CN103122221B - 具有改善的预粘合加工性的各向异性导电膜和半导体装置 - Google Patents
具有改善的预粘合加工性的各向异性导电膜和半导体装置 Download PDFInfo
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- CN103122221B CN103122221B CN201210447575.9A CN201210447575A CN103122221B CN 103122221 B CN103122221 B CN 103122221B CN 201210447575 A CN201210447575 A CN 201210447575A CN 103122221 B CN103122221 B CN 103122221B
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- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29447—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29455—Nickel [Ni] as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
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KR10-2011-0121106 | 2011-11-18 | ||
KR20110121106A KR101479658B1 (ko) | 2011-11-18 | 2011-11-18 | 가압착 공정성이 개선된 이방성 도전 필름 |
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CN103122221A CN103122221A (zh) | 2013-05-29 |
CN103122221B true CN103122221B (zh) | 2015-11-11 |
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KR (1) | KR101479658B1 (zh) |
CN (1) | CN103122221B (zh) |
TW (1) | TWI626288B (zh) |
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KR101479658B1 (ko) * | 2011-11-18 | 2015-01-06 | 제일모직 주식회사 | 가압착 공정성이 개선된 이방성 도전 필름 |
US10209016B2 (en) * | 2013-03-22 | 2019-02-19 | Toyota Motor Engineering & Manufacturing North America, Inc. | Thermal energy guiding systems including anisotropic thermal guiding coatings and methods for fabricating the same |
TWI496870B (zh) * | 2013-09-10 | 2015-08-21 | Benq Materials Corp | 一種用於電子元件間電性導通的異方性導電膠 |
JP6204187B2 (ja) * | 2013-12-27 | 2017-09-27 | リンテック株式会社 | 導電性粘着剤組成物、導電性粘着シートおよび導電性粘着シートの製造方法 |
JP6026446B2 (ja) * | 2014-01-10 | 2016-11-16 | 古河電気工業株式会社 | 平角絶縁電線および電動発電機用コイル |
JP5778332B1 (ja) * | 2014-12-26 | 2015-09-16 | 古河電気工業株式会社 | 耐曲げ加工性に優れる絶縁電線、それを用いたコイルおよび電子・電気機器 |
JP5778331B1 (ja) * | 2014-12-26 | 2015-09-16 | 古河電気工業株式会社 | 絶縁電線およびコイル |
JPWO2022102573A1 (zh) * | 2020-11-10 | 2022-05-19 | ||
WO2023106400A1 (ja) * | 2021-12-10 | 2023-06-15 | 株式会社レゾナック | 回路接続用接着剤フィルム、並びに回路接続構造体及びその製造方法 |
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CN1996132A (zh) * | 2006-01-04 | 2007-07-11 | Ls电线有限公司 | 多层各向异性导电膜 |
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JPH06139824A (ja) * | 1992-10-27 | 1994-05-20 | Oki Electric Ind Co Ltd | 異方導電フィルム |
US6444305B2 (en) * | 1997-08-29 | 2002-09-03 | 3M Innovative Properties Company | Contact printable adhesive composition and methods of making thereof |
CA2596134C (en) * | 2005-01-28 | 2015-07-21 | Mmr Marketing & Management Ag Rotkreuz | Extruder system for extruding a fluid |
US7803449B2 (en) * | 2005-08-02 | 2010-09-28 | Fujifilm Corporation | Optical film and process for production the same, antireflection film and process for production the same, polarizing plate including the film, liquid crystal display device including the polarizing plate, and liquid crystal display device |
KR100673778B1 (ko) * | 2005-08-19 | 2007-01-24 | 제일모직주식회사 | 저온 속경화형 이방성 도전 필름용 조성물, 그로부터제조된 이방성 도전 필름 및 그 제조방법 |
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KR100673773B1 (ko) * | 2005-10-18 | 2007-01-24 | 제일모직주식회사 | 플루오렌계 (메타)아크릴레이트를 이용한 이방 전도성필름용 조성물 |
JP2007217503A (ja) | 2006-02-15 | 2007-08-30 | Asahi Kasei Electronics Co Ltd | 異方導電性接着フィルム |
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- 2011-11-18 KR KR20110121106A patent/KR101479658B1/ko active IP Right Grant
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2012
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- 2012-11-12 TW TW101142016A patent/TWI626288B/zh active
- 2012-11-14 JP JP2012250429A patent/JP6169347B2/ja not_active Expired - Fee Related
- 2012-11-16 US US13/679,113 patent/US8896117B2/en active Active
Patent Citations (3)
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US6409866B1 (en) * | 1999-05-28 | 2002-06-25 | Sony Chemicals Corp. | Process for mounting semiconductor device |
CN1996132A (zh) * | 2006-01-04 | 2007-07-11 | Ls电线有限公司 | 多层各向异性导电膜 |
CN102090154A (zh) * | 2008-07-11 | 2011-06-08 | 索尼化学&信息部件株式会社 | 各向异性导电薄膜 |
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KR20130055388A (ko) | 2013-05-28 |
JP2013110110A (ja) | 2013-06-06 |
US8896117B2 (en) | 2014-11-25 |
TW201329189A (zh) | 2013-07-16 |
CN103122221A (zh) | 2013-05-29 |
TWI626288B (zh) | 2018-06-11 |
KR101479658B1 (ko) | 2015-01-06 |
JP6169347B2 (ja) | 2017-07-26 |
US20130127038A1 (en) | 2013-05-23 |
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