CN102986006B - Use and cut based on the laser of femtosecond and the wafer of plasma etching - Google Patents
Use and cut based on the laser of femtosecond and the wafer of plasma etching Download PDFInfo
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- CN102986006B CN102986006B CN201180021218.XA CN201180021218A CN102986006B CN 102986006 B CN102986006 B CN 102986006B CN 201180021218 A CN201180021218 A CN 201180021218A CN 102986006 B CN102986006 B CN 102986006B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- Manufacturing & Machinery (AREA)
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- Analytical Chemistry (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention describes the method for cutting semiconductor wafer, and wherein each wafer has multiple integrated circuit.One method comprises the following steps: on described semiconductor crystal wafer, form mask.Described mask is by covering and protecting the layer of described integrated circuit to form.By the laser scribe process based on femtosecond by described mask patterning, to provide a patterned mask with gap.Described patterning exposes the region of the described semiconductor crystal wafer between described integrated circuit to the open air.Then through semiconductor crystal wafer described in the described etching gaps in described patterned mask, with single point of described integrated circuit.
Description
The cross reference of related application
Subject application advocates the U.S. Provisional Application case the 61/357th that on June 22nd, 2010 files an application, and the rights and interests of No. 468, the full content of described application is incorporated herein by reference.
Background
1) field
Embodiments of the invention, about semiconductor processes field, specifically about the method for cutting semiconductor wafer, wherein each wafer have multiple integrated circuit.
2) description of related art
In semiconductor crystal wafer process, the wafer (being also referred to as substrate) be made up of silicon or other semi-conducting materials forms integrated circuit.Usually, utilize semiconductor, conduction or insulation different material layer to form integrated circuit.Various processes well known is used to adulterate, deposit and etch these materials, to form integrated circuit.Process each wafer to form a large amount of individual regions containing integrated circuit, described individual regions is called tube core.
After integrated circuit formation process, " cutting " wafer, so that individual dice is separate, uses with non-packing forms for encapsulation or in larger circuit.Two kinds of major techniques for wafer cutting are line and sawing.By line, cross crystal column surface along preformed scribing line and move diamond point scriber.These scribing lines extend along the interval between tube core.These intervals are commonly referred to as " Cutting Road (street) ".Diamond scriber forms shallow cut along Cutting Road in crystal column surface.After such as applying pressure with roller bearing, wafer along described scribing line separately.The lattice structure of wafer substrate is followed in wafer fracture.Line can be used for thickness about 10 mil (mil) or less wafer.For thicker wafer, current sawing is the preferred approach for cutting.
By sawing, the diamond point saw contact crystal column surface rotated with high revolution per minute, and along Cutting Road sawing wafer.Wafer is arranged on the supporting member of the adhesive film such as stretched on film framework and so on, and saw puts on perpendicular cuts road and horizontal resection road repeatedly.Line or a problem of sawing are: chip and dig wound can along the described cut-out edge formation waiting tube core.In addition, crackle can be formed and from the edge-diffusion of described tube core to substrate, and causes integrated circuit not work.To peel off and cracking is in particular the problem of line, because square or rectangle tube core only can be rule along the <110> direction of crystalline texture side.Therefore, the generation one zigzag separator bar that splits of described tube core opposite side.Owing to peeling off and cracking, therefore need additional space between tube core on wafer, in case stop loss bad integrated circuit, such as, chip and crackle are maintained and actual integrated circuit a distance.Due to space requirement, cause the tube core that can not form as much on a standard size wafer, and waste the wafer space (realestate) that originally can be used for circuit.The use of saw increases the weight of the waste in space on semiconductor crystal wafer.Saw sword about 15 micron thickness.Therefore, for the crackle around the otch that guarantee is caused by saw and other damages do not damage integrated circuit, usually must by the Circuit Separation 300 microns to 500 microns of each described tube core.In addition, after dicing, each tube core needs substantive clean, to remove the particulate and other pollutants that are produced by Sawing Process.
Which also use plasma-torch cutting, but plasma-torch cutting can have limitation equally.For example, cost can be the limitation hindering and implement plasma-torch cutting.Standard lithography operations for patterning resist can cause implementation cost too high.May hinder and implement another of plasma-torch cutting and be limited as, production problem or production restriction can caused along the plasma treatment of the common metal (such as copper) in Cutting Road cutting.
Summary of the invention
Embodiments of the invention comprise the method for cutting semiconductor wafer, wherein each wafer have multiple integrated circuit.
In one embodiment, a kind of method that cutting has the semiconductor crystal wafer of multiple integrated circuit comprises the following steps: above described semiconductor crystal wafer, form a mask, and described mask is by covering and protecting the layer of described integrated circuit to form.Then by the laser scribe process based on femtosecond by described mask patterning, to provide the patterned mask with gap, thus expose the region of the described semiconductor crystal wafer between described integrated circuit to the open air.Then through semiconductor crystal wafer described in the described etching gaps in described patterned mask, with integrated circuit described in singualtion.
In another embodiment, a kind of system for cutting semiconductor wafer comprises factor interface.Laser scribing device is coupled with described factor interface, and comprises the laser based on femtosecond.Plasma etch chamber is also coupled with described factor interface.
In another embodiment, a kind of method that cutting has a semiconductor crystal wafer of multiple integrated circuit comprises the following steps: square one-tenth polymeric layer on a silicon substrate.Described polymeric layer covers and protects the integrated circuit be placed on described silicon substrate.Described integrated circuit is made up of the silicon dioxide layer be placed in above low dielectric constant material layer and layers of copper.By the laser scribe process based on femtosecond by described polymeric layer, described silicon dioxide layer, described low dielectric constant material layer and described layers of copper patterning, to expose the region of the described silicon substrate between described integrated circuit to the open air.Then through silicon substrate described in etching gaps, with integrated circuit described in singualtion.
Accompanying drawing explanation
The vertical view of the semiconductor crystal wafer that Fig. 1 diagram is to be cut according to an embodiment of the invention.
The vertical view of the semiconductor crystal wafer that Fig. 2 diagram is to be cut according to an embodiment of the invention, described semiconductor crystal wafer is formed with cutting mask.
Fig. 3 is the flow chart of the operation of the method that cutting semiconductor wafer is according to an embodiment of the invention shown, described semiconductor crystal wafer comprises multiple integrated circuit.
Fig. 4 A illustrates the cross-sectional view comprising the semiconductor crystal wafer of multiple integrated circuit according to an embodiment of the invention during the method performing the described semiconductor crystal wafer of cutting, and described cross-sectional view corresponds to the operation 302 of the flow chart of Fig. 3.
Fig. 4 B illustrates the cross-sectional view comprising the semiconductor crystal wafer of multiple integrated circuit according to an embodiment of the invention during the method performing the described semiconductor crystal wafer of cutting, and described cross-sectional view corresponds to the operation 304 of the flow chart of Fig. 3.
Fig. 4 C illustrates the cross-sectional view comprising the semiconductor crystal wafer of multiple integrated circuit according to an embodiment of the invention during the method performing the described semiconductor crystal wafer of cutting, and described cross-sectional view corresponds to the operation 306 of the flow chart of Fig. 3.
The effect that Fig. 5 diagram uses the laser pulse within the scope of femtosecond to compare with compared with the long pulse time according to an embodiment of the invention.
Fig. 6 diagram can be used for the cross-sectional view stacked of the material in the Cutting Road region of semiconductor crystal wafer or substrate according to an embodiment of the invention.
Fig. 7 comprises silicon metal (c-Si), copper (Cu), crystalline silica (c-SiO according to an embodiment of the invention
2) and amorphous silica (a-SiO
2) the curve chart that changes along with photon energy of absorption coefficient.
Fig. 8 is equation, and described equation shows the laser intensity of given laser and the functional relation of pulsed laser energy, laser pulse width and laser beam radius.
Fig. 9 A to Fig. 9 D illustrates the cross-sectional view of the different operating of the method for cutting semiconductor wafer according to an embodiment of the invention.
Figure 10 diagram is according to an embodiment of the invention by using and conventional tight effect of cut on semiconductor crystal wafer that narrow Cutting Road reaches, and described conventional cutting can be limited to minimum widith.
Figure 11 diagram allows more tightly packed according to an embodiment of the invention and therefore allows the free form integrated circuit of the more tube core of every wafer to arrange compared with grid alignment methods.
Figure 12 illustrates the block diagram according to an embodiment of the invention for wafer or the laser of substrate and the facility layout of plasma-torch cutting.
Figure 13 illustrates the block diagram of exemplary computer system according to an embodiment of the invention.
Embodiment
Describe the method for cutting semiconductor wafer, wherein each wafer has multiple integrated circuit.Set forth numerous specific detail in the following description, such as based on the laser scribing of femtosecond and plasma etch conditions and material situation, to provide the thorough understanding to embodiments of the invention.To it will be evident to one of ordinary skill in the art that embodiments of the invention can when implementing without when these specific detail.In other instances, the known aspect of such as IC manufacturing is not described further, in order to avoid unnecessarily make embodiments of the invention indigestion.In addition, should be understood that the various embodiments shown in accompanying drawing are illustrative expression, and may not draw in proportion.
The mixing wafer or the substrate cutting technique that relate to initial laser line and follow-up plasma etching can be implemented, for tube core singualtion.Laser scribe process can be used for removing mask layer, organic and inorganic dielectric layer and device layer.Then can exposing to the open air or stop described laser etch process after partially-etched wafer or substrate.Then the plasma etching part of cutting technique can be used to be etched through the wafer of bulk or substrate (such as through bulk monocrystalline silicon), to produce tube core or chip singualtion or cutting.
Conventional wafer cutting method comprise based on pure machinery be separated diamond sawing, initial laser line and follow-up diamond saw cutting nanosecond or picosecond laser cutting.For the thin wafer of the bulk silicon singualtion and so on of such as 50 micron thickness or substrate singualtion, described conventional method only produces bad technological quality.Can comprise from some challenges that may face when thin wafer or substrate singualtion tube core: form fine fisssure or layering, the peeling off of inorganic dielectric layer between the different layers, keep strict saw kerf width control system or excise severity control accurately.Embodiments of the invention comprise hybrid laser line and plasma etching tube core singualtion method, and described method is applicable to that to overcome in above-mentioned challenge one or more.
According to embodiments of the invention, be used for based on the laser scribing of femtosecond and the combination of plasma etching integrated circuit semiconductor crystal wafer being cut into individuation or singualtion.In one embodiment, non-thermal process that the laser scribing based on femtosecond is used as substantially (if not completely).For example, the described laser scribing based on femtosecond can be positioned the region maybe can ignoring cause thermal damage without cause thermal damage.In an embodiment, the method for this paper is for having the integrated circuit through singualtion of super low dielectric constant film.By routine cutting, saw may be needed to slow down to adapt to this type of low dielectric constant films.In addition, now usually before being cut that semiconductor crystal wafer is thinning.Therefore, in an embodiment, now common mask patterning to be combined with using to rule based on the part wafer of the laser of femtosecond, and succeeded by plasma etch process.In one embodiment, the needs of the lithographic patterning operation to photoresist layer can be got rid of by laser direct writing system, and cost that can be extremely low is implemented.In one embodiment, use through hole type silicon to be etched in plasma etch conditions and complete described cutting technique.
Therefore, in of the present invention, the integrated circuit based on the laser scribing of femtosecond and the combination of plasma etching, semiconductor crystal wafer being cut into singualtion can be used.The vertical view of the semiconductor crystal wafer that Fig. 1 diagram is to be cut according to an embodiment of the invention.The vertical view of the semiconductor crystal wafer that Fig. 2 diagram is to be cut according to an embodiment of the invention, described semiconductor crystal wafer is formed with cutting mask.
Referring to Fig. 1, semiconductor crystal wafer 100 has the multiple regions 102 comprising integrated circuit.Region 102 is separated by perpendicular cuts road 104 and horizontal resection road 106.Cutting Road 104 and Cutting Road 106 are not containing the region of semiconductor crystal wafer of integrated circuit, and Cutting Road 104 and Cutting Road 106 are designed to cutting crystal wafer along position.Some embodiments of the present invention relate to utilization based on the laser scribing of femtosecond and the combination of plasma etch techniques, to cut raceway groove along described Cutting Road through semiconductor crystal wafer, are divided into individual chip or tube core to make described tube core.Because laser scribing and plasma etch process neither depend on crystalline texture orientation, so the crystalline texture of semiconductor crystal wafer to be cut is unimportant through the vertical-channel of described wafer to realization.
Referring to Fig. 2, semiconductor crystal wafer 100 has the mask 200 be deposited on semiconductor crystal wafer 100.In one embodiment, described mask in a usual manner through deposition, to realize the layer of about 4-10 micron thickness.With a part of patterning of laser scribe process by mask 200 and semiconductor crystal wafer 100, to define the position (such as gap 202 and 204) at cutting semiconductor wafer 100 place along Cutting Road 104 and Cutting Road 106.The integrated circuit region of semiconductor crystal wafer 100 is covered by mask 200 and protects.The region 206 of mask 200 is through location to make during subsequent etching processes, and integrated circuit is not demoted by described etch process.Between region 206, form horizontal clearance 204 and down suction 202, be etched with the region of final cutting semiconductor wafer 100 to define by during etch process.
Fig. 3 is the flow chart 300 of the operation of the method representing cutting semiconductor wafer according to an embodiment of the invention, and described semiconductor crystal wafer comprises multiple integrated circuit.Fig. 4 A to Fig. 4 C illustrates according to the cross-sectional view that comprise the semiconductor crystal wafer of multiple integrated circuit of embodiments of the invention during the method performing the described semiconductor crystal wafer of cutting, and described cross-sectional view corresponds to the operation of flow chart 300.
Referring to operation 302 and corresponding Fig. 4 A of flow chart 300, mask 402 is formed at above semiconductor crystal wafer or substrate 404.Mask 402 is by cover and the layer of Protective IC 406 forms, and integrated circuit 406 is formed on the surface of semiconductor crystal wafer 404.Mask 402 also covers gets involved Cutting Road 407, gets involved Cutting Road 407 and is formed between each in integrated circuit 406.
According to embodiments of the invention, form mask 402 and comprise: the layer forming such as (but not limited to) photoresist layer or self-mating system (I-line) patterned layer and so on.For example, the polymeric layer of such as photoresist layer and so on can be made up of the material being applicable to photoetching process in addition.In one embodiment, described photoresist layer is made up of positive photoresist, such as (but not limited to) 248 nanometers (nm) resist, 193nm resist, 157nm resist, extreme ultraviolet line (extremeultra-violet; EUV) resist or the phenol resin medium containing diazo naphthoquinones sensitizer.In another embodiment, described photoresist layer forms by bearing photoresist, such as (but not limited to) poly-along isoprene and poly-cinnamic acid vinyl acetate.
In an embodiment, semiconductor crystal wafer or substrate 404 are made up of the material being suitable for standing manufacturing process, and can by the proper arrangement of semiconductor processes layer on described material.For example, in one embodiment, semiconductor crystal wafer or substrate 404 are made up of the material based on IV race, such as (but not limited to) silicon metal, germanium or silicon/germanium.In a particular embodiment, semiconductor crystal wafer 404 is provided to comprise: to provide monocrystalline substrate.In a particular embodiment, described monocrystalline substrate is doped with foreign atom.In another embodiment, semiconductor crystal wafer or substrate 404 are made up of III-V material, such as light-emitting diode (lightemittingdiode; The III-V material substrate of manufacture LED).
In an embodiment, semiconductor crystal wafer or substrate 404 have the array of the semiconductor device being placed on semiconductor crystal wafer or substrate 404 or in semiconductor crystal wafer or substrate 404, and described semiconductor device is as a part for integrated circuit 406.The example of this type of semiconductor device includes, but is not limited to: manufacture in a silicon substrate and the storage component part be packaged in dielectric layer or complementary metal oxide semiconductors (CMOS) (complimentarymetal-oxide-semiconductor; CMOS) transistor.Can be formed multiple metal interconnected above described device or transistor and in surrounding dielectric layer, and describedly metal interconnectedly can be used for device described in electrical couplings or transistor, to form integrated circuit 406.The material of composition Cutting Road 407 can be similar or identical with those materials for the formation of integrated circuit 406.For example, Cutting Road 407 can be made up of multilayer dielectric material, semi-conducting material and metallization.In one embodiment, the one or more test components comprising the practical devices being similar to integrated circuit 406 in Cutting Road 407.
Referring to operation 304 and corresponding Fig. 4 B of flow chart 300, by the laser scribe process based on femtosecond by mask 402 patterning, to provide the patterned mask 408 with gap 410, thus the region of the semiconductor crystal wafer exposed to the open air between integrated circuit 406 or substrate 404.Therefore, based on the laser scribe process of femtosecond for removing the material of the Cutting Road 407 be formed at first between integrated circuit 406.According to embodiments of the invention, by the laser scribe process based on femtosecond, mask 402 patterning is comprised: form the region that raceway groove 412 part enters the semiconductor crystal wafer 404 between integrated circuit 406, as shown in Figure 4 B.
In an embodiment, by laser scribe process, mask 408 patterning is comprised: the laser using the pulse duration had within the scope of femtosecond.Specifically, have and add ultraviolet (ultra-violet at visible spectrum; And infrared ray (infra-red UV); The laser of the wavelength IR) in scope (amount to wideband spectrum) can be used for providing the laser based on femtosecond, that is to have magnitude be femtosecond (10
-15second) the laser of pulse duration.In one embodiment, excision does not rely on or does not substantially rely on wavelength, and is therefore suitable for laminated film, the film of such as mask 402, the film of Cutting Road 407 and may the film of a part of semiconductor crystal wafer or substrate 404.
Fig. 5 diagram use according to an embodiment of the invention laser pulse within the scope of femtosecond and longer frequency ratio compared with effect.Referring to Fig. 5, compare (such as with comparatively long pulse width, produce to damage 502B and produce by nanosecond process through hole 500A by psec process through hole 500B and significantly damage 502A), use the laser of the pulse duration had within the scope of femtosecond to alleviate or eliminate cause thermal damage problem (such as, being minimized to without damaging 502C by femtosecond process through hole 500C).The elimination damaged during forming through hole 500C or alleviation are attributable to lack low-yield coupling again (laser ablation as seen in based on psec) or heat balance (laser ablation as seen in based on nanosecond), as shown in Figure 5.
Laser parameter selects (such as pulse duration) to can be the successful laser scribing of research and development and the key of cutting technique, and successful laser scribing and cutting technique will peel off, fine fisssure and layering reduce to minimum, to reach smooth laser scribing otch.Laser scribing otch is more smooth, then the etch process performed for final tube core singualtion is more smooth.In semiconductor device wafer, the functional layer of many different materials types (such as conductor, insulator, semiconductor) and thickness is placed on semiconductor element wafer usually.This type of material can include, but is not limited to the inorganic dielectric of the organic material of such as polymer and so on, metal or such as silicon dioxide and silicon nitride and so on.
The Cutting Road be placed between the individual integrated circuit on wafer or substrate can comprise the layer similar or identical with described integrated circuit itself.For example, Fig. 6 illustrates the cross-sectional view stacked of material according to an embodiment of the invention, and described material can be used in the Cutting Road region of semiconductor crystal wafer or substrate.
Referring to Fig. 6; Cutting Road region 600 comprises top section 602, first silicon dioxide layer 604, first etch stop layer 606, the first dielectric layer with low dielectric constant 608(of silicon substrate such as, has the dielectric constant of the dielectric constant 4.0 being less than silicon dioxide), the second etch stop layer 610, second dielectric layer with low dielectric constant 612, the 3rd etch stop layer 614, non-impurity-doped silex glass (undopedsilicaglass; USG) layer 616, second silicon dioxide layer 618 and photoresist layer 620, wherein depict relative thickness.Copper metallization 622 is placed between the first etch stop layer 606 and the 3rd etch stop layer 614, and through the second etch stop layer 610.In a particular embodiment, the first etch stop layer 606, second etch stop layer 610 and the 3rd etch stop layer 614 are made up of silicon nitride, and dielectric layer with low dielectric constant 608 and 612 is made up of carbon doped silicon oxide material.
Irradiate under (such as irradiating based on nanosecond or based on the laser of psec) at conventional laser, the material of Cutting Road 600 light absorption and excise machine-processed in performance quite difference.For example, the dielectric layer of such as silicon dioxide and so on is substantially transparent to all commercially available optical maser wavelength under normal circumstances.On the contrary, metal, organic substance (such as advanced low-k materials) and silicon can coupling photons easily, especially irradiate in response to based on nanosecond or based on the laser of psec.For example, Fig. 7 comprises silicon metal (c-Si, 702), copper (Cu, 704), crystalline silica (c-SiO according to an embodiment of the invention
2, 706) and amorphous silica (a-SiO
2, 708) the curve chart 700 that changes along with photon energy of absorption coefficient.Fig. 8 is equation 800, and described equation shows the laser intensity of given laser and the functional relation of pulsed laser energy, laser pulse width and laser beam radius.
In an embodiment, utilize the curve chart 700 of equation 800 and absorption coefficient, the parameter of the technique based on femtosecond laser can be selected, to realize substantially common excision effect, although the general energy absorption characteristics of this type of material can differ widely under certain conditions to inorganic and organic dielectric, metal and semiconductor.For example, the absorptivity of silicon dioxide is nonlinear, and the absorptivity of silicon dioxide can be more consistent with the absorptivity of organic dielectric, semiconductor and metal under suitable laser ablation parameter.In this type of embodiment, the laser technology based on femtosecond of high strength and short pulse width is for excising stacking of layer, and it is one or more that the stacking of described layer comprises in silicon dioxide layer and organic dielectric, semiconductor or metal.In a particular embodiment, the pulse being about less than or equal to 400 femtoseconds for the laser beam processes based on femtosecond, to remove mask, Cutting Road and a part of silicon substrate.
On the contrary, if select non-optimal laser parameter, then relating in both or stacking structure more than both in inorganic dielectric, organic dielectric, semiconductor or metal, laser ablation process can cause lamination problem.For example, laser penetration high band gap energy dielectric (such as there is the silicon dioxide of about 9eV band gap), and can not absorption be measured.But described laser can be able to be absorbed in the metal level of below or silicon layer, thus causes the remarkable vaporization of described metal level or silicon layer.Described vaporization can produce high pressure, to rise the silicon dioxide dielectric layers covered, and may cause serious interlaminar delamination and micro-cracking.In one embodiment, although cause micro-cracking and layering based on the laser beam processes of psec in compound stacks, prove, the micro-cracking or layering that the laser beam processes based on femtosecond does not cause same material to stack.
In order to directly excise dielectric layer, dielectric material may need ionization occurs, and shows similar to make described dielectric material by strong absorb photons to electric conducting material.Described absorption can hinder most of laser energy to penetrate into silicon layer or the metal level of below before final excision dielectric layer.In one embodiment, when laser intensity is enough high so that cause photo ionization and knock-on ion in Inorganic Dielectric Material, the ionization of described inorganic dielectric is feasible.
According to one embodiment of the invention, the feature of the suitable laser technology based on femtosecond is: high peak intensities (irradiance), described high peak intensities causes nonlinear interaction usually in different materials.In this type of embodiment, femtosecond laser source has the pulse duration be similar in the scope of 10 femtosecond to 500 femtoseconds, but described pulse duration is better in the scope of 100 femtosecond to 400 femtoseconds.In one embodiment, femtosecond laser source has the wavelength be similar in the scope of 1570 nanometer to 200 nanometers, but described wavelength is better in the scope of 540 nanometer to 250 nanometers.In one embodiment, laser and respective optical system provide the focus be similar in the scope of 3 microns to 15 microns at working surface place, but described focus is better is similar in the scope of 5 microns to 10 microns.
Can be single mode (Gauss) at the spatial beam section at described working surface place or there is the section of top cap shaped.In one embodiment, lasing light emitter has the pulse recurrence rate be similar in 200kHz to 10MHz scope, but described pulse recurrence rate is better is similar in the scope of 500kHz to 5MHz.In one embodiment, lasing light emitter transmits the pulse energy be similar in the scope of 0.5uJ to 100uJ at working surface place, but described pulse energy is better is similar in the scope of 1uJ to 5uJ.In one embodiment, laser scribe process performs along surface of the work with the speed be similar in the scope of 500mm/sec to 5m/sec, but the better scope be similar at 600mm/sec to 2m/sec of described speed.
Line technique can only one way perform or many Cheng Zhihang, but in one embodiment, better 1 to 2 journey.In one embodiment, the depth of score of workpiece is similar in 5 microns to 50 microns dark scopes, is goodly similar in 10 microns to 20 microns dark scopes.Laser can put in a series of Sing plus by given pulse recurrence rate, or in a series of burst.In one embodiment, produce laser beam saw kerf width be similar in the scope of 2 microns to 15 microns, but the described saw kerf width measured at element/silicon interface place in Silicon Wafer line/cutting is better is similar in the scope of 6 microns to 10 microns.
The laser parameter with following benefit and advantage can be selected: such as provide sufficiently high laser intensity, to reach the ionization of inorganic dielectric (such as silicon dioxide), and the layering that causes will be damaged by bottom and cutting reduces to minimum before direct excision inorganic dielectric.Again, available parameter, to be provided for the significant process yields of commercial Application by the excision width (such as saw kerf width) accurately controlled and the degree of depth.As mentioned above, with based on psec and based on nanosecond laser ablation process compared with, the laser based on femtosecond is more suitable for far away providing this type of advantage.But even if in the spectrum of the laser ablation based on femtosecond, some wavelength also can provide the performance better compared with other wavelength.For example, in one embodiment, with have closer to infra-red range or the wavelength in infra-red range based on femtosecond laser technology compared with, the laser technology based on femtosecond had closer to ultraviolet ray range or the wavelength in ultraviolet ray range provides more smooth excision technique.In this type of embodiment specific, the laser technology based on femtosecond being suitable for semiconductor crystal wafer or substrate scribes is the laser based on having the wavelength being about less than or equal to 540 nanometers.In this type of embodiment specific, use the laser being about less than or equal to the pulse of 400 femtoseconds, described laser has the wavelength being about less than or equal to 540 nanometers.But, in alternative embodiments, use double excitation wavelength (such as, the combination of infrared laser and ultraviolet laser).
Referring to operation 306 and corresponding Fig. 4 C of flow chart 300, semiconductor crystal wafer 404 is etched, with singualtion integrated circuit 406 through the gap 410 in patterned mask 408.According to one embodiment of the invention, etching semiconductor wafer 404 comprises: etch the raceway groove 412 formed by the laser scribe process based on femtosecond, to be finally etched through semiconductor crystal wafer 404 completely, as shown in Figure 4 C.
In one embodiment, etching semiconductor wafer 404 comprises: use plasma etch process.In one embodiment, silicon through hole (through-silicon-via) type etch process is used.For example, in a specific embodiment, the etching speed of the material of semiconductor crystal wafer 404 is greater than 25 [mu.Super-high density plasma source can be used for the plasma etching part of tube core singularization process.The example being suitable for the treatment chamber performing this type of plasma etch process is can purchased from the Applied in Applied Materials (California, USA Sani Wei Er city)
silvia
tMetch system.Applied
silvia
tMetch system in combination capacitive character and induction radio frequency (radiofrequency; RF) be coupled, with only capacitive couplings even magnetic enhancement institute provide compared with possible the situation of improvement, capacitive character RF-coupledly gives ion concentration and the more independence of ion energy controls with responding to.This combination enables the decoupling effectively of ion concentration and ion energy, even if also can realize the relatively highdensity plasma without harmful high direct current (DC) bias level of possibility under the low-pressure of pole.This measure produces abnormal wide process window.But can use can any plasma etch chamber of etching silicon.In one exemplary embodiment, deep silicon etch is used for the etch rate etch monocrystalline substrate of conventional silicon etch speed being greater than about 40% or wafer 404, maintains basic accurate profile control and in fact without fan-shaped sidewall simultaneously.In a specific embodiment, silicon through hole type etch process is used.Described etch process is the plasma produced based on reactant gas, and described reactant gas is generally fluorine base gas, such as SF
6, C
4f
8, CHF
3, XeF
2, or can with any other reactant gas of relatively very fast etch rate etch silicon.In one embodiment, after singularization process, mask layer 408 is removed, as shown in Figure 4 C.
Therefore, again referring to flow chart 300 and Fig. 4 A to Fig. 4 C, mask layer can be cut through by initial laser, through wafer Cutting Road (comprising metallization) and part enter silicon substrate and perform wafer cutting.Described laser pulse width can be selected within the scope of femtosecond.Then tube core singualtion can deeply have been etched by follow-up silicon plasma of wearing.According to one embodiment of the invention, hereafter composition graphs 9A to Fig. 9 D describes the particular example stacked for the material cut.
Referring to Fig. 9 A, stack for the material that hybrid laser is excised and plasma etching cuts and comprise mask layer 902, device layer 904 and substrate 906.Mask layer, device layer and substrate are placed in above tube core adhesive-film 908, and tube core adhesive-film 908 is attached to lining band 910.In one embodiment, mask layer 902 is photoresist layer, such as above in conjunction with the photoresist layer described in mask 402.Device layer 904 comprises the inorganic dielectric layer (such as silicon dioxide) being placed in one or more metal level (such as layers of copper) and one or more dielectric layer with low dielectric constant (such as carbon-doped oxide layer) top.Element layer 904 also comprises the Cutting Road be arranged between integrated circuit, and described Cutting Road comprises the same or analogous layer with integrated circuit.Substrate 906 is bulky single crystal silicon substrate.
In one embodiment, before bulky single crystal silicon substrate 906 is attached to tube core adhesive-film 908, make bulky single crystal silicon substrate 906 thinning from dorsal part.Described thinning step can be performed by dorsal part grinding technics.In one embodiment, bulky single crystal silicon substrate 906 is made to be thinned to the thickness be similar in 50-100 micrometer range.In one embodiment, be important to note that, performed described thinning before laser ablation and plasma etching cutting technique.In one embodiment, photoresist layer 902 has the thickness of about 5 microns, and device layer 904 has the thickness be similar in 2-3 micrometer range.In one embodiment, thinning or thin wafer or substrate maybe can be engaged to any suitable substitute of lining band 910 by tube core adhesive-film 908() there is the thickness of about 20 microns.
Referring to Fig. 9 B, by the laser scribe process 912 based on femtosecond by mask 902, device layer 904 and a part of substrate 906 patterning, to form raceway groove 914 in substrate 906.Referring to Fig. 9 C, wear the dark etch process 916 of silicon plasma for raceway groove 914 is extended downward tube core adhesive-film 908, thus expose the top section of tube core adhesive-film 908 to the open air and singualtion silicon substrate 906.During wearing the dark etch process 916 of silicon plasma, by photoresist layer 902 protection device layer 904.
Referring to Fig. 9 D, singularization process can comprise further: by tube core adhesive-film 908 patterning, thus exposes the top section of lining band 910 to the open air and singualtion tube core adhesive-film 908.In one embodiment, by laser technology or by etch process singualtion tube core adhesive-film.Other embodiments can comprise: the part (such as, as individual integrated circuit) removing the singualtion of substrate 906 subsequently from lining band 910.In one embodiment, the tube core adhesive-film 908 of singualtion is retained on the dorsal part of the part of the singualtion of substrate 906.Other embodiments can comprise: remove mask photoresist layer 902 from device layer 904.In an alternative em bodiment, when substrate 906 to about 50 microns is thin, laser ablation process 912 for thorough singualtion substrate 906, and without the need to using additional plasma technique.
In one embodiment, after singualtion tube core adhesive-film 908, mask photoresist layer 902 is removed from device layer 904.In one embodiment, the integrated circuit of singualtion is removed from lining band 910, for encapsulation.In this type of embodiment, the dorsal part that patterned tube core adhesive-film 908 is retained in each integrated circuit is included in final encapsulation.But, in another embodiment, during singularization process or after singularization process, remove patterned tube core adhesive-film 908.
Again referring to Fig. 4 A to Fig. 4 C, described multiple integrated circuit 406 can be separated by the Cutting Road 407 with about 10 microns or less width.Utilize the laser scribe method based on femtosecond, this can be made in the layout of integrated circuit closely to act on and be achieved, this measure is at least partly owing to tight laser profile control.For example, Figure 10 diagram is according to one embodiment of the invention, and by using and conventional tight effect of cut on semiconductor crystal wafer or substrate that narrow Cutting Road realizes, described conventional cutting can be limited to minimum widith.
Referring to Figure 10, narrow Cutting Road is cut (such as with conventional by use, about 10 microns or less width in layout 1002) realize on semiconductor crystal wafer tight effect, described routine cutting can be limited to minimum widith (such as, about 70 microns or larger width in layout 1000).Even if However, it should be understood that and can realize by the laser scribe process based on femtosecond in other respects, not always expect Cutting Road width to be reduced to be less than 10 microns.For example, some application may need the Cutting Road width of at least 40 microns, to manufacture virtual device or test component in the Cutting Road of separate integrated circuits.
Again referring to Fig. 4 A to Fig. 4 C, described multiple integrated circuit 406 can non-limiting layout placement on semiconductor crystal wafer or substrate 404.For example, Figure 11 illustrates the more closelypacked free form integrated circuit layout of permission.According to one embodiment of the invention, compared with grid alignment methods, describedly more tightly packedly provide every wafer more tube core.Referring to Figure 11, free form layout (the non-limiting layout on such as semiconductor crystal wafer or substrate 1102) allows more tightly packed, and therefore compare with grid alignment methods (the restricted layout such as, on semiconductor crystal wafer or substrate 1100) and allow the more tube core of every wafer.In one embodiment, the speed of laser ablation and plasma etching singulates technique and die size, layout or Cutting Road number irrelevant.
Single process tool can be configured to perform mixing based on the many or all operations in the laser ablation of femtosecond and plasma etching singulates technique.For example, Figure 12 diagram is used for the block diagram of wafer or the laser of substrate and the facility layout of plasma-torch cutting according to one embodiment of the invention.
Referring to Figure 12, process tool 1200 comprises factor interface (factoryinterface; FI) 1202, factor interface 1202 has the multiple loadlock rooms 1204 be coupled with factor interface 1202.Cluster tool 1206 is coupled with factor interface 1202.Cluster tool 1206 comprises one or more plasma etch chamber, such as plasma etch chamber 1208.Laser scribing device 1210 is also coupled to factor interface 1202.In one embodiment, the overall area coverage of process tool 1200 can be about 3500 millimeters of (3.5 meters) × about 3800 millimeter (3.8 meters), as shown in figure 12.
In one embodiment, laser scribing device 1210 holds the laser based on femtosecond.Laser based on femtosecond is suitable for the laser ablation part performing hybrid laser and etching singularization process, all laser ablation process described above.In one embodiment, also comprise movable platform in laser scribing device 1200, described movable platform is through arranging for making wafer or substrate (or carrier of wafer or substrate) move relative to the laser based on femtosecond.In a specific embodiment, the laser based on femtosecond is also movable.In one embodiment, the overall area coverage of laser scribing device 1210 can be about 2240 millimeters × about 1270 millimeters, as shown in figure 12.
In one embodiment, one or more plasma etch chamber 1208 through arranging for through the etching gaps wafer in patterned mask or substrate, with the multiple integrated circuit of singualtion.In this type of embodiment, one or more plasma etch chamber 1208 is through arranging to perform deep silicon etching process.In a specific embodiment, one or more plasma etch chamber 1208 is Applied
silvia
tMetch system, described system can purchased from Applied Materials (Sani Wei Er city, California, United States state).Described etching chamber particular design can be used for deep silicon etch, described deep silicon etch is for generation of the integrated circuit of the singualtion being placed on monocrystalline substrate or wafer or in monocrystalline substrate or wafer.In one embodiment, plasma etch chamber 1208 comprises high-density plasma source, to promote high silicon etching speed.In one embodiment, cluster tool 1206 part of process tool 1200 comprises the etching chamber more than, manufactures output be achieved to make the height of singualtion or cutting technique.
Factor interface 1202 can be suitable air port, and described air port is as with the interface between the outside manufacturing facility of laser scribing device 1210 and cluster tool 1206.Factor interface 1202 can comprise the robot with arm or blade, and described robot is used for wafer (or carrier of wafer) to be sent to cluster tool 1206 or laser scribing device 1210 or described both from storage element (such as open front formula wafer cassette).
Cluster tool 1206 can comprise other chambers being suitable for the function performed in singualtion method.For example, in one embodiment, cluster tool 1206 comprises deposition chambers 1212, to replace extra etching chamber.Deposition chambers 1212 can through arrange for before the laser scribing of wafer or substrate above the device layer of wafer or substrate deposition mas.In this type of embodiment, deposition chambers 1212 is suitable for depositing photoresist layer.In another embodiment, cluster tool 1206 comprises wet/dry station 1214, to replace extra etching chamber.Described wet/dry station can be suitable for clean residue and fragment, or for removing mask after the laser scribing and plasma etching singulates technique of substrate or wafer.In one embodiment, cluster tool 1206 also comprises the measuring station of the parts as process tool 1200.
Embodiments of the invention can be provided as computer program or software, described computer program or software can comprise machine-readable medium, described machine-readable medium stores instruction, and described instruction can be used for computer system (or other electronic components) programming to perform technique according to an embodiment of the invention.In one embodiment, described computer system is coupled with the process tool 1200 described in conjunction with Figure 12.Machine-readable medium comprises any mechanism of the information for storing or transmit the form read by machine (such as computer).For example, machine-readable (such as embodied on computer readable) medium comprises machine (such as computer) memory medium capable of reading (such as read-only memory (readonlymemory; ROM), random access memory (randomaccessmemory; RAM), disk storage medium, optical storage medium, flash memory device etc.), machine (such as computer) can read transmission medium (electrically, optics, acoustics or other transmitting signal forms (such as infrared signal, digital signal etc.)), etc.
Figure 13 diagram, with the diagrammatic representation of computer system 1300 machine that is exemplary form, can perform one group of instruction computer system 1300 in, and described instruction is for making any one or the many persons in machine execution methods described herein.In alternative embodiments, described machine can at local area network (LAN) (LocalAreaNetwork; LAN) (such as networking connection), is connected in intranet, extranet or internet to other machines.Described machine can be used as server or client machine work in client-sever network environment, or as peer machines work in equity (or distributing) network environment.Described machine can be personal computer (personalcomputer; PC), dull and stereotyped PC, Set Top Box (set-topbox; STB), personal digital assistant (PersonalDigitalAssistant; PDA), cellular phone, web equipment, server, network router, switch or bridger, maybe can perform any machine of one group of instruction of the action (order or other modes) of specifying described machine to take.In addition, although only illustrate individual machine, term " machine " also should be regarded as comprising individuality or jointly perform one group of (or many groups) instruction to perform any set of the machine (such as computer) of any one or many persons in methods described herein.
Exemplary computer system 1300 comprises the dynamic random access memory (dynamicrandomaccessmemory of processor 1302, main storage 1304(such as read-only memory (ROM), flash memory, such as synchronous dram (SDRAM) or RambusDRAM (RDRAM) and so on; DRAM) etc.), static memory 1306(such as flash memory, static RAM (staticrandomaccessmemory; SRAM) etc.) and additional storage 1318(such as data storage device), described equipment is via bus 1330 communication with one another.
Processor 1302 represents one or more general-purpose processing device, such as microprocessor, CPU etc.In more specific words it, processor 1302 can be sophisticated vocabulary calculate (complexinstructionsetcomputing; CISC) microprocessor, Jing Ke Cao Neng (reducedinstructionsetcomputing; RISC) microprocessor, very long instruction word collection (verylonginstructionword; VLIW) microprocessor, implement other instruction set processor or implement instruction set combination processor.Processor 1302 also can be one or more dedicated processes element, such as application-specific integrated circuit (ASIC) (applicationspecificintegratedcircuit; ASIC), field programmable gate array (fieldprogrammablegatearray; FPGA), digital signal processor (digitalsignalprocessor; DSP), network processing unit etc.Processor 1302 is through arranging with the processing logic 1326 performed for performing operation described herein.
Computer system 1300 can comprise network interface device 1308 further.Computer system 1300 also can comprise video display unit 1310(such as liquid crystal display (liquidcrystaldisplay; LCD), light-emitting diode (LED) display or cathode ray tube (cathoderaytube; CRT)), Alphanumeric Entry Device 1312(such as keyboard), cursor control device 1314(such as mouse) and signal generating apparatus 1316(such as loud speaker).
Additional storage 1318 can comprise machineaccessible storage medium (or more specifically, computer readable storage media) 1331, implement of any one or the many persons in methods described herein or function or organize instruction (such as software 1322) more and be stored on machineaccessible storage medium 1331.During computer system 1300 executive software 1322, software 1322 also can reside in main storage 1304 inside and/or processor 1302 inside completely or at least in part, and main storage 1304 and processor 1302 also form machine-readable storage medium.Can send on network 1320 via network interface device 1308 further or receive software 1322.
Although in the exemplary embodiment machineaccessible storage medium 1331 is illustrated as single medium, but term " machine-readable storage medium " should be regarded as comprising the single medium that stores one or more groups instruction or multiple medium (such as centralized or distributed data base, and/or the high-speed cache be associated and server).Term " machine-readable storage medium " also should be regarded as comprising and can to store or coding machine performs and makes machine perform in method of the present invention any medium of one group of instruction of any one or many persons.Therefore, term " machine-readable storage medium " should be regarded as including, but is not limited to solid-state memory and optics and magnetic medium.
According to embodiments of the invention, machineaccessible storage medium has the instruction be stored on machineaccessible storage medium, and described instruction makes data handling system perform the method for cutting and having the semiconductor crystal wafer of multiple integrated circuit.Described method is included in above semiconductor crystal wafer and forms mask, and described mask is by cover and one deck of Protective IC forms.Then by the laser scribe process based on femtosecond by described mask patterning, to provide the patterned mask with gap.Expose the region of described semiconductor crystal wafer between integrated circuits to the open air.Then through the etching gaps semiconductor crystal wafer in patterned mask, with singualtion integrated circuit.
Therefore, there is disclosed the method for cutting semiconductor wafer, wherein each wafer has multiple integrated circuit.According to one embodiment of the invention, the method that cutting has the semiconductor crystal wafer of multiple integrated circuit comprises the following steps: on described semiconductor crystal wafer, form mask, described mask is by covering and protecting one deck of described integrated circuit to form.Described method also comprises the following steps: by the laser scribe process based on femtosecond by described mask patterning, to provide the patterned mask with gap, thus exposes the region of the semiconductor crystal wafer between described integrated circuit to the open air.Described method also comprises the following steps: through semiconductor crystal wafer described in the etching gaps in patterned mask, with singualtion integrated circuit.In one embodiment, by the laser scribe process based on femtosecond, described mask patterning is comprised: in the region of the semiconductor crystal wafer between described integrated circuit, form raceway groove.In the described embodiment, etching semiconductor wafer comprises: etch the raceway groove formed by laser scribe process.
Claims (13)
1. cutting comprises a method for the semiconductor crystal wafer of multiple integrated circuit, said method comprising the steps of:
Described semiconductor crystal wafer forms mask, and described mask comprises covering and protects the layer of described integrated circuit;
By the laser scribe process based on femtosecond by described mask patterning, to provide the mask through laser scribing, described mask has multiple line, and each line has width, and described line exposes multiple regions of the described semiconductor crystal wafer between described integrated circuit to the open air; And
In described semiconductor crystal wafer, etch multiple raceway groove in plasma etching mode, with integrated circuit described in singualtion, each raceway groove has described width.
2. the method for claim 1, it is characterized in that, by the described laser scribe process based on femtosecond the step of described mask patterning is included in the described region of the described semiconductor crystal wafer between described integrated circuit and forms multiple raceway groove through laser grooving and scribing, and the step etching multiple raceway groove in plasma etching mode in described semiconductor crystal wafer comprises and extends described multiple raceway groove through laser grooving and scribing with integrated circuit described in singualtion.
3. the method for claim 1, it is characterized in that, by the described laser scribe process based on femtosecond, the step of described mask patterning is comprised use one laser, described laser has the wavelength being about less than or equal to 540 nanometers, and described laser has the laser pulse width being about less than or equal to 400 femtoseconds.
4. the method for claim 1, is characterized in that, described in plasma etching, the step of semiconductor crystal wafer comprises use high density plasma etch process.
5. the method for claim 1, is characterized in that, the step forming described mask comprises the following steps: form the layer selected from the group be made up of photoresist layer and self-mating system patterned layer.
6. the method for claim 1, is characterized in that, described multiple integrated circuit is separated by multiple Cutting Road, and described Cutting Road has about 10 microns or less width, and described width measures at device layer/substrate interface place.
7. the method for claim 1, is characterized in that, described multiple integrated circuit has non-limiting layout.
8. cutting comprises a method for the semiconductor crystal wafer of multiple integrated circuit, said method comprising the steps of:
Form polymer mask layer on a silicon substrate, described polymer mask layer covers and protects the multiple integrated circuits be placed on described silicon substrate, and described integrated circuit comprises silicon dioxide layer, and described silicon dioxide layer is placed in low dielectric constant material layer and layers of copper;
By the laser scribe process based on femtosecond by described polymer mask layer, described silicon dioxide layer, described low dielectric constant material layer and described layers of copper patterning, to provide the polymer mask through laser scribing, described polymer mask has multiple line, each line has width, and described line exposes multiple regions of the described semiconductor crystal wafer between described integrated circuit to the open air; And
In described semiconductor crystal wafer, etch multiple raceway groove in plasma etching mode, with integrated circuit described in singualtion, each raceway groove has described width.
9. method as claimed in claim 8, it is characterized in that, by the described laser scribe process based on femtosecond, the step of described silicon dioxide layer, described low dielectric constant material layer and described layers of copper patterning is comprised the following steps: before the described low dielectric constant material layer of excision and described layers of copper, excise described silicon dioxide layer.
10. method as claimed in claim 8, it is characterized in that, be included in further in the described region of the described silicon substrate between described integrated circuit by the step of the described laser scribe process patterning based on femtosecond and form multiple raceway groove through laser grooving and scribing, and the step wherein etching multiple raceway groove in plasma etching mode in described semiconductor crystal wafer comprises and extends described multiple raceway groove through laser grooving and scribing with integrated circuit described in singualtion.
11. methods as claimed in claim 8, it is characterized in that, comprise the following steps by the step of the described laser scribe process patterning based on femtosecond: use a laser, described laser has the wavelength being about less than or equal to 530 nanometers, and described laser has the laser pulse width being about less than or equal to 400 femtoseconds.
12. methods as claimed in claim 8, it is characterized in that, described in plasma etching, the step of silicon substrate comprises the following steps: use high density to wear silicon plasma etch process.
13. methods as claimed in claim 8, it is characterized in that, described integrated circuit is separated by multiple Cutting Road, and described Cutting Road has about 10 microns or less width.
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PCT/US2011/041126 WO2011163149A2 (en) | 2010-06-22 | 2011-06-20 | Wafer dicing using femtosecond-based laser and plasma etch |
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