CN110262622A - A kind of band gap reference with quick start and high PSRR - Google Patents
A kind of band gap reference with quick start and high PSRR Download PDFInfo
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- CN110262622A CN110262622A CN201910600483.1A CN201910600483A CN110262622A CN 110262622 A CN110262622 A CN 110262622A CN 201910600483 A CN201910600483 A CN 201910600483A CN 110262622 A CN110262622 A CN 110262622A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
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Abstract
The present invention discloses a kind of band gap reference with quick start and high PSRR, belongs to technical field of integrated circuits.The band gap reference with quick start and high PSRR includes band gap reference major loop, for generating reference voltage VREF；Feed-forward noise cancellation module, for reducing power supply noise in Mid Frequency to reference voltage VREFInfluence；Output impedance enhances module, for improving reference voltage VREFIn the PSRR characteristic of low-frequency range；High frequency filter module, for improving reference voltage VREFIn the PSRR characteristic of high band.In the case where not increasing the band gap reference starting time or reducing outputting reference voltage accuracy, noise and PSRR characteristic of the band gap reference in full frequency band are greatly improved.Low-frequency range PSRR characteristic can be improved in output impedance enhancing module, and feed-forward noise cancellation module noise capable of reducing power source is in Mid Frequency to reference voltage VREFInfluence, High frequency filter module can not increase starting the time in the case where promoted high band PSRR characteristic.
Description
Technical field
The present invention relates to technical field of integrated circuits, in particular to a kind of band-gap reference with quick start and high PSRR
Source.
Background technique
Bandgap voltage reference is widely used in simulation, mixed signal and radio frequency as the basic module in circuit design
In System on Chip/SoC.It, must be in very wide frequency range all for the band gap reference being applied in mixed signal chip
There is high PSRR to inhibit to couple the noise to come from high-speed figure module.Property of the precision of band gap reference to whole chip
Can have a significant impact, it is therefore necessary to which there is high PSRR and low-temperature coefficient.In addition to high PSRR and high output voltage precision, band gap base
Quasi- source must also have the characteristic of quick start, with meet chip-on communication system, LDO (low dropout regulator, it is low
Pressure difference linear voltage regulator) and PLL (Phase Locked Loop, phaselocked loop) etc. there is particular/special requirement to answer the chip starting time
Use occasion.
At present usually by metal-oxide-semiconductor channel length in increase current mirror to improve band gap reference PSRR, while reducing it
Intrinsic noise, but this method will lead to the increase and the decline of PSRR performance in high frequency of band gap reference starting time；It can also
By cascode structure to improve output impedance, to increase PSRR, but the circuit output amplitude of oscillation can be reduced and be not suitable for low
Press application.It is special finally the PSRR of circuit in high frequency can be improved by increasing filter in band-gap reference source output terminal
Property, but this method significantly increases the circuit start time.Therefore it is limited to PSRR, noise and the compromise characteristic for starting the time,
There are many challenges in the design of traditional bandgap a reference source.
Traditional bandgap benchmark source structure is as shown in Figure 1, it is based on PTAT (with absolute temperature is proportional) electric current and CTAT
After the summation of (being inversely proportional with absolute temperature) electric current, outputting reference voltage needed for being obtained after summation gained electric current injection resistance R4.
Final output reference voltage VREFAs shown in formula (1):
The V in formula (1)TIt is thermal voltage；N represents the emitter area ratio of triode Q2 and Q1, VEB(Q1)For triode Q1's
The pressure difference of emitter and base stage.
Summary of the invention
The purpose of the present invention is to provide a kind of band gap reference with quick start and high PSRR, to solve to exist at present
In the case where not increasing the band gap reference starting time or reducing outputting reference voltage accuracy, band gap reference can not be promoted complete
The problem of noise and PSRR characteristic in frequency range.
In order to solve the above technical problems, the present invention provides a kind of band gap reference with quick start and high PSRR, packet
Band gap reference major loop is included, for generating reference voltage VREF；The band gap reference major loop includes:
PMOS tube MP1 and MP2, triode Q1 and Q2, resistance R1~R4 and operational amplifier A0；Wherein,
One end of the resistance R1 is grounded, the negative input end of another termination operational amplifier A0；The resistance R3's
One end ground connection, the positive input terminal of another termination operational amplifier A0；The collector and base stage of the triode Q1 and Q2 is equal
Ground connection, the emitter of the triode Q1 connect the negative input end of the operational amplifier A0, and the emitter of the triode Q2 is logical
Cross the positive input terminal that the resistance R2 meets the operational amplifier A0；The grid end of the PMOS tube MP1 and MP2 connects the operation
The output end of amplifier A0, source meet power vd D；One end of the resistance R4 is grounded, another termination output port VREF；
The band gap reference with quick start and high PSRR further include:
Feed-forward noise cancellation module reduces power supply noise in Mid Frequency to reference voltage VREFInfluence；
Output impedance enhances module, improves reference voltage VREFIn the PSRR characteristic of low-frequency range；
High frequency filter module improves reference voltage VREFIn the PSRR characteristic of high band.
Optionally, the feed-forward noise cancellation module includes resistance R5, PMOS tube MP3 and MP6；Wherein,
A termination power vd D of the resistance R5, another termination PMOS tube MP6 source；The PMOS tube MP3 source
Power vd D is met, grid end connects the PMOS tube MP6 drain terminal；
The PMOS tube MP2 grid end and the PMOS tube MP3 grid end interconnect, and the PMOS tube MP6 grid end and drain terminal connect
Between the PMOS tube MP2 grid end and the PMOS tube MP3 grid end.
Optionally, the output impedance enhancing module includes operational amplifier A1, PMOS tube MP4 and MP5；The PMOS tube
The grid end of MP4 and the grid end of MP5 connect the output end of the operational amplifier A1 jointly；The source of the PMOS tube MP5 connects described
The negative input end of operational amplifier A1；
The PMOS tube MP4 drain terminal is grounded by the resistance R1, and the negative input of the operational amplifier A0 terminates at institute
It states between PMOS tube MP4 drain terminal and the resistance R1；The PMOS tube MP5 source connects the PMOS tube MP2 drain terminal.
Optionally, the High frequency filter module includes NMOS tube MN1 and MN2, PMOS tube MP7, capacitor C1 and C2, resistance R6
And R7；Wherein,
The PMOS tube MP7 source meets power vd D, and drain terminal connects the NMOS tube MN1 grid end；The NMOS tube MN1 leakage
End is grounded by the capacitor C1, and source is grounded after passing through the resistance R6 and resistance R4；The NMOS tube MN2 source
Power vd D, drain terminal ground connection are met by resistance R7, grid end meets output port VREF；The PMOS tube MP7 grid terminate at the electricity
It hinders between R7 and the NMOS tube MN2 source；PMOS tube MP7 grid end and the NMOS tube described in the mono- end Jie of capacitor C2
Between MN2 source, another termination power vd D.
A kind of band gap reference with quick start and high PSRR, including band gap reference master are provided in the present invention
Loop, feed-forward noise cancellation module, output impedance enhancing module and High frequency filter module；The band gap reference major loop is used for
Generate reference voltage VREF；The feed-forward noise cancellation module is for reducing power supply noise in Mid Frequency to reference voltage VREFShadow
It rings；The output impedance enhancing module is for improving reference voltage VREFIn the PSRR characteristic of low-frequency range；The High frequency filter module
For improving reference voltage VREFIn the PSRR characteristic of high band.
The invention has the benefit that
In the case where not increasing the band gap reference starting time or reducing outputting reference voltage accuracy, band is greatly improved
Noise and PSRR characteristic of the gap a reference source in full frequency band.Low-frequency range PSRR characteristic can be improved in output impedance enhancing module, feedovers
Noise cancellation module noise capable of reducing power source is in Mid Frequency to reference voltage VREFInfluence, High frequency filter module can not increase
High band PSRR characteristic is promoted in the case where starting the time.
Detailed description of the invention
Fig. 1 is traditional bandgap reference source circuit structural schematic diagram；
Fig. 2 is the band-gap reference source circuit structural schematic diagram provided by the invention with quick start and high PSRR.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to a kind of band gap with quick start and high PSRR proposed by the present invention
A reference source is described in further detail.According to following explanation and claims, advantages and features of the invention will be become apparent from.It needs
Illustrate, attached drawing is all made of very simplified form and using non-accurate ratio, only to convenient, lucidly auxiliary is said
The purpose of the bright embodiment of the present invention.
Embodiment one
The present invention provides a kind of band gap reference with quick start and high PSRR, circuit structure are as shown in Figure 2.
The band gap reference with quick start and high PSRR include band gap reference major loop 1, feed-forward noise cancellation module 2,
Output impedance enhances module 3 and High frequency filter module 4, specifically, the band gap reference major loop 1 is for generating reference voltage
VREF；The feed-forward noise cancellation module 2 is for reducing power supply noise in Mid Frequency to reference voltage VREFInfluence；The output
Impedance enhancing module 3 is for improving reference voltage VREFIn the PSRR characteristic of low-frequency range；The High frequency filter module 4 is for improving
Reference voltage VREFIn the PSRR characteristic of high band.
Specifically, the band gap reference major loop 1 include PMOS tube MP1 and MP2, triode Q1 and Q2, resistance R1~
R4 and operational amplifier A0；Wherein, one end ground connection of the resistance R1, the negative input of another termination operational amplifier A0
End；One end of the resistance R3 is grounded, the positive input terminal of another termination operational amplifier A0；The triode Q1's and Q2
Collector and base stage are grounded, and the emitter of the triode Q1 connects the negative input end of the operational amplifier A0, three pole
The emitter of pipe Q2 connects the positive input terminal of the operational amplifier A0 by the resistance R2；The grid of the PMOS tube MP1 and MP2
End connects the output end of the operational amplifier A0, and source meets power vd D；One end of the resistance R4 is grounded, another termination
Output port VREF。
Please continue to refer to Fig. 2, the feed-forward noise cancellation module 2 includes resistance R5, PMOS tube MP3 and MP6；Wherein, institute
State a termination power vd D of resistance R5, another termination PMOS tube MP6 source；The PMOS tube MP3 source meets power vd D,
Grid end connects the PMOS tube MP6 drain terminal；The PMOS tube MP2 grid end and the PMOS tube MP3 grid end interconnect, the PMOS tube
MP6 grid end and drain terminal connect between the PMOS tube MP2 grid end and the PMOS tube MP3 grid end.
Specifically, the output impedance enhancing module 3 includes operational amplifier A1, PMOS tube MP4 and MP5；The PMOS
The grid end of pipe MP4 and the grid end of MP5 connect the output end of the operational amplifier A1 jointly；The source of the PMOS tube MP5 meets institute
State the negative input end of operational amplifier A1；The PMOS tube MP4 drain terminal is grounded by the resistance R1, the operational amplifier A0
Negative input terminate between the PMOS tube MP4 drain terminal and the resistance R1；The PMOS tube MP5 source connects the PMOS tube
MP2 drain terminal.
Specifically, the High frequency filter module 4 includes NMOS tube MN1 and MN2, PMOS tube MP7, capacitor C1 and C2, resistance
R6 and R7；Wherein, the PMOS tube MP7 source meets power vd D, and drain terminal connects the NMOS tube MN1 grid end；The NMOS tube
MN1 drain terminal is grounded by the capacitor C1, and source is grounded after passing through the resistance R6 and resistance R4；The NMOS tube
MN2 source meets power vd D, drain terminal ground connection by resistance R7, and grid end meets output port VREF；The PMOS tube MP7 grid terminate at
Between the resistance R7 and the NMOS tube MN2 source；PMOS tube MP7 grid end described in the mono- end Jie of capacitor C2 and described
Between NMOS tube MN2 source, another termination power vd D.
The working principle of band gap reference provided by the invention with quick start and high PSRR are as follows:
The analysis of band gap reference major loop:
The present invention has the working principle of the band gap reference major loop in the band gap reference of quick start and high PSRR
It is identical as traditional bandgap reference source circuit working principle shown in FIG. 1.By operational amplifier A0 to the pincers of its positive-negative input end
Position effect, generates PTAT current using resistance R2, generates CTAT current using resistance R3, gained PTAT and CTAT current are summed
Final required reference voltage V is generated in the upper end resistance R4 afterwardsREF, VREFExpression formula is identical as formula (1).
Feed-forward noise cancellation module analyzes (Mid Frequency):
PMOS tube MP6 is for eliminating the noise signal being coupled between PMOS tube MP3 grid source.Resistance R5 is for maintaining operation
The gain of amplifier A0 prevents operational amplifier A0 gain logical by PMOS tube MP6 (connecting with diode) provided low-resistance
Road influences excessive.After increasing the feed-forward noise cancellation module, in Mid Frequency circuit PSRR (power supply rejection ratio)
As shown in formula (2):
In formula (2), Δ VDDRepresent the small scale ripple source introduced by power vd D；ΔVREFSmall scale ripple source is represented to band
The influence of gap a reference source output；Gm(MP3)Represent PMOS tube MP3 mutual conductance；rds(MP3) PMOS tube MP3 output impedance is represented；β is represented
Voltage gain of the small scale ripple source that power vd D is introduced from PMOS tube MP3 source to its grid end.Due to(Represent the output impedance of operational amplifier A0), therefore β ≈ 1, in formula (2)It is representative
Gain is zero, and final feed-forward noise cancellation module reduces power supply noise in Mid Frequency to reference voltage VREFInfluence.
Output impedance enhances module analysis (low-frequency range):
MP1, MP2 and MP3 output impedance need to be increased to improve circuit PSRR characteristic, to weaken channel-length modulation pair
The influence of benchmark output.Operational amplifier A1, MP4 and MP5 ensure that pressure difference is steady state value between current mirror drain-source by feedback, from
And enhance current mirror output impedance.After increasing output impedance enhancing module, circuit output impedance ROUTAs shown in formula (3):
ROUT=(rds(MP3)//R4)(1+Av(A1)) (3)
A in formula (3)v(A1)Represent the gain of operational amplifier A1；rds(MP3)Represent PMOS tube MP3 output impedance.
Circuit PSRR (power supply rejection ratio) under low frequency at this timeAs shown in formula (4):
PSRR in formula (4)A1Represent the PSRR of operational amplifier A1；Gm(MP3)Represent PMOS tube MP3 mutual conductance；rds(MP3)It represents
PMOS tube MP3 output impedance；It can be seen that from formula (4), output impedance enhancing module makes reference voltage VREFIt is mentioned in the PSRR of low-frequency range
High 1+Av(A1)Times.
High frequency filter module analysis (high band):
When reference voltage is not set up, MN2 is not opened, so MN1 is turned off, capacitor C1 is not attached to output port VREF,
The benchmark starting time is not influenced by capacitor C1, can meet Fast Starting.
After reference voltage is established, MN2 is opened, and MP7 pipe grid end voltage is pulled down by MN2, is acted on MN1 by MP7 and is turned on,
Capacitor C1 is linked into output port.Finally in front end capacitor C1 to output port VREFIt is filtered, improves in high band
PSRR characteristic.
In conclusion the present invention is not the case where increasing the band gap reference starting time or reducing outputting reference voltage accuracy
Under, greatly improve noise and PSRR characteristic of the band gap reference in full frequency band.Low frequency can be improved in output impedance enhancing module
Section PSRR characteristic, feed-forward noise cancellation module noise capable of reducing power source is in Mid Frequency to reference voltage VREFInfluence, High frequency filter
Module can promote high band PSRR characteristic in the case where not increasing the starting time.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (4)
1. a kind of band gap reference with quick start and high PSRR, including band gap reference major loop, for generating benchmark
Voltage VREF；The band gap reference major loop includes:
PMOS tube MP1 and MP2, triode Q1 and Q2, resistance R1~R4 and operational amplifier A0；Wherein,
One end of the resistance R1 is grounded, the negative input end of another termination operational amplifier A0；One end of the resistance R3
Ground connection, the positive input terminal of another termination operational amplifier A0；The collector and base stage of the triode Q1 and Q2 is grounded,
The emitter of the triode Q1 connects the negative input end of the operational amplifier A0, and the emitter of the triode Q2 passes through described
Resistance R2 connects the positive input terminal of the operational amplifier A0；The grid end of the PMOS tube MP1 and MP2 connects the operational amplifier
The output end of A0, source meet power vd D；One end of the resistance R4 is grounded, another termination output port VREF；
It is characterized in that, the band gap reference with quick start and high PSRR further include:
Feed-forward noise cancellation module reduces power supply noise in Mid Frequency to reference voltage VREFInfluence；
Output impedance enhances module, improves reference voltage VREFIn the PSRR characteristic of low-frequency range；
High frequency filter module improves reference voltage VREFIn the PSRR characteristic of high band.
2. as described in claim 1 with the band gap reference of quick start and high PSRR, which is characterized in that the feedforward is made an uproar
Sound cancellation module includes resistance R5, PMOS tube MP3 and MP6；Wherein,
A termination power vd D of the resistance R5, another termination PMOS tube MP6 source；The PMOS tube MP3 source connects electricity
Source VDD, grid end connect the PMOS tube MP6 drain terminal；
The PMOS tube MP2 grid end and the PMOS tube MP3 grid end interconnect, and the PMOS tube MP6 grid end and drain terminal connect in institute
It states between PMOS tube MP2 grid end and the PMOS tube MP3 grid end.
3. as described in claim 1 with the band gap reference of quick start and high PSRR, which is characterized in that the output resistance
Anti- enhancing module includes operational amplifier A1, PMOS tube MP4 and MP5；The grid end of the PMOS tube MP4 and the grid end of MP5 are common
Connect the output end of the operational amplifier A1；The source of the PMOS tube MP5 connects the negative input end of the operational amplifier A1；
The PMOS tube MP4 drain terminal is grounded by the resistance R1, and the negative input of the operational amplifier A0 terminates at described
Between PMOS tube MP4 drain terminal and the resistance R1；The PMOS tube MP5 source connects the PMOS tube MP2 drain terminal.
4. as described in claim 1 with the band gap reference of quick start and high PSRR, which is characterized in that the high frequency filter
Wave module includes NMOS tube MN1 and MN2, PMOS tube MP7, capacitor C1 and C2, resistance R6 and R7；Wherein,
The PMOS tube MP7 source meets power vd D, and drain terminal connects the NMOS tube MN1 grid end；The NMOS tube MN1 drain terminal is logical
The capacitor C1 ground connection is crossed, source is grounded after passing through the resistance R6 and resistance R4；The NMOS tube MN2 source passes through
Resistance R7 meets power vd D, drain terminal ground connection, and grid end meets output port VREF；The PMOS tube MP7 grid terminate at the resistance R7
Between the NMOS tube MN2 source；PMOS tube MP7 grid end and the source the NMOS tube MN2 described in the mono- end Jie of capacitor C2
Between end, another termination power vd D.
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Cited By (2)
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| CN112327988A (en) * | 2020-11-23 | 2021-02-05 | 南京英锐创电子科技有限公司 | Low dropout linear regulator and method for improving power supply rejection ratio |
| WO2023070912A1 (en) * | 2021-11-01 | 2023-05-04 | 重庆吉芯科技有限公司 | Reference voltage circuit and design method therefor |
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