CN102981271A - Manufacturing method of electrostatic-driven micro-electro-mechanical system (MEMS) deformable mirror with large-stroke structure - Google Patents
Manufacturing method of electrostatic-driven micro-electro-mechanical system (MEMS) deformable mirror with large-stroke structure Download PDFInfo
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Abstract
The invention discloses a manufacturing method of an electrostatic-driven micro-electro-mechanical system (MEMS) deformable mirror with a large-stroke structure. Based on a silicon surface processing technology, an electroplating technology and a wet etching and chemical polishing technology, by adding a stroke cavity on a silicon substrate, by utilizing optical resist or polymide or other substance as a sacrificial layer, by utilizing the electroplating technology to manufacture the structure of the deformable mirror, and by utilizing the mechanical polishing method to grind solidified optical resist and an electroplating layer, the MEMS deformable mirror which is provided with the large-stroke structure and has good performance can be manufactured. By adding the stroke cavity on the silicon substrate and arranging a bottom electrode and a guiding wire at the bottom of the stroke cavity, under the condition that manufacturing difficulty of the sacrificial layer is not increased, initial space between an upper electrode and the bottom electrode of the deformable mirror can be effectively increased, and effective stroke of the deformable mirror can be improved.
Description
Technical field
The invention belongs to the Micro-Opto-Electro-Mechanical Systems technical field, particularly a kind of method for making that is applicable to the large stroke MEMS of the electrostatic attraction type distorting lens of ADAPTIVE OPTICS SYSTEMS.
Background technology
In the distorting lens field, quiet electrically driven (operated) MEMS (microelectromechanical systems) distorting lens has fast response time, energy consumption is low, volume is little, cell density is high and the advantage compatible good with integrated circuit, and becomes a kind of micro deformable mirror that has development potentiality most.Yet, existing electrostatic drive MEMS distorting lens, because receiving the restriction of electrostatic attraction (pull-in) phenomenon, its effective travel only has 1/3rd of upper and lower electrode primary clearance.Adopt the MEMS distorting lens of the making of surface silicon technique, generally adopt silicon dioxide to do sacrifice layer, be subject to the restriction of existing stress control technique, the thickness of sacrifice layer is less, and generally at 3 μ m-8 μ m, and cost of manufacture is high, yield rate is low, causes the effective travel of distorting lens little, practical poor performance.
Summary of the invention
The technical problem to be solved in the present invention is: for the unmanageable defective of existing large thickness sacrifice layer, the object of the invention provides a kind of method for making of electrostatic drive MEMS distorting lens of large stroke structure.
In order to realize described purpose, the invention provides a kind of method for making of electrostatic drive MEMS distorting lens of large stroke structure, the step of its method for making is as follows:
Steps A is to step e: plate mask layer in silicon base; Resist coating on mask layer, and through forming the corrosion window in stroke chamber after photoetching, the development;
Step F: etch mask layer, etch silicon substrate form the stroke chamber;
Step G: at bottom, stroke chamber dry plasma etch technique etching through hole;
Step H: remove mask layer and photoresist, and depositing insulating layer;
Step I: at the bottom in stroke chamber processing bottom electrode and guide wire;
Step J: the spraying photoresist obtains making the window of anchor point, and deposits the anchor point plating seed layer after the photoetching;
Step K: wash photoresist off, obtain having the structure of anchor point plating seed layer;
Step L: resist coating, and obtain anchor point after the photoetching, development and electroplate window;
Step M: electroplate anchor point, the control electroplating thickness does not exceed the thickness of photoresist;
Step N: after electroplating anchor point, remove photoresist;
Step O: recoat photoresist, bondline thickness did not have anchor point;
Step P: solidify photoresist, the photoresist that obtains solidifying;
Photoresist and anchor point structure are solidified in step Q:CMP polishing, polishing guarantees to obtain to be exposed to outer, the smooth smooth anchor point of end face;
Step R: whirl coating on the curing photoresist of polishing, photoetching, development and sputter beam plating seed layer and top electrode plating seed layer;
Step S: wash photoresist off, utilize lift-off technique to remove unnecessary metal construction, obtain beam plating seed layer and top electrode plating seed layer structure;
Step T: again after resist coating, the photoetching, open the plating window of top electrode and the plating window of beam;
Step U: electroplate beam and top electrode;
Step V: wash photoresist after the plating off, and again get rid of photoresist;
Step W: the support column plating seed layer of photoetching, development, sputter support column;
Step X: wash photoresist off, utilize lift-off technique to remove unnecessary metal construction, recoat photoresist, behind the photoetching development, electroplate the post that is supported, the height thickness of control plated support post is lower than the height of photoresist;
Step Y: solidify photoresist, the photoresist after the flat curing of CMP throwing and the end face of support column;
Step Z: the plating seed layer of resist coating, photoetching, development and sputter minute surface on the structure of step 2Y;
Steps A A: remove photoresist, utilize lift-off technique to remove unnecessary metal construction, again resist coating, photoetching and electroplate mirror surface structure;
Step BB: wash the photoresist after the plating off, recoat photoresist, the thickness of photoresist did not have minute surface;
Step CC: hot setting photoresist, CMP are thrown flat photoresist and the minute surface that solidifies;
Step DD: the photoresist that dry release solidifies, the electrostatic drive MEMS distorting lens that obtains large stroke structure is quiet, and the photoresist that adopts dry release to solidify can each the interstructural adhesion of effectively preventing distorting lens.
Beneficial effect of the present invention: utilize photoresist or polyimide etc. as sacrifice layer, in conjunction with electroplating technology, chemical polishing (CMP) and low pressure chemical depositing operation (LPCVD), can effectively overcome the restriction of the processing technology of existing thick film difficult processing based on showing silicon technology, produce the upper and lower electrode structure of large initial separation, make distorting lens obtain large effective travel, reach as high as more than the 15 μ m.
The present invention solves the technical scheme that its technical matters takes: by in silicon base processing stroke chamber, make bottom electrode and guide wire in bottom, stroke chamber, in the situation that does not increase the sacrifice layer manufacture difficulty, but the initial separation between Effective Raise distorting lens upper/lower electrode, the effective travel of raising distorting lens.
Description of drawings
Fig. 1 is a kind of structural representation of electrostatic drive MEMS distorting lens of large stroke structure.
Fig. 2 A to Fig. 2 Z, Fig. 2 AA to Fig. 2 DD are a kind of fabrication processing synoptic diagram of electrostatic drive MEMS distorting lens of large stroke structure.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Introduce in detail the present invention below in conjunction with the drawings and specific embodiments.
The structure of the electrostatic drive MEMS distorting lens of large stroke structure as shown in Figure 1, parts among the figure contain: minute surface 1, beam 2, anchor point 3, silicon base 4, insulation course 5, guide wire 6, bottom electrode 7, stroke chamber 8, top electrode 9 and support column 10 mask layers 11, wherein: be processed with stroke chamber 8 on the silicon base 4, cover insulation course 5 on it, be manufactured with bottom electrode 7 in the bottom in stroke chamber 8, its lower surface bonding conductor line 6.Silicon base 4 is utilized the top electrode 9 of beam 2 supporting deformation mirrors by anchor point 3, and top electrode 9 consists of the MEMS distorting lens of large stroke structure by the minute surface 1 of support column 10 supporting deformation mirrors.
Such as accompanying drawing 2A to Fig. 2 Z, Fig. 2 AA to Fig. 2 DD illustrates and contains mask layer 11, photoresist 12, the stroke chamber etching window 13 of opening on the photoresist, the stroke chamber etching window 14 of opening on the mask layer 11, through hole 15, anchor point plating seed layer 16, unnecessary useless metal level 17, the plating window 18 of anchor point, the photoresist 19 that solidifies, beam plating seed layer 20, top electrode plating seed layer 21, the plating window 22 of top electrode, the plating window 23 of beam, the fabrication processing step of the electrostatic drive MEMS distorting lens of the large stroke structure of support column plating seed layer 24 and minute surface plating seed layer 25 is as follows:
Illustrate such as accompanying drawing 2A to Fig. 2 E: at silicon base 4 plating mask layers 11, mask layer 11 can be the materials such as metal or silicon nitride; Resist coating 12 on mask layer 11, and through forming the corrosion window 13 in stroke chamber 8 after photoetching, the development;
Etch mask layer 11, etch silicon substrate 4 form stroke chamber 8, shown in accompanying drawing 2F; Lithographic method can be used ICP dry etching or KOH solution wet etching;
2G illustrates such as accompanying drawing: use dry plasma etch technique (ICP) etching through hole 15 in 8 bottoms, stroke chamber;
2H illustrates such as accompanying drawing: remove mask layer 11 and photoresist 12, and depositing insulating layer 5, the material of insulation course 5 is silicon nitride;
2I illustrates such as accompanying drawing: at the bottom in stroke chamber 8 processing bottom electrode 7 and guide wire 6, the material of bottom electrode 7 and guide wire 6 is the polysilicon of metal or doping;
Spraying photoresist 12 obtains making the window of anchor point 3, and deposits anchor point plating seed layer 16, shown in accompanying drawing 2J after the photoetching;
Wash photoresist 12 off, obtain having the structure of anchor point plating seed layer 16, shown in accompanying drawing 2K;
Resist coating 12, and obtain anchor point after the photoetching, development and electroplate window 18, shown in Fig. 2 L;
Electroplate anchor point 3, the control electroplating thickness does not exceed the thickness of photoresist 12, and the structure that obtains is shown in Fig. 2 M;
After electroplating anchor point 3, remove photoresist 12, obtain the structure shown in Fig. 2 N;
Recoat photoresist 12, bondline thickness did not have anchor point 3, shown in Fig. 2 O;
The hot setting photoresist, the photoresist 19 that obtains solidifying is shown in Fig. 2 P;
Photoresist 19 and anchor point 3 structures that CMP polishing is solidified, polishing guarantee to obtain to be exposed to outer, the smooth smooth anchor point 3 of end face, resulting structures is shown in Fig. 2 Q;
Whirl coating on the curing photoresist 19 of polishing, photoetching, the also beam plating seed layer 20 of sputter beam 2 that develops, the top electrode plating seed layer 21 of top electrode 9, resulting structures is shown in Fig. 2 R;
Wash photoresist 12 off, utilize lift-off technique to remove unnecessary metal construction 17, obtain beam plating seed layer 20 and top electrode plating seed layer 21 structures, shown in Fig. 2 S;
Again open the plating window 22 of top electrode and the plating window 23 of beam after resist coating 12, the photoetching, shown in Fig. 2 T;
Wash photoresist 12 after the plating off, and again get rid of photoresist 12, shown in Fig. 2 V;
The support column plating seed layer 24 of photoetching, development, sputter support column 10 is shown in Fig. 2 W;
Wash photoresist 12 off, utilize lift-off technique to remove unnecessary metal construction 17, recoat photoresist 12, behind the photoetching development, electroplate the post 10 that is supported, the height of control plated support post 10 is lower than the height of photoresist 12, shown in Fig. 2 X;
Hot setting photoresist 12, the photoresist 19 after the flat curing of CMP throwing and the end face of support column 10 are shown in Fig. 2 Y;
The Electronic Speculum face plating sublayer 25 of resist coating, photoetching, development and sputter minute surface 1 on the structure shown in Fig. 2 Y is shown in Fig. 2 Z;
Remove photoresist 12, utilize lift-off technique to remove unnecessary metal construction 17, again resist coating 12, photoetching and electroplate minute surface 1 structure, resulting structures is shown in Fig. 2 AA;
Wash the photoresist 12 after the plating off, recoat photoresist 12, the thickness of photoresist 12 did not have minute surface 1, shown in Fig. 2 BB;
Hot setting photoresist 12, CMP are thrown flat photoresist 19 and the minute surface 1 that solidifies, and resulting structures is shown in Fig. 2 CC;
The photoresist 19 that dry release solidifies, the electrostatic drive MEMS distorting lens that obtains large stroke structure is quiet, adopts the photoresist 19 that dry release solidifies can each the interstructural adhesion of effectively preventing distorting lens, shown in Fig. 2 DD.
Wherein, after electroplating formation anchor point 3, recoat photoresist 12, photoresist 12 glue-lines did not have anchor point 3 structures, and the degree of depth that did not have is at 0.01 μ m-30 μ m, 180 degrees centigrade-360 degrees centigrade of drying glue temperature, 30 seconds-300 seconds drying glue time, solidify photoresist 12 and anchor point 3 structures, with photoresist 19 and the anchor point 3 of CMP chemical polishing curing, obtain smooth even curface, the polishing stock removal 0.01 μ m-20 μ m of anchor point 3.
Wherein, after obtaining plated support post 10 structures, 180 degrees centigrade-360 degrees centigrade of drying glue temperature, 30 seconds-300 seconds drying glue time, solidify photoresist 12 and support column 1 structure, photoresist 19 and support column 10 that the CMP chemical polishing is solidified obtain smooth even curface, the polishing stock removal 0.01 μ m-20 μ m of grinding and polishing support column 10.
Wherein, after electroplating minute surface 1 structure, recoat photoresist 12, photoresist 12 glue-lines did not have minute surface 1 structure, and the degree of depth that did not have is at 0.01 μ m-30 μ m, 180 degrees centigrade-360 degrees centigrade of drying glue temperature, 30 seconds-300 seconds drying glue time, solidify photoresist 12 and minute surface 1 structure, photoresist 19 and minute surface 1 that the CMP polishing is solidified, obtain smooth even curface, minute surface 1 polishing stock removal 0.01 μ m-20 μ m.
The below is with stroke chamber 8 dark 20 μ m, and stroke chamber 8 bottom sizes are the rectangle of 300 μ m * 500 μ m, and the electrostatic drive MEMS distorting lens of a kind of large stroke structure of anchor point 3 high 2.5 μ m is example, by reference to the accompanying drawings the present invention is described specifically.
Select the silicon chip of twin polishing, thickness 380 μ m as the silicon base 4 of the electrostatic drive MEMS distorting lens of large stroke structure, shown in Fig. 2 A figure;
The golden film that evaporation 500nm is thick on silicon base 4 is as mask layer 11, shown in Fig. 2 B figure;
Resist coating 12 on mask layer 11, and the thickness 2 μ m of photoresist 12 are shown in Fig. 2 C figure;
Photoetching is developed, and starts the glue etching window 13 in journey chamber at photoresist 12, shown in Fig. 2 D figure;
Use golden corrosive liquid, the mask layer 11 that the wet etching gold forms is started the mask layer etching window 14 in journey chamber at mask layer 11, shown in Fig. 2 E;
Except photoresist layer 12, and with KOH corrosive liquid etch silicon substrate 4, obtain stroke chamber 8, the dark 20 μ m in stroke chamber are shown in Fig. 2 F;
Remove mask layer 11 with golden corrosive liquid, get through hole 15 in 8 bottoms, stroke chamber, bore dia 200 μ m, process means adopts ICP, shown in Fig. 2 G figure;
In silicon base 4, grown silicon nitride layer on the surface of stroke chamber 8 and through hole 15, thickness 400nm, as insulation course 5, process means adopts magnetron sputtering and LPCVD, shown in Fig. 2 H figure;
Adopt electroplating technology, make bottom electrode 7 and guide wire 6 in 8 bottoms, stroke chamber, shown in Fig. 2 I figure;
Conformal deposit photoresist 12, thickness 4 μ m, photoetching, the anchor point plating seed layer 16 of sputter anchor point 3 after developing, thick 500nm is shown in Fig. 2 J;
Adopt lift-off technique, remove photoresist 12, remove unnecessary useless metal 17, obtain the anchor point plating seed layer 16 of anchor point 3, shown in Fig. 2 K figure.
Resist coating 12, photoetching is developed and is opened the plating window 18 of anchor point 3, and the thick 3.5 μ m of glue obtain the electroplated structural shown in Fig. 2 L figure.
Electroplate anchor point 3, the control electroplating thickness obtains the structure shown in Fig. 2 M figure between 2.5 μ m;
Wash photoresist 12 off, obtain the structure shown in Fig. 2 N;
Resist coating 12, glue-line did not have anchor point 3, and thick 4 μ m-5 μ m obtain the structure shown in Fig. 2 O;
Hot setting photoresist 12 forms the photoresist 19 that solidifies, and 245 degrees centigrade of temperature, obtain the structure shown in Fig. 2 P at 90 seconds drying glue time;
The photoresist 19 that CMP polishing is solidified obtains smooth curing photoresist 19, and the end face that guarantees anchor point 3 during polishing exposes the photoresist 19 of curing and polished smooth, and the THICKNESS CONTROL of jettisoning anchor point 3 is about 0.5 μ m, shown in Fig. 2 Q during polishing;
Glue face at the curing photoresist 19 that polishes gets rid of photoresist 12, the thick 2 μ m of glue, and photoetching is developed, the beam plating seed layer 20 of sputter beam 2 and the top electrode plating seed layer 21 of top electrode 9, seed bed thickness 0.5 μ m, resulting structures is shown in Fig. 2 R;
Ultrasonic washing washed photoresist 12 off, and the unnecessary metal-layer structure 17 that produces when utilizing lift-off technique to remove the sputtering seed layer obtains the plating seed layer 21 of beam plating seed layer 20 and top electrode, shown in Fig. 2 S;
Resist coating 12 again, the thick 3 μ m of glue, and photoetching is opened top electrode 9 and top electrode and is electroplated window 22 and electroplate window 23 with the beam of beam 2, shown in Fig. 2 T after the development;
Electroplate the structure of beam 2 and top electrode 9, during plating, electroplating thickness 2 μ m obtain the structure shown in Fig. 2 U;
Wash photoresist after the plating off, and again get rid of photoresist 12, bondline thickness 4 μ m obtain the structure shown in Fig. 2 V;
The support column plating seed layer 24 of photoetching, development, sputter support column 10, the seed bed thickness is μ m O.5, obtains the structure shown in Fig. 2 W;
Wash the photoresist behind the sputtering seed layer off, utilize lift-off technique to remove unnecessary metal construction 17, recoat photoresist 12, the thickness of photoresist is 5.5 μ m, behind the photoetching development, electroplates the post 10 that is supported, the height of plated support post 10 is 2 μ m, shown in Fig. 2 X;
Hot setting photoresist 12, the photoresist 19 that obtains solidifying, the photoresist 19 after the flat curing of CMP throwing and the end face of support column 10, support column 10 grinding thickness 0.5 μ m makes smooth smooth the coming out of end face of support column 10, shown in Fig. 2 Y;
In Fig. 1 on the structure shown in the Y figure on resist coating 12, the thick 2 μ m of glue, photoetching is developed and the minute surface plating seed layer 25 of sputter minute surface 1, Seed Layer 0.5 μ m is shown in Fig. 2 Z figure;
Remove photoresist 12, utilize lift-off technique to remove unnecessary metal construction 17, resist coating 12 again, the thick 3 μ m of glue, and photoetching is developed and plating minute surface 1 structure, electroplating thickness 2 μ m, resulting structures is shown in Fig. 2 AA;
Wash the photoresist 12 after the plating off, recoat photoresist 12, photoresist 12 did not have minute surface 1, and thickness 4 μ m are shown in Fig. 2 BB;
Hot setting photoresist 12, CMP are thrown flat photoresist 19 and the minute surface 1 that solidifies, and make smooth smooth the coming out of minute surface, the mirror grinding degree of depth 0.5 μ m, and resulting structures is shown in Fig. 2 CC;
The sacrifice layer that the photoresist 19 that dry release solidifies serves as, the electrostatic drive MEMS distorting lens that obtains large stroke structure is quiet, shown in Fig. 2 DD.
The above; only be the embodiment among the present invention, but protection scope of the present invention is not limited to this, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; conversion or the replacement expected can be understood, all of the present invention comprising within the scope should be encompassed in.
Claims (4)
1. the method for making of the electrostatic drive MEMS distorting lens of a large stroke structure, it is characterized in that: the step of described method for making is as follows:
Steps A is to step e: plate mask layer in silicon base; Resist coating on mask layer, and through forming the corrosion window in stroke chamber after photoetching, the development;
Step F: etch mask layer, etch silicon substrate form the stroke chamber;
Step G: at bottom, stroke chamber dry plasma etch technique etching through hole;
Step H: remove mask layer and photoresist, and depositing insulating layer;
Step I: at the bottom in stroke chamber processing bottom electrode and guide wire;
Step J: the spraying photoresist obtains making the window of anchor point, and deposits the anchor point plating seed layer after the photoetching;
Step K: wash photoresist off, obtain having the structure of anchor point plating seed layer;
Step L: resist coating, and obtain anchor point after the photoetching, development and electroplate window;
Step M: electroplate anchor point, the control electroplating thickness does not exceed the thickness of photoresist;
Step N: after electroplating anchor point, remove photoresist;
Step O: recoat photoresist, bondline thickness did not have anchor point;
Step P: solidify photoresist, the photoresist that obtains solidifying;
Photoresist and anchor point structure are solidified in step Q:CMP polishing, polishing guarantees to obtain to be exposed to outer, the smooth smooth anchor point of end face;
Step R: whirl coating on the curing photoresist of polishing, photoetching, development and sputter beam plating seed layer and top electrode plating seed layer;
Step S: wash photoresist off, utilize lift-off technique to remove unnecessary metal construction, obtain beam plating seed layer and top electrode plating seed layer structure;
Step T: again after resist coating, the photoetching, open the plating window of top electrode and the plating window of beam;
Step U: electroplate beam and top electrode;
Step V: wash photoresist after the plating off, and again get rid of photoresist;
Step W: the support column plating seed layer of photoetching, development, sputter support column;
Step X: wash photoresist off, utilize lift-off technique to remove unnecessary metal construction, recoat photoresist, behind the photoetching development, electroplate the post that is supported, the height thickness of control plated support post is lower than the height of photoresist;
Step Y: solidify photoresist, the photoresist after the flat curing of CMP throwing and the end face of support column;
Step Z: the plating seed layer of resist coating, photoetching, development and sputter minute surface on the structure of step 2Y;
Steps A A: remove photoresist, utilize lift-off technique to remove unnecessary metal construction, again resist coating, photoetching and electroplate mirror surface structure;
Step BB: wash the photoresist after the plating off, recoat photoresist, the thickness of photoresist did not have minute surface;
Step CC: hot setting photoresist, CMP are thrown flat photoresist and the minute surface that solidifies;
Step DD: the photoresist that dry release solidifies, obtain the electrostatic drive MEMS distorting lens of large stroke structure, the photoresist that adopts dry release to solidify can each the interstructural adhesion of effectively preventing distorting lens.
2. the method for making of the electrostatic drive MEMS distorting lens of large stroke structure as claimed in claim 1, it is characterized in that: after electroplating the formation anchor point, recoat photoresist, the photoresist glue-line did not have the anchor point structure, and the degree of depth that did not have is at 0.01 μ m-30 μ m, 180 degrees centigrade-360 degrees centigrade of drying glue temperature, 30 seconds-300 seconds drying glue time, solidify photoresist and anchor point structure, with photoresist and the anchor point of CMP chemical polishing curing, obtain smooth even curface, the polishing stock removal 0.01 μ m-20 μ m of anchor point.
3. the method for making of the electrostatic drive MEMS distorting lens of large stroke structure as claimed in claim 1, it is characterized in that: after obtaining the plated support rod structure, 180 degrees centigrade-360 degrees centigrade of drying glue temperature, 30 seconds-300 seconds drying glue time, solidify photoresist and support column arrangement, photoresist and support column that the CMP chemical polishing is solidified obtain smooth even curface, the polishing stock removal 0.01 μ m-20 μ m of grinding and polishing support column.
4. require the method for making of the electrostatic drive MEMS distorting lens of large stroke structure as described in sharp 1 such as power, it is characterized in that: recoat photoresist after electroplating mirror surface structure, the photoresist glue-line did not have mirror surface structure, do not have the degree of depth at 0.01 μ m-30 μ m, 180 degrees centigrade-360 degrees centigrade of drying glue temperature, 30 seconds-300 seconds drying glue time, solidify photoresist and mirror surface structure, photoresist and minute surface that the CMP polishing is solidified obtain smooth even curface, mirror polish stock removal 0.01 μ m-20 μ m.
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| CN104296675B (en) * | 2014-11-12 | 2017-08-25 | 核工业理化工程研究院 | The detection light path of optical thin film element thermal deformation |
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| CN102981271B (en) | 2015-05-13 |
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