CN103176116B - 一种半导体器件测试装置及其测试方法 - Google Patents
一种半导体器件测试装置及其测试方法 Download PDFInfo
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- CN103176116B CN103176116B CN201310054142.1A CN201310054142A CN103176116B CN 103176116 B CN103176116 B CN 103176116B CN 201310054142 A CN201310054142 A CN 201310054142A CN 103176116 B CN103176116 B CN 103176116B
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- 238000012360 testing method Methods 0.000 title claims abstract description 174
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000010998 test method Methods 0.000 title claims abstract description 10
- 239000000523 sample Substances 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 238000011084 recovery Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
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CN103176116A CN103176116A (zh) | 2013-06-26 |
CN103176116B true CN103176116B (zh) | 2016-01-20 |
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CN106291264A (zh) * | 2015-05-13 | 2017-01-04 | 国网智能电网研究院 | 一种电力电子芯片的高压检测装置和高压检测方法 |
CN110231501B (zh) * | 2019-01-18 | 2024-03-19 | 全球能源互联网研究院有限公司 | 一种探针卡、包括探针卡的测试设备、测试方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1380811A (zh) * | 2002-04-19 | 2002-11-20 | 大连理工大学 | 用于等离子体诊断的复合探针 |
CN101056493A (zh) * | 2007-05-10 | 2007-10-17 | 东北大学 | 一种低温等离子体诊断装置 |
CN201490168U (zh) * | 2009-04-03 | 2010-05-26 | 中茂电子(深圳)有限公司 | 具有静电放电装置的探针检测机台 |
CN201740845U (zh) * | 2010-05-11 | 2011-02-09 | 扬州杰利半导体有限公司 | 半导体芯片耐高压测试装置 |
JP2011252792A (ja) * | 2010-06-02 | 2011-12-15 | Fuji Electric Co Ltd | 試験装置および試験方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3983123B2 (ja) * | 2002-07-11 | 2007-09-26 | シャープ株式会社 | 半導体検査装置及び半導体検査方法 |
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- 2013-02-20 CN CN201310054142.1A patent/CN103176116B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1380811A (zh) * | 2002-04-19 | 2002-11-20 | 大连理工大学 | 用于等离子体诊断的复合探针 |
CN101056493A (zh) * | 2007-05-10 | 2007-10-17 | 东北大学 | 一种低温等离子体诊断装置 |
CN201490168U (zh) * | 2009-04-03 | 2010-05-26 | 中茂电子(深圳)有限公司 | 具有静电放电装置的探针检测机台 |
CN201740845U (zh) * | 2010-05-11 | 2011-02-09 | 扬州杰利半导体有限公司 | 半导体芯片耐高压测试装置 |
JP2011252792A (ja) * | 2010-06-02 | 2011-12-15 | Fuji Electric Co Ltd | 試験装置および試験方法 |
Non-Patent Citations (1)
Title |
---|
发光二极管及半导体激光器特性参数测试研究;刘立明;《中国优秀硕士学位论文全文数据库 信息科技辑》;20070815(第2期);I135-118 * |
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Effective date of registration: 20200109 Address after: 211106 Building 2, No.19, Chengxin Avenue, Jiangning Economic and Technological Development Zone, Nanjing City, Jiangsu Province (Jiangning Development Zone) Patentee after: Nanruilianyan Semiconductor Co.,Ltd. Address before: 102209 Beijing City, the future of science and Technology City Binhe Road, No. 18, No. Patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. |
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