CN103117241A - Coating method in physical etching technology - Google Patents
Coating method in physical etching technology Download PDFInfo
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- CN103117241A CN103117241A CN2013100398495A CN201310039849A CN103117241A CN 103117241 A CN103117241 A CN 103117241A CN 2013100398495 A CN2013100398495 A CN 2013100398495A CN 201310039849 A CN201310039849 A CN 201310039849A CN 103117241 A CN103117241 A CN 103117241A
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- sided tape
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Abstract
The invention discloses a coating method in a physical etching technology. The coating method includes: (1) selecting an adhesive tape: adopting a high temperature resisting polyimide double sided tape; (2) cutting the double sided tape: cutting the polyimide double sided tape into a shape which is little larger than a need-to-be-etched sample; (3) fixing the adhesive tape: peeling a protecting film on the lower surface of the polyimide double sided tape, fixedly adhering the adhesive tape on a sample table of an etching machine, and removing a protecting film on the upper surface of the adhesive tape; (4) adhering the sample: placing the need-to-be-etched sample on the polyimide double sided tape, and fixedly adhering the sample to the polyimide double sided tape via a certain of positive pressure; and (5) peeling off the tape: after the physical etching technology is finished, directly taking down a normal etched hard sample from the polyimide double sided tape, and peeling the adhesive tape off the sample table. The coating method in the physical etching technology is convenient to operate, good in heat conduction, good in etched graphs, low in cost and the like.
Description
Technical field
This patent relates to the pasting method in a kind of physical etchings technique, is specifically related to a kind of with the pasting method of the high temperature resistant two-sided tape of polyimides (polyimide) as the intermediary (bonding agent) between the cooling table top of etching and substrate.
Background technology
Physical etchings technique claims again ion beam etching, ion beam milling etc., and the basic principle that realizes physical etchings is the ion beam bombardment substrate surface of being launched by ion source, and base material atomic collision is gone out substrate surface, and Fig. 1 is the schematic diagram of ion beam etching.Because ion beam etching is directly to bombard substrate surface by the ion that ion source sends, so most energy of Ions Bombardment can be converted into heat, sample surfaces is heated up, thereby cause the etching surface attitude to change, be i.e. the temperature effect of etching.Particularly all may run into temperature effect at etching complex element crystalline material such as InP, GaAs and HgCdTe etc., comprising a lot of III-V semiconducting compound.
Due to required chronic of etching sample sometimes, the heat that Ions Bombardment produces, can make sample surfaces persistently overheating, excess Temperature may cause photoresist vitrifying, profile sphering and charing, even damage the structural property of substrate, so the temperature of Quality control is the key of physical etchings technique.Although can regulate the water temperature of the cooling circulating water machine of Quality control platform in etching process, it is controlled in a relatively low temperature range, another problem that need to pay attention to is the thermo-contact state between sample the to be carved back side and cooling etching table top.The bad of the two thermo-contact is the major reason that possible cause sample to heat up, but easily out in the cold.In order to receive heat-conducting effect preferably, general traditional method is to make the intermediary (being bonding agent) of paster between sample and cooling table top of silicone grease, silver impregnated rubber and paraffin etc.But with these oil substances pasters, its shortcoming that is difficult to overcome is arranged also, mainly contains:
What 1. be coated with can make the heat-conducting effect variation very little, produces the series of problems such as vitrifying, charing, as shown in Figure 2;
2. the glue that can make too much that is coated with overflows at substrate edge, and the etching particle can't bombard the edge pattern that is wrapped by glue, can cause the mistake of etching figure to be communicated with, as Fig. 3 (a) with (b);
3. because all there is in various degree venting in the oil substances such as silicone grease, silver impregnated rubber and paraffin, so if use can affect the vacuum degree of system to a certain extent in the high vacuum etching system;
4. the oil substances such as silicone grease, silver impregnated rubber and paraffin can cause certain remnants at substrate back after use, need to after completing, wipe totally with ether, acetone and other organic solvent etching technics, otherwise these greases remnants can bring in next step technique, and grease is the material of extremely abstaining from, should avoiding in the microelectronic techniques such as film growth.
Polyimides (English name: polyimide, PI) is the base polymer of repetitive take imide as the architectural feature group.Polyimides has been widely used in the fields such as Aeronautics and Astronautics, microelectronics, nanometer, liquid crystal, diffusion barrier, laser as a kind of special engineered material, and it has following distinctive good stability energy:
1, full aromatic polyimide is by thermogravimetric analysis, and its decomposition starting temperature is generally all 500 ℃ of left and right.By the synthetic polyimides of bibenzene tetracarboxylic dianhydride and p-phenylenediamine (PPD), heat decomposition temperature reaches 600 ℃, is one of kind that thermal stability is the highest in polymer so far.
2, polyimides can the low temperature of anti-the utmost point, as can embrittlement in the liquid helium of-269 ℃.
3, polyimides has good mechanical performance, and the tensile strength of unfilled plastics is all more than 100Mpa.As engineering plastics, modulus of elasticity is generally 3 ~ 4Gpa, and fiber can reach 200Gpa, and all the synthetic fiber of benzene dianhydride and p-phenylenediamine (PPD) can reach 500Gpa, is only second to carbon fiber.
4, the thermal coefficient of expansion of polyimides is 2 * 10
-5~ 3 * 10
-5℃, biphenyl type can reach 10
-6℃, indivedual kinds can reach 10
-7℃.
5, polyimides has very high radiation-resistant property, and its film is 5 * 10
9After the fast electron irradiation of rad, strength retention is 90%.
6, polyimides has good dielectric property, and dielectric constant is 3.4 left and right, and dielectric loss is 10
-3, dielectric strength is 100 ~ 300KV/mm, these performances still can remain on higher level in the temperature range of broadness and frequency range.
7, polyimides is nontoxic, is self-extinguishing polymer, and the rate of being fuming is low.
Discharge quantity is seldom under high vacuum for polyimides.Kapton Tape claims again the Kapton adhesive tape, is commonly called as the golden finger adhesive tape, is take polyimide film as base material, and coating high performance organo-silicon pressure sensitive adhesive is made.It has many good characteristics of polyimide material, as good in: proof voltage 3～13KV, heatproof-50～+ 300 ℃, radiation proof, high adhesion strength, docile property, cull etc. not.Because Kapton Tape has high-low temperature resistant, the advantages such as electric insulation (H level) property is good, radiation proof; be widely used in the product insulating wrappings such as transformer, lithium battery, reactor, motor, motor, capacitor and fix, what also can be used for golden finger, sandblast, application, baking vanish high temperature resistantly covers protection.
Summary of the invention
The purpose of this patent be according to Kapton Tape high temperature resistant, tensile strength is high, without cull, be adapted at the characteristics such as high vacuum environment use, in physical etchings technique, select the polyimides two-sided tape as the intermediary of paster between substrate and cooling table top, can satisfy the technological requirement that requires paster material to want good, the high temperature resistant and low venting of heat conduction in physical etchings technique.
Because the Kapton Tape mechanical strength is high, dielectric property are excellent, good stability of the dimension, have advantages of simultaneously high temperature resistant 300 degree and low venting, this patent proposes selects the polyimides two-sided tape all to be suitable for as the method for paster intermediary between substrate and the cooling table top physical etchings system for general water-cooled.Can be also very wide as the base material range of etching bonding agent with the polyimides two-sided tape, the base material that is particularly suitable for hard or has hard substrates (as the jewel sheet etc.).This patent with the polyimides two-sided tape as the flow chart of paster medium in physical etchings technique as shown in Figure 4, concrete operation step is as follows:
(1) choose adhesive tape: adopt the high temperature resistant two-sided tape of polyimides (polyimide), structure as shown in Figure 5;
(2) cutting double faced adhesive tape: the polyimides two-sided tape is cut into than the slightly large size of required etching sample or carries out cutting by the size of whole etching sample stage;
(3) fixation adhesive tape: be bonded at securely on the sample stage of etching machine after the lower surface diaphragm of polyimides two-sided tape is peeled off, then the upper surface diaphragm of adhesive tape also removed;
(4) paste sample: will need the sample of etching to be placed on the polyimides double faced adhesive tape, and in addition certain normal pressure is carried out bonding with Kapton Tape sample securely;
(5) stripping tape: after physical etchings technique is completed, can directly take off from the polyimides two-sided tape for the hard sample, then adhesive tape be rooted out totally from sample stage and got final product.Sample first one can be reinstated under the blade shovel together with the polyimides two-sided tape for the sample that some hardness are not high, then they are immersed in acetone or ethanol, both get final product natural separation after a while.
This patent has advantages of following:
1. various in style, the multi-size of Kapton Tape, the actual size of etching sample carries out cutting to the polyimides two-sided tape as required.If sample to be etched often also can cover with the sample stage of whole polyimides two-sided tape with whole etching machine.This method has well solved the series of problems that traditional paster intermediarys such as silicone grease, silver impregnated rubber and paraffin are coated with very little or bring too much;
2. discharge quantity is seldom under high vacuum due to Kapton Tape, the phenomenon of deflation of well having avoided the oil substances such as silicone grease, silver impregnated rubber and paraffin to exist in vacuum system is so the polyimides double faced adhesive tape is the desirable paster media material that uses in the high vacuum etching system;
3. the oil substances such as silicone grease, silver impregnated rubber and paraffin can cause certain remnants at substrate back, need to wipe totally by organic solvent after etching technics is completed.And Kapton Tape use after cull not, the tape stripping meron can directly carry out next step technique, has effectively avoided using the unfavorable of oil substances in microelectronic technique.
Description of drawings
Fig. 1: ion beam physical etchings schematic diagram, wherein: 1: ion source; 2: substrate; 3: sample stage.
Fig. 2: in etching jewel battery lead plate, silicone grease is coated with to get the jewel sheet edge blackout phenomenon that causes very little.
Fig. 3 (a): the silicone grease that is coated with too much overflows at substrate edge, causes accumulation.
(b): the pattern edge that is wrapped by silicone grease causes the mistake of etching figure to be communicated with.
Fig. 4: with the process chart of polyimides two-sided tape as paster medium in physical etchings technique.
Fig. 5: the polyimides double-faced adhesive tape structure, wherein: 4: the upper surface diaphragm; 5: polyimide film; 6: the lower surface diaphragm.
Fig. 6: sample to be etched is bonded on sample stage, wherein with Kapton Tape securely: 7: sample stage; 8: substrate (sample to be etched); 9: polyimide film.
Embodiment
As follows as the embodiment of paster medium in physical etchings technique with the polyimides two-sided tape:
(1) choose adhesive tape: the high temperature resistant two-sided tape of polyimides (polyimide) is various in style, various informative, needs to adopt polyimides (polyimide) two-sided tape high temperature resistant, low venting in physical etchings technique.The high temperature resistant two-sided tape dimensions of polyimides (polyimide) is a lot, generally have 10mm, 12mm, 15mm and 20mm wide etc., also can be according to actual needs to production firm's customization width specifications, very flexible, convenient.It is amber that polyimide film in the polyimide high temperature-resistant two-sided tape generally is, coated with protective film all up and down, as shown in Figure 5;
(2) cutting double faced adhesive tape: the polyimides two-sided tape is cut into than the slightly large size of required etching sample, is that the size that polyimides two-sided tape that Φ 18mm can be wide with 20mm is cut into 20mm * 20mm gets final product as: sample to be etched.If sample size to be etched is larger or quantity is many, also can whole etching sample stage be pasted covering completely with the polyimides two-sided tape;
(3) fixation adhesive tape: be bonded on the sample stage of etching machine after the diaphragm of polyimides two-sided tape lower surface is peeled off, then can slidably reciprocate several times with suitable power on Kapton Tape with hand or tweezers, bubble in adhesive tape is driven out of, until whole Kapton Tape is attached on sample stage securely, after posting, the upper surface diaphragm of adhesive tape is also removed;
(4) paste sample: will need the sample of etching to be placed on the polyimides double faced adhesive tape, and in addition certain normal pressure is bonded in sample on sample stage securely, as shown in Figure 6 together with Kapton Tape;
(5) stripping tape: after physical etchings technique is completed, can directly take off from the polyimides two-sided tape for the hard sample, then adhesive tape be peeled off from sample stage and got final product; Sample first one can be reinstated blade under the sample stage shovel together with the polyimides two-sided tape for the sample that some hardness are not high, then they are immersed in acetone or ethanol, both get final product natural separation after a while.
Claims (1)
1. the pasting method in a physical etchings technique is characterized in that comprising the following steps:
(1) choose adhesive tape: adopt the polyimide high temperature-resistant two-sided tape;
(2) cutting double faced adhesive tape: the polyimides two-sided tape is cut into than the slightly large size of required etching sample or carries out cutting by the size of whole etching sample stage;
(3) fixation adhesive tape: be bonded at securely on the sample stage of etching machine after the lower surface diaphragm of polyimides two-sided tape is peeled off, then the upper surface diaphragm of adhesive tape also removed;
(4) paste sample: will need the sample of etching to be placed on the polyimides double faced adhesive tape, and in addition certain normal pressure is carried out bonding with Kapton Tape sample securely;
(5) stripping tape: after physical etchings technique is completed, can directly take off from the polyimides two-sided tape for the hard sample, then adhesive tape be rooted out totally from sample stage and got final product; Sample first one can be reinstated under the blade shovel together with the polyimides two-sided tape for the sample that some hardness are not high, then they are immersed in acetone or ethanol, both get final product natural separation after a while.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154824A (en) * | 2015-10-21 | 2015-12-16 | 丰盛印刷（苏州）有限公司 | Chip sputtering jig and sputtering method |
| CN106054305A (en) * | 2016-08-25 | 2016-10-26 | 福建福晶科技股份有限公司 | Discharging method of true zero-order wave plate |
| CN106304826A (en) * | 2016-08-25 | 2017-01-04 | 强新正品（苏州）环保材料科技有限公司 | A kind of silica gel piece method for dismounting |
| CN113916920A (en) * | 2021-10-27 | 2022-01-11 | 长江存储科技有限责任公司 | Method for placing and picking test sample |
| CN114206030A (en) * | 2021-12-06 | 2022-03-18 | 博罗县精汇电子科技有限公司 | Production process of thin rigid-flex board |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11121902A (en) * | 1997-10-17 | 1999-04-30 | Nippon Steel Chem Co Ltd | Manufacture of both-side carrier tape |
| CN1700851A (en) * | 2004-05-18 | 2005-11-23 | 刘昇羱 | Positioning method of electronic component process |
| CN101872804A (en) * | 2010-05-21 | 2010-10-27 | 中国科学院上海技术物理研究所 | Plasma backflow forming method for photoresist micro-convex lens array for mask |
| CN102263009A (en) * | 2011-01-19 | 2011-11-30 | 沈阳芯源微电子设备有限公司 | Visual wafer centering unit |
| CN102544346A (en) * | 2010-12-24 | 2012-07-04 | 中国电子科技集团公司第十八研究所 | Bismuth telluride thermoelectric generator |
-
2013
- 2013-01-31 CN CN2013100398495A patent/CN103117241A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11121902A (en) * | 1997-10-17 | 1999-04-30 | Nippon Steel Chem Co Ltd | Manufacture of both-side carrier tape |
| CN1700851A (en) * | 2004-05-18 | 2005-11-23 | 刘昇羱 | Positioning method of electronic component process |
| CN101872804A (en) * | 2010-05-21 | 2010-10-27 | 中国科学院上海技术物理研究所 | Plasma backflow forming method for photoresist micro-convex lens array for mask |
| CN102544346A (en) * | 2010-12-24 | 2012-07-04 | 中国电子科技集团公司第十八研究所 | Bismuth telluride thermoelectric generator |
| CN102263009A (en) * | 2011-01-19 | 2011-11-30 | 沈阳芯源微电子设备有限公司 | Visual wafer centering unit |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154824A (en) * | 2015-10-21 | 2015-12-16 | 丰盛印刷（苏州）有限公司 | Chip sputtering jig and sputtering method |
| CN105154824B (en) * | 2015-10-21 | 2018-02-16 | 丰盛印刷（苏州）有限公司 | Chip sputtering jig and method for sputtering |
| CN106054305A (en) * | 2016-08-25 | 2016-10-26 | 福建福晶科技股份有限公司 | Discharging method of true zero-order wave plate |
| CN106304826A (en) * | 2016-08-25 | 2017-01-04 | 强新正品（苏州）环保材料科技有限公司 | A kind of silica gel piece method for dismounting |
| CN113916920A (en) * | 2021-10-27 | 2022-01-11 | 长江存储科技有限责任公司 | Method for placing and picking test sample |
| CN114206030A (en) * | 2021-12-06 | 2022-03-18 | 博罗县精汇电子科技有限公司 | Production process of thin rigid-flex board |
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Application publication date: 20130522 |