CN103208490A - Semiconductor device with conductor and production method thereof - Google Patents
Semiconductor device with conductor and production method thereof Download PDFInfo
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- CN103208490A CN103208490A CN2012100078026A CN201210007802A CN103208490A CN 103208490 A CN103208490 A CN 103208490A CN 2012100078026 A CN2012100078026 A CN 2012100078026A CN 201210007802 A CN201210007802 A CN 201210007802A CN 103208490 A CN103208490 A CN 103208490A
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Abstract
The invention provides a semiconductor device with a conductor and a production method thereof. Conductor materials are adopted to serve as basic units of the semiconductor device. A Schottky barrier junction and ohmic contact which are formed by the conductor materials and semiconductor materials are arranged in the device structure to form the novel semiconductor device. The semiconductor device with the conductor is the basic structure for manufacturing of power devices and integrated circuits.
Description
Technical field
The present invention relates to a kind of semiconductor device with conductor, the invention still further relates to the preparation method of the semiconductor device with conductor.Semiconductor device of the present invention is the basic structure of making power device and integrated circuit.
Background technology
Semiconductor device is being played the part of more and more important role in human society, be widely used in fields such as illumination, communication, computer, automobile, industrial electrical equipment, is the basic product of human society.
Conventional semiconductor devices uses semi-conducting material, insulating material, PN junction, schottky junction and MOS structure as the elementary cell of device in a large number, and metal also is widely used as interconnection line or contact conductor at semiconductor device.
Summary of the invention
The present invention proposes a kind of semiconductor device with conductor and preparation method thereof with conductor material as the semiconductor device elementary cell.
A kind of semiconductor device with conductor is characterized in that: comprising: one deck conductor material; Both sides at conductor material layer have semi-conducting material.Described conductor material can be metal material.The semi-conducting material of described conductor material layer both sides can be the first conductive semiconductor material.The semi-conducting material of described conductor material layer both sides can be the second conductive semiconductor material.The semi-conducting material of described conductor material layer both sides can be mutually the semi-conducting material of different types each other.Described conductor material and semi-conducting material can form ohmic contact.Can form schottky barrier junction between described conductor material and the semi-conducting material.Also can form conductor and semi-conducting material composite material between described conductor material and the semi-conducting material, form schottky barrier junction.Described a kind of preparation method with semiconductor device of conductor is characterized in that: comprise the steps: to form conductor material at semiconductor material surface; Form the semispecies conductor material on the conductor material surface.
A kind of semiconductor device with conductor is characterized in that: comprising: the layer of semiconductor material;
Has conductor material in the semiconductor material layer both sides; It is schottky barrier junction between conductor material and the semi-conducting material.Described conductor material can be metal material.Described semi-conducting material can be the first conductive semiconductor material.Described semi-conducting material can be the second conductive semiconductor material.Described semi-conducting material can be the semiconductor layer of one or more first conductive semiconductor material layers and the formation of one or more second conductive semiconductor material mutual superposition.Also can form conductor and semi-conducting material composite material between described conductor material and the semi-conducting material, form schottky barrier junction.Described a kind of preparation method with semiconductor device of conductor is characterized in that: comprise the steps: to form semi-conducting material on the conductor material surface; Form conductor material at semiconductor material surface.
A kind of semiconductor device with conductor is characterized in that: comprising: one deck conductor material; The semiconductor layer of having one or more first conductive semiconductor material layers and the formation of one or more second conductive semiconductor material mutual superposition in a side of conductor material; It is schottky barrier junction between conductor material and the semi-conducting material.Described conductor material can be metal material.Described conductor material one side semiconductor layer can be the semiconductor layer of one deck first conductive semiconductor material and one deck second conductive semiconductor material mutual superposition.Described conductor material one side semiconductor layer can be the semiconductor layer of one deck first conductive semiconductor material and the two-layer second conductive semiconductor material mutual superposition.Also can form conductor and semi-conducting material composite material between described conductor and the semi-conducting material, form schottky barrier junction.Described a kind of preparation method with semiconductor device of conductor is characterized in that: comprise the steps: to form one or more layers semi-conducting material at semiconductor material surface; Form conductor material at semiconductor material surface.
Has the semi-conducting material semiconductor device for the both sides at conductor material layer, when conductor forms Schottky base barrier junction with N type semiconductor material and P type semiconductor material respectively, this semiconductor device is equivalent to two schottky junction series connection, form the semiconductor device that forward conduction oppositely ends, and be single charge carrier device, charge carrier is electronics in the N type semiconductor material, and charge carrier is the hole in the P type semiconductor material.Has the semi-conducting material semiconductor device for the both sides at conductor material layer, conductor and semi-conducting material form ohmic contact, conductor forms unified drift region with a plurality of semiconductor regions, because be ohmic contact, has thin high concentration impurities doped region at the semi-conducting material near conductor.This semiconductor device can link to each other with semiconductor device such as PN junction, forms the semiconductor device of the drift region with a plurality of separation.
For the semiconductor device of having conductor material in the both sides of semiconductor material layer, two conductors form Schottky base barrier junction with semi-conducting material respectively, this semiconductor device is equivalent to two schottky junctions and connects back-to-back, form forward and reverse semiconductor device that ends, and be single charge carrier device, charge carrier is electronics in the N type semiconductor material, and charge carrier is the hole in the P type semiconductor material.This semiconductor device can be introduced the gate electrode of the 3rd electrode or MOS at semi-conducting material, forms three terminal device.
For the semiconductor device of having the semiconductor layer of one or more first conductive semiconductor material layers and the formation of one or more second conductive semiconductor material mutual superposition in a side of conductor material, conductor and semi-conducting material form Schottky base barrier junction, this semiconductor device is equivalent to a schottky junction connects with a plurality of PN junctions, forms the semiconductor device that has by function.This semiconductor device can be introduced the gate electrode of the 3rd electrode or MOS at semi-conducting material, forms three terminal device.
Above-mentioned semiconductor device can the applied power device, also can be applicable to integrated circuit.
The present invention includes the preparation method of the semiconductor device with conductor, can realize the manufacturing of above-mentioned semiconductor device.
Description of drawings
Fig. 1 is a kind of generalized section with semiconductor device of conductor of the present invention;
Fig. 2 is a kind of generalized section with semiconductor device of conductor of the present invention;
Fig. 3 is a kind of generalized section with semiconductor device of conductor of the present invention.
Wherein,
1, substrate layer;
2, light dope N type semiconductor silicon materials;
4, doped with P type semiconductor silicon material;
5, heavy doping P type semiconductor silicon materials;
6, schottky barrier junction;
8, thermal oxidation oxide layer;
9, barrier metal;
10, surface metal-layer.
Embodiment
Fig. 1 is a kind of semiconductor device with conductor of the present invention, describes semiconductor device of the present invention in detail below in conjunction with Fig. 1.
A kind of semiconductor device with conductor comprises: substrate layer 1, be N conductive type semiconductor silicon materials, and the doping content of phosphorus atoms is 1E19/CM
3, on substrate layer 1 surface, by surface metal-layer 10 extraction electrodes; Light dope N type semiconductor silicon materials 2 are positioned on the substrate layer 1, are the semiconductor silicon material of N conduction type, and the doping content of phosphorus atoms is 1E15/CM
3Barrier metal 9 is Schottky barrier metal, between light dope N type semiconductor silicon materials 2; Schottky barrier junction 6 is positioned at light dope N type semiconductor silicon materials 2 surfaces, is the silicide of semiconductor silicon material and barrier metal formation.
Its manufacture craft comprises the steps:
The first step, on the surface of the light dope N type semiconductor silicon materials 2 with N-type substrate layer 1, deposit barrier metal 9, barrier metal are nickel;
Second step, carry out deposit light dope N type semiconductor silicon materials 2, carry out deposit N-type substrate layer 1;
The 3rd step, at surface deposition surface metal-layer 10, carry out lithography corrosion process, remove the surface portion metal, as shown in Figure 1.
Fig. 2 is a kind of semiconductor device with conductor of the present invention, describes semiconductor device of the present invention in detail below in conjunction with Fig. 2.
A kind of semiconductor device with conductor comprises: light dope N type semiconductor silicon materials 2, be the semiconductor silicon material of N conduction type, and the doping content of phosphorus atoms is 1E15/CM
3Surface metal-layer 10 is positioned at device surface, extraction electrode; Schottky barrier junction 6 is positioned at light dope N type semiconductor silicon materials 2 surfaces, is the silicide of semiconductor silicon material and barrier metal formation.
Its manufacture craft comprises the steps:
The first step, on the surface of light dope N type semiconductor silicon materials 2, deposit barrier metal 9, barrier metal are nickel, form schottky barrier junction, remove metallic nickel;
Second step, at surface deposition surface metal-layer 10, carry out lithography corrosion process, remove the surface portion metal, as shown in Figure 2.
Embodiment 3
Fig. 3 is a kind of semiconductor device with conductor of the present invention, describes semiconductor device of the present invention in detail below in conjunction with Fig. 3.
A kind of semiconductor device with conductor comprises: substrate layer 1, be N conductive type semiconductor silicon materials, and the doping content of phosphorus atoms is 1E19/CM
3, on substrate layer 1 surface, by surface metal-layer 10 extraction electrodes; Light dope N type semiconductor silicon materials 2 are positioned on the substrate layer 1, are the semiconductor silicon material of N conduction type, and the doping content of phosphorus atoms is 1E15/CM
3Doped with P type semiconductor silicon material 4 is positioned on the doped with P type semiconductor silicon material 2, is the semiconductor silicon material of N conduction type, and the doping content of boron atom is 1E16/CM
3Heavy doping P type semiconductor silicon materials 5 are positioned on the doped with P type semiconductor silicon material 4, are the semiconductor silicon material of P conduction type, and the doping content of boron atom is 1E18/CM
3 Schottky barrier junction 6 is positioned at doped with P type semiconductor silicon material 4 surfaces, is the silicide of semiconductor silicon material and barrier metal formation; The device upper surface is coated with surface metal-layer 10, is respectively schottky barrier junction 6 and heavy doping P type semiconductor silicon materials 5 extraction electrodes.
Its manufacture craft comprises the steps:
The first step, on the surface of the light dope N type semiconductor silicon materials 2 with N-type substrate layer 1, deposit doped with P type semiconductor silicon material 4 forms thermal oxidation oxide layer 8 at material surface.
Second step, photoetching corrosion, etching characteristic zone thermal oxidation oxide layer 8 is injected boron impurity annealing and is formed heavy doping P type semiconductor silicon materials 5;
The 3rd step, photoetching corrosion, etching characteristic zone thermal oxidation oxide layer 8 is carried out deposit barrier metal 9, and barrier metal is nickel, forms schottky barrier junction, removes metallic nickel;
The 4th step, at surface deposition surface metal-layer 10, carry out lithography corrosion process, remove the surface portion metal, be respectively schottky barrier junction 6 and heavy doping P type semiconductor silicon materials 5 extraction electrodes, as shown in Figure 3.
Set forth the present invention by above-mentioned example, also can adopt other example to realize the present invention simultaneously, the present invention is not limited to above-mentioned instantiation, so the present invention is limited by the claims scope.
Claims (22)
1. semiconductor device with conductor is characterized in that: comprising:
One deck conductor material;
Both sides at conductor material layer have semi-conducting material.
2. semiconductor device as claimed in claim 1, it is characterized in that: described conductor material can be metal material.
3. semiconductor device as claimed in claim 1, it is characterized in that: the semi-conducting material of described conductor material both sides can be the first conductive semiconductor material.
4. semiconductor device as claimed in claim 1, it is characterized in that: the semi-conducting material of described conductor material both sides can be the second conductive semiconductor material.
5. semiconductor device as claimed in claim 1 is characterized in that: the semi-conducting material of described conductor material both sides can be mutually the semi-conducting material of different types each other.
6. semiconductor device as claimed in claim 1, it is characterized in that: described conductor material and semi-conducting material can form ohmic contact.
7. semiconductor device as claimed in claim 1 is characterized in that: can form schottky barrier junction between described conductor material and the semi-conducting material.
8. semiconductor device as claimed in claim 1 is characterized in that: also can form conductor and semi-conducting material composite material between described conductor material and the semi-conducting material, form schottky barrier junction.
9. semiconductor device with conductor is characterized in that: comprising:
The layer of semiconductor material;
Has conductor material in the semiconductor material layer both sides;
It is schottky barrier junction between conductor material and the semi-conducting material.
10. semiconductor device as claimed in claim 9, it is characterized in that: described conductor material can be metal material.
11. semiconductor device as claimed in claim 9 is characterized in that: described semi-conducting material can be the first conductive semiconductor material.
12. semiconductor device as claimed in claim 9 is characterized in that: described semi-conducting material can be the second conductive semiconductor material.
13. semiconductor device as claimed in claim 9 is characterized in that: described semi-conducting material can be the semiconductor layer of one or more first conductive semiconductor material layers and the formation of one or more second conductive semiconductor material mutual superposition.
14. semiconductor device as claimed in claim 9 is characterized in that: also can form conductor and semi-conducting material composite material between described conductor material and the semi-conducting material, form schottky barrier junction.
15. the semiconductor device with conductor is characterized in that: comprising:
One deck conductor material;
The semiconductor layer of having one or more first conductive semiconductor material layers and the formation of one or more second conductive semiconductor material mutual superposition in a side of conductor material;
It is schottky barrier junction between conductor material and the semi-conducting material.
16. semiconductor device as claimed in claim 15 is characterized in that: described conductor material can be metal material.
17. semiconductor device as claimed in claim 15 is characterized in that: described conductor material one side semiconductor layer can be the semiconductor layer of one deck first conductive semiconductor material and one deck second conductive semiconductor material mutual superposition.
18. semiconductor device as claimed in claim 15 is characterized in that: described conductor material one side semiconductor layer can be the semiconductor layer of one deck first conductive semiconductor material and the two-layer second conductive semiconductor material mutual superposition.
19. semiconductor device as claimed in claim 15 is characterized in that: also can form conductor material and semi-conducting material composite material between described conductor and the semi-conducting material, form schottky barrier junction.
20. a kind of preparation method with semiconductor device of conductor as claimed in claim 1 is characterized in that: comprise the steps:
1) forms conductor material at semiconductor material surface;
2) form the semispecies conductor material on the conductor material surface.
21. a kind of preparation method with semiconductor device of conductor as claimed in claim 9 is characterized in that: comprise the steps:
1) forms semi-conducting material on the conductor material surface;
2) form conductor material at semiconductor material surface.
22. a kind of preparation method with semiconductor device of conductor as claimed in claim 15 is characterized in that: comprise the steps:
1) forms one or more layers semi-conducting material at semiconductor material surface;
2) form conductor material at semiconductor material surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100078026A CN103208490A (en) | 2012-01-11 | 2012-01-11 | Semiconductor device with conductor and production method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012100078026A CN103208490A (en) | 2012-01-11 | 2012-01-11 | Semiconductor device with conductor and production method thereof |
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| CN103208490A true CN103208490A (en) | 2013-07-17 |
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| CN2012100078026A Pending CN103208490A (en) | 2012-01-11 | 2012-01-11 | Semiconductor device with conductor and production method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1216635A (en) * | 1996-03-07 | 1999-05-12 | 3C半导体公司 | Os rectifying schottky and ohmic junction and W/WC/TiC ohmic contacts on sic |
| CN101019236A (en) * | 2004-07-15 | 2007-08-15 | 斯平内克半导体股份有限公司 | Metal source power transistor and method of manufacture |
| US20090032817A1 (en) * | 2005-07-18 | 2009-02-05 | Tingkai Li | Back-To-Back Metal/Semiconductor/Metal (MSM) Schottky Diode |
| CN101894771A (en) * | 2010-06-22 | 2010-11-24 | 中国科学院上海微***与信息技术研究所 | Manufacturing method of multilayer stacked resistance transit storage |
| CN102113122A (en) * | 2008-08-06 | 2011-06-29 | 佳能株式会社 | Rectifier |
-
2012
- 2012-01-11 CN CN2012100078026A patent/CN103208490A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1216635A (en) * | 1996-03-07 | 1999-05-12 | 3C半导体公司 | Os rectifying schottky and ohmic junction and W/WC/TiC ohmic contacts on sic |
| CN101019236A (en) * | 2004-07-15 | 2007-08-15 | 斯平内克半导体股份有限公司 | Metal source power transistor and method of manufacture |
| US20090032817A1 (en) * | 2005-07-18 | 2009-02-05 | Tingkai Li | Back-To-Back Metal/Semiconductor/Metal (MSM) Schottky Diode |
| CN102113122A (en) * | 2008-08-06 | 2011-06-29 | 佳能株式会社 | Rectifier |
| CN101894771A (en) * | 2010-06-22 | 2010-11-24 | 中国科学院上海微***与信息技术研究所 | Manufacturing method of multilayer stacked resistance transit storage |
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Application publication date: 20130717 |