CN103262274A - 高频压电晶体复合材料、用于制造其的装置和方法 - Google Patents
高频压电晶体复合材料、用于制造其的装置和方法 Download PDFInfo
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- CN103262274A CN103262274A CN2011800473480A CN201180047348A CN103262274A CN 103262274 A CN103262274 A CN 103262274A CN 2011800473480 A CN2011800473480 A CN 2011800473480A CN 201180047348 A CN201180047348 A CN 201180047348A CN 103262274 A CN103262274 A CN 103262274A
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Abstract
本发明一般涉及高频压电晶体复合材料、用于制造高频压电晶体复合材料的装置和方法。在适应性的实施方案中,包含成像换能器组件的用于高频(>20MHz)应用的改进的成像装置、尤其是医学成像装置或距离成像装置与信号图像处理器耦合。另外,所提出的发明提供了用于基于光刻法的微加工压电晶体复合材料的***及其使得性能参数改进的应用。
Description
相关申请的交叉引用
本申请要求于2010年10月13日递交的美国临时申请序号61/344,801的优先权,该申请通过引用合并于本文中。
技术领域
本发明涉及在高频(>20MHz)下工作的压电晶体和压电晶体复合材料的领域。更特别地,本发明提供了优选地用于工业和医疗超声应用的用于高分辨率成像的高频压电晶体复合材料,并且甚至更特别地提供了制造所述高频压电晶体复合材料的方法。
背景技术
通常,基于PMN-PT的压电单晶体与传统的PZT陶瓷相比具有优越的介电和压电特性。为了更加全面地利用单晶体的优良特性,已经制造出晶体复合材料以提高电磁耦合系数以及因此提供换能器性能特性。
对于超声换能器,工作频率与压电材料的厚度成反比相关。因此,随着目标工作频率增加,压电材料的厚度相应地减小,这造成了操作上和机电上的难题。另一方面,为了保持压电复合材料的高的机电耦合系数,对于压电晶体柱已经尝试了最优的纵横比。为了适应厚度和纵横比的要求,在高频复合材料中压电材料的特征尺寸需要减小以满足最优的比率。
已经提供了用于大概由美国专利7,622,853(Rehrig等人,转让给SciMed Life Systems有限公司)获知的微加工成像换能器的这种医疗应用的一种尝试,该专利的全部内容通过引用合并于本文中。
如美国专利7,622,853中提到的,医疗装置设置有换能器组件,换能器组件包括使用光刻微加工法形成的压电合成板。其中提到了在’853专利中的特定步骤。’853专利另外提到了微加工电极的PZT陶瓷的常规难题,但是未能调整至下文提及的所理解到的难题并且另外包括了对电场的有害影响以及对应变的夹紧效应。现在理解到了对在不能达到的深度内的进一步成像分辨率和灵敏度的需要。
最后,进一步认识到,通常在与低频换能器相比较高的电场中驱动高频换能器。
因此,对于改进的高频压电晶体复合材料、用于制造所述高频压电晶体复合材料的任选的相关装置和进一步任选的方法存在需求。
相关公开包括下列公开,各公开的全部内容通过引用完全合并于本文中:
1.P.Han,W.Yan,J.Tian,X,huang,H.Pan,“Cut directions for theoptimization of piezoelectric coefficients of PMN-PT ferroelectric crystals”,Applied Physics Letters,86卷,第5号(2005).
2.S.Wang等人,“Deep Reactive Ion Etching of Lead Zirconate TitanateUsing Sulfur hexafluoride Gas”,J.Am.Ceram.Soc.,82(5)1339-1341,1999.
3.A.M.Efremov等人,“Etching Mechanism of Pb(Zr,Ti)O3Thin Films inCl2/Ar Plasma”,Plasma Chemistry and Plasma Processing2(1),pp.13-29,2004年3月.
4.S.Subasinghe,A.Goyal,S.Tadigadapa,“High aspect ratio plasma etchingof bulk Lead Zirconate Titanate”,in Proc.SPIE-Int.Soc.Opt.Engr,由Mary-Ann Maher,Harold D.Stewart和Jung-Chih Chiao编辑(San Jose,CA,2006),pp.61090D1-9.
发明概述
作为回应,现在认识到改进基于PMN-PT的压电晶体复合材料的本发明以及用于制造所需的复合晶体元件的方法并且在此处提供。
本发明一般涉及高频压电晶体复合材料,以及用于制造高频压电晶体复合材料的方法。在适应性的实施方案中,包括成像换能器组件的用于高频(>20MHz)应用的改进的成像装置、尤其是医学成像装置或距离成像装置与信号图像处理器耦合。另外,改进的发明提供了用于基于光刻法的微加工压电晶体复合材料的***及其使得性能参数提高的应用。
本发明另外涉及成像装置,尤其是医疗装置,并且特别地涉及用于所提出的晶体复合材料的新颖结构和复合晶体元件的改进的医学成像装置和***。
本发明的另一方案是,创新的制造方法使得商业生产晶体复合材料可行且实用。高频晶体复合材料(20MHz至>100MHz),以及厚度机电耦合因数k10.65-0.90能够用于性能显著提高的医学超声成像和诊断。高频晶体复合材料尤其能够应用于与皮肤、眼睛、血管内的、向内的、颅内的、腔内的或管腔内的医学诊断装置一起使用。这些装置可用于涉及皮肤病学超声、眼科学超声、腹腔镜检查超声、心内超声、血管内超声的应用。
本发明的另一方案认识到当换能器激励场也高时具有高矫顽场(EC)的晶体的使用。在本发明的一个可选的方案中,三元晶体Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3(PIN-PMN-PT)和其它基于PMN-PT的晶体被认识到具有比二元PMT-PT晶体改进的热特性和电特性。结果,本发明的可选的实施方案采用基于这些晶体的晶体复合材料,这些晶体复合材料现在被认识到继承了三元晶体的改进的特性。
在特定阀门的一个方案中,提供基于压电PMN-PT的晶体复合材料,其具有由公式:I:x*Pb(B’1/2B”1/2)O3-y*PbTiO3-(1-x-y)*Pb(Mg1/3Nb2/3)O3表示的晶体组成,其中x被限定为0.00至0.50的摩尔百分比;并且y被限定为0.00至0.50的摩尔百分比,B’表示铟(In)、镱(Yb)、钪(Sc)或铁(Fe),B”表示铌(Nb)或钽(Ta)。另外,公式I与如下添加剂组合:高达总分批重量的5%(wt%)的锰(Mn)和/或高达总分批重量的10%(wt%)的铈(Ce)。
在特定发明的一个方案中,提供基于压电PMN-PT的晶体复合材料,其具有由公式II:x*ABO3-y*PbTiO3-(1-x-y)*Pb(Mg1/3Nb2/3)O3表示的晶体组成,其中,x被限定为0.00至0.50的摩尔百分比;并且y被限定为0.00至0.50的摩尔百分比,A表示铅(Pb)或铋(Bi),B表示铟(In)、镱(Yb)、铁(Fe)、锆(Zr)、钪(Sc)、铌(Nb)、钽(Ta)或上述元素的组合。另外,公式II可与如下添加剂组合:高达总分批重量的5%(wt%)的锰(Mn)和/或高达总分批重量的10%(wt%)的铈(Ce)。
在本发明的另一方案中,通过包含基于光刻法的微加工的方法来制备具有上述公式I或II的压电晶体复合材料。
在本发明的发明的另一方案中,如本文所提到的,所提出的复合材料柱具有大于0.50、优选地大于1.0且更优选地大于2.0的柱高度(H)与有效柱宽度(W)的纵横比H∶W。
在发明的另一方案中,所提出的复合材料是混合式1-3构造的不连续六边形布置,并且压电晶体被(001)切割且沿<001>方向定极。
在本发明的另一方案中,所提出的复合材料是混合式1-3构造的不连续六边形布置,并且压电晶体被(011)切割且沿<011>方向定极,其中聚合填充线在远离方向+/-32.5°(+/-2.5°)的方向上延伸。
在本发明的另一方案中,所提出的复合材料为平行四边形混合式2-2/1-3构造,并且压电晶体被(011)切割且沿<011>方向定极,其中聚合填充线在远离方向+/-32.5°(+/-2.5°)的方向上延伸。
在结合附图阅读研究下面的说明时,本发明的上述以及其它的方案、特征、***、方法和优点对于本领域技术人员将变得显而易见,其中相似的附图标记表示相同的元件。目的在于,包括在本说明书内的所有这些附加的***、方法、特征、组成和细节在本发明的范围内并且受随附权利要求保护。
附图说明
图1为根据本发明的基于光刻法的微加工处理的流程图。
图2为用于对来自成像换能器的信号进行可操作地成像的与数字换能器信号信号处理器可操作地耦合的成像换能器布置的示例性的示意图。
图3为用于PMN-PT晶体的(011)平面(从纸面向外的平面)上的d31的计算值的2维绘图。图3表示微应变在曲线之间沿+/-32.5°的方向(见箭头)上完全为零。使用公式d’31=d31*Cos(θ)*Cos(θ)+d32*Sin(θ)*Sin(θ)来计算。
图4A为具有六边形结构、被<001>切割的用于换能器的混合式1-3晶体复合材料的示例的立体图,标注出方向取向以及环氧聚合物和晶体的标识,由于<001>切割使得对夹紧方向无影响。
图4B为依照本发明的优选实施方案的具有六边形结构、被<001>切割、厚度为30μm的用于换能器的图4A的1-3晶体复合材料的俯视SEM图像,其中黑色线被理解为填充有环氧聚合物的截口。
图5A为具有六边形结构的、被<011>切割的用于换能器的1-3晶体复合材料的示例性的立体图,标注出方向取向以及环氧聚合物和晶体的标识。
图5B为依照本发明的优选实施方案的具有六边形结构、被<011>切割、厚度为22μm的用于换能器的图5A的混合式1-3晶体复合材料的俯视SEM图像,其中黑色线为填充有环氧聚合物的截口。
图5C为如图5A和图5B中的六边形多边形布置的示例性的取向图,标注出截口取向处于所标出的30°,以及在30°和35°之间的夹紧方向,优选地距方向取向+/-32.5°。
图5D为与计算不方正的有效柱宽度有关的示例性的尺寸标注导向,此处由用于纵横比考虑的对角宽度和高度来计算平均宽度。
图6A为依照本发明的优选实施例的通过填充有环氧聚合物的截口使得横向夹紧效应最小化的具有平行四边形(菱形)结构的用于换能器的1-3晶体复合材料的示例性的立体图。
图6B为用于较高耦合因数的混合式1-3晶体复合材料(图6A)的(011)切割的示例性的平面图,其中使得横向填充有环氧聚合物的截口在+/-32.5°(+/-2.5°)且因此无应变。注释了夹紧效应方向。
图7B为依照本发明的优选实施方案的如图7A中的(011)切割的混合式2-2/1-3晶体复合材料的俯视的SEM图像。
发明详述
现在将详细地参照本发明的实施方案,在附图和说明书中相同或相似的附图标记尽可能地用于指代相同或相似的部件或步骤。附图为简化的形式而不是按精确的刻度。仅为了方便和清晰的目的,方向(上/下等)或运动(前/后等)术语可针对附图使用。这些和相似的方向术语不应被解释为以任何方式限制本发明的范围。
在本文中另外使用的,例如关于聚合(环氧)区域填充有压电非活性材料的本发明的图像,术语“截口”的使用不限于由任何类型的机械锯形成的区域,而是术语“截口”由本领域技术人员广义地理解为表示压电柱之间的接收聚合材料的区域,无论实际的区域是否由锯形成,或者是通过本文讨论的任何其它制造工艺形成。
另外,说明的方法(M-N标签惯例)用于描述压电材料和聚合材料的每个部分连续延伸的方向的数量,其中M表示压电(PMN-PT)材料延伸的连续方向的数量,并且N表示聚合(环氧)材料连续延伸的方向的数量。尽管技术人员理解该惯例,但是如本文所修改的,本文所指明的结构绝不是受约束于M-N惯例,因此申请人要求进行混合式理解,其中方向延伸通常仍保留,但是不连续或间断,例如,通过与沿不同而且也连续的方向延伸的交叉方向的聚合材料交叉。以此方式,将理解的是(如稍后描述)六边形结构包含不连续的、间断的或混合式的聚合(环氧)材料方向,其中聚合材料方向仅在沿着压电材料本身的长度的一个方向上是线性的,而其它聚合(环氧)方向由于遇到压电材料而是间断方向或不连续方向。本发明的一个实施方案进一步具有这样的结构:具有不连续或间断的侧部的压电材料元件与邻近的压电材料元件的相应的侧部/边缘对准的结果,使得侧部/边缘可以不共平面(在相同平面上)而是可以在平行的平面上延伸。本发明的又一实施方案不包含简单的规则单元元件(图7A-7C,例如),而是需要M-N惯例的另外的混合。
本发明涉及20MHz至>100MHz的高频压电单晶体复合材料/复合材料晶体元件及其制备工艺。新颖的高耦合因数的晶体复合材料能够广义地取代早期的材料,诸如用于高频换能器的压电陶瓷、单晶体和传统的晶体复合材料。
现在参照图1,讨论了基于光刻法的微加工工艺100的工艺流程。在第一步骤10中,压电单晶体材料(稍后示出)的板或块,诸如基于PMN-PT(铅镁铌酸盐-铅钛酸盐)的晶体,诸如二元固体溶液PMN-PT和三元固体溶液PIN-PMN-PT(铅铟铌酸盐-铅镁铌酸盐-铅钛酸盐)或PYbN-PMN-PT(铅镱铌酸盐-铅镁铌酸盐-铅钛酸盐)或者这些晶体上方有掺杂剂(Mn、Ce、Zr、Fe、Yb、In、Sc、Nb、Ta及其它)。这种基于PMN-PT压电晶体的三元晶体现在被认识到具有改进的热稳定性和允许具有较高的驱动电场的增强的矫顽场。
晶体复合材料和复合晶体元件具有新颖的特征和/或新的结晶切割方向。能够通过包括光刻法、深反应离子刻蚀、精密机械整饰和电极涂层的专有工序来制造晶体复合材料。
板(未显示)优选地叠接在两个侧部上并且在一个侧部上进行抛光。叠接和未抛光的侧部随后能够与玻璃载体(未显示)接合,玻璃载体与硅、Si、晶体(未显示)接合。板的规格在十(10)毫米(“mm”)×十(10)mm×0.20mm至1.20mm厚度的范围内;但是,规格可以为任何尺寸。
板的材料为具有沿着<001>或<011>结晶方向取向的电极面的单晶体。本领域普通技术人员将理解,单晶体结构能够期望地具有高的压电系数(例如,d33>2000pC/N,d33>0.8,d33’>0.7)。板优选地具有在近似4000至>7700范围内的介电常数以及小于0.01的介电损耗。
将理解的是,板压电单晶体为根据如下公式I或II形成的三元晶体:
公式I:x*Pb(B’1/2B”1/2)O3-y*PbTiO3-(1-x-y)*Pb(Mg1/3Nb2/3)O3,其中,x被限定为0.00至0.50的摩尔百分比;并且y被限定为0.00至0.50的摩尔百分比,B’表示铟(In)、镱(Yb)、钪(Sc)或铁(Fe),B”表示铌(Nb)或钽(Ta)。另外,公式I可与如下添加剂组合:高达总分批重量的5%(wt%)的锰(Mn)和/或高达总分批重量的10%(wt%)的铈(Ce)。
公式II:x*ABO3-y*PbTiO3-(1-x-y)*Pb(Mg1/3Nb2/3)O3,其中x被限定为0.00至0.50的摩尔百分比;并且y被限定为0.00至0.50的摩尔百分比,A表示铅(Pb)或铋(Bi),B表示铟(In)、镱(Yb)、铁(Fe)、锆(Zr)、钪(Sc)、铌(Nb)、钽(Ta)或上述元素的组合。另外,公式II可与如下添加剂组合:高达总分批重量的5%(wt%)的锰(Mn)和/或高达总分批重量的10%(wt%)的铈(Ce)。
公式I和II的多个非限制的实施例见于下面的表中。将理解的是,与公式I或II匹配的任何组成通过引用作为适当的组成包含在本文中。
在光刻法的第二个步骤20中,施加薄的金属(镍)籽层,然后在步骤30中,通过在籽层的顶部旋转涂覆光致抗蚀剂来制备掩模。掩模限定了压电复合材料内的期望形状和/或图案的成像元件。在烘培、UV曝光和显影之后,获得了图案化的光致抗蚀剂。
预定厚度(此处为10微米,但是可以为从1至30微米的任意厚度)的镍掩模电镀到上面以具有光致抗蚀剂的掩模的相反图案,然后利用反应离子刻蚀来将相反图案的光致抗蚀剂的掩模剥离。期望选择诸如Ni和Pt的硬的或高分子量的金属的使用以便保护板的被覆盖的下面区域免于后期被刻蚀。
使用所提到过的诸如反应离子刻蚀(“RIE”)的刻蚀工艺,但是可以使用其它刻蚀工艺,诸如湿法刻蚀。在一个优选的实施方案中,使用基于氯Cl2的RIE刻蚀,其具有近似从小于3微米/小时至12微米/小时的刻蚀速度并且能够得到大致竖直的刻蚀轮廓(例如,>89度)。作为Cl2的替代或者除Cl2外,可使用基于六氟化硫SF6的刻蚀,其具有与Cl2相似的刻蚀特性。镍Ni的图案保护板的由图案覆盖的下面的部分免于刻蚀处理。
在步骤40中,带有图案化的刻蚀掩模的晶体部分位于ICP等离子体单元中,以便使用优选的Cl2气体进行深反应离子刻蚀(DIRE)。由于步骤40,下文讨论的类型的一个或多个深柱形成在板中,一个或多个截口界定每个相应的柱,在板的未被覆盖部分中被刻蚀。一个或多个截口可具有在近似从小于一(<1)至十二(12)微米的范围内的宽度,并且优选地宽度从1至10微米。
相应的柱可具有范围从近似3至200(对于本文讨论的混合式2-2/1-3构造来说长度更长)微米的宽度并且具有在近似小于五(<5)至大于七十(>70)微米的高度,使得在一个实施方案中,优选的具有至少一的纵横比(柱高度/柱宽度)以削弱侧向模式的效应。对于上述板的尺寸,刻蚀工艺能够持续近似六(6)至八或十八(8或8)个小时。在刻蚀步骤40之后,然后用清洁溶剂来清洗板。
在下个步骤50中,截口填充有环氧树脂,诸如由Epo-Tek提供的Epoxy301,但是可以采用其它的环氧树脂而不偏离本发明的范围和主旨。真空装置(未显示)可用于去除气泡并且防止截口内的任何空隙。在下一步骤60中,在环氧树脂固化之后,板的顶部和环氧树脂被叠接成近似25微米的厚度。在步骤70中,电极图案随后施加到板上以形成成像换能器图案。电极图案优选地由金(Au)和/或铬(Cr)构成。而且,本领域普通技术人员将理解的是,诸如成像处理电路的电子电路(未示出)能够与电极(未示出)接合。此外,形成在板上的电极图案能够限定任何图案的成像换能器,包括阵列,例如,在每个柱处的成像换能器,或者单个成像换能器。环氧树脂层可施加到板的背部。
在另一步骤80中,板被适当地根据需要定尺寸并且然后在定极50VDC处。在步骤90中,通过适当的设备来测量和计算关键的介电和压电特性,例如用Agilent4294A Precision Impedance Analyzer。
能够利用基于光刻法的微加工(诸如上述工艺100)来开发具有20MHz(例如,30至>100MHz)的工作频率的成像换能器。较高的工作频率提高了成像换能器的分辨率和图像深度。此外,与由PZT陶瓷制成的<20MHz换能器的70%至80%相比,尤其当单晶体PMN-PT被用作压电材料时,成像换能器的带宽可接近100%。
较高的带宽提高了换能器的轴向分辨率,这增加了成像深度。这对于高频换能器是期望的,由于组织中高频超声的强衰减,高频换能器具有非常有限的成像深度。当使用单晶体时,这些优势能够以与陶瓷换能器等同或更佳的灵敏度来实现。这些高频换能器能够应用于多种医疗操作,包括:眼睛的前区的成像,用于监控手术操作,如晶状体替换的白内障治疗以及激光原位角膜切开术(LASIK)和肿瘤检测(优选地对于五十(50).mu.m分辨率达到六十(60)MHz);用于烧伤患者的护理的皮肤成像和黑素瘤检测(优选地对于皮下为二十五(25)MHz,对于真皮为五十(50)MHz,以及对于表皮为一百多(100+)MHz);用于检测关节炎前期状况的关节内成像(优选地为二十五(25)至五十(50)MHz);用于医学研究的体内鼠胚胎成像(优选地为五十(50)至六十(60)MHz);用于确定直径<一百(100).mu.m的血管中的血流的多普勒超声(优选地为二十(20)至六十(60)MHz);心内和血管内的成像(优选地为十(10)至五十(50)MHz);以及用于组织的活体检视的超声引导。
作为这种医疗装置的实施例,我们不是指图2,其中示例性的医学治疗换能器装置200包括换能器阵列(未示出),其与呈适用于某类型的导管或引导线的形式(显示为圆形)的本发明的压电柱(未示出)的示例性阵列(未示出)接合。示例性的引导线和信号导管220将所接收到的图像信号发送到计算机处理和成像***230以显示所接收到的成像信号。导管220可由为此目的可操作的任何常规形式形成。例如,其可由聚合物或金属构造形成并且包含多个信号或控制线以将治疗端与图像显示控制器可操作地接合。
本发明的发明人已经确定基于PMN-PT压电晶体通常使用(001)切割和定极<001>,这得到了最高的d33,但是不能避免由于填充到截口中的环氧树脂引起的侧向夹紧效应并且对于各种成像***和使用方法的性能极大地不利。我们首先使用六边形(“蜂巢”)型混合形状的1-3型晶体复合材料。优点的显著之处在于,如果两个压电有效容积相同,则该结构比方向图案机械上更强且更稳定。对于较大规模的制造更加实用/适合。
现在参照图3,确定为使(011)切割和定极的基于PMN-PT的晶体尤其适用于尤其高频的换能器。优点在于,如果沿+/-32.50°(+/-2.5°)的方向填充的截口在远离方向的方向上使用,则能够完全避免截口中的环氧树脂引起的侧向夹紧效应。
我们已经使公式(1)通过坐标旋转来来计算d31:
d’31=d31*Cos(θ)*Cos(θ)+d32*Sin(θ)*Sin(θ) (1)
图4A至4B的讨论为具有(001)切割的六边形混合式1-3晶体复合材料结构的示意性SEM图像。此处,“混合式”短语用于与使用第一时间不连续截口以及使用第一时间六边形晶体柱有关的M-N构造。结果,本发明的该方案是各向同性的,并且场/夹紧效应在任意方向上基本相同,因为截口与定极方向平行。图4A的立体图示出了用于不连续的或间断的聚合材料布置的方向性取向和混合式M-N布置。图4B的SEM图像被显示为具有30微米的厚度。如上所述,由于(001)切割和<001>方向的定极,夹紧效应在任意方向上(见示例性的箭头)基本均匀,并且压电晶体复合材料的可靠性大幅提高,因为故障方向必须是非线性的并且夹紧效应也不是方向相关的。
现在参照图5A和图5B,示出了具有完全新的(011)切割的六边形混合式1-3晶体复合结构的示意性和SEM图像。图5A的立体图示出了用于不连续的或间断的聚合材料布置的方向性取向和混合式M-N布置。此处,“混合式”短语用于与使用第一时间不连续截口以及使用第一时间六边形晶体柱有关的M-N构造,尤其是按(011)切割方向的新构造。图5B的SEM图像被显示为具有22微米的厚度。如上所述,由于(011)切割和在<011>方向处定极,夹紧方向期望地与方向成30-35°,并且优选地与方向成大约32.5°(+/-2.5°)。在该可选的实施方案中,至少一个截口被确保无任何夹紧效应,而压电晶体复合材料的可靠性大幅提高,因为故障方向必须为非线性的。
现在参照图5C,示出了标注出用于六边形混合式1-3构造的与方向成所标识的30°处的截口取向的示意性示例取向图,以及30°和35°之间的夹紧方向,以及优选地与方向成+/-32.5°的方向,如图5A和图5B中所标注的。还将理解的是,偏离指定方向同样的30°的理解适用于图4A和图4B,虽然是距不同的(001)切割方向。
现在参照图5D,其为与计算不方正的有效柱宽度有关的示例性的尺寸导向,此处为混合式1-3构造。如上所述,六边形或平行四边形构造指定了压电晶体材料的单一高度并且能够被测量出。关于每个剖视图,存在多个对角线(或者如六边形那样大致均匀或者如平行四边形那样非均匀)。在任一种构造中,进行多次宽度测量,并且计算平均值以用于确定纵横比(高度∶宽度),该纵横比优选地大于0.50,更优选地大于1.0,更优选地大于1.5或2.0。然而,每个理想的比值取决于其它的构造、组成细节以及装置或方法的要求。例如,一个优选的可选实施方案包括小于2的特定比值。作为进一步的细节,将注意到(图7A至7C的例如具有混合式2-2/1-3的构造),该纵横比不再适用。还将理解的是,通常所期望的截口宽度在1微米至10微米之间。
由于根据整篇文的细节制备这种复合材料,所以实现了0.65-0.90的厚度机电耦合因数k1。
现在参照图6A和图6B,可选的平行四边形混合式1-3构造被呈现为经过(011)切割和<011>定极方向,其中截口远离切割30-35°,并且优选地远离32.5+/-2.5°。该构造使得由于填充到平行四边形形状的晶体柱之间的截口中的环氧树脂引起的横向夹紧效应最小化。基于该混合式1-3构造,复合晶体提供了高的耦合因数,其中环氧树脂截口无横向应变。此处,“混合式”短语用于与在平行四边形图案中使用第一时间连续截口有关的M-N构造,截口相对于相应的平面成115°。该布置完全消除了侧向夹紧效应。
现在参照图7A至7C,此处,提供了另一不连续的混合式2-2/1-3构造的示意性的SEM和立体图,示出了重复的单元,其中晶体被(011)切割和<011>定极。如图形所示,截口填充线方向优选地远离方向30-50°且更优选地为32.5°(+/-2.5°)。由于该不连续的混合式2-2/1-3构造,使得夹紧方向(图示)对于性能不不利的影响。注意到,图7A、图7C中的白色空间和图7B中的黑色空间表示环氧或聚合材料,并且条表示压电材料注意到,横向延伸应变与<011>方向负平行并且与<011>方向正平行。
如本文所提到的,关于图7A至图7C,每个单独的单元构件(未示出)为用于平滑封装的独特的几何形状,而同时允许气体在环氧树脂灌注期间向外流出。每个单元构件包括沿第一方向从第一端延伸到第二端的中央细长的腹筋(图示)。相应的桥式构件或桥接部(图示)从相对侧(图示)上的细长腹筋并且在相应的第一端和第二端的中间垂直地延伸出,形成共四个桥式构件部分,在腹筋(图示)的每侧有两个。从四个桥式构件部分中的每个延伸出的是支腿条(图示),每个支腿条与腹筋平行并且与其间隔开截口的宽度。在该构造中,因此应理解,混合式2-2构造部分表示平行的腹筋和支腿条,每个由聚合材料间隔开,并且混合式1-3构造部分表示交叉的桥式构件和桥式构件部分与每个支腿条的端处的聚合材料交叉通道的交互作用。结果,本领域技术人员将认识到如结合附图全面地理解的混合式2-2/1-3构造。
将理解的是,先前提到的制造方法可用于制造具有含有本文示出的任何组成的任何混合式构造的一个或多个成像换能器,而不偏离整个公开的范围。将理解的是,组成可用于任何构造。
将理解的是,成像装置可如图2所示构造,并且可以含有本文图示的任何组成的任何混合式构造形成,而不偏离整个公开的范围。将理解的是,组成可用于任何构造。
将理解的是,词语六边形是在平面图中具有两个边缘或边的多边形,使得图示类型的六边形的多边形具有两个缘或边并且从初始位置延伸出。
将理解的是,存在多种不同类型的四边形(四个边)的多边形,并且均具有七个共同点:两个相对的边共平面,具有两个对角线,并且其四个内角之和等于360度,然而,如本文所提到的,本文所使用的词语平行四边形反映两对平行的相对边,而无直角,并且根据本领域技术人员的理解,菱形仅为具有等长度的边的平行四边形(并且还可称为“钻石”图案或斜菱形)。
已经参照附图对本发明的至少一个优选的实施方案进行了说明,本领域技术人员将显知,本发明不限于那些精确的实施方案,并且可以在当前公开的***中进行各种修改和变型,而不偏离本发明的范围或主旨。因此,目的在于使本公开涵盖该公开的修改和变型例,只要它们落在随附的权利要求书及其等同方案的范围内即可。作为另一实施例,一个实施方案的每个特征能够与其它实施方案中所示出的其它特征混合和匹配,并且类似的特征可添加或移除,使得本发明不被视为受除随附权利要求书外的限制。
Claims (14)
1.基于压电PMN-PT的晶体复合材料,所述压电晶体复合材料具有由如下公式表示的晶体组成:
x*Pb(B’1/2B”1/2)O3-y*PbTiO3-(1-x-y)*Pb(Mg1/3Nb2/3)O3;
其中,
x被限定为0.00至0.50的摩尔百分比;
y被限定为0.00至0.50的摩尔百分比;
B’表示铟(In)、镱(Yb)、钪(Sc)、锆(Zr)或铁(Fe);并且
B”表示铌(Nb)或钽(Ta)。
2.根据权利要求1所述的压电晶体复合材料,其与如下进一步组合:
添加剂,所述添加剂选自由如下构成的组:高达总分批重量的5%(wt%)的锰(Mn)以及高达总分批重量的10%(wt%)的铈(Ce)。
3.根据权利要求1所述的压电晶体复合材料,其中:
所述晶体复合材料具有大约0.65至0.90的厚度机电耦合因数k1。
4.根据权利要求1所述的压电晶体复合材料,其中:
所述晶体复合材料可工作于至少20MHz的频率。
5.根据权利要求1所述的压电晶体复合材料,其中:
所述晶体复合材料工作于至少80MHz的频率。
6.根据权利要求1所述的压电晶体复合材料,其与如下进一步组合:
被配置为用于可操作超声成像的医学成像装置。
7.根据权利要求1所述的压电晶体复合材料,其中:
所述晶体复合材料被(011)切割和<011>定极并且根据如下坐标旋转d31公式在远离<011>方向的+/-32.5°(+/-2.5°)的方向上提供零应变:
d’31=d31*Cos(θ)*Cos(θ)+d32*Sin(θ)*Sin(θ)。
8.基于压电PMN-PT的晶体复合材料,所述压电晶体复合材料具有含一无铅成分的晶体组成,并且由如下公式表示:
x*ABO3-y*PbTiO3-(1-x-y)*Pb(Mg1/3Nb2/3)O3;
其中,
x被限定为0.00至0.50的摩尔百分比;
y被限定为0.00至0.50的摩尔百分比;
A表示铋(Bi)或钡(Ba);
B表示选自由如下构成的组的一个:铟(In)、镱(Yb)、铁(Fe)、锆(Zr)、钪(Sc)、铌(Nb)、钽(Ta)以及这些元素的组合。
9.根据权利要求8所述的压电晶体复合材料,其与如下进一步组合:
添加剂,所述添加剂选自由如下构成的组:高达总分批重量的5%(wt%)的锰(Mn)以及高达总分批重量的10%(wt%)的铈(Ce)。
10.根据权利要求9所述的压电晶体复合材料,其中:
所述晶体复合材料具有大约0.65至0.90的厚度机电耦合因数k1。
11.根据权利要求8所述的压电晶体复合材料,其中:
所述晶体复合材料工作于至少20MHz的频率。
12.根据权利要求8所述的压电晶体复合材料,其中:
所述晶体复合材料工作于至少80MHz的频率。
13.根据权利要求8所述的压电晶体复合材料,其与如下进一步组合:
被配置为用于可操作超声成像的医学成像装置。
14.如权利要求8所述的压电晶体复合材料,其中:
所述晶体复合材料被(011)切割和<011>定极并且根据如下坐标旋转d31公式在远离<011>方向的+/-32.5°(+/-2.5°)的方向上提供零应变:
d’31=d31*Cos(θ)*Cos(θ)+d32*Sin(θ)*Sin(θ)。
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