CN103325645B - A kind of diamond for travelling-wave tube-electro-coppering combined type supporting rod and manufacture method thereof - Google Patents
A kind of diamond for travelling-wave tube-electro-coppering combined type supporting rod and manufacture method thereof Download PDFInfo
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- CN103325645B CN103325645B CN201310243953.6A CN201310243953A CN103325645B CN 103325645 B CN103325645 B CN 103325645B CN 201310243953 A CN201310243953 A CN 201310243953A CN 103325645 B CN103325645 B CN 103325645B
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Abstract
A kind of diamond electroplating copper combined type supporting rod for travelling-wave tube and manufacture method thereof, belong to vacuum electron device field.Diamond electroplating copper combined type supporting rod is parts in travelling-wave tube high-frequency structure, diamond and electro-coppering substrate by synthetic are constituted, the method of this parts manufacture is: first, nucleation of diamond is formed at silicon substrate surface, and use one layer of diamond of chemical gaseous phase depositing process synthetic, silicon is eroded, grind and two surfaces of polishing diamond, then splash-proofing sputtering metal layer on a face of diamond, place silver-copper brazing alloy and carry out brazing operation in a vacuum furnace, again at its electroplating surface copper, finally become diamond copper combined type supporting rod by Laser cutting.
Description
Technical field
The invention belongs to vacuum electron device field, be specifically related to a kind of Buddha's warrior attendant for travelling-wave tube
Stone-electro-coppering combined type supporting rod and manufacture method thereof.
Background technology
Travelling-wave tube has a wide range of applications in fields such as satellite communications.And supporting rod is helix row
The indispensable parts of wave duct, and always affect the critical component of device performance index.For
For many travelling-wave tubies, particularly broad-band TWT, limit the main of its power output capacity
Factor is the heat-sinking capability of high frequency slow wave system, i.e. the heat-sinking capability of helix supporting rod.Output
The operating temperature of section spiral line, affects the service behaviour of pipe, life and reliability.Along with frequency
The raising of rate, especially into millimere-wave band, the power capacity of CW TWT drastically declines.
This is because frequency is the highest, the electron beam channel of travelling-wave tube and the size of high-frequency structure are the least, and
High-frequency loss is with the increase of frequency exponentially formula.In general, the power of CW TWT holds
Measure the ratio increased square with frequency to decline.So the grinding of helix supporting construction heat-sinking capability
Study carefully, always improve the Main way of travelling-wave tube output capacity.And rise and support and insulation work
The performance of medium supporting rod be a key factor.
Microwave current vacuum electron device can dielectric material mainly have vitreous silica, oxidation
Aluminum, boron nitride, aluminium nitride and beryllium oxide etc..But all there is different shortcomings in above-mentioned material.Mesh
Before, the most frequently used material of helix supporting rod is beryllium oxide, and it has of a relatively high thermal conductivity
With relatively low dielectric constant.But, beryllium oxide is difficult to meet the requirement of millimeter wave traveling wave tube,
Not to mention short millimeter wave travelling-wave tube.Additionally, beryllium oxide has severe toxicity under pulverulence, it makes
With being the most gradually eliminated.It can be seen that the most also do not have a kind of material to fully meet
The requirement of millimeter wave traveling wave tube supporting rod.
Artificially synthesizing diamond not only has the highest thermal conductivity and minimum in known material
Microwave-medium loss, and relative dielectric constant only has 5.5.It is reported, as used Buddha's warrior attendant
Stone supporting rod, it is contemplated that millimeter wave helix structure maximum power ratio use beryllium oxide supporting rod
The maximum power capabilities high twice of helix many.So, diamond will tool as dielectric material
There are many advantages, are preferable travelling-wave tube supporting rod material.But, use synthetic
Diamond makes supporting rod and there is problems with.First, as the cost of diamond of supporting rod
The highest.Secondly, the intensity of very thin diamond supporting rod is relatively poor, and assembly difficulty is relatively
Greatly, all the more so for short millimeter wave.It addition, between diamond and helix and shell
Thermal contact resistance is bigger than normal.To problems above, the patent (201210332591.3) in application
Devise a kind of diamond for travelling-wave tube-metal composite formula supporting rod, diamond film is raw
Long on certain thickness metal substrate, shorten the growth time of diamond, and enhance folder
Hold the intensity of bar.The present invention has continued the theory of this application Patent, i.e. shortens the life of diamond
For a long time, increase the intensity of supporting rod, again the patent in this application improved and change simultaneously
Enter.Above-mentioned application Patent has following deficiency, first, the diamond film stress of growth on metal
Relatively big, need to do transition zone.Secondly, direct growth can not remove the forming core that quality is relatively poor
Face thin layer.It addition, can not direct growth diamond on the high copper of thermal conductivity.The present invention is
Make on the basis of having and being efficiently modified, redesigned the combined type of a kind of diamond-electro-coppering
Supporting rod, it is intended to overcome above deficiency, is used as substrate by electroplating technology by copper high for thermal conductivity,
Improve the radiating efficiency of compound supporting rod further.
Summary of the invention
It is an object of the invention to by design and manufacture a kind of diamond-plating for travelling-wave tube
Copper combined type supporting rod, is effectively improved travelling-wave tube, particularly millimeter wave and short millimeter wave travelling-wave tube
The radiating efficiency of helix, thus improve output and the aggregate efficiency of travelling-wave tube.
In order to realize the purpose of the present invention, the technical scheme used is as follows, a kind of for row ripple
The diamond of pipe-electro-coppering combined type supporting rod, be placed in high frequency slow wave line and tube shell of traveling wave tube it
Between, it is characterised in that this combined type supporting rod is by the diamond square-section cylinder of surface finish
Parallel with comparable size electro-coppering substrate square-section cylinder connect as one, said two rectangle
Containing metal layer and silver-copper brazing alloy layer between sectional cylinder；A kind of by diamond described above
The manufacture method of-electro-coppering combined type supporting rod, it is characterised in that enter by below scheme step
Row operation:
A. carrying out mechanically polishing forming core on the silicon chip of diameter 60mm, density is 1x108~
1x109cm-2;
B. inserting microwave plasma chemical gas phase plant, carry out diamond film, growth technique is joined
Number is: microwave power 2.6KW, CH4/H2 mass flow ratio 1/300sccm, air pressure 110
Torr, 900 ° of C of substrate temperature；
C. after removing silicon, the two-sided of diamond is ground and polishes, surface roughness≤20nm；
D. splash-proofing sputtering metal layer: 30nm Ti, 100nm Mo and 1um Ni;
E. on metal layer, place silver-copper brazing alloy, put into and vacuum drying oven carries out brazing operation: heating
To 830 ° of C, it is incubated 10 seconds；
F. electro-coppering on silver-copper brazing alloy, thickness is 0.3mm；
G. utilize laser cutting device, the diamond of electro-coppering is processed into combined type by design requirement
Supporting rod.
Supporting rod is a vitals between tube shell of traveling wave tube and helix, it is common that by leading
The dielectric material that heating rate is high, lossy microwave is little is processed into.High-frequency loss produces in helix
Heat, mainly be transmitted on shell distribute by supporting rod, to reduce helix
Operating temperature.As it has been described above, diamond is a kind of preferably supporting rod material, but manufacturing cost
Height, the very thin diamond supporting rod after processing easily loses, and insufficient strength is high.It is contemplated that pin
To problem above, redesign the folder that a kind of diamond-electro-coppering for travelling-wave tube is compound
Hold bar.Different, in the present invention from the patent (201210332591.3) in earlier application
Diamond grows on a silicon substrate initially with MPCVD method.
Then, erosion removal substrate silicon.Then diamond is carried out twin polishing, so can remove
The forming core face thin layer that quality is relatively poor.Splash-proofing sputtering metal layer on a face of diamond, puts again
Put silver-copper brazing alloy and carry out brazing operation in a vacuum furnace.Next step is in its electroplating surface substrate
Copper, and reach required gross thickness.Finally become diamond-electro-coppering by Laser cutting
Combined type supporting rod.
Fig. 1 illustrates the structural representation of diamond-electro-coppering combined type supporting rod.1 surface is thrown
The diamond of light, 2 metal layers, 3. silver-copper brazing alloy, 4. electro-coppering substrate.
The invention has the beneficial effects as follows, the time of growth diamond shortens dramatically, and reduces cost,
The intensity of supporting rod increases, and thermal conductivity at the bottom of cuprio is higher than any metal material and beryllium oxide, row ripple
The output of pipe and efficiency are than using beryllium oxide supporting rod to be improved.
Accompanying drawing explanation
Fig. 1 is the combined type supporting rod schematic diagram of a diamond-electro-coppering；
Fig. 2 is the section signal after diamond-electro-coppering combined type supporting rod loads travelling-wave tube
Figure；
Fig. 3 is the manufacturing flow chart of the combined type supporting rod of diamond-electro-coppering
Detailed description of the invention
With reference to Fig. 1, represent a simplest rectangular cross section diamond-electro-coppering combined type folder
Hold the schematic diagram of bar.In figure, 1 is the diamond of surface finish, and 2 is that metal layer 3 is for silver-colored
Spelter solder, 4 is electro-coppering substrate.
As the actual example application for a kind of travelling-wave tube, the combined type of diamond-electro-coppering
The length of supporting rod is 47mm, high 0.5mm, wide 0.2mm, and the thickness of diamond is 0.2mm;Cuprio
Base thickness degree is 0.3mm.
With reference to Fig. 2, represent breaking after diamond-electro-coppering combined type supporting rod loading travelling-wave tube
Face schematic diagram.In figure, 2-1 is travelling tube helical line, and 2-2 is combined type supporting rod, Buddha's warrior attendant
Stone one end contacts with helix, and 2-3 is tube shell of traveling wave tube.
With reference to Fig. 3, represent the manufacturing flow chart of the combined type supporting rod of diamond-electro-coppering,
Figure represents and follows the steps below operation:
A. carrying out mechanically polishing forming core on the silicon chip of diameter 60mm, density is 1x108~
1x109cm-2;
B. inserting microwave plasma chemical gas phase plant, carry out diamond film, growth technique is joined
Number is: microwave power 2.6KW, CH4/H2 mass flow ratio 1/300sccm, air pressure 110
Torr, 900 ° of C of substrate temperature；
C. after removing silicon, the two-sided of diamond is ground and polishes, surface roughness≤20nm；
D. splash-proofing sputtering metal layer: 30nm Ti, 100nm Mo and 1um Ni;
E. on metal layer, place silver-copper brazing alloy, put into and vacuum drying oven carries out brazing operation: heating
To 830 ° of C, it is incubated 10 seconds；
F. electro-coppering on silver-copper brazing alloy, thickness is 0.3mm；
G. utilize laser cutting device, the diamond of electro-coppering is processed into combined type by design requirement
Supporting rod.
Claims (1)
1. the manufacture method for the diamond-electro-coppering combined type supporting rod of travelling-wave tube, described combined type supporting rod is placed between high frequency slow wave line and tube shell of traveling wave tube, connected as one by the diamond square-section cylinder of surface finish is parallel with comparable size electro-coppering substrate square-section cylinder, containing metal layer and silver-copper brazing alloy layer between the cylinder of said two square-section, it is characterized in that, described method is operated by below scheme step:
A. carrying out mechanically polishing forming core on the silicon chip of diameter 60mm, density is 1x108～1x109cm-2；
B. inserting microwave plasma chemical gas phase plant, carry out diamond film, growthing process parameter is: microwave power 2.6KW, CH4/H2Mass flow ratio 1/300, air pressure 110 torr, substrate temperature 900 DEG C；
C. after removing silicon chip, the two-sided of diamond is ground and polishes, surface roughness≤20nm；
D. splash-proofing sputtering metal layer: 30nm Ti, 100nm Mo and 1um Ni；
E. on metal layer, place silver-copper brazing alloy, put into and vacuum drying oven carries out brazing operation: be heated to 830 DEG C, be incubated 10 seconds；
F. electro-coppering on silver-copper brazing alloy, thickness is 0.3mm；
G. utilize laser cutting device, the diamond of electro-coppering is processed into combined type supporting rod by design requirement.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310243953.6A CN103325645B (en) | 2013-06-19 | 2013-06-19 | A kind of diamond for travelling-wave tube-electro-coppering combined type supporting rod and manufacture method thereof |
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| CN201310243953.6A CN103325645B (en) | 2013-06-19 | 2013-06-19 | A kind of diamond for travelling-wave tube-electro-coppering combined type supporting rod and manufacture method thereof |
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| CN103325645B true CN103325645B (en) | 2016-12-28 |
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Families Citing this family (5)
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| CN103659566B (en) * | 2013-12-06 | 2015-10-28 | 南京三乐电子信息产业集团有限公司 | A kind of conical helix assembling processing method of elongated low-angle supporting rod |
| CN105977120B (en) * | 2016-07-14 | 2018-01-02 | 中国电子科技集团公司第十二研究所 | A kind of manufacture method of high heat conduction helical line slow-wave structure |
| CN106158562B (en) * | 2016-08-26 | 2018-01-02 | 中国电子科技集团公司第十二研究所 | A kind of slow-wave structure of helix TWT and the preparation method of the slow-wave structure |
| CN110690089B (en) * | 2019-10-25 | 2021-12-03 | 苏师大半导体材料与设备研究院(邳州)有限公司 | Rectangular helix slow wave structure for traveling wave tube |
| CN114864360B (en) * | 2022-05-17 | 2023-06-09 | 电子科技大学 | Ultra-wideband helix traveling wave tube and helix slow wave structure thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102867716A (en) * | 2012-09-10 | 2013-01-09 | 中国电子科技集团公司第十二研究所 | Diamond-metal compound type clamping rod for travelling wave tube and manufacture method of diamond-metal compound type clamping rod |
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| US4278914A (en) * | 1979-10-18 | 1981-07-14 | The United States Of America As Represented By The Secretary Of The Navy | Diamond supported helix assembly and method |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102867716A (en) * | 2012-09-10 | 2013-01-09 | 中国电子科技集团公司第十二研究所 | Diamond-metal compound type clamping rod for travelling wave tube and manufacture method of diamond-metal compound type clamping rod |
Non-Patent Citations (3)
| Title |
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| CVD金刚石在电真空器件中的应用;李新宇，郭辉，刘征，高陇桥;《真空电子技术》;20090825(第4期);全文 * |
| CVD金刚石薄膜金属化及其与金属的焊接研究;李新宇，高陇桥，刘征，郭辉;《真空电子技术》;20100825(第4期);第43-46页 * |
| 镀膜组件对螺旋线慢波结构性能的影响;韩勇，刘燕文，丁耀根，刘濮鲲;《真空科学与技术学报》;20090515;第29卷(第S1期);全文 * |
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