CN203697610U - Indium nitride/gallium nitride/glass structure - Google Patents
Indium nitride/gallium nitride/glass structure Download PDFInfo
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- CN203697610U CN203697610U CN201320423567.0U CN201320423567U CN203697610U CN 203697610 U CN203697610 U CN 203697610U CN 201320423567 U CN201320423567 U CN 201320423567U CN 203697610 U CN203697610 U CN 203697610U
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Abstract
The utility model belongs to the technical field of novel photo-electric materials and provides an indium nitride/gallium nitride/glass structure which is good in electric property, good in stability and low in cost. The indium nitride/gallium nitride/glass structure comprises a glass substrate; the key point of the structure is that: a GaN buffering layer film is arranged on the glass substrate in a depositing manner; an InN photo-electric film is arranged on the GaN buffer layer film in the depositing manner.
Description
Technical field
the utility model belongs to novel photoelectric material technology field, relates in particular to a kind of indium nitride/gallium nitride/glass structure.
Background technology
indium nitride (InN) is the important member in III group-III nitride, compares with ALN with GaN, and the mobility of InN and spike speed etc. is all the highest, in the application of the electronic devices such as high-speed high frequency transistor, has unique advantage; Its room temperature band gap is positioned near infrared region, is also suitable for preparing the photoelectric devices such as high efficiency solar cell, semiconductor light-emitting-diode and optic communication device.Existing InN film is generally grown on some substrates such as sapphire.As everyone knows, the price of sapphire substrate is higher, uses it as the substrate of InN material, makes the cost of the device of InN material base be difficult to lower, and has seriously hindered the development of InN material devices.
Summary of the invention
the utility model is exactly for the problems referred to above, provides that a kind of electric property is good, good stability and the low indium nitride/gallium nitride/glass structure of cost.
for achieving the above object, the utility model adopts following technical scheme, and the utility model comprises glass substrate, on its structural feature glass substrate, deposits GaN buffer layer thin film, deposits InN optoelectronic film on GaN buffer layer thin film.
as a kind of preferred version, described glass substrate described in the utility model is corning glass substrate.
as another kind of preferred version, the thickness of InN optoelectronic film described in the utility model is 400nm～2 μ m.
secondly, the thickness of GaN buffer layer thin film described in the utility model is 50nm～300nm.
in addition, the thickness of glass substrate described in the utility model is 0.2mm～0.8mm.
the utility model beneficial effect.
the utility model deposits high-quality InN optoelectronic film on GaN/ glass substrate substrate, and cost is very low.In addition, the utility model has good electric property and stability after tested at the structural InN optoelectronic film of GaN/ glass substrate product, is easy to prepare the powerful device of high-frequency.Secondly, GaN has similar crystal structure to InN, as the cushion between InN and glass, has well solved the lattice mismatch issue existing between InN epitaxial layer and glass substrate.
Brief description of the drawings
below in conjunction with the drawings and specific embodiments, the utility model is described further.The utility model protection domain is not only confined to the statement of following content.
fig. 1 is the utility model GaN/ glass substrate structure X ray diffracting spectrum.
fig. 2 is indium nitride/gallium nitride/corning glass substrate structure X ray diffracting spectrum of the utility model example 1.
fig. 3 is the utility model indium nitride/gallium nitride/corning glass substrate structure schematic diagram.
in Fig. 3,1 is corning glass substrate, and 2 is GaN film cushion, and 3 is InN optoelectronic film.
Detailed description of the invention
as shown in the figure, the utility model comprises glass substrate, deposits GaN buffer layer thin film on glass substrate, deposits InN optoelectronic film on GaN buffer layer thin film.
described glass substrate is corning glass substrate.
the thickness of described InN optoelectronic film is 400nm～2 μ m.
the thickness of described GaN buffer layer thin film is 50nm～300nm.
the thickness of described glass substrate is 0.2mm～0.8mm.
the utility model is preparation method comprise the following steps.
1) glass substrate is used successively acetone, ethanol, deionized water successively after Ultrasonic Cleaning, dried up and send into reative cell with nitrogen.
2) adopt ECR-PEMOCVD(electron cyclotron resonace-plasma reinforcing and metal organic chemical vapor deposition) system, reative cell is vacuumized, heating glass substrate, in reative cell, pass into trimethyl gallium, the nitrogen that hydrogen carries, the flow of trimethyl gallium and nitrogen is respectively 0.5sccm(milliliter per minute)～0.8sccm and 80sccm～120sccm; Control gas total pressure, electron cyclotron resonace reacts the GaN buffer layer thin film obtaining at glass substrate.
3) continue to adopt ECR-PEMOCVD system, reative cell is vacuumized, glass substrate is heated to 200 DEG C～400 DEG C, in reative cell, pass into trimethyl indium, the nitrogen that hydrogen carries, trimethyl indium is (4～5) with nitrogen flow ratio: (100～150), controlling gas total pressure is 0.8～2.0Pa, and electron cyclotron resonace reaction 30min～3h deposition is prepared into InN film, obtains the InN optoelectronic film on GaN buffer layer thin film/glass structure.
described glass substrate is corning glass substrate.
the purity of described trimethyl gallium, trimethyl indium and the purity of nitrogen are 99.99%.
the described step 1) Ultrasonic Cleaning time is 5 minutes.
step 2) reative cell is evacuated to 9.0 × 10
-4
pa, substrate heating to 485 DEG C, by mass flowmenter control trimethyl gallium and nitrogen flow, controlling gas total pressure is 1.2Pa; Electron cyclotron resonace power is 650W, reaction 30min.
described step 3) reative cell is evacuated to 8.0 × 10
-4
pa, by the flow of mass flowmenter control trimethyl indium and nitrogen, electron cyclotron resonace power is 650W.
described step 2) flow of trimethyl gallium and nitrogen is respectively 0.5sccm and 80sccm.
step 3) is by substrate heating to 300 DEG C, and trimethyl indium and nitrogen flow are respectively 4sccm and 150sccm, and controlling gas total pressure is 1.0Pa, electron cyclotron resonace reaction 180min.
described step 2) flow of trimethyl gallium and nitrogen is respectively 0.6sccm and 90sccm.
step 3) is by substrate heating to 200 DEG C, and trimethyl indium and nitrogen flow are respectively 4sccm and 120sccm, and controlling gas total pressure is 1.2Pa, electron cyclotron resonace reaction 120min.
described step 2) flow of trimethyl gallium and nitrogen is respectively 0.5sccm and 120sccm.
step 3) is by substrate heating to 100 DEG C, and trimethyl indium and nitrogen flow are respectively 5sccm and 120sccm, and controlling gas total pressure is 1.4Pa, electron cyclotron resonace reaction 30min.
described step 2) flow of trimethyl gallium and nitrogen is respectively 0.8sccm and 120sccm.
step 3) is by substrate heating to 20 DEG C, and trimethyl indium and nitrogen flow are respectively 5sccm and 100sccm, and controlling gas total pressure is 2.0Pa, electron cyclotron resonace reaction 80min.
described step 2) flow of trimethyl gallium and nitrogen is respectively 0.8sccm and 100sccm.
step 3) is by substrate heating to 100 DEG C, and trimethyl indium and nitrogen flow are respectively 4sccm and 140sccm, and controlling gas total pressure is 0.9Pa, electron cyclotron resonace reaction 110min.
embodiment 1.
use successively acetone, ethanol and deionized water Ultrasonic Cleaning after 5 minutes corning glass substrate, dry up and send into reative cell with nitrogen; Adopt ECR-PEMOCVD system, reative cell is evacuated to 9.0 × 10
-4
pa by substrate heating to 485 DEG C, passes into trimethyl gallium, the nitrogen that hydrogen carries in reative cell, and its two flow is 0.5sccm and 80sccm, by mass flowmenter control; Controlling gas total pressure is 1.2Pa; Be 650W at electron cyclotron resonace power, reaction 30min, obtains the buffer layer thin film at the GaN of corning glass substrate.Then continue to adopt ECR-PEMOCVD system, reative cell is evacuated to 8.0 × 10
-4
pa by substrate heating to 300 DEG C, passes into trimethyl indium, the nitrogen that hydrogen carries in reative cell, and its two flow-rate ratio is 4:150, and its flow is 4sccm and 150sccm, by mass flowmenter control; Controlling gas total pressure is 1.0Pa; Be 650W at electron cyclotron resonace power, reaction 180min, obtains at the structural InN optoelectronic film of GaN/ free-standing diamond film.
experiment finishes crystal property and the preferred orientation of rear employing X-ray diffraction analysis equipment to film and has carried out test analysis.As shown in Figure 2, the InN film of GaN/ corning glass substrate structure has single preferred orientation to its result as seen from Figure 2, and InN thin film crystallization performance is good.Sample thin film has been carried out to the high energy electron analysis of spreading out, and test result shows, the InN film on GaN/ corning glass substrate structure meets high-frequency, the requirement of high power device to film quality.
embodiment 2.
use successively acetone, ethanol and deionized water Ultrasonic Cleaning after 5 minutes corning glass substrate, dry up and send into reative cell with nitrogen; Adopt ECR-PEMOCVD system, reative cell is evacuated to 9.0 × 10
-4
pa by substrate heating to 485 DEG C, passes into trimethyl gallium, the nitrogen that hydrogen carries in reative cell, and its two flow is 0.6sccm and 90sccm, by mass flowmenter control; Controlling gas total pressure is 1.2Pa; Be 650W at electron cyclotron resonace power, reaction 30min, obtains the buffer layer thin film at the GaN of corning glass substrate.Then continue to adopt ECR-PEMOCVD system, reative cell is evacuated to 8.0 × 10
-4
pa by substrate heating to 200 DEG C, passes into trimethyl indium, the nitrogen that hydrogen carries in reative cell, and its two flow-rate ratio is 4:120, and its flow is 4sccm and 120sccm, by mass flowmenter control; Controlling gas total pressure is 1.2Pa; Be 650W at electron cyclotron resonace power, reaction 120min, obtains at the structural InN optoelectronic film of GaN/ free-standing diamond film.Experiment finishes rear InN film sample have been carried out to test analysis, and its test result shows, the InN film on GaN/ corning glass substrate structure meets high-frequency, the requirement of high power device to film quality.
embodiment 3.
use successively acetone, ethanol and deionized water Ultrasonic Cleaning after 5 minutes corning glass substrate, dry up and send into reative cell with nitrogen; Adopt ECR-PEMOCVD system, reative cell is evacuated to 9.0 × 10
-4
pa by substrate heating to 485 DEG C, passes into trimethyl gallium, the nitrogen that hydrogen carries in reative cell, and its two flow is 0.5sccm and 120sccm, by mass flowmenter control; Controlling gas total pressure is 1.2Pa; Be 650W at electron cyclotron resonace power, reaction 30min, obtains the buffer layer thin film at the GaN of corning glass substrate.Then continue to adopt ECR-PEMOCVD system, reative cell is evacuated to 8.0 × 10
-4
pa by substrate heating to 100 DEG C, passes into trimethyl indium, the nitrogen that hydrogen carries in reative cell, and its two flow-rate ratio is 5:120, and its flow is 5sccm and 120sccm, by mass flowmenter control; Controlling gas total pressure is 1.4Pa; Be 650W at electron cyclotron resonace power, reaction 30min, obtains at the structural InN optoelectronic film of GaN/ free-standing diamond film.Experiment finishes rear InN film sample have been carried out to test analysis, and its test result shows, the InN film on GaN/ corning glass substrate structure meets high-frequency, the requirement of high power device to film quality.
embodiment 4.
use successively acetone, ethanol and deionized water Ultrasonic Cleaning after 5 minutes corning glass substrate, dry up and send into reative cell with nitrogen; Adopt ECR-PEMOCVD system, reative cell is evacuated to 9.0 × 10
-4
pa by substrate heating to 485 DEG C, passes into trimethyl gallium, the nitrogen that hydrogen carries in reative cell, and its two flow is 0.8sccm and 120sccm, by mass flowmenter control; Controlling gas total pressure is 1.2Pa; Be 650W at electron cyclotron resonace power, reaction 30min, obtains the buffer layer thin film at the GaN of corning glass substrate.Then continue to adopt ECR-PEMOCVD system, reative cell is evacuated to 8.0 × 10
-4
pa by substrate heating to 20 DEG C, passes into trimethyl indium, the nitrogen that hydrogen carries in reative cell, and its two flow-rate ratio is 5:100, and its flow is 5sccm and 100sccm, by mass flowmenter control; Controlling gas total pressure is 2.0Pa; Be 650W at electron cyclotron resonace power, reaction 80min, obtains at the structural InN optoelectronic film of GaN/ free-standing diamond film.Experiment finishes rear InN film sample have been carried out to test analysis, and its test result shows, the InN film on GaN/ corning glass substrate structure meets high-frequency, the requirement of high power device to film quality.
embodiment 5.
use successively acetone, ethanol and deionized water Ultrasonic Cleaning after 5 minutes corning glass substrate, dry up and send into reative cell with nitrogen; Adopt ECR-PEMOCVD system, reative cell is evacuated to 9.0 × 10
-4
pa by substrate heating to 485 DEG C, passes into trimethyl gallium, the nitrogen that hydrogen carries in reative cell, and its two flow is 0.8sccm and 100sccm, by mass flowmenter control; Controlling gas total pressure is 1.2Pa; Be 650W at electron cyclotron resonace power, reaction 30min, obtains the buffer layer thin film at the GaN of corning glass substrate.Then continue to adopt ECR-PEMOCVD system, reative cell is evacuated to 8.0 × 10
-4
pa by substrate heating to 100 DEG C, passes into trimethyl indium, the nitrogen that hydrogen carries in reative cell, and its two flow-rate ratio is 4:140, and its flow is 4sccm and 140sccm, by mass flowmenter control; Controlling gas total pressure is 0.9Pa; Be 650W at electron cyclotron resonace power, reaction 110min, obtains at the structural InN optoelectronic film of GaN/ free-standing diamond film.Experiment finishes rear InN film sample have been carried out to test analysis, and its test result shows, the InN film on GaN/ corning glass substrate structure meets high-frequency, the requirement of high power device to film quality.
the crystal property test of the utility model sample is X-ray diffraction analysis, and wherein the model of X-ray diffraction analysis instrument is: Bruker AXS D8.
it is Picoscan 2500 that the utility model sample topography utilizes the model of AFM (AFM), originates in Agilent company.
be understandable that, above about specific descriptions of the present utility model, only for being described, the utility model is not limited to the described technical scheme of the utility model embodiment, those of ordinary skill in the art is to be understood that, still can modify or be equal to replacement the utility model, to reach identical technique effect; Use needs as long as meet, all within protection domain of the present utility model.
Claims (1)
1.
indium nitride/gallium nitride/glass structure, comprises glass substrate, it is characterized in that depositing GaN buffer layer thin film on glass substrate, deposits InN optoelectronic film on GaN buffer layer thin film; Described glass substrate is corning glass substrate; The thickness of described InN optoelectronic film is 400nm～2 μ m; The thickness of described GaN buffer layer thin film is 50nm～300nm; The thickness of described glass substrate is 0.2mm～0.8mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320423567.0U CN203697610U (en) | 2013-07-17 | 2013-07-17 | Indium nitride/gallium nitride/glass structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320423567.0U CN203697610U (en) | 2013-07-17 | 2013-07-17 | Indium nitride/gallium nitride/glass structure |
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| CN203697610U true CN203697610U (en) | 2014-07-09 |
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| CN201320423567.0U Expired - Lifetime CN203697610U (en) | 2013-07-17 | 2013-07-17 | Indium nitride/gallium nitride/glass structure |
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| C14 | Grant of patent or utility model | ||
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Granted publication date: 20140709 |
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