CN103205815A - Solar energy mono-crystalline silicon piece flocking solution and application method thereof - Google Patents
Solar energy mono-crystalline silicon piece flocking solution and application method thereof Download PDFInfo
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- CN103205815A CN103205815A CN2013101615846A CN201310161584A CN103205815A CN 103205815 A CN103205815 A CN 103205815A CN 2013101615846 A CN2013101615846 A CN 2013101615846A CN 201310161584 A CN201310161584 A CN 201310161584A CN 103205815 A CN103205815 A CN 103205815A
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Abstract
The invention provides a solar energy mono-crystalline silicon piece flocking solution and an application method of the solar energy mono-crystalline silicon piece flocking solution. The flocking solution comprises the following components: 9.6 to 12.5g/L of NaOH, 50 to 100mL/L of ethanol, 0.25 to 2g/L of sodium ethoxide, 1 to 2g/L of vitamin, and one of 0.5 to 2.5g/L of at least one of potassium perfluoro alkyl ether carboxylate FC-5, polyoxyethylene ether, polyethylene glycol acid ester, polyol ester or lauroyl diethanol amine; and water and used as a solvent. A flocked face prepared by the method provided by the invention has good effect, pyramids of about 1-3 microns are fully and uniformly distributed on the flocked face, thus, little defect mode appears on the surface, the passivating effect of the flocked face is good, the minority carrier lifetime is prolonged, and the open-circuit voltage (Voc) (Variable Output Circuit), the short-circuit current (Isc) and a fill factor (FF) are correspondingly increased; the obtained pyramids are uniformly distributed in dimension and have no sharp edges and apex angles, therefore, the defect mode density on the surface can be greatly reduced, the passivating effect is improved, and the conversion efficiency of a solar cell can be increased.
Description
Technical field
What the present invention relates to is a kind of Woolen-making liquid and application method thereof of solar cell technical field, specifically is a kind of caustic corrosion liquid and application method thereof that obtains the wet etching solar monocrystalline silicon slice surface micro-structure of high minority carrier life time.
Background technology
Solar energy power generating is to clean most up to now and the most promising generation technology, in various fields very important use is arranged.Photovoltaic generation has reliable and secure, does not have noise, does not pollute, and energy be we can say in one period considerable time inexhaustible.Photovoltaic generation does not have the restriction of region, does not need consume fuel, is reproducible, does not need to install electric wiring, and the probability that breaks down is less, and personnel safeguard also simpler, can be in conjunction with the roof, and a lot of family expenses such as glass.The present method that is used for surface of crystalline silicon making herbs into wool has a variety of, reactive ion etching, mechanical carving groove and chemical corrosion etc., and comprehensive production cost and complex manufacturing technology degree, chemical corrosion method has obtained large-scale application in suitability for industrialized production.In addition, the monocrystaline silicon solar cell efficiency of conversion is the highest, and technology is also complete, ripe.Under lab the highest efficiency of conversion is 24.7%, and the efficient during scale production is 18%.This method mainly is that a kind of caustic corrosion liquid of preparation carries out making herbs into wool to monocrystalline silicon surface, makes monocrystalline silicon surface obtain a kind of being evenly distributed, the pyramid matte that size is more or less the same.Woolen-making liquid commonly used at present is silicate (water glass or potassium silicate), caustic alkali (sodium hydroxide or potassium hydroxide), and Virahol or ethanol, deionized water, and minor amounts of additives is formed.The effect of this Woolen-making liquid is not very good, and the stability of making herbs into wool is not fine, and the pyramidal homogeneity after the making herbs into wool is bad, and the pyramid on surface has sharp-pointed seamed edge and drift angle, and the minority carrier life time of this matte is often not high.
The defective that the technology of present industrial use exists mainly is that the monocrystalline silicon surface pyramid size of alkali lye making herbs into wool is inhomogeneous, the Great Pyramid size can reach 4～6 μ m, little pyramid is of a size of about 1 μ m, and size dimension differs greatly, and pyramid rib seamed edge drift angle is comparatively sharp-pointed.Sharp-pointed drift angle and seamed edge have very high defect state density, are easy to form the deathnium of few son, reduce minority carrier life time.In passivating process, between pyramid drift angle and seamed edge upper film and silicon, be easy to generate the crack and reduce passivation effect, increase electrode resistance simultaneously and increase the leakage current of electrode, be unfavorable for improving conversion efficiency of solar cell.
Summary of the invention
The present invention is directed to the prior art above shortcomings, a kind of solar monocrystalline silicon slice Woolen-making liquid and application method thereof are proposed, this Woolen-making liquid can etch 1～3 micron equally distributed pyramid structure at monocrystalline silicon surface, silicon chip minority carrier life time height after the making herbs into wool, and this Woolen-making liquid preparation method is simple, practical.
Principal character of the present invention is the pyramid structure that can etch no sharp-pointed seamed edge, drift angle at monocrystalline silicon surface, and pyramid drift angle and seamed edge are arc transition.Such body structure surface defect state density is low, and few sub-probability of recombination is little, the minority carrier life time height.And do not have sharp-pointed seamed edge and the good passivation effect of the easy acquisition of drift angle structure like this, and reduce the electrode contact resistance, improve conversion efficiency of solar cell.
The present invention is achieved by the following technical solutions:
The present invention relates to a kind of solar monocrystalline silicon slice Woolen-making liquid, its component is: at least a in perfluoroalkyl ethers carboxylic acid sylvite FC-5, Soxylat A 25-7, polyoxyethylene glycol acid esters, polyol ester or the lauroyl diethanolamine of NaOH9.6～12.5g/L, ethanol 50～100mL/L, sodium ethylate 0.25～2g/L, VITAMIN 1～2g/L and 0.5～2.5g/L, solvent is water.
The present invention relates to the application method of above-mentioned solar monocrystalline silicon slice Woolen-making liquid, this Woolen-making liquid for the silicon chip behind the etch polishing, is realized the prolongation of silicon single crystal minority carrier life time.
Described silicon chip is through ultrasonic cleaning and polished finish.
Described ultrasonic cleaning refers to: with dehydrated alcohol with the ultrasonic 3-5 of silicon chip minute, front and back repeatedly twice, use temperature is that 85 ℃ and 15 ℃, specific conductivity are that the deionized water of 18 Ω/cm cleans silicon chip successively again.The purpose of cleaning mainly is to remove surface and oil contaminant, outside contamination etc.
Described polishing refers to: silicon chip is carried out being placed on sample in the solution of 25% NaOH and polishing under 78～80 ℃ temperature.
The purpose of described polishing mainly is to eliminate the physical abuse that occurs in cutting, the process of lapping;
Described corrosion refers to: adopt water-bath heating Woolen-making liquid to make temperature control at 78～80 ℃, with silicon slice corrosion 30 minutes, take out oven dry after corrosion finishes.
(SEM) observes sample surfaces by scanning electron microscope, observe pyramid size under the different parameters condition, pattern, degree of uniformity difference, by a series of experiments, find best corrosive fluid concentration proportioning, to obtain comparatively desirable matte pyramid structure.
Silicon chip is cut into 2cm * 2cm size, be placed on the copper platform, with the microstructure appearance of surface sweeping Electronic Speculum (SEM) observation silicon face, measure the silicon single crystal minority carrier life time with model SEMILABWT-2000 minority carrier life time survey meter.
Technique effect
Compared with prior art, the matte that the present invention prepares has effect preferably, and matte is covered with 1-3 μ m left and right sides pyramid, is evenly distributed, and the surface imperfection attitude is few, the matte good passivation effect, and minority carrier life time increases, open circuit voltage (V
Oc), short-circuit current (I
Sc), packing factor (FF) also increases accordingly to some extent.As shown in Figure 1, the pyramid size distribution is even, and no sharp-pointed seamed edge and drift angle reduce the defect state density on surface greatly, improve passivation effect, can improve the efficiency of conversion of solar cell.
Description of drawings
The pyramid matte SEM that Fig. 1 prepares for embodiment 1.
Embodiment
Below embodiments of the invention are elaborated, present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Embodiment 1
Monocrystalline silicon chip of solar cell Woolen-making liquid in the present embodiment, its component is: the shared proportioning of alkaline reagents NAOH is 9.6g/L, ethanol content is 50ml/L, sodium ethylate 0.3g/L, perfluoroalkyl ethers carboxylic acid sylvite FC-5, Soxylat A 25-7, polyoxyethylene glycol acid esters, polyol ester or the lauroyl diethanolamine of VITAMIN 1g/L and 0.5g/L.
The Woolen-making liquid of said ratio is contained in the water-bath temperature control at 78～80 ℃, the silicon chip after cleaning is placed in one takes out cleaning, drying behind the corrosion 30min, use scanning electron microscopic observation, obtain pyramid matte SEM as shown in Figure 1.
Described silicon chip is through ultrasonic cleaning and polished finish.
Embodiment 2
Monocrystalline silicon chip of solar cell Woolen-making liquid in the present embodiment, its component is: the shared proportioning of alkaline reagents NAOH is 11.2g/L, ethanol content is 80ml/L, sodium ethylate 1g/L, perfluoroalkyl ethers carboxylic acid sylvite FC-5, Soxylat A 25-7, polyoxyethylene glycol acid esters, polyol ester or the lauroyl diethanolamine of VITAMIN 1.3g/L and 1g/L.
The Woolen-making liquid of said ratio is contained in the water-bath temperature control at 78～80 ℃, the silicon chip after cleaning is placed in one takes out cleaning, drying behind the corrosion 30min.
Described silicon chip is through ultrasonic cleaning and polished finish.
Embodiment 3
Monocrystalline silicon chip of solar cell Woolen-making liquid in the present embodiment, its component is: the shared proportioning of alkaline reagents NAOH is 12.5g/L, ethanol content is 100ml/L, sodium ethylate 2g/L, perfluoroalkyl ethers carboxylic acid sylvite FC-5, Soxylat A 25-7, polyoxyethylene glycol acid esters, polyol ester or the lauroyl diethanolamine of VITAMIN 2g/L and 2.5g/L.
The Woolen-making liquid of said ratio is contained in the water-bath temperature control at 78～80 ℃, the silicon chip after cleaning is placed in one takes out cleaning, drying behind the corrosion 30min.
Described silicon chip is through ultrasonic cleaning and polished finish.
Claims (5)
1. solar monocrystalline silicon slice Woolen-making liquid, it is characterized in that, its component is: at least a in perfluoroalkyl ethers carboxylic acid sylvite FC-5, Soxylat A 25-7, polyoxyethylene glycol acid esters, polyol ester or the lauroyl diethanolamine of NaOH9.6～12.5g/L, ethanol 50～100mL/L, sodium ethylate 0.25～2g/L, VITAMIN 1～2g/L and 0.5～2.5g/L, solvent is water.
2. the application method of solar monocrystalline silicon slice Woolen-making liquid according to claim 1 is characterized in that, this Woolen-making liquid for the silicon chip behind the etch polishing, is realized the prolongation of silicon single crystal minority carrier life time;
Described corrosion refers to: adopt water-bath heating Woolen-making liquid to make temperature control at 78～80 ℃, with silicon slice corrosion 30 minutes, take out oven dry after corrosion finishes.
3. method according to claim 2 is characterized in that, described silicon chip is through ultrasonic cleaning and polished finish.
4. method according to claim 3, it is characterized in that, described ultrasonic cleaning refers to: with dehydrated alcohol with the ultrasonic 3-5 of silicon chip minute, front and back repeatedly twice, use temperature is that 85 ℃ and 15 ℃, specific conductivity are that the deionized water of 18 Ω/cm cleans silicon chip successively again.
5. according to the described method of claim, it is characterized in that described polishing refers to: silicon chip is carried out being placed on sample in the solution of 25% NaOH and polishing under 78～80 ℃ temperature.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103643289A (en) * | 2013-12-03 | 2014-03-19 | 上海交通大学 | Single crystal silicon surface structure based on chemical etching, and preparation and application thereof |
| CN103774239A (en) * | 2013-11-13 | 2014-05-07 | 河南科技学院 | Cleaning and wool making technology for monocrystal silicon chip |
| WO2015032154A1 (en) * | 2013-09-04 | 2015-03-12 | 常州时创能源科技有限公司 | Polycrystalline silicon wafer texturizing additive and use thereof |
| CN104562011A (en) * | 2013-10-09 | 2015-04-29 | 上海太阳能工程技术研究中心有限公司 | Texturing auxiliary agent for polycrystalline silicon wafer and texturing process thereof |
| CN106521636A (en) * | 2016-12-30 | 2017-03-22 | 德清丽晶能源科技有限公司 | Single crystal wafer texturing additive |
| CN106835288A (en) * | 2016-12-30 | 2017-06-13 | 德清丽晶能源科技有限公司 | A kind of etching method of monocrystalline silicon piece |
| CN114133876A (en) * | 2021-11-04 | 2022-03-04 | 西安蓝桥新能源科技有限公司 | Alkali polishing auxiliary agent for small tower-shaped silicon chip and application thereof |
| CN117438502A (en) * | 2023-11-28 | 2024-01-23 | 江苏润阳世纪光伏科技有限公司 | Preparation method of monocrystalline silicon wafer textured surface with light conversion and full-angle light trapping |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2015032154A1 (en) * | 2013-09-04 | 2015-03-12 | 常州时创能源科技有限公司 | Polycrystalline silicon wafer texturizing additive and use thereof |
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| CN103643289A (en) * | 2013-12-03 | 2014-03-19 | 上海交通大学 | Single crystal silicon surface structure based on chemical etching, and preparation and application thereof |
| CN103643289B (en) * | 2013-12-03 | 2016-07-06 | 上海交通大学 | The monocrystalline silicon surface structure of chemically based etching and preparation thereof and application |
| CN106521636A (en) * | 2016-12-30 | 2017-03-22 | 德清丽晶能源科技有限公司 | Single crystal wafer texturing additive |
| CN106835288A (en) * | 2016-12-30 | 2017-06-13 | 德清丽晶能源科技有限公司 | A kind of etching method of monocrystalline silicon piece |
| CN114133876A (en) * | 2021-11-04 | 2022-03-04 | 西安蓝桥新能源科技有限公司 | Alkali polishing auxiliary agent for small tower-shaped silicon chip and application thereof |
| CN114133876B (en) * | 2021-11-04 | 2022-12-20 | 西安蓝桥新能源科技有限公司 | Alkali polishing auxiliary agent for small tower-shaped silicon chip and application thereof |
| CN117438502A (en) * | 2023-11-28 | 2024-01-23 | 江苏润阳世纪光伏科技有限公司 | Preparation method of monocrystalline silicon wafer textured surface with light conversion and full-angle light trapping |
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Application publication date: 20130717 |