CN103035546B - 一种小尺寸键合点双线键合方法 - Google Patents

一种小尺寸键合点双线键合方法 Download PDF

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CN103035546B
CN103035546B CN201210549358.0A CN201210549358A CN103035546B CN 103035546 B CN103035546 B CN 103035546B CN 201210549358 A CN201210549358 A CN 201210549358A CN 103035546 B CN103035546 B CN 103035546B
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bonding
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CN103035546A (zh
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陈�光
孙永斌
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Kodenshi Corp
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Horizon Semiconductor (shenyang) Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4941—Connecting portions the connecting portions being stacked
    • H01L2224/49429—Wedge and ball bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

本发明属集成电路制造技术领域，尤其涉及一种小尺寸焊盘双线键合方法，可按如下步骤依次实施：a、键合第一号线（1）；第一号线的第二键合点（102）置于芯片（3）上；第一号线的线球（101）置于衬底（4）上；b、键合第二号线（2）；第二号线的线球（201）置于芯片（3）上，第二号线的第二键合点（202）置于在衬底（4）上；第二号线的线球（201）键合在第一号线的第二键合点（102）上。本发明操作简单，集成电路可靠性及成品率高，可实现小尺寸焊盘芯片批量键合。

Description

一种小尺寸键合点双线键合方法
技术领域
本发明属集成电路制造技术领域，尤其涉及一种小尺寸键合点双线键合方法。
背景技术
随着集成电路技术的进步，对混合电路的集成度要求愈来愈高，芯片的功能不断增加，尺寸却愈来愈小，从而导致焊盘在整个芯片中所占的面积比率明显上升，这就给正常的双线键合带来了困难。然而引线键合系半导体封装工艺中的关键技术，它直接影响集成电路的可靠性和成品率。
参见图1所示，目前，常规双线键合工艺一般采用两条线并排键合模式，这就要求线球位置的焊盘尺寸较大。参见图2，尺寸P就是焊盘的最小尺寸，考虑到键合工具(图2中的劈刀)的尺寸，P要比线球直径的2倍要大。如果此处的焊盘尺寸小于P，那么就无法进行双线键合。
发明内容
本发明旨在克服现有技术的不足之处而提供一种操作简单，集成电路可靠性及成品率高，可实现小尺寸，焊盘芯片批量键合的小尺寸键合点双线键合方法。
为达到上述目的，本发明是这样实现的。
一种小尺寸键合点双线键合方法，可按如下步骤依次实施。
a、键合第一号线；第一号线的第二键合点置于芯片上；第一号线的线球置于衬底上。
b、键合第二号线；第二号线的线球置于芯片上，第二号线的第二键合点置于在衬底上；第二号线的线球键合在第一号线的第二键合点上。
本发明操作简单，集成电路可靠性及成品率高，可实现小尺寸焊盘芯片批量键合。
本发明芯片上的键合位置，第二号线的线球与第一号线的第二键合点是上下叠在一起的，需要的焊盘尺寸满足不小于线球直径即可。因此，只要焊盘尺寸可以进行单线键合，就能够进行双线键合。相比常规的双线键合工艺，本发明可以在更小的焊盘上来实现双线键合。只要焊盘尺寸可以进行单线键合，就能够进行双线键合。
附图说明
下面结合附图和具体实施方式对本发明作进一步说明。本发明的保护范围不仅局限于下列内容的表述。
图1为常规双线键合示意图。
图2为常规双线键合作业示意图。
图3为本发明双线键合作业俯视图。
图4为本发明双线键合作业侧视图。
图中：1、第一号线；2、第二号线；3、芯片；4、衬底；5、线球；6、线的第二键合点；7、劈刀；8、线；102、第一号线的第二键合点；101、第一号线的线球；202、第二号线的第二键合点；201、第二号线的线球。
具体实施方式
如图所示，假设芯片上的焊盘尺寸小，而衬底上的焊盘足够大，小尺寸Pad双线键合方法，可按如下步骤依次实施。
a、键合第一号线1；第一号线的第二键合点102置于芯片3上；第一号线的线球101置于衬底4上。
b、键合第二号线2；第二号线的线球201置于芯片3上，第二号线的第二键合点202置于在衬底4上；第二号线的线球201键合在第一号线的第二键合点102上。
双线键合的目的是为了提高键合的可靠性，一般用于对可靠性要求比较高的产品中。这是一种适用于小尺寸焊盘场合的双线键合方法，这里说的小尺寸的焊盘一般是指芯片上的焊盘也就是芯片上的键合点。本发明可适用于金丝球焊、铜丝球焊及类似的键合工艺。
可以理解地是，以上关于本发明的具体描述，仅用于说明本发明而并非受限于本发明实施例所描述的技术方案，本领域的普通技术人员应当理解，仍然可以对本发明进行修改或等同替换，以达到相同的技术效果；只要满足使用需要，都在本发明的保护范围之内。

Claims (1)

1.一种小尺寸键合点双线键合方法，其特征在于，按如下步骤依次实施：
a、键合第一号线（1）；第一号线的第二键合点（102）置于芯片（3）上；第一号线的线球（101）置于衬底（4）上；
b、键合第二号线（2）；第二号线的线球（201）置于芯片（3）上，第二号线的第二键合点（202）置于在衬底（4）上；第二号线的线球（201）键合在第一号线的第二键合点（102）上。
CN201210549358.0A 2012-12-18 2012-12-18 一种小尺寸键合点双线键合方法 Active CN103035546B (zh)

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CN105845655B (zh) * 2016-03-24 2018-05-04 中国电子科技集团公司第二十九研究所 微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0148883B1 (ko) * 1995-05-17 1998-12-01 김광호 이중 와이어 본딩을 이용한 반도체 패키지
US6189765B1 (en) * 1998-04-14 2001-02-20 Hyundai Electronics Industries Co., Ltd. Apparatus and method for detecting double wire bonding
KR20050048430A (ko) * 2003-11-19 2005-05-24 앰코 테크놀로지 코리아 주식회사 반도체 장치의 이중 와이어 본딩 구조
JP2008066370A (ja) * 2006-09-05 2008-03-21 Yamaha Corp ワイヤのボンディング方法
CN101552257A (zh) * 2008-03-31 2009-10-07 恩益禧电子股份有限公司 能够切换操作模式的半导体器件
CN102437141A (zh) * 2011-12-09 2012-05-02 天水华天科技股份有限公司 密节距小焊盘铜线键合单ic芯片封装件及其制备方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0148883B1 (ko) * 1995-05-17 1998-12-01 김광호 이중 와이어 본딩을 이용한 반도체 패키지
US6189765B1 (en) * 1998-04-14 2001-02-20 Hyundai Electronics Industries Co., Ltd. Apparatus and method for detecting double wire bonding
KR20050048430A (ko) * 2003-11-19 2005-05-24 앰코 테크놀로지 코리아 주식회사 반도체 장치의 이중 와이어 본딩 구조
JP2008066370A (ja) * 2006-09-05 2008-03-21 Yamaha Corp ワイヤのボンディング方法
CN101552257A (zh) * 2008-03-31 2009-10-07 恩益禧电子股份有限公司 能够切换操作模式的半导体器件
CN102437141A (zh) * 2011-12-09 2012-05-02 天水华天科技股份有限公司 密节距小焊盘铜线键合单ic芯片封装件及其制备方法

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