CN100573343C - The method that crystal edge cleans - Google Patents
The method that crystal edge cleans Download PDFInfo
- Publication number
- CN100573343C CN100573343C CNB2006100549654A CN200610054965A CN100573343C CN 100573343 C CN100573343 C CN 100573343C CN B2006100549654 A CNB2006100549654 A CN B2006100549654A CN 200610054965 A CN200610054965 A CN 200610054965A CN 100573343 C CN100573343 C CN 100573343C
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- Prior art keywords
- crystal edge
- wafer
- reference pattern
- coating material
- material layer
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- 239000013078 crystal Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000000576 coating method Methods 0.000 claims abstract description 40
- 239000011248 coating agent Substances 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 22
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 33
- 238000004140 cleaning Methods 0.000 claims description 15
- 239000007921 spray Substances 0.000 claims description 10
- 206010070834 Sensitisation Diseases 0.000 claims description 4
- 230000008313 sensitization Effects 0.000 claims description 4
- 239000012459 cleaning agent Substances 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 29
- 239000013043 chemical agent Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention discloses the method that a kind of crystal edge cleans.At first, provide wafer, the surface of this wafer includes the coating material layer.Then utilize the optical projection mode with ray cast on this wafer forming reference pattern, and this reference pattern defines central area on the surface of this wafer, and around the crystal edge area of this central area.According to this reference pattern, remove this coating material layer that is positioned at this crystal edge area subsequently.
Description
Technical field
The present invention relates to the method that a kind of crystal edge cleans (edge bevel rinse), refer to that especially a kind of optical projection mode of utilizing forms reference pattern on wafer, precisely control the spray position of chemical agent thus, and then remove the method for the photosensitive material layer of crystal edge area.
Background technology
In semiconductor and micro electronmechanical technology, photoetching process is being played the part of considerable role.Because the complexity of semiconductor element or microcomputer electric component system is reflected on the number of times of photoetching process, so photoetching process is very huge for the yield rate influence of related elements.
Photoetching process consists predominantly of three steps, that is photoresist coating, exposure and development, and wherein the photoresist coating is the first step of photoetching process, so the good and bad yield rate that directly influences subsequent technique of photoresist coating.For the photoresist coating process, the photoresist layer that is coated on the wafer must possess homogeneous thickness, and finishes the photoresist coating with the general employing rotary coating of prior art.So-called rotary coating is that wafer is fixed on the turning axle of rotary coating board, is in the coating of carrying out photoresist under the situation of rotation at wafer, utilizes centrifugal force to make photoresist be uniformly distributed in the surface of wafer thus.Though the photoresist layer that utilizes the rotary coating mode to form has homogeneous thickness at the central area of wafer, but the crystal edge area in wafer can produce the phenomenon that photoresist is piled up, and this type of photoresist is piled up and is commonly referred to as pearl residue (edge bead).The photoresist of wafer region is piled up except subsequent technique is had the negative effect, more likely causes problems such as board pollution, therefore generally after the photoresist coating, can carry out the crystal edge cleaning and remove the photoresist layer that is positioned at crystal edge area.
Please refer to Fig. 1.Fig. 1 utilizes semi-automatic coating machine platform to carry out the method synoptic diagram that crystal edge cleans for known.As shown in Figure 1, before carrying out the crystal edge cleaning, wafer 10 is fixed on the bearing 22 of semi-automatic coating machine platform 20, and wherein bearing 22 is installed on the turning axle 24, and wafer 10 can rotate according to certain speed when carrying out technology thus.When wafer 10 was finished the photoresist coating process, the surface of wafer 10 can form photoresist layer 12.As previously mentioned, wafer 10 is divided into central area and crystal edge area, and be positioned at the photoresist layer 12 of crystal edge area owing to have the problem that photoresist is piled up, therefore must utilize the mode of spray chemical agent to make photoresist layer 12 dissolving of crystal edge area, and then utilize the centrifugal force that rotates generation that photoresist layer 12 is got rid of and remove.As shown in Figure 1, known method of carrying out the crystal edge cleaning is taked manual mode with manpower, utilize ejector filler 26 with the chemical agent spray on the photoresist layer 12 of crystal edge area, make the photoresist layer 12 of dissolving break away from the crystal edge area of wafer 10 by the centrifugal force of rotation wafer 10.Yet, according to the method that known crystal edge cleans, central area and crystal edge area there is no observable interface, so the operator of operation ejector filler 26 there is no any reference data, and purely rule of thumb with the chemical agent spray in crystal edge area, therefore often can't be exactly with the chemical agent spray in crystal edge area.Under this situation, the crystal edge cleaning is often lacked experience because of the operator or visual judgement deviation causes the cleaning of photoresist layer 12 not enough or excessive, causes crystal edge cleaning yield rate on the low side.
Summary of the invention
One of purpose of the present invention is to provide a kind of method of crystal edge cleaning, with the yield rate of effective lifting crystal edge cleaning.
For reaching above-mentioned purpose, the invention provides the method that a kind of crystal edge cleans.At first, provide wafer, the surface of this wafer includes the coating material layer.Then utilize the optical projection mode with ray cast on this wafer forming reference pattern, and this reference pattern defines central area on the surface of this wafer, and around the crystal edge area of this central area.According to this reference pattern, remove this coating material layer that is positioned at this crystal edge area subsequently.
In order a nearlyer step to understand feature of the present invention and technology contents, see also following about detailed description of the present invention and accompanying drawing.Yet accompanying drawing is only for reference and aid illustration usefulness, is not to be used for the present invention is limited.
Description of drawings
Fig. 1 utilizes semi-automatic coating machine platform to carry out the method synoptic diagram that crystal edge cleans for known.
The method synoptic diagram that Fig. 2 to Fig. 4 cleans for crystal edge of the present invention.
Description of reference numerals
10 wafers, 12 photoresist layers
20 semi-automatic coating machine platform 22 bearings
24 turning axles, 26 ejector fillers
50 wafers, 52 coating material layers
54 central areas, 56 crystal edge areas
60 semi-automatic coating machine platform 62 bearings
64 turning axles, 66 optical projection apparatus
68 light, 70 luminous points
72 smooth vernier scale 74 ejector fillers
Embodiment
Please refer to Fig. 2 to Fig. 4.Fig. 2 to Fig. 4 is the method synoptic diagram that crystal edge of the present invention cleans, and wherein Fig. 2 utilizes semi-automatic coating machine platform for the preferred embodiments of the present invention and carries out the method synoptic diagram that crystal edge cleans, and Fig. 3 and Fig. 4 then are the top view that carries out the wafer of crystal edge cleaning.As shown in Figure 2, the wafer 50 that a surface has been coated with coating material layer 52 is fixed on the bearing 62 of semi-automatic coating machine platform 60, and wherein bearing 62 is installed on the turning axle 64, and wafer 50 can rotate according to certain speed when carrying out technology thus.What deserves to be explained is that in the present embodiment coating material layer 52 is the photoresist layer, right crystal edge cleaning method of the present invention is not confined to be used to clean the photoresist layer, carries out the coating material that crystal edge cleans, for example resin material and can be applicable to any need.
The method according to this invention, semi-automatic coating machine platform 60 is provided with optical projection apparatus 66, for example dispose the lens set of Fresnel Lenses (Fresnel lens), and when carrying out the crystal edge cleaning, optical projection apparatus 66 can produce the light with specific wavelength 68 on the surface that is projected to wafer 50, to produce reference pattern.What deserves to be explained is because present embodiment is an example to clean the photoresist layer, therefore the wavelength of light 68 need be positioned at the wavelength coverage that can't make the sensitization of photoresist layer, to avoid the photoresist layer to produce the sensitization situation, in addition, the light 68 launched of optical projection apparatus 66 can be linear light or ray.
As shown in Figure 3, light 68 can be luminous point 70, light vernier scale 72 at the reference pattern that the surface projection of wafer 50 goes out, or be accurately to define central area 54 and crystal edge area 56 on the surface of wafer 50 by this reference pattern simultaneously by any pattern that can be used as position reference.Refer again to Fig. 4, and in the lump with reference to figure 2, when the surface of wafer 50 form can reference pattern for the location after, the operator can clearly learn certain position of crystal edge area 56 according to luminous point 70 or light vernier scale 72, and utilize ejector filler 74 with the chemical agent spray on crystal edge area 56.When the chemical agent spray behind crystal edge area 56, promptly can dissolve coating material layer 52, and the coating material layer 52 of dissolving can be got rid of and removed, and reaches the effect that crystal edge cleans by the centrifugal force that rotation produces from the surface of crystal edge area 56.
From the above, the method that crystal edge of the present invention cleans utilizes the optical projection mode to define the position of crystal edge area thus clearly at the surface of wafer projection reference pattern, so make the operator can clearly learn the position of crystal edge area, and in view of the above exactly with the clear spray of chemical medicine in crystal edge area, and then promote the yield rate of crystal edge cleaning.In sum, the crystal edge of the present invention method of cleaning have step simple, with low cost, control accurate advantage.
The above only is the preferred embodiments of the present invention, and all equivalent variations and modifications of doing according to claim of the present invention all should belong to covering scope of the present invention.
Claims (11)
1, a kind of method of crystal edge cleaning includes:
Wafer is provided, and the surface of described wafer includes the coating material layer;
Utilize the optical projection mode with ray cast on described wafer forming reference pattern, and described reference pattern defines central area on the surface of described wafer, and the crystal edge area in surrounding said central district;
And
According to described reference pattern, remove the described coating material layer that is positioned at described crystal edge area.
2, the method for claim 1, wherein said coating material layer includes the photoresist layer.
3, method as claimed in claim 2, wherein said light has wavelength, and described wavelength is positioned at the wavelength coverage that can't make the sensitization of described photoresist layer.
4, the method for claim 1, the step of wherein removing the described coating material layer that is positioned at described crystal edge area includes:
According to described reference pattern with the cleaning agent spray in described crystal edge area, make the dissolving of described coating material layer; And
Rotating described wafer makes described coating material layer get rid of from described crystal edge area to remove.
5, the method for claim 1, wherein said reference pattern are luminous point.
6, the method for claim 1, wherein said reference pattern are the light vernier scale.
7, a kind of method of crystal edge cleaning includes:
Wafer is provided, and the surface of described wafer includes the coating material layer;
Utilize the optical projection mode with ray cast on described wafer forming reference pattern, and described reference pattern defines central area on the surface of described wafer, and the crystal edge area in surrounding said central district;
Rotate described wafer;
According to described reference pattern, with manual mode with the cleaning agent spray in described crystal edge area, make the dissolving of described coating material layer, and described coating material layer got rid of from described crystal edge area remove.
8, method as claimed in claim 7, wherein said coating material layer includes the photoresist layer.
9, method as claimed in claim 8, wherein said light has wavelength, and described wavelength is positioned at the wavelength coverage that can't make the sensitization of described photoresist layer.
10, method as claimed in claim 7, wherein said reference pattern are luminous point.
11, method as claimed in claim 7, wherein said reference pattern are the light vernier scale.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100549654A CN100573343C (en) | 2006-02-27 | 2006-02-27 | The method that crystal edge cleans |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100549654A CN100573343C (en) | 2006-02-27 | 2006-02-27 | The method that crystal edge cleans |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101030045A CN101030045A (en) | 2007-09-05 |
| CN100573343C true CN100573343C (en) | 2009-12-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100549654A Expired - Fee Related CN100573343C (en) | 2006-02-27 | 2006-02-27 | The method that crystal edge cleans |
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| Country | Link |
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| CN (1) | CN100573343C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101685271B (en) * | 2008-09-23 | 2012-01-11 | 和舰科技(苏州)有限公司 | Method for detecting wafer edge cleaning width of wafer |
| CN103286091B (en) * | 2013-06-09 | 2017-09-19 | 京东方科技集团股份有限公司 | A kind of cleaning method of substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4904570A (en) * | 1985-02-15 | 1990-02-27 | Sharp Kabushiki Kaisha | Method of using a projection aligner for photoetching |
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2006
- 2006-02-27 CN CNB2006100549654A patent/CN100573343C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4904570A (en) * | 1985-02-15 | 1990-02-27 | Sharp Kabushiki Kaisha | Method of using a projection aligner for photoetching |
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| CN101030045A (en) | 2007-09-05 |
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