CN103094116A - 制作沟槽mos的工艺方法 - Google Patents
制作沟槽mos的工艺方法 Download PDFInfo
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- CN103094116A CN103094116A CN2011103401452A CN201110340145A CN103094116A CN 103094116 A CN103094116 A CN 103094116A CN 2011103401452 A CN2011103401452 A CN 2011103401452A CN 201110340145 A CN201110340145 A CN 201110340145A CN 103094116 A CN103094116 A CN 103094116A
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- silicon dioxide
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- epitaxial loayer
- epitaxial layer
- mos
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CN2011103401452A CN103094116A (zh) | 2011-11-01 | 2011-11-01 | 制作沟槽mos的工艺方法 |
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CN2011103401452A CN103094116A (zh) | 2011-11-01 | 2011-11-01 | 制作沟槽mos的工艺方法 |
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CN103094116A true CN103094116A (zh) | 2013-05-08 |
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CN2011103401452A Pending CN103094116A (zh) | 2011-11-01 | 2011-11-01 | 制作沟槽mos的工艺方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105225959A (zh) * | 2014-07-01 | 2016-01-06 | 北大方正集团有限公司 | 沟槽型功率器件的制造方法和沟槽型功率器件 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010022379A1 (en) * | 2000-03-14 | 2001-09-20 | Intersil Corporation | Power trench transistor device source region formation using silicon spacer |
US6373098B1 (en) * | 1999-05-25 | 2002-04-16 | Fairchild Semiconductor Corporation | Trench-gated device having trench walls formed by selective epitaxial growth and process for forming device |
JP2003209252A (ja) * | 2002-01-17 | 2003-07-25 | Oki Electric Ind Co Ltd | 高耐圧縦型mosトランジスタとその製造方法 |
CN101512777A (zh) * | 2006-08-31 | 2009-08-19 | 飞兆半导体公司 | 具有SiGe/Si沟道结构的功率沟槽MOSFET |
CN102027583A (zh) * | 2008-04-14 | 2011-04-20 | 半南实验室公司 | 使用选择性外延生长制造横向结型场效应晶体管的方法 |
CN102097354A (zh) * | 2009-12-15 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | 功率器件耐压区的形成方法 |
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2011
- 2011-11-01 CN CN2011103401452A patent/CN103094116A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6373098B1 (en) * | 1999-05-25 | 2002-04-16 | Fairchild Semiconductor Corporation | Trench-gated device having trench walls formed by selective epitaxial growth and process for forming device |
US20010022379A1 (en) * | 2000-03-14 | 2001-09-20 | Intersil Corporation | Power trench transistor device source region formation using silicon spacer |
JP2003209252A (ja) * | 2002-01-17 | 2003-07-25 | Oki Electric Ind Co Ltd | 高耐圧縦型mosトランジスタとその製造方法 |
CN101512777A (zh) * | 2006-08-31 | 2009-08-19 | 飞兆半导体公司 | 具有SiGe/Si沟道结构的功率沟槽MOSFET |
CN102027583A (zh) * | 2008-04-14 | 2011-04-20 | 半南实验室公司 | 使用选择性外延生长制造横向结型场效应晶体管的方法 |
CN102097354A (zh) * | 2009-12-15 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | 功率器件耐压区的形成方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105225959A (zh) * | 2014-07-01 | 2016-01-06 | 北大方正集团有限公司 | 沟槽型功率器件的制造方法和沟槽型功率器件 |
CN105225959B (zh) * | 2014-07-01 | 2019-06-11 | 北大方正集团有限公司 | 沟槽型功率器件的制造方法和沟槽型功率器件 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140107 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140107 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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Application publication date: 20130508 |