CN102969356A - 一种超结功率器件终端结构 - Google Patents
一种超结功率器件终端结构 Download PDFInfo
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103996702A (zh) * | 2014-05-26 | 2014-08-20 | 电子科技大学 | 一种提高超结功率器件雪崩耐量的终端结构 |
WO2016173394A1 (zh) * | 2015-04-30 | 2016-11-03 | 苏州东微半导体有限公司 | 一种半导体超级结功率器件及其制造方法 |
CN109564932A (zh) * | 2016-08-08 | 2019-04-02 | 三菱电机株式会社 | 半导体装置 |
CN111370494A (zh) * | 2018-12-26 | 2020-07-03 | 深圳尚阳通科技有限公司 | 超结器件 |
CN113488529A (zh) * | 2021-07-13 | 2021-10-08 | 电子科技大学 | 一种基于多级场板的超结终端结构 |
CN114429984A (zh) * | 2022-04-07 | 2022-05-03 | 江苏长晶浦联功率半导体有限公司 | 一种超结终端结构 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1124408A (zh) * | 1994-07-20 | 1996-06-12 | 电子科技大学 | 一种用于半导体器件的表面耐压区 |
US20040124465A1 (en) * | 2000-02-09 | 2004-07-01 | Fuji Electric Co., Ltd. | Super-junction semiconductor device and method of manufacturing the same |
CN1744329A (zh) * | 2004-08-31 | 2006-03-08 | 株式会社电装 | 具有超结结构的半导体器件及其制造方法 |
CN101840933A (zh) * | 2010-04-13 | 2010-09-22 | 苏州博创集成电路设计有限公司 | 带表面缓冲环终端结构的超结金属氧化物场效应晶体管 |
CN101969073A (zh) * | 2010-08-27 | 2011-02-09 | 东南大学 | 快速超结纵向双扩散金属氧化物半导体管 |
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- 2012-11-08 CN CN201210443873.0A patent/CN102969356B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1124408A (zh) * | 1994-07-20 | 1996-06-12 | 电子科技大学 | 一种用于半导体器件的表面耐压区 |
US20040124465A1 (en) * | 2000-02-09 | 2004-07-01 | Fuji Electric Co., Ltd. | Super-junction semiconductor device and method of manufacturing the same |
CN1744329A (zh) * | 2004-08-31 | 2006-03-08 | 株式会社电装 | 具有超结结构的半导体器件及其制造方法 |
CN101840933A (zh) * | 2010-04-13 | 2010-09-22 | 苏州博创集成电路设计有限公司 | 带表面缓冲环终端结构的超结金属氧化物场效应晶体管 |
CN101969073A (zh) * | 2010-08-27 | 2011-02-09 | 东南大学 | 快速超结纵向双扩散金属氧化物半导体管 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103996702A (zh) * | 2014-05-26 | 2014-08-20 | 电子科技大学 | 一种提高超结功率器件雪崩耐量的终端结构 |
CN103996702B (zh) * | 2014-05-26 | 2017-03-01 | 电子科技大学 | 一种提高超结功率器件雪崩耐量的终端结构 |
WO2016173394A1 (zh) * | 2015-04-30 | 2016-11-03 | 苏州东微半导体有限公司 | 一种半导体超级结功率器件及其制造方法 |
US10411116B2 (en) | 2015-04-30 | 2019-09-10 | Suzhou Oriental Semiconductor Co., Ltd. | Semiconductor super-junction power device and manufacturing method therefor |
CN109564932A (zh) * | 2016-08-08 | 2019-04-02 | 三菱电机株式会社 | 半导体装置 |
CN111370494A (zh) * | 2018-12-26 | 2020-07-03 | 深圳尚阳通科技有限公司 | 超结器件 |
CN113488529A (zh) * | 2021-07-13 | 2021-10-08 | 电子科技大学 | 一种基于多级场板的超结终端结构 |
CN114429984A (zh) * | 2022-04-07 | 2022-05-03 | 江苏长晶浦联功率半导体有限公司 | 一种超结终端结构 |
CN114429984B (zh) * | 2022-04-07 | 2022-07-01 | 江苏长晶浦联功率半导体有限公司 | 一种超结终端结构 |
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