CN103066009A - 穿透硅的通孔填充钨塞的工艺方法 - Google Patents
穿透硅的通孔填充钨塞的工艺方法 Download PDFInfo
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103956333A (zh) * | 2014-05-07 | 2014-07-30 | 华进半导体封装先导技术研发中心有限公司 | 基于中通孔制作方法的tsv、m1、ct金属层一次成型方法 |
CN104465492A (zh) * | 2013-09-23 | 2015-03-25 | 中芯国际集成电路制造(上海)有限公司 | 穿透硅通孔结构的形成方法以及集成电路制造方法 |
CN107611018A (zh) * | 2017-09-26 | 2018-01-19 | 上海华虹宏力半导体制造有限公司 | 一种改善晶圆应力的方法和晶圆结构 |
CN113327851A (zh) * | 2020-10-30 | 2021-08-31 | 上海先进半导体制造有限公司 | 一种去除半导体器件表面钨残留的方法 |
Citations (5)
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US20100130002A1 (en) * | 2008-11-25 | 2010-05-27 | Dao Thuy B | Multilayered through via |
US20100130008A1 (en) * | 2008-11-25 | 2010-05-27 | Smith Bradley P | Through-via and method of forming |
CN101752342A (zh) * | 2008-12-02 | 2010-06-23 | 台湾积体电路制造股份有限公司 | 集成电路结构 |
US20100237472A1 (en) * | 2009-03-18 | 2010-09-23 | International Business Machines Corporation | Chip Guard Ring Including a Through-Substrate Via |
CN102208342A (zh) * | 2010-03-30 | 2011-10-05 | 台湾积体电路制造股份有限公司 | 硅穿孔的形成方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20100130002A1 (en) * | 2008-11-25 | 2010-05-27 | Dao Thuy B | Multilayered through via |
US20100130008A1 (en) * | 2008-11-25 | 2010-05-27 | Smith Bradley P | Through-via and method of forming |
CN101752342A (zh) * | 2008-12-02 | 2010-06-23 | 台湾积体电路制造股份有限公司 | 集成电路结构 |
US20100237472A1 (en) * | 2009-03-18 | 2010-09-23 | International Business Machines Corporation | Chip Guard Ring Including a Through-Substrate Via |
CN102208342A (zh) * | 2010-03-30 | 2011-10-05 | 台湾积体电路制造股份有限公司 | 硅穿孔的形成方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104465492A (zh) * | 2013-09-23 | 2015-03-25 | 中芯国际集成电路制造(上海)有限公司 | 穿透硅通孔结构的形成方法以及集成电路制造方法 |
CN104465492B (zh) * | 2013-09-23 | 2018-03-16 | 中芯国际集成电路制造(上海)有限公司 | 穿透硅通孔结构的形成方法以及集成电路制造方法 |
CN103956333A (zh) * | 2014-05-07 | 2014-07-30 | 华进半导体封装先导技术研发中心有限公司 | 基于中通孔制作方法的tsv、m1、ct金属层一次成型方法 |
CN103956333B (zh) * | 2014-05-07 | 2016-06-01 | 华进半导体封装先导技术研发中心有限公司 | 基于中通孔制作方法的tsv、m1、ct金属层一次成型方法 |
CN107611018A (zh) * | 2017-09-26 | 2018-01-19 | 上海华虹宏力半导体制造有限公司 | 一种改善晶圆应力的方法和晶圆结构 |
CN113327851A (zh) * | 2020-10-30 | 2021-08-31 | 上海先进半导体制造有限公司 | 一种去除半导体器件表面钨残留的方法 |
CN113327851B (zh) * | 2020-10-30 | 2024-06-04 | 上海先进半导体制造有限公司 | 一种去除半导体器件表面钨残留的方法 |
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