CN102983147A - Light emitting diode chip and production method thereof - Google Patents
Light emitting diode chip and production method thereof Download PDFInfo
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- CN102983147A CN102983147A CN2012103581981A CN201210358198A CN102983147A CN 102983147 A CN102983147 A CN 102983147A CN 2012103581981 A CN2012103581981 A CN 2012103581981A CN 201210358198 A CN201210358198 A CN 201210358198A CN 102983147 A CN102983147 A CN 102983147A
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Abstract
The invention provides a light emitting diode chip and a production method of the light emitting diode chip. The light emitting diode chip and production method of the light emitting diode chip comprise a growing substrate. More than two light emitting diode units are formed on the growing substrate. Each two adjacent light emitting diode units are separated by a deep groove. Non-metal wires are coated on the deep grooves. Two adjacent light emitting diode units are connected in series or in parallel through the non-metal wires. Metal electrode bonding pad is formed on a light emitting diode unit which is on the outmost periphery of the light emitting diode chip. The non-metal wires are adopted by the light emitting diode chip as an interconnecting structure among the light emitting diode units. Compared with metal wires which are high in thickness and poor in light-admitting quality, the non-metal wires are better in light-admitting quality and relatively thinner. When the light emitting diode chip is driven by high pressure, failure of the chip caused by fusing at the corner of a step is not prone to occur. Effective bright dipping area is enlarged and stability of the light emitting diode chip is improved.
Description
Technical field
The present invention relates to a kind of LED chip construction and manufacture method, particularly a kind of light-emitting diode chip for backlight unit and manufacture method with light emitting diode.
Background technology
Along with the progress of technology and efficient, the application of light-emitting diode (LED) is more and more wider, and the upgrading of using along with LED, and market is for the need of LED. ask also towards more high-power and high brightness more---the future development of the high-capacity LED of common name namely.
For the design of high-capacity LED, each large factory adopts single low-voltage direct LED of large scale more at present, and single low-voltage direct LED of large scale extensively adopts two kinds of structures: a kind of is traditional horizontal structure, and another kind then is vertical conductive structure.
The processing procedure of the processing procedure of described horizontal structure and general small-size grains is almost identical, and particularly, the cross-section structure of horizontal structure and small-size grains is the same.For the chip processing procedure factory of upstream, the processing compatibility of traditional horizontal structure is high, need not to buy more new-type or special board again, simultaneously, and for down-stream system factory, such as the collocation difference of the design of power supply aspect etc. periphery and little.But be different from small-size grains, high-capacity LED usually need to be worked under large electric current, therefore electric current evenly will be spread on large scale LED is not the part nothing the matter, the larger evenly diffusion of size is difficulty more, and because the relation of geometric effect, P, N electrode design must keep balance, otherwise all can cause serious electric current clustering effect (Current crowding), the result except meeting so that LED do not reach the brightness of design, also can damage the reliability of wafer, so the light extraction efficiency of large scale LED reduced size low often.
It is complicated many that the technique of another kind of vertical conductive structure is then wanted.Because present commercial blue-ray LED nearly all grows on the sapphire substrate, therefore to change vertical conductive structure into, must be first and conductive board do after the joint, more nonconducting sapphire substrate is removed, just can finish successive process afterwards.Owing in manufacturing process, changed substrate, so vertical conductive structure can be improved heat radiation, reduced the knot surface temperature, and indirectly improved luminous efficiency.With regard to CURRENT DISTRIBUTION, in vertical stratification, do not need too much to consider cross conduction, so the electric current uniformity of vertical stratification is better than traditional horizontal structure simultaneously.Yet the shortcoming of vertical conductive structure maximum is, because process complexity is higher, causes the more traditional horizontal structure of yield low, and the cost of making exceeds much.
Solution as large scale, high-capacity LED, adopt the efficient of high pressure light-emitting diode chip to be better than the low-voltage luminescence diode chip for backlight unit, mainly be attributable to the little electric current for high pressure light-emitting diode chip, the design of multi-chip unit can be come current spread equably, thereby promote the external quantum efficiency of light-emitting diode.On the other hand, except needs are considered the efficient of chip itself, the price of final products also is an important indicator, the low-pressure high-power chip, need transformer of optional equipment, the use of transformer has increased the light source cost on the one hand, has increased on the other hand the loss in the transfer process of energy, and high pressure light-emitting diode chip does not then need to arrange transformer.
In addition, because the volume of light-emitting diode chip for backlight unit own is little, thermal source is concentrated easily, so that the lifetime of light-emitting component own.In order to solve the problem of heat radiation, the heat dissipation design on the light-emitting diode chip for backlight unit lamp source is also indispensable, and the heat dissipation design aspect is the most common with metal fin at present, but metal fin also increases the cost in lamp source except increasing the weight in lamp source.Because the efficient of high-voltage LED own is high, can reduce the demand to heat radiation, and then cutting down cost; From the angle of power supply conversion, the power supply changeover device of the little wattage of high voltage, except volume was little, because the element that adopts is few, cost was also lower.Therefore, the advantage of high-voltage LED not only is chip itself, and it can also directly or indirectly further promote the efficient of integrated light source module.
In addition, high-voltage LED on using with the general topmost difference of low pressure diode is, it not only can be applied in the stable state direct current, simultaneously, high-voltage LED needs only external bridge rectifier and connects bridge rectifier in not needing, so high-voltage LED also can be applied to communication environment, applicability is stronger, and connect the light-emitting zone of bridge rectifier in not needing to arrange, therefore make luminous efficiency relatively high, durability is also better.
High-voltage LED and traditional low-voltage luminescence diode technically topmost difference have 3 points, groove (Trench), insulating barrier (Isolation) and wire interconnection (Interconnect).And the key problem in technology of insulating barrier (Isolation) and wire interconnection (Interconnect) all is based on the structure of groove.The purpose that groove is set is several single-chip independent, therefore, the beneath trenches of high-voltage LED need to reach insulating barrier, its degree of depth is according to different epitaxial structure and different, generally about 4～8um, the groove width aspect is then without certain restriction, but the too wide minimizing that is representing effective light-emitting zone of groove, the luminous efficiency performance of high-voltage LED will be affected, therefore need suitable depth-to-width ratio and furrow bank angle, dwindling the processing procedure live width increases luminous efficiency, and slow trench wall provides platform for side wall deposition.
Therefore, good connection and side wall deposition for the metal connecting line on upper strata all need smooth surface, along with the depth-to-width ratio of groove constantly increases, the step-like structure meeting so that film continuity reduce, thereby under high electric current and high voltage, reduced the reliability of chip.Yet, find that from existing design wire interconnection all is the metal material that adopts, the conductor thickness of metal material all will be more than um, can guarantee continuity, but do not have light transmission at this metal material more than thickness, also has high electromigration such as the aluminium electrode especially, so under high drive, step corner is prone to fusing and causes chip failure.Plain conductor is interconnected to have reduced effective lighting area so adopt, and has reduced the stability of chip.
Summary of the invention
It is interconnected as electricity to the purpose of this invention is to provide a kind of nonmetal wire, increases front lighting area, the reliability that lifting lead wire is interconnected with effect.
For addressing the above problem, the invention provides a kind of light-emitting diode chip for backlight unit, comprising:
Growth substrate;
Two above light emitting diodes are formed on the described growth substrate, pass through deep trench isolation between the adjacent described light emitting diode;
Nonmetal wire is covered on the described deep trench, and two adjacent light emitting diodes are by described nonmetal wire serial or parallel connection;
The metal electrode pad is formed on the light emitting diode of outermost of described light-emitting diode chip for backlight unit.
Further, each light emitting diode upwards comprises first kind semiconductor layer, luminescent layer and Second Type semiconductor layer successively by bottom.
Further, the summation thickness of described first kind semiconductor layer, luminescent layer and Second Type semiconductor layer is 4 μ m～8 μ m.
Further, described first kind semiconductor layer is n type semiconductor layer, and described Second Type semiconductor layer is p type semiconductor layer.
Further, the Second Type semiconductor layer of the light emitting diode that the first kind semiconductor layer of each described light emitting diode is adjacent by described nonmetal wire successively is electrically connected, and forms series loop.
Further, the first kind semiconductor layer of described light emitting diode is electrically connected respectively by described nonmetal wire, and the Second Type semiconductor layer of described light emitting diode is electrically connected respectively by described nonmetal wire, forms the shunt circuit.
Further, described nonmetal wire is light transmittance greater than 50% metallic compound.
Further, the resistivity of described nonmetal wire is less than 1 * 10
-3Ω cm.
Further, the material of described nonmetal wire is indium tin oxide, mixes indium-zinc oxide, mixes the gallium zinc oxide, mixes the film of a kind of or its combination in aluminium zinc oxide or the Graphene.
Further, the aperture pitch of described deep trench is greater than the bottom spacing.
Further, the bottom spacing of described deep trench is greater than 5 μ m, and the ratio value of the aperture pitch of described deep trench and its bottom spacing is greater than 1.2.
Further, described light-emitting diode chip for backlight unit also comprises the transparent insulation protective layer, and described transparent insulation protective layer is isolated Second Type semiconductor layer and the luminescent layer of described nonmetal wire and described light emitting diode.
Further, described metal electrode pad comprises first kind metal electrode pad and Second Type metal electrode pad, described first kind metal electrode pad is formed on the first kind semiconductor layer of a light-emitting diode chip for backlight unit of outermost of light-emitting diode chip for backlight unit, and described Second Type routing layer is positioned on the Second Type semiconductor layer with described first kind metal electrode pad pitch light-emitting diode chip for backlight unit farthest.
Further, described first kind metal electrode pad is N-type metal electrode pad, and described Second Type metal electrode pad is P type metal electrode pad.
Further, the transparent insulation protective layer is a kind of or its combination in silica, silicon nitride, titanium oxide, silica gel or the epoxy resin.
Further, described light-emitting diode chip for backlight unit is high pressure light-emitting diode chip.
The present invention also provides a kind of manufacture method of light-emitting diode chip for backlight unit, comprising:
One growth substrate is provided;
Form deep trench isolation between two above light emitting diodes and the adjacent light emitting diode at described growth substrate;
Cover nonmetal wire in described deep trench, two adjacent light emitting diodes are by described nonmetal wire serial or parallel connection;
Light emitting diode in the outermost of described light-emitting diode chip for backlight unit forms the metal electrode pad.
Further, the step that forms the deep trench isolation between two above light emitting diodes and the adjacent light emitting diode at described growth substrate comprises:
Adopt the metal oxide vapor phase deposition method on described growth substrate, to form successively first kind semiconductor layer, luminescent layer and Second Type semiconductor layer;
The described first kind semiconductor layer of etching, luminescent layer and Second Type semiconductor layer pass through deep trench isolation to form two above light emitting diodes and deep trench between the adjacent described light emitting diode.
Further, the summation thickness of described first kind semiconductor layer, luminescent layer and Second Type semiconductor layer is 4 μ m～8 μ m.
Further, described first kind semiconductor layer is n type semiconductor layer, and described Second Type semiconductor layer is p type semiconductor layer.
Further, the Second Type semiconductor layer of the light emitting diode that the first kind semiconductor layer of each described light emitting diode is adjacent by described nonmetal wire successively is electrically connected, and forms series loop.
Further, the first kind semiconductor layer of described light emitting diode is electrically connected respectively by described nonmetal wire, and the Second Type semiconductor layer of described light emitting diode is electrically connected respectively by described nonmetal wire, forms the shunt circuit.
Further, described nonmetal wire is light transmittance greater than 50% metallic compound.
Further, the resistivity of described nonmetal wire is less than 1 * 10
-3Ω cm.
Further, the material of described nonmetal wire is indium tin oxide, mixes indium-zinc oxide, mixes the gallium zinc oxide, mixes a kind of or its combination in aluminium zinc oxide or the Graphene.
Further, the aperture pitch of described deep trench is greater than the bottom spacing.
Further, the bottom spacing of described deep trench is greater than 5 μ m, and the ratio value of the aperture pitch of described deep trench and its bottom spacing is greater than 1.2.
Further, described light-emitting diode chip for backlight unit also comprises the transparent insulation protective layer, and described transparent insulation protective layer is isolated Second Type semiconductor layer and the luminescent layer of described nonmetal wire and described light emitting diode.
Further, described metal electrode pad comprises first kind metal electrode pad and Second Type metal electrode pad, described first kind metal electrode pad is formed on the first kind semiconductor layer of a light-emitting diode chip for backlight unit of outermost of light-emitting diode chip for backlight unit, and described Second Type routing layer is positioned on the Second Type semiconductor layer with described first kind metal electrode pad pitch light-emitting diode chip for backlight unit farthest.
Further, described first kind metal electrode pad is N-type metal electrode pad, and described Second Type metal electrode pad is P type metal electrode pad.
Further, the transparent insulation protective layer is a kind of or its combination in silica, silicon nitride, titanium oxide, silica gel or the epoxy resin.
Further, described light-emitting diode chip for backlight unit is high pressure light-emitting diode chip.
In sum, semiconductor chip of the present invention adopts nonmetal wire as the interconnection structure between the light emitting diode, large and light transmission is poor than the conductor thickness of metal material, described nonmetal wire have better light transmission and thickness can relative thin some, and when high drive, step corner is not prone to fusing and causes the problem of chip failure, thereby has not only improved effective lighting area, has improved simultaneously the stability of light-emitting diode chip for backlight unit.
Further, the sidewall ramp shape of deep trench of the present invention and aperture pitch further improve the continuity of nonmetal wire greater than the bottom spacing, thereby under high electric current and high voltage, can keep the reliability of light-emitting diode chip for backlight unit.
Description of drawings
Fig. 1 is the cross-sectional view of light-emitting diode chip for backlight unit in one embodiment of the invention.
Fig. 2 is the planar structure schematic diagram of light-emitting diode chip for backlight unit in one embodiment of the invention.
Fig. 3 is the planar structure schematic diagram of light-emitting diode chip for backlight unit in another embodiment of the present invention.
Fig. 4 is the circuit diagram of Fig. 2 and light-emitting diode chip for backlight unit shown in Figure 3.
Fig. 5 is the planar structure schematic diagram of light-emitting diode chip for backlight unit in further embodiment of this invention.
Fig. 6 is the circuit diagram of light-emitting diode chip for backlight unit shown in Figure 4.
Fig. 7 is the planar structure schematic diagram of light-emitting diode chip for backlight unit in yet another embodiment of the invention.
Fig. 8 is the circuit diagram of light-emitting diode chip for backlight unit shown in Figure 7.
Embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art also is encompassed in protection scope of the present invention.
Secondly, the present invention utilizes schematic diagram to carry out detailed statement, and when example of the present invention was described in detail in detail, for convenience of explanation, schematic diagram did not amplify according to general ratio is local, should be with this as limitation of the invention.
The invention provides a kind of light-emitting diode chip for backlight unit, comprise: growth substrate, two above light emitting diodes, deep trench isolation, nonmetal wire and metal electrode pads, described light emitting diode is formed on the described growth substrate, pass through deep trench isolation between the adjacent described light emitting diode, described nonmetal wire is covered on the described deep trench, and two adjacent light emitting diodes are by described nonmetal wire serial or parallel connection; Described metal electrode pad is formed on the light emitting diode of outermost of described light-emitting diode chip for backlight unit.
Semiconductor chip of the present invention adopts nonmetal wire as the interconnection structure between the light emitting diode, large and light transmission is poor than the conductor thickness of metal material, described nonmetal wire have better light transmission and thickness can relative thin some, and when high drive, step corner is not prone to the problem that fusing causes chip failure, thereby not only improved effective lighting area, improved simultaneously the stability of light-emitting diode chip for backlight unit.
Fig. 1 is the cross-sectional view of light-emitting diode chip for backlight unit in one embodiment of the invention, as shown in Figure 1, in the present embodiment, each light emitting diode upwards comprises first kind semiconductor layer 22, luminescent layer 23 and Second Type semiconductor layer 24 successively by bottom.Can adopt the mode of the mode combination that series system, parallel way or series connection be combined with parallel way to connect between the light emitting diode; In one embodiment, the Second Type semiconductor layer 24 of the light emitting diode that the first kind semiconductor layer 22 of each described light emitting diode is adjacent by described nonmetal wire 3 successively is electrically connected, form series loop, the circuit structure of its series loop as shown in Figure 4.
In other embodiments, the first kind semiconductor layer 22 of described light emitting diode is electrically connected respectively by described nonmetal wire 3, the Second Type semiconductor layer 24 of described light emitting diode is electrically connected respectively by described nonmetal wire 3, forms the shunt circuit.
In the present embodiment, described first kind semiconductor layer is n type semiconductor layer, and described Second Type semiconductor layer is p type semiconductor layer.
Described nonmetal wire is light transmittance greater than 50% metallic compound.The resistivity of described nonmetal wire is less than 1 * 10
-3Ω cm.The material of described nonmetal wire is indium tin oxide, mixes indium-zinc oxide, mixes the gallium zinc oxide, mixes a kind of or its combination in aluminium zinc oxide or the Graphene.
The aperture pitch of described deep trench is greater than the bottom spacing.The bottom spacing of described deep trench is greater than 5 μ m, and the ratio value of the aperture pitch of described deep trench and its bottom spacing is greater than 1.2.The summation thickness of described first kind semiconductor layer, luminescent layer and Second Type semiconductor layer is 4 μ m～8 μ m.
Described light-emitting diode chip for backlight unit also comprises the transparent insulation protective layer, and described transparent insulation protective layer is isolated Second Type semiconductor layer and the luminescent layer of described nonmetal wire and described light emitting diode.Described metal electrode pad comprises first kind metal electrode pad and Second Type metal electrode pad, described first kind metal electrode pad is formed on the first kind semiconductor layer of a light-emitting diode chip for backlight unit of outermost of light-emitting diode chip for backlight unit, and described Second Type routing layer is positioned on the Second Type semiconductor layer with described first kind metal electrode pad pitch light-emitting diode chip for backlight unit farthest.In the present embodiment, described first kind metal electrode pad is N-type metal electrode pad, and described Second Type metal electrode pad is P type metal electrode pad.
In other embodiments, described first kind semiconductor layer can be p type semiconductor layer, and described Second Type semiconductor layer can be n type semiconductor layer; Then corresponding described first kind metal electrode pad is P type metal electrode pad, and described Second Type metal electrode pad is N-type metal electrode pad.The transparent insulation protective layer can be a kind of or its combination in silica, silicon nitride, titanium oxide, silica gel or the epoxy resin.
In addition, the structure of described light-emitting diode chip for backlight unit is better is applicable to high pressure light-emitting diode chip, certainly is not limited to high pressure light-emitting diode chip.
In the present embodiment, the present invention also provides a kind of manufacture method of light-emitting diode chip for backlight unit, may further comprise the steps:
Step S01: a growth substrate is provided;
Step S02: form deep trench isolation between two above light emitting diodes and the adjacent light emitting diode at described growth substrate;
In step S02, epitaxial growth crystal semiconductor layer successively on growth substrate 21 at first, described epitaxial growth crystal semiconductor layer upwards comprises n type semiconductor layer 22, luminescent layer 23 and p type semiconductor layer 24 successively by bottom; Then, described growth substrate 21 is carried out dividing elements, utilize ICP (inductively coupled plasma, Inductively Coupled Plasma) etching method or RIE (reactive ion etching, Reactive Ion Etching) method is at the exposed n type semiconductor layer 22 in regulation zone, recycling ICP etching method forms deep trench with etching between the adjacent light emitting diode, the electricity that described deep trench is used between the adjacent light emitting diode is isolated, in preferred embodiment, the bottom spacing d of described deep trench is less than its top aperture pitch D, the ratio value of its upper base aperture pitch D and the aperture pitch d that goes to the bottom, be D: d is greater than 1.2, in the present embodiment, the bottom spacing d=15um of described deep trench; Then the adjacent ditch trough rim at adjacent cells carries out the protection of sidewall electric insulation, covers transparent insulation protective layer 2, and same electric insulation protection is finished on light emitting diode A2, A3, A4, A5 etc. simultaneously.
Step S03: cover nonmetal wire in described deep trench, two adjacent light emitting diodes are by described nonmetal wire serial or parallel connection;
In step S03, at the certain thickness nonmetal wire film of light emitting diode surface sputtering, and utilize wet etching or the dry etching of acid to form nonmetal wire 3, in preferred embodiment, the material of described nonmetal wire can be for indium tin oxide, mix indium-zinc oxide, mix the gallium zinc oxide, mix a kind of or its combination in aluminium zinc oxide or the Graphene.Then, make electric interconnection pattern, described electric interconnection pattern can be that bar shaped is interconnected or the pawl type is interconnected, referring to figs. 2 and 3, it is interconnected that Fig. 2 is called bar shaped, and it is interconnected that Fig. 3 is called the pawl type.
Fig. 1 to Fig. 3 is interconnected as example take the tandem of 5 light emitting diodes, certainly in light-emitting diode chip for backlight unit, the light emitting diode number is not limited to 5, and the pawl number that Fig. 3 median claw type is interconnected and size are just to explanation of the invention process, and practice can adopt quantity and the pawl type spacing dimension of more optimizing.
Fig. 5 is the floor map that the present invention has light-emitting diode chip for backlight unit among the embodiment, and it is the light-emitting diode chip for backlight unit that the formula of turning round is connected.Fig. 6 is the circuit diagram of light-emitting diode chip for backlight unit shown in Figure 4.In conjunction with Fig. 6 and Fig. 6, after the light emitting diode surface has made the transparent insulation protective layer 3 of sputter, edge-lit diode A5 and A ' 1, A ' 3 and A6, A10 and A ' 4 still cover with the bullion layer between A ' 6 and the A11, to improve electric conductivity.It is interconnected that the centre of whole chip still adopts Fig. 3 to carry out electricity.The quantity of light emitting diode and arrange and be not limited to Fig. 4 and describe.Fig. 7 is the planar structure schematic diagram of light-emitting diode chip for backlight unit in yet another embodiment of the invention.Fig. 8 is the circuit diagram of light-emitting diode chip for backlight unit shown in Figure 7.In conjunction with Fig. 7 and shown in Figure 8, the applicable equally interconnected light-emitting diode chip for backlight unit of bridge-type of light-emitting diode chip for backlight unit of the present invention, the i.e. connected mode of series and parallel connections combination.
Step S04: the light emitting diode in the outermost of described light-emitting diode chip for backlight unit forms the metal electrode pad.
In step S04, at p type semiconductor layer 24 surfaces of light emitting diode A1 and n type semiconductor layer 22 surface deposition metal electrode pad 11 and the metal electrode pads 12 of light emitting diode A5; The material of metal electrode pad can be chromium aluminium compound (Cr/Al), ambrose alloy compound (Ni/Au) or chromium platinum compound (Cr/Pt/Au) etc.
In the present embodiment, each light emitting diode upwards comprises first kind semiconductor layer, luminescent layer and Second Type semiconductor layer successively by bottom.Can adopt the mode of the mode combination that series system, parallel way or series connection be combined with parallel way to connect between the light emitting diode; The Second Type semiconductor layer of the light emitting diode that the first kind semiconductor layer of each described light emitting diode is adjacent by described nonmetal wire successively is electrically connected, and forms series loop.The first kind semiconductor layer of described light emitting diode is electrically connected by described nonmetal wire, and the Second Type semiconductor layer of described light emitting diode is electrically connected by described nonmetal wire, forms the shunt circuit.
In the present embodiment, described first kind semiconductor layer is n type semiconductor layer, and described Second Type semiconductor layer is p type semiconductor layer.
Described nonmetal wire is light transmittance greater than 50% metallic compound.The resistivity of described nonmetal wire is less than 1 * 10
-3Ω cm.The material of described nonmetal wire is indium tin oxide, mixes indium-zinc oxide, mixes the gallium zinc oxide, mixes a kind of or its combination in aluminium zinc oxide or the Graphene.
The aperture pitch of described deep trench is greater than the bottom spacing.The bottom spacing of described deep trench is greater than 5 μ m, and the ratio value of the aperture pitch of described deep trench and its bottom spacing is greater than 1.2.The summation thickness of described first kind semiconductor layer, luminescent layer and Second Type semiconductor layer is 4 μ m～8 μ m.
Described light-emitting diode chip for backlight unit also comprises the transparent insulation protective layer, and described transparent insulation protective layer is isolated Second Type semiconductor layer and the luminescent layer of described nonmetal wire and described light emitting diode.Described metal electrode pad comprises first kind metal electrode pad and Second Type metal electrode pad, described first kind metal electrode pad is formed on the first kind semiconductor layer of a light-emitting diode chip for backlight unit of outermost of light-emitting diode chip for backlight unit, and described Second Type routing layer is positioned on the Second Type semiconductor layer with described first kind metal electrode pad pitch light-emitting diode chip for backlight unit farthest.In the present embodiment, described first kind metal electrode pad is N-type metal electrode pad, and described Second Type metal electrode pad is P type metal electrode pad.
In other embodiments, described first kind semiconductor layer can be p type semiconductor layer, and described Second Type semiconductor layer can be n type semiconductor layer; Then corresponding described first kind metal electrode pad is P type metal electrode pad, and described Second Type metal electrode pad is N-type metal electrode pad.The transparent insulation protective layer can be a kind of or its combination in silica, silicon nitride, titanium oxide, silica gel or the epoxy resin.
In sum, semiconductor chip of the present invention adopts nonmetal wire as the interconnection structure between the light emitting diode, large and light transmission is poor than the conductor thickness of metal material, described nonmetal wire have better light transmission and thickness can relative thin some, and when high drive, step corner is not prone to fusing and causes the problem of chip failure, thereby has not only improved effective lighting area, has improved simultaneously the stability of light-emitting diode chip for backlight unit.
Further, the sidewall ramp shape of deep trench of the present invention and aperture pitch further improve the continuity of nonmetal wire greater than the bottom spacing, thereby under high electric current and high voltage, can keep the reliability of light-emitting diode chip for backlight unit.
Although the present invention discloses as above with preferred embodiment; so it is not to limit the present invention; have in the technical field under any and usually know the knowledgeable; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (32)
1. a light-emitting diode chip for backlight unit is characterized in that, comprising:
Growth substrate;
Two above light emitting diodes are formed on the described growth substrate, pass through deep trench isolation between the adjacent described light emitting diode;
Nonmetal wire is covered on the described deep trench, and two adjacent light emitting diodes are by described nonmetal wire serial or parallel connection;
The metal electrode pad is formed on the light emitting diode of outermost of described light-emitting diode chip for backlight unit.
2. light-emitting diode chip for backlight unit as claimed in claim 1 is characterized in that, each light emitting diode upwards comprises first kind semiconductor layer, luminescent layer and Second Type semiconductor layer successively by bottom.
3. light-emitting diode chip for backlight unit as claimed in claim 2 is characterized in that, the summation thickness of described first kind semiconductor layer, luminescent layer and Second Type semiconductor layer is 4 μ m～8 μ m.
4. light-emitting diode chip for backlight unit as claimed in claim 2 is characterized in that, described first kind semiconductor layer is n type semiconductor layer, and described Second Type semiconductor layer is p type semiconductor layer.
5. light-emitting diode chip for backlight unit as claimed in claim 2, it is characterized in that, the Second Type semiconductor layer of the light emitting diode that the first kind semiconductor layer of each described light emitting diode is adjacent by described nonmetal wire successively is electrically connected, and forms series loop.
6. light-emitting diode chip for backlight unit as claimed in claim 2, it is characterized in that, the first kind semiconductor layer of described light emitting diode is electrically connected respectively by described nonmetal wire, the Second Type semiconductor layer of described light emitting diode is electrically connected respectively by described nonmetal wire, forms the shunt circuit.
7. light-emitting diode chip for backlight unit as claimed in claim 1 is characterized in that, described nonmetal wire is light transmittance greater than 50% metallic compound.
8. light-emitting diode chip for backlight unit as claimed in claim 1 is characterized in that, the resistivity of described nonmetal wire is less than 1 * 10
-3Ω cm.
9. light-emitting diode chip for backlight unit as claimed in claim 1 is characterized in that, the material of described nonmetal wire is indium tin oxide, mixes indium-zinc oxide, mixes the gallium zinc oxide, mixes the film of a kind of or its combination in aluminium zinc oxide or the Graphene.
10. light-emitting diode chip for backlight unit as claimed in claim 1 is characterized in that, the aperture pitch of described deep trench is greater than the bottom spacing.
11. light-emitting diode chip for backlight unit as claimed in claim 10 is characterized in that, the bottom spacing of described deep trench is greater than 5 μ m, and the ratio value of the aperture pitch of described deep trench and its bottom spacing is greater than 1.2.
12. light-emitting diode chip for backlight unit as claimed in claim 1; it is characterized in that; described light-emitting diode chip for backlight unit also comprises the transparent insulation protective layer, and described transparent insulation protective layer is isolated Second Type semiconductor layer and the luminescent layer of described nonmetal wire and described light emitting diode.
13. light-emitting diode chip for backlight unit as claimed in claim 12, it is characterized in that, described metal electrode pad comprises first kind metal electrode pad and Second Type metal electrode pad, described first kind metal electrode pad is formed on the first kind semiconductor layer of a light-emitting diode chip for backlight unit of outermost of light-emitting diode chip for backlight unit, and described Second Type routing layer is positioned on the Second Type semiconductor layer with described first kind metal electrode pad pitch light-emitting diode chip for backlight unit farthest.
14. light-emitting diode chip for backlight unit as claimed in claim 12 is characterized in that, described first kind metal electrode pad is N-type metal electrode pad, and described Second Type metal electrode pad is P type metal electrode pad.
15. light-emitting diode chip for backlight unit as claimed in claim 12 is characterized in that, the transparent insulation protective layer is a kind of or its combination in silica, silicon nitride, titanium oxide, silica gel or the epoxy resin.
16., it is characterized in that described light-emitting diode chip for backlight unit is high pressure light-emitting diode chip such as the described light-emitting diode chip for backlight unit of any one in the claim 1 to 15.
17. the manufacture method of a light-emitting diode chip for backlight unit comprises:
One growth substrate is provided;
Form deep trench isolation between two above light emitting diodes and the adjacent light emitting diode at described growth substrate;
Cover nonmetal wire in described deep trench, two adjacent light emitting diodes are by described nonmetal wire serial or parallel connection;
Light emitting diode in the outermost of described light-emitting diode chip for backlight unit forms the metal electrode pad.
18. the manufacture method of light-emitting diode chip for backlight unit as claimed in claim 17 is characterized in that, the step that forms the deep trench isolation between two above light emitting diodes and the adjacent light emitting diode at described growth substrate comprises:
Adopt the metal oxide vapor phase deposition method on described growth substrate, to form successively first kind semiconductor layer, luminescent layer and Second Type semiconductor layer;
The described first kind semiconductor layer of etching, luminescent layer and Second Type semiconductor layer pass through deep trench isolation to form two above light emitting diodes and deep trench between the adjacent described light emitting diode.
19. the manufacture method of light-emitting diode chip for backlight unit as claimed in claim 17 is characterized in that, the summation thickness of described first kind semiconductor layer, luminescent layer and Second Type semiconductor layer is 4 μ m～8 μ m.
20. the manufacture method of light-emitting diode chip for backlight unit as claimed in claim 17 is characterized in that, described first kind semiconductor layer is n type semiconductor layer, and described Second Type semiconductor layer is p type semiconductor layer.
21. the manufacture method of light-emitting diode chip for backlight unit as claimed in claim 17, it is characterized in that, the Second Type semiconductor layer of the light emitting diode that the first kind semiconductor layer of each described light emitting diode is adjacent by described nonmetal wire successively is electrically connected, and forms series loop.
22. the manufacture method of light-emitting diode chip for backlight unit as claimed in claim 17, it is characterized in that, the first kind semiconductor layer of described light emitting diode is electrically connected respectively by described nonmetal wire, the Second Type semiconductor layer of described light emitting diode is electrically connected respectively by described nonmetal wire, forms the shunt circuit.
23. the manufacture method of light-emitting diode chip for backlight unit as claimed in claim 17 is characterized in that, described nonmetal wire is light transmittance greater than 50% metallic compound.
24. the manufacture method of light-emitting diode chip for backlight unit as claimed in claim 17 is characterized in that, the resistivity of described nonmetal wire is less than 1 * 10
-3Ω cm.
25. the manufacture method of light-emitting diode chip for backlight unit as claimed in claim 17 is characterized in that, the material of described nonmetal wire is indium tin oxide, mixes indium-zinc oxide, mixes the gallium zinc oxide, mixes a kind of or its combination in aluminium zinc oxide or the Graphene.
26. the manufacture method of light-emitting diode chip for backlight unit as claimed in claim 17 is characterized in that, the aperture pitch of described deep trench is greater than the bottom spacing.
27. the manufacture method of light-emitting diode chip for backlight unit as claimed in claim 26 is characterized in that, the bottom spacing of described deep trench is greater than 5 μ m, and the ratio value of the aperture pitch of described deep trench and its bottom spacing is greater than 1.2.
28. the manufacture method of light-emitting diode chip for backlight unit as claimed in claim 17; it is characterized in that; described light-emitting diode chip for backlight unit also comprises the transparent insulation protective layer, and described transparent insulation protective layer is isolated Second Type semiconductor layer and the luminescent layer of described nonmetal wire and described light emitting diode.
29. the manufacture method of light-emitting diode chip for backlight unit as claimed in claim 28, it is characterized in that, described metal electrode pad comprises first kind metal electrode pad and Second Type metal electrode pad, described first kind metal electrode pad is formed on the first kind semiconductor layer of a light-emitting diode chip for backlight unit of outermost of light-emitting diode chip for backlight unit, and described Second Type routing layer is positioned on the Second Type semiconductor layer with described first kind metal electrode pad pitch light-emitting diode chip for backlight unit farthest.
30. the manufacture method of light-emitting diode chip for backlight unit as claimed in claim 28 is characterized in that, described first kind metal electrode pad is N-type metal electrode pad, and described Second Type metal electrode pad is P type metal electrode pad.
31. the manufacture method of light-emitting diode chip for backlight unit as claimed in claim 28 is characterized in that, the transparent insulation protective layer is a kind of or its combination in silica, silicon nitride, titanium oxide, silica gel or the epoxy resin.
32. the manufacture method such as the described light-emitting diode chip for backlight unit of any one in the claim 17 to 31 is characterized in that, described light-emitting diode chip for backlight unit is high pressure light-emitting diode chip.
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| CN2012103581981A CN102983147A (en) | 2012-09-24 | 2012-09-24 | Light emitting diode chip and production method thereof |
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|---|---|---|---|
| CN2012103581981A CN102983147A (en) | 2012-09-24 | 2012-09-24 | Light emitting diode chip and production method thereof |
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| CN103227250A (en) * | 2013-05-07 | 2013-07-31 | 中国科学院半导体研究所 | Fabrication method of flexible transparent conducting layer interconnected arrayed LED device |
| CN104409605A (en) * | 2014-11-28 | 2015-03-11 | 杭州士兰明芯科技有限公司 | High-voltage chip LED (light-emitting diode) structure and manufacture method thereof |
| CN105247694A (en) * | 2013-05-29 | 2016-01-13 | 首尔伟傲世有限公司 | Light emitting diode having plurality of light emitting elements and method of fabricating the same |
| CN105655450A (en) * | 2014-11-13 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Passivation layer deposition method of high-voltage LED chip |
| CN108305886A (en) * | 2018-03-30 | 2018-07-20 | 映瑞光电科技(上海)有限公司 | A kind of LED chip and its manufacturing method |
| CN111916432A (en) * | 2019-05-08 | 2020-11-10 | 深圳第三代半导体研究院 | Uniform light emitting diode chip with upright integrated unit |
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| CN111916432B (en) * | 2019-05-08 | 2022-09-09 | 深圳第三代半导体研究院 | Uniform light emitting diode chip with forward-mounted integrated unit |
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