CN103094471A - Nonvolatile storing device capable of reducing storage node and manufacturing method thereof - Google Patents
Nonvolatile storing device capable of reducing storage node and manufacturing method thereof Download PDFInfo
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- CN103094471A CN103094471A CN2011103346648A CN201110334664A CN103094471A CN 103094471 A CN103094471 A CN 103094471A CN 2011103346648 A CN2011103346648 A CN 2011103346648A CN 201110334664 A CN201110334664 A CN 201110334664A CN 103094471 A CN103094471 A CN 103094471A
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- hearth electrode
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Abstract
The invention provides a nonvolatile resistance memory device which comprises a top electrode, a bottom electrode and a change blocking oxide layer which is arranged between the top electrode and the bottom electrode. The nonvolatile resistance memory device is characterized in that one end of the bottom electrode is in a cone shape, the end of the bottom electrode is connected with the change blocking oxide layer, and the cone-shaped end portion is embedded into the change blocking oxide layer. The invention further provides a manufacturing method of the nonvolatile resistance memory device.
Description
Technical field
The present invention relates to a kind of non-volatile resistance memory and manufacture method thereof, more specifically, relate to a kind of Nonvolatile memory devices and manufacture method thereof of having dwindled memory node.
Background technology
Since nineteen sixties, the high speed development of computer technology, the Internet and novel popular electronic product, society presents the high speed ascendant trend to the demand of IC market product information storage now.Yet, after integrated circuit technique develops into the following technology of 32nm, the memory device of current main-stream, further develop and to face the restriction of its physics limit by Moore law rule, and the weakness of the semiconductor random asccess memory of current use is its volatibility (information dropout under powering-off state), is subject to electromagnetic interference.Therefore it is the inexorable trend that develops of memory from now on that the nonvolatile memory of seeking a kind of new memory mechanism substitutes existing volatile memory.Resistive random access memory (RRAM) (Resistance Random Access Memory, be called for short RRAM) has caused concern and the research of countries in the world scientific research institutions, colleges and universities and enterprise with its high density storage, high conversion rate (ns), long-life (tens thousand of conversions), low cost and with the many advantage such as the compatibility of traditional cmos process in recent years.The selected material of resistive random access memory (RRAM) comprises transiton metal binary oxides (TiO
2, Cu
xO, NiO, ZrO
2, ZnO etc.), giant magnetic resistance Pr
1-xCa
xMnO, doping SrTiO
3, SrZrO
3Deng and organic material and phase-change material etc.
Along with to the going deep into of the research of the inherent physical mechanism of resistance-variable storing device, the conductive filament model is accepted by increasing researcher.The conductive filament model refers under the driving of electric field, the local metallization conductive channel of the inside of the oxide in resistance-variable storing device generation, and generation and the fusing of metallization conductive channel have caused the resistance of device to change between high-impedance state and low resistance state.But because this conductive channel is random the appearance, caused the electrical properties of resistance-variable storing device unstable, IV repeatability is bad.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of non-volatile resistance memory, the formation position of the conductive channel in can the fixed storage device, thus improve the stability of memory device.
The invention provides a kind of non-volatile resistance memory, comprise top electrode, hearth electrode and the resistance change oxide layer between top electrode and hearth electrode, the end that it is characterized in that the end that hearth electrode is connected with the resistance change oxide layer extend in the resistance change oxide layer, and the end of this end is is stretching into the diminishing shape of cross-sectional area on direction, and this shape is such as thinking that taper or truncated cone-shaped etc. can produce the shape of point discharge.
According to non-volatile resistance memory provided by the invention, wherein the cone angle scope of the tapered end of hearth electrode is the 30-90 degree.
According to non-volatile resistance memory provided by the invention, wherein the material of resistance change oxide layer is selected from TiO
2, Cu
2O, NiO, ZrO
2, ZnO, giant magnetic resistance Pr
1-xCa
xMnO, doping SrTiO
3, SrZrO
3In one or more.
According to non-volatile resistance memory provided by the invention, wherein the material of hearth electrode and top electrode is selected from one or more in Pt, Ru, Ir, Pd, Au, Cr, Ni, Cu, TiN and Graphene.
The invention provides a kind of method of making non-volatile resistance memory, comprising:
1) form hearth electrode, make the end of an end of this hearth electrode be the diminishing shape of cross-sectional area;
2) form resistance change oxide layer and top electrode on the end that is the diminishing shape of cross-sectional area of described hearth electrode.
According to the manufacture method of non-volatile resistance memory provided by the invention, wherein step 1) comprising: adopt directed ion beam that the end of one end of hearth electrode is bombarded, ion beam and horizontal plane form angle.
According to the manufacture method of non-volatile resistance memory provided by the invention, wherein step 1) comprising: adopt argon ion RIE plasma etching, etching is carried out in the end of an end of hearth electrode.
According to the manufacture method of non-volatile resistance memory provided by the invention, wherein step 1) comprising: the end that utilizes an end of selective anisotropic wet etching hearth electrode.
According to the manufacture method of non-volatile resistance memory provided by the invention, wherein said hearth electrode can be column.
According to the manufacture method of non-volatile resistance memory provided by the invention, the step that wherein forms hearth electrode can comprise:
1) form through hole in dielectric layer;
2) form the column hearth electrode in through hole, and hearth electrode protrudes from a dielectric layer part;
3) the column hearth electrode is given prominence to the part taper of dielectric layer;
An end that is connected with the resistance change oxide layer due to the hearth electrode of non-volatile resistance memory provided by the present invention is for example long-pending diminishing shape of taper iso-cross-section, and this cone point is embedded among the resistance change oxide layer, therefore at drive current through out-of-date, because electronics most possible path is that cone point via hearth electrode arrives top electrode, so hearth electrode cone point position the most easily forms conductive channel, thereby fixed the formation position of conductive channel, improved the stability of resistance memory.
Description of drawings
Embodiments of the present invention is further illustrated referring to accompanying drawing, wherein:
Fig. 1 is the structural representation of non-volatile resistance memory according to an embodiment of the invention;
Fig. 2 is the schematic diagram of a formed structure of intermediate steps of the manufacture method of non-volatile resistance memory according to an embodiment of the invention;
Fig. 3 is the schematic diagram of a formed structure of intermediate steps of the manufacture method of non-volatile resistance memory according to an embodiment of the invention;
Fig. 4 is the schematic diagram of a formed structure of intermediate steps of the manufacture method of non-volatile resistance memory according to an embodiment of the invention;
Fig. 5 is the schematic diagram of a formed structure of intermediate steps of the manufacture method of non-volatile resistance memory according to an embodiment of the invention;
Fig. 6 is the schematic diagram of a formed structure of intermediate steps of the manufacture method of non-volatile resistance memory according to an embodiment of the invention;
Fig. 7 is the schematic diagram of a formed structure of intermediate steps of the manufacture method of non-volatile resistance memory according to an embodiment of the invention;
Fig. 8 is the schematic diagram of a formed structure of intermediate steps of the manufacture method of non-volatile resistance memory according to an embodiment of the invention;
Fig. 9 is the schematic diagram of final formed structure of the manufacture method of non-volatile resistance memory according to an embodiment of the invention.
Embodiment
In non-volatile resistance memory provided by the present invention, the end that hearth electrode contacts with the resistance change oxide layer tapered (also can for the diminishing shape of other cross sections, as truncated cone-shaped), and cone point is embedded among the resistance change oxide layer.When top electrode is applied forward voltage, due to the point discharge principle, electric field around the tip of cone bottom electrode is the strongest, so the oxonium ion in the most advanced and sophisticated ambient oxygen compound of the easiest evoked electrode moves, make in the oxide around most advanced and sophisticated the oxygen room pile up, cause the metallization phase transformation, produce conductive channel.That is to say that it must be that tip from hearth electrode is starting point that conductive channel forms.Thereby fixed the formation position of conductive channel, improved the stability of resistance memory.
The present embodiment provides a kind of non-volatile resistance memory, and its structure comprises as shown in Figure 1:
Switching transistor 100 comprises source electrode 101, drain electrode 103, channel region 102, gate insulator 107 and grid 106;
The silicon oxide layer 105 of covering transistor 100 and memory node 10;
In the non-volatile resistance memory that the present embodiment provides, because an end of hearth electrode is tapered, therefore at drive current through out-of-date, the most possible path of electronics is the cone point arrival top electrode via hearth electrode, so hearth electrode cone point position the most easily forms conductive channel, thereby fixed the position that conductive channel forms, improved the stability of memory device.
The non-volatile resistance memory that arbitrary embodiment provides according to the present invention, wherein the material of hearth electrode 11 and top electrode 13 is not limited to Au, can be selected from one or more in Pt, Ru, Ir, Pd, Au, Cr, Ni, Cu, TiN and Graphene.
The non-volatile resistance memory that arbitrary embodiment provides according to the present invention, wherein the preferred cone angle scope of hearth electrode 11 cone points is the 30-90 degree.
The non-volatile resistance memory that arbitrary embodiment provides according to the present invention, wherein the material of resistance change oxide layer is selected from TiO
2, Cu
2O, NiO, ZrO
2, ZnO, giant magnetic resistance Pr
1-xCa
xMnO, doping SrTiO
3, SrZrO
3In one or more.
The non-volatile resistance memory that arbitrary embodiment provides according to the present invention, wherein silicon oxide layer 105 is also replaceable is other insulating material, as silicon nitride, aluminium oxide or organic insulator etc.
The present embodiment also provides a kind of manufacture method of non-volatile resistance memory, comprising:
Form the transistor 100 that comprises source electrode 101, drain electrode 103, gate insulator 107 and grid 106 on Si substrate 104;
Form photoresist layer 202 on silicon oxide layer 105, and the mode by uv-exposure forms circular electrode hole 203 on photoresist layer 202, obtain structure as shown in Figure 3;
Be etched in silicon oxide layer 105 through hole 201 that forms corresponding to circular electrode hole 203 through RIE, through hole 201 makes transistorized drain electrode 103 expose, and obtains structure as shown in Figure 4;
Deposit Au layer 11 ' by magnetically controlled DC sputtering on photoresist layer 202, make Au filling vias 201 and circular electrode hole 203, packed height is higher than the thickness of silicon oxide layer 105, form cylindric hearth electrode 11, diameter is 100nm, is highly 400nm, thereby obtains structure as shown in Figure 5;
Soaked 1 hour in purity 99.9% acetone, with stripping photolithography glue-line 202, outstanding silicon oxide layer 105 parts of cylindric hearth electrode 11 obtain structure as shown in Figure 6;
Adopt directed Ar ion beam that hearth electrode 11 is bombarded, wherein ion beam and horizontal plane form angle α, α=45 °, can so that inclined-planes are formed on hearth electrode 11 tops, rotate simultaneously substrate, with the part taper with cylindric hearth electrode 11 outstanding silicon oxide layers 105, obtain structure as shown in Figure 7, wherein radio-frequency power is 700w, wafer rotary speed 30rpm, 50 minutes reaction time;
Form the thick TiO of 100nm on described hearth electrode 11
2Resistance change oxide layer 12 and top electrode 13 make the tapering part of hearth electrode 11 be embedded into TiO
2In resistance change oxide layer 12, obtain structure as shown in Figure 8;
Silicon oxide layer deposited 105 ', and form the bit line 108 be connected with top electrode 13 on top electrode 13 obtains structure as shown in Figure 9, and wherein hearth electrode 11, resistance change oxide layer 12 and top electrode 13 have consisted of the resistance-change memory unit.
The manufacture method of the non-volatile resistance memory that arbitrary embodiment provides according to the present invention, wherein substrate 104 can be also other Semiconductor substrate, as GaAs, InP etc.
The manufacture method of the non-volatile resistance memory that arbitrary embodiment provides according to the present invention, wherein silicon oxide layer 105 also can be substituted by other dielectric materials, as silicon nitride, aluminium oxide or organic insulator etc.
The manufacture method of the non-volatile resistance memory that arbitrary embodiment provides according to the present invention, wherein the material of hearth electrode 11 and top electrode 13 is not limited to Au, can be selected from one or more in Pt, Ru, Ir, Pd, Au, Cr, Ni, Cu, TiN and Graphene.
The manufacture method of the non-volatile resistance memory that arbitrary embodiment provides according to the present invention, wherein the angle of Ar ion beam and silicon oxide layer surface formation is preferably 15～45 degree, radio-frequency power is preferably 500-1000w, the substrate rotary speed is preferably 15～50rpm, and the reaction time is preferably 1～10 minute.
The manufacture method of the non-volatile resistance memory that arbitrary embodiment provides according to the present invention wherein can also adopt argon ion RIE plasma etching to make cylindric hearth electrode 11 expose the part taper of silicon oxide layer 105.Although the RIE plasma etching is to be tending towards isotropic, but in actual process, at first top section touches reactive ion, so etching speed is always fast than the bottom, within a certain period of time, can make hearth electrode 11 tops formation tapers, the etching speed of the diameter of hearth electrode 11 and RIE plasma etching etc. has determined the size of cone angle, and during argon ion RIE plasma etching, pressure is preferably 0.5～2Torr, radio-frequency power is preferably 500～1000w, and the reaction time is preferably 1～10 minute.
The manufacture method of the non-volatile resistance memory that arbitrary embodiment provides according to the present invention wherein can also utilize selective anisotropic wet etching method to make cylindric hearth electrode 11 expose the part taper of silicon oxide layer 105, for example can utilize KI+I+H
2The solution of O carries out etching, KI to Au hearth electrode 11: I: H
2The ratio of O can be for example 1.66: 0.44: 60.
The non-volatile resistance memory that arbitrary embodiment provides according to the present invention, wherein the end that contacts with the resistance change oxide layer of hearth electrode also can for the diminishing shape of other cross sections, as truncated cone-shaped, but be preferably taper except taper.
Although specifically illustrate and described the present invention with reference to exemplary embodiments of the present invention, those skilled in the art is to be understood that and carries out the change on various forms and details under the prerequisite of the spirit and scope of the present invention that define in not departing from claim.
Claims (10)
1. non-volatile resistance memory, comprise top electrode (13), hearth electrode (11) and the resistance change oxide layer (12) between top electrode and hearth electrode, the end that it is characterized in that the end that hearth electrode is connected with the resistance change oxide layer extend in the resistance change oxide layer, and the end of this end is and is stretching into the diminishing shape of cross-sectional area on direction.
2. non-volatile resistance memory according to claim 1, the end that wherein said hearth electrode extend in the resistance change oxide layer is taper or truncated cone-shaped.
3. non-volatile resistance memory according to claim 2, wherein the cone angle scope of the tapered end of hearth electrode is the 30-90 degree.
4. non-volatile resistance memory according to claim 1, wherein the material of resistance change oxide layer is selected from TiO
2, Cu
2O, NiO, ZrO
2, ZnO, giant magnetic resistance Pr
1-xCa
xMnO, doping SrTiO
3, SrZrO
3In one or more.
5. non-volatile resistance memory according to claim 1, wherein the material of hearth electrode and top electrode is selected from one or more in Pt, Ru, Ir, Pd, Au, Cr, Ni, Cu, TiN and Graphene.
6. method of making non-volatile resistance memory as claimed in claim 1 comprises:
1) form hearth electrode, make the end of an end of this hearth electrode be the diminishing shape of cross-sectional area;
2) form resistance change oxide layer and top electrode on the end that is the diminishing shape of cross-sectional area of described hearth electrode.
7. the manufacture method of non-volatile resistance memory according to claim 6, wherein step 1) comprising: adopt directed ion beam that the end of one end of hearth electrode is bombarded, ion beam and horizontal plane formation angle.
8. the manufacture method of non-volatile resistance memory according to claim 6, wherein step 1) comprising: adopt argon ion RIE plasma etching, etching is carried out in the end of an end of hearth electrode.
9. the manufacture method of non-volatile resistance memory according to claim 6, wherein step 1) comprising: the end that utilizes an end of selective anisotropic wet etching hearth electrode.
10. the manufacture method of the described non-volatile resistance memory of arbitrary claim according to claim 6 to 9, wherein said hearth electrode is column.
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| CN103515534A (en) * | 2013-10-10 | 2014-01-15 | 北京大学 | Resistive random access memory with high uniformity and manufacturing method thereof |
| CN104409627A (en) * | 2014-10-30 | 2015-03-11 | 北京大学 | Small-size ultrathin resistive random access memory and preparation method thereof |
| CN104576926A (en) * | 2013-10-25 | 2015-04-29 | 华邦电子股份有限公司 | Resistive random access memory and manufacturing method thereof |
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Application publication date: 20130508 |