CN102738386A - Resistive random access memory and manufacturing method thereof - Google Patents
Resistive random access memory and manufacturing method thereof Download PDFInfo
- Publication number
- CN102738386A CN102738386A CN2011100812091A CN201110081209A CN102738386A CN 102738386 A CN102738386 A CN 102738386A CN 2011100812091 A CN2011100812091 A CN 2011100812091A CN 201110081209 A CN201110081209 A CN 201110081209A CN 102738386 A CN102738386 A CN 102738386A
- Authority
- CN
- China
- Prior art keywords
- control electrode
- local control
- electrode
- storage medium
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000003860 storage Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 25
- 239000007772 electrode material Substances 0.000 claims description 11
- 238000013459 approach Methods 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 13
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 10
- 239000008151 electrolyte solution Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005566 electron beam evaporation Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 150000002736 metal compounds Chemical class 0.000 description 4
- 238000004549 pulsed laser deposition Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- -1 chalcogenide compound Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 239000002001 electrolyte material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Landscapes
- Semiconductor Memories (AREA)
Abstract
A resistive random access memory and a method of manufacturing the same, the memory comprising: a lower electrode; a local control electrode over the lower electrode; a storage medium layer on the lower electrode and the local control electrode; an upper electrode over the storage dielectric layer. The local control electrode on the lower electrode enhances the local electric field intensity in the storage medium, so that the conductive filament is easier to form along the control electrode, the formation and disconnection of the conductive filament are effectively controlled, the problem of discrete programming voltage caused by the random formation of the conductive filament is solved, the programming voltage of the device is centralized, and the working stability of the device is improved.
Description
Technical field
The present invention relates to semiconductor device and manufacturing technology, more particularly, relate to a kind of resistance-variable storing device and manufacturing approach thereof.
Background technology
Popular along with the Portable personal device, non-volatility memorizer owing to have still can be kept remember condition and operate advantage such as low-power consumption when non-transformer supply, become the research and development emphasis in the semi-conductor industry gradually.Non-volatility memorizer in the market is a main flow with flash memory (flash) still; But operating voltage is excessive because flash memory exists, service speed is slow, endurance is good inadequately and owing to shortcomings such as the continuous attenuate of tunnel oxide causes that the retention time falls short of in the device dimensions shrink process, present research and development emphasis has turned to the novel non-volatility memorizer that can replace flash memory gradually.
Resistance-variable storing device (RRAM) since have write operation voltage low, write the erasing time short, the retention time long, non-destructive reads, many-valued storage, simple in structure and storage density advantages of higher, therefore becomes the research emphasis in the present novel non-volatility memorizer spare gradually.The storage principle of resistance-variable storing device is that the reversible resistance that is based upon resistance change material becomes on the characteristic, that is to say that resistance becomes material can realize reversible transformation under the signal of telecommunication between high-impedance state and low resistance state.
At present, also have certain dispute to the transformation mechanism of electric resistance changing memory, but the demonstration widely of some mechanism processes has been arranged, solid-state electrolytic solution electric resistance changing memory is exactly wherein a kind of.The basic structure of solid-state electrolytic solution resistance change memory device; As shown in Figure 1; Mainly comprise: bottom electrode 11, storage medium layer 12 and top electrode 13; Bottom electrode adopts electric field action to be the metal of inertia down, and top electrode adopts the metal of easy oxidation under the electric field action, and storage medium is the solid-state electrolytic solution material.
The operation principle of this solid-state electrolytic solution resistance change memory is: top electrode is oxidized to metal ion under electric field action; And move to bottom electrode and be reduced into atom along electric field; These atom packings form conductive filament; When these filaments arrive top electrode, upper/lower electrode is linked to each other, memory is in low resistive state; Under the reversed electric field effect, this conductive filament breaks off, and memory is returned to high-impedance state.This two states can be used for respectively characterizing ' 0 ' and ' 1 ', and this two states can be changed under the effect of extra electric field each other.
At present, mainly be chalcogenide compound for electrolyte material, for example CuS, AgS and AgGeS etc. in addition, also have some binary oxides, for example ZrO
2, HfO
2, ZnO, TaO
x, SiO
2, WO
xDeng, also have the similarity of solid-state electrolytic solution, and have low cost of manufacture, technology simple and and the advantage of CMOS process compatible, propose binary oxide as the solid-state electrolytic solution material.But problem is, in these materials; With reference to figure 2, the process that conductive filament forms is a process at random, can form many conductive filaments at random; And the time point that arrives top electrode is also different, and in repeating transfer process, conductive filament is difficult to form along identical path and break off; Can cause the program voltage of device to have very big discreteness like this, influence the stability of device work.
Summary of the invention
The embodiment of the invention provides a kind of resistance-variable storing device and manufacturing approach thereof, has solved the problem that conductive filament forms at random, makes the program voltage of device have centrality, has improved the stability of device work.
For realizing above-mentioned purpose, the embodiment of the invention provides following technical scheme:
A kind of resistance-variable storing device comprises:
The embodiment of the invention also discloses a kind of manufacturing approach of resistance-variable storing device, comprising:
Bottom electrode;
Local control electrode on the bottom electrode;
Storage medium layer on bottom electrode and the local control electrode;
Top electrode on the storage medium layer.
Alternatively, said local control electrode is taper shape, cylindricality or aciculiform.
Alternatively, the thickness range of said local control electrode is the 1-100 nanometer.
Alternatively, the scope of the base diameter of said local control electrode is the 5-20 nanometer.
Alternatively, said local control electrode comprises Ti, W, Cu, Ni or Ru.
In addition, the present invention also provides the manufacturing approach of above-mentioned resistance-variable storing device, and said method comprises:
Substrate is provided;
On said substrate, form bottom electrode;
On said bottom electrode, form local control electrode;
On said bottom electrode and local control electrode, form storage medium layer;
On said storage medium layer, form top electrode.
Alternatively, the step that forms local control electrode comprises:
On bottom electrode, form the control electrode material layer;
On the control electrode material layer, form the mask pattern layer;
Wet etching control electrode material layer is to form local control electrode;
Remove the mask pattern layer.
Alternatively, the thickness range of said local control electrode is the 1-100 nanometer.
Alternatively, said local control electrode is taper shape, cylindricality or aciculiform.
Alternatively, the scope of the base diameter of said local control electrode is the 5-20 nanometer.
Alternatively, said local control electrode comprises Ti, W, Cu, Ni or Ru.
Compared with prior art, technique scheme has the following advantages:
Resistance-variable storing device of the present invention unit and manufacturing approach thereof; On the bottom electrode of resistance-variable storing device, be formed with local control electrode; This part control electrode has strengthened the local electric field intensity in the storage medium layer, because the local electric field intensity in this control electrode zone is higher than other zones, conductive filament is formed more easily along this control electrode; Effectively like this controlled that conductive filament forms and broken off; Thereby solved owing to conductive filament forms the discrete problem of program voltage that causes at random, made the program voltage of device have centrality, improved the stability of device work.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose, characteristic and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by actual size equal proportion convergent-divergent.
Fig. 1 is the basic structure sketch map of resistance-variable storing device device;
Fig. 2 is the sketch map that traditional resistance-variable storing device conductive filament forms;
Fig. 3 is the structural representation according to the resistance-variable storing device of the embodiment of the invention;
Fig. 4 is the sketch map according to the resistance-variable storing device conductive filament formation of the embodiment of the invention;
Fig. 5-11 is the sketch map according to each fabrication stage of the resistance-variable storing device of the embodiment of the invention.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
A lot of details have been set forth in the following description so that make much of the present invention; But the present invention can also adopt other to be different from alternate manner described here and implement; Those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed specific embodiment.
Secondly, the present invention combines sketch map to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The profile of expression device architecture can be disobeyed general ratio and done local the amplification, and said sketch map is example, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Said as the background technology part; Traditional solid electrolyte resistance-variable storing device forms quantity at conductive filament and has very big randomness on the path with forming, and can cause the program voltage of each operational store to have discreteness like this, influences the stability of device work; For this reason; The invention provides a kind of resistance-variable storing device,, strengthen the local electric field intensity in the storage medium through the local control electrode on the bottom electrode; Control conductive filament formation and break off the problem that the program voltage that solution causes owing to conductive filament forms at random is discrete.
With reference to figure 3, said memory comprises:
In the embodiment of the invention, bottom electrode 102 can be formed on the substrate 100, and substrate 100 can be the Si substrate, is formed with SiO on the Si substrate
2Insulating barrier, SiO
2The thickness of insulating barrier can be 100nm.In other embodiments, said substrate can also include but not limited to other semiconductors or compound semiconductor, like carborundum, GaAs, indium arsenide or indium phosphide.According to the known designing requirement of prior art (for example p type substrate or n type substrate), substrate 100 can comprise various doping configurations.In addition, can also comprise other devices in the substrate.
Wherein, Said bottom electrode 102 can be for comprising the single or multiple lift structure of inert metal, inert metal compound or other suitable metal materials; Said inert metal example comprises W, Al, Cu, Au, Ag, Pt, Ru, Ti, Ta; The example of said inert metal compound comprises TiN, TaN, ITO, IZO, and thickness can be about 1-500nm.In one embodiment of the invention, said bottom electrode 102 comprises the double-layer structure of Ti, Pt, and the thickness of wherein said Ti layer can be 20nm, and the thickness of said Pt layer can be 80nm, and the Ti layer is Pt layer and SiO
2The adhesion layer of insulating barrier.
Wherein, said local control electrode 110 can comprise any metal material, for example; Ti, W, Cu, Ni, Ru etc.; Said local control electrode can be conical, cylindrical, aciculiform or other suitable shapes, and thickness can be 1-100nm, and base diameter can be 5-20nm.In one embodiment of the invention, said local control electrode 110 is conical, comprises metal Ti, and thickness is 20nm, and base diameter is 20nm.
Wherein, said storage medium layer 112 can comprise the solid-state electrolytic solution material, for example sulfide and binary oxide, for example CuS, AgS, AgGeSe, CuI
xS
y, ZrO
2, HfO
2, TiO
2, SiO
2, WO
x, NiO, CuO
x, ZnO, TaO
x, Y
2O
3Deng, can also be the above-mentioned material that carries out behind the doping vario-property, thickness can be about 10-500nm.In one embodiment of the invention, said storage medium layer 112 is ZrO
2, thickness is 50nm.
Wherein, said top electrode 114 can comprise the easy oxidation metal material, for example Cu, Ag etc., and thickness can be about 10-500nm.In one embodiment of the invention, the said very Cu that powers on, thickness is 50nm.
Strengthened the local electric field intensity in the storage medium layer through this part control electrode; Thereby conductive filament can be formed and fracture along this nano-electrode; Because the local electric field intensity in this control electrode zone is higher than other zones, conductive filament is formed more easily, along this control electrode with reference to figure 4; Reach the formation of effective control conductive filament; Solve the discrete problem of program voltage that the randomness of conductive filament causes, made the program voltage of device have centrality, improved the stability of device work.
More than resistance-variable storing device of the present invention and embodiment have been carried out detailed description, in addition, the present invention also provides the manufacturing approach of above-mentioned resistance-variable storing device, said method comprises:
Substrate is provided;
On said substrate, form bottom electrode;
On said bottom electrode, form local control electrode;
On said bottom electrode and local control electrode, form storage medium layer;
On said storage medium layer, form top electrode.
The diagram that below will combine each fabrication stage is carried out detailed explanation to the manufacturing approach of above-mentioned resistance-variable storing device embodiment.
With reference to figure 5, substrate 100 is provided.
In embodiments of the present invention, substrate 100 can comprise the Si substrate, also is formed with the SiO2 insulating barrier on the Si substrate, and the thickness of SiO2 insulating barrier can be 100nm.In other embodiments, said substrate can also include but not limited to other semiconductors or compound semiconductor, like carborundum, GaAs, indium arsenide or indium phosphide.According to the known designing requirement of prior art (for example p type substrate or n type substrate), substrate 100 can comprise various doping configurations.In addition, can also comprise other devices in the substrate.
With reference to figure 5, on substrate 100, form bottom electrode 102.
Can utilize electron beam evaporation process, on said substrate 100, form Ti layer and Pt layer successively as bottom electrode 102, the thickness of said Ti layer can be 20nm, and the thickness of said Pt layer can be 80nm, and the Ti layer is the adhesion layer of Pt layer and SiO2 insulating barrier.In other embodiments; Said bottom electrode can also be for comprising the single or multiple lift structure of inert metal, inert metal compound or other suitable metal materials; Said inert metal example comprises W, Al, Cu, Au, Ag, Pt, Ru, Ti, Ta; The example of said inert metal compound comprises TiN, TaN, ITO, IZO; Thickness can be about 1-500nm, can adopt electron beam evaporation, chemical vapour deposition (CVD), pulsed laser deposition, ald, magnetron sputtering or other suitable methods to form.
With reference to figure 6, on bottom electrode 102, form control electrode material layer 104.
Can adopt the method for sputter, deposit Ti is a control electrode material layer 104 on said bottom electrode 102, and its thickness can be 20nm.In other embodiments; Said control electrode material layer can also comprise other any metal materials; For example; Ti, W, Cu, Ni, Ru etc., thickness can be 1-100nm, can adopt electron beam evaporation, chemical vapour deposition (CVD), pulsed laser deposition, ald, magnetron sputtering or other suitable methods to form.
With reference to figure 7 and Fig. 8, on said control electrode material layer 104, form mask pattern layer 108.
Can on control electrode material layer 104, form mask layer 106 by the spin coating photoresist, as shown in Figure 7, then, the exposure back forms mask pattern layer 108, and as shown in Figure 8, said mask pattern layer 108 can be circular pattern or other suitable patterns, and diameter is 20nm.In other embodiments, the diameter of mask pattern layer can also be other suitable dimensions, can be 5-20nm.
With reference to figure 9, form local control electrode 110.
With mask pattern layer 108 is mask, can adopt the method for wet etching, and the corrosion solvent can be HNO
3/ H
2O
2The mixed solution of/HF through the control etching time, forms the local control electrode 108 of cone shape; Base diameter is approximately 20nm; Can also pass through other suitable methods, form the local control electrode of cylindrical, aciculiform or other shapes, then remove mask pattern layer 108.
With reference to Figure 10, on said bottom electrode 102 and local control electrode 110, form storage medium layer 112.
Can utilize electron beam evaporation process, ZrO grows on said bottom electrode 102 and local control electrode 110
2Be storage medium layer 112, said storage medium layer 112 covers bottom electrode 102 and control electrode 110 fully, and its thickness can be 50nm.In other embodiments, storage medium layer 112 can also be the solid-state electrolytic solution material, for example sulfide and binary oxide, for example CuS, AgS, AgGeSe, CuIxSy, ZrO
2, HfO2, TiO
2, SiO
2, WO
x, NiO, CuO
x, ZnO, TaO
x, Y
2O
3Deng, thickness can be about 10-500nm, can also be the above-mentioned material that carries out behind the doping vario-property; Can pass through electron beam evaporation, pulsed laser deposition, magnetron sputtering or sol-gel process or other suitable methods and form above-mentioned material; Then, further, can also carry out doping vario-property.
With reference to Figure 11, on storage medium layer 112, form top electrode 114.
Can utilize electroplating technology, be top electrode 114 at said top electrode 114 deposition Cu, and thickness can be 50nm, thereby forms memory device.In other embodiments; Said top electrode can also comprise other easy oxidation metal materials; For example Cu, Ag etc., thickness range is about 5-500nm, can adopt electron beam evaporation, chemical vapour deposition (CVD), pulsed laser deposition, ald, magnetron sputtering or other suitable methods to form.
More than the manufacturing approach of the embodiment of the invention has been carried out detailed description; Strengthen the local electric field intensity in the storage medium layer through forming local control electrode; Thereby conductive filament can be formed and fracture along this nano-electrode,, conductive filament is formed more easily along this control electrode because the local electric field intensity in this control electrode zone is higher than other zones; Reach the formation of effective control conductive filament; Solve the discrete problem of program voltage that the randomness of conductive filament causes, made the program voltage of device have centrality, improved the stability of device work.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the method for above-mentioned announcement capable of using and technology contents are made many possible changes and modification to technical scheme of the present invention, or are revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (11)
1. a resistance-variable storing device is characterized in that, said memory comprises:
Bottom electrode;
Local control electrode on the bottom electrode;
Storage medium layer on bottom electrode and the local control electrode;
Top electrode on the storage medium layer.
2. memory according to claim 1 is characterized in that, said local control electrode is taper shape, cylindricality or aciculiform.
3. memory according to claim 1 is characterized in that, the thickness range of said local control electrode is the 1-100 nanometer.
4. memory according to claim 2 is characterized in that, the scope of the base diameter of said local control electrode is the 5-20 nanometer.
5. memory according to claim 1 is characterized in that, said local control electrode comprises Ti, W, Cu, Ni or Ru.
6. the manufacturing approach of a resistance-variable storing device is characterized in that, said method comprises:
Substrate is provided;
On said substrate, form bottom electrode;
On said bottom electrode, form local control electrode;
On said bottom electrode and local control electrode, form storage medium layer;
On said storage medium layer, form top electrode.
7. method according to claim 6 is characterized in that, the step that forms local control electrode comprises:
On bottom electrode, form the control electrode material layer;
On the control electrode material layer, form the mask pattern layer;
Wet etching control electrode material layer is to form local control electrode;
Remove the mask pattern layer.
8. method according to claim 6 is characterized in that, the thickness range of said local control electrode is the 1-100 nanometer.
9. according to claim 6 or 7 described methods, it is characterized in that said local control electrode is taper shape, cylindricality or aciculiform.
10. method according to claim 9 is characterized in that, the scope of the base diameter of said local control electrode is the 5-20 nanometer.
11., it is characterized in that said local control electrode comprises Ti, W, Cu, Ni or Ru according to claim 6 or 7 described methods.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100812091A CN102738386A (en) | 2011-03-31 | 2011-03-31 | Resistive random access memory and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100812091A CN102738386A (en) | 2011-03-31 | 2011-03-31 | Resistive random access memory and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102738386A true CN102738386A (en) | 2012-10-17 |
Family
ID=46993503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100812091A Pending CN102738386A (en) | 2011-03-31 | 2011-03-31 | Resistive random access memory and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102738386A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035840A (en) * | 2012-12-19 | 2013-04-10 | 北京大学 | Resistive random access memory and preparation method thereof |
| CN105027309A (en) * | 2013-03-13 | 2015-11-04 | 密克罗奇普技术公司 | Sidewall-type memory cell |
| CN106299106A (en) * | 2015-05-25 | 2017-01-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | Promote method and the application thereof of resistance-variable storing device stability |
| CN107068857A (en) * | 2017-04-20 | 2017-08-18 | 中国科学院微电子研究所 | Nanowire construction method and data storage method |
| US9865814B2 (en) | 2014-02-19 | 2018-01-09 | Microchip Technology Incorporated | Resistive memory cell having a single bottom electrode and two top electrodes |
| US9865813B2 (en) | 2014-02-19 | 2018-01-09 | Microchip Technology Incorporated | Method for forming resistive memory cell having a spacer region under an electrolyte region and a top electrode |
| US9917251B2 (en) | 2014-02-19 | 2018-03-13 | Microchip Technology Incorporated | Resistive memory cell having a reduced conductive path area |
| US10003021B2 (en) | 2014-02-19 | 2018-06-19 | Microchip Technology Incorporated | Resistive memory cell with sloped bottom electrode |
| CN111293221A (en) * | 2020-04-08 | 2020-06-16 | 电子科技大学 | Preparation method of high-performance memristor |
| WO2022105476A1 (en) * | 2020-11-19 | 2022-05-27 | International Business Machines Corporation | Resistive switching memory cell |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060006471A1 (en) * | 2004-07-09 | 2006-01-12 | International Business Machines Corporation | Resistor with improved switchable resistance and non-volatile memory device |
| US20070012956A1 (en) * | 2005-07-14 | 2007-01-18 | Gutsche Martin U | Phase change memory cell having nanowire electrode |
| CN1953230A (en) * | 2005-10-21 | 2007-04-25 | 三星电子株式会社 | Nonvolatile memory device comprising nanodot and manufacturing method for the same |
| US20100108972A1 (en) * | 2008-11-04 | 2010-05-06 | Samsung Electronics Co., Ltd. | Non-volatile semiconductor memory devices |
| CN101872836A (en) * | 2009-04-22 | 2010-10-27 | 中国科学院微电子研究所 | Resistive nonvolatile memory device and manufacturing method thereof |
| CN102623631A (en) * | 2011-01-27 | 2012-08-01 | 中国科学院微电子研究所 | Resistive random access memory unit, memory and preparation method |
-
2011
- 2011-03-31 CN CN2011100812091A patent/CN102738386A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060006471A1 (en) * | 2004-07-09 | 2006-01-12 | International Business Machines Corporation | Resistor with improved switchable resistance and non-volatile memory device |
| US20070012956A1 (en) * | 2005-07-14 | 2007-01-18 | Gutsche Martin U | Phase change memory cell having nanowire electrode |
| CN1953230A (en) * | 2005-10-21 | 2007-04-25 | 三星电子株式会社 | Nonvolatile memory device comprising nanodot and manufacturing method for the same |
| US20100108972A1 (en) * | 2008-11-04 | 2010-05-06 | Samsung Electronics Co., Ltd. | Non-volatile semiconductor memory devices |
| CN101872836A (en) * | 2009-04-22 | 2010-10-27 | 中国科学院微电子研究所 | Resistive nonvolatile memory device and manufacturing method thereof |
| CN102623631A (en) * | 2011-01-27 | 2012-08-01 | 中国科学院微电子研究所 | Resistive random access memory unit, memory and preparation method |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9281476B2 (en) | 2012-12-19 | 2016-03-08 | Peking University | Resistive memory and method for fabricating the same |
| CN103035840A (en) * | 2012-12-19 | 2013-04-10 | 北京大学 | Resistive random access memory and preparation method thereof |
| CN105027309B (en) * | 2013-03-13 | 2018-03-02 | 密克罗奇普技术公司 | Lateral wall type memory cell |
| CN105027309A (en) * | 2013-03-13 | 2015-11-04 | 密克罗奇普技术公司 | Sidewall-type memory cell |
| US10056545B2 (en) | 2013-03-13 | 2018-08-21 | Microchip Technology Incorporated | Sidewall-type memory cell |
| US10003021B2 (en) | 2014-02-19 | 2018-06-19 | Microchip Technology Incorporated | Resistive memory cell with sloped bottom electrode |
| US9865813B2 (en) | 2014-02-19 | 2018-01-09 | Microchip Technology Incorporated | Method for forming resistive memory cell having a spacer region under an electrolyte region and a top electrode |
| US9865814B2 (en) | 2014-02-19 | 2018-01-09 | Microchip Technology Incorporated | Resistive memory cell having a single bottom electrode and two top electrodes |
| US9917251B2 (en) | 2014-02-19 | 2018-03-13 | Microchip Technology Incorporated | Resistive memory cell having a reduced conductive path area |
| CN106299106A (en) * | 2015-05-25 | 2017-01-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | Promote method and the application thereof of resistance-variable storing device stability |
| CN107068857A (en) * | 2017-04-20 | 2017-08-18 | 中国科学院微电子研究所 | Nanowire construction method and data storage method |
| CN111293221A (en) * | 2020-04-08 | 2020-06-16 | 电子科技大学 | Preparation method of high-performance memristor |
| WO2022105476A1 (en) * | 2020-11-19 | 2022-05-27 | International Business Machines Corporation | Resistive switching memory cell |
| US11502252B2 (en) | 2020-11-19 | 2022-11-15 | International Business Machines Corporation | Resistive switching memory cell |
| GB2616757A (en) * | 2020-11-19 | 2023-09-20 | Ibm | Resistive switching memory cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102738386A (en) | Resistive random access memory and manufacturing method thereof | |
| US9559299B1 (en) | Scaling of filament based RRAM | |
| US10153431B2 (en) | Resistive memory having confined filament formation | |
| CN105990519A (en) | Non-volatile resistive random access memory device and preparation method thereof | |
| CN100563041C (en) | A kind of device unit construction of Memister and manufacture method | |
| CN109659433B (en) | Memristor with adjustable volatile resistance and nonvolatile resistance conversion behaviors and preparation method thereof | |
| CN101587937A (en) | Binary metal oxide resistive random access memory and manufacturing method thereof | |
| CN105990520A (en) | Non-volatile resistive random access memory device and preparation method thereof | |
| CN101577308A (en) | Doped ZrO 2Resistive random access memory and manufacturing method thereof | |
| CN102623631A (en) | Resistive random access memory unit, memory and preparation method | |
| CN109494301A (en) | A kind of method and its resistance-variable storing device improving resistance-variable storing device stability | |
| CN102708919B (en) | Resistive random access memory and manufacturing method thereof | |
| CN102074270A (en) | Multi-value storage method of one-time programming memory | |
| CN103311433A (en) | Manufacturing method of resistive random access memory | |
| CN109411600A (en) | A kind of method and its resistance-variable storing device reducing resistance-variable storing device operation voltage | |
| CN103633243B (en) | Preparation method of resistive memory | |
| CN109920911A (en) | The preparation method of resistance-variable storing device | |
| CN103035838A (en) | Resistive random access memory component and preparation method thereof | |
| CN106887519A (en) | Preparation method of resistive random access memory for realizing multi-value storage | |
| CN115148901A (en) | Resistance switching memory with constrained filars and method therefor | |
| CN103227284A (en) | High-consistency high-speed resistive random access memory (RRAM) and producing method thereof | |
| CN102694118A (en) | Resistive random access memory and manufacturing method thereof | |
| JP5939482B2 (en) | Resistance change type memory device and manufacturing method thereof | |
| CN101431144A (en) | Method for manufacturing self-isolation resistance transition type memory | |
| US10297748B2 (en) | Three-terminal atomic switching device and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121017 |