CN101475136A - Manufacturing method of electrostatic repulsion force driven MEMS deformable mirror - Google Patents
Manufacturing method of electrostatic repulsion force driven MEMS deformable mirror Download PDFInfo
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- CN101475136A CN101475136A CNA2009100761618A CN200910076161A CN101475136A CN 101475136 A CN101475136 A CN 101475136A CN A2009100761618 A CNA2009100761618 A CN A2009100761618A CN 200910076161 A CN200910076161 A CN 200910076161A CN 101475136 A CN101475136 A CN 101475136A
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- etching
- silicon
- polysilicon
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- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 24
- 238000001312 dry etching Methods 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 238000001039 wet etching Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 53
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 27
- 239000000377 silicon dioxide Substances 0.000 claims description 26
- 239000011521 glass Substances 0.000 claims description 25
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 24
- 238000002360 preparation method Methods 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 3
- 230000004075 alteration Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000003068 static effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- Mechanical Light Control Or Optical Switches (AREA)
Abstract
The invention discloses a method for manufacturing an electrostatic repulsive force driven MEMS deformable mirror, which mainly comprises the processes of multilayer film deposition, dry etching, wet etching and the like on a silicon substrate, and is characterized in that: two layers of silicon nitride films and a bottom surface etching process are introduced. The manufacturing process of the MEMS deformable mirror driven by the electrostatic repulsive force can eliminate the electrostatic pull-in phenomenon, increase the optical aberration correction capability of the MEMS deformable mirror, avoid the diffraction loss caused by the mirror surface release hole and greatly improve the filling factor and the light reflection efficiency of the mirror surface of the MEMS deformable mirror.
Description
Technical field
The present invention relates to the MOEMS technical field, particularly a kind of preparation method that is applicable to the electrostatic repulsion force driven MEMS distorting lens of ADAPTIVE OPTICS SYSTEMS.
Background technology
In the distorting lens field, static driven MEMS distorting lens has that response speed is fast, energy consumption is low, volume is little, the cell density advantages of higher, and becomes the most potential a kind of micro deformable mirror.Traditional electrostatic attraction type MEMS distorting lens is because exist static to draw in (pull-in) phenomenon, and its stroke can not surpass 1/3rd of upper/lower electrode primary clearance.By adopting electrostatic repulsion forces to drive, can eliminate static pull-in phenomenon, thereby improve the stroke of distorting lens.Yet, it all is to adopt the surface treatment that only contains one deck silicon nitride to be made that existing electrostatic repulsion forces drives the MEMS distorting lens, in manufacturing process, the release of structure sheaf all is to realize by the minute surface release aperture, such technology not only can not be made continuous surface type MEMS Coulomb repulsion type distorting lens, and understand the fill factor, curve factor that reduce minute surface because of the introducing of release aperture, and cause very big diffraction loss, the range of application of distorting lens is restricted.
Summary of the invention
The technical problem to be solved in the present invention is: at the deficiencies in the prior art, provide a kind of method that adopts the surface treatment of two-layer silicon nitride and discharge making electrostatic repulsion forces driving MEMS distorting lens from the bottom surface.This method not only can be made continuous surface type MEMS Coulomb repulsion type distorting lens, and the minute surface fill factor, curve factor of distorting lens brought up near 100%, thereby avoided the diffraction loss that causes because of the minute surface release aperture, improved the specular light reflections rate and the efficiency of light energy utilization greatly.
The technical solution adopted for the present invention to solve the technical problems is: a kind of preparation method of electrostatic repulsion force driven MEMS distorting lens, introduce two-layer silicon nitride and bottom surface etching technics, and be made by following technological process:
(1) deposit thickness is the ground floor silicon nitride film of 0.1～1 μ m on silicon base, as following insulating barrier;
(2) deposit thickness is ground floor polysilicon or the non-crystalline silicon of 0.5～1.5 μ m, etching ground floor polysilicon or non-crystalline silicon then, and etching depth equals the thickness of ground floor polysilicon or non-crystalline silicon, forms the bottom electrode of distorting lens;
(3) deposit thickness is ground floor silica or the phosphorosilicate glass of 1～5 μ m, etching silicon dioxide or phosphorosilicate glass then, and etching depth equals the thickness of ground floor silica or phosphorosilicate glass, forms the support anchor point of distorting lens top electrode;
(4) deposit thickness is second layer polysilicon or the non-crystalline silicon of 1～3 μ m, etch polysilicon or non-crystalline silicon then, and etching depth equals the thickness of second layer polysilicon or non-crystalline silicon, forms the top electrode and the release aperture of distorting lens;
(5) deposit thickness is second layer silica or the phosphorosilicate glass of 0.5～3 μ m, and etching silicon dioxide or phosphorosilicate glass, etching depth equal the thickness of second layer silica or phosphorosilicate glass, forms the support anchor point of second layer silicon nitride and minute surface;
(6) deposit thickness is the second layer silicon nitride film of 0.2～1 μ m, as last insulating barrier;
(7) deposit thickness is the 3rd layer of polysilicon or the non-crystalline silicon of 1～5 μ m, as the mirror surface structure layer;
(8) bottom surface wet etching base silicon is carved into ground floor silicon nitride bottom surface always;
(9) bottom surface dry etching ground floor silicon nitride is carved into ground floor silica or phosphorosilicate glass bottom surface always, forms the bottom surface release aperture;
(10) entire device being put into concentration is 50%～70%, and temperature is in 25 ℃～30 ℃ the HF solution 10～30 minutes, carries out the wet etching of silica or phosphorosilicate glass, with the releasing structure layer;
(11) metallic film that device upper surface sputter one deck 0.1～0.5 μ m after oven dry is thick is as increasing anti-film, and metallic film can be gold, aluminium or titanium platinum.
The advantage that the present invention is compared with prior art had: the present invention introduces two-layer silicon nitride and bottom surface etching technics by adopting, make corrosive liquid from bottom surface wet etching sacrifice layer with the releasing structure layer, avoided so directly releasing the caused diffraction loss of discharge hole, improved minute surface fill factor, curve factor and light reflectivity greatly at minute surface.
Description of drawings
The structure chart of Fig. 1 behind deposition ground floor silicon nitride on the silicon base;
Fig. 2 on the ground floor silicon nitride, deposit and dry etching ground floor polysilicon after structure chart;
The structure chart of Fig. 3 after dry etching on the ground floor silica forms anchor point;
Fig. 4 deposits the structure chart behind second layer polysilicon and the dry etching formation top electrode;
Fig. 5 deposits the structure chart after second layer silica and dry etching go out to support anchor point;
Fig. 6 deposits the structure chart behind the second layer silicon nitride;
Fig. 7 deposits the 3rd layer of structure chart behind the polysilicon;
Fig. 8 forms the bottom view after the release aperture;
The single distorting lens structural representation that Fig. 9 is final;
Among the figure: 1 is silicon base, 2 is the ground floor silicon nitride, and 3 is ground floor polysilicon or non-crystalline silicon, and 4 is ground floor silica or phosphorosilicate glass, 5 are top electrode support anchor point, 6 is second layer polysilicon or non-crystalline silicon, and 7 is second layer silica or phosphorosilicate glass, and 8 is the support anchor point of second layer silicon nitride and minute surface thereof, 9 is second layer silicon nitride, 10 is the 3rd layer of polysilicon or non-crystalline silicon, and 11 is the release aperture on the silicon base, and 12 is metallic film.
The specific embodiment
Be example with the preparation method that adopts the power-actuated single MEMS distorting lens of Coulomb repulsion below, introduce the present invention in conjunction with the accompanying drawings in detail.
The preparation method of the electrostatic repulsion force driven MEMS distorting lens of present embodiment, its concrete steps are as follows:
(1) at first deposit thickness on the silicon base 1 be 0.6 μ m ground floor silicon nitride 2 as under insulating barrier, as shown in Figure 1;
(2) then, continue deposit thickness and be the ground floor polysilicon of 0.5 μ m or non-crystalline silicon 3 and it is carried out dry etching, etching depth equals the thickness of ground floor polysilicon or non-crystalline silicon 3, forms the bottom electrode of distorting lens, as shown in Figure 2;
(3) more thereon deposit thickness be the ground floor silica of 2 μ m or phosphorosilicate glass 4 and it carried out dry etching that form the support anchor point 5 of top electrode, etching depth equals the thickness of ground floor silica or phosphorosilicate glass 4, as shown in Figure 3;
(4) then, continue deposit thickness and be the second layer polysilicon of 2 μ m or non-crystalline silicon 6 and it is carried out dry etching, form the top electrode and the release aperture of distorting lens, etching depth equals the thickness of second layer polysilicon or non-crystalline silicon 6, as shown in Figure 4;
(5) the above-mentioned steps resulting structures and above the release aperture continuation deposit thickness be the second layer silica of 1 μ m or phosphorosilicate glass 7 and it carried out dry etching, etching depth equals the thickness of second layer silica or phosphorosilicate glass 7, form the support anchor point 8 of second layer silicon nitride, as shown in Figure 5;
(6) then, deposit thickness is the second layer silicon nitride 9 of 0.2 μ m, and it is carried out dry etching to form insulating barrier, and etching depth equals the thickness of second layer silicon nitride 9, as shown in Figure 6;
(7) continue the 3rd layer of thick polysilicon of deposition 2 μ m or non-crystalline silicon 10, and it is carried out dry etching to form the structure sheaf of distorting lens minute surface, etching depth equals the thickness of the 3rd layer of polysilicon or non-crystalline silicon 10, as shown in Figure 7;
(8) carry out wet etching from silicon base 1 bottom surface, be carved into ground floor silicon nitride 2 always; Then, carry out dry etching, be carved into the bottom surface of ground floor silica or phosphorosilicate glass 3 always, form bottom surface release aperture 11, as shown in Figure 8 from the bottom surface to ground floor silicon nitride 2;
(9) then entire device being put into concentration is 50%～70%, and temperature is in 25 ℃～30 ℃ the HF solution 10～30 minutes, carries out the wet etching of ground floor silica or phosphorosilicate glass 4 and second layer silica or phosphorosilicate glass 7, with the releasing structure layer;
(10) at last with the device oven dry after the structure sheaf release, and at the thick golden film 12 of surface sputtering one deck 0.2 μ m of its superiors' polysilicon or non-crystalline silicon 10, to increase the reflectivity of distorting lens minute surface, final single distorting lens structure as shown in Figure 9.
Above preparation method is suitable for the making of continuous surface type electrostatic repulsion force driven MEMS distorting lens equally, just the structural representation difference.
Claims (2)
1. the preparation method of an electrostatic repulsion force driven MEMS distorting lens is characterized in that introducing two-layer silicon nitride film and bottom surface etching technics, is made by following technological process:
(1) deposit thickness is the ground floor silicon nitride film of 0.1～1 μ m on silicon base, as following insulating barrier;
(2) deposit thickness is ground floor polysilicon or the non-crystalline silicon of 0.5～1.5 μ m, etching ground floor polysilicon or non-crystalline silicon then, and etching depth equals the thickness of ground floor polysilicon or non-crystalline silicon, forms the bottom electrode of distorting lens;
(3) deposit thickness is ground floor silica or the phosphorosilicate glass of 1～5 μ m, etching silicon dioxide or phosphorosilicate glass then, and etching depth equals the thickness of ground floor silica or phosphorosilicate glass, forms the support anchor point of distorting lens top electrode;
(4) deposit thickness is second layer polysilicon or the non-crystalline silicon of 1～3 μ m, etch polysilicon or non-crystalline silicon then, and etching depth equals the thickness of second layer polysilicon or non-crystalline silicon, forms the top electrode and the release aperture of distorting lens;
(5) deposit thickness is second layer silica or the phosphorosilicate glass of 0.5～3 μ m, and etching silicon dioxide or phosphorosilicate glass, etching depth equal the thickness of second layer silica or phosphorosilicate glass, forms the support anchor point of second layer silicon nitride and minute surface;
(6) deposit thickness is the second layer silicon nitride film of 0.2～1 μ m, as last insulating barrier;
(7) deposit thickness is 1～5 μ m the 3rd layer of polysilicon or non-crystalline silicon;
(8) bottom surface wet etching base silicon is carved into the ground floor silicon nitride always;
(9) bottom surface dry etching ground floor silicon nitride is carved into ground floor silica or phosphorosilicate glass bottom surface always;
(10) entire device being put into concentration is 50%～70%, and temperature is in 25 ℃～30 ℃ the HF solution 10～30 minutes, carries out the wet etching of silica or phosphorosilicate glass, with the releasing structure layer;
(11) the thick metallic film of device upper surface sputter one deck 0.1～0.5 μ m after oven dry.
2. the preparation method of a kind of electrostatic repulsion force driven MEMS distorting lens according to claim 1 is characterized in that: the metallic film in the described step (11) can be gold, aluminium or titanium platinum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2009100761618A CN101475136B (en) | 2009-01-09 | 2009-01-09 | Manufacturing method of electrostatic repulsion force driven MEMS deformable mirror |
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| CN2009100761618A CN101475136B (en) | 2009-01-09 | 2009-01-09 | Manufacturing method of electrostatic repulsion force driven MEMS deformable mirror |
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| CN101475136A true CN101475136A (en) | 2009-07-08 |
| CN101475136B CN101475136B (en) | 2011-06-29 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102253486A (en) * | 2011-08-05 | 2011-11-23 | 中国科学院光电技术研究所 | Two-dimensional MEMS tilting mirror with freely changeable deflection axis |
| CN102981271A (en) * | 2012-11-16 | 2013-03-20 | 中国科学院光电技术研究所 | Manufacturing method of electrostatic driving MEMS deformable mirror with large-stroke structure |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5083857A (en) * | 1990-06-29 | 1992-01-28 | Texas Instruments Incorporated | Multi-level deformable mirror device |
| US5567334A (en) * | 1995-02-27 | 1996-10-22 | Texas Instruments Incorporated | Method for creating a digital micromirror device using an aluminum hard mask |
| CN100410722C (en) * | 2003-06-02 | 2008-08-13 | 明锐有限公司 | Manufacture of high fill ratio reflective spatial light modulator with hidden hinge |
| CN101236300A (en) * | 2008-03-03 | 2008-08-06 | 中国科学院光电技术研究所 | MEMS deformable mirror driven by electrostatic repulsive force |
| CN101256283B (en) * | 2008-04-07 | 2010-06-16 | 中国科学院光电技术研究所 | Electrostatic drive MEMS deformable mirror based on SOI wafer |
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2009
- 2009-01-09 CN CN2009100761618A patent/CN101475136B/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102253486A (en) * | 2011-08-05 | 2011-11-23 | 中国科学院光电技术研究所 | Two-dimensional MEMS tilting mirror with freely changeable deflection axis |
| CN102253486B (en) * | 2011-08-05 | 2013-07-10 | 中国科学院光电技术研究所 | Two-dimensional MEMS tilting mirror with freely changeable deflection axis |
| CN102981271A (en) * | 2012-11-16 | 2013-03-20 | 中国科学院光电技术研究所 | Manufacturing method of electrostatic driving MEMS deformable mirror with large-stroke structure |
| CN102981271B (en) * | 2012-11-16 | 2015-05-13 | 中国科学院光电技术研究所 | Manufacturing method of electrostatic driving MEMS deformable mirror with large-stroke structure |
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| CN101475136B (en) | 2011-06-29 |
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