CN103046027A - Surface field enhancement device for large plate-type PECVD equipment - Google Patents
Surface field enhancement device for large plate-type PECVD equipment Download PDFInfo
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- CN103046027A CN103046027A CN2012105934367A CN201210593436A CN103046027A CN 103046027 A CN103046027 A CN 103046027A CN 2012105934367 A CN2012105934367 A CN 2012105934367A CN 201210593436 A CN201210593436 A CN 201210593436A CN 103046027 A CN103046027 A CN 103046027A
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Abstract
The invention belongs to the technical field of surface field enhancement for PECVD (plasma enhanced chemical vapor deposition) equipment, in particular to a surface field enhancement device for large plate-type PECVD equipment. The surface field enhancement device comprises a process chamber, as well as an electrode base plate, a carbon plate, conveying rollers and an insulation pin arranged in the process chamber, wherein the electrode base plate is fixedly connected to the inner wall of the process chamber through the insulation pin; the carbon plate is arranged under the electrode base plate, and a gap is reserved between the carbon plate and the electrode base plate; and voltage is switched in the electrode base plate. According to the invention, N<3-> or Si<4+> ions can be magnetized, ion discharge conveying to the growth surface is increased, and the deposition rate can be improved.
Description
Technical field
The invention belongs to PECVD equipment surface electric field enhancement techniques field, specifically a kind of surface field intensifier for large plate-type PECVD equipment.
Background technology
Along with the fast development of economic construction, microelectronics has obtained rapidly development, and the exploitation of PECVD apparatus for processing plasma and use are also increasingly extensive.
PECVD is the plasma enhanced chemical vapor deposition method, when chemical vapour deposition, for chemical reaction can be carried out under lower temperature, can utilize the activity of plasma body to promote reaction, this chemical gaseous phase depositing process is called the plasma enhanced chemical vapor deposition method, and the equipment of implementing this kind working method is PECVD equipment.
The characteristics of the microwave PECVD method reaction chamber of industrial applications are that the composition of its plasma source is that (number is by the scale of system, i.e. production capacity and deciding by several.) 1 meter long silica tube is parallel side by side a copper rod antenna in the every silica tube, forms coaxial system.Every copper rod antenna ends connects respectively a microwave generator.Microwave plasma is a kind of plasma reaction system that does not need electrode and heating element.Microwave PECVD is at the microwave of 2.45GHZ and in rough vacuum (10 by operating frequency
-1-10
-2Mbar) under, provocative reaction gas SiH
4(silane) and NH
3(ammonia), the high temperature that produces when utilizing geseous discharge impel gas generation chemical reaction and are deposited on formation SiN film on the substrate.In microwave-excitation gas process, the silica tube exterior circumferential forms the plasma body of the blue tint light of a circle, and evenly distributes along silica tube.This deposit mode underlayer temperature is lower, is 350 ℃-400 ℃, evenly distributes along the silica tube direction, regulates respectively the microwave power at silica tube two ends, obtains the density of plasma body.The plasma body that every straight line microwave plasma source produces roughly is to be that 200mm, length are that 1.5m(is equivalent to plasma source length at diameter) scope in.The number that increases this microwave plasma source can form large-area plasma source, has also increased the plasma body area, thereby increases the speed and the homogeneity of improving film of thin-film deposition.Because microwave plasma has its unique characteristics, it is to be produced by the microwave discharge energizing gas, plasma density is high, do not need a large amount of ionic bombardments to produce plasma body, the thin-film deposition technology of this plasma body will not produce the damage of any ion pair silicon face, namely not produce the surface recombination center.And a large amount of H(hydrogen in the plasma body) passivation in deposit SiN film has huge help with the hydrogeneous SiN film that obtains high passive behavior to content to silicon face.The PECVD system design uses again the utilization ratio of reactant gases to improve the efficient raising of gas reforming and SiN indirectly, and air-loss reduces.In order to strengthen plasma uniformity and stability, in operating pressure from 10
-2Mbar to 1mbar on a large scale in, added magnetic field on the both sides of coaxial system, it has also strengthened exciting of plasma body simultaneously, improves plasma density and thin-film deposition speed.
Summary of the invention
For the problems referred to above, the object of the present invention is to provide a kind of surface field intensifier for large plate-type PECVD equipment, its have simple in structure, can effectively reduce the characteristics such as cost.
To achieve these goals, the present invention is by the following technical solutions:
A kind of surface field intensifier for large plate-type PECVD equipment, comprise process cavity and be arranged at process cavity interior electrode base board, carbon plate, conveying roller and dielectric pin, wherein electrode base board is fixed on the inwall of process cavity by dielectric pin, described carbon plate is arranged on the conveying roller and is positioned at the below of electrode base board, leave the gap between carbon plate and the electrode base board, described electrode base board access voltage attracts N
3-Or Si
4+Ion.
Gap between described electrode base board and the electrode base board is 10～60mm.Described electrode base board access voltage be direct current 0～3000V or-3000～0V.The surface of described electrode base board is that plane and area are 1m
2Described electrode base board adopts metallic substance.Described electrode base board adopts aluminium, copper or steel.
Advantage of the present invention and beneficial effect are:
1. the present invention can attract N
3-Or Si
4+Ion has increased the N that is transported to growth surface
3-Or Si
4+Ion-flow rate can improve sedimentation rate.
2. the present invention not only can be applied on the PECVD of crystal silicon solar batteries, can also be applied on all IC equipments with plasma producing apparatus.
Description of drawings
Fig. 1 is structural representation of the present invention.
Wherein: 1 is conveying roller, and 2 is carbon plate, and 3 is aluminium sheet, and 4 is U-shaped groove, and 5 is silica tube, and 6 is copper conductor tube, and 7 is process cavity, and 8 is dielectric pin.
Embodiment
The present invention is described in further detail below in conjunction with drawings and Examples.
As shown in Figure 1, the present invention includes process cavity 7 and the electrode base board 3, carbon plate 2, conveying roller 1 and the dielectric pin 8 that are arranged in the process cavity 7, wherein electrode base board 3 is fixed on the inwall of process cavity 7 by dielectric pin 8, carbon plate 2 is arranged on the conveying roller 1 and is positioned at the below of electrode base board 3, leaves the gap of 10～60mm between carbon plate 2 and the electrode base board 3.The surface of electrode base board 3 is that plane and area are 1m
2, electrode base board 3 adopts the metallic conduction material, such as a kind of or its alloy material that adopts aluminium, copper or steel etc.Electrode base board 3 access direct current 0～3000V or-voltage of 3000～0V, attract N
3-Or Si
4+Ion.
The present invention can attract N
3-Or Si
4+Ion has increased the N that is transported to growth surface
3-Or Si
4+Ion-flow rate can improve sedimentation rate.The present invention not only can be applied on the PECVD of crystal silicon solar batteries, can also be applied on all IC equipments with plasma producing apparatus.
Embodiment one
Electrode base board 3 is that area is 1m
2Aluminium sheet, this surface of aluminum plate is the plane, and is unsettled with respect to carbon plate 2, and and carbon plate between distance be 10mm.Electrode base board 3 is fixed on the inwall of process cavity 7 by four dielectric pin 8, accesses the voltage of constant-2000V.
This device can attract Si
4+Ion has increased the Si that is transported to growth surface
4+Ion-flow rate can improve sedimentation rate.
Embodiment two
Electrode base board 3 is that area is 1m
2Copper coin, this copper coin surface is the plane, and is unsettled with respect to carbon plate 2, and and carbon plate 2 between just distance be 30mm.Electrode base board 3 is fixed on the inwall of process cavity 7 by four dielectric pin 8, accesses the voltage of constant 1290V.
This device can attract N
3-Ion has increased the N that is transported to growth surface
3-Ion-flow rate can improve sedimentation rate.
Claims (6)
1. surface field intensifier that is used for large plate-type PECVD equipment, it is characterized in that: comprise process cavity (7) and be arranged at process cavity (7) interior electrode base board (3), carbon plate (2), conveying roller (1) and dielectric pin (8), wherein electrode base board (3) is fixed on the inwall of process cavity (7) by dielectric pin (8), described carbon plate (2) is arranged at conveying roller (1) upward and is positioned at the below of electrode base board (3), leave the gap between carbon plate (2) and the electrode base board (3), described electrode base board (3) access voltage attracts N
3-Or Si
4+Ion.
2. by the surface field intensifier for large plate-type PECVD equipment claimed in claim 1, it is characterized in that: the gap between described electrode base board (3) and the electrode base board (3) is 10～60mm.
3. by the surface field intensifier for large plate-type PECVD equipment claimed in claim 1, it is characterized in that: described electrode base board (3) access voltage be direct current 0～3000V or-3000～0V.
4. by the surface field intensifier for large plate-type PECVD equipment claimed in claim 1, it is characterized in that: the surface of described electrode base board (3) is that plane and area are 1m
2
5. by each described surface field intensifier for large plate-type PECVD equipment of claim 1-4, it is characterized in that: described electrode base board (3) adopts metallic substance.
6. by the surface field intensifier for large plate-type PECVD equipment claimed in claim 5, it is characterized in that: described electrode base board (3) adopts aluminium, copper or steel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105934367A CN103046027A (en) | 2012-12-29 | 2012-12-29 | Surface field enhancement device for large plate-type PECVD equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105934367A CN103046027A (en) | 2012-12-29 | 2012-12-29 | Surface field enhancement device for large plate-type PECVD equipment |
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|---|---|
| CN103046027A true CN103046027A (en) | 2013-04-17 |
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ID=48058884
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|---|---|---|---|
| CN2012105934367A Pending CN103046027A (en) | 2012-12-29 | 2012-12-29 | Surface field enhancement device for large plate-type PECVD equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111501026A (en) * | 2020-04-28 | 2020-08-07 | 无锡思锐电子设备科技有限公司 | Method for improving quality of aluminum oxide film in solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09139379A (en) * | 1995-11-14 | 1997-05-27 | Sony Corp | Microwave plasma reactor |
| US20030064169A1 (en) * | 2001-09-28 | 2003-04-03 | Hong Jin Pyo | Plasma enhanced chemical vapor deposition apparatus and method of producing carbon nanotube using the same |
| JP2006265079A (en) * | 2005-03-25 | 2006-10-05 | Kyoto Institute Of Technology | Apparatus for plasma enhanced chemical vapor deposition and method for manufacturing carbon nanotube |
-
2012
- 2012-12-29 CN CN2012105934367A patent/CN103046027A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09139379A (en) * | 1995-11-14 | 1997-05-27 | Sony Corp | Microwave plasma reactor |
| US20030064169A1 (en) * | 2001-09-28 | 2003-04-03 | Hong Jin Pyo | Plasma enhanced chemical vapor deposition apparatus and method of producing carbon nanotube using the same |
| JP2006265079A (en) * | 2005-03-25 | 2006-10-05 | Kyoto Institute Of Technology | Apparatus for plasma enhanced chemical vapor deposition and method for manufacturing carbon nanotube |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111501026A (en) * | 2020-04-28 | 2020-08-07 | 无锡思锐电子设备科技有限公司 | Method for improving quality of aluminum oxide film in solar cell |
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Application publication date: 20130417 |