CN103035525A - 高压隔离n型ldmos器件的制造方法 - Google Patents
高压隔离n型ldmos器件的制造方法 Download PDFInfo
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- CN103035525A CN103035525A CN2011103052907A CN201110305290A CN103035525A CN 103035525 A CN103035525 A CN 103035525A CN 2011103052907 A CN2011103052907 A CN 2011103052907A CN 201110305290 A CN201110305290 A CN 201110305290A CN 103035525 A CN103035525 A CN 103035525A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 title abstract description 3
- 150000004706 metal oxides Chemical class 0.000 title abstract 2
- 150000002500 ions Chemical class 0.000 claims abstract description 17
- 238000002347 injection Methods 0.000 claims abstract description 11
- 239000007924 injection Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 37
- 238000002955 isolation Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 28
- 238000002513 implantation Methods 0.000 claims description 26
- 238000009792 diffusion process Methods 0.000 claims description 24
- 230000000873 masking effect Effects 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- -1 phosphonium ion Chemical class 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000005457 optimization Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0886—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110305290.7A CN103035525B (zh) | 2011-10-10 | 2011-10-10 | 高压隔离n型ldmos器件的制造方法 |
Applications Claiming Priority (1)
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CN201110305290.7A CN103035525B (zh) | 2011-10-10 | 2011-10-10 | 高压隔离n型ldmos器件的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN103035525A true CN103035525A (zh) | 2013-04-10 |
CN103035525B CN103035525B (zh) | 2015-06-03 |
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CN201110305290.7A Active CN103035525B (zh) | 2011-10-10 | 2011-10-10 | 高压隔离n型ldmos器件的制造方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103187435A (zh) * | 2011-12-28 | 2013-07-03 | 上海华虹Nec电子有限公司 | 高压隔离n型ldmos器件及其制造方法 |
CN105810740A (zh) * | 2016-04-19 | 2016-07-27 | 上海华虹宏力半导体制造有限公司 | 高压ldmos器件及工艺方法 |
CN105870188A (zh) * | 2016-04-19 | 2016-08-17 | 上海华虹宏力半导体制造有限公司 | 高压ldmos器件及工艺方法 |
CN107026200A (zh) * | 2015-09-18 | 2017-08-08 | 安普林荷兰有限公司 | 半导体器件和制造半导体器件的方法 |
CN114050181A (zh) * | 2022-01-07 | 2022-02-15 | 北京芯可鉴科技有限公司 | 一种nldmos器件及制备方法、芯片 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102074579A (zh) * | 2009-11-17 | 2011-05-25 | 美格纳半导体有限会社 | 半导体装置 |
CN102130164A (zh) * | 2010-01-18 | 2011-07-20 | 上海华虹Nec电子有限公司 | Ldmos的埋层 |
CN102130163A (zh) * | 2010-01-18 | 2011-07-20 | 上海华虹Nec电子有限公司 | Esd高压dmos器件及其制造方法 |
-
2011
- 2011-10-10 CN CN201110305290.7A patent/CN103035525B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102074579A (zh) * | 2009-11-17 | 2011-05-25 | 美格纳半导体有限会社 | 半导体装置 |
CN102130164A (zh) * | 2010-01-18 | 2011-07-20 | 上海华虹Nec电子有限公司 | Ldmos的埋层 |
CN102130163A (zh) * | 2010-01-18 | 2011-07-20 | 上海华虹Nec电子有限公司 | Esd高压dmos器件及其制造方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103187435A (zh) * | 2011-12-28 | 2013-07-03 | 上海华虹Nec电子有限公司 | 高压隔离n型ldmos器件及其制造方法 |
CN103187435B (zh) * | 2011-12-28 | 2016-06-08 | 上海华虹宏力半导体制造有限公司 | 高压隔离n型ldmos器件及其制造方法 |
CN107026200A (zh) * | 2015-09-18 | 2017-08-08 | 安普林荷兰有限公司 | 半导体器件和制造半导体器件的方法 |
CN107026200B (zh) * | 2015-09-18 | 2021-06-29 | 安普林荷兰有限公司 | 半导体器件和制造半导体器件的方法 |
CN105810740A (zh) * | 2016-04-19 | 2016-07-27 | 上海华虹宏力半导体制造有限公司 | 高压ldmos器件及工艺方法 |
CN105870188A (zh) * | 2016-04-19 | 2016-08-17 | 上海华虹宏力半导体制造有限公司 | 高压ldmos器件及工艺方法 |
CN105810740B (zh) * | 2016-04-19 | 2019-04-09 | 上海华虹宏力半导体制造有限公司 | 高压ldmos器件及工艺方法 |
CN105870188B (zh) * | 2016-04-19 | 2019-04-09 | 上海华虹宏力半导体制造有限公司 | 高压ldmos器件及工艺方法 |
CN114050181A (zh) * | 2022-01-07 | 2022-02-15 | 北京芯可鉴科技有限公司 | 一种nldmos器件及制备方法、芯片 |
CN114050181B (zh) * | 2022-01-07 | 2022-03-22 | 北京芯可鉴科技有限公司 | 一种nldmos器件及制备方法、芯片 |
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Publication number | Publication date |
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CN103035525B (zh) | 2015-06-03 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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