CN103207636A - Circuit for providing low-noise band-gap reference voltage source - Google Patents
Circuit for providing low-noise band-gap reference voltage source Download PDFInfo
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Abstract
The invention provides a circuit for providing a low-noise band-gap reference voltage source. The band-gap reference voltage source provides multiple circuits of current with temperature coefficients, and the temperature coefficient of the current can just counteract the temperature coefficient of a resistance adopted in the reference voltage source. The band-gap reference voltage source with zero temperature is generated when the current flows by the resistance, and a low-pass filter with low cut-off frequency is connected behind the band-gap reference voltage source to filter the noise of the band-gap reference voltage source, so that different current can be supplied to different modules in a radio frequency (RF) chip on a subscriber identity module (SIM) card of a mobile phone.
Description
Technical field
The present invention relates to the bandgap voltage reference field, particularly a kind of low-noise gap reference voltage source.
Background technology
Needing in the radio frequency chip provides a low-noise gap reference voltage source to the radio frequency module, and disturbs the low-noise gap reference voltage source when not allowing the work of each module, and traditional way is at the plug-in big electric capacity of the output of bandgap voltage reference.By big electric capacity bandgap voltage reference is carried out filtering.
Yet, adopt general plug-in big electric capacity that bandgap voltage reference is carried out filtering and have following problem:
(1) need outside chip, increase a big electric capacity, increase the cost of an electric capacity expense to whole proposal, need increase the area of an electric capacity at printing board PCB (Printed circuit board) plate.External capacitor needs the many chip pins of chip simultaneously, has increased a binding line cost to chip like this.
(2) because to need to use the RF module of low-noise gap reference voltage source in the RF chip a lot, but can only a plug-in sheet outer electric capacity of bandgap voltage reference is so all the RF modules that need use the low-noise gap reference voltage source must share a low-noise gap reference voltage source.
(3) the bandgap voltage reference plug-in capacitor can bring bandgap voltage reference long problem start-up time, and this can bring the total system expense of start-up time.
Summary of the invention
The embodiment of the invention provides a kind of low-noise gap reference voltage source.
It is a kind of be used to the circuit that bandgap voltage reference is provided that the embodiment of the invention provides, and comprises current-type band gap reference voltage source, first resistance, low-pass filter;
Described current-type band gap reference voltage source is used for the electric current of output band temperature coefficient;
Described first resistance, one end connects the output terminal of described current-type band gap reference voltage source, other end ground connection, and described first resistance is used for the electric current of described band temperature coefficient is converted into the bandgap voltage reference of zero-temperature coefficient;
Described low-pass filter is used for the bandgap voltage reference of described zero-temperature coefficient is converted into the output of low-noise gap reference voltage.
Above-mentioned circuit comprises that also described low-pass filter comprises PMOS pipe, the 2nd PMOS pipe, first electric capacity;
Described PMOS pipe source electrode is connected with the non-earth terminal of described first resistance, and drain electrode is connected substrate ground connection with described low-pass filter output terminal;
Described the 2nd PMOS pipe source electrode is connected with the non-earth terminal of described first resistance, drain electrode is connected with described low-pass filter output terminal, described the 2nd PMOS pipe is opened when described current-type band gap reference voltage source starts, and closes after described current-type band gap reference voltage source startup finishes;
Described first electric capacity, one end is connected other end ground connection with described low-pass filter output terminal.
Above-mentioned circuit also comprises, fast start circuit, described fast start circuit are used for the outside enable signal of described current-type band gap reference voltage source is converted into the substrate that quick enabling signal exports described the 2nd PMOS pipe to.
Above-mentioned circuit comprises that also described fast start circuit comprises first not gate, second not gate, the 3rd not gate, the 4th not gate, second resistance, second electric capacity, rejection gate;
Described first not gate, second not gate connect successively;
Described second resistance, one end connects the described second non-gate output terminal, and an end connects described the 3rd not gate input end;
Described second electric capacity, one end connects described the 3rd not gate input end, an end ground connection;
Described the 3rd not gate, the 4th not gate connect successively;
The input end of described rejection gate connects the output terminal of described first not gate, the output terminal of described the 4th not gate respectively, and described rejection gate is exported described quick enabling signal.
Above-mentioned circuit comprises that also described current-type band gap reference voltage source comprises first triode (214), second triode (215), the 3rd resistance (201), the 4th resistance (205), the 5th resistance (206), operational amplifier (207), the 3rd PMOS manages (208), and the 4th PMOS manages (209), the 5th PMOS manages (210), and the 6th PMOS manages (211), and the 7th PMOS manages (214), the 8th PMOS manages (215), the one NMOS pipe, the 2nd NMOS pipe, at least one exports branch road;
Described the 3rd PMOS pipe, the 5th gate pmos extremely all link to each other the equal input service voltage of source electrode with described operational amplifier output terminal;
Described the 4th PMOS pipe source electrode links to each other with the drain electrode of described the 3rd PMOS pipe, and grid extremely links to each other with described the 6th gate pmos, and drain electrode links to each other with described operational amplifier negative input;
Described the 6th PMOS pipe source electrode links to each other with the drain electrode of described the 5th PMOS pipe, and drain electrode links to each other with described operational amplifier positive input;
Described first transistor emitter links to each other base stage, grounded collector with described operational amplifier negative input;
Described second transistor emitter links to each other base stage, grounded collector by described the 3rd resistance with described operational amplifier positive input;
The area ratio of the area of described first triode and described second triode is 1:n, and n is positive integer;
Described the 4th resistance one end connects described operational amplifier negative input, other end ground connection;
Described the 5th resistance one end connects described operational amplifier positive input, other end ground connection;
Described the 7th gate pmos utmost point connects described the 5th gate pmos utmost point, described output branch road input end, source electrode input service voltage, and drain electrode connects the drain electrode of described NMOS pipe;
Described the 8th gate pmos utmost point connects described the 6th gate pmos utmost point, described output branch road input end, source electrode input service voltage, and drain electrode connects the drain electrode of described the 2nd NMOS pipe;
A described NMOS tube grid links to each other source ground with drain electrode;
Described the 2nd NMOS tube grid links to each other source ground with a described NMOS tube grid;
Described output branch road is exported the electric current of described band temperature coefficient.
Above-mentioned circuit comprises that also described output branch road comprises that first branch road PMOS pipe (212), the second branch road PMOS manage (213);
Described first branch road PMOS pipe source electrode input service voltage, grid extremely links to each other with described the 7th gate pmos, and drain electrode connects the source electrode of the described second branch road PMOS pipe;
The grid of the described second branch road PMOS pipe connects described the 8th gate pmos utmost point, the electric current of the described band temperature coefficient of drain electrode output.
Above-mentioned circuit also comprises, described current-type band gap reference voltage source comprises two or more output branch roads, the electric current of the band temperature coefficient of described output branch road output is isolated mutually, all is converted into the output of low-noise gap reference voltage through described first resistance, described low-pass filter.
Above-mentioned circuit comprises that also described first resistance is adjustable, and described circuit is exported the low-noise gap reference voltage source of different magnitudes of voltage.
Above-mentioned circuit comprises that also described circuit is used to the voltage controlled oscillator in the radio frequency chip, and the one or more modules in digital compensation crystal oscillator or the phaselocked loop provide the low-noise gap reference voltage source.
The embodiment of the invention provides is used for providing the circuit beneficial effect of bandgap voltage reference to be: need not increase a big electric capacity chip outside, the saving cost; Multichannel low-noise gap reference voltage source is provided, and makes the entire circuit toggle speed fast by increasing fast start circuit.
Description of drawings
A kind of low-noise gap reference voltage source theory diagram that Fig. 1 provides for the embodiment of the invention;
The theory diagram of current-type band gap reference voltage source Bandgap in the accompanying drawing 1 that Fig. 2 provides for the embodiment of the invention;
Another theory diagram of current-type band gap reference voltage source Bandgap in the accompanying drawing 1 that Fig. 3 provides for the embodiment of the invention;
A kind of fast startup logic that Fig. 4 provides for the embodiment of the invention;
A kind of fast startup logic input and output waveform that Fig. 5 provides for the embodiment of the invention.
Embodiment
For making goal of the invention, technical scheme and beneficial effect clearer, below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated.
RF chip low-noise gap reference voltage source solution is as follows on the SIM card chip provided by the invention:
(1) current-type band gap reference voltage source of design, bandgap voltage reference provides the slightly electric current of temperature coefficient of multichannel, and the temperature coefficient of electric current is offset the temperature coefficient of the resistance that adopts in the reference voltage source just.Produce the bandgap voltage reference of zero-temperature coefficient by current flowing resistance.
(2) the bandgap voltage reference back connects a low-pass filter that cutoff frequency is very low, and the noise filtering of bandgap voltage reference is fallen.
(3) to fast start circuit of bandgap voltage reference design, allow bandgap voltage reference set up fast.
(4) on the SIM cards of mobile phones in the RF chip different modules different electric currents are provided, obtain the low-noise gap reference voltage source through identical filtering method.
(5) by regulating the bandgap voltage reference that resistance obtains different magnitudes of voltage.
With specific embodiment a kind of low-noise gap reference voltage source provided by the invention is described in detail below.
Fig. 1 is low-noise gap reference voltage source theory diagram.
Bandgap (104) is the current-type band gap reference voltage source, and Bandgap is output as the slightly electric current of temperature coefficient, and the temperature coefficient of electric current is offset the temperature coefficient of the resistance R 3 (103) that adopts in the reference voltage source just.Produce the bandgap voltage reference of zero-temperature coefficient by current flowing resistance R3 (103).MP1 (101) is PMOS pipe (positive MOS), conduction impedance is about 10M Ω, PMOS pipe MP2 (105) is switching tube, resistance R 3 (103) one end ground connection, the other end links to each other with the output (104) of current-type band gap reference voltage source Bandgap and the end of PMOS pipe MP1 (101), when Bandgap (104) starts, PMOS pipe MP2 (105) opens, electric current is charged to the magnitude of voltage of reference voltage Vref for capacitor C 1 (102) by MP2 (105), after startup finishes, MP2 (105) closes, Vref voltage is by giving C11 (102) charging by PMOS pipe MP1 (101) with the RC low-pass filter network that capacitor C 1 (102) combines, suppose Rdson (MP1)=10Mohm (ohm), C1=20pF (method), the cutoff frequency of RC low-pass filter network is w=1/ (2 π RC)=800Hz, so the filter network of Zu Chenging can reduce the noise greater than the 800Hz frequency thus, if desired more low-frequency noise is reduced, need design the lower filter network of cutoff frequency, those skilled in the art can be by adjusting related resistors R, and the value of capacitor C realizes.The noise that Vref produces filters out by the RC low-pass filter network, obtains the low-noise gap reference voltage source.
Be used for providing the circuit of bandgap voltage reference, it comprises current-type band gap reference voltage source, first resistance, low-pass filter; The current-type band gap reference voltage source is used for the electric current of output band temperature coefficient; First resistance, one end connects the output terminal of current-type band gap reference voltage source, other end ground connection, and first resistance is used for being converted into the bandgap voltage reference of zero-temperature coefficient with the electric current of temperature coefficient;
Low-pass filter is used for the bandgap voltage reference of zero-temperature coefficient is converted into the output of low-noise gap reference voltage.Low-pass filter comprises PMOS pipe, the 2nd PMOS pipe, first electric capacity; The one PMOS pipe source electrode is connected with the non-earth terminal of first resistance, and drain electrode is connected substrate ground connection with the low-pass filter output terminal; The 2nd PMOS pipe source electrode is connected with the non-earth terminal of first resistance, and drain electrode is connected with the low-pass filter output terminal, and the 2nd PMOS pipe is opened when the current-type band gap reference voltage source starts, and closes after the startup of current-type band gap reference voltage source finishes; First electric capacity, one end is connected other end ground connection with the low-pass filter output terminal.
This circuit also comprises fast start circuit, and fast start circuit is used for the outside enable signal of current-type band gap reference voltage source is converted into the substrate that quick enabling signal exports the 2nd PMOS pipe to.
Fig. 2 is the theory diagram of current-type band gap reference voltage source Bandgap in the accompanying drawing 1.The input voltage of voltage source is VDD (203), and earth terminal is GND (204).The area ratio of the area of triode Q1 (214) and triode Q2 (215) is 1:n, and n is positive integer, and in bandgap voltage reference, n generally gets 8 or 24.This node of Vx is by operational amplifier OP (207), PMOS manages PM2 (208), PMOS pipe PM3 (209) forms a regenerative feedback loop, Vy is by OP (207), PMOS manages PM1 (210), and PMOS pipe PM4 (211) forms a feedback loop, and the degeneration factor of feedback loop is greater than the feedback factor of regenerative feedback loop, make the feedback of whole band gap reference voltage source circuit show negative feedback, make Vx equate with the Vy clamper by negative feedback.The voltage position Vbe that Vx is ordered, the voltage at R1 two ends is Δ Vbe, flow through that PM1 (210) equates with the electric current of PM2 (208) and be I, because R2 (205)=R3 (206), so obtain electric current I=Δ Vbe/R1+Vbe/R2, Δ Vbe/R1 is the electric current of positive temperature coefficient (PTC), Vbe/R2 is the electric current of negative temperature coefficient, regulate the resistance value of resistance R 1 (201) and resistance R 2 (205), can obtain the slightly IB_VREF of temperature coefficient (202) electric current, as IB1_VREF(202), IB2_VREF, IB3_VREF, IB4_VREF.As shown in Figure 1, the IB_VREF current flowing resistance R3 (206) of temperature coefficient slightly, produce the Vref of zero-temperature coefficient, Vref=(Δ Vbe/R1+Vbe/R2) * R3, the value of R3 can arrange the Vref voltage that obtains wanting arbitrarily, is operated in the saturation region as long as guarantee the PMOS pipe of current mirror.The low noise reference voltage source that multichannel is different if desired, can go out the plurality of voltages source by the mode mirror image of current mirror, produce the slightly band-gap reference electric current of temperature coefficient of multichannel, can accomplish between electric current and the electric current to isolate well, reduce the phase mutual interference between the reference voltage source, produced non-interfering low noise reference voltage source by mirror image circuit again.
The current-type band gap reference voltage source comprises first triode (214), second triode (215), the 3rd resistance (201), the 4th resistance (205), the 5th resistance (206), operational amplifier (207), the 3rd PMOS manages (208), and the 4th PMOS manages (209), and the 5th PMOS manages (210), the 6th PMOS manages (211), the 7th PMOS manages (214), and the 8th PMOS manages (215), NMOS pipe, the 2nd NMOS pipe, at least one exports branch road; The 3rd PMOS pipe, the 5th gate pmos extremely all link to each other the equal input service voltage of source electrode with described operational amplifier output terminal; The 4th PMOS pipe source electrode links to each other with the drain electrode of the 3rd PMOS pipe, and grid extremely links to each other with the 6th gate pmos, and drain electrode links to each other with the operational amplifier negative input; The 6th PMOS pipe source electrode links to each other with the drain electrode of the 5th PMOS pipe, and drain electrode links to each other with the operational amplifier positive input; First transistor emitter links to each other with the operational amplifier negative input, base stage, grounded collector; Second transistor emitter links to each other base stage, grounded collector by the 3rd resistance with the operational amplifier positive input; The area ratio of the area of first triode and second triode is 1:n, and n is positive integer; The 4th resistance one end concatenation operation amplifier negative input, other end ground connection; The 5th resistance one end concatenation operation amplifier positive input, other end ground connection; The 7th gate pmos utmost point connects the 5th gate pmos utmost point, output branch road input end, source electrode input service voltage, and drain electrode connects the drain electrode of NMOS pipe; The 8th gate pmos utmost point connects the 6th gate pmos utmost point, output branch road input end, source electrode input service voltage, and drain electrode connects the drain electrode of the 2nd NMOS pipe; The one NMOS tube grid links to each other source ground with drain electrode; The 2nd NMOS tube grid links to each other source ground with a NMOS tube grid; The electric current of output branch road output band temperature coefficient.
The output branch road comprises that first branch road PMOS pipe (212), the second branch road PMOS manage (213); First branch road PMOS pipe source electrode input service voltage, grid extremely links to each other with the 7th gate pmos, and drain electrode connects the source electrode of the second branch road PMOS pipe; The grid of the second branch road PMOS pipe connects the 8th gate pmos utmost point, the electric current of drain electrode output band temperature coefficient.
The current-type band gap reference voltage source comprises two or more output branch roads, and the electric current of the band temperature coefficient of output branch road output is isolated mutually, all is converted into the output of low-noise gap reference voltage through described first resistance, low-pass filter.First resistance is adjustable, and circuit is exported the low-noise gap reference voltage source of different magnitudes of voltage.Circuit is used to the voltage controlled oscillator in the radio frequency chip, and the one or more modules in digital compensation crystal oscillator or the phaselocked loop provide the low-noise gap reference voltage source.
The low noise reference voltage source theory diagram of single channel as shown in Figure 3, the input voltage of voltage source is VDD (303), earth terminal is that (304, resistance R 1 function is identical with its function in accompanying drawing 2, repeats no more, and the output reference power supply is IB_VREF (302) for GND.
Fig. 4 is fast startup logic.
BG_EN is the enable signal of low-noise gap reference voltage source, when BG_EN when low, the low-noise gap reference voltage source circuit is closed, as BG_EN when being high, the low-noise gap reference voltage source is opened.The low-noise gap reference voltage source is that BG_EN is by the low process that uprises by being closed to unlatching.As BG_EN during by low uprising, BG_EN is through resistance R 1, and the time-delay of the about 54us of delay unit that capacitor C 1 is combined into can be by adjusting resistance R 1, thereby the value of capacitor C 1 obtains different time-delays, carries out phase with the reverse signal of BG_EN again and maybe must arrive the Fast_Setup signal.Fast_Setup is a narrow pulse signal, and when BG_EN kept a constant voltage, Fast_Setup position high level was closed the PMOSMP2 pipe among Fig. 1.As BG_EN during by low uprising, Fast_Setup produces a low voltage pulse that is about 4us, and of short duration unlatching PMOS manages MP2 4us and closes after the time.
Fast start circuit is used for the outside enable signal of described current-type band gap reference voltage source is converted into the substrate that quick enabling signal exports described the 2nd PMOS pipe to.
Fast start circuit comprises first not gate, second not gate, the 3rd not gate, the 4th not gate, second resistance, second electric capacity, rejection gate; First not gate, second not gate connect successively; Second resistance, one end connects the second non-gate output terminal, and an end connects the 3rd not gate input end; Second electric capacity, one end connects the 3rd not gate input end, an end ground connection; The 3rd not gate, the 4th not gate connect successively; The input end of rejection gate connects the output terminal of first not gate, the output terminal of the 4th not gate respectively, and rejection gate is exported quick enabling signal.
Fig. 5 is fast startup logic input and output waveforms, for further the present invention will be described.
When BG_EN keeps low the time for a long time, Fast_Setup is high level, and when BG_EN keeps high the time for a long time, Fast_Setup is high level also, has only as BG_EN during by low uprising, and Fast_Setup just can produce the pulse of an about 4us.
In RF IC, noise objective to reference voltage source requires very high, require the reference voltage source isolation also very high simultaneously, the present invention is applicable to the voltage controlled oscillator VCO among the RF IC, numeral compensation crystal oscillator DCXO, phase-locked loop pll modules such as (Phase Locked Loop) provides the low noise reference voltage source.
In sum, the embodiment of the invention provides a kind of low-noise gap reference voltage source circuit implementation structure; A kind of circuit implementation structure of current-type band gap reference voltage source; A kind of implementation structure of fast startup logic and control mode; A kind of isolation method of multichannel reference voltage;
More than a kind of low-noise gap reference voltage source that the embodiment of the invention is provided be described in detail, used specific case herein principle of the present invention and embodiment are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that all can change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (9)
1. a circuit that is used for providing bandgap voltage reference is characterized in that: comprise current-type band gap reference voltage source, first resistance, low-pass filter;
Described current-type band gap reference voltage source is used for the electric current of output band temperature coefficient;
Described first resistance, one end connects the output terminal of described current-type band gap reference voltage source, other end ground connection, and described first resistance is used for the electric current of described band temperature coefficient is converted into the bandgap voltage reference of zero-temperature coefficient;
Described low-pass filter is used for the bandgap voltage reference of described zero-temperature coefficient is converted into the output of low-noise gap reference voltage.
2. circuit according to claim 1 is characterized in that: described low-pass filter comprises PMOS pipe, the 2nd PMOS pipe, first electric capacity;
Described PMOS pipe source electrode is connected with the non-earth terminal of described first resistance, and drain electrode is connected substrate ground connection with described low-pass filter output terminal;
Described the 2nd PMOS pipe source electrode is connected with the non-earth terminal of described first resistance, drain electrode is connected with described low-pass filter output terminal, described the 2nd PMOS pipe is opened when described current-type band gap reference voltage source starts, and closes after described current-type band gap reference voltage source startup finishes;
Described first electric capacity, one end is connected other end ground connection with described low-pass filter output terminal.
3. circuit according to claim 2, it is characterized in that, this circuit also comprises fast start circuit, and described fast start circuit is used for the outside enable signal of described current-type band gap reference voltage source is converted into the substrate that quick enabling signal exports described the 2nd PMOS pipe to.
4. circuit according to claim 3 is characterized in that, described fast start circuit comprises first not gate, second not gate, the 3rd not gate, the 4th not gate, second resistance, second electric capacity, rejection gate;
Described first not gate, second not gate connect successively;
Described second resistance, one end connects the described second non-gate output terminal, and an end connects described the 3rd not gate input end;
Described second electric capacity, one end connects described the 3rd not gate input end, an end ground connection;
Described the 3rd not gate, the 4th not gate connect successively;
The input end of described rejection gate connects the output terminal of described first not gate, the output terminal of described the 4th not gate respectively, and described rejection gate is exported described quick enabling signal.
5. circuit according to claim 1, it is characterized in that, described current-type band gap reference voltage source comprises first triode (214), second triode (215), the 3rd resistance (201), the 4th resistance (205), the 5th resistance (206), operational amplifier (207), the 3rd PMOS manages (208), and the 4th PMOS manages (209), and the 5th PMOS manages (210), the 6th PMOS manages (211), the 7th PMOS manages (214), and the 8th PMOS manages (215), NMOS pipe, the 2nd NMOS pipe, at least one exports branch road;
Described the 3rd PMOS pipe, the 5th gate pmos extremely all link to each other the equal input service voltage of source electrode with described operational amplifier output terminal;
Described the 4th PMOS pipe source electrode links to each other with the drain electrode of described the 3rd PMOS pipe, and grid extremely links to each other with described the 6th gate pmos, and drain electrode links to each other with described operational amplifier negative input;
Described the 6th PMOS pipe source electrode links to each other with the drain electrode of described the 5th PMOS pipe, and drain electrode links to each other with described operational amplifier positive input;
Described first transistor emitter links to each other base stage, grounded collector with described operational amplifier negative input;
Described second transistor emitter links to each other base stage, grounded collector by described the 3rd resistance with described operational amplifier positive input;
The area ratio of the area of described first triode and described second triode is 1:n, and n is positive integer;
Described the 4th resistance one end connects described operational amplifier negative input, other end ground connection;
Described the 5th resistance one end connects described operational amplifier positive input, other end ground connection;
Described the 7th gate pmos utmost point connects described the 5th gate pmos utmost point, described output branch road input end, source electrode input service voltage, and drain electrode connects the drain electrode of described NMOS pipe;
Described the 8th gate pmos utmost point connects described the 6th gate pmos utmost point, described output branch road input end, source electrode input service voltage, and drain electrode connects the drain electrode of described the 2nd NMOS pipe;
A described NMOS tube grid links to each other source ground with drain electrode;
Described the 2nd NMOS tube grid links to each other source ground with a described NMOS tube grid;
Described output branch road is exported the electric current of described band temperature coefficient.
6. circuit according to claim 5 is characterized in that, described output branch road comprises that first branch road PMOS pipe (212), the second branch road PMOS manage (213);
Described first branch road PMOS pipe source electrode input service voltage, grid extremely links to each other with described the 7th gate pmos, and drain electrode connects the source electrode of the described second branch road PMOS pipe;
The grid of the described second branch road PMOS pipe connects described the 8th gate pmos utmost point, the electric current of the described band temperature coefficient of drain electrode output.
7. circuit according to claim 5, it is characterized in that: described current-type band gap reference voltage source comprises two or more output branch roads, the electric current of the band temperature coefficient of described output branch road output is isolated mutually, all is converted into the output of low-noise gap reference voltage through described first resistance, described low-pass filter.
8. according to each described circuit of claim 1-7, it is characterized in that: described first resistance is adjustable, and described circuit is exported the low-noise gap reference voltage source of different magnitudes of voltage.
9. according to each described circuit of claim 1-7, it is characterized in that: described circuit is used to the voltage controlled oscillator in the radio frequency chip, and the one or more modules in digital compensation crystal oscillator or the phaselocked loop provide the low-noise gap reference voltage source.
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| CN110716605B (en) * | 2019-10-14 | 2020-11-17 | 西安理工大学 | Quick start PTAT current source based on operational amplifier positive feedback mechanism |
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| CN115113670A (en) * | 2021-03-23 | 2022-09-27 | 圣邦微电子（北京）股份有限公司 | Low dropout linear regulator |
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