CN103176317B - 液晶像素电极结构、阵列基板及显示装置 - Google Patents

液晶像素电极结构、阵列基板及显示装置 Download PDF

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CN103176317B
CN103176317B CN201310118866.8A CN201310118866A CN103176317B CN 103176317 B CN103176317 B CN 103176317B CN 201310118866 A CN201310118866 A CN 201310118866A CN 103176317 B CN103176317 B CN 103176317B
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文锺源
黄强
朴台圭
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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Abstract

本发明公开了一种液晶像素电极结构、阵列基板及显示装置，涉及显示技术领域。所述电极结构包括：第一像素电极和第二像素电极、以及公共电极，所述第一像素电极和第二像素电极依次间隔排布，且位于所述公共电极上方，所述第一像素电极和第二像素电极的驱动电压不同，且分别与所述公共电极之间形成相等的电压差绝对值。本发明中两种像素电极相互可以产生电场，同时这两种电极也可以分别与公共电极产生电场，两种电场综合起来可降低驱动电压的需求，减少能耗。此外，本发明中公共电极采用狭缝电极，光透过率得到提升。

Description

液晶像素电极结构、阵列基板及显示装置
技术领域
本发明涉及显示技术领域，具体涉及一种液晶像素电极结构、阵列基板及显示装置。
背景技术
在液晶显示技术中，AD-SDS（ADvancedSuperDimensionSwitch，高级超维场转换技术，简称ADS）模式以透过率高、宽视角、响应速度快和功耗低的优点逐渐取代TN（TwistedNematic）液晶模式，成为液晶显示领域的重要技术之一。
基于ADS模式的显示器通过同一平面内狭缝电极边缘所产生的电场以及狭缝电极层与板状电极层间产生的电场形成多维电场，使液晶盒内狭缝电极间、电极正上方所有取向液晶分子都能够产生旋转，从而提高了液晶工作效率并增大了透光效率。高级超维场转换技术可以提高TFT-LCD产品的画面品质，具有高分辨率、高透过率、低功耗、宽视角、高开口率、低色差、无挤压水波纹（pushMura）等优点。
现有ADS模式显示面板的结构如图1所示，包括彩膜基板2、阵列基板3、以及两者对盒之后灌注的液晶1，其中阵列基板3还包括像素电极4(相当于狭缝电极)、公共电极5、以及钝化层6。图1中虚线左边表示未加电压状态，右边表示加电压状态。当加电压时，盒内电场线呈抛物线状，液晶分子在电场线作用下发生扭曲旋转，从而达到控制光线的目的。现有ADS模式电极结构的透过率特性如图2中曲线所示，光透过率在像素电极的边缘处最大，而在相邻像素电极之间和像素电极中间处，光透过率极小。
在现有的ADS模式中，采用单个像素电极完全覆盖公共电极的设计，电极通常是一层ITO薄膜，ITO透过率约为0.91，光线经过像素电极和公共电极两层ITO薄膜的透过率约为0.80，损耗接近0.20。此外，现有ADS模式中相邻像素电极之间和像素电极的中间位置电场较弱，需要较高的驱动电压以保证液晶驱动。
发明内容
（一）要解决的技术问题
本发明要解决的技术问题是：提供一种能够提高现有ADS模式透过率，并降低驱动电压，减少能耗的液晶像素电极结构、阵列基板及显示装置。
（二）技术方案
为解决上述问题，本发明提供一种液晶像素电极结构，其包括：第一像素电极和第二像素电极、以及公共电极，所述第一像素电极和第二像素电极依次间隔排布，且位于所述公共电极上方，所述第一像素电极和第二像素电极的驱动电压不同，且分别与所述公共电极之间形成相等的电压差绝对值。
优选地，所述公共电极为狭缝电极。
优选地，所述狭缝电极的开口位置对应于所述第一像素电极或者所述第二像素电极的位置。
优选地，所述开口的面积小于相应的所述第一像素电极或者所述第二像素电极的面积。
优选地，所述第一像素电极和第二像素电极由ITO材料制成。
优选地，所述公共电极由ITO材料制成。
优选地，所述电极结构还包括位于所述公共电极与所述第一像素电极及第二像素电极之间的钝化层。
本发明还提供一种阵列基板，包括上述的电极结构。
本发明还提供一种显示装置，包括上述的阵列基板。
（三）有益效果
本发明中两种像素电极相互可以产生电场，同时这两种电极也可以分别与公共电极产生电场，两种电场综合起来可降低驱动电压的需求，减少能耗。此外，本发明中公共电极采用狭缝电极，光透过率得到提升。
附图说明
图1是现有ADS模式显示面板的结构图；
图2是现有ADS模式电极结构的透过率特性曲线；
图3是本发明提供的一种ADS模式下的液晶像素电极结构图；
图4是本发明一种实施例中所需提供的驱动电压的示意图；
图5是本发明提供的一种ADS模式电极结构的透过率特性曲线。
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
图3是本发明提供的一种ADS模式下的液晶像素电极结构图，包括：第一像素电极7和第二像素电极8、以及公共电极9，所述第一像素电极7和第二像素电极8依次间隔排布，且位于所述公共电极9上方。
所述第一像素电极7和第二像素电极8的驱动电压不同，它们之间会产生电场，其电场线标记为10。同时，第一像素电极7和第二像素电极8又分别与公共电极9之间产生电场，其电场线标记为11。
本发明中，第一像素电极7和第二像素电极8分别与公共电极9之间形成相等的电压差。例如，为第一像素电极7和第二像素电极8提供的驱动电压分别为8v和0v，为公共电极9提供的驱动电压为4v，那么第一像素电极7和第二像素电极8之间的电压差为8v，而这两种像素电极与公共电极9之间的电压差绝对值均为4v。图4是本实施例所需提供的驱动电压的示意图。
现有ADS模式中相邻像素电极之间和像素电极的中间位置电场较弱，需要较高的驱动电压来保证液晶驱动。本发明中得益于第一像素电极7和第二像素电极8之间的电场作用，通过两种电场（10和11）的综合作用，降低了对驱动电压的需求，减少了能耗。
其中，第一像素电极7和第二像素电极8由ITO材料制成，公共电极9也由ITO材料制成，所述电极结构还包括位于公共电极9与第一像素电极7及第二像素电极8之间的钝化层。
本发明中的公共电极9为狭缝电极，所述狭缝电极的开口位置对应于所述第一像素电极7或者第二像素电极8的位置。较优地，所述开口的面积小于相应的第一像素电极7或者第二像素电极8的面积。
由于公共电极被刻蚀掉一部分区域，使得光线无需透过两层ITO电极，提升了透过率。同时，由于公共电极的面积减少，可降低储存电容C，减小耗电量，进一步降低能耗。其中存储电容，ε为介电常数，S为公共电极与相应的像素电极重叠的面积，d为公共电极与像素电极之间的距离。
本发明提供的ADS模式电极结构的透过率特性曲线如图5所示，从图中可以看出，与现有技术相比，相邻像素电极之间和像素电极中间处的光透过率得到了提升。
本发明还提供一种阵列基板，所述阵列基板包括上述的电极结构。本发明还提供一种显示装置，所述显示装置包括上述的阵列基板。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和替换，这些改进和替换也应视为本发明的保护范围。

Claims (4)

1.一种液晶像素电极结构，其特征在于，包括：第一像素电极和第二像素电极、以及公共电极，所述第一像素电极和第二像素电极依次间隔排布，且位于所述公共电极上方，所述第一像素电极和第二像素电极的驱动电压不同，且分别与所述公共电极之间形成相等的电压差绝对值；其中，所述公共电极为狭缝电极，所述狭缝电极的开口位置对应于所述第一像素电极或者所述第二像素电极的位置，且所述开口的面积小于相应的所述第一像素电极或者所述第二像素电极的面积；所述公共电极由ITO材料制成；所述电极结构还包括位于所述公共电极与所述第一像素电极及第二像素电极之间的钝化层。
2.如权利要求1所述的液晶像素电极结构，其特征在于，所述第一像素电极和第二像素电极由ITO材料制成。
3.一种阵列基板，其特征在于，包括如权利要求1或2所述的液晶像素电极结构。
4.一种显示装置，其特征在于，包括如权利要求3所述的阵列基板。
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