CN103286091B - A kind of cleaning method of substrate - Google Patents
A kind of cleaning method of substrate Download PDFInfo
- Publication number
- CN103286091B CN103286091B CN201310231298.2A CN201310231298A CN103286091B CN 103286091 B CN103286091 B CN 103286091B CN 201310231298 A CN201310231298 A CN 201310231298A CN 103286091 B CN103286091 B CN 103286091B
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- Prior art keywords
- substrate
- cleaning
- organic matter
- cleaning agent
- water
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- 239000000758 substrate Substances 0.000 title claims abstract description 102
- 238000004140 cleaning Methods 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000012459 cleaning agent Substances 0.000 claims abstract description 39
- 239000005416 organic matter Substances 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 44
- 239000012530 fluid Substances 0.000 claims description 11
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 10
- 229910001867 inorganic solvent Inorganic materials 0.000 claims description 7
- 239000003049 inorganic solvent Substances 0.000 claims description 7
- 238000003303 reheating Methods 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 5
- 238000011010 flushing procedure Methods 0.000 claims description 4
- -1 Specifically Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 14
- 230000003749 cleanliness Effects 0.000 abstract description 4
- 239000006210 lotion Substances 0.000 description 14
- 239000012535 impurity Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 150000001298 alcohols Chemical class 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000002632 lipids Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 125000001997 phenyl group Chemical class [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- C11D2111/22—
-
- C11D2111/46—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
Abstract
The present invention relates to cleaning technique field, more particularly to a kind of cleaning method of substrate.The cleaning method of the substrate, including：Pre-add heat treatment is carried out to substrate；Dissolving cleaning is carried out to pretreated substrate using cleaning agent；Secondary rinse is carried out to the substrate after cleaning.The cleaning method for the substrate that the present invention is provided, by heating substrate while carrying out dissolving cleaning to substrate using cleaning agent, the molecular activity of foreign organic matter can effectively be increased, promote the solubility of cleaning agent and foreign organic matter, and then effectively remove tiny foreign organic matter, the cleanliness factor of cleaning base plate is improved, and then lifts the yield of product.
Description
Technical field
The present invention relates to cleaning technique field, more particularly to a kind of cleaning method of substrate.
Background technology
With the development of science and technology, LCD Technology also constantly improve therewith.TFT-LCD（Thin Film
Transistor-Liquid Crystal Display, TFT-liquid crystal display）Product are shown with its image
Matter is good, energy consumption is low, the advantage such as environmentally friendly in occupation of field of display critical positions, equally, rose in recent years based on OLED（Have
Machine light emitting diode OrganicLight-EmittingDiode）Display Technique it is also increasingly mature, it has simple structure, thick
Spend thin, fast response time, the advantage such as rich colors.
In LCD and OLED technical process, it is related to a variety of high polymer materials, substrate passes through a series of photoetching, wet method
The techniques such as etching, stripping, often produce foreign organic matter, in order to not influence the quality of production of subsequent product, lead in the prior art
Frequently with normal-temperature water cleaning base plate, the purpose for removing foreign organic matter has been reached.
But found in practical operation, organic matter foreign matter is difficult thoroughly to remove in the presence of normal-temperature water, on substrate still
The certain small foreign body of residual, and to be easy to induce product bad for these small foreign bodies, significantly reduces the yield of product.
The content of the invention
（One）The technical problem to be solved
The technical problem to be solved in the present invention is to provide a kind of cleaning method of substrate, to overcome cleaning of the prior art
The small foreign body that method is difficult to remove substrate surface causes induction product bad, causes the defect that product yield is low.
（Two）Technical scheme
In order to solve the above technical problems, the present invention provides a kind of cleaning method of substrate, including：
Pre-add heat treatment is carried out to substrate；
Dissolving cleaning is carried out to pretreated substrate using cleaning agent；
Secondary rinse is carried out to the substrate after cleaning.
Preferably, the pre-add heat treatment is specifically included：
Substrate is heated using hot gas source, thermal water source, infrared heat source.
Preferably, the temperature of the basal plate preheating is 40~120 DEG C.
Preferably, the temperature of the basal plate preheating is 100~120 DEG C.
Preferably, the cleaning agent be can dissolve the alcohols lotion of foreign organic matter of substrate surface, benzene class lotion, ethers or
One kind in lipid.
Preferably, the alcohols lotion is isopropanol.
Preferably, the cleaning agent is the inorganic solvent for the foreign organic matter that can dissolve substrate surface.
Preferably, the inorganic solvent is the mixed solution of ammoniacal liquor and the plain water of water, the volume ratio of the ammoniacal liquor and the plain water of water
For：1:3~2:1.
Preferably, the volume ratio of the ammoniacal liquor and the plain water of water is：1：1.
Preferably, the secondary flushing of substrate progress after described pair of cleaning is specifically included：
Substrate is rinsed using High Pressure Pure Water or the fluid of high-pressure water vapor two.
Preferably, during being cleaned using cleaning agent to substrate, in addition to reheating is carried out to substrate.
（Three）Beneficial effect
The substrate-cleaning method that the present invention is provided, by heating substrate while carrying out dissolving clear to substrate using cleaning agent
Wash, can effectively increase the molecular activity of foreign organic matter, promote the solubility of cleaning agent and foreign organic matter, and then effectively remove tiny
Foreign organic matter, improve cleaning base plate cleanliness factor, and then lifted product yield.
Brief description of the drawings
Fig. 1 is the cleaning method flow chart of substrate of the embodiment of the present invention；
Fig. 2 is normal temperature state lower substrate surface organic impurities molecular activity schematic diagram in the embodiment of the present invention；
Fig. 3 is heated condition lower substrate surface organic impurities molecular activity schematic diagram in the embodiment of the present invention；
Fig. 4 is the cleaning device structural representation of substrate of the embodiment of the present invention；
Fig. 5 is another schematic diagram of cleaning device structure of substrate of the embodiment of the present invention.
Embodiment
With reference to the accompanying drawings and examples, the embodiment to the present invention is described in further detail.Implement below
Example is used to illustrate the present invention, but is not limited to the scope of the present invention.
As shown in figure 1, the substrate-cleaning method that the present embodiment is provided, specifically includes following steps：
Step S101, to substrate carry out pre-add heat treatment.
Specifically, being heated using thermals source such as hot gas source, thermal water source, infrared heat sources to substrate.Wherein thermal water source
Heating-up temperature be 80-100 DEG C, it can be 100-120 DEG C to use hot gas source or infrared heat source substrate heating-up temperature.
The temperature of basal plate preheating is 25~120 DEG C, it is preferred that substrate is preheated into 40~120 DEG C, preferably, by base
Plate is preheated to 100~120 DEG C.In embodiments of the present invention, the need for the pre-heating temperature of substrate can be according to cleaning
To adjust, for example, substrate can be heated to 40 DEG C, 50 DEG C, 60 DEG C, 70 DEG C, 80 DEG C, 90 DEG C, 100 DEG C, 110 DEG C or 120 DEG C.
The heating-up temperature of substrate is higher, and the molecular activity of foreign organic matter is higher, more easy cleaned agent dissolving.
With reference to Fig. 2（Arrow length represents that its molecular activity is strong and weak in figure）, under normal temperature state, it is organic that substrate surface is present
Foreign matter（Impurity）Molecular activity it is weaker, it is not easy to dissolved with cleaning agent；
With reference to Fig. 3, pre-add heat treatment is carried out to substrate using above-mentioned means, organic polymer foreign matter can be greatly increased
Molecular activity, promote the dissolving of foreign organic matter and cleaning agent, and the temperature caused in cleaning process to substrate surface can be reduced
Degree is poor, further promotes follow-up cleaning performance.
Step S102, dissolving cleaning carried out to pretreated substrate using cleaning agent.
Specifically, spraying cleaning agent to substrate Jing Guo the pre-heat treatment, the organic of substrate surface is dissolved using cleaning agent
Foreign matter, the foreign organic matter that will be attached on substrate is thoroughly removed.
Wherein, the cleaning agent selects the lotion that similar can be mixed to the foreign organic matter on substrate, can be dissolvable substrate
The organic solvent of the foreign organic matter on surface, wherein, organic solvent is one kind in alcohols lotion, benzene class lotion, ethers or lipid.
It is preferred that, the alcohols lotion is preferably isopropanol；Or can be the inorganic solvent for the foreign organic matter that can dissolve substrate surface.
Wherein, the mixed solution of the preferred ammoniacal liquor of inorganic solvent and the plain water of water to carry out clearly the foreign organic matter on substrate surface
Wash.In the mixed solution, the volume ratio of the ammoniacal liquor and the plain water of water is：1:3~2:1, it is preferred that the volume of ammoniacal liquor and the plain water of water
Than for：1：1.
Certainly, the cleaning agent in the present embodiment includes but is not limited to, from above-mentioned listed solution, also can select
Other can be with foreign organic matter phased soln solution.
The chemical reaction for the phased soln that can be carried out using cleaning agent and foreign organic matter, and then will be organic different on substrate surface
Thing is got rid of.
In order to further improve the molecular activity of foreign organic matter so that cleaning agent can dissolve ground faster, in cleaning agent to base
During plate is cleaned, in addition to reheating is carried out to substrate.Wherein, the temperature for reheating being carried out to substrate is 25
~120 DEG C, actual temp can for 25 DEG C, 30 DEG C, 35 DEG C, 40 DEG C, 50 DEG C, 60 DEG C, 70 DEG C, 80 DEG C, 90 DEG C, 100 DEG C, 110
DEG C or 120 DEG C.
Step S103, to after cleaning substrate carry out it is secondary rinse.
Specifically, two ways can be rinsed using pure water rinsing or the mixing of the fluid of steam two, pass through High-Pressure Water or high pressure
The impulsive force of the fluid of steam two, or gas bubbles explosion impulsive force, lotion and other impurities are rinsed well in the lump, Jin Erjin
One step improves the cleannes of substrate surface, reduces the residual quantity of impurity, and providing cleaning to subsequent product processing ensures.In this step
Pure water rinsing or the fluid flushing of steam two can also be using not heating using the pure water after heating or steam two fluid
Pure water or the fluid of steam two, can be better than using the effect not heated using the effect of heating, can so increase the volatilization of lotion,
So as to improve the effect of cleaning.
The present invention provides a kind of cleaning method of substrate, by being preheated to substrate, afterwards using cleaning agent to substrate
Dissolving cleaning is carried out, can effectively increase the molecular activity of foreign organic matter, promotes solubility of the foreign organic matter in cleaning agent, and then
Tiny foreign organic matter is effectively removed, the cleanliness factor of cleaning base plate is improved, and then lift the yield of product.
In addition, as shown in figure 4, the present invention a kind of cleaning device of substrate is also provided, including：
Heating unit 10, it is used to carry out pre-add heat treatment to substrate；
Cleaning unit 20, it is used to spray cleaning agent to pretreated substrate, and dissolving cleaning is carried out to substrate；
Rinsing unit 30, it is used to carry out the substrate after cleaning secondary rinse.
Specifically, with reference to Fig. 5, a heating unit 10 include setting on the first bottom plate 11, first bottom plate 11 to
Few first shower nozzle 12, the connection thermal water source of the first shower nozzle 12 or hot gas source, hot water is sprayed by the first shower nozzle to substrate
Or hot gas, the pre-heat treatment is carried out to substrate 50；
Or, one time heating unit 10 can also use infrared heating subelement, and infrared heating is carried out to substrate.
Heating unit 10 also includes boiler, and the first spray is transferred to by high-pressure pump and pipeline after normal-temperature water is heated
First 12, sprayed by the first shower nozzle 12, substrate is preheated.
Above-mentioned means carry out pre-add heat treatment to substrate 50, and the molecule that can greatly increase organic polymer foreign matter is lived
Property, promote the dissolving of foreign organic matter and cleaning agent, and the temperature difference caused in cleaning process to substrate surface can be reduced, enter one
Step promotes follow-up cleaning performance.
Wherein, cleaning unit 20 includes being arranged at intervals at least one second shower nozzle on the second bottom plate, second bottom plate, leads to
Cross the second shower nozzle and spray cleaning agent to substrate 50.
Specifically, spraying cleaning agent to substrate Jing Guo the pre-heat treatment so that cleaning agent and substrate surface it is organic different
Thing is using the similar principle that mixes, and the foreign organic matter that will be attached on substrate is thoroughly removed.
Wherein, the cleaning agent selects the lotion that similar can be mixed to the foreign organic matter on substrate, and it is specifically as follows organic
Lotion, or inorganic lotion.Wherein, the preferred isopropanol of organic lotion（IPA）Solution.
The mixed solution of the plain water of the preferred ammoniacal liquor of inorganic solvent and water is cleaned to the foreign organic matter on substrate surface.
Certainly, the cleaning agent in the present embodiment includes but is not limited to, from above-mentioned listed solution, also can select
Other can be with foreign organic matter phased soln solution.
Cleaning agent is dissolvable in water using foreign organic matter, and then the foreign organic matter on substrate surface is got rid of.
Wherein, rinsing unit 30 includes the 3rd bottom plate, sets at least one the 3rd shower nozzle on the 3rd bottom plate, by the
Three shower nozzles spray pure water or the fluid of steam two to substrate 50.
Wherein, rinsing unit 30 can also connect high-pressure pump, for forming High Pressure Pure Water or the fluid of high-pressure water vapor two.
Two ways is rinsed using pure water rinsing or the mixing of the fluid of steam two, passes through High-Pressure Water or the fluid of high-pressure water vapor two
Impulsive force, or gas bubbles explosion impulsive force, lotion and other impurities are rinsed well in the lump, and then further improve base
The cleannes of plate surface, reduce the residual quantity of impurity, and providing cleaning to subsequent product processing ensures.
Specifically, rinsing unit 30 also includes boiler, the is transferred to by high-pressure pump and pipeline after normal-temperature water is heated
One shower nozzle 12, is sprayed by the first shower nozzle 12, and secondary rinse is carried out to substrate.
In actual device, first bottom plate, the second bottom plate and the 3rd bottom plate can be same part, first shower nozzle,
Second shower nozzle and the 3rd shower nozzle can also be same part, the processing using same shower nozzle to substrate progress different medium.Certainly,
Above-mentioned part can not also be same part.
In addition, the cleaning device can also include reheating unit, a heating unit is located at the side of substrate, and
Reheating unit is located at the opposite side of substrate, during being cleaned in cleaning unit to substrate, and substrate is carried out
Reheating, is easy to the foreign organic matter for further strengthening substrate surface to be dissolved in cleaning agent, accelerates cleaning speed.
The present invention provides a kind of cleaning device of substrate, by heating substrate while being dissolved using cleaning agent to substrate
Cleaning, can effectively increase the molecular activity of foreign organic matter, promote the solubility of cleaning agent and foreign organic matter, and then effectively remove thin
Small foreign organic matter, improves the cleanliness factor of cleaning base plate, and then lift the yield of product.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, some improvement and modification can also be made, these improvement and modification
Also it should be regarded as protection scope of the present invention.
Claims (6)
1. a kind of cleaning method of substrate, it is characterised in that including：
Pre-add heat treatment is carried out to substrate；
Dissolving cleaning is carried out to pretreated substrate using cleaning agent,
Specifically, cleaning agent is sprayed to oneself substrate Jing Guo the pre-heat treatment, the foreign organic matter of substrate surface is dissolved using cleaning agent,
The foreign organic matter that will be attached on substrate is thoroughly removed, wherein, the cleaning agent is selected can phase patibhaga-nimitta with the foreign organic matter on substrate
Molten cleaning agent；
Secondary flushing is carried out to the substrate after cleaning,
Wherein, the secondary flushing of substrate progress after described pair of cleaning is specifically included：Using High Pressure Pure Water or the fluid of high-pressure water vapor two
Substrate is rinsed,
The cleaning agent is the inorganic solvent for the foreign organic matter that can dissolve substrate surface, and the inorganic solvent is ammoniacal liquor and Shui Sushui
Mixed solution, the volume ratio of the plain water of the ammoniacal liquor and water is：1:3~2:1.
2. cleaning method as claimed in claim 1, it is characterised in that the pre-add heat treatment is specifically included：
Substrate is heated using hot gas source, thermal water source or infrared heat source.
3. cleaning method as claimed in claim 1, it is characterised in that the temperature of the basal plate preheating is 40~120 DEG C.
4. cleaning method as claimed in claim 3, it is characterised in that the temperature of the basal plate preheating is 100~120 DEG C.
5. cleaning method as claimed in claim 1, it is characterised in that the volume ratio of the ammoniacal liquor and the plain water of water is：1：1.
6. cleaning method as claimed in claim 1, it is characterised in that during being cleaned using cleaning agent to substrate,
Also include carrying out reheating to substrate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310231298.2A CN103286091B (en) | 2013-06-09 | 2013-06-09 | A kind of cleaning method of substrate |
| PCT/CN2013/088099 WO2014198107A1 (en) | 2013-06-09 | 2013-11-29 | Method for cleaning a substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310231298.2A CN103286091B (en) | 2013-06-09 | 2013-06-09 | A kind of cleaning method of substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103286091A CN103286091A (en) | 2013-09-11 |
| CN103286091B true CN103286091B (en) | 2017-09-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310231298.2A Active CN103286091B (en) | 2013-06-09 | 2013-06-09 | A kind of cleaning method of substrate |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103286091B (en) |
| WO (1) | WO2014198107A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103286091B (en) * | 2013-06-09 | 2017-09-19 | 京东方科技集团股份有限公司 | A kind of cleaning method of substrate |
| KR102456079B1 (en) | 2014-12-24 | 2022-11-21 | 삼성디스플레이 주식회사 | Cleaning composition for removing oxide and method of cleaning using the same |
| CN104785482A (en) * | 2015-04-20 | 2015-07-22 | 武汉华星光电技术有限公司 | Substrate cleaning method and device |
| CN109465242A (en) * | 2018-10-31 | 2019-03-15 | 安徽东耀建材有限公司 | A kind of method for cleaning of the aluminium chassis of hollow glass |
| CN114101157A (en) * | 2020-08-28 | 2022-03-01 | 广西创兴玻璃科技有限公司 | Cleaning method of low-E glass |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004074021A (en) * | 2002-08-19 | 2004-03-11 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate cleaning unit |
| US7921859B2 (en) * | 2004-12-16 | 2011-04-12 | Sematech, Inc. | Method and apparatus for an in-situ ultraviolet cleaning tool |
| CN101312794B (en) * | 2005-11-23 | 2012-07-04 | Fsi国际公司 | Process for removing material from substrates |
| CN100573343C (en) * | 2006-02-27 | 2009-12-23 | 探微科技股份有限公司 | The method that crystal edge cleans |
| JP4787089B2 (en) * | 2006-06-26 | 2011-10-05 | 大日本スクリーン製造株式会社 | Substrate processing method and substrate processing apparatus |
| JP5413016B2 (en) * | 2008-07-31 | 2014-02-12 | 東京エレクトロン株式会社 | Substrate cleaning method, substrate cleaning apparatus and storage medium |
| KR101001307B1 (en) * | 2008-10-24 | 2010-12-14 | 세메스 주식회사 | Method for Cleaning Wafer |
| JP5395405B2 (en) * | 2008-10-27 | 2014-01-22 | 東京エレクトロン株式会社 | Substrate cleaning method and apparatus |
| US8444768B2 (en) * | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| US8614053B2 (en) * | 2009-03-27 | 2013-12-24 | Eastman Chemical Company | Processess and compositions for removing substances from substrates |
| JP2011198933A (en) * | 2010-03-18 | 2011-10-06 | Tokyo Electron Ltd | Device and method for removing resist |
| US20120073607A1 (en) * | 2010-09-27 | 2012-03-29 | Eastman Chemical Company | Polymeric or monomeric compositions comprising at least one mono-amide and/or at least one diamide for removing substances from substrates and methods for using the same |
| US20120260947A1 (en) * | 2011-04-12 | 2012-10-18 | Satoshi Kaneko | Substrate cleaning apparatus, substrate cleaning method, and computer-readable recording medium having substrate cleaning program recorded therein |
| JP5639556B2 (en) * | 2011-09-21 | 2014-12-10 | 株式会社東芝 | Semiconductor substrate cleaning method and apparatus |
| CN103264022B (en) * | 2013-05-15 | 2015-04-08 | 京东方科技集团股份有限公司 | Substrate cleaning device, system and method |
| CN103286091B (en) * | 2013-06-09 | 2017-09-19 | 京东方科技集团股份有限公司 | A kind of cleaning method of substrate |
-
2013
- 2013-06-09 CN CN201310231298.2A patent/CN103286091B/en active Active
- 2013-11-29 WO PCT/CN2013/088099 patent/WO2014198107A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014198107A1 (en) | 2014-12-18 |
| CN103286091A (en) | 2013-09-11 |
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