CN103000590A - Power module without bottom plate - Google Patents
Power module without bottom plate Download PDFInfo
- Publication number
- CN103000590A CN103000590A CN2012104001502A CN201210400150A CN103000590A CN 103000590 A CN103000590 A CN 103000590A CN 2012104001502 A CN2012104001502 A CN 2012104001502A CN 201210400150 A CN201210400150 A CN 201210400150A CN 103000590 A CN103000590 A CN 103000590A
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- CN
- China
- Prior art keywords
- power module
- thermal diffusion
- diffusion substrate
- base plate
- power
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Abstract
The invention discloses a power module without a bottom plate. The power module comprises a radiator, a ceramic copper-coated substrate, a power chip and a heat diffusion substrate. The heat diffusion substrate is arranged between the ceramic copper-coated substrate and the radiator and is combined with the radiator in a physical compression joint manner. The power module without the bottom plate has the advantage that the heat diffusion substrate is additionally arranged between the ceramic copper-coated substrate and the radiator, so that the operation junction temperature of the power module without the bottom plate is effectively reduced.
Description
Technical field
The present invention relates to a kind of without the backplane power module, relate in particular to a kind of have the thermal diffusion substrate without the backplane power module.
Background technology
Power model is formed by a series of combinations of materials such as metal base plate, ceramic copper-clad base plate and power chips usually.In order to reduce the thermal resistance of power device, improve its heat diffusion capabilities, the material of metal base plate is selected the fine copper with high heat conductance usually, forms metallic bond with brazing mode with the copper layer of ceramic copper-clad base plate and is connected.Except the requirement to the baseboard material high heat conductance, power model is in actual working environment, temperature alternating is inevitable, and the thermal coefficient of expansion lower (being about 3ppm/K) of the power chip of being made by silicon materials, and differ larger between the thermal coefficient of expansion (being about 17ppm/K) of the thermal coefficient of expansion (being about 7ppm/K) of ceramic copper-clad base plate (ceramic material is generally aluminium oxide or aluminium nitride) and fine copper base plate.(wherein the structure of each label representative is respectively: the 100-power model to please refer to Fig. 1; The 1-metal base plate; The 2-ceramic copper-clad base plate; The 3-power chip; The structural representation of the universal power model 4,5-solder layer), in power model, be formed with two-layer brazing material, one deck is between chip and ceramic copper-clad base plate, another layer is between ceramic copper-clad base plate and base plate, under actual operating conditions, owing to the difference of variations in temperature and thermal coefficient of expansion produces thermal stress.Because the solder layer area between ceramic copper-clad base plate and the base plate, far surpassed the area of solder layer under the chip, therefore the thermal stress of base plate solder layer is that power model inside is the highest, the scolder of power model is selected low-melting lead base or kamash alloy usually, actual use absolute temperature and its fusing point are very approaching, thereby cause the generation of solder layer fatigue crack, expansion, the thermal resistance of power model is sharply raise, and the working junction temperature that causes power chip is too high and " heat is run " occur.Be to improve the reliability of power model, expand the useful life of power model under harsh environment, aluminium/composite material of silicon carbide that the baseboard material of module can adopt thermal coefficient of expansion and ceramic copper-clad base plate to mate.At present, adopt the power model of these baseboard materials, at locomotive traction, aviation and new energy field have obtained the application of certain scale.
In order further to improve the power density of power model, the volume of reduction means/equipment, recently without the backplane power module in, the small-power section progressively finds application.(wherein the structure of each label representative is respectively: the 100-power model to please refer to Fig. 2; The 2-ceramic copper-clad base plate; The 3-power chip; Shown in the 4-solder layer, removed metal base plate and corresponding solder layer without the backplane power module, the bottom copper layer of ceramic copper-clad base plate directly is installed to spreader surface.Like this, in the time of the cost of power model, an important module inefficacy mechanism-solder layer thermal fatigue has just obtained effective solution.From die angle; although the thermal resistance from the chip to the module bottom surface has the situation of base plate low than in module; but owing to lacked the thermal diffusion effect of conductive sole plate, under identical condition of work, usually can be higher than module with conductive sole plate without the junction temperature of chip of floor module.
Therefore, a kind of new technical scheme of necessary proposition is to solve the defective of prior art.
Summary of the invention
It is a kind of without the backplane power module that main purpose of the present invention is to provide, and it increases the thermal diffusion substrate by between ceramic copper-clad base plate and radiator, and then reach the purpose that reduces the power chip working junction temperature.
The present invention adopts following technical scheme: a kind of without the backplane power module, it includes radiator, ceramic copper-clad base plate and power chip, describedly also include the thermal diffusion substrate that is arranged between described ceramic copper-clad base plate and the radiator without the backplane power module, the mode of described thermal diffusion substrate by the physics crimping with described radiator make up in.
As a further improvement on the present invention, described thermal diffusion substrate is the plane heat pipe type substrate with high heat conductance.
As a further improvement on the present invention, the material of described thermal diffusion substrate is aluminium, aluminium alloy or copper, copper alloy.
As a further improvement on the present invention, the thickness of described thermal diffusion substrate is 3 millimeters to 7 millimeters.
As a further improvement on the present invention, the size of described thermal diffusion substrate is with measure-alike without the ceramic copper-clad base plate of backplane power module, the thermal diffusion substrate area be 1 to 2 times of ceramic copper-clad base plate area.
The present invention has following beneficial effect: by between ceramic copper-clad base plate and radiator, increase the thermal diffusion substrate, effectively reduce the working junction temperature without the backplane power module.
Description of drawings
Fig. 1 is the structural representation of universal power model in this area.
Fig. 2 is without the structural representation of backplane power module in this area.
Fig. 3 is that the present invention is without the structural representation of backplane power module.
Fig. 4 be shown in Figure 2 be installed on the spreader surface without the backplane power module after, the junction temperature distribution situation of analogue simulation power chip under nominal current conditions.
Fig. 5 be shown in Figure 3 be installed on the spreader surface without the backplane power module after, the junction temperature distribution situation of analogue simulation power chip under nominal current conditions.
Embodiment
Please refer to shown in Figure 3ly, the present invention includes thermal diffusion substrate 1, ceramic copper-clad base plate 2 and the power chip 3 that is installed on the radiator (indicate) without backplane power module 100, wherein is formed with weld layer 4 between ceramic copper-clad base plate 2 and the power chip 3.The thickness of thermal diffusion substrate 1 is 3 millimeters to 7 millimeters, and the size of thermal diffusion substrate 1 and ceramic copper-clad base plate 2 are measure-alike, and the area of thermal diffusion substrate 1 is 1 to 2 times of the area of ceramic copper-clad base plate 2.Among the present invention without the importing by newly-increased thermal diffusion substrate 1 in the backplane power module 100, for the working junction temperature that reduces without the backplane power module provides effective way.
The present invention is without the plane heat pipe type substrate of thermal diffusion substrate 1 for having high heat conductance of backplane power module 100, and the material of thermal diffusion substrate is aluminium, aluminium alloy or copper, copper alloy.The present invention is the vacuum cavities that inwall has micro-structural without the thermal diffusion substrate 1 of backplane power module 100, and inside cavity has been filled liquid refrigerant.When heat imported into, liquid refrigerant was subjected to thermal evaporation, absorbed a large amount of heat energy, and rapid expanding is full of whole cavity, when heated gas touches the huyashi-chuuka (cold chinese-style noodles) of stow away from heat, by gaseous state to liquid condensing and release heat.Liquid refrigerant after condensing flows back to thermal source by capillary force, and this process is back and forth carried out, and has not only greatly improved heat diffusion speed, and because gravity is very little on the impact of capillary force, the thermal diffusion substrate all can effectively be worked in all angles.
The present invention becomes new base plate without the backplane power module without the thermal diffusion substrate 1 of backplane power module 100, no longer by the weld layer welding, but is combined in together by the mode of physics crimping between itself and the radiator.Owing to do not increase weld layer, the fatigue rupture mechanism of scolder does not exist in this structure yet.On the other hand, the thermal conductivity far of thermal diffusion substrate 1 is higher than the copper base plate of conventional power module.For example, the thermal conductivity of copper soleplate can reach 390 W/mK, and the available heat conductance of thermal diffusion substrate 1 can reach more than 50 times of copper soleplate.Therefore, without the backplane power module after having increased thermal diffusion substrate 1, although the thermal resistance from power chip 3 to spreader surface increases to some extent, but the super-high heat-conductive ability by thermal diffusion substrate 1, greatly increase the efficiently radiates heat area in spreader surface, reduced radiator to airborne thermal resistance, therefore, under identical power consumption and fan condition, the junction temperature of power chip 3 can greatly reduce.As the roughly judgment criterion to semiconductor device reliability, every reduction by 10 degree of power chip junction temperature, the working life of device can double.Obviously, by importing thermal diffusion substrate 1, under the identical condition of work, because the reduction of power chip 3 junction temperatures is multiplied the working life without the backplane power module; Perhaps at same power chip 3 working junction temperatures, the electric current fan-out capability of power model can significantly increase.Because the restriction of cost, the radiating condition of electric device is usually limited, so the electric current fan-out capability of bring to power device is of great significance.Electric device for example frequency converter unavoidably can run into the special operation conditions such as overcurrent and short circuit when operation, these special operation conditions are the baptisms to power model.By increasing the heat-sinking capability without the backplane power module, perhaps electric current fan-out capability, when power model moved under the same conditions, its reliability can improve greatly.
Please refer to shown in Figure 4, its for be not equipped with in this area the thermal diffusion substrate be installed on the spreader surface without the backplane power module after, by the junction temperature distribution situation of analogue simulation power chip under nominal current conditions, can find that therefrom power chip junction temperature distributional difference is obvious.Be positioned at the power chip of module periphery, because the thermal diffusion area is large, so the power chip junction temperature is lower, and is positioned at the power chip at module centers position, and the thermal diffusion area is lower, and the power chip junction temperature is up to more than 151 ℃.In the same module, the maximum temperature difference between the power chip has surpassed 20 ℃.
Please refer to shown in Figure 5, its for be equipped with in this area the thermal diffusion substrate be installed on the spreader surface without the backplane power module after, by the junction temperature distribution situation of analogue simulation power chip under nominal current conditions, therefrom can find, because the importing of thermal diffusion substrate, so that become very even without the heat radiation of floor module in the bottom surface, thus make the junction temperature of each power chip be tending towards identical, no longer include obvious relation with its position in inside modules.And the area of dissipation that significantly increases has reduced the thermal resistance of radiator, makes the junction temperature of power chip become lower.As can be seen from Figure 5, the junction temperature of power chip is compared with the result of Fig. 4, and peak has reduced more than 20 ℃.
More than; describe the preferred embodiments of the present invention in detail, but the claimed interest field of the present invention is not limited to this, has utilized basic conception of the present invention; various distortion and improvement that the person of ordinary skill in the field carries out still belong to the interest field of request of the present invention.
Claims (5)
1. one kind without the backplane power module, it includes radiator, ceramic copper-clad base plate and power chip, it is characterized in that: describedly also include the thermal diffusion substrate that is arranged between described ceramic copper-clad base plate and the radiator without the backplane power module, the mode of described thermal diffusion substrate by the physics crimping with described radiator make up in.
2. as claimed in claim 1 without the backplane power module, it is characterized in that: described thermal diffusion substrate is the plane heat pipe type substrate with high heat conductance.
3. as claimed in claim 2 without the backplane power module, it is characterized in that: the material of described thermal diffusion substrate is aluminium, aluminium alloy, copper or copper alloy.
4. as claimed in claim 3 without the backplane power module, it is characterized in that: the thickness of described thermal diffusion substrate is 3 millimeters to 7 millimeters.
5. as claimed in claim 4 without the backplane power module, it is characterized in that: the minimum dimension of described thermal diffusion substrate is with measure-alike without the ceramic copper-clad base plate of backplane power module, the maximum area of thermal diffusion substrate be 2 times of ceramic copper-clad base plate area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104001502A CN103000590A (en) | 2012-10-20 | 2012-10-20 | Power module without bottom plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104001502A CN103000590A (en) | 2012-10-20 | 2012-10-20 | Power module without bottom plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103000590A true CN103000590A (en) | 2013-03-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104001502A Pending CN103000590A (en) | 2012-10-20 | 2012-10-20 | Power module without bottom plate |
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| CN (1) | CN103000590A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876350A (en) * | 2015-12-10 | 2017-06-20 | 财团法人工业技术研究院 | Power module and method for manufacturing the same |
| US10679978B2 (en) | 2017-04-13 | 2020-06-09 | Infineon Technologies Ag | Chip module with spatially limited thermally conductive mounting body |
| CN112530888A (en) * | 2019-09-17 | 2021-03-19 | 珠海格力电器股份有限公司 | Power module and manufacturing method thereof |
| CN112687633A (en) * | 2020-12-16 | 2021-04-20 | 株洲中车时代半导体有限公司 | IGBT power module heat dissipation structure and method for improving large-area welding reliability |
-
2012
- 2012-10-20 CN CN2012104001502A patent/CN103000590A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876350A (en) * | 2015-12-10 | 2017-06-20 | 财团法人工业技术研究院 | Power module and method for manufacturing the same |
| CN106876350B (en) * | 2015-12-10 | 2019-12-24 | 财团法人工业技术研究院 | Power module and method for manufacturing the same |
| US10679978B2 (en) | 2017-04-13 | 2020-06-09 | Infineon Technologies Ag | Chip module with spatially limited thermally conductive mounting body |
| CN112530888A (en) * | 2019-09-17 | 2021-03-19 | 珠海格力电器股份有限公司 | Power module and manufacturing method thereof |
| CN112687633A (en) * | 2020-12-16 | 2021-04-20 | 株洲中车时代半导体有限公司 | IGBT power module heat dissipation structure and method for improving large-area welding reliability |
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Application publication date: 20130327 |