CN103094074B - 用选择性外延制作底部厚栅氧化层沟槽mos的工艺方法 - Google Patents
用选择性外延制作底部厚栅氧化层沟槽mos的工艺方法 Download PDFInfo
- Publication number
- CN103094074B CN103094074B CN201110340143.3A CN201110340143A CN103094074B CN 103094074 B CN103094074 B CN 103094074B CN 201110340143 A CN201110340143 A CN 201110340143A CN 103094074 B CN103094074 B CN 103094074B
- Authority
- CN
- China
- Prior art keywords
- epitaxial loayer
- light dope
- oxide layer
- bottom thick
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110340143.3A CN103094074B (zh) | 2011-11-01 | 2011-11-01 | 用选择性外延制作底部厚栅氧化层沟槽mos的工艺方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110340143.3A CN103094074B (zh) | 2011-11-01 | 2011-11-01 | 用选择性外延制作底部厚栅氧化层沟槽mos的工艺方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103094074A CN103094074A (zh) | 2013-05-08 |
CN103094074B true CN103094074B (zh) | 2015-04-08 |
Family
ID=48206505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110340143.3A Active CN103094074B (zh) | 2011-11-01 | 2011-11-01 | 用选择性外延制作底部厚栅氧化层沟槽mos的工艺方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103094074B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105448651B (zh) * | 2014-08-15 | 2019-03-29 | 北大方正集团有限公司 | 一种衬底上的外延片及其制作方法 |
CN105789053A (zh) * | 2016-03-16 | 2016-07-20 | 上海华虹宏力半导体制造有限公司 | 沟槽栅功率晶体管的制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101512777A (zh) * | 2006-08-31 | 2009-08-19 | 飞兆半导体公司 | 具有SiGe/Si沟道结构的功率沟槽MOSFET |
CN102027583A (zh) * | 2008-04-14 | 2011-04-20 | 半南实验室公司 | 使用选择性外延生长制造横向结型场效应晶体管的方法 |
CN102097354A (zh) * | 2009-12-15 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | 功率器件耐压区的形成方法 |
-
2011
- 2011-11-01 CN CN201110340143.3A patent/CN103094074B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101512777A (zh) * | 2006-08-31 | 2009-08-19 | 飞兆半导体公司 | 具有SiGe/Si沟道结构的功率沟槽MOSFET |
CN102027583A (zh) * | 2008-04-14 | 2011-04-20 | 半南实验室公司 | 使用选择性外延生长制造横向结型场效应晶体管的方法 |
CN102097354A (zh) * | 2009-12-15 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | 功率器件耐压区的形成方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103094074A (zh) | 2013-05-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10008586B2 (en) | Dual fill silicon-on-nothing field effect transistor | |
CN108231589B (zh) | 纳米线半导体器件中内间隔的形成 | |
CN104576395A (zh) | 具有用于源极和漏极的支撑结构的纳米线mosfet | |
JP2008514016A5 (zh) | ||
CN104517847B (zh) | 无结晶体管及其形成方法 | |
EP3016143B1 (en) | A method for forming a transistor structure comprising a fin-shaped channel structure | |
CN103258738B (zh) | 超晶格纳米线场效应晶体管及其形成方法 | |
CN108649072A (zh) | 一种低导通电阻的沟槽mosfet器件及其制造方法 | |
CN103855009A (zh) | 鳍结构制造方法 | |
US8980702B2 (en) | Method of making a transistor | |
CN103000534B (zh) | 沟槽式p型金属氧化物半导体功率晶体管制造方法 | |
CN103094074B (zh) | 用选择性外延制作底部厚栅氧化层沟槽mos的工艺方法 | |
CN103579003B (zh) | 一种制作超结mosfet的方法 | |
CN103854981A (zh) | 鳍结构制造方法 | |
CN103094118B (zh) | 制作双层栅沟槽mos的工艺方法 | |
CN103094115B (zh) | 制作双层栅沟槽mos的工艺方法 | |
CN104392917B (zh) | 一种全包围栅结构的形成方法 | |
CN106158859B (zh) | 一种半导体器件及其制造方法 | |
CN103094117B (zh) | 制作底部厚栅氧化层沟槽mos的工艺方法 | |
CN103632978B (zh) | 半导体结构的形成方法 | |
CN206134689U (zh) | 高集成度的低压沟槽栅dmos器件 | |
CN107887447A (zh) | 一种mos型器件及其制造方法 | |
CN101226881B (zh) | 制备凹陷源漏场效应晶体管的方法 | |
CN103094116A (zh) | 制作沟槽mos的工艺方法 | |
CN106252228B (zh) | 一种复合鳍的形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |