... protrusion

1235... incident light 1241... is surperficial

1310...VMJ 1311... element cell

1317... element cell 1510... buffer strip

1511... battery unit 1512... buffer strip

1515...VMJ 1517... battery unit

1600... element cell 1611... layer

1612... intersection point 1613... layer

1615... layer 1700... grooveization surface

1710... plane 1711... element cell

1713... element cell 1715... element cell

1720... vertically connect face battery 1810... veining more

1820... veining 1830... veining

1910... photovoltaic assembly 1912...N type (N) layer

1914... through doping N+ diffusion region 1916... through doping P+ diffusion region

1920... dielectric coating 1925... hard contact

1935... hard contact 1960... dielectric coating

1980...N type is through doping predecessor 1982...PV assembly

1984...PV assembly 1985...P type is through the doping predecessor

1986...PV assembly 1988...PV assembly

1990... intrinsic predecessor 1992...PV assembly

1994...PV assembly 1996...PV assembly

1998...PV assembly 2005... dielectric coating district

2012...N type district 2014...N+ diffusing, doping layer

2016...P+ diffusing, doping layer 2025... hard contact

2035... hard contact 2060...VMJ photovoltaic cell

Constitute element cell 20701... constitute element cell 20702...

2070M... constitute element cell 2080... direction

2092... storehouse 2094... normal vector

2096... part 2130... pattern

2135... width w 2140... pattern

2145... intervals wP 2150...PV assembly

2155... dielectric region 2165... dielectric region

2172...N type district 2174...N+ diffusing, doping layer

2176...P+ diffusing, doping layer 2200...PV assembly

2202... dielectric coating 2205... dielectric coating district

2212...N 2214...N+ diffusion region, type material district

2216...P+ diffusing, doping district 2300...PV assembly

2305... district 2314... doped region

2316... doped region 2325... district

2330... striping pattern 2340... striping pattern

2350...PV assembly 2365... metal contact layer

2375... metal contact layer 2405... vertically connects face (VMJ) photovoltaic cell more

2412... texturizing surfaces 2415... groove

2430... plane 2432... normal vector n

2700... reactor is amassed in system 2710... Shen

2712... spreader module 2714... doping module

2716... metallization module 2718... bus

2720... arrow 2730... package platforms

2732... Knockdown block 2734... specification module

2740... exchange link 2750... exchange link

2760... test module

Embodiment

Set forth the present invention referring now to accompanying drawing, wherein in institute's drawings attached, use identical Ref. No. to refer to identical assembly.For illustrative purposes, in following explanation, a large amount of details have been enumerated so that provide to a thorough of the present invention.Yet, may be obvious that, can not have to put into practice the present invention under the situation of these details.In other instance, show the structure and the device of the convention of many institutes with block diagram form, to promote to set forth the present invention.

In this explanation, the claim of enclosing scope or accompanying drawing, term " or " be intended to mean a comprising property " or " but not an exclusiveness " or ".Just, " X adopt A or B " is intended to mean these any one in arrangement of comprising property naturally, obviously finds out unless otherwise prescribed or in context.Just, if X adopts A, X adopts B, or X adopt A and B both, then in above-mentioned instance, all satisfy " X employing A or B " under the situation of any one.In addition, used article in this specification and the accompanying drawing " (a) " reaches " one (an) " and should be interpreted as usually and mean " one or more ", obviously refers to a singulative unless otherwise prescribed or based on context.

In addition, with respect to the nomenclature as the doping impurity material of the part of photovoltaic cell described herein, for the doping donor impurity, interchangeable using a technical term " n type " reaches " N type ", and it is also like this that term " n+ type " reaches " N+ type ".For the doping acceptor impurity, term " p type " reaches " P type " also interchangeable use, and term " p+ type " to reach " P+ type " also like this.For the purpose of clear, doping type also occurs with abbreviated form, and for example, the n type is marked as N, and the p+ type is indicated as P+ etc.Multilayer photovoltaic assembly or element cell are marked as one group of letter, wherein the doping type of each this layer of indication; For example, p type/n type connects face and is marked as PN, and p+ type/n type/n+ type connects face through the P+NN+ indication; Other mark that connects the face combination is also observed these annotations and comments.

Explain in further detail like hereinafter, the photovoltaic cell and the making that combine loss again that alleviate photo-generated carrier are provided.Be to reduce and to combine loss again, be coated with the diffusing, doping layer in this active PV assembly with the dielectric substance pattern that contacts between active photovoltaic (PV) assembly to reduce hard contact.Various pattern capable of using, and can one or more dielectrics be coated with one or more surfaces of this PV assembly.Can produce through patterned PV assembly or element cell and vertically connect the face photovoltaic cell more.Although patterned PV assembly can increase the series resistance of VMJ photovoltaic cell; And a making interpolation complexity that is used to produce the VMJ photovoltaic cell can be given in the one or more surfaces in this PV assembly of patterning; But the charge carrier loss that reduces diffusing, doping layer place in the PV assembly increases the efficient of photovoltaic cell, thereby and provides the PV that surpasses the manufacturing complexity that increases to operate advantage.What in addition, be that these active layers of buffer strip protection of a non-active layer collocation form avoid producing because of external force/hot factor (for example, welding) brings out stress or tension force.In addition, whenever the limit voltage that reaches electrolysis operation when (for example, being used for 1.6 volts of water electrolysis), the electric current that is produced by this VMJ flows to pass and is used for the electrolyte (for example, salt solution) that one of which decomposes (for example, hydrogen and oxygen).

Making comprises a method that is used to produce the photovoltaic cell that the photo-generated carrier with reduction combines to lose again, and this method comprises: through one group of surface of a dielectric coating patterning one photovoltaic (PV) assembly; The long-pending ohm contact in Shen in the patterned surface of this PV assembly one or more; One group of patterning PV assembly that storehouse has ohm contact vertically connects face (VMJ) photovoltaic cell to form one more; And handle formed VMJ photovoltaic cell to promote the deployment in the PV device, optimization photovoltaic usefulness or one of which combination.In addition, in the method, the one or more surfaces in this group surface comprise a diffusing, doping layer, and it is crossed over an extension area or and receives the limitation district.This method further comprises utilizes a patterned dielectric coating to come in this photovoltaic assembly, to produce the diffusing, doping district of being limited to as a mask.In addition, in the method, the material that is used for this ohm contact has an electric conducting material that is close to the thermal expansion coefficients that is matched with this photovoltaic assembly.In addition; In the method; One group of surface through a dielectric coating patterning one photovoltaic (PV) assembly comprises that Shen is long-pending with respect to one group of band of one first angular orientation of one < qrs>crystallization direction in this PV assembly or with in one group of band of one second angular orientation that departs from < qrs>crystallization direction in this PV assembly at least one, wherein q, r and s Miller indices.In addition, in the method, the density of the band at least one in these slice-group is stipulated with the radiation intensity of its running by the PV assembly of these a plurality of based semiconductors of expection at least in part.In addition, in the method, this processing action comprises this formed VMJ photovoltaic cell of cutting roughly (qrs) crystal plane is exposed to the open air to daylight, wherein q, r and s Miller indices.In addition, in the method, form the stack current coupling of the patterned PV assembly with ohm contact of this VMJ photovoltaic cell.

In addition, also provide in order to make and to handle the system of photovoltaic cell according to characteristic described herein.In an aspect, disclose a kind of equipment, it comprises: be used for the member through one group of surface of a dielectric coating patterning one photovoltaic (PV) assembly; The member that is used for long-pending hard contact in Shen on one or more of the patterned surface of this PV assembly; Be used for one group of patterned PV assembly that storehouse has a hard contact with form one vertically connect face (VMJ) photovoltaic cell more member; And be used for handling formed VMJ photovoltaic cell to promote the deployment of a PV device, the member of optimization photovoltaic usefulness or one of which combination.The equipment that is disclosed further comprises and is used for utilizing the member that comes to produce at this photovoltaic assembly the diffusing, doping district of being limited to once the patterned electricity dielectric coated as a mask.In addition, this equipment comprises at least one member of a PV assembly that is used for surveying a PV assembly, has dielectric coating, the PV assembly with hard contact or the VMJ photovoltaic cell that forms.

Fig. 1 graphic extension aspect according to the present invention as one vertically connect the part of face (VMJ) battery 120 more a perspective schematic view of a grooveization surperficial 100.These veining 100 configurations make refract light can be directed leaving p+ and n+ diffusing, doping district, produce required charge carrier simultaneously.Correspondingly, incident light can reflect in the plane with a normal vector n 110.The PN that this kind plane 110 is parallel to VMJ 120 connects facial plane, and can comprise the section configuration of groove 100.In addition, can the surface that an ARC is applied to veining 100 be absorbed with the incident light that increases in this battery.Change speech, the orientation on plane 110 is approximately perpendicular to the direction of stack cell battery 111,113,115.Should be appreciated that, also can contain other non-perpendicular orientation (crystalline plane that for example, exposes to the open air) and all these aspects and be regarded as and belong in the category of the present invention with various angles.

Fig. 2 graphic extension is used for the exemplary texture with the surface grooveization of this VMJ, and this VMJ receives light on this surface.This kind grooveization can be the form of chamber connected in star; For example; As (for example have various angles; 0 °＜θ＜180 °) " V " shape section configuration, " U " shape section configuration and like that, be approximately perpendicular to direction and/or the PN that is roughly parallel to this VMJ that storehouse forms the element cell of this VMJ comprising the plane of this section configuration and connect face.Should be appreciated that, the veining 210,220,230 of VMJ of the present invention PN connect the directed of face and/or with the interaction of incident light on different with the prior art that is used for general silicon photovoltaic cell texture.For example; General silicon photovoltaic cell is usually through veining penetrating with prevention light; Make that more approach PN connects face (horizontal location) and absorb more longer wavelengths being used for the better electric current collection of charge carrier, thereby and alleviate the difference spectra of longer wavelength in the solar spectrum is responded.By contrast, this does not need among VMJ of enhanced spectrum response of longer wavelength in comprising the vertical junction face and providing solar spectrum of the present invention.

But; The groove that is used for embodiment of the present invention (for example; The V groove) a aspect comes ameliorate body to combine loss-(opposite with the general solar energy surface of using veining, this reduces reflection, or cause to become through the light that reflects or reflect more approach face) again through reducing volume.Specific; The VMJ battery has represented to short wavelength and both better charge carrier electric current collection of long wavelength, and wherein this short wavelength response is because the level of elimination top surface place one high doped connects face and this long wavelength responds because the collection efficiency of the enhancing of vertical junction face.As another instance; If substitute chamber of the present invention connected in star texture; With other texture (for example; At random, pyramid, vaulted and similar protruding configuration) be embodied as the part of VMJ, then incident light becomes on all directions and reflects, thereby in p+ and n+ diffusion region, produces light absorption and therefore produce the efficient that reduces.Should be appreciated that these " U " reach " V " connected in star in that exemplary and other configuration also belong in the category of the present invention in nature.

Fig. 3 graphic extension can be implemented a configuration of the element cell 311,313,317 of groove texture on a side 345 according to an aspect of the present invention.Such as preamble explanation, VMJ 315 itself is formed by a plurality of whole battery units 311,313,317 (1 to k, k one integer) that engage, wherein each battery unit itself is formed by the substrate or layer (not shown) of storehouse.For example; Each battery unit 311 can comprise storehouse a plurality of parallel semiconductor substrate together; And the semi-conducting material by doping impurity constitutes, and the semi-conducting material of this doping impurity forms a PN and connects face and strengthen towards this kind PN and connect one " in-building type " electrostatic dispersion field that the minority carrier of face moves.Should be appreciated that, can various N+ types and P type doped layer be formed part and these configurations that thing is embodied as these battery units and also belong in the category of the present invention.

Correspondingly, the texture on the optical receiving surface 345 promotes that refract light is directed leaving p+ and n+ diffusing, doping district, produces required charge carrier simultaneously.Therefore, incident light can reflect comprising the section configuration and be approximately perpendicular in the plane of this direction (for example, perpendicular to vector n) of these element cells of storehouse.

One particular aspect of Fig. 4 graphic extension one element cell, one of which array can form the VMJ battery with veining grooveization of the present invention.Element cell 400 is included in storehouse layer 411,413,415 together in the configuration of an almost parallel.These layers 411,413,415 can further comprise the semi-conducting material of doping impurity, 413 1 kinds of conductivity type in its middle level and layer 411 1 opposite conductivity type-connect face to define a PN at intersection point 412 places.Equally, the conductivity type that layer 415 can be identical with layer 413-in addition through roughly higher impurity concentration connects the in-building type electrostatic dispersion field that the minority carrier of face 412 moves thereby produce to strengthen towards PN.Can these element cell integral body be bonded together to form a VMJ and according to the surface of various aspect grooveizations of the present invention.

According to an aspect again; For making this VMJ from a plurality of batteries 400; Can identical PNN+ (or NPP+) face of connecing be formed the degree of depth of about 3 to 10 μ m to the flat wafer of high resistivity (for example, being higher than 100ohm-cm) (having about 0.008 inch thickness) of N type (or P type) silicon at first.Subsequently,, wherein a flake aluminum is inserted between it, wherein to connect face and crystal orientation can equidirectional directed for the PNN+ of each wafer with these PNN+ wafer storehouses together.In addition, can adopt aluminium-silicon congruent melting alloy, or have the metal of approximate match in the thermal coefficient of expansion of silicon, for example molybdenum or tungsten.Next, can these Silicon Wafers and aluminium interface be fused together, make and can the assembly of storehouse be bonded together.The supplied of one non-active layer configuration that can also be stacked over end layer top and/or the below of this VMJ battery in addition has the roughly buffer strip of low-resistivity; Thereby implement the barrier that these active layers of protection are avoided stress and/or the tension force of harmful form (heat/mechanical pressure, torsion, moment, the shearing and like that for example, between the making of VMJ and/or operational period, can in this VMJ, bring out).Can the surface grooveization of this kind battery be combined loss again with ameliorate body then, institute sets forth in detail like preamble.Should be appreciated that, also can adopt other material, for example germanium and titanium.Equally, also can adopt aluminium-silicon congruent melting alloy.

Fig. 5 graphic extension is with a correlation technique 500 of a surface grooveization of the reception light of a VMJ.Although this paper is with said exemplary methods graphic extension and be illustrated as the piece that row are represented variety of event and/or action, the present invention is not limited by the illustrated order of these pieces.For example, according to the present invention, except that the illustrated order of this paper, some action or incident can different order and/or are taken place simultaneously with other action or incident.In addition, implement according to not all illustrated pieces of needs, incident or action of a method of the present invention.In addition, should be appreciated that, can method illustrated with this paper and that set forth combine to implement according to exemplary methods of the present invention and other method, and also can the system and the equipment of graphic extension or elaboration do not combine enforcement with other.

At first, and at 510 places, as preamble set forth in detail to form and have a plurality of battery units that PN connects face.Such as preamble explanation, each battery unit itself can comprise storehouse a plurality of parallel semiconductor substrate together.Each layer can constitute by forming the impurity doped semiconductor material that a PN connects face, and comprises that further enhancing connects one " in-building type " electrostatic dispersion field that the minority carrier of face moves towards this kind PN.Subsequently, and, a plurality of these type of battery units are integrated to form a VMJ, wherein also can buffer strip be embodied as the protection (stress/strain of for example, during making, bringing out) to these batteries above that at 520 places.Next and at 530 places, on a surface of the reception light of this VMJ battery, can form chamber connected in star (for example) via the stroke blade saw, be approximately perpendicular to the direction that storehouse forms these element cells of this VMJ comprising the plane of section configuration.Subsequently and at 540 places, can reflect incident light comprising this section configuration (and/or be parallel to these PN connect face) and be approximately perpendicular in the plane of direction of these element cells of storehouse.

Fig. 6 graphic extension aspect according to the present invention as a schematic block diagrams of a configuration of the buffer strip of the part that vertically connects face (VMJ) battery more.VMJ615 itself is formed by a plurality of whole battery units 611,617 (1 to n, n one integer) that engage, and wherein each battery unit itself is formed by the substrate or the layer (not shown) of storehouse.For example; Each battery unit 611,617 can comprise storehouse a plurality of parallel semiconductor substrate together; And the semi-conducting material by doping impurity constitutes, and the semi-conducting material of this doping impurity forms a PN and connects face and strengthen towards this kind PN and connect one " in-building type " electrostatic dispersion field that the minority carrier of face moves.Correspondingly; The various active layers that can protect any end place of being positioned a VMJ battery 615 part of its battery unit (and as) (for example; Nn+ and/or p+n connect face; Or pp+ and/or pn+ connect face) avoid stress and/or the tension force (heat/mechanical pressure, torsion, moment, the shearing and like that for example, between the making of VMJ and/or operational period, can in this VMJ, bring out) of harmful form.

In addition, can form each in the buffer strip 610,612, alleviate simultaneously and/or eliminate the automatic doping of not expecting via material with ohm contact of low-resistivity (for example, having arbitrary scope) roughly less than the upper limit of about 0.5ohm-cm.For example; Can (for example use other p type dopant through the low-resistivity wafer that adopts the p type to mix; Aluminium alloy) form buffer strip 610,612, with the risk that alleviates automatic doping (with adopt can produce do not expect the n type wafer that pn connects face compare-produce one roughly during the low-resistivity ohm contact when expectation).

One particular aspect of Fig. 7 graphic extension one element cell, one of which array can form a VMJ battery.Element cell 700 is included in storehouse layer 711,713,715 together in the configuration of an almost parallel.These layers 711,713,715 can further comprise the semi-conducting material of doping impurity, 713 1 kinds of conductivity type in its middle level and layer 711 1 opposite conductivity type-connect face to define a PN at intersection point 712 places.Equally, the conductivity type that layer 715 can be identical with layer 713-in addition through roughly higher impurity concentration connects the in-building type electrostatic dispersion field that the minority carrier of face 712 moves thereby produce to strengthen towards PN.Can these element cell integral body be bonded together to form a VMJ, wherein can locate a buffer strip of the present invention with protect this VMJ and form its associated unit battery and/or the layer.

According to an aspect again; For making this VMJ from a plurality of batteries 700; Can identical PNN+ (or NPP+) face of connecing be formed the degree of depth of about 3 to 10 μ m to the flat wafer of high resistivity (for example, being higher than 100ohm-cm) (having about 0.008 inch thickness) of N type (or P type) silicon at first.Subsequently, with these PNN+ wafer storehouses together, wherein a thin aluminium lamination inserts between each wafer, and wherein to connect face and crystal orientation can equidirectional directed for the PNN+ of each wafer.In addition, can adopt aluminium-silicon congruent melting alloy, or have the metal of approximate match in the thermal coefficient of expansion of silicon, for example molybdenum or tungsten.Next, can these Silicon Wafers and aluminium interface be fused together, make and can the assembly of storehouse be bonded together.In addition, also can adopt aluminium-silicon congruent melting alloy.Should be appreciated that, can part and these configurations that various N+ types and P type doped layer are embodied as these battery units also be belonged in the category of the present invention.

The supplied of one non-active layer configuration that can also be stacked over end layer top and/or the below of this VMJ battery in addition has the roughly buffer strip of low-resistivity; Thereby implement the barrier that these active layers of protection are avoided stress and/or the tension force of harmful form (heat/mechanical pressure, torsion, moment, the shearing and like that for example, between the making of VMJ and/or operational period, can in this VMJ, bring out).

Lip-deep one side that Fig. 8 graphic extension is an end layer 831 (841) of element cell 830 (840) forms an exemplary section of a buffer strip of thing 810 (812) forms, and its part forms VMJ battery 800.This equilateral formation thing 810,812 serves as a protection border of the active layer of these battery units, and further partly forms the framework of VMJ battery 800 so that carrying and transportation (for example, a low-resistivity buffer strip and the edge or the terminal contacts of this VMJ battery).Equally, through realizing the firm grip to VMJ battery 800, this limit forms thing and also is convenient to the operation relevant with the anti-reflective coating (for example, when between operational period, keeping this battery (for example, through the mechanical grip to it) securely, can apply coating equably).In addition; Can Shen is long-pending make during entity ground this equilateral formation thing orientated as adjoined other limit formation thing, wherein can under the situation of not destroying element cell 830,840, easily remove and by mistake penetrate into arbitrary on the contact surface downwards and do not expect the dielectric coating material.Representing the limit of buffer strip to form thing 810 (812) can be by the silicon of roughly low-resistivity and high doped (for example; About 0.008 " thickness) form, wherein this limit forms thing and can contact the conductive lead wire that a VMJ battery another VMJ battery in a photovoltaic cell array is cut apart subsequently.In addition, because the roughly low-resistivity of this buffer strip, do not require that these conductive lead wires have and the electrically contacting fully of this buffer strip.Therefore, it can partly contact, and more for example contact or the contact of row point provide good electrical contact simultaneously again.Should be appreciated that Fig. 8 is in exemplary in nature, and other version (for example, the buffer strip 810 on the surface of the arrival 800 that forms during fabrication wherein 810 is engaged to active layer 841) also belongs in the category of the present invention.For example, 810 shape can be represented to the part lead-in wire contact like the metal layer on the described buffer strip of preamble.

These conductive lead wires can be the form of electrode layer, its through long-pending one first electric conducting material in Shen on a substrate form-and can comprise tungsten, silver, copper, titanium, chromium, cobalt, tantalum, germanium, gold, aluminium, magnesium, manganese, indium, iron, nickel, palladium, platinum, zinc, its alloy, indium tin oxide, other conduction and semiconductive metal oxide, nitride and silicon dioxide, polysilicon, through doped amorphous silicon and various metal composites alloy.In addition, electrode can adopt other conduction or semiconductive polymer, oligomer or monomer through doping or undoped, for example PEDOT/PSS, polyaniline, polythiophene, polypyrrole, its derivative and like that.In addition, because the monoxide layer that some metal can have the usefulness that can influence the VMJ battery nocuously formed thereon, so nonmetallic materials (for example, amorphous carbon) also can be used for electrode formation.Should be appreciated that the limit of Fig. 8 forms thing and also belongs in the category of the present invention in exemplary in nature and other buffer strip configuration (for example, rectangle, circle, section) of having with a surperficial contact range of these active layers.

In addition; Can various aspects of the present invention be embodied as the part of wafer of the Miller indices (111) of the orientation with the crystalline plane that is associated that is used for these buffer strips, it is mechanically stronger and etching is slower that it is regarded as than is generally used for (100) crystal orientation silicon of making VMJ element cell initiatively.Correspondingly, the low-resistivity silicon layer can have a crystal orientation different with the crystal orientation of these active cell batteries, wherein through adopting this kind alternative orientations, a device of the mechanical strength/terminal contacts with improvement is provided.In other words; Compare with the end layer that non-active (111) is directed; (100) the edge etching of directed element cell comparatively fast and in fact finishing have the angle of the active cell battery of this kind crystal orientation, be used to weld or a stabilizing arrangement structure more of the more high mechanical properties of link contact in addition thereby produce to have.

Fig. 9 is illustrated in the vertical end layer place that connects face (VMJ) photovoltaic cell of a high voltage silicon more and adopts buffer strip so that a correlation technique 900 of a barrier of protecting its active layer to be provided.Although this paper is with said exemplary methods graphic extension and be illustrated as the piece that row are represented variety of event and/or action, the present invention is not limited by the illustrated order of these pieces.For example, according to the present invention, except that the illustrated order of this paper, some action or incident can different order and/or are taken place simultaneously with other action or incident.In addition, implement according to not all illustrated pieces of needs, incident or action of a method of the present invention.In addition, should be appreciated that, can method illustrated with this paper and that set forth combine to implement according to exemplary methods of the present invention and other method, and also can the system and the equipment of graphic extension or elaboration do not combine enforcement with other.At first, and at 910 places, as preamble set forth in detail to form and have a plurality of battery units that PN connects face.Such as preamble explanation, each battery unit itself can comprise storehouse a plurality of parallel semiconductor substrate together.Each layer can constitute by forming the impurity doped semiconductor material that a PN connects face, and comprises that further enhancing connects one " in-building type " electrostatic dispersion field that the minority carrier of face moves towards this kind PN.Subsequently and at 920 places, a plurality of these type of battery units are integrated to form a VMJ.Next and at 930 places, can implement to contact a buffer strip of the end layer of this VMJ, so that a barrier of its active layer of protection to be provided.This (etc.) buffer strip can be the form of a non-active layer configuration of the end layer top that be stacked over this VMJ battery in addition and/or below.The part that then can be this VMJ be embodied as a photovoltaic cell at 940 places.

Figure 10 graphic extension comprises the schematic cross sectional view 1000 of a solar energy assembly of a modular arrangements 1020 of photovoltaic (PV) battery 1023,1025,1027 (1 to k, wherein k one integer).Each PV battery can adopt a plurality of VMJ that have according to the buffer strip of an aspect of the present invention.Usually, each in the PV battery (also being called photovoltaic cell) 1023,1025,1027 can convert electric energy into light (for example, daylight).The modular arrangements 1020 of these PV batteries can comprise Standardisation Cell or the section that promotes structure and a flexible configuration is provided.

In an exemplary aspect; In the

photovoltaic cell

1023,1025,1027 each can comprise a DSSC (DSC) of a plurality of glass substrate (not shown)s; Wherein transparent conducting coating on it, for example a fluorine doped tin oxide layer (for example) are amassed in Shen.This kind DSC can further comprise semi-conductor layer, for example TiO ₂Particle, a sensitizing dyestuff layer, an electrolyte and a catalyst layer, for example the Pt-(not shown)-it can be sandwiched between these glass substrates.For example, can be on the coating of this glass substrate the further long-pending semi-conductor layer in Shen, and can with this dye coating as a monolayer adsorption on this semiconductor layer.Therefore, can form an electrode and an opposite electrode through a redox flows with the electronics of controlling between it.

Correspondingly, the circulation of

battery

1023,1025,1027 experience excitation, oxidation and reduction, this produces one of electronics and flows, for example electric energy.For example, the dye molecule in the incident light 1005 excitation dye coatings, wherein the dye molecule of light stimulus injects electronics the conduction band of this semiconductor layer subsequently.This can cause the oxidation of these dye molecules, and wherein institute's injected electrons can flow through this semiconductor layer to form an electric current.After this, these electronics are original electrolyte also at the catalyst layer place, and will be reversed to a neutral state through the dye molecule of oxidation.The circulation that can repeat this kind excitation, oxidation and reduction continuously is to provide electric energy.

Figure 11 graphic extension is adopted a vertical schematic block diagrams that connects the electrolysis system of face (VMJ) battery 1110 according to an aspect of the present invention to electrolysis more.Can partially or even wholly VMJ 1110 be immersed in water/electrolyte, as the part of transparent vessel (for example, quartz, glass or plastics) 1130.When incident light 1135 runs into the surperficial 1137 time of this kind VMJ 1110, can in this whole VMJ and/or on the surface 1137 above that, form a plurality of electrolysis electrodes that are anode and/or negative electrode form.When reaching the limit voltage of electrolysis, flow then and pass water and be hydrogen and oxygen being formed at the electric current that flows between these electrolysis electrodes on 1137 of surface water decomposition.VMJ 1110 comprises a plurality of whole battery units 1111,1117 (1 to n, wherein n one integer) that engage, and wherein each battery unit itself is formed by the substrate or the layer (not shown) of storehouse.For example; Each battery unit 1111,1117 can comprise storehouse a plurality of parallel semiconductor substrate together; And the semi-conducting material by doping impurity constitutes, and the semi-conducting material of this doping impurity forms a PN and connects face and strengthen towards this kind PN and connect one " in-building type " electrostatic dispersion field that the minority carrier of face moves.When incident light 1135 is directed to surperficially 1137 the time, in each district of VMJ1110, then can form a plurality of negative electrodes and anode, it is subsequently with the electrode that acts on the electrolysis operation.

When reaching the limit voltage of electrolysis, the electric current that between these electrolysis electrodes, flows flows and passes this electrolyte and be hydrogen and oxygen with water decomposition.Usually, this kind decomposes limit voltage and is positioned at a scope of 1.18 volts to 1.6 volts to divide water and generation hydrogen and oxygen.Should be appreciated that a plurality of battery units (a plurality of batteries that for example, are connected in series) through storehouse can reach more high voltage.In addition, can further adopt catalyst material to increase the semiconductor corrosion that hydrogen and oxygen evolution efficient and reduction are caused by high electrode current potential and electrolyte solution.In addition, this electrolyte can form (catalyst of for example, being processed by iridium, one of which bianry alloy or its monoxide based on iridium) by arbitrary solution that can not influence the stack layer that forms this VMJ battery nocuously.In related aspect, ultrasonic transducers (transducer) is steeped to discharge the oxygen or the hydrogen that keep attaching on these electrolysis electrodes with this electrolysis system interaction operationally.

Can further VMJ 1110 be positioned on the heat regulation assembly 1119, heat regulation assembly 1119 removes the heat that produces from the focus zone, is maintained in the predetermined level with the temperature gradient with this VMJ battery.This kind heat regulation assembly 1119 can be the form of a fin arrangement, and it comprises a plurality of fin of a dorsal part that is surface mounted to this VMJ, and wherein each fin can further comprise a plurality of fin (not shown)s that are approximately perpendicular to this dorsal part extension.These fins can enlarge a surface area of fin, and to increase the contact with coolant (for example, electrolyte, such as cooling fluids such as water), this coolant can be further used for from these fins and/or photovoltaic cell heat dissipation.Therefore, can conduct heat, and make it get into electrolyte on every side, and/or not influence the material of electrolysis operation through this fin from this VMJ.In addition; Can via to the heat conduction path of these fin (for example; Metal level) conduction is from the heat of this VMJ battery, alleviating the direct entity or the heat conduction of these fin to these VMJ batteries, and is provided for a scalable solution of the appropriate operation of this electrolysis.

In a related aspect, can these fin be positioned in various planes or the three-dimensional configuration, with the heat flow of keeping watch on, regulating and this VMJ battery is left in management all sidedly.In addition; Each fin can further adopt heat/electric structure (not shown), and these structures can have a spiral, reverse, spiral, labyrinth shape or in a part, have a comparatively dense pattern distribution of line and in other part, have other planform of the more not intensive relatively pattern distribution of line.For example, a part of these structures can be formed by the material that high relatively isotropic conductivity is provided, and another part can be formed by the material that high thermoconductivity is provided on other direction.Correspondingly; Each heat of heat regulation assembly/electric structure provides a heat conduction path; This heat conduction path can dissipate from the heat of focus, and makes its each heat conducting shell or fin that is associated of getting into calorie adjusting device, thereby and promotes this electrolysis operation.Should be appreciated that, can cool off these fin via an independent coolant that separates with this electrolyte medium.

Figure 12 graphic extension further aspect that comprises the protrusion 1211,1215 of the metal level that is associated with the electrode of an individual unit battery 1201 of the present invention.These protrusions 1211,1215 are given prominence to (for example, some millimeters) to promote this electrolysis to make via increasing by a contact surface area from the surface 1241 of VMJ 1200.In addition, can be during the VMJ battery be made, with roughly thin electrode catalyst material (for example, platinum, RuO ₂Or titanium) layer is incorporated into to this metallization, produces to strengthen hydrogen.In addition, selecting the electrode catalyst material to have sizable flexibility, is because of saying that for the electrode catalyst material this metallized n negativity (-) side 1211 can be different from p+ positivity (+) side 1215.Should be appreciated that those who familiarize themselves with the technology can easily select to strengthen, and hydrogen produces and stable and make compatible catalyst material with the VMJ battery.When incident light 1235 arrives the surface 1241 of this VMJ, can form a plurality of cathode/anode above that.For example, a reduction reaction takes place in (at electronegative negative electrode place) in the some districts on this VMJ, wherein gives the electronics (e-) of hydrogen cation from this negative electrode, to form hydrogen (with the half-reaction of acid balance):

Negative electrode (reduction): 2H+ (aq)+2e-→ H2 (g)

Give hydrogen cation from the electronics (e-) of this negative electrode to form hydrogen (with the half-reaction of acid balance).

At the anode place of positively charged, an oxidation reaction takes place, thereby produces oxygen and give this cathode electronics to accomplish this circuit:

Anode (oxidation): 2H ₂O (l) → O ₂(g)+4H+ (aq)+4e-

Also can come equilibrium phase half-reaction together through following alkali.Generally speaking, not all half-reaction should come balance through acid or alkali.Generally speaking, for increasing half-reaction, both should come balance through acid or alkali usually for it.

Negative electrode (reduction): 2H ₂O (l)+2e-→ H ₂(g)+2OH-(aq)

Anode (oxidation): 4OH-(aq) → O ₂(g)+2H ₂O (l)+4e-

Make up arbitrary half-reaction to producing identical total decomposition of water to oxygen and hydrogen:

Overall reaction: 2H ₂O (l) → 2H ₂(g)+O2 (g)

Indicated like preceding text, the twice of the number of the hydrogen molecule that is produced so the number of oxygen molecule.Temperature and the pressure of supposing two kinds of gases equate that therefore the hydrogen that is produced have the two volumes of the oxygen that is produced.Pass four times of number of twice and the oxygen molecule that produced of number of the hydrogen molecule that number produced of the electronics of water through promoting.Such as preamble explanation, if add a water-soluble electrolyte, then the conductivity of water significantly raises.Correspondingly, this electrolyte is separated into cation and anion; Wherein these anion rush at anode and neutralize the wherein H+ of the positively charged of accumulation; Similarly, these cations rush at negative electrode and neutralize the wherein electronegative OH-of accumulation.This allows the continuous flow of electricity.Should be appreciated that the material that should combine to be used for the VMJ battery is considered electrolytical selection, so that can not influence its material and operation nocuously.Select an electrolytical extra factor about abandoning an electronics from this electrolytical anion and hydroxide ion competition.Electrolytic anion with standard electrode potential littler than hydroxide possibly substitute this hydroxide and oxidized, and therefore will not produce any oxygen.Equally, reduction is had a cation of a standard electrode potential bigger than a hydrogen ion, and will not produce any hydrogen.For alleviating these situation, following cation has than the low electrode potential of H+ and therefore is suitable for as electrolyte cation: Li ⁺, Rb ⁺, K ⁺, Cs ⁺, Ba ²⁺, Sr ²⁺, Ca ²⁺, Na ⁺And Mg ²⁺Also can use sodium and lithium, not form not expensive soluble salt because of it if this can not influence this VMJ battery-be nocuously.

One voltage-the distance Curve of each point on Figure 13 graphic extension VMJ 1310, wherein element cell 1311,1317 intersects or shares a common border.As illustrated, VMJ 1310 comprises a plurality of element cells 1311,1317 that are connected in series, and wherein this voltage linear function of can be used as the number of storehouse battery together increases (for example, on trunnion axis from left to right).As illustrated among Figure 13,0.6 volt of the voltage difference between the two ends of battery 1, and pass through stacked cells 2 above that, kind of the voltage difference of this in assembled battery increases to 1.2 volts.Equally, through stacked cells 3 above that, this voltage difference can increase to 1.8 volts.Therefore, electrolysis can take place between lip-deep any two points above the threshold value that is used for decomposition water of this VMJ.For example, connect the open circuit voltage of face VMJ battery under 1000 sun optically focused for 1, can produce 32 volts (for example, each element cell is 0.8 volts).Suppose that with 1.6 volts of initial electrolysis then only two element cells just are enough to provide this voltage.In another aspect, when current loading increased, the voltage of being confirmed by the VMJ battery IV characteristic that under 1000 sun optically focused, is in maximum power was reduced to 0.6 volt of 24 volts or every element cell.Therefore, can need three element cells, its contribution is used for to this cell reaction power supply for 1.8 volts.(electrolysis under the higher current density also can need an overvoltage usually.)

Although should be further appreciated that under the background of a single VMJ and set forth electrolysis, the present invention is not so limited and can be embodied as the part of a plurality of VMJ batteries (for example, parallel connection and/or series connection, or running ground separation each other).Through the current relationship of confirming between each district that represents different voltages of VMJ, to form, a customizable VMJ battery design is to be provided at the extra contact area that need put high current everywhere.For example, can reduce pick-up current density (needing) through the metallization thickness that increases each some place as if this.In addition, can adopt various forms of pressurizations to improve the collection (for example, screening mechanism, filter mechanism and like that) of the product (for example, hydrogen, oxygen) of electrolytic efficiency and/or decomposition.Should be appreciated that the present invention is not limited to the electrolysis of water and can be suitably also belongs in the category of the present invention with the electrolysis of interactive other compound of VMJ.

Figure 14 graphic extension aspect according to the present invention is via a correlation technique 1400 of the water electrolysis of a VMJ.Although this paper is with said exemplary methods graphic extension and be illustrated as the piece that row are represented variety of event and/or action, the present invention is not limited by the illustrated order of these pieces.For example, according to the present invention, except that the illustrated order of this paper, some action or incident can different order and/or are taken place simultaneously with other action or incident.In addition, implement according to not all illustrated pieces of needs, incident or action of a method of the present invention.In addition, should be appreciated that, can method illustrated with this paper and that set forth combine to implement according to exemplary methods of the present invention and other method, and also can the system and the equipment of graphic extension or elaboration do not combine enforcement with other.Initial and at 1410 places, electrolyte solution is introduced in the container that contains VMJ, this VMJ is fully or roughly submergence in this container.Make at 1420 places then this kind system stand incident light and certainly this VMJ produce an electric current and flow.At 1430 places, this incident light can produce water electrolysis in whole electrolyte solution, and wherein meets or exceeds arbitrary position of a threshold value (for example, about 1.2 volts) that is used for decomposition water, and electrolysis takes place.For example, cross over the voltage (for example) that each element cell can produce 0.6 volt and between a first module battery area and one the 3rd element cell district, electrolysis can take place to one 1000 sun optically focused.Correspondingly, can various collecting mechanisms (for example, barrier film, sieve plate and like that) be positioned between the district that voltage surpasses the threshold value (for example, about 1.6) be used for electrolysis, thereby and collect the hydrogen that is produced at 1440 places.Should be appreciated that, also can adopt for example other collection mechanism such as collected downstream.

Figure 15 graphic extension can be used for the VMJ battery according to the electrolysis of an aspect of the present invention.VMJ1515 itself is formed by a plurality of whole battery units 1511,1517 (1 to n, n one integer) that engage, and wherein each battery unit itself is formed by the substrate or the layer (not shown) of storehouse.For example; Each battery unit 1511,1517 can comprise storehouse a plurality of parallel semiconductor substrate together; And the semi-conducting material by doping impurity constitutes, and the semi-conducting material of this doping impurity forms a PN and connects face and strengthen towards this kind PN and connect one " in-building type " electrostatic dispersion field that the minority carrier of face moves.In addition; Through implementing one or more buffer strip 1510,1512; The various active layers that can protect any end place of being positioned at a VMJ battery 1515 part of its battery unit (and as) (for example; Nn+ and/or p+n connect face) avoid stress and/or the tension force (heat/mechanical pressure, torsion, moment, the shearing and like that for example, between the making of VMJ and/or operational period, can in this VMJ, bring out) of harmful form.Can form each in these buffer strips 1510,1512 via material, alleviate simultaneously and/or eliminate the automatic doping of not expecting with low-resistivity ohm contact (for example, having arbitrary scope) roughly less than the upper limit of about 0.5ohm-cm.For example; Can (for example use other p type dopant through the low-resistivity wafer that adopts the p type to mix; Aluminium alloy) form buffer strip 1510,1512, with the risk that alleviates automatic doping (with adopt can produce do not expect the n type wafer that pn connects face compare-produce one roughly during the low-resistivity ohm contact when expectation).For example, also can adopt catalyst material (for example, platinum, titanium and like that) at the terminal contacts place of this VMJ, to promote the electrolysis operation.

One particular aspect of Figure 16 graphic extension one element cell 1600, one of which array can be formed for a VMJ battery of electrolysis of the present invention.Element cell 1600 is included in storehouse layer 1611,1613,1615 together in the configuration of an almost parallel.These layers 1611,1613,1615 can further comprise the semi-conducting material of doping impurity, 1,613 one kinds of conductivity type in its middle level and layer 1,611 one opposite conductivity type-connect face to define a PN at intersection point 1612 places.Equally, the conductivity type that layer 1615 can be identical with layer 1613-in addition through roughly higher impurity concentration connects the in-building type electrostatic dispersion field that the minority carrier of face 1612 moves thereby produce to strengthen towards PN.Can these element cell integral body be bonded together to form a VMJ (for example, engaging the use catalyst material to strengthen electrolysis to this kind), it sets forth the execution electrolysis in detail like preamble.

According to an aspect again; For making VMJ from a plurality of batteries 1600; Can identical PNN+ (or NPP+) face of connecing be formed a degree of depth of about 3 to 10 μ m inches to the flat wafer of high resistivity (for example, being higher than 100ohm-cm) (having about 0.008 inch thickness) of N type (or P type) silicon at first.Subsequently, with these PNN+ wafer storehouses together, wherein a thin aluminium lamination inserts between each wafer, and wherein to connect face and crystal orientation can equidirectional directed for the PNN+ of each wafer.In addition, can adopt aluminium-silicon congruent melting alloy, or also can adopt and have the metal of approximate match, for example metal such as germanium and titanium or for example metal such as molybdenum or tungsten in the thermal coefficient of expansion of silicon.Next, can these Silicon Wafers and aluminium alloy interface be fused together, make can the assembly of storehouse to be bonded together (for example, further comprising catalyst material).Should be appreciated that, also can adopt other material, for example germanium and titanium.Equally, also can adopt aluminium-silicon congruent melting alloy.Should be further appreciated that and to select electrolyte to make it can not influence the operation of VMJ nocuously, and/or cause the chemical reaction harmful VMJ.Should be appreciated that, can various N+ types and P type doped layer be formed part and these configurations that thing is embodied as these battery units and also belong in the category of the present invention.

The present invention that Figure 17 graphic extension comprises the VMJ with a texturizing surfaces that is used for electrolysis is an aspect again.Illustrate an aspect according to the present invention as one vertically connect the part of face (VMJ) battery 1720 more a perspective schematic view of a grooveization surperficial 1700.These veining 1700 configurations make refract light can be directed leaving p+ and n+ diffusing, doping district, produce required charge carrier simultaneously.Correspondingly, incident light can reflect in the plane with a normal vector n 1710.The PN that this kind plane 1710 is parallel to VMJ 1720 connects facial plane, and can comprise the section configuration of groove 1700.In other words, the orientation on plane 1710 is approximately perpendicular to the direction of stack cell battery 1711,1713,1715.This kind groove surface can increase the efficient that electrolysis is made.

Figure 18 graphic extension is used for the exemplary texture with the surface grooveization of this VMJ, and this surface receives light above that to be used for an electrolytical electrolysis.This kind grooveization can be the form of chamber connected in star; For example; As (for example have various angle θ; 0 °＜θ＜180 °) " V " shape section configuration, " U " shape section configuration and like that, be approximately perpendicular to the direction that storehouse forms the element cell of this VMJ comprising the plane of this section configuration, and/or the PN that is roughly parallel to this VMJ connects face.Should be appreciated that, the veining 1810,1820,1830 of VMJ of the present invention PN connect the directed of face and/or with the interaction of incident light on different with the prior art that is used for general silicon photovoltaic cell texture.For example; General silicon photovoltaic cell is usually through veining penetrating with prevention light; Make that more approach PN connects face (horizontal location) and absorb more longer wavelengths being used for the better electric current collection of charge carrier, thereby and alleviate the difference spectra of longer wavelength in the solar spectrum is responded.By contrast, this does not need among VMJ of enhanced spectrum response of longer wavelength in comprising the vertical junction face and providing solar spectrum of the present invention.

But; The groove that is used to implement Fig. 7 (for example; The V groove) a aspect comes ameliorate body to combine loss-(opposite with the general solar energy surface of using veining, this reduces reflection, or cause to become through the light that reflects or reflect more approach face) again through reducing volume.Specific; The VMJ battery has represented to short wavelength and both better charge carrier electric current collection of long wavelength, and wherein this short wavelength response is because the level of elimination top surface place one high doped connects face and this long wavelength responds because the collection efficiency of the enhancing of vertical junction face.As another instance; If substitute chamber of the present invention connected in star texture; With other texture (for example; At random, pyramid, vaulted and similar protruding configuration) be embodied as the part of VMJ, then incident light becomes on all directions and reflects, thereby in p+ and n+ diffusion region, produces light absorption and therefore produce the efficient that reduces.In addition, can apply reflectance coating to the dorsal part of this VMJ battery with further enhancing light absorption.

In another aspect, the present invention especially can produce the usefulness of the high intensity solar cell (for example, edge illumination or vertical contact structure) of a roughly high electric power output under the standard of high-level radiation position about improvement photovoltaic cell (for example, solar cell).The various designs of PV assembly of enumerating the element cell that is formed for making the VMJ photovoltaic cell in this article are to reduce the loss of combination again of photo-generated carrier via patterned contact.

This VMJ battery has the intrinsic theoretical upper limit efficient above 30% under 1000 sun optically focused intensity, therefore use experiment to understand the experience that reaches from Computer Simulation and modeling analysis, and further performance improvement is possible.Although be easy to the operational analysis equation with good result to the modeling of a general sun concentrating solar battery; But the VMJ battery situation for the edge illumination that operates with high strength is really not so; Be because of under high strength, even second-order effects can have materially affect to battery operation efficient.Although in conjunction with solar cell graphic extension aspect of the present invention or characteristic; But can be (for example at other photovoltaic cell; The battery that hot photovoltaic cell or the laser source through photon excite) utilizes these aspects or characteristic and related advantages (for example, the reduction that combines loss again of photo-generated carrier) in.In addition, also can aspect of the present invention be implemented in other type power conversion battery (for example, beta voltaic cell).

The right physical property of the electronics that in the solar cell under the high strength, produces-electric hole charge carrier is quite complicated; Be to play a role because of many physical parameters; Include but not limited to: surperficial recombination velocity, mobility of carrier and concentration, emitter (for example, diffusion) reverse saturation current, minority carrier lifetime, band gap narrow down, in-building type electrostatic field and various binding mechanism again.Mobility reduces with increasing carrier density fast and lattice difficult to understand combine again with as carrier density cube intensity increase fast.For these aspects are incorporated into to the modeling of VMJ solar cell usefulness; Computer Simulation (for example, the two-dimensional digital computational analysis of photo-generated carrier transportation in the semiconductor) can provide with the high strength running or be used for the experience of physical parameter of vertical junction face element cell or the PV assembly of the operation under the high strength.But these simulations provide an analysis and design tool with the energy of understanding usefulness efficient and the usefulness that increases the VMJ battery under the high strength.Should be appreciated that; Even although be easy to use the simple analysis equation with good result to the modeling of a general sun concentrating solar battery; But the VMJ photovoltaic cell situation for the edge illumination that operates with high exposure intensity is really not so; Be because of under high strength, even second-order effects can have an influence strongly to battery operation efficient.

On physics, disclose in the VMJ element cell and issue the some given zone that combine loss again that the third contact of a total solar or lunar eclipse is given birth to charge carrier based on incorporating the calculating emulation of contact that the semiconductor array is arranged in high strength to the model of contact VMJ element cell.Some district at least in these districts presents the interdependent complicacy loss mechanism of intensity.Calculate emulation and disclose some districts that can combine the usefulness of loss and improvement VMJ battery in PV assembly or the VMJ element cell with reduction again through improvement.Aspect of the present invention provides these improvement.

Series resistance be regarded as general concentrator solar cell design problem one significantly the source.VMJ photovoltaic cell design proof is more than in this regard enough, even show that series resistance also is out of question under the intensity of 2500 sun optically focused.Yet, in some cases, can be advantageously increase the less simplicity of design property of exchange, with the efficient near the VMJ photovoltaic cell of 1000 sun optically focused runnings of improvement photovoltaic collector with one of series resistance.

Should be appreciated that; To under the higher-strength roughly (for example; The design of operation 2500 sun optically focused that the VMJ battery still can operate efficiently) can need roughly harsher and expensive collector system engineering design aspect optics, structure, solar tracking and thermal control, and can not any better whole effect of contribution or economic benefit.Therefore, the aspect of cited solar cell or characteristic and be used for being associated of its generation and make the efficient usefulness to be increased in the high-strength V MJ battery of running in 1000 sun optically focused or the higher scope among the present invention.The efficient increase can make the VMJ solar cell or other solar cell cost that utilize aspect of the present invention more efficient and feasible, even it is to a potential increase that can relate to extra manufacturing and series resistance greater than the intensity of 1000 sun optically focused.Aspect described herein or characteristic can provide the compromise so that photovoltaic collector system of using solar cell, VMJ battery or utilizing aspect of the present invention in addition of enough engineering design provide low $/watt usefulness the time more feasible and cost is more efficient.

The real parameter (minority-carrier lifetime, surperficial recombination velocity etc.) that use is handled greater than the good silicon under the intensity of 500 sun optically focused shows that to the microcomputer modelling analysis that general VMJ element cell designs (for example, having the P+NN+ sheet that connects face deeply) the following percentage of some given zone combines loss again:

● P+ diffusion 22.7%

● P+ contact 5.3%

● N+ diffusion 32.8%

● N+ contact 11.4%

Therefore; This analysis shows that its hard contact accounts in the element cell that surpass to form the VMJ solar cell all and combines half the heavy doping P+ and the N+ diffused emitter district that lose again, and an optimized diffusion N+ emitter can be different from a best diffusion P+ emitter (part is owing to ambulant difference) in design.Can be to N+PP+ element cell or the relative value that again combine loss of P+NN+ element cell (have shallow P+N and connect face) handover source in N+ and P+ district.In an aspect, the present invention is directed to the combination again that reduces in the aforementioned diffusion region and lose usefulness with improvement VMJ battery.

The open circuit voltage Voc=0.8 that connects face through each element cell under the high strength lies prostrate, and in general VMJ battery exploitation, is successfully reaching high minority-carrier lifetime and low surperficial recombination velocity.Voc confirms by electric current and diffused emitter reverse saturation current (Jo) that daylight produces, wherein is present in P+N and NN+ in the element cell of a VMJ solar cell and connects face both contribute for open circuit voltage.The best from a TV point meets the minimum Jo of face; Use Jo=1x10 ^-13Acm ^-2, it represents the low reverse saturation current of high-quality in the diffused junction, analyzes the diffusion depth that shows about 3 to 10 μ m and is used for P+ and both sufficient degree of depth of N+ diffusion, even when considering the unlimited recombination velocity at ohmic metal contacts place.

Should note; Even dark and progressive NN+ diffusion profiles will provide strengthening towards an in-building type electrostatic dispersion field (collecting to final) that the minority carrier that connects the face barrier moves and reducing the combination again in this district; But Computer Simulation exposure NN+ connects the face enhancing and under high strength, becomes more ineffective, and this can cause the higher combination again in the N+ as implied above district.

Experiment and calculate modeling and simulation has been discerned the main region that is used for improved potency for being the loss of combination again that reduces with the VMJ element cell of high strength running in heavy doping P+ and N+ diffusion and metal contact regions.Because a high quality oxide passivated surface can have the combination speed again and again (it significantly is lower than the recombination velocity at hard contact place) that is low to moderate a few cm/ second and consider that the drift field that is produced by diffusion profiles becomes more ineffective under high strength; Therefore aspect of the present invention provides metal contact area and the diffusion area that reduces through the patterned dielectric coating of PV assembly or VMJ element cell, with the usefulness of improvement VMJ solar cell.

With reference to graphic, Figure 19 A is illustrated between one and one hard contact 1925 in the surface of PV assembly has the icon 1900 once a photovoltaic assembly 1910 of patterned electricity dielectric coated 1920.Note, do not contact for surface, dielectric coating 1920 and the hard contact 1925 of PV assembly 1910 being illustrated as for the purpose of clear.Yet, in solar cell described herein, these surface contacts.With pattern dielectric coating 1920 be illustrated as be assembled in one-period array or lattice between disconnected oval district.PV assembly 1910 common N type semiconductor material piece, wherein person one of among this semi-conducting material Si, Ge, GaAs, InAs or other III-V semiconductive compound, II-VI semiconductive compound, CuGaSe, CuInSe, the CuInGaSe.This sheet can comprise once doping N+ diffusion region 1914 (being labeled as N+) comprising once doping P+ diffusion region 1916 (being labeled as P+) on the first surface of this sheet and be roughly parallel on the second surface of this first surface.Initiatively the thickness of PV assembly 1910 is born a N type (N) layer 1912 between diffusing, doping layer 1914 and 1916.Diffusion layer 1914 and 1916 thickness range can be from 3 μ m to 10 μ m, and make and confirm by being used for that charge carrier is introduced doping in the n type material sheet (for example, sheet 1912).Can realize the diffusing, doping layer is included through the roughly arbitrary doping way (for example, technology and dopant material) that is generally used for semiconductor processes.Dopant material can comprise phosphorus and boron respectively to N+ and P+ doping.For illustrative purposes, the interface between diffusion layer N+1914 and P+1916 and N type (N) layer 1912 is identified as obvious burst boundary; Yet these interfaces can be irregular, and are wherein neutral and between dopant material, have a Mixed Zone.The degree of mixing is stipulated by the mechanism or the mode that are used to produce through doped diffusion region at least.

Although be directed against an initial N type semiconductor material piece graphic extension aspect of the present invention or a characteristic as the predecessor of PV assembly 1910; But also can in the predecessor of an initial intrinsic (for example, nominally undoped) of PV assembly 1910, implement or realize these aspects or characteristic.In addition; In alternative or extra situation; Can adopt P type predecessor: PV assembly 1910 can a P type through the doped semiconductor materials sheet; It can a first surface of this sheet and near comprise P+ diffusion layer 1916, and can a second surface that is roughly parallel to this first surface and near comprise N+ dopant diffusion layer 1914, of preamble.

In an aspect of the present invention; Patterned dielectric coating 1920 reduces the formation at metal-diffusing, doping bed boundary (for example, metal and N+ layer 1914 interface)-in the patterned electricity dielectric coated when the metallization of active PV assembly 1910 open metal layer and diffusing, doping layer form a boundary zone.Combine loss again because these interfaces have height, thus the non-radiative loss that reduces to alleviate photo-generated carrier (for example, electronics and electric hole) of metal-diffusing, doping layer contact, the photovoltaic efficient of PV assembly 1910 with increase.In addition, being coated with a PV assembly (for example, 1910) through dielectric substance produces the passivation of surface state and therefore reduces the surface and combine loss again.Can or allow roughly arbitrary other technology (Wet-type etching for example) of the controlled patterning of a dielectric surface to realize the patterning of dielectric coating through photolithographic techniques.These photolithographic techniques are usually through to a plurality of coverages of dielectric substance in the dielectric coating and remove treatment step and provide pattern to form.Perhaps or in addition; Under the situation that exists the long-pending material in shelter Shen with a mask of stipulating a specific pattern; Can realize the patterning of dielectric coating through the long-pending technology in Shen (for example, as gas phase coatings such as chemical gaseous phase Shen long-pending (CVD) and version thereof, electric paste etching CVD (PECVD), molecular beam base brilliant (MBE) etc.).

Should be appreciated that dielectric coating 1920 can adopt the various plane geometric figures and the configuration that electrically contact that provides between N+ dopant diffusion layer 1914 and the hard contact 1925.Indicated like preamble, in exemplary icon 1920, dielectric coating 1920 adopts the one square-lattice configuration of oval discontiguous area.Also can form other lattice of dielectric region.These lattices can comprise triangular lattice, monoclinic lattice, center of area square lattice or like that.In the one patterned dielectric coating one or more part of dielectric substance substitute or additional configuration can comprise disconnected or coherent band between the dielectric substance.It should be noted that can be with place (for example, referring to Figure 19 B) between hard contact 1935 and the P+ diffusing, doping layer 1916 once patterned electricity dielectric coated (for example, coating 1920).Mixed by the neutrality that under the running radiation intensity, has the domination loss in a solar collector or other solar-electrical energy conversion equipment or the device and connect the face regulation in the position of patterned dielectric coating 1920.For example; At PV assembly 1910 (for example; One P+NN+ element cell) in; N+ diffusion region or layer and under high electromagnetic radiation intensity, have roughly higher loss with contacting of metal 1925, so the patterned dielectric coating 1920 in the configuration that is shown in the icon 1900 can be in order to reduce the roughly least expensive configuration of the usefulness (especially under high strength) that combines (for example, radiativity and non-radiation type) loss and improvement PV assembly 1910 again.

Should be appreciated that; Roughly arbitrary dielectric substance pattern (for example; One is interrupted the opening array; The space between the dielectric elliptical region in the dielectric coating 1920 for example) can reduce the loss of combination again that a single diffusion layer (for example, N+ layer 1914) is located, this be because of when the metallization that applies in the step after a while can be guaranteed next planar unit cells in being engaged to the VMJ battery structure fully all or roughly all opening contact areas connect mutually.The element cell that is used to produce a VMJ photovoltaic cell as described herein is by being coated with a dielectric pattern and constituting like the said metallized PV assembly 1910 of preamble.Therefore, this (etc.) element cell is different from the general cell battery that is used to make general VMJ solar cell.Notice that metal level is contributed with the increase that can be the series resistance in a PV assembly (for example, the 1910) storehouse that forms a solar cell than small area of contact between doped layer; Therefore, be used to reduce smaller opening that favourable pattern one a high density tight spacing of contact area ratio opens to be used for the usefulness of optimization one given intensity.Combine loss can comprise that the radiativity of photo-generated carrier or non-radiation type combine again again, wherein non-radiation type combines to comprise lattice scattering difficult to understand again, charge carrier-phonon is lax or like that.Lattice recombination rate difficult to understand with carrier density (for example, the density of photo-generated carrier) cube and increase; When taking into account lattice volume scattering difficult to understand, the volume of a photovoltaic device is doubled to cause combining loss to increase to 16 times again.Therefore; Thin sheet 1910 capable of using or make the thin roughly arbitrary Change In Design of PV assembly 1910 (for example; Surface (for example, V grooveization surface, U grooveization surface ...) or the light of dorsal part reflector of use through veining is caught) the body lattice difficult to understand that come the thickness of the element cell through reducing to form a VMJ photovoltaic cell to alleviate under the high strength combine again.When combining 50% reduction of loss again like the VMJ element cell burden according to aspect design described herein, the collection efficiency in the PV battery can significantly increase.

Should be appreciated that dielectric coating 1920 can adopt roughly arbitrary dielectric substance.In an aspect, dielectric coating can a thermal oxide layer, and it has a low surperficial recombination velocity.Should further understand; Realize with the based semiconductor that in dielectric, has patterned opening (for example; Based on Si) the electrically contacting of end of element cell or PV assembly of VMJ photovoltaic cell can need and can one electrically contact fully by what a low-resistivity silicon (its heat coupling or approximate match are in the thermal coefficient of expansion of these element cells) or a metal (for example, having molybdenum or the tungsten that is close to the thermal expansion coefficients that is matched with silicon) provided.Equally; For based on the semiconductor material of non-silicon or a VMJ solar cell of compound; Electric conducting material that can be through having the thermal coefficient of expansion that is close to the semi-conducting material be matched with the element cell that forms these VMJ solar cells (for example; Metal or low-resistivity are through doped semiconductor) carry out the metallization of patterned dielectric coating (for example, 1920 or 1960).

With respect to metal level, metal contact layer 1925 can be different entirely with metal contact layer 1935.For example, one first metal contact layer (for example, layer 1925) can comprise dopant, and one second contact layer (for example, layer 1935) can be incorporated into and a diffusion barrier arranged to alleviate automatic doping.

An icon 1950 that has a photovoltaic assembly 1910 of patterned dielectric coating in two diffusing, doping districts of Figure 19 B.In icon 1950; One first patterned dielectric coating 1920 is between a N+ diffusing, doping layer 1914 and one first hard contact 1925, and one second patterned dielectric coating 1960 is between a P+ diffusing, doping layer 1916 and one second hard contact 1935.The aspect of the aspect of dielectric coating 1960 and dielectric coating 1920 is roughly the same.As stated,

metal contact layer

1925 and 1935 can be different entirely.

It should be noted that through introduce photo-generated carrier that the second patterned dielectric coating provides combine again loss alleviate and with the PV components performance of increase surpass and the complexity of the increase of preparing the extra process action that one second patterned dielectric coating is associated and maybe extra charge.

For guaranteeing the high-efficient homework of PV assembly 1910 in the photovoltaic device, first pattern in the dielectric coating 1920 will be relevant with second pattern in the coating 1960, so that make one group of one or more opening of metal level 1925 and section relative.When patterned dielectric coating 1920 with respect to patterned dielectric coating 1960 " out-phase " and dielectric coating when covering the section of respective metal layers 1925 mutually, the resistance between the element cell in a PV assembly 1910 storehouses increases and the efficient of a VMJ solar cell reduces.

In addition or perhaps, see through the opening that pattern dielectric coating 1920 forms and to be different from the opening that produces through dielectric coating 1960, for example different area in size.For example, more need have the N+ contact openings area wideer than the aperture area of the P+ contact in PV assembly 1910 or the P+NN+ element cell, more effectively to reduce total losses, especially in the N+ diffusion region and the hard contact place exist under the situation of higher loss.As stated, Quan can implement or utilize between the openings of sizes this kind opposite sex and no matter the specific pattern of dielectric coating how.

Figure 19 C shows the icon according to the exemplary set predecessor of aspect described herein and the PV assembly of deriving that can produce through mixing.Indicated like preamble; It is as described herein treated to introduce the PV assembly of patterned dielectric coating and hard contact to adopt three kinds of predecessor types to produce: (i) the N type is through doping predecessor 1980; (ii) the P type reaches (iii) intrinsic predecessor 1990 through doping predecessor 1985.Predecessor semiconductive material, for example Si, Ge, GaAs, InAs or other III-V semiconductive compound; II-VI semiconductive compound, CuGaSe, CuInSe, CuInGaSe.When mixing, N type predecessor 1980 can cause comprising the PV assembly 1982 of a N+ type diffusing, doping district and a P+ type doped region, this kind PV assembly PV assembly 1910.In addition, the doping of predecessor 1980 can cause PV assembly 1984, its middle level or district's N type and P type diffusing, doping.Predecessor 1985 is realized the formation of PV assemblies 1986 and 1988, and wherein N+ and P+ diffusing, doping layer are in PV assembly 1986, and N+ diffusing, doping and P type are entrained in the assembly 1988.The various doping of intrinsic predecessor 1990 produce PV assembly 1992-1998.In PV assembly 1992, comprise P type and N type doped region; PV assembly 1994 comprises N+ type and P type doped layer; PV assembly 1996 comprises N type and P+ type doped layer; And N+ type and P+ type layer are included in the PV assembly 1998.Although the different doped regions that will in precursor material 1980,1985 and 1990, introduce are illustrated as extension area, can spatially be limited to or distinguished near being limited to these, as described herein.But can through the illustrated various PV assemblies of patterned dielectric substance coating this paper and as described herein with its metallization to form storehouse to produce element cell according to a monomer photovoltaic cell of aspect of the present invention.In an aspect, can be used for land PV collector through the patterned contact that forms with the coating of patterned dielectric substance in P+NN+PV assembly or the element cell, thereby and P+PN+PV assembly or the radiation-curable reinforcing of element cell and be used for space and use.

Figure 20 A has the diagram 2000 through a section of a PV assembly on a single surface of a dielectric coating patterning.Pattern of dielectric material produces Shen and amasss in the dielectric sections 2005 at a N+ diffusing, doping layer 2014 top.It should be noted that and have extra or alternative configuration is possible once a PV assembly of patterned electricity dielectric coated on the P+ diffusing, doping layer 2016.In icon 2000 in the illustrated PV assembly, a N type district 2012 separates diffusing, doping district 2014 with 2016.As stated, this kind configuration alleviate with high strength under the loss of combination again that is associated of the operation of PV assembly aspect be effective.

Figure 20 B is illustrated in the PV assembly through the icon 2030 after

hard contact

2025 and 2035 metallization.The existence in patterned dielectric coating district 2005 reduces the electric coupling between the

electric contact

2025 and 2035 on the N+ diffusion layer 2014.As stated, metal contact layer can be different entirely.

Figure 20 C graphic extension wherein utilizes an one-sided asymmetric patterned dielectric coating _ for example along formation element cell 20701-2070M_M one positive integer of direction 2080 storehouses on N+ diffusing, doping layer, an exemplary embodiment of the VMJ photovoltaic cell 2060 through dielectric region 2005 coatings.Because of element cell 2070 λ _ λ=1 as the PV assembly, the structure of the storehouse of 2...M and VMJ solar cell one monomer that produces _ for example, integrally engage, axial orientation.In an aspect,, can form two types of similar reaching _ b foreign peoples of VMJ photovoltaic cell: _ a based on the semiconductive material of element cell.In _ a, element cell 20701-2070M is based on identical or roughly the same predecessor, and in _ b, element cell is based on complete different predecessor.Complete different predecessor can be based on identical semiconductive compound; For example Si, Ge, GaAs, InAs or other III-V semiconductive compound, II-VI semiconductive compound, CuGaSe, CuInSe, CuInGaSe; But it is different on doping type, or different on fusion concentration for the compound of fusion.The various piece of the emission spectrum of a similar VMJ photovoltaic cell electromagnetic radiation source capable of using, for example solar spectrum.One VMJ solar cell can produce a series connection voltage along direction 2080, and wherein Δ VC one constitutes the voltage of PV assembly 2070 λ.In an aspect, M～40 are generally used for forming a VMJ solar cell.1cm2VMJ with M～40 is in typical operation condition _ for example, incident photon flux, radiation wavelength, temperature or like that exportable near 25 volts down.Should be appreciated that the usefulness of a PV assembly storehouse is had the PV component limitations of minimum usefulness, this is so plants the electric current output bottleneck of assembly in being connected in series; That is, electric current output is reduced to the electric current output of the poorest element cell of performance.Therefore; Be optimization usefulness; Be based under the condition that the usefulness of expecting under the normal operation condition that roughly is similar to a solar energy collector system in this field characterizes _ for example; The usefulness that radiation wavelength, aggregation intensity carry out in a test envelope characterizes, but the storehouse currents match of the active PV assembly of formation VMJ photovoltaic cell or element cell or intimate currents match.The electric current that the electric current of coupling is produced when solar-electrical energy is changed by a PV assembly or element cell.

In addition; (for example can handle; Sawing, cutting, etching, peel off or like that) produce the monomer storehouse of the PV assembly 20701-2070M of VMJ solar cell; So that when the part of this VMJ solar cell one PV module or device, one specific crystalline plane (qrs) exposed to the open air or near exposing to the open air to daylight, wherein q, r, s Miller indices, its integer.In an aspect, for reaching the essence passivation of surface state, specific crystalline plane can (100) plane.The VMJ PV battery 2090 that the 20D graphic extension produces through a PV assembly or element cell storehouse 2092 (the patterned contact with the style that is appeared among Figure 20 C), this VMJ PV battery is treated to expose a specific crystal surface (qrs) (through a normal vector 2094 indications directed on direction < qrs >) to the open air.Notice that any PV assembly with patterned contact as herein described capable of using forms a VMJ PV battery that exposes crystalline plane (qrs) to the open air.In addition, as the part of this processing, and based on direction < qrs >, the part 2096 of removable this VMJ PV battery is to produce a flat surfaces to promote or to realize that this VMJ PV battery is used for a PV device or a module.

One icon of the exemplary dielectric coating pattern of Figure 21 A graphic extension to PV assembly.Pattern 2130 and 2140 is corresponding to first and second surperficial pattern in the PV assembly.Opening in this dielectric coating is line or band, and it has once defining width w 2135 and having intervals wP 2145 each other.In an aspect, this kind hatch frame in the pattern dielectric coating provides one of contact area to reduce (1+w/wP)-1; For example, when w=wP, there be one 50% reduce in contact area.Yet,, therefore be used to reduce the preferable line of contact area ratio or less line or the strip openings that the highdensity tight spacing of strip pattern is opened owing to an increase that can be series resistance than small area of contact is contributed.Can change the usefulness of this density with optimization one given radiation intensity (its this PV assembly of expection is as the part of a solar cell or PV battery in the PV module radiation intensity with its running).Extra or alternative pattern on the apparent surface of one a PV assembly 1910 or a wafer is possibility and favourable also.As illustrated, can on the opposite side of each a PV assembly 1910 or a wafer, make line or strip openings and miss directed 90 degree from a side direction opposite side; That is, the band in the patterned dielectric coating 2130 is directed with an angle 1935 degree with respect to < 100>direction, and the band in the patterned dielectric coating 2140 is aimed at the miter angle degree with respect to < 100 >.Notice that other relative mistake orientation also possibly reach favourable.In addition, indicated like preceding text, the opening that sees through patterned dielectric coating 2130 formation can be different from the opening that produces through dielectric coating 2140 in size, for example crosses over a different area.For example; Usually more need have than have the wide N+ contact openings area of aperture area of the P+ contact in the PV assembly of P+NN+ element cell; More effectively to reduce total losses, especially in the N+ diffusion region and the hard contact place exist under the situation of higher loss.In replacement scheme, possibly need to implement the P+ contact openings area wideer and lose with the combination again that alleviates in the N+PP+ element cell (for example, the PV assembly 1986) than the aperture area of N+ contact.

When making vertical multi-junction solar cells (the PV assembly that it comprises storehouse and fuses patterned surface as herein described), when being bonded together with metallization, directed by different way dielectric area can define at one and form the low resistance contact in the pattern.In an aspect; These contacts (promoting through the opening in dielectric coating 2130 and 2140) are directly aimed at and in a controlled pattern, are adjoined mutually; The P+ contact of one of them wafer is situated between in the N+ contact of some some places and next wafer and connects, to keep the series resistance in the finished product VMJ battery lower.Of preamble, in an aspect, the VMJ battery of sawing made is so that it has one preferable < 100>crystal orientation to set up the minimum surface state of passivation in irradiated surface.Therefore; As illustrated among Figure 21 A; The line on one first surface of one patterned PV assembly or the relative orientation of band can be apart from an angle γ of line in the second surface or band (for example; 90 degree) mistake is directed relatively, and wherein this first and second surface comprises this < 100>crystallization direction, and for example normal direction is in this (100) crystalline plane.Other orientation of line or band also possibly reach favourable.Equally, can implement the directed γ of relative mistake of different surfaces place line or band.In an aspect, the directed γ one limited real number of mistake; For example, the dielectric coating pattern is not aligned with each other in complete different surface.In addition, owing to can handle VMJ photovoltaic cell as herein described, therefore can come the band in the directed dielectric coating with respect to an angle a of crystallization direction < qrs>(wherein q, r and s Miller indices) to expose or roughly to expose to the open air arbitrary crystalline plane (qrs) to the open air.Specific; Band on one first surface in the patterned electricity dielectric coated can comprise with the band directed with respect to one first angle [alpha] of < qrs >, and the band in the patterned electricity dielectric coated can be with respect to the one second angle p of < the qrs>(orientation of α ≠ β) in the second surface; Thereby provide a mistake directed γ=alpha-beta.

Figure 21 B graphic extension one P+ diffusing, doping layer 2176 and a N+ diffusing, doping layer 2174 both long-pending profile that a PV assembly 2150 of dielectric coating pattern is arranged in last Shen.In PV assembly 2150, N type district 2172 separates diffusing, doping district 2014 with 2016.Illustrated profile illustration is explained a cross section of the aligning of they's dielectric region (for example, dielectric region 2165) on a dielectric region on the first surface (for example, dielectric region 2155) and the second surface.Should be appreciated that other section interface can show the misalignment district of dielectric substance (this first surface and second surface).As stated; This kind aim to promote to keep the series resistance between the PV assembly 2150 when forming a VMJ solar cell through storehouse; This is because of the hard contact in the P+ diffusing, doping layer can be matched with the hard contact in the N+ diffusing, doping layer of a follow-up storehouse, as illustrated among Figure 21 C.Should be appreciated that indicated like preceding text, the spacing between the dielectric region 2155 can be different from the spacing between the dielectric region 2165.

Figure 22 graphic extension has a profile of an exemplary PV assembly 2200 in dielectric coating district 2205; The Shen of dielectric coating district 2205 through patterned dielectric coating 2202 is long-pending to produce, its promotion or can when the metallization of this PV assembly, reduce in the metal contact area in the surface of this PV assembly at least one.In PV assembly 2200, thereby N+ diffusion region 2214 is through the again combination loss of structure to reduce the doped layer volume and to alleviate photo-generated carrier.Can confirm the N+ doped region through the hatch frame in the patterned dielectric coating; For example, N+ diffusion region 2214 can be along the directed band of the spacing in the striping pattern of dielectric coating 2202.Form these districts through utilizing dielectric coating district 2205 to mix with control or manipulation N+ as a mask.At least in part based on the topology in patterned dielectric coating 2202 and institute Shen Ji district 2205, can limit to fully or accurate limitation N+ diffusing, doping zone or volume 2214, for example at two or still less limited on the direction and extend upward a third party.In a characteristic of PV assembly 2200, n type material district 2212 is scattered with N+ diffusing, doping district 2214.In addition, P+ diffusing, doping district 2216 is not coated with once the patterned electricity dielectric material.

When metallization (for example; Surface through hard contact coating P+ diffusion layer 2216 and receive limitation, (for example be interrupted N+ diffusing, doping district; Distinguish 2214 groups) patterned surface); But storehouse and processing (for example, through a soft soldering of high temperature manufacturing step or a fusion) one group of metallized PV assembly have the VMJ photovoltaic cell that combines loss again according to the reduction of aspect described herein with formation.Must notice that this metal level is an eutectic structure with the alloy structure of the metal alloy layer that forms after via heat treatment, this measure will be strengthened the effect of sticking together between the interface.

The long-pending profile that a PV assembly 2300 of dielectric coating pattern is arranged in Shen on Figure 23 A graphic extension relative diffusion doped region.In an aspect; (for example utilize one first dielectric coating pattern; Along the directed striping pattern 2330 of a direction with respect to < 100>crystallization direction ROT13 5 degree) reduce the Metal Contact surface at place, one first diffusing, doping district; And one second dielectric coating pattern (for example, with respect to the directed striping pattern 2340 of these < 100>crystallization direction 45 degree).Both can be included in the doped region 2314 and 2316 that is limited on two or more directions respectively N+ and P+ diffusing, doping district.Opening in these dielectric coating patterns can be used as mask to produce the dopant diffusion layer that volume reduces; These openings are forming between coating dielectric district 2305 and 2325.The reducing of two Metal Contact surfaces, diffusing, doping layer place and doped region volume can provide the charge carrier of the enhancing that reduces with respect to dielectric coating and doping volume in the single doped region to combine loss to alleviate again.As stated, the benefit through improvement PV usefulness of a VMJ who produces through patterned PV assembly or element cell surpasses extra process complexity and the cost that is associated with patterned surface.In addition, the opening that sees through 2330 formation of pattern dielectric coating can be different from the opening that produces through dielectric coating 2340 in size, for example crosses over a different area, so that the further combination again of Controlling Source self-diffusion doped region loss.For example, possibly more need have than produce the opening of the big generation N+ doped region of the opening of P+ doped region, more effectively to reduce total losses, especially in this N+ diffusion region and hard contact place when having higher loss.

Figure 23 B graphic extension has as stated can mutually different metal contact layer 2365 and a section of 2375 patterned PV assembly 2350.Illustrated section cross section shows the lip-deep metal area 2365 (for example, in the space of dielectric substance) of N+ diffusing, doping layer and lip-deep metal area 2375 (for example, the district in the space of the dielectric substance) aligning of P+ diffusing, doping layer.In PV assembly 2350, in a N type predecessor, form doped region.But storehouse is also handled one group of patterned PV assembly 2350 and is had the solar cell through the VMJ of improved potency with formation.

Figure 24 appears and has the perspective view that a veining that texturizing surfaces and these element cells of the direction storehouse through the plane along normal direction in element cell 24101-241010 form vertically connects an exemplary embodiment of face (VMJ) photovoltaic cell 2405 more; Each element cell 2410 κ (κ=1,2 wherein ... 10) constitute by a PV assembly that has once patterned electricity dielectric coated and hard contact, as described herein.Although one group of 10 element cell of graphic extension in exemplary veining PV battery 2405 notice that veining VMJ photovoltaic cell can comprise M element cell, wherein M one positive integer.Can the element cell in the texture VMJ photovoltaic cell (for example, 2410 κ) be embodied in element cell 2070 λ, 2180 λ, or 2350, or in any other element cell of production as described herein.In photovoltaic cell 2405, texturizing surfaces 2,412 one V grooveizations surface; Yet, can form the groove or the chamber of other different shape, for example the U groove.This texturizing surfaces is formed up to because of processing has the element cell of patterned metal as herein described contact or the monomer storehouse of PV assembly exposes to the open air or roughly exposes to the open air on the plane (qrs) to electromagnetic radiation; For example, referring to Figure 20 D.Incident light can reflect in the plane with a normal vector n 2,432 2430.The 2430 parallel surfaces that are coated with element cell 2410 κ of patterned dielectric substance on it, this kind plane, and can comprise that the section configuration-plane 2430 of groove 2415 is approximately perpendicular to the direction of stack cell battery 2410 κ.The veining on the surface of the monomer storehouse of element cell 2410 κ (it causes texturizing surfaces 2412) makes refract light can be directed leaving P+ and N+ diffusing, doping district and does not hinder the photoproduction of charge carrier; Thereby the element cell that will form veining photovoltaic cell 2405 is effectively made thinlyyer, and indicated reduction combines loss again like preamble.In addition, can an ARC be applied to texturizing surfaces 2410 absorbs with the incident light that increases in this battery.

In view of above-mentioned example system and assembly, can more preferably understand with reference to the flow chart among Figure 25 to Figure 28 can be according to the exemplary methods of the subject matter enforcement that is disclosed.From the purpose of the simplicity of explaining, the said method that this paper is cited appears and is illustrated as row moves; Yet, should understand and understand, the restriction that the subject matter of being advocated does not receive running order of addressing, be because of some action can be with shown in this paper and the different order of described order and/or take place simultaneously with other action.For example, should understanding and understand, can be row be mutually related a state or an incident (for example, in a Status icons or interactive icon) with a method replacing representation as herein described.In addition, enforcement is according to not all illustrated actions of needs of exemplary methods of this specification.In addition, but Joint Implementation exemplary methods described herein to realize one or more characteristics or advantage.

Figure 25 is used to produce a flow chart of an exemplary methods 2500 of the VMJ solar cell that the charge carrier with reduction combines to lose again according to aspect disclosed herein.This exemplary methods is not limited to solar cell and it also can be through carrying out to produce arbitrary or roughly arbitrary photovoltaic cell.Practicable exemplary methods 2500 of one or more assembly as herein described or module.At action 2510 places, through the one group patterned surface of a dielectric coating with a photovoltaic assembly (for example, the PV assembly 1910).This PV assembly patterning is comprised one or more the arbitrary appropriate technology that utilize to produce in the said dielectric coating of preamble through dielectric coating.As an instance, patterning can carry out through the long-pending photolithographic techniques that reaches in Shen.As another instance, also can adopt etching technique to come the complementary or additional patterning agreement that is adopted.Can adopt roughly arbitrary or arbitrary dielectric substance to be coated with this group surface.At action 2520 places, on long-pending to the patterned surface of this PV assembly one or more in a hard contact Shen.Action 2530 substitute or extra realization can comprise on long-pending to the patterned surface of this PV assembly one or more in an ohm contact or conductive contact Shen.Can the material that be used for this hard contact or ohm contact be embodied in roughly arbitrary or arbitrary electric conducting material, for example a low-resistivity is through a doped semiconductor or a metal.In an aspect, this electric conducting material is preferable to have the thermal coefficient of expansion that is close to the semi-conducting material that is matched with this PV assembly.In another aspect, this electric conducting material has the engagement characteristics of the storehouse that promotes patterned and metallized PV assembly.In an aspect again; The pattern of dielectric substance coating is through aiming at complete different lip-deep metal area (for example; The directed by mistake striping opening of in the pattern 2330 and 2340 90 degree produces the Metal Contact district of aiming at along a storehouse direction (for example, the z direction 2080)) guarantee that apparent surface's metallization generation has low-resistance district.At action 2530 places, one group of patterned, metallized photovoltaic assembly of storehouse is to form a VMJ solar cell.Should be appreciated that these PV assemblies can comprise the diffusing, doping district of being limited to as stated.At action 2540 places, handle formed VMJ solar cell to promote deployment, optimization photovoltaic usefulness or the one of which combination in the PV device.This kind processing can comprise various manufacturing steps or program, for example cutting process, polishing program, cleaning procedure, integrated process and like that.This supervisor can be at least partly to when being deployed in formed VMJ solar cell in the one PV device, a specific crystalline plane being exposed to the open air to daylight.In an example, processing comprises the formed VMJ battery of cutting so that < 100>crystalline plane is exposed to the open air or roughly exposes to the open air to daylight to set up the minimum surface state of passivation.

Figure 26 is used to produce a flow chart of an exemplary methods 2600 of the vertical multi-junction solar cells that the charge carrier with reduction combines to lose again according to aspect disclosed herein.This exemplary methods 2600 is not limited to make solar cell; Exemplary methods 2600 also can be through carrying out to produce arbitrary or roughly arbitrary photovoltaic cell.Practicable exemplary methods 2600 of one or more assembly as herein described or module.

At action 2610 places; Coating one dielectric coating makes its patterned surface on a photovoltaic (PV) assembly; Limited to the diffusing, doping district to produce in this photovoltaic assembly, wherein this photovoltaic assembly comprises at least one in a P type diffusing, doping district or the N type diffusing, doping district; This PV assembly patterning is comprised one or more the arbitrary appropriate technology that utilize to produce in the said dielectric coating of preamble through dielectric coating.As an instance, patterning can carry out through the long-pending photolithographic techniques that reaches in Shen.As another instance, also can adopt etching technique to come the complementary or additional patterning agreement that is adopted.Can adopt roughly arbitrary or arbitrary dielectric substance to be coated with this group surface.Dielectric coating that can this is patterned is as a mask of the limitation degree of regulation doped region.In an aspect, the limitation of these doped regions can be near two dimension, and wherein this doping is roughly limited to along a dimension extension and along two complete different directions.The limitation of doped region also can be near three-dimensional, wherein the doping in this PV assembly be limited to one group one or more roughly less than the localized areas (for example, referring to Figure 22) of the size of this PV assembly.As an instance; One striping dielectric substance pattern (for example; Pattern 2330) can cause when acting on a mask of doping roughly on both direction (for example, nominally between the dispersal direction at a center of a undoped semiconductor material slices and normal direction are in this patterned coating apart from or the direction of band) the diffusing, doping layer that limited to.The receiving limitation district to reduce its volume and alleviate photo-generated carrier of diffusing, doping district combines loss again.

At action 2620 places, this photovoltaic assembly that metallizes, it deposits in an ohm contact to the patterned surface of this photovoltaic assembly one or more; Can the material that be used for this ohm contact be embodied in roughly arbitrary or arbitrary electric conducting material, for example a low-resistivity is through a doped semiconductor or a metal.In an aspect; This electric conducting material is close to the thermal coefficient of expansion of the semi-conducting material (for example, Si, Ge, GaAs, InAs or other III-V semiconductive compound, II-VI semiconductive compound, CuGaSe, CuInSe, CuInGaSe...) that is matched with this PV assembly and is suitable for fusion.Indicated like preamble; The pattern of dielectric substance coating is through aiming at complete different lip-deep metallized area (for example; The striping opening of the degree of 90 in the pattern 2330 and 2340 mistake orientation produces the Metal Contact district of aiming at along a storehouse direction (for example, the z direction 2080)) guarantee that long-pending generation the in Shen on an ohm contact to the relative patterned surface has low-resistance district.This ohm contact is that a vacuum coating mode is made, and this vacuum coating mode can be selected from sputtering method, hot vapour deposition method, electron beam evaporation plating method, the long-pending method of electricity slurry coating method and chemical gaseous phase Shen is formed any making making in the group.Through this ohm contact of this vacuum coating mode making, required mechanical engagement intensity of this multi-junction solar cells and uniform current density can be provided.This ohm contact is formed by the electric conducting material of low-resistance value; The material structure of this ohm contact is an eutectic structure in the preferred embodiment, and it can comprise one of silicon (Si), titanium (Ti), cobalt metal (Co), tungsten metal (W), platinum (Pt), hafnium metal (Hf), tantalum metal (Ta), molybdenum (Mo), chromium metal (Cr) or palladium metal (Pd), metal (Au), silver metal (Ag), copper metal (Cu), aluminum metal (Al) and alloy thereof; The thermal expansion coefficient difference of the semi-conducting material of the material thermal expansion coefficient of this ohm contact and this PV assembly is less than 5%.Just, if the material thermal expansion coefficient of this ohm contact is X, and the thermal expansion coefficients Y of this semiconductor substrate, then the absolute value of (X-Y) divided by Y less than 5%.Adopting aluminum metal in embodiment is the material of this ohm contact.The material thickness of this ohm contact between 20 how rice to 5000 how between the rice.Wherein preferable, the material thickness of this ohm contact between 100 how rice to 5000 how between the rice.The material of this above-mentioned ohm contact also can be the combination of alloy; Be preferably an alusil alloy; Be preferable wherein, utilize aluminium under different plating rates, to form this ohm contact for vapor deposition source with silicon with evaporation coating method, the aluminium optimum content be alusil alloy 60% to 90% between.

At action 2630 places, one group of patterned, metallized this photovoltaic assembly of storehouse is to form a solar cell.This group photovoltaic assembly that forms this solar cell is crossed over M assembly, and wherein M is at least in part by the definite natural number of a target job voltage of this solar cell.In an aspect, this group PV assembly can similar or foreign peoples.In a homogeneous groups, each assembly in this group or element cell are based on identical or roughly the same predecessor, and in foreign peoples group, each assembly is based on complete different predecessor.Complete different predecessor can be based on identical semiconductive compound; For example Si, Ge, GaAs, InAs or other III-V semiconductive compound, II-VI semiconductive compound, CuGaSe, CuInSe, CuInGaSe; But it is different on doping type, or different on fusion concentration for the compound of fusion.In addition, these patterned, metallized PV assemblies comprise the diffusing, doping district of being limited to as stated.

At 2640 places, be deployed as optimization PV usefulness in what a processing procedure made this solar cell.

Be deployed as optimization PV usefulness in what a processing procedure made this solar cell.This processing procedure comprises heat treatment process, cutting process, polishing program, cleaning procedure, integrated process or like that.The heat treatment temperature of this heat treatment process is between 400 to 800 degree.This cutting process can at least partly be intended to when formed solar cell being deployed in the PV device, a specific crystalline plane exposed to the open air to daylight.In an example, this cutting process makes this solar cell < 100>crystalline plane expose to the open air or roughly expose to the open air to daylight to set up the minimum surface state of passivation.。Should be appreciated that, can handle this solar cell to expose or roughly to expose to the open air other crystalline plane to the open air, for example (qrs) plane (for example, (311)).

Figure 27 is according to a calcspar of an example system 2700 of the making of aspect realization solar cell described herein.The long-pending reactor 2710 in Shen realizes the processing of the wafer of based semiconductor is formed with generation the PV assembly or the element cell of solar cell as described herein (for example, VMJ solar cell).Long-pending reactor 2710 in Shen and module wherein comprise that various nextport hardware component NextPorts, component software or its combination and associated electrical or electronic circuit are to realize this processing.In aspect, spreader module 2712 allows through the patterned surface of a dielectric coating with semiconductor wafer or substrate.Nominally this wafer or substrate can undoped or through mixing, and be used to produce the predecessor of the PV assembly of these solar cells.Indicated like preceding text, patterning can be based on amassing this dielectric substance via an appropriate mask, light lithography or etching Shen.The long-pending reactor 2710 in Shen also comprises that permission is included in dopant the doping module 2714 in the semiconductor predecessor of PV assembly.Dopant can formation diffusing, doping layer as indicated above (for example, referring to Figure 19 or Figure 23); Yet doping module 2714 is also born the roughly doping of arbitrary type, for example based on building brilliant doping (for example, Δ mixes).In addition, doping module 2714 allows to form and can prevent the diffusion barrier of doping automatically.

As stated, being coated with a PV assembly through a dielectric substance can take place before or after mixing.Doping after patterned dielectric coating utilizes this kind coating to be limited to or the approaching doped region (for example, referring to Figure 22) that is limited to be used to produce as a mask.

Metallization module 2716 realizes that metal levels are long-pending to the Shen of a PV assembly that comprises doped region (extend or limited to) and patterned dielectric coating.Can amass through the Shen of a semi-conducting material (through follow-up doping) or a metal material and realize metallization.In an aspect, these materials have and are matched with or are close to the thermal coefficient of expansion be matched with the PV assembly with doped region.

The long-pending reactor 2710 in Shen can comprise sputtering chamber, builds brilliant chamber, long-pending chamber, gas phase Shen, electron beam gun, source material clamper, wafer holder, sample substrate, stove, vacuum pumps (for example, turbine group Pu, diffusion group Pu) or like that.In addition, the long-pending reactor 2710 in Shen can comprise: comprising the computer of processor and internal memory, and internal memory volatility or non-volatile wherein; The programmable logic controller; Application specific processor, for example special chip collection; Or it is like that.The long-pending reactor 2710 in Shen for example also can comprise software application such as operating system or in order to carry out one or more processing actions code instructions of (comprising the said they's action of preamble at least).Said hardware, software or its combination promote or realize the long-pending reactor 2710 in Shen and wherein at least a portion of module is functional.The transmission of information (for example, data or code instructions), the transfer of material, the exchange of treated assembly etc. between various hardware, software or its combination in the long-pending reactor 2710 in one bus, 2718 permission Shen.

Can be to a package platforms 2730 supply light voltaic assemblies to be used for further processing.One exchange link (for example, conveyer's link) or wherein a switch room and dynamo-electric assembly can supply this (etc.) the PV assembly; This exchanges in link or the switch room at least one through arrow 2720 graphic extensions.Knockdown block 2732 can collect one group of PV assembly and allow through a high temperature make or these PV assemblies of step storehouse in each to produce a solar cell (for example, a VMJ solar cell).This storehouse is transferred to the specification module 2734 with this solar cell completion to definite specification, and for example, this storehouse of sawing is to allow to expose to the open air a specific crystalline plane that forms the PV assembly of this solar cell in this storehouse.Can promote or allow this kind processing, test module 2760 can confirm that the crystallography of these PV assemblies in this solar cell or element cell is directed at least in part through test module 2760; Can confirm that this kind is definite via the X-ray spectroscopy, for example difraction spectrum and swing curve spectrum.

The purpose of guaranteeing from quality or for satisfying specification, each stage precursor material or the treated material of test module 2760 detectable solar cells manufacturings.As an instance, the density of the opening in the patterned electricity dielectric coated of test module 2760 detectable PV assemblies is to confirm whether this kind density is enough for an expection day luminous intensity or photon flux in a solar collector.Whether as another instance, test module can be confirmed the detecting density that can produce because of the thermal cycle in the PV assembly with metal level, be used for metallized material or make enough confirming.At least from these purposes, test module 2760 can be implemented or realize minority-carrier lifetime measurement, X-ray spectroscopy, scanning electron microscopy, wears the tunnel electron microscopy, scan and wear tunnel microscopy, electron energy loss spectroscopy or like that.But detection original position or ex situ by test module 2760 enforcements.Can be supplied to test module via exchange link 2740 and 2750 samples with the predecessor of treated material or device (for example, solar cell).

The practicable logic of processing unit (not shown) is with the part at least of the various making of the operation elaboration of control this paper coupling system 2700.This (etc.) the processing unit (not shown) can comprise the processor of code instructions that carry out to carry out this control logic; Can with these code instructions (for example, program module or software application) be stored in functionally be coupled to this (etc.) in the internal memory (not shown) of processor.

Content mentioned above comprises the instance of the system and method that advantage of the present invention is provided.Certainly, each combination that can conceive that can not set forth each assembly or method from setting forth the object of the invention, but those who familiarize themselves with the technology can recognize that the subject matter of being advocated can have many other combinations and arrangement.In addition; With regard to used term in this detailed description, claim, annex and the accompanying drawing " comprise (includes) ", " having (has) ", " having (possesses) " and like that with regard to, the mode that comprises of these terms is set to be similar to term " comprising (the comprising) " that kind explained that " comprises (comprising) " when in protection range, being used as an adversative.

Claims

1. the manufacture method of a vertical multi-junction solar cells is characterized in that, comprises:

(a) coating one dielectric coating makes its patterned surface on a photovoltaic assembly, is limited to the diffusing, doping district to produce in this photovoltaic assembly, and wherein this photovoltaic assembly comprises at least one in a P type diffusing, doping district or the N type diffusing, doping district;

(b) this photovoltaic assembly that metallizes, it deposits in an ohm contact to the patterned surface of this photovoltaic assembly one or more;

(c) one group of patterned, metallized this photovoltaic assembly of storehouse is to form a solar cell; And

(d) be deployed as PV usefulness in what a processing procedure made this solar cell.

2. manufacture method according to claim 1 is characterized in that, this processing procedure comprises heat treatment process, cutting process, polishing program, cleaning procedure, integrated process.

3. manufacture method according to claim 2 is characterized in that, the heat treatment temperature of this heat treatment process is between 400 ℃ to 800 ℃.

4. manufacture method according to claim 1 is characterized in that, the thermal expansion coefficient difference of the material coefficient of thermal expansion coefficient of this ohm contact and the semi-conducting material of this photovoltaic assembly is less than 5%.

5. manufacture method according to claim 1; It is characterized in that the material of this ohm contact is selected from one of silicon, titanium, cobalt metal, tungsten metal, platinum, hafnium metal, tantalum metal, molybdenum, chromium metal, palladium metal, metal, silver metal, copper metal, aluminum metal and alloy thereof.

6. manufacture method according to claim 1 is characterized in that, the material structure of this ohm contact is an eutectic structure.

7. manufacture method according to claim 1 is characterized in that, the material of this ohm contact is an alusil alloy.

8. manufacture method according to claim 7 is characterized in that, the aluminium content of this alusil alloy between this alusil alloy 60% to 90% between.

9. manufacture method according to claim 1 is characterized in that, the material thickness of this ohm contact between 100 how rice to 5000 how between the rice.

10. manufacture method according to claim 2 is characterized in that, this cutting process exposes the crystalline plane of this solar cell to the open air or roughly exposes to the open air to daylight to set up the minimum surface state of passivation.