CN103058192B - 一种用于碳化硅晶体生长的碳化硅微粉的制备方法 - Google Patents
一种用于碳化硅晶体生长的碳化硅微粉的制备方法 Download PDFInfo
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- CN103058192B CN103058192B CN201310003974.0A CN201310003974A CN103058192B CN 103058192 B CN103058192 B CN 103058192B CN 201310003974 A CN201310003974 A CN 201310003974A CN 103058192 B CN103058192 B CN 103058192B
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- powder
- silicon carbide
- carbide micro
- silicon
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 26
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 239000000843 powder Substances 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 15
- 239000010703 silicon Substances 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 title claims abstract description 11
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 235000013312 flour Nutrition 0.000 claims abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 16
- 239000000428 dust Substances 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 238000002156 mixing Methods 0.000 claims abstract description 8
- 239000012467 final product Substances 0.000 claims abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 7
- 238000013467 fragmentation Methods 0.000 abstract description 5
- 238000006062 fragmentation reaction Methods 0.000 abstract description 5
- 239000000047 product Substances 0.000 abstract description 4
- 239000003595 mist Substances 0.000 description 5
- 230000002194 synthesizing effect Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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CN201310003974.0A CN103058192B (zh) | 2013-01-06 | 2013-01-06 | 一种用于碳化硅晶体生长的碳化硅微粉的制备方法 |
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CN201310003974.0A CN103058192B (zh) | 2013-01-06 | 2013-01-06 | 一种用于碳化硅晶体生长的碳化硅微粉的制备方法 |
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CN103058192A CN103058192A (zh) | 2013-04-24 |
CN103058192B true CN103058192B (zh) | 2016-05-25 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106882806A (zh) * | 2015-12-12 | 2017-06-23 | 天津榛发科技有限责任公司 | 一种碳化硅微粉的制备方法 |
CN108946735B (zh) * | 2017-05-19 | 2022-11-11 | 新疆天科合达蓝光半导体有限公司 | 一种碳化硅晶体生长用大粒径碳化硅粉料的合成方法 |
CN107128924A (zh) * | 2017-06-13 | 2017-09-05 | 宁夏大学 | 一种利用微波烧结制备β‑SiC的方法 |
CN107974712A (zh) * | 2017-11-14 | 2018-05-01 | 山东天岳先进材料科技有限公司 | 一种半绝缘碳化硅单晶的制备方法 |
CN111960420A (zh) * | 2020-09-03 | 2020-11-20 | 上海第二工业大学 | 一种微波辐照电子废弃物快速生产纳米碳化硅的方法 |
CN115124040A (zh) * | 2022-07-07 | 2022-09-30 | 安徽微芯长江半导体材料有限公司 | 一种提高大粒径碳化硅粉料占比的固相合成方法 |
Citations (1)
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CN102701208A (zh) * | 2012-06-21 | 2012-10-03 | 上海硅酸盐研究所中试基地 | 高纯碳化硅粉体的高温固相合成方法 |
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JPS5325300A (en) * | 1976-08-20 | 1978-03-08 | Nippon Crucible Co | Process for preparing betaatype silicon carbide particle |
SU1706963A1 (ru) * | 1988-04-28 | 1992-01-23 | Институт структурной макрокинетики АН СССР | Способ получени @ -карбида кремни |
CN1304286C (zh) * | 2004-12-30 | 2007-03-14 | 清华大学 | 一种SiC微米粉体的制备方法 |
CN101891192B (zh) * | 2010-07-02 | 2012-01-18 | 山东大学 | 一种固相反应合成碳化物纳米粉体的方法 |
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CN102701208A (zh) * | 2012-06-21 | 2012-10-03 | 上海硅酸盐研究所中试基地 | 高纯碳化硅粉体的高温固相合成方法 |
Non-Patent Citations (1)
Title |
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Microwave synthesis of phase-pure,fine silicon carbide powder;L.N.Satapathy etc.;《Materials Research Bulletin》;20051006;第40卷(第10期);1871-1882 * |
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Address after: 102206, Changping District, Shahe, Beijing Town, North Village Road, West Bridge, Shahe industrial city Applicant after: Hebei Tongguang Crystal Co., Ltd. Address before: Four building B, building 071051, building six, Science Park, 5699 North Second Ring Road, Hebei, Baoding, Applicant before: Baoding Kerui Crystal Co., Ltd. |
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Denomination of invention: Preparation method of silicon carbide micro-powder used in silicon carbide crystal growth Effective date of registration: 20160826 Granted publication date: 20160525 Pledgee: Chinese for key construction fund limited Pledgor: Hebei Tongguang Crystal Co., Ltd. Registration number: 2016990000669 |
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Date of cancellation: 20201207 Granted publication date: 20160525 Pledgee: Chinese for key construction fund Ltd. Pledgor: HEBEI TONGGUANG CRYSTAL Co.,Ltd. Registration number: 2016990000669 |
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Address after: No. 6001, North Third Ring Road, Baoding City, Hebei Province Patentee after: Hebei Tongguang Semiconductor Co.,Ltd. Address before: 102206 West Shahe Industrial City, ZhuangQiao, beiercun Road, Shahe Town, Changping District, Beijing Patentee before: HEBEI TONGGUANG CRYSTAL Co.,Ltd. |