CN103325891A - Light emitting diode element and manufacturing method thereof - Google Patents
Light emitting diode element and manufacturing method thereof Download PDFInfo
- Publication number
- CN103325891A CN103325891A CN2012101808825A CN201210180882A CN103325891A CN 103325891 A CN103325891 A CN 103325891A CN 2012101808825 A CN2012101808825 A CN 2012101808825A CN 201210180882 A CN201210180882 A CN 201210180882A CN 103325891 A CN103325891 A CN 103325891A
- Authority
- CN
- China
- Prior art keywords
- ohmic contact
- layer
- contact layer
- epitaxial loayer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims description 38
- 238000009940 knitting Methods 0.000 claims description 25
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 23
- 229910052737 gold Inorganic materials 0.000 claims description 23
- 239000010931 gold Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 22
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 229910005540 GaP Inorganic materials 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 15
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 14
- 238000007772 electroless plating Methods 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 12
- 238000009616 inductively coupled plasma Methods 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
- HOHAQBNFPZHTJB-UHFFFAOYSA-N beryllium gold Chemical compound [Be].[Au] HOHAQBNFPZHTJB-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000002905 metal composite material Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 238000007731 hot pressing Methods 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 208
- 230000008020 evaporation Effects 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a manufacturing method of a light-emitting diode element, which comprises the following steps: providing an epitaxial substrate; forming an epitaxial layer on the epitaxial substrate, wherein the epitaxial layer is provided with a first side surface and a second side surface which are opposite, and the first side surface is jointed with the surface of the epitaxial substrate; forming a first ohmic contact layer on the second side surface of the epitaxial layer; forming a bonding layer on the first ohmic contact layer, and bonding the bonding substrate to the first ohmic contact layer through the bonding layer; removing the epitaxial substrate; forming a second ohmic contact layer on the first side surface of the epitaxial layer; forming a through hole exposing the first ohmic contact layer; forming a conductive layer in the through hole and electrically connected with the first ohmic contact layer; and forming a first electrode and a second electrode on the epitaxial layer, wherein the first electrode is electrically connected with the first ohmic contact layer through the conducting layer, and the second electrode is electrically connected with the second ohmic contact layer. The manufacturing method of the light-emitting diode element can reduce the manufacturing process cost and ensure the reliability of the lead wire connected with the first electrode.
Description
Technical field
The present invention relates to a kind of light-emitting diode and manufacture method thereof, particularly relate to a kind of light-emitting diode and manufacture method thereof that reduces the manufacture craft cost and guarantee lead connection reliability.
Background technology
(light-emitting diode LED) is a kind of light-emitting component that is formed by semi-conducting material manufacturing to light-emitting diode.Because light-emitting diode belongs to chemiluminescence, have advantages such as power consumption is low, component life is long, reaction speed is fast, add the little characteristic of making minimum or arrayed elements easily of volume, therefore in recent years along with technology is constantly progressive, its range of application has contained the indicator light of computer or household appliances, backlight and even traffic sign or the automobile-used indicator light of liquid crystal indicator.
Because as substrate, but because GaAs substrate itself is light tight, so the light that sends of LED has and over halfly absorbed by the GaAs substrate, causes the LED luminous efficiency not good with GaAs material for the LED of the rectilinear electrode structure of traditional quaternary.
In the another kind of prior art, the LED of horizontal electrode can remove the GaAs substrate of script meeting extinction, and replacing with aluminum oxide substrate becomes the substrate of LED.Though the light transmission of aluminum oxide substrate is good, can improve the luminous extraction yield of LED, promote the luminous efficiency of LED, yet, because aluminum oxide substrate conductivity is not good, therefore, it is the horizontal electrode structure that the configuration structure of electrode then needs by originally traditional rectilinear electrode improvement.
See also Figure 1A and Figure 1B, be existing LED manufacture craft schematic diagram with Improvement type horizontal electrode of aluminum oxide substrate.Shown in Figure 1A, at first, growth epitaxial loayer 11 on the epitaxial substrate (not shown), then form p-type ohmic contact layer 14 in substrate, engage and remove epitaxial substrate by a grafting material 12 with a bonding substrate 13 again, form n type ohmic contact layer 15 afterwards in epitaxial loayer 11, existing LED1 has bonding substrate 13, grafting material 12, p-type ohmic contact layer 14, an epitaxial loayer 11 and n type ohmic contact layer 15 in regular turn.
Shown in Figure 1A and Figure 1B, in LED 1 in order to make the electrode that can electrically conduct with p-type ohmic contact layer 14, use photoresist P to assist to define the position of perforate 16 in the prior art, to pass through inductively coupled plasma (Inductively Coupled Plasma, ICP) etching and run through epitaxial loayer 11, to expose p-type ohmic contact layer 14, use the electron gun evaporation to form metal level 161 and two electrodes 171 then, 172, wherein, the n type ohmic contact layer 15 of electrode 171 cover parts and form to be electrically connected, electrode 172 is electrically connected with the p-type ohmic contact layer 14 that is exposed to perforate 16 by metal level 161.
But because the degree of depth of perforate 16 is bigger, just depth-to-width ratio is bigger, and when carrying out directive electron gun evaporation, regular meeting causes the metal level 161 thickness deficiencies in perforate 16 sidewalls, even may influence the reliability of product.But if the thicker metal level 161 of evaporation is guaranteed the reliability of electrically connect, then can cause the cost that uses metal material to increase, and the increase of manufacture craft time.
Therefore, how to provide a kind of method of the manufacturing light-emitting diode that promotes reliability and reduce cost, become one of important topic.
Summary of the invention
Because above-mentioned problem, the object of the present invention is to provide a kind of method of the manufacturing light-emitting diode that promotes reliability and reduce cost, the cost of avoiding utilizing in the prior art electron gun evaporation conductive layer to cause in perforation increases and the problem of reliability deficiency.
For reaching above-mentioned purpose, the manufacture method of foundation a kind of light-emitting diode of the present invention comprises provides an epitaxial substrate; Form an epitaxial loayer on epitaxial substrate, epitaxial loayer has one first relative side surface and one second side surface, a surface engagement of first side surface and epitaxial substrate; Form second side surface of one first ohmic contact layer on epitaxial loayer; Form a knitting layer on first ohmic contact layer, by knitting layer one bonding substrate is engaged on first ohmic contact layer; Remove epitaxial substrate; Form one second ohmic contact layer on first side surface of epitaxial loayer; Form a perforation that exposes first ohmic contact layer; Form a conductive layer in perforation, and be electrically connected with first ohmic contact layer; And form one first electrode and one second electrode on epitaxial loayer, and first electrode is electrically connected first ohmic contact layer via conductive layer, and second electrode is electrically connected with second ohmic contact layer.
In a preferred embodiment of the present invention, more comprise formation one separator and cover epitaxial loayer and second ohmic contact layer, but expose first electrode and second electrode.
In a preferred embodiment of the present invention, epitaxial substrate is GaAs substrate or nitride substrate.
In a preferred embodiment of the present invention, epitaxial loayer is formed at this epitaxial substrate with Metalorganic chemical vapor deposition.
In a preferred embodiment of the present invention, first ohmic contact layer is the p-type ohmic contact layer, and second ohmic contact layer is n type ohmic contact layer.
In a preferred embodiment of the present invention, perforation forms with the inductively coupled plasma ion(ic) etching.
In a preferred embodiment of the present invention, the step that forms perforation comprises that more defining a photoresist layer with photoetching making technology is covered on second ohmic contact layer and the epitaxial loayer; And the epitaxial loayer that do not covered by the photoresist layer of etching, define a n type platform and a p-type platform thus and expose first ohmic contact layer.
In a preferred embodiment of the present invention, behind the etching part epitaxial loayer, expose a gallium phosphide layer of epitaxial loayer.
In a preferred embodiment of the present invention, conductive layer forms with electroless plating method.
For reaching above-mentioned purpose, comprise an epitaxial loayer, one first ohmic contact layer, a knitting layer, a bonding substrate, a conductive layer, one first electrode, one second ohmic contact layer and one second electrode according to a kind of light-emitting diode of the present invention.Epitaxial loayer has one first relative side surface and one second side surface, and epitaxial loayer has a perforation.First ohmic contact layer is arranged on second side surface of epitaxial loayer.Knitting layer is arranged on second side surface of epitaxial loayer, and coats first ohmic contact layer.The bonding substrate is engaged on second side surface of first ohmic contact layer and epitaxial loayer by knitting layer.Conductive layer is filled in a part of degree of depth of perforation, and is electrically connected with first ohmic contact layer.First electrode is arranged on the epitaxial loayer, and first electrode is electrically connected first ohmic contact layer via conductive layer.Second ohmic contact layer is arranged at epitaxial loayer.Second electrode is arranged on the epitaxial loayer, and is electrically connected second ohmic contact layer.
In a preferred embodiment of the present invention, epitaxial loayer comprises composite bed and a gallium phosphide layer of a gallium arsenide layer, a phosphorus indium gallium aluminium.
In a preferred embodiment of the present invention, first ohmic contact layer is the metal composite layer of one gold medal/beryllium/gold or one gold medal/beryllium gold/gold.
In a preferred embodiment of the present invention, conductive layer forms a conductive pole to fill up the partial depth of perforation in perforation.
In a preferred embodiment of the present invention, the thickness of conductive pole is 4～6 μ m.
In a preferred embodiment of the present invention, the material of second ohmic contact layer comprises germanium billon (GeAu).The material of conductive layer comprises gold, silver or copper.
From the above, the present invention makes light-emitting diode and manufacture method thereof, forms conductive layer in perforation by electroless plating method, to reduce the depth-to-width ratio of perforation.Thus, can overcome in the prior art, utilize the sidewall thickness of electron gun evaporation conductive layer in perforation thinner and influence the problem of reliability.In addition, the electroless-plating manufacture craft is also comparatively cheap, so also can save the manufacture craft cost.
Description of drawings
Figure 1A and Figure 1B are existing LED manufacture craft schematic diagram with Improvement type horizontal electrode of aluminum oxide substrate;
Fig. 2 makes the method flow diagram of light-emitting diode for the present invention; And
Fig. 3 A to Fig. 3 J makes method flow diagram and the schematic diagram of light-emitting diode for the present invention.
The main element symbol description
1:LED 11: epitaxial loayer
12: grafting material 13: the bonding substrate
14:p type ohmic contact layer 15:n type ohmic contact layer
16: perforate 161: metal level
171,172: electrode 2: light-emitting diode
202: the second electrodes of 201: the first electrodes
21: epitaxial substrate 22: epitaxial loayer
221: InGaP layer 222: gallium arsenide layer
223: AlGaInP layer 224: the gallium phosphide layer
25: 26: the second ohmic contact layers of bonding substrate
271,272,273: perforation 281,282: photoresist layer
29: conductive layer 31: separator
P: photoresist P1:n type platform
P2:p type platform S01～S09: step
Embodiment
Hereinafter with reference to relevant drawings, a kind of light-emitting diode and manufacture method thereof according to preferred embodiment of the present invention are described, wherein components identical will be illustrated with identical reference marks.
Notice, the structure that the appended accompanying drawing of this specification illustrates, ratio, size etc., equal contents in order to cooperate specification to disclose only, understanding and reading for person skilled in the art scholar, be not in order to limit the enforceable qualifications of the present invention, so technical essential meaning of tool not, the adjustment of the modification of any structure, the change of proportionate relationship or size, not influencing under the effect that the present invention can produce and the purpose that can reach, all should still drop on disclosed technology contents and get in the scope that can contain.Simultaneously, quote in this specification as " on ", D score, " top ", " side " reach the term of " " etc., also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the present invention, the change of its relativeness or adjustment, under no essence change technology contents, when also being considered as the enforceable category of the present invention.
See also Fig. 2, Fig. 3 A to Fig. 3 J, make method flow diagram and the schematic diagram of light-emitting diode for the present invention.The manufacture method of light-emitting diode comprises following steps: step S01 provides an epitaxial substrate; Step S02 forms an epitaxial loayer on epitaxial substrate, and epitaxial loayer has one first relative side surface and one second side surface, wherein a surface engagement of first side surface and epitaxial substrate; Step S03 forms one first ohmic contact layer on second side surface of epitaxial loayer; Step S04 forms a knitting layer on first ohmic contact layer, by a knitting layer one bonding substrate is engaged on first ohmic contact layer; Step S05 removes epitaxial substrate; Step S06 forms one second ohmic contact layer on first side surface of epitaxial loayer, and wherein first ohmic contact layer and second ohmic contact layer are positioned at the opposite side of epitaxial loayer; Step S07 forms a perforation that exposes first ohmic contact layer.In more detail, form the perforation that runs through epitaxial loayer by first side surface of epitaxial loayer, and expose first ohmic contact layer; Step S08 forms a conductive layer in perforation, and is electrically connected with first ohmic contact layer; And step S09 forms one first electrode and one second electrode on epitaxial loayer, and first electrode is electrically connected first ohmic contact layer via conductive layer, and second electrode is electrically connected with second ohmic contact layer.
Please in step S01 and S02, provide an epitaxial substrate 21 simultaneously with reference to shown in Fig. 2 and Fig. 3 A, and on epitaxial substrate 21, form an epitaxial loayer 22.Wherein, the material of epitaxial substrate 21 is example with the GaAs, and epitaxial substrate 21 can also be materials such as carborundum, aluminium oxide, gallium nitride, glass, quartz or gallium phosphide certainly.Epitaxial loayer 22 is a composite bed, the main epitaxy method that forms epitaxial loayer 22 has liquid phase epitaxial method (Liquid Phase Epitaxy, LPE), vapour phase epitaxy method (Vapor Phase Epitaxy, VPE) and the Metalorganic chemical vapor deposition method (Metal-Organic Chemical Vapor Deposition, MOCVD).In addition, material energy gap with epitaxial loayer 22, III family commonly used-group is formed big to being divided into four classes, be respectively GaP/GaAsP series, AlGaAs series, AlGaInP series and GaN series, comprise an InGaP (InGaP) layer 221 in this epitaxial loayer 22, one GaAs (GaAs) layer 222, one AlGaInP (AlGaInP) layer, 223 and one gallium phosphide layer 224, and deposit in regular turn with the organometallic chemistry gas phase that to be formed on the epitaxial substrate 21 be example, wherein epitaxial loayer 22 has one first relative side surface and one second side surface, and wherein first side surface of epitaxial loayer 22 combines with a surface of epitaxial substrate 21.Epitaxial loayer 22 structures of present embodiment are from epitaxial substrate 21 up to be the InGaP layer 221 of an etch stop layer (stop layer), the gallium arsenide layer 222 of semiconductor contact layer (n-contact layer), the AlGaInP layer 223 of an epitaxial structure and the gallium phosphide layer 224 of a window layer (window layer) in regular turn.The epitaxial loayer 22 of present embodiment is example to have above-mentioned four layers, and so it is non-limiting.Wherein, the AlGaInP layer 223 of epitaxial structure is composite bed, and it comprises a n type coating layer (n-cladding), a quantum well layer (quantum well) and a p-type coating layer (p-cladding).Wherein, the AlGaInP layer 223 of epitaxial structure is the main luminous epitaxial structure of four-element LED, and in addition, the gallium phosphide layer 224 of window layer is mainly used to reduce resistance value and increases the light ejaculation.
In step S03, form first ohmic contact layer 23 on second side surface of epitaxial loayer 22, wherein, first ohmic contact layer 23 is a metal composite layer, comprises to be gold/beryllium/gold or the metallic composite of gold/beryllium gold/gold in regular turn.In addition, first ohmic contact layer 23 is the p-type ohmic contact layer, with as a p-type electrode.
Shown in Fig. 3 B, in step S04, by knitting layer 24 a bonding substrate 25 is engaged on first ohmic contact layer 23, that is bonding substrate 25 is engaged on second side surface of epitaxial loayer 22.Be noted that, bonding substrate 25 be engaged in first ohmic contact layer 23 " on ", refer to directly contact first ohmic contact layers 23 or be linked on first ohmic contact layer 23 across other layers of bonding substrate 25.In this, knitting layer 24 and is linked on the bonding substrate 25 epitaxial loayer 22 between epitaxial loayer 22 and bonding substrate 25.In the present embodiment, knitting layer 24 be for example organic photoresist layer material (for example: polyimides, polyimide) or be metal material, so that adherence to be provided, bonding substrate 25 then is example with the sapphire substrate, and the material of bonding substrate 25 can also be carborundum, gallium nitride, glass, quartz or gallium phosphide etc. certainly.Follow-up, bonding substrate 25 is formed on the knitting layer 24 in the hot pressing mode.
Shown in Fig. 3 C, in step S05, be engaged in bonding substrate 25 on first ohmic contact layer 23 after, carry out removing of epitaxial substrate 21.The epitaxial loayer 22 that the method that removes epitaxial substrate 21 can be used chemical etching to remove or utilize laser to focus on to be connected with epitaxial substrate 21 makes epitaxial substrate 21 and epitaxial loayer 22 peel off (lift-off).In present embodiment, utilize the epitaxial substrate 21 that liquid medicine is removed GaAs that mixes of ammoniacal liquor and hydrogen peroxide, and then with the InGaP layer 221 that mix liquid medicine removal etch stop layer of phosphoric acid with hydrochloric acid, and expose the gallium arsenide layer 222 of semiconductor contact layer.
Shown in Fig. 3 D, it is with the structure upset of Fig. 3 C, to carry out the schematic diagram of follow-up manufacture craft.After step S05 removes the InGaP layer 221 of epitaxial substrate 21 and etch stop layer, in step S06, with photoetching, deposit and float off manufacture craft second ohmic contact layer 26 is formed on first side surface of epitaxial loayer 22.Wherein, after finishing the figure of second ohmic contact layer 26, being mask with second ohmic contact layer, 26 figures carries out etching to the gallium arsenide layer 222 of semiconductor contact layer, with gallium arsenide layer 222 patternings with semiconductor contact layer, form and the identical figure of second ohmic contact layer 26 with the gallium arsenide layer 222 in semiconductor contact layer.Second ohmic contact layer 26 is example with n type ohmic contact layer, and its material comprises for example germanium billon (GeAu).
Shown in Fig. 3 E, in step S07, utilize photoetching making technology, forming perforation 271, and 271 the degree of depth of boring a hole need expose first ohmic contact layer 23.That is form the perforation 271 that runs through epitaxial loayer 22 by first side surface of epitaxial loayer 22, and 271 the position of boring a hole needs arrange with respect to first ohmic contact layer 23 on epitaxial loayer 22 second side surfaces.In the present embodiment, the step that perforation 271 forms forms a photoresist layer 281 on second ohmic contact layer 26 and epitaxial loayer 22, in order to cover and to protect second ohmic contact layer 26 and epitaxial loayer 22; Utilize photoetching making technology to define the position of perforation 271, epitaxial loayer 22 zones that do not covered by photoresist layer 281 with the etching process etching expose the perforation 271 of first ohmic contact layer 23 with formation again.In this, etching and punching 271 is in the mode of for example inductively coupled plasma (ICP).And, by the etched step of inductively coupled plasma, can also define a n type platform (n-mesa) and a p-type platform (p-mesa) in the lump, that is the land regions of definition n type electrode and the land regions of p-type electrode.
In addition, the formation perforation 271 shown in Fig. 3 E is not the formation program that only is confined to an above-mentioned photoetching making technology, can finish perforation by etching process repeatedly yet.For example, shown in Fig. 3 F and Fig. 3 G, can define a photoresist layer 281 with photoetching making technology earlier in Fig. 3 F covers on second ohmic contact layer 26 and the epitaxial loayer 22, photoresist layer 281 can define n type platform and p-type land regions and perforation 272 positions, then the epitaxial loayer 22 that is not covered by photoresist layer 281 with the inductively coupled plasma etching again is to define a n type platform P1 and a p-type platform P2(shown in Fig. 3 J), that is define the land regions of n type electrode and the land regions of p-type electrode; Behind the etching part epitaxial loayer 22, form perforation 272 with the gallium phosphide layer 224 that exposes in the epitaxial loayer 22 simultaneously.Then, remove the photoresist layer 281 that is covered on second ohmic contact layer 26 and the epitaxial loayer 22, and after being coated with a photoresist layer 282 again and defining the figure of follow-up required perforation 273 with photoetching making technology, etching is covered in the epitaxial loayer 22 on first ohmic contact layer 23, forms the perforation 273 that runs through whole epitaxial loayer 22 and exposed portions serve first ohmic contact layer 23.
Shown in Fig. 3 H, in step S08, form above-mentioned perforation 273 after, in perforation 273, form a conductive layer 29 in electroless-plating (Electroless Plating) mode, to be electrically connected with first ohmic contact layer 23.Conductive layer 29 begins deposition by first ohmic contact layer, 23 surfaces, and in perforation 273, form a conductive pole to fill up the partial depth of perforation 273, usually wish that conductive pole thickness can be wished approximately and gallium phosphide layer 224 is contour, and the thickness of gallium phosphide layer 224 is about 4～6 μ m usually, so partial depth preferably is about 4～6 μ m, that is the thickness of conductive layer 29 formed conductive poles is about 4～6 μ m.So conductive layer 29 fills up the partial depth of perforation 273 in the present invention, conductive layer 29 gradually grows up along with electroplating manufacture craft, can reduce the depth-to-width ratio of perforation 271,272,273, so do not exist as in the prior art when having the electron gun evaporation of directivity, cause is in the metal layer thickness deficiency of perforated side wall, and influences the situation of the reliability of product.
Wherein, the material of the conductive layer 29 of present embodiment comprises for example conducting metal such as gold, silver or copper.And electroless-plating is a kind of electrochemical method of deposit film metal level, need not under the situation of applied voltage exactly, and the solution metal ion by autocatalytic chemical reaction mode, is deposited on the surface of solids.This response procedures is very similar with plating, when different is the reaction generation, the electronics transmission is not via outer lead, but utilization and metal ion and be present in reducing agent in the plating bath jointly, on the surface of solids, metal ion is reduced into solid metallic by chemical reaction, and layer by layer deposition is on the surface of solids.Because this redox reaction only takes place at the solid state surface with active material, so the execution of electroless-plating can't or deny factor such as conduction and being restricted because of surface configuration, the size of plating piece.
In this, the electroplate liquid CG-871 that the operating condition of electroless-plating for example can use the Hong Ze electron institute to produce, and at 100ml/L KAu(CN) 2,1.0g/L(0.8-2.5g/L), 85 ~ 90 ℃ of temperature, time carry out carrying out in 3 ~ 15 minutes electroless-plating, also can require according to the deposit thickness of actual fabrication technology set certainly.
Shown in Fig. 3 I, be the cutaway view along A-A line segment among Fig. 3 J.In step S09, form after the above-mentioned conductive layer 29, remove photoresist layer 282, and on epitaxial loayer 22, form first electrode 201 and second electrode 202, first electrode 201 is electrically connected first ohmic contact layer, 23, the second electrodes 202 via conductive layer 29 and is electrically connected with second ohmic contact layer 26.Wherein, the material of first electrode 201 and second electrode 202 comprises chromium/platinum/gold in regular turn.First electrode 201 and second electrode 202 for example form in the mode of electron gun evaporation.The thickness of first electrode 201 and second electrode 202 is 4 to 6 μ m.
In addition; for protecting above-mentioned light-emitting diode structure; the method for manufacturing light-emitting of present embodiment can more comprise: form a separator 31 covering epitaxial loayer 22 and second ohmic contact layer 26, but expose first electrode 201 and second electrode 202 as be electrically connected usefulness with external power source.The material of separator 31 can for example be silica or silicon nitride.
Please refer to shown in Fig. 3 H, the present invention also provides a kind of light-emitting diode, and light-emitting diode 2 comprises an epitaxial loayer 22, one first ohmic contact layer 23, a knitting layer 24, a bonding substrate 25, a conductive layer 29, one first electrode 201, one second ohmic contact layer 26 and one second electrode 202.Epitaxial loayer 22 has one first relative side surface and one second side surface, and epitaxial loayer 22 has a perforation 273.First ohmic contact layer 23 is arranged on second side surface of epitaxial loayer 22.Knitting layer 24 is arranged on second side surface of epitaxial loayer 22, and coats first ohmic contact layer 23.Conductive layer 29 is filled at a part of degree of depth of perforation 273, and is electrically connected with first ohmic contact layer 23.
In sum, the present invention makes light-emitting diode and manufacture method thereof, form conductive layer in perforation by electroless plating method, can overcome in the prior art, utilize electron gun evaporation conductive layer in perforation, may produce the too thick or too thin problem of conductive layer thickness, therefore, can be used for saving the manufacture craft cost and overcome the problem that lead connects reliability.Therefore, make the method for light-emitting diode by the present invention, utilize electroless plating method to form conductive layer in perforation, can be guaranteed that conductive layer is formed at the thickness in the perforation and obtains better reliability degree.
The above only is illustrative, but not is restricted person.Anyly do not break away from spirit of the present invention and category, and to its equivalent modifications of carrying out or change, all should be contained in the accompanying Claim.
Claims (18)
1. the manufacture method of a light-emitting diode comprises step:
One epitaxial substrate is provided;
Form an epitaxial loayer on this epitaxial substrate, this epitaxial loayer has the first relative side surface and second side surface, wherein a surface engagement of this first side surface and this epitaxial substrate;
Form one first ohmic contact layer on this second side surface on this epitaxial loayer;
Form a knitting layer on this first ohmic contact layer, by this knitting layer one bonding substrate is engaged on this first ohmic contact layer;
Remove this epitaxial substrate;
Form one second ohmic contact layer on this first side surface of this epitaxial loayer;
Form a perforation that exposes this first ohmic contact layer;
Form a conductive layer in this perforation, and be electrically connected with this first ohmic contact layer; And
Form one first electrode and one second electrode on this epitaxial loayer, this first electrode is electrically connected this first ohmic contact layer via this conductive layer, and this second electrode is electrically connected with this second ohmic contact layer.
2. manufacture method as claimed in claim 1 also comprises:
Form a separator and cover this epitaxial loayer and this second ohmic contact layer, but expose this first electrode and this second electrode.
3. manufacture method as claimed in claim 1, wherein this epitaxial substrate is GaAs substrate or nitride substrate.
4. manufacture method as claimed in claim 1, wherein this epitaxial loayer is formed at this epitaxial substrate with Metalorganic chemical vapor deposition.
5. manufacture method as claimed in claim 1, wherein this first ohmic contact layer is the p-type ohmic contact layer, this second ohmic contact layer is n type ohmic contact layer.
6. manufacture method as claimed in claim 1 wherein should form with the inductively coupled plasma ion(ic) etching in perforation.
7. manufacture method as claimed in claim 1, the step that wherein forms this perforation also comprises:
Defining a photoresist layer with photoetching making technology is covered on this second ohmic contact layer and this epitaxial loayer; And
This epitaxial loayer that etching is not covered by this photoresist layer defines a n type platform, a p-type platform thus and exposes this first ohmic contact layer.
8. manufacture method as claimed in claim 7 wherein behind this epitaxial loayer of etching part, is exposed a gallium phosphide layer of this epitaxial loayer.
9. manufacture method as claimed in claim 1, wherein this conductive layer forms with electroless plating method.
10. manufacture method as claimed in claim 1, wherein this knitting layer is a photo anti-corrosion agent material, and this bonding substrate is formed on this photoresist layer with hot pressing.
11. a light-emitting diode comprises:
Epitaxial loayer has the first relative side surface and this epitaxial loayer of second side surface has a perforation;
First ohmic contact layer is arranged on this second side surface of this epitaxial loayer;
Knitting layer is arranged on this second side surface of this epitaxial loayer, and coats this first ohmic contact layer;
The bonding substrate, it is engaged on this second side surface of this first ohmic contact layer and this epitaxial loayer by this knitting layer;
Conductive layer is filled in a part of degree of depth of this perforation, and is electrically connected with this first ohmic contact layer;
First electrode is arranged on this epitaxial loayer, and this first electrode is electrically connected this first ohmic contact layer via this conductive layer;
Second ohmic contact layer is arranged at this epitaxial loayer; And
Second electrode is arranged on this epitaxial loayer, and is electrically connected this second ohmic contact layer.
12. light-emitting diode as claimed in claim 11, wherein this epitaxial loayer comprises composite bed and the gallium phosphide layer of gallium arsenide layer, phosphorus indium gallium aluminium.
13. light-emitting diode as claimed in claim 11, wherein this first ohmic contact layer is the metal composite layer of one gold medal/beryllium/gold or one gold medal/beryllium gold/gold.
14. light-emitting diode as claimed in claim 11, wherein this conductive layer forms a conductive pole to fill up the partial depth of this perforation in this perforation, reduces the depth-to-width ratio of this perforation.
15. light-emitting diode as claimed in claim 14, wherein the thickness of this conductive pole is 4～6 μ m.
16. light-emitting diode as claimed in claim 11, wherein the material of this second ohmic contact layer comprises the germanium billon.
17. light-emitting diode as claimed in claim 11, wherein the material of this conductive layer comprises gold, silver or copper.
18. light-emitting diode as claimed in claim 11, wherein the material of this first electrode and this second electrode comprises chromium/platinum/gold in regular turn, and the thickness of this first electrode and this second electrode is 4 to 6 μ m.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101110234A TW201340396A (en) | 2012-03-23 | 2012-03-23 | Light emitting diode and manufacturing method thereof |
| TW101110234 | 2012-03-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103325891A true CN103325891A (en) | 2013-09-25 |
Family
ID=49194537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101808825A Pending CN103325891A (en) | 2012-03-23 | 2012-06-04 | Light emitting diode element and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103325891A (en) |
| TW (1) | TW201340396A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009099675A (en) * | 2007-10-15 | 2009-05-07 | Showa Denko Kk | Method of manufacturing light emitting diode, light emitting diode, and lamp |
| CN101681877A (en) * | 2009-04-01 | 2010-03-24 | 香港应用科技研究院有限公司 | Light emitting diode with vertical structure |
| US20110079805A1 (en) * | 2009-10-02 | 2011-04-07 | Yu Kuohui | Light-emitting diode and method for manufacturing the same |
| US20110272729A1 (en) * | 2010-05-06 | 2011-11-10 | Epworks Co., Ltd. | Wafer level led interposer |
| TW201210074A (en) * | 2010-08-20 | 2012-03-01 | Chi Mei Lighting Tech Corp | Light-emitting diode structure and method for manufacturing the same |
| US20120056152A1 (en) * | 2010-09-07 | 2012-03-08 | Chi Mei Lighting Technology Corporation | Light emitting devices |
-
2012
- 2012-03-23 TW TW101110234A patent/TW201340396A/en unknown
- 2012-06-04 CN CN2012101808825A patent/CN103325891A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009099675A (en) * | 2007-10-15 | 2009-05-07 | Showa Denko Kk | Method of manufacturing light emitting diode, light emitting diode, and lamp |
| CN101681877A (en) * | 2009-04-01 | 2010-03-24 | 香港应用科技研究院有限公司 | Light emitting diode with vertical structure |
| US20110079805A1 (en) * | 2009-10-02 | 2011-04-07 | Yu Kuohui | Light-emitting diode and method for manufacturing the same |
| US20110272729A1 (en) * | 2010-05-06 | 2011-11-10 | Epworks Co., Ltd. | Wafer level led interposer |
| TW201210074A (en) * | 2010-08-20 | 2012-03-01 | Chi Mei Lighting Tech Corp | Light-emitting diode structure and method for manufacturing the same |
| US20120056152A1 (en) * | 2010-09-07 | 2012-03-08 | Chi Mei Lighting Technology Corporation | Light emitting devices |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201340396A (en) | 2013-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI688121B (en) | Light emitting diode structure | |
| CN107112394A (en) | Light emitting diode and the light emitting diode matrix including light emitting diode | |
| US10573784B2 (en) | Micro light emitting diode structure and method for manufacturing micro light emitting diode | |
| CN102694085B (en) | Method for producing group iii nitride semiconductor light emitting element | |
| CN102916091A (en) | Method for manufacturing light emitting diode | |
| CN113257959B (en) | Preparation method of micro light-emitting diode chip, micro light-emitting diode chip and display module | |
| US9461211B2 (en) | Method for producing a connection region of an optoelectronic semiconductor chip | |
| CN101740674B (en) | Light-emitting element structure and manufacturing method thereof | |
| CN101834240B (en) | Light-emitting diode with high-reflectivity contact electrode and manufacturing method thereof | |
| CN110476259A (en) | For manufacturing the method and opto-electronic device of opto-electronic device | |
| CN104733577A (en) | LED chip of perpendicular structure and manufacturing method thereof | |
| EP2605294B1 (en) | Semiconductor light emitting device | |
| CN104795481A (en) | Light emitting diode and manufacturing method thereof | |
| CN102201508B (en) | Light emitting diode chip and fabrication method thereof | |
| CN114759136B (en) | MiniLED chip and manufacturing method thereof | |
| CN110828625A (en) | Flip chip and manufacturing method thereof | |
| CN100511731C (en) | Method for preparing flip chip bonding light emitting diode chip | |
| CN103219433A (en) | Light emitting diode and manufacturing method thereof | |
| CN103325891A (en) | Light emitting diode element and manufacturing method thereof | |
| CN103325911A (en) | Light emitting diode element and manufacturing method thereof | |
| CN106784223B (en) | Light emitting diode and preparation method thereof | |
| CN104103729A (en) | Light emitting diode and manufacturing method thereof | |
| CN206650101U (en) | A kind of LED chip and automobile lamp | |
| CN106784185A (en) | Light emitting diode and preparation method thereof | |
| CN112992884A (en) | Display module, manufacturing method thereof and electronic equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130925 |