CN103280519B - Minitype thermoelectricity module and manufacture method thereof - Google Patents
Minitype thermoelectricity module and manufacture method thereof Download PDFInfo
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- CN103280519B CN103280519B CN201310239624.4A CN201310239624A CN103280519B CN 103280519 B CN103280519 B CN 103280519B CN 201310239624 A CN201310239624 A CN 201310239624A CN 103280519 B CN103280519 B CN 103280519B
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Abstract
The invention discloses a kind of Minitype thermoelectricity module and manufacture method thereof, this manufacture method comprises the following steps: bulk thermoelectric material is cut into thermoelectricity thin slice; Thermoelectricity thin slice is arranged according to the order that P, N replace and fixes; Layer of metal layer is made respectively at the first surface of orientation and second surface that are parallel to thermoelectricity thin slice; Be longitudinally the some row separate slots just touching lower metal layer with lateral incision depth at first surface, to separate thermoelectric material and to make top electrode; Be the some row separate slots just having touched metal level in the longitudinal depth of cut of second surface, to make thermoelectric unit; And cut out bottom electrode at second surface.Comparing of prior art, thermoelectric pile makes by the present invention and connecting electrode processing unites two into one, and only needs precision gas cutting machine to complete, removes the electrode micro Process step that prior art needs usually from, reduce the production cost of Minitype thermoelectricity module.
Description
Technical field
The present invention relates to thermoelectricity field, particularly relate to a kind of Minitype thermoelectricity module and manufacture method thereof.
Background technology
Thermoelectric device refers to an electron-like element that directly can realize electric energy and heat energy and mutually change, thermoelectricity (thermoelectric) module that its core is got up to form by the thermoelectric material connection in series-parallel organizing different carrier type more.
The application of the thermoelectric device history of existing more than 100 year so far, is mainly used for detecting temperature, such as thermocouple in early days.Afterwards along with the exploitation of high performance thermoelectric material, be used to again the fields such as electron temperature-control, waste-heat power generation and space flight battery pack.Over nearly 20 years, the miniaturization technologies of electrothermal module is paid close attention to more and more widely because the application background of its uniqueness receives.U.S., moral, Deng state develop the technical scheme of multiple electrothermal module microminiaturization in succession, and are applied to the fields such as compact power, submarine detector, gas sensor and medicine equipment.
Nearest theoretical research shows, when utilizing pyroelectric technology to carry out the thermo-electric generation of industrial exhaust heat or vehicle exhaust, characteristic size only by reducing electrothermal module just effectively can reduce the use amount of material under the prerequisite not changing transformation efficiency and power, thus reduces costs and environmental cost.Therefore the low cost Minitype thermoelectricity module manufacturing technology being suitable for large-scale production shows wide market prospects by future.
Minitype thermoelectricity module refers generally to the thermoelectric device of thermoelectric arm characteristic size in micron ~ millimeter magnitude.
The fabrication processing of current electrothermal module mainly comprises the making of thermoelectric material array and making two core procedures of connection metal electrode.The common manufacture method of thermoelectric material array is that PN type thermoelectric material is cut into cube body or cylindrical thermoelectric arm respectively, and then lines up according to the order that P, N are alternate.The making of connection metal electrode refers to produces the electrode be together in series or parallel by thermoelectric arm on upper and lower two surfaces of the thermoelectric pile completed, conventional method is first by thermoelectric arm end plane metal, then welds with the solder coated according to electrode pattern shape.
But processing thermoelectric arm yardstick is less than to the Minitype thermoelectricity module of 1mm, above-mentioned technique can run into technical difficulty: first thermoelectric material is general more crisp and soft, common mechanical processing technique is difficult to the cutting realizing submillimeter rank thermoelectric arm, need to adopt high-accuracy mechanical process equipment just can complete, such equipment is not only expensive but also rarely found at home; Secondly, patterning welding procedure is also difficult to reach submillimeter size, needs to adopt the photoetching of microelectronic industry or screen printing technique to realize, and equipment required like this and cost of labor all can increase greatly.
The typical technology that can realize Minitype thermoelectricity module mass production is as follows:
1) refer to a kind of technology in US Patent No. 6,440,212B1, utilize by the molten state drop of the printer head of computer program precise hard_drawn tuhes at sprayed on substrates P, N-type thermoelectric material, after condensation, form thermoelectric pile.And then utilize similar technique to produce metal connecting electrode.Costly, disposable input cost is high for device therefor; Or equipment is more special, it is specially certain Minitype thermoelectricity module manufacture craft and the equipment that designs that part belongs to, and not easily realizes producing in enormous quantities.
2) US Patent No. 5,956, a kind of technology is refer in 569A, silica-based or other substrate utilizes the technology such as etching, vapour deposition in microelectric technique, first on substrate, produce groove template, then produce end to end P, N-type thermal electric film within it, form thermoelectric pile, finally make connecting electrode by similar technique again.Its manufacture craft is not for raw material with the thermoelectric block body material that market can have been bought at a low price, but with powder or element simple substance for raw material, utilize the technologies of preparing such as condensation, powder sintering, film to synthesize, this just increases the quality risk of technical difficulty and product.
3) refer to a kind of technology in US Patent No. 20020069906A1, first the method for chemical etching or laser drilling is utilized to produce through hole on metal or wafer, then utilize two to block version and insert P, N-type thermoelectricity powdery pulp successively, after sintering, form thermoelectric pile, and then utilize the technique of photoetching to produce connecting electrode.Its processing step is more, and some technique crosses over multiple technical fields such as materials synthesis, precision optical machinery processing and microelectronics, and product quality management is not easily carried out.
4) refer to a kind of technology in US Patent No. 6,100,463A, first P, the related substrate of N-type thermal electric film are bonded together together, then transverse cuts is opened and lamination formation cubical array, then makes connecting electrode, finally removes substrate by the technique of etching.Its some processes requires higher to the technical merit of operating personnel and qualification, and operation cost is high.
In prior art, the processing technology order of general Minitype thermoelectricity module first processes thermoelectric arm, reprocessing connecting electrode, each step needs diverse equipment, compared with prior art, thermoelectric pile makes by the present invention and connecting electrode processing unites two into one, precision gas cutting machine is only needed to complete, eliminate the electrode micro Process step that prior art needs usually, so, equipment needed thereby can be reduced, reduce process costs, low to the requirement of human users's proficiency, be easy to large-scale mass production minisize thermoelectric cooling piece or generating sheet.
Except object described above, feature and advantage, other object, feature and advantage that the present invention has, will be described in further detail by reference to the accompanying drawings.
Summary of the invention
The object of the invention is the manufacture method providing a kind of Minitype thermoelectricity module, to reduce the production cost of Minitype thermoelectricity module.Present invention also offers a kind of Minitype thermoelectricity module utilizing this manufacture method obtained.
One aspect of the present invention provides a kind of manufacture method of Minitype thermoelectricity module, comprises the following steps: bulk thermoelectric material is cut into thermoelectricity thin slice; Thermoelectricity thin slice is arranged according to the order that P, N replace and fixes; Be parallel to the orientation of thermoelectricity thin slice and the first surface be oppositely arranged and second surface making metal level; And first surface longitudinally cut out the degree of depth be just touch lower metal layer some row separate slots and longitudinally to cut out the degree of depth at second surface be the some row separate slots just having touched metal level, to form the Minitype thermoelectricity module with multiple thermoelectric unit.
Further, thermoelectricity thin slice arranged according to the order that P, N replace and fixedly comprise: utilize mechanical clamp to be fixed by thermoelectricity thin slice and remove mechanical clamp after welding or plating layer of metal layer.
Further, thermoelectricity thin slice arranged according to the order that P, N replace and fixedly comprise: by the mode of gummed, thermoelectricity thin slice being adhesively fixed mutually.
Further, thermoelectricity thin slice arranged according to the order that P, N replace and also comprise after the step of fixing: to be parallel to thermoelectricity thin slice orientation first surface and second surface polishes, polishing and metallization.
Further, make layer of metal layer respectively and comprise: first surface and second surface are all welded with the metallic plate scribbling solder at the first surface of orientation and second surface that are parallel to thermoelectricity thin slice, wherein, metallic plate forms metal level.
Further, make layer of metal layer respectively at the first surface of orientation and second surface that are parallel to thermoelectricity thin slice to comprise: form layer of metal layer at first surface and second surface respectively by plating.
Further, above-mentioned manufacture method be also included in first surface transversely cut out respectively the degree of depth be just touch lower metal layer some row separate slots and cut out bottom electrode at second surface, its depth of cut is the metal level only cut on second surface.
Further, above-mentioned manufacture method is also included in after bottom electrode draws lead-in wire and encapsulates Minitype thermoelectricity module.
Further, the some row separate slots longitudinally cut out at first surface are for separating thermoelectric unit, and the some row separate slots longitudinally cut out at second surface are for separating two thermoelectric arms of thermoelectric unit.
Present invention also offers the Minitype thermoelectricity module that a kind of manufacture method according to Minitype thermoelectricity module described above obtains.
Accompanying drawing explanation
Forming the part of this specification, showing the preferred embodiments of the present invention for understanding accompanying drawing of the present invention further, and be used for principle of the present invention is described together with specification.In figure:
Fig. 1 is the schematic diagram fixing by fixture according to P, N thermoelectricity wafer array of the present invention;
Fig. 2 is the schematic diagram that P, N thermoelectricity wafer array according to the present invention is fixed by bonding agent;
Fig. 3 is the structural representation according to the thermoelectric pile for following process of the present invention;
Fig. 4 is the structural representation of upper surface according to the present invention through the thermoelectric pile of follow-up transverse cuts operation;
Fig. 5 is the structural representation of upper surface according to the present invention through the thermoelectric pile of follow-up longitudinal cutting action;
Fig. 6 is the structural representation of lower surface according to the present invention through the thermoelectric pile of follow-up longitudinal cutting action;
The structural representation of Fig. 7 thermoelectric pile that to be lower surface according to the present invention repair through follow-up bottom electrode;
Fig. 8 is the schematic diagram of the upper surface pattern according to thermoelectric pile of the present invention;
Fig. 9 is the schematic diagram of the lower surface pattern according to thermoelectric pile of the present invention;
Figure 10 is the schematic diagram of thermoelectric pile when being energized that manufacturing method according to the invention obtains; And
Figure 11 is according to the schematic diagram welded with sheet metal through metallized P, N thermoelectricity wafer array of the present invention.
Description of reference numerals
10, thermoelectric pile; 11, electrode layer;
12, electrode layer; 13, thermoelectric material layer;
131, P type thermoelectricity thin slice; 133, adhesive linkage;
132, N-type thermoelectricity thin slice; 13a, 13b, metallic film;
21, first group of separate slot; 22, second group of separate slot;
24, the 3rd group of separate slot; 25, trim slots;
30, emery wheel; 10a, pane;
10b, pane; 10c, strip shaped electric poles;
10d, strip shaped electric poles; 41,44,45,46 Metallic rod;
42,43,47,48 bolts; 111,121 solders;
40, fixture.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are described in detail, but the multitude of different ways that the present invention can be defined by the claims and cover is implemented.
The manufacture method of the electrothermal module of one embodiment of the invention is as follows:
1) P, N-type block thermoelectric material are cut into thin slice respectively, the thickness of thin slice equals the width of the thermoelectric arm made substantially.The thermoelectricity sheet thickness utilizing general semiconductor scribing machine to cut is generally more than 50 microns, and can select according to design needs, in addition, the thickness of P, N-type thin slice does not require unanimously.
2) what P, N-type thermoelectricity thin slice are replaced lines up and fixes.Fixing method can be that mechanical grip or high-temp glue are bonding, but is not limited to this two kinds of methods:
Fig. 1 provides the fixing means of a kind of P, N-type thermoelectricity wafer array: namely utilize special fixture 40 machinery made fixing.Fixture is made up of four Metallic rod 41,44,45,46 with slide rail, and each Metallic rod is connected on adjacent metalwork by the sliding sleeve with set bolt 42,43,47,48 fixed thereon, changes the size of fixed range by free sliding.During use, P, N-type thermoelectricity thin slice are fixed tightly in fixture 40 inside and weld, unclamp bolt 42,43,47,48 after welding and remove fixture 40, then thermoelectric material is completely fixed by two ends metal level.
Fig. 2 provides the fixing means of another kind of P, N-type thermoelectricity wafer array: utilize high-temperature plastic to carry out bonding, with the structure forming P, N-type thermoelectricity thin slice 131,132 is fixed together by adhesive linkage 133.The benefit of the method is that contrast locating is easier to, and high-temp glue needs can the follow-up welding procedure temperature of short-term tolerance, can adopt the commercial adhesives such as inorganic adhesive or polyimides.The bonding agent being in thermoelectric material seam crossing can be removed in follow-up cutting process, therefore can not impact the use of electrothermal module.
3) P, N thermoelectricity wafer array upper and lower surface fixed is polished, polishing, and complete metallization---namely plate one deck specific metallic film 13a, 13b, its method can select chemical plating, plating or sputtering plating etc., namely forms a coat of metal to improve intensity and the conductivity of weld layer.
If the manufacturer of thermoelectric material has carried out metallizing, without the need to this technique to block materials.Metallized material can select nickel, gold, titanium etc., wherein nickel not only effectively but also cheapness be most preferably scheme.The thickness of metal layer is at several microns to tens microns.
4) as shown in Figure 3, after metallization, thermoelectric material layer 13 upper and lower surface is welded in the sheet metal (for the formation of electrode layer 11,12) of coated with solder or soldering paste 111,121, metal described in formation-thermoelectric material-metal " sandwich " structure, hereinafter referred to as thermoelectric pile 10.
5) by the upper surface of the thermoelectric pile 10 of the sandwich of acquisition and lower surface polishing;
6) as shown in Figure 4, carry out cutting (transverse direction) at the upper surface of thermoelectric pile 10, cutter spacing equals the thickness of thermoelectric arm, and can need to determine according to the design of module, the degree of depth is for just cutting diathermanous material layer reaches lower metal layer, to form first group of separate slot 21.
7) as shown in Figure 5, again cut (longitudinal direction) according to the direction vertical with last time at upper surface, cutter spacing is P, N two thermoelectric material sheet width sums (as thermoelectric pile is made by adhering method, then also comprising thickness of adhibited layer), the degree of depth is constant, to form second group of separate slot 22.
8) as shown in Figure 6, (longitudinal direction) is cut according to the direction parallel with last time in the lower surface cutting of thermoelectric pile, cutter spacing is still for the width sum of the thin slice of P, N two thermoelectric materials is (as thermoelectric pile is made by adhering method, then also comprise thickness of adhibited layer), but with stagger the distance of half cutter distance in the position of cutting last time, the degree of depth is for just cutting diathermanous material layer reaches metal level, to form the 3rd group of separate slot 24.
After completing above-mentioned three cuttings, the making of thermoelectric arm completes, and each P, N-type thermoelectric arm separate.The making of top electrode also completes, and metal electrode is divided into Rectangular boxes, connects two kinds of dissimilar thermoelectric materials.
9) as shown in Figure 7, after above-mentioned operation, bottom electrode is longitudinally cut open, but laterally also links together, and therefore need again transverse cuts to cut lower metal layer, this step is called that bottom electrode is repaired, to form one group of trim slots 25.Wherein, suitable lower cutter position and depth of cut can be calculated according to the relation between the thickness of thermoelectricity thin slice and abrasive cut-off wheel 30 diameter, the cutting depth of cut and stroke need strict setting, to ensure that all electrodes are all cut into pane 10b except strip shaped electric poles 10c, the 10d on both sides.Position and the position shown in Fig. 4 of cutting are completely corresponding, namely mutually run through.
The electrothermal module upper surface electrode finally made is pane 10a, as shown in Figure 8, each pane 10a is a thermoelectric unit, thus forms the thermoelectric unit of two-dimensional array, lower surface electrode is also pane 10b except strip shaped electric poles 10c, the 10d on both sides, as shown in Figure 9.Electrothermal module has altogether (for the first time cutter number+1), and * (second time cutter number+1) to thermoelectric arm, namely has the array of (for the first time cutter number+1) * (second time cutter number+1) individual thermoelectric unit.
Electric characteristic is (for the first time cutter number+1) group, and often group (second time cutter number+1), in parallel again after thermoelectric arm series connection, needs to design according to final output performance.In use this electrothermal module is from two outside power outputs of strip shaped electric poles 10c, 10d of lower surface or pass into electric current, as shown in Figure 10.The output method of attachment of this Minitype thermoelectricity module is respectively draw a lead-in wire from the optional position of lower surface two long limit electrodes.Can obviously find out from Figure 10, two strip shaped electric poles 10c, 10d correspond to head and the tail two thermoelectricity thin slices of thermoelectric pile.
Method by machine cuts of the present invention completes the making of thermoelectric arm and metal connecting electrode, and the method for prior art cutting makes thermoelectric pile, then uses extra microelectronic technique machined electrode.Therefore present invention saves technological process and the production line length of about half, reduce found the factory investment and operating cost.Simultaneously the technical threshold due to microelectronic industry and the competency profiling to workman higher, the present invention is easier to compared to existing technology at China's spread.
Gap width between thermoelectric arm of the present invention is the thickness of grinding wheel, as long as control the proper heat transfer area utilance that can obtain more than 70%, therefore thermoelectrical efficiency and power density are also higher.And prior art uses the film be plated on substrate to carry out lamination, finally remove substrate again, can leave a large amount of gaps between thermoelectric arm like this, effective heat transfer area is lower.This can cause the thermal radiation between thermoelectric arm to reduce operating efficiency, also makes power density not high.
It is to be noted can reversed order arbitrarily to three times of thermoelectric pile cuttings when making thermoelectric arm and connecting electrode.The finishing of bottom electrode also can be realized by other mechanical processing techniques: the such as method such as laser cutting, drill bit milling.Even if use sand-wheel slice cutting machine to cut, also can be realized by other step.When only needing the thermoelectric unit of one-dimensional array, operation 6(transverse cuts) and the finishing of operation 9(bottom electrode) omit.
After completing above-mentioned technique, carry out packaging process, after better simply encapsulation such as extraction electrode, paste potsherd at the upper surface of thermoelectric pile and lower surface.
According to the thermoelectric arm that above-mentioned operation is processed, in a preferred embodiment, the depth-width ratio of thermoelectric arm is between 5/1 ~ 10/1, the width of thermoelectric arm is between 50 μm to 500 μm, the electromotive force of each thermoelectric unit is between 1 ~ 10mv, along with the depth-width ratio of thermoelectric arm becomes large, narrowed width, technology difficulty can corresponding improve; And along with the depth-width ratio of thermoelectric arm diminish, width increase, difficulty of processing can corresponding reduction.
The sheet metal and thermoelectric material layer 13 that scribble solder 111,121 are compressed and thermal weld, sheet metal can select the contour conducting material of copper, aluminium, is wherein most preferably scheme with copper.Welding temperature is determined by solder, with higher than the serviceability temperature of electrothermal module and the tolerable temperature being no more than thermoelectric material be as the criterion.
The present invention adopts the technical scheme of directly processing block thermoelectric material, and the scheme that contrasts needs to synthesize pyroelectric film material voluntarily.The thin film thermoelectric materials of not batch sale in the market, but block materials forms industrial chain at home and abroad.This programme can allow manufacturer be absorbed in the processing of electrothermal module and the production technology without the need to considering thermoelectric material, and investment of founding the factory is less, and technical difficulty is lower.Meanwhile, block thermoelectric material also has higher thermoelectricity capability and ingredient stability usually, and the market price is also more cheap, is beneficial to the performance and economy that improve product.
It is pointed out that the metallization of thermoelectric material not necessarily will be carried out after making P, N thermoelectricity wafer array again, also can before cutting just by two of thermoelectric block body material laggard row metals of surface rubbing polishing.In addition, the welding procedure between sheet metal and thermoelectric material also can substitute by thermal bonding technique.In addition, the thermoelectricity thin slice that the thin slice that thermoelectric block body material cuts into also directly can make by the method such as electrophoretic deposition or flow casting molding substitutes.In addition, also can be electroplated by thermoelectric material layer 13 upper and lower surface after metallization or otherwise form layer of metal layer, with alternative metals sheet.
Below the structure of the Minitype thermoelectricity module that manufacturing method according to the invention obtains is described.
As shown in Fig. 6 to 10, Minitype thermoelectricity module comprises: thermoelectric pile 10, comprise the first electrode layer 11, the second electrode lay 12 and be folded in the P be alternately arranged therebetween, thermoelectric material layer 13 that N-type thermoelectricity thin slice is formed, wherein, thermoelectric pile 10 is at least included in the second group of separate slot 22 arranged between every two-layer thermoelectricity thin slice 131,132 and the 3rd group of separate slot 24 arranged between remaining two-layer thermoelectricity thin slice be close together, wherein, the groove depth of second group of separate slot 22 is for cutting the first electrode layer 11 and thermoelectric material layer 13 and arriving the second electrode lay 12; The groove depth of the 3rd group of separate slot 24 is for cutting the second electrode lay 12 and thermoelectric material layer 13 and arriving the first electrode layer 11.Thermoelectric pile also comprise first group of separate slot 21 and one group of trim slots, 25, first group of separate slot 21 parallel with the orientation of the thermoelectricity thin slice of thermoelectric material layer 13 with the bearing of trend of one group of trim slots 25 or intersect, thermoelectric pile 10 to be separated into the thermoelectric unit of two-dimensional array.
In the present invention, P, the N-type thermoelectricity thin slice 131,132 of thermoelectric material layer 13 in thermoelectric pile 10 for being alternately arranged, namely along the orientation of thermoelectricity thin slice, adjacent with P type thermoelectricity thin slice is N-type thermoelectricity thin slice, and adjacent with N-type thermoelectricity thin slice is P type thermoelectricity thin slice.P, N-type thermoelectricity thin slice along the upper surface of orientation and electrode layer 11, the 12(such as metal level of lower surface) for the formation of being connected electric level, the thermoelectricity thin slice 131,132 between the electrode layer 11,12 of upper and lower surface is for the formation of thermoelectric arm.
Compared with other manufacture crafts, present invention process feature is the connecting electrode be simultaneously processed to form between thermoelectric arm and thermoelectric arm.
The present invention adopts the mode of cutting to process separate slot, so only adopts conventional machining just can realize the mass production of submillimeter level Minitype thermoelectricity module.Not only eliminate the buying of high-accuracy mechanical process equipment, also reduce required processing step, whole activities in production of this product have been limited to standard machinery and have manufactured field.The not only required cost of this technique drops into lower, and requires also lower to the professional ability of workman and degree of being skilled in technique, and will obviously reduce technology and the capital threshold of Minitype thermoelectricity module manufacturing and the production cost of product after being therefore widely adopted.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a manufacture method for Minitype thermoelectricity module, is characterized in that, comprises the following steps:
Bulk thermoelectric material is cut into thermoelectricity thin slice;
Thermoelectricity thin slice is arranged according to the order that P, N replace and fixes;
Be parallel to the orientation of thermoelectricity thin slice and the first surface be oppositely arranged and second surface making metal level; And
Precision gas cutting machine is adopted to cut described first surface and second surface, wherein, described first surface longitudinally cut out the degree of depth be just touch lower metal layer some row separate slots and longitudinally to cut out the degree of depth at described second surface be the some row separate slots just having touched metal level, to form the Minitype thermoelectricity module with multiple thermoelectric unit.
2. the manufacture method of Minitype thermoelectricity module according to claim 1, it is characterized in that, thermoelectricity thin slice is arranged according to the order that P, N replace and fixedly comprises: utilize mechanical clamp to be fixed by described thermoelectricity thin slice and remove described mechanical clamp after welding or plating layer of metal layer.
3. the manufacture method of Minitype thermoelectricity module according to claim 1, is characterized in that, is arranged by thermoelectricity thin slice and fixedly comprise according to the order that P, N replace: be mutually adhesively fixed by thermoelectricity thin slice by the mode of gummed.
4. the manufacture method of Minitype thermoelectricity module according to claim 1, it is characterized in that, thermoelectricity thin slice is arranged according to the order that P, N replace and also comprises after the step of fixing: to be parallel to thermoelectricity thin slice orientation first surface and second surface polishes, polishing and metallization.
5. the manufacture method of Minitype thermoelectricity module according to claim 1, it is characterized in that, make layer of metal layer respectively at the first surface of orientation and second surface that are parallel to described thermoelectricity thin slice to comprise: described first surface and described second surface are all welded with the metallic plate scribbling solder, wherein, described metallic plate forms metal level.
6. the manufacture method of Minitype thermoelectricity module according to claim 1, it is characterized in that, make layer of metal layer respectively at the first surface of orientation and second surface that are parallel to described thermoelectricity thin slice and comprise: form layer of metal layer at described first surface and described second surface respectively by plating.
7. the manufacture method of Minitype thermoelectricity module according to claim 1, it is characterized in that, also be included in described first surface transversely cut out respectively the degree of depth be just touch lower metal layer some row separate slots and cut out bottom electrode at described second surface, wherein, except the strip shaped electric poles on both sides, all electrodes are all cut into pane, and its depth of cut is the described metal level only cut on described second surface.
8. the manufacture method of Minitype thermoelectricity module according to claim 7, is characterized in that, encapsulates after being also included in two described strip shaped electric poles extraction lead-in wires of described bottom electrode to described Minitype thermoelectricity module.
9. the manufacture method of Minitype thermoelectricity module according to claim 8, it is characterized in that, the described some row separate slots longitudinally cut out at described first surface for separating thermoelectric unit, at the described some row separate slots longitudinally cut out at described second surface for separating two thermoelectric arms of thermoelectric unit.
10. a Minitype thermoelectricity module, is characterized in that, the manufacture method of described Minitype thermoelectricity module Minitype thermoelectricity module according to any one of claim 1 to 9 obtains.
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| CN110783448B (en) * | 2019-07-30 | 2020-10-16 | 武汉理工大学 | Method for manufacturing micro thermoelectric device based on femtosecond laser technology |
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| CN101436641A (en) * | 2008-12-12 | 2009-05-20 | 清华大学 | Method for preparing minitype thermoelectric device with high aspect specific heat electric arm |
| CN102810626A (en) * | 2011-06-03 | 2012-12-05 | 清华大学 | Precision machining based manufacturing method of minisize thermoelectric device |
| CN103311429A (en) * | 2013-06-17 | 2013-09-18 | 中国华能集团清洁能源技术研究院有限公司 | Micro thermoelectric module and production method thereof |
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