CN103227250A - Fabrication method of flexible transparent conducting layer interconnected arrayed LED device - Google Patents
Fabrication method of flexible transparent conducting layer interconnected arrayed LED device Download PDFInfo
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- CN103227250A CN103227250A CN2013101634194A CN201310163419A CN103227250A CN 103227250 A CN103227250 A CN 103227250A CN 2013101634194 A CN2013101634194 A CN 2013101634194A CN 201310163419 A CN201310163419 A CN 201310163419A CN 103227250 A CN103227250 A CN 103227250A
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Abstract
A fabrication method of a flexible transparent conducting layer interconnected arrayed LED (light-emitting diode) device comprises the steps that an epitaxy structure comprises an unintentionally doped gallium nitride layer, an N-type GaN layer, a quantum well layer and a P-type GaN layer which grow on a patterned substrate sequentially; a transparent electrode layer is formed on the P-type GaN layer; a patterned mask is formed on the transparent electrode layer; the transparent electrode layer is etched downwards selectively to form grooves in the N-type GaN layer; insulating medium layers are fabricated on the surface of the transparent electrode layer and in the grooves; patterned masks are fabricated on the insulating medium layers; the bottoms of the grooves are etched downwards selectively to form isolated deep grooves; independent units isolated by the deep grooves are microcrystallites; insulating medium layers are fabricated on side walls on the two sides of each deep groove; a flexible transparent conducting layer is fabricated on the surface of each chip; the flexible transparent conducting layers beyond the insulating medium layers are removed to ensure that the N-type GaN layers of the microcrystallites (the independent units)are connected with the transparent electrode layers of the adjacent microcrystallites; P electrodes are prepared on the transparent electrode layers; and N electrodes are prepared on the N-type GaN layer in the grooves.
Description
Technical field
The invention belongs to technical field of semiconductors, be meant the array-type LED device manufacture method that a kind of flexible and transparent conductive layer is interconnected especially.
Background technology
GaN radical luminescence diode (Light-Emitting Diode, LED) assembly has a very wide range of applications at aspects such as room lighting, traffic lights, TV, mobile phone, LCD backlight source, street lamps, this mainly is that the luminous efficiency that how further to improve Light-Emitting Diode becomes key owing to it has power saving, environmental protection (not mercurous) is pollution-free, advantages such as the life-span is long, brightness is high, reaction is fast, volume is little, high-luminous-efficiency.
HV LED is a kind of array monolithic integrated LED chip.At present, in the process of making device, form independently micromeritics by technologies such as deep erosions on epitaxial loayer, by metal electrode that each micromeritics is interconnected again, the operating voltage of whole chips is improved in the series connection back.With respect to DC LED, HV LED does not need extra transformer, only needs easy drive circuit, when reducing the driving cost, has avoided the loss of energy in the switching process.
Purpose based on improving the LED light efficiency is used for interconnected metal material and generally adopts the comparatively serious material of extinction, influences the device surface bright dipping, causes a part of light loss.At present, because at visible light wave range transmitance height, materials such as ITO, ZnO, Graphene and carbon nano-tube have had more and more widely application as transparent electrode layer, wherein, material such as Graphene and carbon nano-tube has preferably mechanical performance and is called flexible material, and more having superiority aspect the light transmission rate with respect to TCO materials such as ITO, ZnO, is that a class has excellent properties and the electrode material of application prospect is more arranged.
Summary of the invention
The objective of the invention is to, provide a kind of flexible and transparent conductive layer interconnected array-type LED device manufacture method, this method adopts novel flexible transparent electrode material Graphene, this material transmitance height, conductive capability is strong, on the basis of metal interconnection electrode and conventional transparent electrode, further reduce extinction.Simultaneously, has very good pliability, these characteristics make can bear bigger mechanical strength by these new materials as the HV LED of transparency conducting layer, wider, humanized with respect to traditional structure HV LED range of application, has boundless development prospect.
The invention provides the interconnected array-type LED device manufacture method of a kind of flexible and transparent conductive layer, comprising:
Step 1: select an epitaxial structure, this epitaxial structure is included in involuntary doped gallium nitride layer, N type GaN layer, quantum well layer and the P type GaN layer of growing successively on the graph substrate;
Step 2: on P type GaN layer, form a transparent electrode layer;
Step 3: adopt the method for photoetching on transparent electrode layer, to form the figure mask, the downward etching of selectivity on transparent electrode layer, etching depth arrives in the N type GaN layer, forms groove on N type GaN layer;
Step 4: in the surface of transparent electrode layer and groove, make insulating medium layer, make the figure mask on insulating medium layer, at the downward selective etch of bottom portion of groove, etching depth is to the surface of graph substrate, forming the deep trouth of isolating, is micromeritics by the separate unit after the deep trench isolation;
Step 5: on the deep trouth side walls, make insulating medium layer, form substrate;
Step 6: make one deck flexible and transparent conductive layer on the surface of substrate;
Step 7: adopt the method for photoetching, remove insulating medium layer flexible and transparent conductive layer in addition, it is coupled together the N type GaN layer of the micromeritics of each separate unit and the transparent electrode layer of its adjacent micromeritics;
Step 8: preparation P electrode on transparent electrode layer;
Step 9: preparation N electrode on the N type GaN layer in groove, finish preparation.
Description of drawings
For making the auditor can further understand structure of the present invention, feature and purpose thereof, below in conjunction with the detailed description of accompanying drawing and preferred embodiment as after, wherein:
Fig. 1 is preparation flow figure of the present invention;
Fig. 2 is epitaxial structure 10 and the schematic diagram that forms transparency conducting layer 2;
Fig. 3 is the schematic diagram behind the formation groove after the etching;
Fig. 4 is the schematic diagram after forming the deep trouth of isolating and forming insulating medium layer 4;
Fig. 5 is for adopting the flexible and transparent electrode as interconnected array high-voltage LED device schematic diagram;
Fig. 6 is the schematic diagram after outermost step deposit metal electrodes.
Embodiment
See also Fig. 1, cooperate and to consult shown in Fig. 2-shown in Figure 6, the invention provides the interconnected array-type LED device manufacture method of a kind of flexible and transparent conductive layer:
Step 1: select an epitaxial structure 1, this epitaxial structure 1 is included in involuntary doped gallium nitride layer 11, N type GaN layer 12, quantum well layer 13 and P type GaN layer 14 (the consulting Fig. 2) of growing successively on the graph substrate 10, and wherein said graph substrate 10 is the patterned material of sapphire, carborundum, gallium nitride or silicon;
Step 2: form a transparent electrode layer 2 (consulting Fig. 3) on P type GaN layer 14, wherein said transparency conducting layer 2 is transparent conductive materials such as ITO or ZnO, and the preparation method is evaporation, sputter or chemical vapour deposition (CVD);
Step 3: adopt the method for photoetching on transparent electrode layer 2, to form the figure mask, the downward etching of selectivity on transparent electrode layer 2, etching depth arrives in the N type GaN layer 12, forms groove 99 (consulting Fig. 3) on N type GaN layer 12.Wherein corrode transparency conducting layer and adopt FeCl
3Or H
3PO
4Deng acid solution, etching adopts the inductively coupled plasma etching, and the degree of depth will be according to each layer structure and the thickness decision etch rate of epitaxial structure 1;
Step 4: in the surface of transparent electrode layer 2 and groove 99, make insulating medium layer, on insulating medium layer, make the figure mask, at the downward selective etch in groove 99 bottoms, etching depth is to the surface of graph substrate 10, form the deep trouth 100 of isolating, the separate unit after being isolated by deep trouth 100 is micromeritics 8 (consulting Fig. 4).Wherein, the material of insulating medium layer is materials such as silica, aluminium oxide or silicon nitride, using plasma strengthens method preparations such as chemical vapour deposition (CVD), ald, electron beam evaporation or sputter, adopts solution corrosions such as BOE or hydrochloric acid to remove the SI semi-insulation dielectric layer.Insulating layer material compactness will be got well, and guarantees to play the effect of deep erosion mask, and the mask material edge has high-resolution.The deep trouth 100 that deep erosion forms need guarantee that epitaxial material is etched totally, until backing material 10;
Step 5: on deep trouth 100 side walls, make insulating medium layer 4 (consulting Fig. 5), form substrate.Wherein, the material of insulating medium layer 4 is materials such as silica, aluminium oxide or silicon nitride, using plasma strengthens method preparations such as chemical vapour deposition (CVD), ald, electron beam evaporation or sputter, adopts solution corrosions such as BOE or hydrochloric acid to remove SI semi-insulation dielectric layer 4;
Step 6: make one deck flexible and transparent conductive layer 7 (consulting Fig. 6) on the surface of substrate.The material of wherein said flexible and transparent conductive layer 7 is the single or multiple lift film of Graphene or carbon nano-tube, and its preparation method comprises chemical vapour deposition technique, epitaxial growth method, electrochemical reducing or meteorological growth method etc.After preparation is finished, behind the photoresist of flexible and transparent conductive layer spin coating one deck such as PMMA etc., the substrate when adopting the FeCL3 solution corrosion to fall to grow transparency conducting layer is transferred on the HV LED device after soaking in deionized water, remove photoresists such as PMMA with acetone after, use deionized water rinsing again.
Step 7: adopt the method for photoetching, remove insulating medium layer 4 flexible and transparent conductive layer 7 in addition, it is coupled together the N type GaN layer 12 of the micromeritics 8 of each separate unit and the transparent electrode layer 2 of its adjacent micromeritics; But wherein remove partially flexible transparency conducting layer 7 using plasma methods, gas is O
2Or N
2, plasma treatment time is 1-20 minute, and the plasma power scope is 100-200W, and power is unsuitable too small, otherwise can not remove the transparency conducting layer 7 except that interconnect portion.Remove the photoresist figure mask on the interconnect portion transparency conducting layer 7, should adopt the method for soaking in acetone, soak time is unsuitable long, avoids ultrasonic as far as possible and waits processing step with flushing, to guarantee the integrality as the interconnected transparency conducting layer 7 of electrode.
Step 8: preparation P electrode 15 on transparent electrode layer 2.Wherein said P electrode 15 adopts the method preparation of electron beam evaporations, the material of metal electrode 15 be Cr, Pt, Au, Ag, Al or Ti or and combination, select for use the combination of metal material should make with the ohmic contact characteristic of ITO and P type GaN material good.
Step 9: preparation N electrode 16 on the N type GaN layer 12 in groove 99, finish preparation.Wherein said deposition N electrode 16 adopts the method for electron beam evaporations, the material of N electrode 16 be Cr, Pt, Au, Ag, Al or Ti or and combination, select for use the combination of metal material should make with the ohmic contact characteristic of ITO and P type GaN material good.
Embodiment
See also Fig. 1 to shown in Figure 6, the invention provides the interconnected array high-voltage LED device manufacture method of a kind of flexible and transparent conductive layer, comprising:
Step 1: select an epitaxial structure 1, this epitaxial structure is included in involuntary doped gallium nitride layer 11 (2 μ m), N type GaN layer 12 (2 μ m), quantum well layer 13 (100nm) and P type GaN layer 14 (100nm) that grow successively on the sapphire graphical substrate substrate 10;
Step 2: on P type GaN layer 14, adopt the electron beam evaporation methods method to deposit an ITO transparency conducting layer 2;
Step 2: adopt the method for photoetching to form the figure mask on ito transparent electrode layer 2, behind FeCl3 solution partial corrosion ITO, selective etch epitaxial structure 1, etching depth are 120nm, form groove 99 on N type GaN layer 12;
Step 3: the epitaxial structure 1 after forming groove 99 and the surperficial using plasma of the transparent electrode layer 2 after the corrosion strengthen the thick silicon oxide insulation dielectric layer 3 of chemical gaseous phase depositing process deposition one deck 1 μ m, adopt the method for photoetching to form the figure mask on the surface of insulating medium layer 3, after partial corrosion falls silicon oxide insulation dielectric layer 3, the N type GaN layer 12 that ICP method etching exposes, etching depth is 6 μ m, arrive sapphire graphical substrate substrate 10, form the deep trouth 100 of isolating, after removing the photoresist mask with acetone, adopt the insulating medium layer 3 of BOE solution corrosion remnants, form the epitaxial structure after the isolation with deep trouth;
Step 4: forming the thick silicon oxide insulation dielectric layer 4 of using plasma enhancing chemical gaseous phase depositing process deposition one deck 230nm on the epitaxial structure that comprises surface and sidewall with deep trouth, adopt the method for photoetching, on insulating medium layer, form photoresist figure mask, corrosion is removed remaining photoresist figure mask not by behind the insulating medium layer 4 of photoresist cover part with acetone;
Step 6: adopt the CVD method single-layer graphene material of on copper substrate, growing, behind the surface spin coating PMMA photoresist, the corrosion copper substrate is transferred at not interconnected array high-voltage LED device surface, remove the PMMA photoresist with acetone, form one deck flexible and transparent conductive layer 7;
Step 7: adopt photoetching method to make transparency conducting layer 7 graphical, this thin layer is coupled together the N type GaN layer 12 of the micromeritics 8 of epitaxial structure 1 and the P type GaN layer 14 of its adjacent micromeritics, form interconnected between particulate;
Step 8: adopt acetone to soak 3 minutes, remove the photoresist figure mask of interconnect portion.
Step 5: adopt the method for photoetching, after the P type GaN layer of two ends outermost stepped ramp type structure 99 and N type GaN laminar surface adopt the method evaporation metal electrode Cr/Pt/Au of electron beam evaporation, form the PN metal electrode respectively;
The above; only be the embodiment among the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (8)
1. array-type LED device manufacture method that the flexible and transparent conductive layer is interconnected comprises:
Step 1: select an epitaxial structure, this epitaxial structure is included in involuntary doped gallium nitride layer, N type GaN layer, quantum well layer and the P type GaN layer of growing successively on the graph substrate;
Step 2: on P type GaN layer, form a transparent electrode layer;
Step 3: adopt the method for photoetching on transparent electrode layer, to form the figure mask, the downward etching of selectivity on transparent electrode layer, etching depth arrives in the N type GaN layer, forms groove on N type GaN layer;
Step 4: in the surface of transparent electrode layer and groove, make insulating medium layer, make the figure mask on insulating medium layer, at the downward selective etch of bottom portion of groove, etching depth is to the surface of graph substrate, forming the deep trouth of isolating, is micromeritics by the separate unit after the deep trench isolation;
Step 5: on the deep trouth side walls, make insulating medium layer, form substrate;
Step 6: make one deck flexible and transparent conductive layer on the surface of substrate;
Step 7: adopt the method for photoetching, remove insulating medium layer flexible and transparent conductive layer in addition, it is coupled together the N type GaN layer of the micromeritics of each separate unit and the transparent electrode layer of its adjacent micromeritics;
Step 8: preparation P electrode on transparent electrode layer;
Step 9: preparation N electrode on the N type GaN layer in groove, finish preparation.
2. the array-type LED device manufacture method that flexible and transparent conductive layer according to claim 1 is interconnected, wherein said graph substrate are the patterned material of sapphire, carborundum, gallium nitride or silicon.
3. the array-type LED device manufacture method that flexible and transparent conductive layer according to claim 1 is interconnected, the material of wherein said transparent electrode layer are tin indium oxide or zinc oxide.
4. the array-type LED device manufacture method that flexible and transparent conductive layer according to claim 1 is interconnected, wherein said at transparent electrode layer the surface and groove in the material of the insulating medium layer made be silica, silicon nitride or aluminium oxide.
5. the array-type LED device manufacture method that flexible and transparent conductive layer according to claim 1 is interconnected, the quantity of wherein said groove are 2-20.
6. the array-type LED device manufacture method that flexible and transparent conductive layer according to claim 1 is interconnected, the material of wherein said insulating medium layer are silica, silicon nitride or aluminium oxide.
7. the array-type LED device manufacture method that flexible and transparent conductive layer according to claim 1 is interconnected, the material of wherein said flexible and transparent conductive layer are the single or multiple lift film of Graphene or carbon nano-tube.
8. the array-type LED device manufacture method that flexible and transparent conductive layer according to claim 1 is interconnected, the wherein said method of removing insulating medium layer flexible and transparent conductive layer in addition is a plasma processing method, the gas of employing is O
2Or N
2, the processing time is 1-20 minute, power bracket is 100-200W.
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Cited By (8)
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| CN103400850A (en) * | 2013-08-14 | 2013-11-20 | 中国科学院长春光学精密机械与物理研究所 | Flexible LED array device for micro-displaying and lighting and manufacture method |
| WO2015027654A1 (en) * | 2013-08-29 | 2015-03-05 | 无锡华润华晶微电子有限公司 | Method for preparing gallium nitride-based high-voltage light-emitting diode |
| CN105006450A (en) * | 2015-08-31 | 2015-10-28 | 中国科学院半导体研究所 | Preparation method of extensive inorganic flexible LED array |
| CN106652820A (en) * | 2016-12-28 | 2017-05-10 | 歌尔股份有限公司 | LED micro-display screen and preparing method thereof |
| CN107611235A (en) * | 2017-08-29 | 2018-01-19 | 合肥彩虹蓝光科技有限公司 | A kind of method for lifting high voltage LED chip luminous efficiency |
| CN108807607A (en) * | 2017-04-27 | 2018-11-13 | 合肥彩虹蓝光科技有限公司 | A kind of manufacturing method of specular removal high voltage LED chip |
| CN108807605A (en) * | 2017-04-27 | 2018-11-13 | 合肥彩虹蓝光科技有限公司 | A kind of manufacturing method of specular removal high voltage LED chip |
| CN108807351A (en) * | 2017-04-27 | 2018-11-13 | 合肥彩虹蓝光科技有限公司 | A kind of manufacturing method of high voltage LED chip |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400850A (en) * | 2013-08-14 | 2013-11-20 | 中国科学院长春光学精密机械与物理研究所 | Flexible LED array device for micro-displaying and lighting and manufacture method |
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| CN105006450A (en) * | 2015-08-31 | 2015-10-28 | 中国科学院半导体研究所 | Preparation method of extensive inorganic flexible LED array |
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| CN108807607A (en) * | 2017-04-27 | 2018-11-13 | 合肥彩虹蓝光科技有限公司 | A kind of manufacturing method of specular removal high voltage LED chip |
| CN108807605A (en) * | 2017-04-27 | 2018-11-13 | 合肥彩虹蓝光科技有限公司 | A kind of manufacturing method of specular removal high voltage LED chip |
| CN108807351A (en) * | 2017-04-27 | 2018-11-13 | 合肥彩虹蓝光科技有限公司 | A kind of manufacturing method of high voltage LED chip |
| CN107611235A (en) * | 2017-08-29 | 2018-01-19 | 合肥彩虹蓝光科技有限公司 | A kind of method for lifting high voltage LED chip luminous efficiency |
| CN107611235B (en) * | 2017-08-29 | 2019-06-25 | 合肥彩虹蓝光科技有限公司 | A method of promoting high voltage LED chip luminous efficiency |
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Application publication date: 20130731 |