CN105845655B - 微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构 - Google Patents
微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构 Download PDFInfo
- Publication number
- CN105845655B CN105845655B CN201610172241.3A CN201610172241A CN105845655B CN 105845655 B CN105845655 B CN 105845655B CN 201610172241 A CN201610172241 A CN 201610172241A CN 105845655 B CN105845655 B CN 105845655B
- Authority
- CN
- China
- Prior art keywords
- lead
- bonding
- superposition
- ball
- microbonding disk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/4814—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate the wire connector connecting to a bonding area protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48484—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side
- H01L2224/48488—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side the connecting portion being a ball bond, i.e. ball on pre-ball
- H01L2224/48489—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side the connecting portion being a ball bond, i.e. ball on pre-ball on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/494—Connecting portions
- H01L2224/4941—Connecting portions the connecting portions being stacked
- H01L2224/4942—Ball bonds
- H01L2224/49421—Ball bonds on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/494—Connecting portions
- H01L2224/4941—Connecting portions the connecting portions being stacked
- H01L2224/49425—Wedge bonds
- H01L2224/49426—Wedge bonds on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92127—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a wire connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
本发明公开了一种微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构,所述方法包括以下步骤:在第二基材的微焊盘上单独植球,获得包括焊球的微焊盘;用普通键合模式键合第一引线,将微焊盘上的焊球作为第一引线的第二键合点并将第一引线的一端键合在第一引线的第二键合点上;用普通键合模式键合第二引线,将第一引线的第二键合点作为第二引线的第二键合点并将第二引线的一端叠加键合在焊球上方第一引线的第二键合点上;重复操作直至完成最后一根引线的叠加键合;各引线的第一键合点位于第一基材的微焊盘上并且第一键合点为独立键合,引线的数量为至少两根且不超过十根。微焊盘叠加键合结构采用上述微焊盘上叠加进行球形焊接的方法制备得到。
Description
技术领域
本发明涉及微电子技术领域,更具体地讲,涉及一种使用球焊机在微焊盘上叠加键合至少2根引线的方法和键合结构。
背景技术
半导体器件芯片的焊盘越来越小,焊盘单边尺寸已经由100微米减小至30微米以下,也称作为微焊盘。此外,在毫米波、微波等高频组件的半导体器件互连领域中,因多根引线较单一引线互连键合有降低寄生电感等优势,在半导体器件互连必须至少键合2根引线。目前,普遍使用手动楔焊机实现单一焊盘同时并列键合/或叠加键合2根引线结构来实现以上功能。
普通的引线球焊键合工艺较楔形焊键合工艺键合效率、可靠性高,在键合单根引线方面广范围使用。其普通键合模式是第一焊点为球键合、焊球的直径为线径的2到5倍,第二焊点为鱼尾状。
因此,焊盘尺寸的不断减小使得使用球形焊键和工艺实现单焊盘上同时键合至少两根引线的键合结构是一项难题和巨大的挑战。
发明内容
为了解决现有技术中存在的问题,本发明的目的是提供一种使用球焊机实现在微焊盘上叠加键合至少2根引线的方法和叠加键合结构。
本发明提供了一种微焊盘上叠加进行球形焊接的方法,所述方法包括以下步骤:
A、在第二基材的微焊盘上单独植球,获得包括焊球的微焊盘;
B、用普通键合模式键合第一引线,其中,将所述微焊盘上的焊球作为第一引线的第二键合点并将第一引线的一端键合在所述第一引线的第二键合点上;
C、用普通键合模式键合第二引线,其中,将所述第一引线的第二键合点作为第二引线的第二键合点并将第二引线的一端叠加键合在所述焊球上方第一引线的第二键合点上;
D、重复操作直至完成最后一根引线的叠加键合;
其中,各引线的第一键合点位于第一基材的微焊盘上并且所述第一键合点为独立键合,引线的数量为至少两根且不超过十根。
根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例,所述方法还包括在最后一根引线的第一键合点上进行保护植球的步骤。
根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例,采用手动球焊机或全自动球焊机进行植球和引线键合。
根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例,所述独立键合通过在单一微焊盘上焊接单根引线或组合焊接多根引线实现。
根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例,所述普通键合模式为通过超声的方法将引线的一端烧成球状,通过劈刀将所述引线的一端压合在加热的第一基材的微焊盘上的第一键合点处并形成第一焊点,所述第一焊点为球状键合;之后移动劈刀至第二基材的微焊盘上方,通过超声热压的方法将引线的另一端键合在第二基材的微焊盘上的第二键合点处并折断形成第二焊点,所述第二焊点为鱼尾状键合。
根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例,所述第一基材或第二基材为半导体器件、陶瓷电路基板或有机基板。
根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例,所述微焊盘的单边尺寸在200微米以下。
根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例,所述引线为直径在80微米以下的铜引线、金引线、铝引线或银引线。
根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例,所述焊球或保护焊球的直径为引线的直径的2~5倍。
本发明的另一方面提供了一种微焊盘叠加键合结构,所述微焊盘叠加键合结构采用上述微焊盘上叠加进行球形焊接的方法制备得到。
与现有技术相比,本发明的微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构利用球焊机实现在微焊盘上叠加键合至少2根引线,并通过保护植球保护多根引线依次叠加的键合点,提高了单一焊盘叠焊的可靠性;此外,通过该键合结构,可以合并相同功能的微焊盘,减少输入输出的微焊盘数量,可进一步缩小半导体芯片尺寸;本发明制备得到的叠加键合结构的破坏性测试满足GJB 548B-2005《微电子器件试验方法和程序》方法2011.1键合强度标准。
附图说明
图1示出了根据本发明示例1中在半导体芯片微焊盘上叠加进行球形焊接得到的叠加两根引线的微焊盘叠加键合结构的俯视图。
图2示出了根据本发明示例1中在半导体芯片微焊盘上叠加进行球形焊接得到的叠加两根引线的微焊盘叠加键合结构的侧视图。
附图标记说明:
1-半导体芯片、2-基板电路片、3-包括焊球的微焊盘、4-第一引线、5-第二引线、6-保护植球。
具体实施方式
本说明书中公开的所有特征,或公开的所有方法或过程中的步骤,除了互相排斥的特征和/或步骤以外,均可以以任何方式组合。
本说明书(包括任何附加权利要求、摘要和附图)中公开的任一特征,除非特别叙述,均可被其他等效或具有类似目的的替代特征加以替换。即,除非特别叙述,每个特征只是一系列等效或类似特征中的一个例子而已。
下面将对本发明的微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构进行详细的说明。
根据本发明的示例性实施例,所述微焊盘上叠加进行球形焊接的方法包括以下多个步骤。
步骤A:
在第二基材的微焊盘上单独植球,获得包括焊球的微焊盘。
其中,可以采用手动球焊机或全自动球焊机进行植球。
第二基材可以是半导体器件(如Si基、GaAs基、GaN基等)、陶瓷电路基板(如薄膜陶瓷电路、厚膜陶瓷电路、LTCC等)或有机基板(如PCB、印制电路、塑料基材等)等任何基材,而其上的微焊盘可以基于上述任何基材制备得到。
预先在微焊盘上进行植球的目的是为了保护第二基材(如半导体管芯)不被损坏并增大焊盘面积。而采用自动球焊机可以使本步骤自动化进行,具有很强的推广适用性。
步骤B:
用普通键合模式键合第一引线,其中,将所述微焊盘上的焊球作为第一引线的第二键合点并将第一引线的一端键合在所述第一引线的第二键合点上。
其中,第二键合点是相对于第一键合点而言的概念,第二键合点是指引线与第二基材焊接键合的位置,第一键合点是指引线与第一基材焊接键合的位置。具体地,可以直接将第一引线的一端键合至微焊盘上的焊球上。
在进行引线键合时,同样地可以采用手动球焊机或全自动球焊机进行。
步骤C:
用普通键合模式键合第二引线,其中,将所述第一引线的第二键合点作为第二引线的第二键合点并将第二引线的一端叠加键合在所述焊球上方第一引线的第二键合点上。
由于本发明需要在微焊盘上叠加键合多根引线,因此需要选择叠加的最优方式并保证键合的强度。根据本发明,优选地直接将第一引线的第二键合点作为第二引线的第二键合点,从而可以直接将第二引线的一端叠加键合至第一引线的第二键合点上,由此实现两根引线在微焊盘上的有效叠加键合。
步骤D:
重复操作直至完成最后一根引线的叠加键合。其中,引线的数量为至少两根且不超过十根。
根据本发明,上述第一引线、第二引线等各引线的第一键合点位于第一基材的微焊盘上并且所述第一键合点为独立键合。如上所述,第一键合点是指引线与第一基材焊接键合的位置,通过引线两端分别与第一基材和第二基材的焊接键合,从而实现诸如芯片与基板之间的电气互连或芯片之间的信息互通。具体地,上述独立键合可以通过在单一微焊盘上焊接单根引线或组合焊接多根引线来实现。第二基材也可以为半导体器件(如Si基、GaAs基、GaN基等)、陶瓷电路基板(如薄膜陶瓷电路、厚膜陶瓷电路、LTCC等)或有机基板(如PCB、印制电路、塑料基材等)等任何基材,而其上的微焊盘可以基于上述任何基材制备得到。
根据本发明,上述的普通键合模式具体为:通过超声的方法将引线的一端烧成球状,通过劈刀将引线的一端压合在加热的第一基材的微焊盘上的第一键合点处并形成第一焊点,该第一焊点为球状键合;之后移动劈刀至第二基材的微焊盘上方,通过超声热压的方法将引线的另一端键合在第二基材的微焊盘上的第二键合点处并折断形成第二焊点,该第二焊点为鱼尾状键合。也即,在本发明中,通过超声的方法将第一引线的一端烧成球状,通过劈刀将第一引线的一端压合在加热的第一基材的一个微焊盘上并形成第一焊点,该第一焊点为球状键合,其中,第一焊点是将第一引线焊接到第一基材中的第一键合点之后形成的;之后,移动劈刀至第二基材的微焊盘上方,通过超声热压的方法将第一引线的另一端键合在第二基材的包括焊球的微焊盘上并折断形成第二焊点,该第二焊点为鱼尾状键合,其中,第二焊点是将第一引线焊接到第二基材中的包括焊球的微焊盘上的第二键合点之后形成的。对于第二引线也是如此操作,只是将第一引线的第二键合点作为第二引线的第二键合点并将第二引线的一端叠加键合在焊球上方第一引线的第二键合点上即可实现叠加焊接,以此类推,实现多根引线的叠加键合并获得微焊盘叠加键合结构。
更优选地,本方法还包括在最后一根引线的第一键合点上进行保护植球的步骤,从而获得包括保护焊球的微焊盘叠加键合结构。事实上,保护植球可以起到增加叠加键合结构的可靠性的作用并保护多根叠焊引线焊点,进而实现在微焊盘上叠焊多根引线的结构,事实上,即使无保护植球也能够实现本发明的基本叠加键合结构。
根据本发明的示例性实施例,第一基材或第二基材上的微焊盘的单边尺寸在200微米以下,例如可以为30、50、80、120、200微米等尺寸。并且,引线可以为铜引线、金引线、铝引线或银引线等任何金属引线,并且引线的直径在80微米以下,例如可以为12、18、25、40、80微米等尺寸。此外,焊球或保护焊球的直径为引线的直径的2~5倍,例如,对于常用直径为25微米的引线,其焊球或保护焊球的直径可以为60微米。
也即,采用上述方法即可在半导体器件的微焊盘上叠加键合至少两根引线并获得微焊盘叠加键合结构,而本发明的微焊盘叠加键合结构则是采用上述微焊盘上叠加进行球形焊接的方法制备得到。该叠加键合结构的破坏性测试满足GJB 548B-2005《微电子器件试验方法和程序》方法2011.1键合强度标准。
下面结合具体示例对本发明作进一步说明。
示例1:
图1示出了根据本发明示例1中在半导体芯片微焊盘上叠加进行球形焊接得到的叠加两根引线的微焊盘叠加键合结构的俯视图,图2示出了根据本发明示例1中在半导体芯片微焊盘上叠加进行球形焊接得到的叠加两根引线的微焊盘叠加键合结构的侧视图。
如图1和图2所示,首先在半导体芯片1上的微焊盘上单独植球,获得包括焊球的微焊盘3;采用普通键合模式键合第一引线4,其中,将第一引线4的一端键合至作为第一引线4的第二键合点的焊球上,其中,微焊盘植球和键合第一引线的两个步骤可以在自动球焊机中直接采用Pre-Wire模式实现;然后同样采用普通键合模式键合第二引线,其中,将第二引线5的一端叠加键合至作为第二引线5的第二键合点的第一引线4的第二键合点上;由于只有两根引线,所以直接在第二引线5的第二键合点上方进行保护植球,获得保护植球6,进而获得微焊盘叠加键合结构。其中,键合第二引线和进行保护植球的两个步骤可以在自动球焊机中直接采用Post-Wire模式实现。并且,第一引线4和第二引线5的第一键合点均设置在基板电路片2上,并且通过分别在基板电路片2上的单一微焊盘上焊接单根引线实现独立球状键合。
综上所述,本发明的微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构利用球焊机实现在半导体器件焊盘上叠加键合至少2根引线,并通过保护植球保护多根引线依次叠加的键合点,提高了单一焊盘叠焊的可靠性;此外,通过该键合结构,可以合并相同功能的微焊盘,减少输入输出的微焊盘数量,可进一步缩小半导体芯片尺寸;本发明制备得到的叠加键合结构的破坏性测试满足GJB 548B-2005《微电子器件试验方法和程序》方法2011.1键合强度标准。
本发明并不局限于前述的具体实施方式。本发明扩展到任何在本说明书中披露的新特征或任何新的组合,以及披露的任一新的方法或过程的步骤或任何新的组合。
Claims (9)
1.一种微焊盘上叠加进行球形焊接的方法,其特征在于,所述方法包括以下步骤:
A、在第二基材的微焊盘上单独植球,获得包括焊球的微焊盘;
B、用普通键合模式键合第一引线,其中,将所述微焊盘上的焊球作为第一引线的第二键合点并将第一引线的一端键合在所述第一引线的第二键合点上;
C、用普通键合模式键合第二引线,其中,将所述第一引线的第二键合点作为第二引线的第二键合点并将第二引线的一端叠加键合在所述焊球上方第一引线的第二键合点上;
D、重复操作直至完成最后一根引线的叠加键合并在最后一根引线的第二键合点上进行保护植球形成保护焊球;
其中,各引线的第一键合点位于第一基材的微焊盘上并且所述第一键合点为独立键合,引线的数量为至少两根且不超过十根。
2.根据权利要求1所述的微焊盘上叠加进行球形焊接的方法,其特征在于,采用手动球焊机或全自动球焊机进行植球和引线键合。
3.根据权利要求1所述的微焊盘上叠加进行球形焊接的方法,其特征在于,所述独立键合通过在单一微焊盘上焊接单根引线或组合焊接多根引线实现。
4.根据权利要求1所述的微焊盘上叠加进行球形焊接的方法,其特征在于,所述普通键合模式为通过超声的方法将引线的一端烧成球状,通过劈刀将所述引线的一端压合在加热的第一基材的微焊盘上的第一键合点处并形成第一焊点,所述第一焊点为球状键合;之后移动劈刀至第二基材的微焊盘上方,通过超声热压的方法将引线的另一端键合在第二基材的微焊盘上的第二键合点处并折断形成第二焊点,所述第二焊点为鱼尾状键合。
5.根据权利要求1、3或4所述的微焊盘上叠加进行球形焊接的方法,其特征在于,所述第一基材或第二基材为半导体器件、陶瓷电路基板或有机基板。
6.根据权利要求1所述的微焊盘上叠加进行球形焊接的方法,其特征在于,所述微焊盘的单边尺寸在200微米以下。
7.根据权利要求1所述的微焊盘上叠加进行球形焊接的方法,其特征在于,所述引线为直径在80微米以下的铜引线、金引线、铝引线或银引线。
8.根据权利要求1所述的微焊盘上叠加进行球形焊接的方法,其特征在于,所述焊球或保护焊球的直径为引线的直径的2~5倍。
9.一种微焊盘叠加键合结构,其特征在于,所述微焊盘叠加键合结构采用权利要求1至8中任一项所述的微焊盘上叠加进行球形焊接的方法制备得到。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610172241.3A CN105845655B (zh) | 2016-03-24 | 2016-03-24 | 微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610172241.3A CN105845655B (zh) | 2016-03-24 | 2016-03-24 | 微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105845655A CN105845655A (zh) | 2016-08-10 |
CN105845655B true CN105845655B (zh) | 2018-05-04 |
Family
ID=56584427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610172241.3A Active CN105845655B (zh) | 2016-03-24 | 2016-03-24 | 微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105845655B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107170691B (zh) * | 2017-05-27 | 2019-07-16 | 中国电子科技集团公司第二十九研究所 | 一种微焊盘上叠加或并排进行自动楔焊的方法 |
CN109192848B (zh) * | 2018-10-10 | 2024-02-20 | 广东晶科电子股份有限公司 | 一种led器件及其引线键合方法 |
CN112670257A (zh) * | 2020-12-28 | 2021-04-16 | 颀中科技(苏州)有限公司 | 芯片封装结构及芯片封装方法 |
CN113830727B (zh) * | 2021-09-09 | 2024-05-24 | 中国人民解放军军事科学院国防科技创新研究院 | 微纳件的转移方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1670935A (zh) * | 2004-03-18 | 2005-09-21 | 株式会社电装 | 引线键合方法和半导体器件 |
CN101114628A (zh) * | 2006-07-27 | 2008-01-30 | 富士通株式会社 | 半导体器件及其制造方法 |
CN103035546A (zh) * | 2012-12-18 | 2013-04-10 | 可天士半导体(沈阳)有限公司 | 一种小尺寸键合点双线键合方法 |
-
2016
- 2016-03-24 CN CN201610172241.3A patent/CN105845655B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1670935A (zh) * | 2004-03-18 | 2005-09-21 | 株式会社电装 | 引线键合方法和半导体器件 |
CN101114628A (zh) * | 2006-07-27 | 2008-01-30 | 富士通株式会社 | 半导体器件及其制造方法 |
CN103035546A (zh) * | 2012-12-18 | 2013-04-10 | 可天士半导体(沈阳)有限公司 | 一种小尺寸键合点双线键合方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105845655A (zh) | 2016-08-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105845655B (zh) | 微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构 | |
CN106952885B (zh) | 封装件 | |
CN107170691B (zh) | 一种微焊盘上叠加或并排进行自动楔焊的方法 | |
US8816514B2 (en) | Microelectronic assembly with joined bond elements having lowered inductance | |
CA2727260C (en) | Through silicon via bridge interconnect | |
US6768207B2 (en) | Multichip wafer-level package and method for manufacturing the same | |
US6660559B1 (en) | Method of making a chip carrier package using laser ablation | |
CN100378934C (zh) | 倒装芯片四方扁平无引脚封装方法 | |
US6765228B2 (en) | Bonding pad with separate bonding and probing areas | |
US7911066B2 (en) | Through-chip via interconnects for stacked integrated circuit structures | |
KR20000059861A (ko) | 와이어 어래이드 칩 사이즈 패키지 및 그 제조방법 | |
JPH08510358A (ja) | 集積回路チップと基板との相互接続 | |
TW201505145A (zh) | 半導體裝置及其製造方法 | |
CN106356353A (zh) | 基板及应用该基板的焊接结构和焊接方法 | |
US6400034B1 (en) | Semiconductor device | |
CN103035628B (zh) | 具有无线激活功能块的装置 | |
JP2006134912A (ja) | 半導体モジュールおよびその製造方法、ならびにフィルムインターポーザ | |
CN110444522B (zh) | 一种芯片的制备方法及芯片 | |
US20100269333A1 (en) | Method for Mounting Flip Chip and Substrate Used Therein | |
JP2000150560A (ja) | バンプ形成方法及びバンプ形成用ボンディングツール、半導体ウエーハ、半導体チップ及び半導体装置並びにこれらの製造方法、回路基板並びに電子機器 | |
CN108346640B (zh) | 半导体结构及其制作方法 | |
TWI528516B (zh) | 晶片組裝結構及晶片組裝方法 | |
US20110147928A1 (en) | Microelectronic assembly with bond elements having lowered inductance | |
US6258622B1 (en) | Flip clip bonding leadframe-type packaging method for integrated circuit device and a device formed by the packaging method | |
CN112652549A (zh) | 垂直打线设备及打线方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Luo Jianqiang Inventor after: Pan Yuhua Inventor after: Wang Hui Inventor after: Wen Zehai Inventor after: Wu Yilong Inventor before: Luo Jianqiang Inventor before: Wang Hui Inventor before: Wen Zehai Inventor before: Wu Yilong |
|
CB03 | Change of inventor or designer information | ||
GR01 | Patent grant | ||
GR01 | Patent grant |