CN103334089A - Preparation method of InN (indium nitride) thin film through low-temperature deposition on self-supporting diamond thick film by ECR-PEMOCVD (electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition) - Google Patents
Preparation method of InN (indium nitride) thin film through low-temperature deposition on self-supporting diamond thick film by ECR-PEMOCVD (electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition) Download PDFInfo
- Publication number
- CN103334089A CN103334089A CN2013102989837A CN201310298983A CN103334089A CN 103334089 A CN103334089 A CN 103334089A CN 2013102989837 A CN2013102989837 A CN 2013102989837A CN 201310298983 A CN201310298983 A CN 201310298983A CN 103334089 A CN103334089 A CN 103334089A
- Authority
- CN
- China
- Prior art keywords
- self
- film
- thick film
- pemocvd
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention belongs to the technical field of novel photoelectric material deposition preparation, and provides a preparation method of an InN thin film through low-temperature deposition on a self-supporting diamond thick film by the ECR-PEMOCVD, and by means of the preparation method , the InN photoelectric thin film with good electrical properties and heat dissipation performance can be prepared. The preparation method comprises the steps as follows: 1), a self-supporting diamond thick film substrate is ultrasonically cleaned by acetone, ethanol and deionized water in sequence, blow-dried by nitrogen and sent to a reaction chamber; and 2), the ECR-PEMOCVD system is adopted to vacuumize the reaction chamber, the substrate is heated in a range from 20 DEG C to 600 DEG C, then trimethylindium carried by hydrogen and nitrogen are introduced into the reaction chamber, a flow ratio of trimethylindium to nitrogen is (1-2):(100-200), total gas pressure intensity is controlled in a range from 0.8 Pa to 2.0 Pa, electron cyclotron resonance reaction is performed for 30 min-3 h, and the InN photoelectric thin film on the self-supporting diamond thick film substrate is obtained.
Description
Technical field
The invention belongs to novel photoelectric material deposition preparing technical field, relate in particular to the preparation method of a kind of ECR-PEMOCVD low temperature depositing InN film on the self-supporting diamond thick film.
Background technology
Indium nitride (InN) is the important member in the III group-III nitride.Compare with AlN with GaN, the mobility of InN and spike speed etc. all is the highest, in the application of electron devices such as high-speed high frequency transistor unique advantage is arranged; Its room temperature band gap is positioned at the near-infrared region, also is suitable for preparing photoelectric devices such as high efficiency solar cell, semiconductor light-emitting-diode and optical communication device.But because the InN decomposition temperature is low, require low growth temperature, high and lack suitable problems such as substrate material because of the nitrogenous source decomposition temperature, particularly to weather resistance and the heat dissipation problem of the device of high power, high, limited the device application of InN.
Summary of the invention
The present invention is exactly at the problems referred to above, and a kind of preparation method who prepares ECR-PEMOCVD low temperature depositing InN film on the self-supporting diamond thick film of the InN optoelectronic film that electric property is good, heat dispersion is good is provided.
For achieving the above object, the present invention adopts following technical scheme, the present invention includes following steps.
1) the self-supporting diamond thick film substrate is used acetone, ethanol, deionized water ultrasonic cleaning successively after, dry up with nitrogen and to send into reaction chamber.
2) adopt ECR-PEMOCVD(electron cyclotron resonace-plasma reinforcing and metal organic chemical vapor deposition, can adopt China Patent No. is 01101424.5, name is called disclosed equipment in " electronically cyclic resonating, microwave plasma reinforcing and metal and organic chemically vapor-phase depositing epitaxial system and technology ") system, reaction chamber is vacuumized, substrate is heated to 20～600 ℃, in reaction chamber, feed the trimethyl indium that hydrogen carries again, nitrogen, trimethyl indium is (1～2) with the nitrogen flow ratio: (100～200), control gas total pressure is 0.8～2.0Pa, electron cyclotron resonace reaction 30min～3h obtains the optoelectronic film at the InN of self-supporting diamond thick film substrate.
As a kind of preferred version, self-supporting diamond thick film substrate of the present invention is to prepare under the reaction source condition of methane and hydrogen in heated filament CVD system, and free standing diamond thickness is 1mm.
As another kind of preferred version, the purity of trimethyl indium of the present invention and the purity of nitrogen all are 99.99%.
As another kind of preferred version, the ultrasonic cleaning time of the present invention is 5 minutes, and reaction chamber is evacuated to 9.0 * 10
-4Pa.
As another kind of preferred version, trimethyl indium of the present invention and nitrogen flow are controlled by mass flowmeter, and electron cyclotron resonace power is 650W.
As another kind of preferred version, substrate of the present invention is heated to 200 ℃, and trimethyl indium and nitrogen flow are respectively 1sccm(milliliter per minute) and 100sccm, control gas total pressure is 1.0Pa, electron cyclotron resonace reaction 30min.
As another kind of preferred version, substrate of the present invention is heated to 500 ℃, and trimethyl indium and nitrogen flow are respectively 1sccm and 150sccm, and control gas total pressure is 2.0Pa, electron cyclotron resonace reaction 50min.
As another kind of preferred version, substrate of the present invention is heated to 600 ℃, and trimethyl indium and nitrogen flow are respectively 2sccm and 200sccm, and control gas total pressure is 1.5 Pa, electron cyclotron resonace reaction 120min.
Secondly, substrate of the present invention is heated to 400 ℃, and trimethyl indium and nitrogen flow are respectively 1sccm and 200sccm, and control gas total pressure is 1.0Pa, electron cyclotron resonace reaction 100min.
In addition, substrate of the present invention is heated to 600 ℃, and trimethyl indium and nitrogen flow are respectively 1.5sccm and 180sccm, and control gas total pressure is 1.0Pa, electron cyclotron resonace reaction 120min.
Beneficial effect of the present invention.
The ECR-PEMOCVD technology of low temperature depositing can be accurately controlled in utilization of the present invention, and the correlation parameter in the reaction process and material selected, set, thereby prepare high-quality InN optoelectronic film in self-supporting diamond thick film substrate substrate deposition, cost is very low.In addition, diamond has very high thermal conductivity and good thermotolerance, is well suited for the application such as device of high power, high; InN optoelectronic film product on the self-supporting diamond thick film substrate of the present invention has good electric property and heat dispersion after tested, is easy to prepare the powerful device of high frequency.
Description of drawings
The present invention will be further described below in conjunction with the drawings and specific embodiments.Protection domain of the present invention not only is confined to the statement of following content.
Fig. 1 is the X ray diffracting spectrum of self-supporting diamond.
Fig. 2 is the X ray diffracting spectrum of InN film on the embodiment 1 self-supporting diamond substrate.
The InN/ free-standing diamond film structural membrane synoptic diagram that Fig. 3 obtains for the inventive method.
1 is free-standing diamond film structure thick film substrate among Fig. 3, and 2 is the InN sample thin film.
Embodiment
The present invention includes following steps.
1) the self-supporting diamond thick film substrate is used acetone, ethanol, deionized water ultrasonic cleaning successively after, dry up with nitrogen and to send into reaction chamber.
2) adopt the ECR-PEMOCVD system, reaction chamber is vacuumized, substrate is heated to 20～600 ℃, in reaction chamber, feed trimethyl indium, the nitrogen that hydrogen carries again, trimethyl indium is (1～2) with the nitrogen flow ratio: (100～200), control gas total pressure is 0.8～2.0Pa, and electron cyclotron resonace reaction 30min～3h obtains the optoelectronic film at the InN of self-supporting diamond thick film substrate.
Described self-supporting diamond thick film substrate is to prepare under the reaction source condition of methane and hydrogen in heated filament CVD system, and its diamond is the substrate of freely standing, and free standing diamond thickness is 1mm.
The purity of described trimethyl indium and the purity of nitrogen all are 99.99%.
The described ultrasonic cleaning time is 5 minutes, and reaction chamber is evacuated to 9.0 * 10
-4Pa.
Described trimethyl indium and nitrogen flow are controlled by mass flowmeter, and electron cyclotron resonace power is 650W.
Described substrate is heated to 200 ℃, and trimethyl indium and nitrogen flow are respectively 1sccm(milliliter per minute) and 100sccm, control gas total pressure is 1.0Pa, electron cyclotron resonace reaction 30min.
Described substrate is heated to 500 ℃, and trimethyl indium and nitrogen flow are respectively 1sccm and 150sccm, and control gas total pressure is 2.0Pa, electron cyclotron resonace reaction 50min.
Described substrate is heated to 600 ℃, and trimethyl indium and nitrogen flow are respectively 2sccm and 200sccm, and control gas total pressure is 1.5 Pa, electron cyclotron resonace reaction 120min.
Described substrate is heated to 400 ℃, and trimethyl indium and nitrogen flow are respectively 1sccm and 200sccm, and control gas total pressure is 1.0Pa, electron cyclotron resonace reaction 100min.
Described substrate is heated to 600 ℃, and trimethyl indium and nitrogen flow are respectively 1.5sccm and 180sccm, and control gas total pressure is 1.0Pa, electron cyclotron resonace reaction 120min.
After the free standing diamond substrate cleaned with ultrasonic wave successively with acetone, ethanol and deionized water, dry up with nitrogen and to send into reaction chamber; Reaction chamber is evacuated to 9.0 * 10
-4Pa is heated to 200 ℃ with substrate, feeds trimethyl indium (TMIn), the nitrogen (N that hydrogen carries in reaction chamber
2), wherein TMIn and N
2The reaction source flow-ratio control is 1:100, and by quality flowmeter flow quantity control, flow parameter is respectively 1 sccm and 100sccm; Control gas total pressure is 1.0Pa; Be 650W in electron cyclotron resonance frequency, reaction 30min obtains the InN optoelectronic film on the self-supporting diamond thick film substrate.
Experiment finishes the back and adopts the Hall testing apparatus that mobility and the carrier concentration of film have been carried out test analysis.Its result is as shown in table 1, and on-chip its electric property of InN film of free standing diamond is good as can be seen from Table 1, and mobility and carrier concentration are better.Sample thin film has been carried out the analysis of X-ray diffraction, as shown in Figure 2, its result shows that ECR-PEMOCVD system low temperature depositing InN optoelectronic film on the free standing diamond substrate has good preferred orientation structure, shows that the InN film has crystalline quality preferably.Test result shows that the on-chip InN film of free standing diamond satisfies high frequency, and high power device is to the requirement of film quality.
The electric property of table 1 ECR-PEMOCVD low temperature depositing InN on the self-supporting diamond thick film.
| Sample | Mobility (cm 2/V·S) | Carrier concentration (cm -3) |
| InN film on the self-supporting diamond thick film substrate | 49.2 | 0.95×10 20 |
After the free standing diamond substrate cleaned with ultrasonic wave successively with acetone, ethanol and deionized water, dry up with nitrogen and to send into reaction chamber; Reaction chamber is evacuated to 9.0 * 10
-4Pa is heated to 500 ℃ with substrate, feeds trimethyl indium (TMIn), the nitrogen (N that hydrogen carries in reaction chamber
2), wherein TMIn and N
2The reaction source flow-ratio control is 1:150, and by quality flowmeter flow quantity control, flow parameter is respectively 1 sccm and 150sccm; Control gas total pressure is 2.0Pa; Be 650W in electron cyclotron resonance frequency, reaction 50min obtains the InN optoelectronic film on the self-supporting diamond thick film substrate.
Experiment finishes the back and adopts the Hall testing apparatus that mobility and the carrier concentration of film have been carried out test analysis.Its result is as shown in table 2, and on-chip its electric property of InN film of free standing diamond is good as can be seen from Table 2, and mobility and carrier concentration are better.Test result shows that the on-chip InN film of free standing diamond satisfies high frequency, and high power device is to film electricity performance demands.
The electric property of table 2 ECR-PEMOCVD low temperature depositing InN on the self-supporting diamond thick film.
| Sample | Mobility (cm 2/V·S) | Carrier concentration (cm -3) |
| InN film on the self-supporting diamond thick film substrate | 33.4 | 1.32×10 20 |
Embodiment 3.
After the free standing diamond substrate cleaned with ultrasonic wave successively with acetone, ethanol and deionized water, dry up with nitrogen and to send into reaction chamber; Reaction chamber is evacuated to 9.0 * 10
-4Pa is heated to 600 ℃ with substrate, feeds trimethyl indium (TMIn), the nitrogen (N that hydrogen carries in reaction chamber
2), wherein TMIn and N
2The reaction source flow-ratio control is 2:200, and by quality flowmeter flow quantity control, flow parameter is respectively 2 sccm and 200sccm; Control gas total pressure is 1.5Pa; Be 650W in electron cyclotron resonance frequency, reaction 120min obtains the InN optoelectronic film on the self-supporting diamond thick film substrate.
Experiment finishes the back and adopts the Hall testing apparatus that mobility and the carrier concentration of film have been carried out test analysis.Its result is as shown in table 3, and on-chip its electric property of InN film of free standing diamond is good as can be seen from Table 3, and mobility and carrier concentration are better.Test result shows that the on-chip InN film of free standing diamond satisfies high frequency, and high power device is to film electricity performance demands.
The electric property of table 3 ECR-PEMOCVD low temperature depositing InN on the self-supporting diamond thick film.
| Sample | Mobility (cm2/VS) | Carrier concentration (cm-3) |
| InN film on the self-supporting diamond thick film substrate | 22.8 | 2.16×10 20 |
Embodiment 4.
After the free standing diamond substrate cleaned with ultrasonic wave successively with acetone, ethanol and deionized water, dry up with nitrogen and to send into reaction chamber; Reaction chamber is evacuated to 9.0 * 10
-4Pa is heated to 400 ℃ with substrate, feeds trimethyl indium (TMIn), the nitrogen (N that hydrogen carries in reaction chamber
2), wherein TMIn and N
2The reaction source flow-ratio control is 1:200, and by quality flowmeter flow quantity control, flow parameter is respectively 1sccm and 200sccm; Control gas total pressure is 1.0Pa; Be 650W in electron cyclotron resonance frequency, reaction 100min obtains the InN optoelectronic film on the self-supporting diamond thick film substrate.
Experiment finishes the back and adopts the Hall testing apparatus that mobility and the carrier concentration of film have been carried out test analysis.Its result is as shown in table 4, and on-chip its electric property of InN film of free standing diamond is good as can be seen from Table 4, and mobility and carrier concentration are better.Test result shows that the on-chip InN film of free standing diamond satisfies high frequency, and high power device is to film electricity performance demands.
The electric property of table 4ECR-PEMOCVD low temperature depositing InN on the self-supporting diamond thick film.
| Sample | Mobility (cm 2/V·S) | Carrier concentration (cm -3) |
| InN film on the self-supporting diamond thick film substrate | 38.6 | 1.36×10 20 |
Embodiment 5.
After the free standing diamond substrate cleaned with ultrasonic wave successively with acetone, ethanol and deionized water, dry up with nitrogen and to send into reaction chamber; Reaction chamber is evacuated to 9.0 * 10
-4Pa is heated to 600 ℃ with substrate, feeds trimethyl indium (TMIn), the nitrogen (N that hydrogen carries in reaction chamber
2), wherein TMIn and N
2The reaction source flow-ratio control is 1.5:180, and by quality flowmeter flow quantity control, flow parameter is respectively 1.5sccm and 180sccm; Control gas total pressure is 1.0Pa; Be 650W in electron cyclotron resonance frequency, reaction 120min obtains the InN optoelectronic film on the self-supporting diamond thick film substrate.
Experiment finishes the back and adopts the Hall testing apparatus that mobility and the carrier concentration of film have been carried out test analysis.Its result is as shown in table 5, and on-chip its electric property of InN film of free standing diamond is good as can be seen from Table 5, and mobility and carrier concentration are better.Test result shows that the on-chip InN film of free standing diamond satisfies high frequency, and high power device is to film electricity performance demands.
The electric property of table 5ECR-PEMOCVD low temperature depositing InN on the self-supporting diamond thick film.
| Sample | Mobility (cm 2/V·S) | Carrier concentration (cm- 3) |
| InN film on the self-supporting diamond thick film substrate | 23.5 | 1.69×10 20 |
The electrical performance testing of sample of the present invention Hall testing apparatus, the model of Hall system is HL5500PC, range is 0.1 Ohm/square-100 GOhm/square).
The model of the used instrument of x ray diffraction analysis x is: Bruker AXS D8.
As shown in Figure 1, the free standing diamond substrate is polycrystalline, has preferred orientation, and quality is good, satisfies high power device to the requirement of thermal diffusivity.
Be understandable that, more than about specific descriptions of the present invention, only for the present invention being described and being not to be subject to the described technical scheme of the embodiment of the invention, those of ordinary skill in the art is to be understood that, still can make amendment or be equal to replacement the present invention, to reach identical technique effect; Use needs as long as satisfy, all within protection scope of the present invention.
Claims (10)
1.ECR-PEMOCVD the preparation method of low temperature depositing InN film on the self-supporting diamond thick film is characterized in that may further comprise the steps:
1) the self-supporting diamond thick film substrate is used acetone, ethanol, deionized water ultrasonic cleaning successively after, dry up with nitrogen and to send into reaction chamber;
2) adopt ECR-PEMOCVD(electron cyclotron resonace-plasma reinforcing and metal organic chemical vapor deposition, can adopt China Patent No. is 01101424.5, name is called disclosed equipment in " electronically cyclic resonating, microwave plasma reinforcing and metal and organic chemically vapor-phase depositing epitaxial system and technology ") system, reaction chamber is vacuumized, substrate is heated to 20～600 ℃, in reaction chamber, feed the trimethyl indium that hydrogen carries again, nitrogen, trimethyl indium is (1～2) with the nitrogen flow ratio: (100～200), control gas total pressure is 0.8～2.0Pa, electron cyclotron resonace reaction 30min～3h obtains the optoelectronic film at the InN of self-supporting diamond thick film substrate.
2. according to the preparation method of the described ECR-PEMOCVD of claim 1 low temperature depositing InN film on the self-supporting diamond thick film, it is characterized in that described self-supporting diamond thick film substrate is to prepare under the reaction source condition of methane and hydrogen in heated filament CVD system, free standing diamond thickness is 1mm.
3. according to the preparation method of the described ECR-PEMOCVD of claim 1 low temperature depositing InN film on the self-supporting diamond thick film, it is characterized in that the purity of described trimethyl indium and the purity of nitrogen all are 99.99%.
4. according to the preparation method of the described ECR-PEMOCVD of claim 1 low temperature depositing InN film on the self-supporting diamond thick film, it is characterized in that the described ultrasonic cleaning time is 5 minutes, reaction chamber is evacuated to 9.0 * 10
-4Pa.
5. according to the preparation method of the described ECR-PEMOCVD of claim 1 low temperature depositing InN film on the self-supporting diamond thick film, it is characterized in that described trimethyl indium and nitrogen flow controlled by mass flowmeter, electron cyclotron resonace power is 650W.
6. according to the preparation method of the described ECR-PEMOCVD of claim 1 low temperature depositing InN film on the self-supporting diamond thick film, it is characterized in that described substrate is heated to 200 ℃, trimethyl indium and nitrogen flow are respectively 1sccm and 100sccm, control gas total pressure is 1.0Pa, electron cyclotron resonace reaction 30min.
7. according to the preparation method of the described ECR-PEMOCVD of claim 1 low temperature depositing InN film on the self-supporting diamond thick film, it is characterized in that described substrate is heated to 500 ℃, trimethyl indium and nitrogen flow are respectively 1sccm and 150sccm, control gas total pressure is 2.0Pa, electron cyclotron resonace reaction 50min.
8. according to the preparation method of the described ECR-PEMOCVD of claim 1 low temperature depositing InN film on the self-supporting diamond thick film, it is characterized in that described substrate is heated to 600 ℃, trimethyl indium and nitrogen flow are respectively 2sccm and 200sccm, control gas total pressure is 1.5 Pa, electron cyclotron resonace reaction 120min.
9. according to the preparation method of the described ECR-PEMOCVD of claim 1 low temperature depositing InN film on the self-supporting diamond thick film, it is characterized in that described substrate is heated to 400 ℃, trimethyl indium and nitrogen flow are respectively 1sccm and 200sccm, control gas total pressure is 1.0Pa, electron cyclotron resonace reaction 100min.
10. according to the preparation method of the described ECR-PEMOCVD of claim 1 low temperature depositing InN film on the self-supporting diamond thick film, it is characterized in that described substrate is heated to 600 ℃, trimethyl indium and nitrogen flow are respectively 1.5sccm and 180sccm, control gas total pressure is 1.0Pa, electron cyclotron resonace reaction 120min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310298983.7A CN103334089B (en) | 2013-07-17 | 2013-07-17 | The preparation method of ECR-PEMOCVD low temperature depositing InN film on Diamond wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310298983.7A CN103334089B (en) | 2013-07-17 | 2013-07-17 | The preparation method of ECR-PEMOCVD low temperature depositing InN film on Diamond wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103334089A true CN103334089A (en) | 2013-10-02 |
| CN103334089B CN103334089B (en) | 2015-08-19 |
Family
ID=49242282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310298983.7A Active CN103334089B (en) | 2013-07-17 | 2013-07-17 | The preparation method of ECR-PEMOCVD low temperature depositing InN film on Diamond wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103334089B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112760612A (en) * | 2020-12-28 | 2021-05-07 | 吉林工程技术师范学院 | Preparation method of self-supporting nano-needle porous diamond |
| CN114790541A (en) * | 2022-03-09 | 2022-07-26 | 沈阳工程学院 | Low-temperature deposition Ga on self-sustaining diamond thick film substrate 2 O 3 Method for producing thin film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185583A (en) * | 2011-03-16 | 2011-09-14 | 大连理工大学 | AlN/GaN/freestanding diamond structured surface acoustic wave (SAW) device and preparation method thereof |
-
2013
- 2013-07-17 CN CN201310298983.7A patent/CN103334089B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185583A (en) * | 2011-03-16 | 2011-09-14 | 大连理工大学 | AlN/GaN/freestanding diamond structured surface acoustic wave (SAW) device and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| QIN FUWEN: "Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD", 《RARE METALS》, vol. 31, no. 2, 30 April 2012 (2012-04-30) * |
| 王文彦: "氮气流量对玻璃衬底上低温沉积GaN 薄膜结晶性的影响", 《半导体学报》, vol. 29, no. 12, 31 December 2008 (2008-12-31) * |
| 陈伟绩: "TMGa 流量对玻璃衬底上低温沉积GaN 的影响", 《真空科学与技术学报》, vol. 30, no. 4, 31 August 2012 (2012-08-31) * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112760612A (en) * | 2020-12-28 | 2021-05-07 | 吉林工程技术师范学院 | Preparation method of self-supporting nano-needle porous diamond |
| CN112760612B (en) * | 2020-12-28 | 2022-07-01 | 吉林工程技术师范学院 | Preparation method of self-supporting nano-needle porous diamond |
| CN114790541A (en) * | 2022-03-09 | 2022-07-26 | 沈阳工程学院 | Low-temperature deposition Ga on self-sustaining diamond thick film substrate 2 O 3 Method for producing thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103334089B (en) | 2015-08-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102677022A (en) | Atomic layer deposition device | |
| CN103086370A (en) | Method for preparing graphene strip by adopting low-temperature chemical vapour deposition | |
| CN102534570A (en) | Method for preparing microcrystalline silicon film by plasma-enhanced chemical vapor deposition | |
| CN103334089A (en) | Preparation method of InN (indium nitride) thin film through low-temperature deposition on self-supporting diamond thick film by ECR-PEMOCVD (electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition) | |
| CN103334088B (en) | The method of low temperature depositing InN film on a glass substrate | |
| CN104328390B (en) | A kind of preparation method of GaN/ diamond film composite sheet | |
| CN103866277B (en) | Method for preparing double-acceptor co-doped zinc oxide film by atomic layer deposition | |
| CN103334090B (en) | The preparation method of InN/AlN/ glass structure | |
| CN103352203B (en) | The preparation method of ECR-PEMOCVD low temperature depositing InN film on AlN buffer layer/diamond thin/Si multi-layer film structure substrate | |
| CN103779424A (en) | Amorphous state gallium nitride or indium nitride thin film transistor and preparation method thereof | |
| CN104846438A (en) | Growth method of aluminum indium nitride film | |
| CN103484831A (en) | Method for growing graphene thin film on gallium-containing nitride | |
| CN103388130B (en) | The preparation method of ECR-PEMOCVD low temperature depositing InN film on ZnO buffer/diamond thin/Si multi-layer film structure substrate | |
| CN103388146B (en) | ECR-PEMOCVD system is to the preparation method of InN/ZnO/ free-standing diamond film structure | |
| CN103361629B (en) | The preparation method of ECR-PEMOCVD low temperature depositing InN film on GaN buffer layer/diamond thin/Si multi-layer film structure substrate | |
| CN103352204B (en) | ECR-PEMOCVD system is to the preparation method of InN/GaN/ free-standing diamond film structure | |
| CN103352208B (en) | The preparation method of ECR-PEMOCVD low temperature depositing InN film on the Si of gold-plated diamond thin film | |
| CN103388131B (en) | ECR-PEMOCVD system is to the preparation method of InN/AlN/ free-standing diamond film structure | |
| CN102399092B (en) | Preparation method for nitrogen-doped nano-diamond thin film | |
| WO2013104200A1 (en) | Method for using ald device to grow gallium nitride film | |
| CN103352209B (en) | The preparation method of InN/GaN/ glass structure | |
| CN107611014A (en) | A kind of preparation method of GaN thermoelectric film materials | |
| CN203697610U (en) | Indium nitride/gallium nitride/glass structure | |
| CN101369620A (en) | Method for implementing gallium nitride thin film low temperature deposition on silicon substrate | |
| CN104037282A (en) | AlGaN film grown on Si substrate, preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| CB03 | Change of inventor or designer information |
Inventor after: Gao Ning Inventor after: Li Dongyang Inventor after: Zhao Haiyan Inventor after: Lv Zhonghua Inventor after: Shu Xinlei Inventor after: Leng Xuemin Inventor after: Yu Geng Inventor after: Mao Wuping Inventor after: Liu Yangyi Inventor after: Zhong Hongyu Inventor before: Zhang Dong Inventor before: Du Shipeng Inventor before: Zhao Yan Inventor before: Wang Baoshi Inventor before: Yi Yunlong Inventor before: Jin Yuexin Inventor before: Zhang Xiangming Inventor before: Wang Jian Inventor before: Liu Liying Inventor before: Wang Gang Inventor before: Guo Rui Inventor before: Zhang Tieyan Inventor before: Wang Shuaijie Inventor before: Ju Zhenhe Inventor before: Wang Xiaowen Inventor before: Cao Fuyi Inventor before: Zhang Xiaohui Inventor before: Zhang Hongli Inventor before: Sun Yong Inventor before: Li Yucai |
|
| COR | Change of bibliographic data | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160519 Address after: 110136 Shenbei New Area, Liaoning, Shenyang North Road, No. 49, No. Patentee after: SHENYANG JIAYUE POWER TECHNOLOGY CO., LTD. Address before: Shenbei New Area Puchang road Shenyang City, Liaoning province 110136 No. 18 Patentee before: Shenyang Engineering College |