CN102810626A - Precision machining based manufacturing method of minisize thermoelectric device - Google Patents
Precision machining based manufacturing method of minisize thermoelectric device Download PDFInfo
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- CN102810626A CN102810626A CN2011101496119A CN201110149611A CN102810626A CN 102810626 A CN102810626 A CN 102810626A CN 2011101496119 A CN2011101496119 A CN 2011101496119A CN 201110149611 A CN201110149611 A CN 201110149611A CN 102810626 A CN102810626 A CN 102810626A
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Abstract
The invention discloses a precision machining based manufacturing method of a minisize thermoelectric device, belonging to the field of micromachining of function materials and device integration. The core of the process is the manufacture of a thermoelectric pile (thermoelectric arm array). The precision machining based manufacturing method of the minisize thermo-electric device particularly comprises the following steps of: firstly respectively processing a series of parallel grooves on P and N type thermoelectric block sheets by utilizing a precision cutting method, then inserting and combining under the lubrication of epoxy resins; and then cutting a series of parallel grooves along directions perpendicular to the grooves after solidification and filling the epoxy resins into the series of parallel grooves so as to manufacture two-dimensionally distributed thermoelectric arm arrays through polishing after the solidification. Thus, the millimeter-scale minisize thermoelectric device suitable for a portable type power supply or microcell refrigeration can be manufactured through subsequent electrode manufacture and encapsulation processes.
Description
Technical field
The invention belongs to the little processing and the device integration field of functional material, be specifically related to a kind of based on precision machined minisize thermoelectric device manufacture method.
Background technology
Thermoelectric device is meant the electron-like element that can realize directly that electric energy and heat energy are changed each other, the electrothermal module that its core is got up to form by the thermoelectric material connection in series-parallel of many groups of different carrier types.Therefore compare traditional internal combustion engine generator and air cycle refrigeration machine, the main advantage of thermoelectric device is simple in structure, does not have moving-member (also friction noise), and is easy to miniaturization, microminiaturization; Inferior position is that energy conversion efficiency is relatively low when high-power applications.Microminiaturized thermoelectric device not only occupies relative advantage in conversion efficiency; And can be in the heat radiation of photoelectric cell, electronic chip; And based on the technological new application of aspects such as micro power, microcell accurate temperature controlling and biomedicine acquisition of MEMS (microelectromechanical systems, MEMS).
The basic structure of thermoelectric device is the thermoelectric arm array that the thermoelectric material (P type, N type) with positive and negative charge carrier is composed in series by some.Power output during work is the summation of P type, n type material power.The making step of general thermoelectric device is the shape that earlier block thermoelectric material is cut into thermoelectric arm, is arranged into array according to P type, the staggered mode of N type again.Yet this process runs into two main difficulties when processing minisize thermoelectric device: the first, and the common intensity of thermoelectric material is lower, and processing characteristics is also relatively poor, so the lower size limit of minisize thermoelectric arm and machining accuracy all are restricted; The second, even processed miniature thermoelectric arm, with its also higher technology and human cost of needs of lining up regularly.And the present invention can address these problems preferably.
Summary of the invention
The purpose of this invention is to provide a kind of based on precision machined minisize thermoelectric device manufacture method, its main feature be through cutting-insert embedding compound-mode of cutting again realizes the processing of thermoelectric arm and arranging of array synchronously, saved technology and human cost.Simultaneously, thermoelectric thin slice has received the support and the protection of epoxy resin when cutting owing to the second time, so thermoelectric arm can obtain higher miniaturization degree and machining accuracy.
A kind of based on precision machined minisize thermoelectric device manufacture method, this method comprises the steps:
(1) utilizes the precise cutting method to process the series of parallel groove at P type, the laminar thermoelectric block body material of N type on the surface respectively earlier, make the slotting embedding of P type and N type thin slice compound down at the lubricated of epoxy resin then, and carry out cured, obtain compound foil;
(2) with one of them surface finish of compound foil, on this surface, the edge cuts out the series of parallel groove with the vertical direction of step (1) cut direction, and inserts epoxy resin then, solidifies the back and forms minisize thermoelectric arm array;
(3) make the electrode of thermoelectric arm array that is connected in series, and be packaged into the minisize thermoelectric device.
The thickness of described P type and the laminar thermoelectric block body material of N type is 1～2 millimeter.
Step (1) and the identical epoxy resin of (2) middle employing, the epoxide number of epoxy resin is 35～45.
The degree of depth of step (1) further groove is 0.3～1 millimeter, and width is 50～200 microns, and the space distance is 80%～90% of a recess width.
Generally to compound foil be polished to the slotting embedding composite portion of exposing P type and N type during step (2) polishing.
The degree of depth of step (2) further groove is 0.3～0.8 millimeter, and width is 50～500 microns, is spaced apart 50～500 microns.
In step (1) and the step (2), be more than 24 hours curing time.
The making of electrode comprises the steps: a surface finish with the thermoelectric arm array in the step (3); Utilize the method for ultraviolet photolithographic on this surface, to produce the mask of photoresist then; Utilize the part of exposing in the method etching mask of plasma etching again, utilize the method for magnetron sputtering to produce this lip-deep electrode subsequently; Profit uses the same method and makes the electrode of thermoelectric arm array another side.
Electrode is nickel-copper laminated film, and wherein, nickel is in bottom (pressing close to thermoelectric arm), and thickness is 0.1～0.5 micron; Copper is on the top layer, and thickness is 3～10 microns; Electrode be shaped as square, the length of side equals the groove interval each other of cutting in the step (1).
The resin compounded step has play a part crucial in this manufacture method.At first; In cutting process; Resin has played the location and improved intensity thermoelectric arm: this makes the cutting of thermoelectric arm and array arrange and can once accomplish simultaneously, and when step (2) is cut owing to the filling and the bonding effect of resin, cut out intact high aspect ratio thermoelectric arm easily.Secondly, in device used, because resin is the good insulator (be about thermoelectric material 1/6) of electricity and heat, so the existence of resin can not influence the power conversion power and the efficient of device basically, possibly improve the whole suppleness and the reliability of device on the contrary.
Beneficial effect of the present invention is: through cutting-insert embedding compound-mode of cutting again realizes the processing of thermoelectric arm and arranging of array synchronously, and is easy and simple to handle, saved technology and human cost; Because thermoelectric thin slice has received the support and the protection of epoxy resin during cutting; Therefore thermoelectric arm can obtain higher miniaturization degree and machining accuracy; Can the microminiaturized degree in thermoelectric arm cross section be reached below 100 microns; The machining accuracy error reaches below 10 microns, and the aspect ratio of thermoelectric arm reaches more than 3, and the maximum set Cheng Du of device reaches 10000 every square centimeter more than the thermoelectric arm.
Description of drawings
Fig. 1 is a main making flow chart of the present invention: (a) the reeded P type of Surface Machining, N type thin slice; (b) with gained surface behind the wherein mirror polish of P type and N type compound foil; (c) with gained surface behind the mirror polish of minisize thermoelectric arm array; (d) the A face electrode of making, the B face electrode of (e) making;
Fig. 2 is used for connecting the making flow process of electrode of minisize thermoelectric arm array;
Fig. 3 is the light micrograph of the thermoelectric arm array of the different scale made;
Fig. 4 is the thermoelectric arm array of the minisize thermoelectric device made and the light micrograph of connection electrode;
The local high power of Fig. 5 electrode is amplified microscopic appearance.
Embodiment
Through specific embodiment the present invention is done further detailed description below, but content of the present invention is not limited only to content related among the embodiment.
The present invention mainly realizes through two steps: the first step utilize earlier cutting-insert embedding compound-method of cutting again makes the compound minisize thermoelectric arm array of epoxy resin, second step was to utilize micro-machined method such as ultraviolet photolithographic, plasma etching and magnetron sputtering to make the electrode of the thermoelectric arm that is connected in series.
Concrete preparation technology is following:
(1) as shown in Figure 1; Utilizing accurate scribing machine is that to cut out the degree of depth respectively be 0.3～1 millimeter for 1～2 millimeter P type and the laminar thermoelectric block body material of N type surface at two thickness; Width is 50～200 microns, and the space is 80%～90% a series of parallel groove of width, and the interval of groove is slightly less than the width of groove; Its objective is in order closely to insert embedding; Under epoxide number is the lubrication of 35～45 epoxy resin, insert embedding then and combine, and solidify more than 24 hours, obtain the compound foil of P type and N type thermoelectric material.
(2) with one of them surface finish of compound foil to the slotting embedding composite portion of exposing P type and N type; Cutting out the degree of depth in this surperficial upper edge with the vertical direction of cut direction last time then is 0.3～0.8 millimeter; Width is 50～500 microns; Be spaced apart 50～500 microns series of parallel groove, and insert with step (1) in identical epoxy resin cure more than 24 hours, form minisize thermoelectric arm array.
(3) as shown in Figure 2; Surface of thermoelectric arm array (thermoelectric pile) polishing that will be good with resin compounded, the coated feel optical cement, and pass through exposure and develop to obtain the pattern of A face electrode; Utilize argon plasma bombardment clean surface; Magnetron sputtering nickel-copper combination electrode then utilizes the wet method technology of removing photoresist to remove photoresist, and encapsulates the A face with resin and silicon chip; Profit uses the same method and makes the electrode of B face, and encapsulation, just can produce the minisize thermoelectric device of the mm-scale that is applicable to compact power or microcell refrigeration.
Wherein, the nickel dam of nickel-copper combination electrode contacts with thermoelectric material, and thickness is 0.1～0.5 micron, and effect is the bonding force that improves electrode and material, and stops copper in thermoelectric material, to spread, and the thickness of copper is 3～10 microns, and effect provides high electricity and leads.
(1) utilizing accurate scribing machine is that to cut out the degree of depth respectively be 0.6 millimeter for 2 millimeters P type and the laminar thermoelectric block body material of N type surface at thickness; Width is 200 microns; The space is 180 microns a series of parallel groove; Under the lubrication of epoxy resin (epoxide number is 44), insert embedding then and combine, and solidified 24 hours, obtain the compound foil of P type and N type thermoelectric material.
(2) with one of them surface finish of compound foil to the slotting embedding composite portion of exposing P type and N type (polishing fall thickness be 1.4 millimeters); Then in this surperficial upper edge and step (1) the vertical direction of cut direction to cut out the degree of depth be 0.6 millimeter; Width is 200 microns, is spaced apart 400 microns series of parallel groove, and inserts the curing 24 hours of epoxy resin (epoxide number is 44); Form minisize thermoelectric arm array, shown in Fig. 3 (a).
(3) surface of thermoelectric arm array polishing that will be good with resin compounded; The coated feel optical cement; And pass through exposure and develop to obtain the pattern of A face electrode, utilize argon plasma bombardment clean surface, magnetron sputtering nickel-copper combination electrode then; Utilize the wet method technology of removing photoresist to remove photoresist, and encapsulate the A face with resin and silicon chip; Profit uses the same method and makes the electrode of B face, and is packaged into the minisize thermoelectric device.Wherein, the length of side of the compound series connection electrode of the nickel-copper of making is 0.18 millimeter, and nickel layer thickness is 0.2～0.25 micron, and copper layer thickness is 7～7.5 microns.
(1) utilizing accurate scribing machine is that to cut out the degree of depth respectively be 0.5 millimeter for 2 millimeters P type and the laminar thermoelectric block body material of N type surface at thickness; Width is 100 microns; The space is 80 microns a series of parallel groove; Under epoxide number is the lubrication of 44 epoxy resin, insert embedding then and combine, and solidify more than 24 hours, obtain the compound foil of P type and N type thermoelectric material.
(2) with one of them surface finish of compound foil to the slotting embedding composite portion of exposing P type and N type; Cutting out the degree of depth in this surperficial upper edge with the vertical direction of cut direction last time then is 0.4 millimeter; Width is 150 microns, is spaced apart 200 microns groove, and inserts identical epoxy resin cure more than 24 hours; Form minisize thermoelectric arm array, shown in Fig. 3 (b).
(3) surface of thermoelectric arm array polishing that will be good with resin compounded; The coated feel optical cement; And pass through exposure and develop to obtain the pattern of A face electrode, utilize argon plasma bombardment clean surface, magnetron sputtering nickel-copper combination electrode then; Utilize the wet method technology of removing photoresist to remove photoresist, and encapsulate the A face with resin and silicon chip; Profit uses the same method and makes the electrode of B face and encapsulation.Wherein, the length of side of the compound series connection electrode of the nickel-copper of making is 0.08 millimeter, and nickel layer thickness is 0.4～0.45 micron, and copper layer thickness is 6～6.5 microns.
(1) utilizing accurate scribing machine is that to cut out the degree of depth respectively be 0.8 millimeter for 1.5 millimeters P type and the laminar thermoelectric block body material of N type surface at thickness; Width is 200 microns; The space is 170 microns a series of parallel groove; Under epoxide number is the lubrication of 36 epoxy resin, insert embedding then and combine, and solidify more than 24 hours, obtain the compound foil of P type and N type thermoelectric material.
(2) with one of them surface finish of compound foil to the slotting embedding composite portion of exposing P type and N type; Cutting out the degree of depth in this surperficial upper edge with the vertical direction of cut direction last time then is 0.7 millimeter; Width is 200 microns, is spaced apart 400 microns groove, and to insert epoxide number be that 36 epoxy resin cure is more than 24 hours; Form minisize thermoelectric arm array (Fig. 4 (a), (b)).
(3) surface of thermoelectric arm array (thermoelectric pile) polishing that will be good with resin compounded; The coated feel optical cement; And pass through exposure and develop to obtain the pattern of A face electrode, utilize argon plasma bombardment clean surface, sputter nickel-copper combination electrode then; Utilize the wet method technology of removing photoresist to remove photoresist, and encapsulate the A face with resin and silicon chip; Profit uses the same method and makes the electrode of B face, and is packaged into the minisize thermoelectric device.
The length of side of the compound series connection electrode of making of nickel-copper (Fig. 4 (c), (d)) is 170 microns, and nickel layer thickness is 0.35～0.4 micron, and copper layer thickness is 4～4.5 microns.The sectional area of every thermoelectric arm is 0.07 square millimeter, and length is 0.6 millimeter.The local high power that is illustrated in figure 5 as single electrode is amplified microscopic appearance.
The above; Be merely the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; The variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (10)
1. one kind based on precision machined minisize thermoelectric device manufacture method, and it is characterized in that: this method comprises the steps:
(1) utilizes the precise cutting method to process the series of parallel groove at P type, the laminar thermoelectric block body material of N type on the surface respectively earlier, make the slotting embedding of P type and N type thin slice compound down at the lubricated of epoxy resin then, and carry out cured, obtain compound foil;
(2) with one of them surface finish of compound foil, on this surface, the edge cuts out the series of parallel groove with the vertical direction of step (1) cut direction, and inserts epoxy resin then, solidifies the back and forms minisize thermoelectric arm array;
(3) make the electrode of thermoelectric arm that is connected in series, and be packaged into the minisize thermoelectric device.
2. method according to claim 1 is characterized in that: the thickness of described P type and the laminar thermoelectric block body material of N type is 1～2 millimeter.
3. method according to claim 1 is characterized in that: the degree of depth of the described groove of step (1) is 0.3～1 millimeter, and width is 50～200 microns, and the space distance is 80%～90% of a recess width.
4. method according to claim 1 is characterized in that: will compound foil be polished to the slotting embedding composite portion of exposing P type and N type when polishing in the step (2).
5. method according to claim 1 is characterized in that: the degree of depth of the described groove of step (2) is 0.3～0.8 millimeter, and width is 50～500 microns, is spaced apart 50～500 microns.
6. method according to claim 1 is characterized in that: step (1) and the identical epoxy resin of the middle employing of step (2), the epoxide number of epoxy resin is 35～45.
7. method according to claim 1 is characterized in that: in step (1) and the step (2), be more than 24 hours curing time.
8. method according to claim 1; It is characterized in that: the making of electrode described in the step (3) comprises the steps: the wherein one side surface finish with the thermoelectric arm array; Utilize the method for ultraviolet photolithographic on this surface, to produce the mask of photoresist then; Utilize the part of exposing in the method etching mask of plasma etching again, utilize the method for magnetron sputtering to produce this lip-deep electrode subsequently; Profit uses the same method and makes the electrode of thermoelectric arm array another side.
9. method according to claim 1 is characterized in that: electrode is nickel-copper laminated film, and nickel is at bottom, and thickness is 0.1～0.5 micron, and copper is on the top layer, and thickness is 3～10 microns.
10. according to claim 1,8 or 9 described methods, it is characterized in that: electrode be shaped as square, the length of side equals the groove interval each other of cutting in the step (1).
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| CN103280519A (en) * | 2013-06-17 | 2013-09-04 | 中国华能集团清洁能源技术研究院有限公司 | Minitype thermoelectricity module and manufacturing method thereof |
| CN109399548A (en) * | 2017-08-17 | 2019-03-01 | 南京理工大学 | A kind of device and preparation method thereof automatically replying stable ultra-hydrophobic state |
| CN109755378A (en) * | 2017-11-02 | 2019-05-14 | 英飞凌科技股份有限公司 | Thermo-electric device and the method for being used to form thermo-electric device |
| CN111656546A (en) * | 2018-01-23 | 2020-09-11 | Lg伊诺特有限公司 | Thermoelectric module |
| CN112420912A (en) * | 2020-11-20 | 2021-02-26 | 武汉理工大学 | Manufacturing method of micro thermoelectric device |
| CN112703611A (en) * | 2018-09-11 | 2021-04-23 | Lg 伊诺特有限公司 | Thermoelectric element |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103280519A (en) * | 2013-06-17 | 2013-09-04 | 中国华能集团清洁能源技术研究院有限公司 | Minitype thermoelectricity module and manufacturing method thereof |
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| CN111656546A (en) * | 2018-01-23 | 2020-09-11 | Lg伊诺特有限公司 | Thermoelectric module |
| CN111656546B (en) * | 2018-01-23 | 2024-04-16 | Lg伊诺特有限公司 | Thermoelectric module |
| CN112703611A (en) * | 2018-09-11 | 2021-04-23 | Lg 伊诺特有限公司 | Thermoelectric element |
| CN112420912A (en) * | 2020-11-20 | 2021-02-26 | 武汉理工大学 | Manufacturing method of micro thermoelectric device |
| CN112420912B (en) * | 2020-11-20 | 2022-07-08 | 武汉理工大学 | Manufacturing method of micro thermoelectric device |
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