CN102988039A - Manufacture method microneedle array-based skin dry electrode - Google Patents

Manufacture method microneedle array-based skin dry electrode Download PDF

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Publication number
CN102988039A
CN102988039A CN2012105497914A CN201210549791A CN102988039A CN 102988039 A CN102988039 A CN 102988039A CN 2012105497914 A CN2012105497914 A CN 2012105497914A CN 201210549791 A CN201210549791 A CN 201210549791A CN 102988039 A CN102988039 A CN 102988039A
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silicon
silicon chip
skin dry
microneedle array
dry electrode
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CN2012105497914A
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裴为华
陈远方
归强
陈弘达
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Institute of Semiconductors of CAS
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Institute of Semiconductors of CAS
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Priority to CN2012105497914A priority Critical patent/CN102988039A/en
Publication of CN102988039A publication Critical patent/CN102988039A/en
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Abstract

The invention provides a manufacture method of a microneedle array-based skin dry electrode. The method comprises the following steps of A, selecting a silicon wafer; B, performing thermal oxidation on two sides of the silicon wafer to form a silicon dioxide layer respectively; C, forming periodical vertical slot with a preset depth in the silicon wafer in X direction and Y direction respectively so as to form two-dimensional square-pillar arrays; D, corroding the scribed silicon wafer in static state with isotropous corrosive liquid of silicon, and so that the two-dimensional square-pillar arrays is thinned and pointed; E, completely corroding the silicon dioxide layers from the surfaces of the silicon wafer with hydrofluoric acid or HF buffer to form an electrode pillar array; and F, sputtering metal on the surface and the back of the electrode pillar array to complete manufacture. The method can be used for manufacturing microneedle array-based skin dry electrodes in batches with low cost, and is used for detecting electroencephalogram, electrocardio, myoelectricity and other physiological signals to fulfill scientific research and clinical requirement.

Description

Making is based on the method for microneedle array skin dry electrode
Technical field
The present invention relates to a kind of dried electrode of the skin surface based on silicon that extracts biopotential for body surface, relate in particular to a kind of method of utilizing sand-wheel slice cutting machine scribing and wet etching technology low-cost production skin dry electrode.
Background technology
The biopotential signal is one of topmost physiological parameter, can be used for clinical diagnosis, patient care and biomedical research etc.Therefore, the detection of effectively carrying out electro-physiological signals has important meaning with research.Most electro-physiological signals are all to obtain by under electrode and condition that human body (body surface or intervention) contacts, and the performance of electrode will directly have influence on the success and failure of signals collecting.
The outermost horny layer of skin is nonconducting, only has by subcuticular skin corium and could extract effective electro-physiological signals.Traditional skin wet electrode uses the conductive paste that contains the high concentration conductive ion to be coated on horny layer, and conductive paste can diffuse in horny layer, and its conductive capability is improved.Coated with conductive cream can not long record, otherwise can make the subjects produce skin ulceration or the side effect such as irritated.Owing to being difficult to guarantee that by instrument design the contact interface of electrode, conductive paste, skin keeps stable, so be easy to produce the interference of baseline drift or motion artifacts, affects testing result.Skin dry electrode can overcome above shortcoming and be used for long record.Present this skin dry electrode has two kinds, and a kind of is non-intrusion type, adopts capacity coupled principle measured signal.Another kind is intrusive mood, is made of two-dimentional microneedle array, can directly sting horny layer and arrives the stratum germinativum that can conduct electricity but do not touch skin corium, the problem of having avoided the horny layer of high-impedance behavior to bring.Stratum germinativum there is no blood vessel and neural arranging, so the subjects does not have pain.
The following processing step of general employing is made the dried electrode of this intrusive mood based on two-dimentional silicon microneedle array both at home and abroad at present:
Silicon chip is prepared and thermal oxide silicon dioxide;
Use photoetching method and lift-off method to make the microneedle array figure;
Use the method for silicon deep etching to form pin post array;
Use chemical corrosion method corrosion pin post to form sharp-pointed electrode head;
At electrode surface covering metal conductive layer;
But, adopts said method to make skin dry electrode and relate to the expensive equipment such as deep etching, thereby increased cost of manufacture, and technique is comparatively complicated.
More domestic research institutions have also proposed the production program of scribing, and in order to produce up-thin-low-thick needle point structure, it adopts scribing cutter and silicon chip surface to be the modes of 45 degree when scribing, and the processing technology process need is through the angle of four adjustment cutters and silicon chip; Silicon post and the distance between the silicon post of the pyramid structure that marks are the width of two edges of a knife at least, so cost is high, and density is low.
Summary of the invention
In view of this, main purpose of the present invention is to provide the method for a kind of making based on the microneedle array skin dry electrode, and the electrode that adopts the method to make can be for extraction and the long term monitoring of physiological signal, have advantages of that cost of manufacture is low, this electrode is the intrusive mood skin-painless dry electrode simultaneously.
For achieving the above object, the invention provides a kind of making based on the method for microneedle array skin dry electrode, the method is utilized general emery wheel scribing equipment, paddle-tumble on monocrystalline silicon piece, form the two-dimentional silicon square column array that root still is connected with silicon chip, then utilize the method for isotropic etch, the square column array is corroded into most advanced and sophisticated thin, the four rib microtip arrays that root is thick, the method comprises the steps:
A, selection one silicon chip;
B, with the two sides thermal oxide layer of silicon dioxide layer of silicon chip;
C, silicon chip is formed respectively the vertical paddle-tumble of a periodic desired depth in directions X and Y-direction, form two-dimentional square column array;
D, the silicon chip with the isotropic etch liquid of silicon after to scribing carry out static corrosion, and two-dimentional square column array is attenuated to come to a point;
E, the silicon dioxide layer corrosion of silicon chip surface is clean with Fluohydric acid. or HF buffer forms the electrode column array;
The method of F, employing magnetron sputtering at electrode column array surface and back spatter metal, is completed making.
Can find out from technique scheme, what the present invention adopted is that the scribing mode forms the high two-dimentional pin post array of 200 μ m, and directly the pin post is come to a point with the isotropic etch liquid static corrosion of silicon.Such manufacture method has that cost is low, and processing step is simple, especially is fit to produce in enormous quantities.The skin dry electrode of producing can be used for the bio-signal acquisitions such as brain electricity, electrocardio, myoelectricity, satisfies scientific research and clinical demand, and use in the market that helps to enlarge dried electrode.
Description of drawings
In order to further illustrate technology contents of the present invention, below in conjunction with embodiment and accompanying drawing, the present invention is described in more detail, wherein:
Fig. 1 is manufacture method flow chart of the present invention;
Fig. 2 is the structural representation after scribing in manufacturing process of the present invention;
Fig. 3 is the structural representation that in manufacturing process of the present invention, two-dimentional square column array attenuates and comes to a point.
The specific embodiment
See also Fig. 1, coordinate and consult shown in Fig. 2,3, the invention provides a kind of making based on the method for microneedle array skin dry electrode, the method is utilized general emery wheel scribing equipment, and paddle-tumble on monocrystalline silicon piece forms the two-dimentional silicon square column array that root still is connected with silicon chip, then utilize the method for isotropic etch, the square column array is corroded into the tip carefully, the four rib microtip arrays that root is thick, the method comprises the steps:
Step 101: select a silicon chip, this silicon chip is the silicon chip of twin polishing, and the thickness of silicon chip is determining the integral thickness of skin dry electrode.
Step 102: with the two sides thermal oxide layer of silicon dioxide layer 10 of silicon chip; the thickness of this silicon dioxide layer 10 is 100-500nm; this silicon dioxide layer 10 is as the protective layer that in step 104, two-dimentional square column array 30 (consulting Fig. 2) corrosion is come to a point and attenuates, and protects the corrosion that is not corroded of the silicon at the top end face of two-dimentional square column array 30 and silicon chip 20 back sides.The thickness of silicon dioxide layer 10 all can reach the protection effect in the 100-500nm scope.
Step 103: silicon chip is formed respectively the vertical paddle-tumble of a periodic desired depth in directions X and Y-direction, form two-dimentional square column array 30 (consulting Fig. 2), this silicon chip is 150-300 μ m in the degree of depth of directions X and Y-direction paddle-tumble, width is 0.1-0.2mm, and this silicon chip is 150-500 μ m in the cycle of directions X and Y-direction paddle-tumble.In two dimension square column array 30, the size dimension size of square column was determined by paddle-tumble width and paddle-tumble cycle, the length of side of square column=paddle-tumble cycle-paddle-tumble width.The degree of depth of paddle-tumble determines the height of the last two-dimentional square column array 30 that forms, and this height will be pricked into skin surface, causes pain but can not prick skin corium.So concrete height will be according to deciding at skin surface use location upper surface skin thickness.
Step 104: the silicon chip with the isotropic etch liquid of silicon after to scribing carries out static corrosion, and with two-dimentional square column battle array 30 row come to a point (the consulting Fig. 3) that attenuate, the isotropic etch liquid of described silicon is Fluohydric acid.: the corrosive liquid of nitric acid=3: 25.Static corrosion can make the square column top corrosion in two-dimensional square post array 30 fast, and the bottom corrosion is slow, thereby forms the most advanced and sophisticated square column array 31 of band.
Step 105: with Fluohydric acid. or HF buffer, that silicon dioxide layer 10 corrosion at silicon chip 20 back sides are clean, form the electrode column array.In time and the step 102 of corrosion, the thickness of the silicon dioxide layer of thermal oxide formation is directly related, and the thicker etching time of silicon dioxide layer 10 is longer.
Step 106: adopt the method for magnetron sputtering, at band most advanced and sophisticated square column array 31 surfaces and back spatter metal.The mode of magnetron sputtering can guarantee with metal in most advanced and sophisticated square column array 31 sidewall sputters.Conducting of square column array 31 surfaces that band is most advanced and sophisticated and silicon chip 20 back sides is metal realization by electrode surrounding sidewall.Wherein the metal of the described sputter of step F comprises, a titanium layer, and at the surface sputtering layer of gold of this titanium layer, the titanium layer thickness of this sputter is 50-100nm, the thickness of the gold layer of this sputter is 200-500nm, completes making.
Embodiment
See also Fig. 1, coordinate and consult shown in Fig. 2,3, the invention provides a kind of making based on the method for microneedle array skin dry electrode, comprise the steps:
The method is utilized general emery wheel scribing equipment, and paddle-tumble on monocrystalline silicon piece forms the two-dimentional silicon square column array that root still is connected with silicon chip, then utilizes the method for isotropic etch, the square column array is corroded into the tip carefully, the four rib microtip arrays that root is thick.
Step 101: select the one 4 cun 500 thick silicon chip of μ m, this silicon chip is the silicon chip of twin polishing;
Step 102: with the two sides thermal oxide layer of silicon dioxide layer 10 of silicon chip, the thickness of this silicon dioxide layer 10 is 200nm;
Step 103: silicon chip is formed respectively the vertical paddle-tumble of a periodic desired depth in directions X and Y-direction, form two-dimentional square column array 30 (consulting Fig. 2), this silicon chip is 200 μ m in the degree of depth of directions X and Y-direction paddle-tumble, width is 0.15mm, and this silicon chip is 200 μ m in the cycle of directions X and Y-direction paddle-tumble.The square column length of side in two dimension square column array 30 is 50 μ m;
Step 104: the silicon chip with the isotropic etch liquid of silicon after to scribing carries out static corrosion, and with two-dimentional square column array 30 come to a point (the consulting Fig. 3) that attenuate, the isotropic etch liquid of described silicon is Fluohydric acid.: the corrosive liquid of nitric acid=3: 25;
Step 105: with Fluohydric acid. or HF buffer, that silicon dioxide layer 10 corrosion at silicon chip 20 back sides are clean, corrode 5 minutes, form the square column array 31 at band tip;
Step 106: the method that adopts magnetron sputtering, at band most advanced and sophisticated square column array 31 surfaces and silicon chip 20 back spatter metals, wherein the metal of the described sputter of step F comprises, one titanium layer, surface sputtering layer of gold at this titanium layer, the titanium layer thickness of this sputter is 100nm, and the thickness of the gold layer of this sputter is 500nm, completes making.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (9)

1. a making is based on the method for microneedle array skin dry electrode, the method is utilized general emery wheel scribing equipment, paddle-tumble on monocrystalline silicon piece, form the two-dimentional silicon square column array that root still is connected with silicon chip, then utilize the method for isotropic etch, the square column array is corroded into the tip carefully, the four rib microtip arrays that root is thick, the method comprises the steps:
A, selection one silicon chip;
B, with the two sides thermal oxide layer of silicon dioxide layer of silicon chip;
C, silicon chip is formed respectively the vertical paddle-tumble of a periodic desired depth in directions X and Y-direction, form two-dimentional square column array;
D, the silicon chip with the isotropic etch liquid of silicon after to scribing carry out static corrosion, and two-dimentional square column array is attenuated to come to a point;
E, the silicon dioxide layer corrosion of silicon chip surface is clean with Fluohydric acid. or HF buffer forms the electrode column array;
The method of F, employing magnetron sputtering at electrode column array surface and back spatter metal, is completed making.
2. making according to claim 1 is based on the method for microneedle array skin dry electrode, and wherein this silicon chip is the silicon chip of twin polishing.
3. making according to claim 1 is based on the method for microneedle array skin dry electrode, and wherein the thickness of silicon dioxide layer is 100-500nm.
4. making according to claim 1 is based on the method for microneedle array skin dry electrode, and wherein the metal of the described sputter of step F comprises, a titanium layer is at the surface sputtering layer of gold of this titanium layer.
5. making according to claim 4 is based on the method for microneedle array skin dry electrode, and wherein the titanium layer thickness of sputter is 50-100nm.
6. making according to claim 4 is based on the method for microneedle array skin dry electrode, and wherein the thickness of the gold layer of sputter is 200-500nm.
7. making according to claim 1 is based on the method for microneedle array skin dry electrode, and wherein this silicon chip is 150-300 μ m in the degree of depth of directions X and Y-direction paddle-tumble, and width is 0.1-0.2mm.
8. making according to claim 7 is based on the method for microneedle array skin dry electrode, and wherein this silicon chip is 150-500 μ m in the cycle of directions X and Y-direction paddle-tumble.
9. making according to claim 1 is based on the method for microneedle array skin dry electrode, and wherein the isotropic etch liquid of silicon is Fluohydric acid.: the corrosive liquid of nitric acid=3: 25.
CN2012105497914A 2012-12-17 2012-12-17 Manufacture method microneedle array-based skin dry electrode Pending CN102988039A (en)

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Cited By (10)

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CN103767703A (en) * 2014-03-04 2014-05-07 上海海事大学 Portable wireless electroencephalogram data real-time acquisition system and running method thereof
CN104140075A (en) * 2014-07-15 2014-11-12 中国科学院半导体研究所 Method for manufacturing hard microneedle array on surface of flexible substrate
CN104523273A (en) * 2014-10-27 2015-04-22 中国科学院半导体研究所 Muscle impedance handheld electrode based on microneedle arrays and preparation method
CN105615874A (en) * 2016-03-01 2016-06-01 中国科学院半导体研究所 Flexible electrocardio-electrode for dynamic electrocardiograph measurement and manufacturing method of flexible electrocardio-electrode for dynamic electrocardiograph measurement
CN105769182A (en) * 2016-02-22 2016-07-20 武汉智普天创科技有限公司 Electroencephalogram signal wireless collecting system
CN106808162A (en) * 2017-02-21 2017-06-09 中山大学 A kind of microneedle array electrode and preparation method thereof
CN108154968A (en) * 2017-12-28 2018-06-12 中建材蚌埠玻璃工业设计研究院有限公司 A kind of electronic information shows the preparation method with metal nano network flexible panel
CN108179392A (en) * 2017-12-28 2018-06-19 中建材蚌埠玻璃工业设计研究院有限公司 A kind of processing method of metal nano network flexible glass
CN110432893A (en) * 2019-08-06 2019-11-12 苏州米特希赛尔人工智能有限公司 3 Lead ambulatory electrocardiogram monitoring device of back belt type
CN114589466A (en) * 2022-03-22 2022-06-07 中山大学 Method for preparing three-dimensional microneedle blood glucose electrode based on dimensionality reduction screen printing

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Publication number Priority date Publication date Assignee Title
CN103767703A (en) * 2014-03-04 2014-05-07 上海海事大学 Portable wireless electroencephalogram data real-time acquisition system and running method thereof
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CN105615874A (en) * 2016-03-01 2016-06-01 中国科学院半导体研究所 Flexible electrocardio-electrode for dynamic electrocardiograph measurement and manufacturing method of flexible electrocardio-electrode for dynamic electrocardiograph measurement
CN106808162A (en) * 2017-02-21 2017-06-09 中山大学 A kind of microneedle array electrode and preparation method thereof
CN108154968A (en) * 2017-12-28 2018-06-12 中建材蚌埠玻璃工业设计研究院有限公司 A kind of electronic information shows the preparation method with metal nano network flexible panel
CN108179392A (en) * 2017-12-28 2018-06-19 中建材蚌埠玻璃工业设计研究院有限公司 A kind of processing method of metal nano network flexible glass
CN108179392B (en) * 2017-12-28 2019-08-23 中建材蚌埠玻璃工业设计研究院有限公司 A kind of processing method of metal nano network flexible glass
CN108154968B (en) * 2017-12-28 2019-08-23 中建材蚌埠玻璃工业设计研究院有限公司 A kind of electronic information shows the preparation method with metal nano network flexible panel
CN110432893A (en) * 2019-08-06 2019-11-12 苏州米特希赛尔人工智能有限公司 3 Lead ambulatory electrocardiogram monitoring device of back belt type
CN114589466A (en) * 2022-03-22 2022-06-07 中山大学 Method for preparing three-dimensional microneedle blood glucose electrode based on dimensionality reduction screen printing
CN114589466B (en) * 2022-03-22 2023-08-15 中山大学 Method for preparing three-dimensional microneedle blood sugar electrode based on dimension reduction screen printing

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Application publication date: 20130327